JPH055536Y2 - - Google Patents
Info
- Publication number
- JPH055536Y2 JPH055536Y2 JP10088686U JP10088686U JPH055536Y2 JP H055536 Y2 JPH055536 Y2 JP H055536Y2 JP 10088686 U JP10088686 U JP 10088686U JP 10088686 U JP10088686 U JP 10088686U JP H055536 Y2 JPH055536 Y2 JP H055536Y2
- Authority
- JP
- Japan
- Prior art keywords
- clip
- electrode
- substrate
- sealing
- ecd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 57
- 238000007789 sealing Methods 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000605 extraction Methods 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 206010063836 Atrioventricular septal defect Diseases 0.000 description 43
- 238000001211 electron capture detection Methods 0.000 description 43
- 238000004040 coloring Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 239000012634 fragment Substances 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- -1 hydroxy ions Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は、エレクトロクロミツク素子の改良に
関する。以下、エレクトロクロミツクを「EC」
と略称し、EC素子を「ECD」と略称する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to improvements in electrochromic devices. Hereinafter, Electrochromic is referred to as "EC"
The EC element is abbreviated as "ECD".
電圧を印加すると可逆的に電解酸化または還元
反応が起こり可逆的に着色する現象をエレクトロ
クロミズムと言う。このような現象を示すエレク
トロクロミツク(以下、ECと略称する)物質を
用いて、電圧操作により着消色するEC素子(以
下、ECDと略す)を作り、このECDを光量制御
素子(例えば、防眩ミラー)や7セグメントを利
用した数字表示素子に利用しようとする試みは、
20年以上前から行われている。例えば、ガラス基
板の上に透明電極層、三酸化タングステン薄膜と
二酸化ケイ素のような絶縁膜との2層膜(順は不
同)及び対向電極層を順次積層してなるECD(特
公昭52−46098参照)が全固体型ECDとして知ら
れている。このECDに電圧を印加すると三酸化
タングステン(WO3)薄膜が青色に着色する。
その後、このECDに逆の電圧を印加すると、
WO3薄膜の青色が消えて無色になる。この着
色・消色する機構は詳しくは解明されていない
が、WO3薄膜および絶縁膜(イオン導電層)中
に含まれる少量の水分がWO3の着色・消色を支
配していると理解されている。着色の反応式は下
記のように推定されている。
Electrochromism is a phenomenon in which electrolytic oxidation or reduction reactions occur reversibly when a voltage is applied, resulting in reversible coloring. Using an electrochromic (hereinafter abbreviated as EC) material that exhibits such a phenomenon, we create an EC element (hereinafter abbreviated as ECD) that can be colored and decolored by voltage manipulation, and then use this ECD as a light amount control element (for example, Attempts to use it for anti-glare mirrors) and numeric display elements using 7 segments have been made.
It's been going on for over 20 years. For example, an ECD (Japanese Patent Publication No. 52-46098 ) is known as an all-solid-state ECD. When voltage is applied to this ECD, the tungsten trioxide (WO 3 ) thin film is colored blue.
Then, when we apply a reverse voltage to this ECD,
The blue color of the WO 3 thin film disappears and becomes colorless. Although the mechanism of coloring and decoloring has not been elucidated in detail, it is understood that a small amount of water contained in the WO 3 thin film and the insulating film (ion conductive layer) controls the coloring and decolorization of WO 3 . ing. The coloring reaction formula is estimated as follows.
陰極側:
H2O→H++OH-
WO3+nH++ne-→HoWO3
(無色透明) (青色)
陽極側:
OH-→1/2H2O+1/4O2↑+1/2e-
ところで、EC層を直接又は間接的に挟む一対
の電極層は、EC層の着消色を外部に見せるため
に少なくとも一方は透明でなければならない。特
に透過型のECDの場合には両方とも透明でなけ
ればならない。透明な電極材料としては、現在の
ところSnO2,In2O3,ITO(SnO2とIn2O3との混
合物)、ZnOなどが知られているが、これらの材
料は比較的透明度が悪いために薄くせねばなら
ず、この理由及びその他の理由からECDは基板
例えばガラス板やプラスチツク板の上に形成する
のが普通であり、このようなECDの構造の一例
を第4図に示す。Cathode side: H 2 O→H + +OH - WO 3 +nH + +ne - →H o WO 3 (colorless and transparent) (blue) Anode side: OH - →1/2H 2 O+1/4O 2 ↑+1/2e -By the way, At least one of the pair of electrode layers that directly or indirectly sandwich the EC layer must be transparent in order to show the coloring and fading of the EC layer to the outside. Especially in the case of a transmissive ECD, both must be transparent. Currently known transparent electrode materials include SnO 2 , In 2 O 3 , ITO (a mixture of SnO 2 and In 2 O 3 ), and ZnO, but these materials have relatively poor transparency. For this and other reasons, ECDs are typically formed on a substrate, such as a glass plate or a plastic plate, and an example of the structure of such an ECD is shown in FIG.
第4図に於いて、Aは上部電極Al、Bは下部
透明電極、Eは還元着色性EC層(例えばWO3)、
Dはイオン導電層、Cは可逆的電解酸化層又は酸
化着色性EC層(例えば酸化又は水酸化イリジウ
ム)をそれぞれ示し、基本的にはこのA〜Bの積
層構造だけでECDが構成されるが、前述のとお
り、これらのECDは基板S上に形成される。 In FIG. 4, A is the upper electrode Al, B is the lower transparent electrode, E is the reduction coloring EC layer (for example, WO 3 ),
D represents an ion conductive layer, and C represents a reversible electrolytic oxidation layer or an oxidative coloring EC layer (e.g. iridium oxide or hydroxide), and basically an ECD is composed of only the laminated structure of A to B. , these ECDs are formed on the substrate S, as described above.
RはECDの封止材例えばエポキシ樹脂であり、
Gは保護用の封止基板である。 R is an ECD sealing material such as epoxy resin;
G is a protective sealing substrate.
このようなECDの電極A,Bに外部電源を供
給するために、各々、取出し部が必要であり、取
出し部の少なくとも一部は封止基板によつて封止
されることなく露出しており、この露出した取出
し部に外部配線LA,LBが例えばハンダ付けによ
り接続されていた。 In order to supply external power to electrodes A and B of such an ECD, a lead-out part is required for each, and at least a part of the lead-out part is exposed without being sealed by the sealing substrate. External wiring L A and L B were connected to this exposed lead-out portion by, for example, soldering.
従来、取出し部は、上部電極及び下部電極と同
種の材料及び製法で形成され、そのため真空蒸
着、イオンプレーテイング、スパツタリングなど
の真空薄膜形成技術により形成された(イ)ITOその
他の酸化物薄膜、又は(ロ)Alその他の金属薄膜が
使用されていた。 Conventionally, the extraction part was formed using the same material and manufacturing method as the upper and lower electrodes, and therefore (a) ITO and other oxide thin films formed by vacuum thin film forming techniques such as vacuum evaporation, ion plating, and sputtering. Or (b) Al or other metal thin film was used.
しかしながら、(イ)、(ロ)いずれの場合にも取出し
部が非常に薄いので、ハンダ付けの作業効率が悪
いという問題点があるほか、(イ)の場合には、特に
電気抵抗が比較的高いので、外部配線を直接ハン
ダ付けすると、抵抗の低い外部配線と抵抗の高い
取出し部とが一点において接触しているため、外
部配線から取出し部を通じて電極全体に供給され
る電荷の供給速度が遅くなり、応答性が悪いとか
着色・消色ムラが生じるという問題点があり、更
に温水浸漬試験に供すると、外部配線が取出し部
から剥離するという問題点があつた。(ロ)の場合に
は、温水浸漬試験に供すると、取出し部が基板か
ら剥離するという問題点があつた。 However, in both cases (a) and (b), the extraction part is very thin, so there is a problem that the soldering work efficiency is low, and in the case of (a), the electrical resistance is relatively low. If you solder the external wiring directly, the low-resistance external wiring and the high-resistance lead-out part are in contact at one point, so the supply speed of charge from the external wiring to the entire electrode through the lead-out part is slow. However, there were problems such as poor responsiveness and uneven coloring and decoloring, and furthermore, when subjected to a hot water immersion test, the external wiring peeled off from the lead-out part. In the case of (b), there was a problem in that the take-out portion peeled off from the substrate when subjected to a hot water immersion test.
本考案者らの一部は、先にこれらの問題点を解
決ずべく研究した結果、取出し部に低抵抗の導電
性クリツプを取り付け、これに外部配線を接続す
ることを発明し、昭和61年5月20日付けで特許出
願した。この出願は、現時点でまだ公開されてお
らず、以下、先願という。 Some of the inventors of this invention first conducted research to solve these problems, and in 1988 they invented a method of attaching a low-resistance conductive clip to the extraction part and connecting external wiring to this. A patent application was filed on May 20th. This application has not been published yet and is hereinafter referred to as the prior application.
クリツプを使用すると、温水浸漬試験に供して
も剥離を生ぜず、しかも外部配線から取出し部を
通じて高抵抗電極全体に供給される電荷の供給速
度が速く、そのため応答性がよく、着色・消色ム
ラの生じないECDが得られる。 When a clip is used, it does not peel off even when subjected to a hot water immersion test, and the supply speed of charge from the external wiring to the entire high-resistance electrode through the lead-out part is fast, resulting in good response and no uneven coloring or decoloring. ECD that does not occur can be obtained.
しかしながら、先願発明のECDにあつても、
低抵抗電極(反射層と兼用されることもある)と
して使用される金属電極特にアルミニウム電極
は、非常に薄いことも原因して比較的腐食され易
く、従つて、寿命が短い、信頼性が低いという問
題点があつた。
However, even in the case of the ECD of the prior invention,
Metal electrodes, especially aluminum electrodes, used as low-resistance electrodes (sometimes also used as reflective layers) are relatively susceptible to corrosion, partly because they are very thin, and therefore have a short lifespan and low reliability. There was a problem.
本考案者らは、金属電極の腐食の問題について
鋭意研究した結果、単にエポキシ樹脂などの封止
材で封止しても封止層が薄いので空気や水分など
の腐食性ガスが封止層を貫いて容易に侵入し、こ
れが腐食の原因となることを発見し、その侵入を
阻止するには、封止基板及び上述のクリツプを用
いて金属電極を封止することを着想し、実験した
ところ、それでも未だ十分ではなかつた。
As a result of intensive research into the problem of corrosion of metal electrodes, the inventors of the present invention found that even if they are simply sealed with a sealing material such as epoxy resin, the sealing layer is thin, so corrosive gases such as air and moisture can penetrate the sealing layer. They discovered that metal electrodes easily penetrate through the metal electrodes and cause corrosion, and in order to prevent this penetration, they conceived and experimented with sealing the metal electrodes using a sealing substrate and the above-mentioned clips. However, it still wasn't enough.
そこで、この原因について研究したところ、金
属電極を基板と封止基板又はクリツプで挟むよう
に封止しても、金属電極の端面がそのまま空気中
に露出しているか、良くても薄い封止材で覆われ
ているに過ぎず、そのため容易に空気や水分など
の腐食性ガスが侵入することを発見し、侵入し難
くするには、金属電極を十分に大きな封止基板及
びクリツプで封止することにより、封止基板及び
クリツプが形成する封止領域よりも金属電極を内
側に形成し、それにより金属電極を端面から十分
に遠ざけ、以て端面からの侵入経路を十分に長く
し、腐食性ガスの侵入を困難にすることを着想
し、本考案を成すに至つた。 We researched the cause of this problem and found that even if the metal electrode is sandwiched between the substrate and the sealing substrate or clips, the end surface of the metal electrode remains exposed to the air, or at best the sealing material is thin. It was discovered that corrosive gases such as air and moisture can easily penetrate because the metal electrodes are only covered with By doing so, the metal electrode is formed inside the sealing area formed by the sealing substrate and the clip, thereby keeping the metal electrode sufficiently away from the end face, thereby making the penetration route from the end face sufficiently long, and preventing corrosion. The idea was to make it difficult for gas to enter, and this idea was developed.
従つて、本考案は、「基板上に下部電極、エレ
クトロクロミツク層及び上部電極の少なくとも3
層を順に積層した後、各電極の取出し部の少なく
とも一部を除いて上面を封止基板で封止し、封止
されないで露出した取出し部にそれぞれ導電性ク
リツプを取り付け、これを介して外部配線を接続
してなるエレクトロクロミツク素子に於いて、
前記上部電極及び下部電極及びそれらの取出し
部のうち金属で形成されたもの又は部分を、前記
封止基板及びクリツプが形成する封止領域より内
側にしたことを特徴とするエレクトロクロミツク
素子」を提供する。 Therefore, the present invention provides ``at least three layers of a lower electrode, an electrochromic layer, and an upper electrode on a substrate.
After laminating the layers in order, the top surface of each electrode except for at least a part of the lead-out part is sealed with a sealing substrate, and a conductive clip is attached to each of the unsealed and exposed lead-out parts, and the lead-out part is connected to the outside through this. In an electrochromic device formed by connecting wiring, those or parts of the upper electrode, the lower electrode, and their lead-out portions formed of metal are separated from the sealing region formed by the sealing substrate and the clip. The present invention provides an "electrochromic device" which is characterized in that it is made on the inside.
第5図は、本考案で使用される導電性クリツプ
の一例を示す斜視図であり、このクリツプは第6
図に示すように断面が略「コ」の字形を有する略
樋状のものである。
FIG. 5 is a perspective view showing an example of the conductive clip used in the present invention;
As shown in the figure, it is approximately gutter-shaped with a substantially U-shaped cross section.
このクリツプは、取出し部と接触する断片H1
と、基板を押さえる断片H2と、両者を接続する
連結板部H3とからなる。そして断片H1と断片H2
で、周辺部表面に取出し部が形成された基板周辺
部を挟み込む。従つて、挟み込んだ後、クリツプ
が基板から外れないように、断片H1と断片H2が
しつかりと基板にかみついていることが好まし
い。そのため、クリツプは、第6図に示すように
断片H1と断片H2との間が入口付近は狭く、連結
板部H3に近づくにつれ広くなる形状を有し、か
つバネ性を有する金属でできていることが好まし
い。金属はハンダ付けも良好に実施できるので好
ましい。好ましいバネ性を有する金属としては、
リン青銅が挙げられるが、その外ハガネなども使
用される。金属クリツプは、少なくとも取出し部
との接触面に、比較的軟らかい金属例えばスズ、
インジウム、ハンダ、それらの混合物、その他の
導電性材料で被覆されていてもよい。そのような
クリツプは、取出し部との接触が最高となろう。
なぜならば、一般には金属表面は顕微鏡で見た場
合微妙な凹凸があり、単に圧接しただけでは取出
し部との良好な接触が最高とはならないからであ
る。またリン青銅のクリツプにスズめつきする
と、耐蝕性が向上する利点もある。 This clip is connected to the piece H 1 in contact with the extraction part.
, a piece H2 that holds the board, and a connecting plate part H3 that connects the two. and fragment H 1 and fragment H 2
Then, the peripheral portion of the substrate having the extraction portion formed on the surface of the peripheral portion is sandwiched. Therefore, after being sandwiched, it is preferable that the pieces H1 and H2 firmly grip the substrate so that the clips do not come off the substrate. Therefore, as shown in Fig. 6, the clip has a shape in which the area between the fragment H1 and the fragment H2 is narrow near the entrance and widens as it approaches the connecting plate portion H3 , and is made of a metal having spring properties. Preferably. Metal is preferred because it can be soldered well. Metals with preferable spring properties include:
One example is phosphor bronze, but other materials such as steel are also used. The metal clip is made of a relatively soft metal, such as tin, at least on the contact surface with the extraction part.
It may be coated with indium, solder, mixtures thereof, or other conductive materials. Such a clip would have the best contact with the outlet.
This is because metal surfaces generally have subtle irregularities when viewed under a microscope, and mere pressure contact does not provide the best possible contact with the extraction portion. Also, tin plating on phosphor bronze clips has the advantage of improving corrosion resistance.
クリツプの長さlは、金属製取出し部より十分
に長くする。クリツプ全体の形状は、先にほぼ樋
状と述べたが、ECDの形状に合わせて、長さ方
向に湾曲していてもよい。例えばECDが矩形の
基板を持つていても基板が全体に円柱の円周面に
沿つてR(アール)を持つている場合や、基板が
矩形ではなく円を2本の平行な直線で切り落とし
たきに得られる第7図に示すごとく形状や第8図
に示すごときテレビ画面の形状を持つている場合
には、クリツプはそのような基板の周辺部の形状
に適合する形状を持つこともある。 The length l of the clip should be sufficiently longer than the metal extraction part. Although the overall shape of the clip was described above as approximately gutter-like, it may be curved in the length direction to match the shape of the ECD. For example, even if the ECD has a rectangular board, the board may have an R along the circumferential surface of a cylinder, or if the board is not a rectangle but a circle cut off with two parallel straight lines. If the clip has a shape as shown in FIG. 7 or a television screen as shown in FIG. 8, the clip may have a shape that matches the shape of the periphery of such a substrate.
ECDが全固体薄膜タイプの場合には、基板を
除くECDそれ自身の厚さは、非常に薄く(例え
ば、0.01mm以下)、それに対してクリツプは材料
の関係から、一般に0.05〜2mmと厚いので、ECD
に取りつけた場合、第9図に示すように、ECD
に比べ、クリツプの断片H1は厚くなり、従つて
ECDの表示部と断片H1との境に段差が生じる。
そこで、この段差を利用して封止基板の位置決め
を行なうと、位置決め作業が楽に正確にできる。 If the ECD is an all-solid thin film type, the thickness of the ECD itself excluding the substrate is very thin (for example, 0.01 mm or less), whereas the clip is generally thick, 0.05 to 2 mm, due to the material. ,ECD
When attached to the ECD, as shown in Figure 9,
Compared to , the clip fragment H 1 is thicker and therefore
A step appears between the ECD display section and fragment H1 .
Therefore, if the sealing substrate is positioned using this step, the positioning work can be performed easily and accurately.
この位置決め作業を更に楽に正確にするため
に、第10図に示すようにクリツプの断片H1の
先端を垂直に立てて当接片H4を設けてもよい。
クリツプが長さ方向に湾曲している場合には、予
め当接片H4のところどころに楔状のスリツト
(割り)を入れておくとと湾曲させ易い。また、
当接片H4は断片H1の先端の縁全体に立てなくと
も部分的でもよい。 In order to make this positioning work easier and more accurate, the tip of the clip segment H1 may be erected vertically to provide an abutting piece H4 , as shown in FIG.
If the clip is curved in the length direction, it is easier to curve the clip by making wedge-shaped slits (splits) here and there in advance in the abutment piece H4 . Also,
The abutting piece H4 does not need to be erected on the entire edge of the tip of the fragment H1 , but may be partially erected.
第9図に示すように、本考案では、封止基板の
左右末端がクリツプに当接しており、その間に隙
間が存在しない。仮に隙間が存在すると、取出し
部をエポキシ樹脂のごとき封止材で封止してあつ
ても封止材を突き抜けてやつて来る空気や水分な
どの腐食性ガスの影響で取出し部は腐食される。
しかし、取出し部を含めて金属電極を封止基板及
びクリツプが覆うように封止すると、取出し部は
腐食され難い。従つて、電極をAlのような腐食
されやすい金属で形成する場合にも、取出し部又
はその周辺部だけをわざわざ腐食に強いITOその
他の酸化物系材料に変える必要がなくなり、
ECDの製造コストが低下する。 As shown in FIG. 9, in the present invention, the left and right ends of the sealing substrate are in contact with the clip, and there is no gap between them. If a gap exists, even if the extraction part is sealed with a sealing material such as epoxy resin, the extraction part will be corroded by the influence of corrosive gases such as air and moisture that penetrate through the sealing material. .
However, if the metal electrode including the lead-out part is sealed with the sealing substrate and the clip, the lead-out part is less likely to be corroded. Therefore, even if the electrode is made of a metal that is easily corroded, such as Al, there is no need to change only the extraction part or the surrounding area to ITO or other oxide-based material that is resistant to corrosion.
The manufacturing cost of ECD will decrease.
本考案で使用される導電性クリツプは、エレク
トロクロミツク素子の周辺部の遮蔽材又は装飾材
を兼用していてもよい。特に基板側からECDを
見ることになる防眩ミラー(反射光量が電気的に
コントロールされるもの)の場合には、なるべく
表示部の面積を大きくして周辺部を細くすること
が美観上好ましいので、兼用することは有利であ
る。 The conductive clip used in the present invention may also serve as a shielding or decorative material for the periphery of the electrochromic device. Especially in the case of an anti-glare mirror (the amount of reflected light is electrically controlled) where the ECD is viewed from the board side, it is aesthetically preferable to make the display area as large as possible and the peripheral area thin. , it is advantageous to use both.
クリツプをECDに取りつける時期は、封止前
でも後でもよいが、封止前に取り付け、封止基板
に封止材を塗布したものをECDと張り合わせ、
その上で封止材を硬化させると、封止材が取出し
部と断片H1との間の目に見えない微小な隙間を
通じて進入し、基板端面とクリツプとの間の比較
的大きな隙間を埋める(第11図参照)。そうす
ると、封止後にクリツプを取りつけたため封止材
が隙間を埋めないときに比べ、外部の水分の取出
し部への進入が封止材のために困難になるので、
取出し部が腐食されにくくなる。また、隙間に進
入した封止材が基板とクリツプを接着することに
なるのでクリツプが基板から外れにくくなる利点
も得られる。 The clip can be attached to the ECD before or after sealing, but it should be attached before or after sealing, and the sealing material is applied to the sealing substrate and then attached to the ECD.
When the encapsulant is cured on top of that, the encapsulant enters through the invisible minute gap between the take-out part and the piece H1 and fills the relatively large gap between the edge of the substrate and the clip. (See Figure 11). In this case, compared to when the clip is attached after sealing and the sealant does not fill the gap, the sealant makes it difficult for external moisture to enter the extraction part.
The extraction part is less likely to be corroded. Furthermore, since the sealing material that has entered the gap adheres the substrate and the clip, there is an advantage that the clip is difficult to separate from the substrate.
クリツプがハンダ付け可能な材料でできている
場合には、外部配線をクリツプに接続するとき、
ハンダ付けすればよいが、クリツプが金属ででき
ている場合には、ハンダ付けに変えて圧着又は圧
締により接続してもよい。 If the clip is made of solderable material, when connecting external wiring to the clip,
Soldering is sufficient, but if the clip is made of metal, the connection may be made by crimping or clamping instead of soldering.
圧着又は圧締の方法としては、金属製のクリツ
プを使用した場合には、例えば(1)単にクリツプ末
端(特に断片H3)と基板との間に剥き出しにし
た外部配線を挟み込む方法、その変形例としてク
リツプの長さ方向の途中に穴又は溝又はスリツト
(割り)を開け、この穴又は溝を通じて剥き出し
にした外部配線の先端を差入れて、クリツプ(特
に断片H3)と基板との間に挟み込む方法、その
変形例としてクリツプの長さ方向の途中に2カ所
の穴又は溝又はスリツト(割り)を開け、第1の
穴又は溝又はスリツト(割り)から剥き出しにし
た外部配線の先端を差入れて第2の穴又は溝又は
スリツト(割り)から差し出し、剥き出しにした
外部配線をクリツプ(特に断片H3)と基板との
間に挟み込む方法、(2)長めのクリツプを用い、
ECDからはみ出したクリツプに、剥き出しにし
た外部配線の先端を差入れた後、クリツプを押し
つぶす方法、(3)クリツプの長さ方向の途中又は末
端に第12図に示すように例えば断面がほぼ逆
「J」の字形の圧着片H5を設け、これの間に剥き
出しにした外部配線LAの先端を圧着する方法な
どが挙げられる。尚、圧着片H5は、断片H1の一
部を折り曲げて作成してもよい。 When using metal clips, crimping or clamping methods include (1) simply sandwiching the exposed external wiring between the end of the clip (particularly fragment H 3 ) and the board, and variations thereof; For example, a hole, a groove, or a slit is made in the middle of the clip in the length direction, and the exposed end of the external wiring is inserted through this hole or groove to create a gap between the clip (particularly fragment H 3 ) and the board. As a modification of the pinching method, two holes, grooves, or slits (splits) are made in the middle of the clip in the length direction, and the exposed tip of the external wiring is inserted through the first hole, groove, or slit (splits). (2) using a longer clip, inserting it through the second hole, groove or slit, and sandwiching the exposed external wiring between the clip (particularly the fragment H 3 ) and the board;
A method of inserting the tip of the exposed external wiring into the clip protruding from the ECD and then crushing the clip. An example of this method is to provide a "J"-shaped crimp piece H5 and crimp the exposed tip of the external wiring L A between these pieces. Note that the crimp piece H5 may be created by bending a part of the piece H1 .
外部配線のクリツプへの接続時期は、接続がハ
ンダ付けの場合、ECDに取りつける前に行なう
ことが好ましい。そうすれば、ECDがハンダ付
けの熱を受けず、熱による損傷の危険がなくな
る。 When connecting the external wiring to the clip, if the connection is made by soldering, it is preferable to connect it before attaching it to the ECD. This way the ECD will not be exposed to the heat of soldering and there will be no risk of heat damage.
外部配線とクリツプとの接続部は、物理的、化
学的に弱いので、封止することが好ましい。この
封止は、ECDの封止と同時に行なうと、別の封
止工程が不要になるので特に好ましい。 Since the connection between the external wiring and the clip is physically and chemically weak, it is preferable to seal it. It is particularly preferable to perform this sealing simultaneously with the sealing of the ECD, since this eliminates the need for a separate sealing step.
一方、本考案に於けるECDの積層構造は、特
にどれと限定されるものではないが、固体型
ECDの構造としては、例えば電極層/EC層/
イオン導電層/電極層のような4層構造、電極
層/還元着色型EC層/イオン導電層/可逆的電
解酸化層ないし酸化着色型EC層/電極層のよう
な5層構造があげられる。 On the other hand, although the laminated structure of the ECD in the present invention is not particularly limited, it is a solid type.
The structure of ECD is, for example, electrode layer/EC layer/
Examples include a four-layer structure such as an ion conductive layer/electrode layer, and a five-layer structure such as an electrode layer/reduction colored EC layer/ion conductive layer/reversible electrolytic oxidation layer or oxidation colored EC layer/electrode layer.
透明電極の材料としては、例えばSnO2,In2
O3,ITOなどが使用される。このような電極層
は、一般には真空蒸着、イオンプレーテイング、
スパツタリングなどの真空薄膜形成技術で形成さ
れる。(還元着色性)EC層としては一般にWO3,
MoO3などが使用される。 Examples of materials for the transparent electrode include SnO 2 , In 2
O 3 , ITO, etc. are used. Such electrode layers are generally formed by vacuum evaporation, ion plating,
It is formed using vacuum thin film forming techniques such as sputtering. (Reduction colorability) The EC layer is generally WO 3 ,
MoO 3 etc. are used.
イオン導電層としては、例えば酸化ケイ素、酸
化タンタル、酸化チタン、酸化アルミニウム、酸
化ニオブ、酸化ジルコニウム、酸化ハフニウム、
酸化ランタン、フツ化マグネシウムなどが使用さ
れる。これらの物質薄膜は製造方法により電子に
対して絶縁体であるが、プロトン(H+)および
ヒドロキシイオン(OH-)に対しては良導体と
なる。EC層の着色消色反応にはカチオンが必要
とされ、H+イオンやLi+イオンをEC層その他に
含有させる必要がある。H+イオンは初めからイ
オンである必要はなく、電圧が印加されたときに
H+イオンが生じればよく、従つてH+イオンの代
わりに水を含有させてもよい。この水は非常に少
なくて十分であり、しばしば、大気中から自然に
侵入する水分でも着消色する。 Examples of the ion conductive layer include silicon oxide, tantalum oxide, titanium oxide, aluminum oxide, niobium oxide, zirconium oxide, hafnium oxide,
Lanthanum oxide, magnesium fluoride, etc. are used. Although thin films of these materials are insulators for electrons due to the manufacturing method, they are good conductors for protons (H + ) and hydroxy ions (OH − ). Cations are required for the coloring and decoloring reaction of the EC layer, and it is necessary to contain H + ions and Li + ions in the EC layer and other parts. H + ions do not need to be ions to begin with, and when a voltage is applied,
It is sufficient that H + ions are generated, and therefore water may be contained instead of H + ions. Very little of this water is sufficient, and often even moisture that naturally enters from the atmosphere will discolor.
EC層とイオン導電層とは、どちらを上にして
も下にしてもよい。さらにEC層に対して間にイ
オン導電層を挟んで可逆的電解酸化層(ないし酸
化着色型EC層)又は触媒層を配設してもよい。
このような層としては、例えば酸化ないし水酸化
イリジウム、同じくニツケル、同じくクロム、同
じくバナジウム、同じくルテニウム、同じくロジ
ウムなどがあげられる。これらの物質は、イオン
導電層又は透明電極中に分散されていても良い
し、それらを分散していてもよい。不透明な電極
層は、反射層と兼用していてもよく、例えば金、
銀、アルミニウム、クロム、スズ、亜鉛、ニツケ
ル、ルテニウム、ロジウム、ステンレスなどの金
属が使用される。 The EC layer and the ion conductive layer may be placed either on top or on the bottom. Furthermore, a reversible electrolytic oxidation layer (or oxidation-colored EC layer) or a catalyst layer may be provided to the EC layer with an ion conductive layer interposed therebetween.
Such layers include, for example, iridium oxide or hydroxide, nickel, chromium, vanadium, ruthenium, rhodium, and the like. These substances may be dispersed in the ion conductive layer or the transparent electrode, or may be dispersed therein. The opaque electrode layer may also serve as a reflective layer, for example, gold,
Metals such as silver, aluminum, chromium, tin, zinc, nickel, ruthenium, rhodium, and stainless steel are used.
以下、第1〜3図を引用して本考案を実施例に
より詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples with reference to FIGS.
矩形のガラス基板Sの表面全体にITO電極層を
形成し、次にフオトエツチングによりパターニン
グして上部電極A用の予備取出し部Fpと、それか
ら離れた下部電極Bと、下部電極Bに一連に続く
取出し部B1を形成した(第2〜3図参照)。尚、
場合により、予備取出し部Fpはなくともよく、ま
たITOをマスク蒸着することにより直接にこれら
のパターンを形成してもよい。
An ITO electrode layer is formed on the entire surface of a rectangular glass substrate S, and then patterned by photo-etching to form a preliminary lead-out part Fp for the upper electrode A, a lower electrode B separated from it, and a series of lower electrodes B. A subsequent take-out portion B1 was formed (see Figures 2 and 3). still,
In some cases, the preliminary extraction portion F p may be omitted, and these patterns may be directly formed by mask vapor deposition of ITO.
次に酸化イリジウムと酸化スズとの混合物から
なる可逆的電解酸化層C、酸化タンタル層D及び
酸化タングステン層Eを順に形成した。 Next, a reversible electrolytic oxidation layer C made of a mixture of iridium oxide and tin oxide, a tantalum oxide layer D, and a tungsten oxide layer E were formed in this order.
その後上部電極A及び取出し部FとしてAlを
マスク蒸着し、この時Alは既に基板S上に形成
された予備取出し部Fpのほぼ全体を被覆するよう
に形成した。マスク蒸着したAlパターンのうち
予備取出し部Fpの上に乗つている部分が上部電極
の取出し部Fを構成する。 Thereafter, Al was vapor-deposited using a mask as the upper electrode A and the lead-out part F, and at this time, Al was formed so as to cover almost the entire preliminary lead-out part F p already formed on the substrate S. The portion of the mask-deposited Al pattern that rests on the preliminary extraction portion F p constitutes the extraction portion F of the upper electrode.
Al電極は、基板Sの外郭線よりも内側に形成
し、かつ第14図に示すように封止基板及びクリ
ツプが形成する封止領域(1点鎖線で示す)より
も内側に形成しなければならない。これにより腐
食性ガスの端面(基板端面、封止基板端面及びク
リツプ端面)からAl電極への侵入経路を十分に
長くとり、Al電極の腐食防止する。 The Al electrode must be formed inside the outline of the substrate S, and inside the sealing area (indicated by a dashed line) formed by the sealing substrate and the clip, as shown in FIG. No. This allows a sufficiently long path for corrosive gas to enter the Al electrode from the end surfaces (substrate end surface, sealing substrate end surface, and clip end surface), thereby preventing corrosion of the Al electrode.
次に、予めリン青銅製の導電性クリツプHを2
本用意し、これにそれぞれ外部配線LA又はLBを
ハンダ付け又は導電性接着剤にて接続した。 Next, attach two conductive clips H made of phosphor bronze in advance.
This was prepared and the external wiring L A or L B was connected to it by soldering or conductive adhesive.
このクリツプHを基板の短辺側にそれぞれ装着
し、これによりクリツプの断片H1が取出し部F,
B1を圧着するようにした。 The clips H are attached to the short sides of the board, so that the clip fragments H1 can be attached to the extraction parts F,
B 1 was crimped.
最後にエポキシ樹脂封止材Rを多めに塗布した
封止用ガラス板GをECDの上に重ね合わせ、対
向する2本のクリツプの間に封止基板Gを納め
た。2本のクリツプHの間隔とガラス板Gの長さ
をほぼ一致させてあるので、クリツプの間にガラ
ス板Gを納めることでガラス板Gの位置決めは、
容易にかつ素早くできた。この状態でのクリツプ
Hと封止基板GとAl上部電極AとAl取出し部F
との位置を第14図に示す。これにより、Al電
極が封止基板及びクリツプで封止され、かつAl
電極端面が封止基板端面及びクリツプ端面から十
分に離れていることが一層理解されよう。 Finally, the sealing glass plate G coated with a large amount of epoxy resin sealant R was placed on top of the ECD, and the sealing substrate G was placed between the two opposing clips. Since the distance between the two clips H and the length of the glass plate G are almost the same, the positioning of the glass plate G can be done by placing the glass plate G between the clips.
It was easy and quick. Clip H, sealing substrate G, Al upper electrode A, and Al extraction part F in this state
Fig. 14 shows the position of . As a result, the Al electrode is sealed with the sealing substrate and the clip, and the Al electrode is sealed with the sealing substrate and the clip.
It will be further appreciated that the electrode end face is sufficiently separated from the sealing substrate end face and the clip end face.
封止材Rが硬化するまで放置すると、余分の封
止材Rが取出し部、クリツプの一部と外部配線接
続部を覆い、かつ基板Sとクリツプとの隙間を埋
め、それらを封止した。これによりクリツプは基
板に確固として接着され、外すことはできなかつ
た。 When the sealing material R was left to harden, the excess sealing material R covered the take-out portion, a part of the clip, and the external wiring connection portion, and filled the gap between the substrate S and the clip, thereby sealing them. This made the clip firmly adhered to the substrate and could not be removed.
こうして、本実施例のECDを作製した。この
ECDの垂直断面を第1図に示す。この図は、一
部をデホルメしてあり、正確な寸法比を有しな
い。 In this way, the ECD of this example was produced. this
A vertical section of the ECD is shown in Figure 1. This figure is partially deformed and does not have accurate dimensional ratios.
このECDに駆動電源Suから着色電圧(+
1.35V)を印加すると、基板S側から入射させた
波長633nmの光Lに対し、反射率が15%に減少し
(10秒後)、この反射率は電圧印加を止めても、し
ばらく保たれた。今度は消色電圧(−1.35V)を
印加すると、同じく反射率は65%に回復した(10
秒後)。 Coloring voltage (+) is applied to this ECD from the drive power supply Su.
When a voltage of 1.35V) is applied, the reflectance decreases to 15% (after 10 seconds) for light L with a wavelength of 633 nm incident from the substrate S side, and this reflectance is maintained for a while even after the voltage application is stopped. Ta. When a decoloring voltage (-1.35V) was applied this time, the reflectance recovered to 65% (10
seconds later).
従つて、本実施例のECDは、自動車その他の
妨眩ミラーとして有用で、後ろから接近する自動
車の強いライトがミラーに当たつたとき、電圧を
印加して反射率を落とせば、ドライバーは眩しく
なくなる。 Therefore, the ECD of this embodiment is useful as an anti-glare mirror for automobiles and other vehicles.When the strong light of a car approaching from behind hits the mirror, applying a voltage to reduce the reflectance will prevent the driver from being dazzled. It disappears.
尚、この実施例では、上部電極、下部電極とも
取出し部は基板の短辺側にそれぞれ1カ所設けた
が、端末部にも取出し部を設け、両方から電荷を
供給してもよい。この場合には、一方の電極の取
出し部を基板の両短辺側に設け、他方の電極の取
出し部を基板の両短辺側に設け、他方の電極の取
出し部を基板の両長辺側に設け、クリツプは基板
の4辺全部に設けることになる。 In this embodiment, the upper electrode and the lower electrode each have one extraction portion on the short side of the substrate, but an extraction portion may also be provided at the terminal portion and charges may be supplied from both. In this case, the lead-out parts of one electrode are provided on both short sides of the substrate, the lead-out parts of the other electrode are provided on both short sides of the board, and the lead-out parts of the other electrode are provided on both long sides of the board. The clips will be provided on all four sides of the board.
また、この実施例では、ITO取出し部B1につ
いても、Al取出し部Fと同様にクリツプHを取
りつけて封止したが、ITOは腐食に強いので極端
な場合にはクリツプHから露出していてもよい。
とにかく、腐食し易い金属電極の端面が基板、封
止基板及びクリツプの各端面から十分に離れてい
ればよい。 In addition, in this example, the ITO extraction part B1 was also sealed by attaching a clip H in the same way as the Al extraction part F, but since ITO is resistant to corrosion, in extreme cases it may be exposed from the clip H. Good too.
In any case, it is sufficient that the end surface of the metal electrode, which is susceptible to corrosion, is sufficiently separated from each end surface of the substrate, the sealing substrate, and the clip.
以上の通り、本考案によれば、ECDの電極の
取出し部に予め導電性クリツプを取り付け、これ
を介して外部配線を接続したとき、腐食され易い
金属電極を封止基板及びクリツプが形成する封止
領域より内側に形成し、これにより金属電極の端
面を基板端面、封止基板端面及びクリツプ端面よ
り十分に離して封止し、以て端面から侵入する腐
食性ガスの金属電極への到達を困難にしたので、
寿命が長くなり、信頼性が高まる。
As described above, according to the present invention, when a conductive clip is attached in advance to the electrode extraction part of the ECD and external wiring is connected through this, the sealing substrate and the clip form a seal that protects the metal electrode that is easily corroded. This seals the end face of the metal electrode at a sufficient distance from the end face of the substrate, the end face of the sealing substrate, and the end face of the clip, thereby preventing corrosive gas entering from the end face from reaching the metal electrode. I made it difficult,
Longer life and increased reliability.
第1図は、本考案の実施例にかかるECDの概
略垂直断面図である。第2図は、前記実施例にか
かるITO電極パターンの形成された基板Sの概略
平面図である。第3図は、第2図の矢視断面図で
ある。第4図は、従来のECDの概略垂直断面図
である。第5図は、導電性クリツプの一例を示す
斜視図である。第6図は、第5図の導電性クリツ
プの断面図である。第7図は、基板の一例を示す
平面図である。第8図は、基板の一例を示す平面
図である。第9図は、第1図よりも実際に近い寸
法比で表した本考案のECDの一例を示す概略断
面図である。第10図は、他の例の導電性クリツ
プの断面図である。第11図は、基板と導電性ク
リツプとの隙間に封止材が進入した様子を示す説
明図である。第12図は、更に別の例の導電性ク
リツプの断面図である。第13図は、本考案の実
施例で、最後に上部電極A及びその取出し部Fと
してAlをマスク蒸着した様子を示す概略平面図
である。想像線(2点鎖線)は封止基板Gを表わ
し、基板の両側にクリツプHが用意されている。
第14図は、実施例のECDに於いて、Al電極パ
ターンAlと、クリツプHと封止基板Gとの位置
関係を示す説明図である。
主要部分の符号の説明、S……基板、A……上
部電極、B……下部電極、B1……下部電極の取
出し部、E……還元着色性EC層又はWO3層、F
……上部電極の取出し部、Fp……上部電極の予備
取出し部、H……導電性クリツプ、G……封止基
板(ガラス板)、R……封止材、LA,LB……外部
配線、Al……アルミニウム電極(金属電極の一
種)、K……封止領域。
FIG. 1 is a schematic vertical sectional view of an ECD according to an embodiment of the present invention. FIG. 2 is a schematic plan view of the substrate S on which the ITO electrode pattern according to the embodiment is formed. FIG. 3 is a sectional view taken along the arrow in FIG. 2. FIG. 4 is a schematic vertical cross-sectional view of a conventional ECD. FIG. 5 is a perspective view showing an example of a conductive clip. FIG. 6 is a cross-sectional view of the conductive clip of FIG. 5. FIG. 7 is a plan view showing an example of the substrate. FIG. 8 is a plan view showing an example of the substrate. FIG. 9 is a schematic cross-sectional view showing an example of the ECD of the present invention, expressed in a dimension ratio closer to the actual size than that in FIG. 1. FIG. 10 is a sectional view of another example of a conductive clip. FIG. 11 is an explanatory diagram showing how the sealing material has entered the gap between the substrate and the conductive clip. FIG. 12 is a cross-sectional view of yet another example of a conductive clip. FIG. 13 is a schematic plan view showing a state in which Al was finally mask-deposited as the upper electrode A and its extraction portion F in an embodiment of the present invention. The imaginary line (two-dot chain line) represents the sealing substrate G, and clips H are prepared on both sides of the substrate.
FIG. 14 is an explanatory diagram showing the positional relationship between the Al electrode pattern Al, the clip H, and the sealing substrate G in the ECD of the example. Explanation of symbols of main parts, S...substrate, A...upper electrode, B...lower electrode, B1 ...lower electrode extraction part, E...reduction coloring EC layer or WO 3 layer, F
... Upper electrode extraction part, F p ... Upper electrode preliminary extraction part, H ... Conductive clip, G ... Sealing substrate (glass plate), R ... Sealing material, L A , L B ... ...External wiring, Al...Aluminum electrode (a type of metal electrode), K...Sealing area.
Claims (1)
及び上部電極の少なくとも3層を順に積層した
後、各電極の取出し部の少なくとも一部を除い
て上面を封止基板で封止し、封止されないで露
出した取出し部にそれぞれ導電性クリツプを取
り付け、これを介して外部配線を接続してなる
エレクトロクロミツク素子に於いて、 前記上部電極及び下部電極及びそれらの取出
し部のうち金属で形成されたもの又は部分を、
前記封止基板及びクリツプが形成する封止領域
より内側にしたことを特徴とするエレクトロク
ロミツク素子。 2 前記導電性クリツプが、ほぼコの字形の断面
を有するほぼ樋状の金属からなることを特徴と
する実用新案登録請求の範囲第1項記載のエレ
クトロクロミツク素子。 3 前記金属がアルミニウムからなることを特徴
とする実用新案登録請求の範囲第1項記載のエ
レクトロクロミツク素子。[Claims for Utility Model Registration] 1. After at least three layers of a lower electrode, an electrochromic layer, and an upper electrode are sequentially laminated on a substrate, the upper surface is covered with a sealing substrate except for at least a part of the lead-out portion of each electrode. In an electrochromic device formed by sealing and attaching conductive clips to the unsealed and exposed extraction parts, and connecting external wiring through these, the upper electrode and the lower electrode and their extraction parts Items or parts made of metal,
An electrochromic device, characterized in that it is located inside a sealing region formed by the sealing substrate and the clip. 2. The electrochromic device according to claim 1, wherein the conductive clip is made of a substantially gutter-shaped metal having a substantially U-shaped cross section. 3. The electrochromic device according to claim 1, wherein the metal is made of aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10088686U JPH055536Y2 (en) | 1986-07-01 | 1986-07-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10088686U JPH055536Y2 (en) | 1986-07-01 | 1986-07-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS636424U JPS636424U (en) | 1988-01-16 |
| JPH055536Y2 true JPH055536Y2 (en) | 1993-02-15 |
Family
ID=30971120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10088686U Expired - Lifetime JPH055536Y2 (en) | 1986-07-01 | 1986-07-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH055536Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0631451Y2 (en) * | 1987-03-23 | 1994-08-22 | 株式会社村上開明堂 | Electrode structure of ECD mirror |
| JPH0631452Y2 (en) * | 1988-03-11 | 1994-08-22 | 株式会社ニコン | An electrochromic device equipped with a long clip provided with a slit portion and an external wiring connection portion |
| JP4101864B2 (en) * | 2002-11-18 | 2008-06-18 | 株式会社村上開明堂 | Solid EC element |
-
1986
- 1986-07-01 JP JP10088686U patent/JPH055536Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS636424U (en) | 1988-01-16 |
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