JPH0555854A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH0555854A JPH0555854A JP21503591A JP21503591A JPH0555854A JP H0555854 A JPH0555854 A JP H0555854A JP 21503591 A JP21503591 A JP 21503591A JP 21503591 A JP21503591 A JP 21503591A JP H0555854 A JPH0555854 A JP H0555854A
- Authority
- JP
- Japan
- Prior art keywords
- film
- acoustic wave
- surface acoustic
- sputtering method
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 33
- 239000010432 diamond Substances 0.000 claims abstract description 17
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 9
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 7
- 238000003780 insertion Methods 0.000 abstract description 7
- 230000037431 insertion Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 32
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013211 curve analysis Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高周波域で使用される表
面弾性波素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used in a high frequency range.
【０００２】[0002]
【従来の技術】固体の表面にエネルギーが集中して伝搬
する表面弾性波を利用した表面弾性波素子は、小型で性
能の安定な物を作れることからＴＶ受信機の中間周波フ
ィルター等として用いられている。この表面弾性波は通
常、圧電体上の櫛型電極に交流電界を印加することで励
起される。圧電体材料としては、水晶、ＬｉＮｂＯ、Ｌ
ｉＴａＯ等のバルク単結晶やＺｎＯ薄膜を基板上に気相
成長させたものなどが用いられている。2. Description of the Related Art A surface acoustic wave device utilizing a surface acoustic wave in which energy is concentrated and propagated on the surface of a solid is used as an intermediate frequency filter of a TV receiver because it is small and stable in performance. ing. This surface acoustic wave is usually excited by applying an alternating electric field to the comb-shaped electrode on the piezoelectric body. As the piezoelectric material, quartz, LiNbO, L
A bulk single crystal such as iTaO or a ZnO thin film vapor-deposited on a substrate is used.
【０００３】一般に、表面弾性波素子の動作周波数ｆは
ｆ＝ｖ／λ｛ｖ：表面弾性波の伝搬速度｝で決定され
る。λは図３に示した様に櫛型電極の周期で決定され
る。ｖの値は単結晶圧電体のＬｉＮｂＯを用いた場合に
は３５００〜４０００ｍ／ｓ、ＬｉＴａＯでは３３００
〜３４００ｍ／ｓ程度であり、ＺｎＯの圧電体薄膜をガ
ラス基板上に成長させたものでは最大３０００ｍ／ｓ程
度である。Generally, the operating frequency f of the surface acoustic wave element is determined by f = v / λ {v: propagation velocity of surface acoustic wave}. λ is determined by the period of the comb-shaped electrodes as shown in FIG. The value of v is 3500 to 4000 m / s when LiNbO of a single crystal piezoelectric is used, and 3300 when LiTaO.
It is about 3400 m / s, and is about 3000 m / s at the maximum when a piezoelectric thin film of ZnO is grown on a glass substrate.
【０００４】ｆを大きくするにはｖを大きくするかλを
小さくすればよいが、ｖの値は上述のように材料特性に
より制限され、また微細加工技術の限界（フォトリソグ
ラフィー技術では０．８μｍまで、電子ビーム露光技術
を使用すればサブミクロンの加工が可能であるが線幅が
小さくなるほど歩留りは悪くなる）のため櫛型電極の周
期サイズには下限がある。このような理由から現在実用
化されている表面弾性波素子の動作周波数は９００ＭＨ
ｚまでである。To increase f, v may be increased or λ may be decreased. However, the value of v is limited by the material characteristics as described above, and the limit of fine processing technology (0.8 μm in photolithography technology). Up to this point, if the electron beam exposure technique is used, submicron processing is possible, but the yield becomes worse as the line width becomes smaller). For this reason, the operating frequency of the surface acoustic wave device currently in practical use is 900 MHz.
up to z.
【０００５】一方、衛星通信や移動体通信等の通信の高
周波化が進むに伴ってより高周波（ＧＨｚ帯）で利用で
きる表面弾性波素子が必要とされており、開発が進めら
れている。一般に、基板上に成長させた圧電体薄膜を使
用した表面弾性波素子の場合には、基板材料の音速が圧
電体のそれよりも大きい時には複数の表面弾性波（ｖの
小さい方から０次モード、１次モード、２次モード、・
・・）が励起され、また基板材料の音速が大きいほどｖ
の値は大きくなる。On the other hand, as the frequency of communication such as satellite communication and mobile communication becomes higher, a surface acoustic wave device that can be used at a higher frequency (GHz band) is required and is being developed. Generally, in the case of a surface acoustic wave device using a piezoelectric thin film grown on a substrate, when the acoustic velocity of the substrate material is higher than that of the piezoelectric substance, a plurality of surface acoustic waves (from the smaller v to the 0th mode Primary mode, secondary mode,
・ ・) Is excited and the sound velocity of the substrate material is higher,
The value of becomes large.
【０００６】そこで、音速の大きいサファイヤ（横波の
速度＝６０００ｍ／ｓ、縦波の速度＝１２０００ｍ／
ｓ）を基板上にＺｎＯ圧電体薄膜を成長させた構造でｖ
＝５５００ｍ／ｓを有する素子が試作されている。（特
開昭50-154088等）また、ダイヤモンドは物質中最高の
音速を有しており（横波の速度＝１３０００ｍ／ｓ、縦
波の速度＝１６０００ｍ／ｓ）これを基材に用いれば１
００００ｍ／ｓ以上のｖを実現でき開発が進んでいる。
ダイヤモンド状炭素膜もダイヤモンドと同等の音速を有
しておりこれを基材に用いても同様に大きいｖを実現で
きる。Therefore, a sapphire having a high sound velocity (transverse wave velocity = 6000 m / s, longitudinal wave velocity = 12000 m / s)
s) is a structure in which a ZnO piezoelectric thin film is grown on a substrate.
= 5500 m / s has been prototyped. Further, diamond has the highest sound velocity in the substance (transverse wave velocity = 13000 m / s, longitudinal wave velocity = 16000 m / s).
Development is progressing to realize v of 0000 m / s or more.
The diamond-like carbon film also has a sound velocity equivalent to that of diamond, and even if it is used as a base material, similarly large v can be realized.
【０００７】このようなダイヤモンドと圧電体の積層構
造は特開平01-20714、特開平01-62911などに示されてい
る。この構造の表面弾性波素子においては、圧電体の性
質が素子の特性に大きく影響する。具体的には、たとえ
ばダイヤモンド上に圧電体材料であるＺｎＯ膜を形成し
て利用する場合には従来通常高周波スパッタリング法に
より形成したｃ軸配向多結晶膜を応用するが、このｃ軸
配向ＺｎＯ膜のｃ軸配向性、粒径、表面平坦性、抵抗
率、膜のダイヤモンド基板への密着性、等が表面弾性波
の励起効率や波の伝搬損失に影響する。Such a laminated structure of diamond and a piezoelectric material is disclosed in Japanese Patent Laid-Open Nos. 01-20714 and 01-62911. In the surface acoustic wave device having this structure, the properties of the piezoelectric body greatly affect the properties of the device. Specifically, for example, when a ZnO film, which is a piezoelectric material, is formed and used on diamond, a c-axis oriented polycrystalline film formed by a conventional high frequency sputtering method is conventionally used. C-axis orientation, particle size, surface flatness, resistivity, adhesion of film to diamond substrate, etc. affect the surface acoustic wave excitation efficiency and wave propagation loss.
【０００８】たとえばｃ軸配向性が不十分であるとＺｎ
Ｏ膜の圧電性が不十分になり表面弾性波が励起されなく
なってしまう。通常膜のＸ線ロッキングカーブ分析によ
るσ値が５度以内の配向性がないと実用にはならずこの
値は小さいほど好ましい。ＲＦスパッタリング法でダイ
ヤモンド基板上にＺｎＯ膜を形成する場合にはこの値は
通常２〜３度である。For example, if the c-axis orientation is insufficient, Zn
The piezoelectricity of the O film becomes insufficient and the surface acoustic wave is not excited. Usually, if the σ value by X-ray rocking curve analysis of the film does not have orientation within 5 degrees, it is not practical and it is preferable that this value is smaller. When the ZnO film is formed on the diamond substrate by the RF sputtering method, this value is usually 2 to 3 degrees.
【０００９】膜の粒径は小さいほど表面平坦性は良好
で、表面が平坦なほど表面弾性波の伝搬損失は小さく抑
えられる。伝搬損失が大きくなりすぎると素子での損失
が大きくなることになり実用できなくなる。つまり膜の
表面は平坦であることが望まれる。ＲＦスパッタリング
法によるダイヤモンド基板上のＺｎＯ膜でσ値が２〜３
度程度のものは膜厚が１μｍで粒径が５０ｎｍ程度にな
りこれに対応して数１０ｎｍ程度の表面凹凸がある。The smaller the particle size of the film, the better the surface flatness, and the flatter the surface, the smaller the propagation loss of the surface acoustic wave. If the propagation loss becomes too large, the loss in the element becomes too large to be practical. That is, it is desired that the surface of the film be flat. ZnO film on a diamond substrate by RF sputtering method has a σ value of 2 to 3
If the thickness is about 1 degree, the film thickness is about 1 μm and the particle size is about 50 nm, and correspondingly, there is surface unevenness of about several tens of nm.
【００１０】圧電体膜で表面弾性波を励起するためには
膜は高抵抗である必要がある。ＲＦスパッタリングによ
るＺｎＯ膜はＺｎとＯのストイキオメトリが１：１にな
りにくい性質があり、Ｚｎが過剰になるためｎ型半導体
になり導電性を持つ性質がある。これを高抵抗な膜にす
るために通常スパッタリングの際にＺｎＯにＬｉをドー
ピングすることで電荷を補償し膜の高抵抗化を図って実
用している。このＲＦスパッタリングによるＬｉドープ
されたｃ軸配向ＺｎＯ膜の抵抗率は通常１０6Ω・ｃｍ
程度に制御することができる。In order to excite surface acoustic waves with a piezoelectric film, the film needs to have a high resistance. A ZnO film formed by RF sputtering has a property that stoichiometry of Zn and O is unlikely to be 1: 1 and has an property of becoming an n-type semiconductor and having conductivity because Zn is excessive. In order to make this a high resistance film, ZnO is usually doped with Li at the time of sputtering to compensate the electric charge and to increase the resistance of the film for practical use. The resistivity of the Li-doped c-axis oriented ZnO film formed by RF sputtering is usually 10 6 Ω · cm.
Can be controlled to a degree.
【００１１】[0011]
【発明が解決しようとする課題】前述のように従来のＲ
Ｆスパッタリング法によると、ダイヤモンド基板上にｃ
軸配向ＺｎＯ多結晶膜を形成した場合、膜厚１μｍで粒
径が５０ｎｍ程度と大きく、また高抵抗化する必要から
Ｌｉ不純物をドーピングしている。このような結晶の不
完全性があることから、表面弾性波の伝搬損失が大きく
なってしまう（１ＧＨｚで約７０ｄＢ／ｃｍ）という問
題があった。このため素子の入出力間での挿入損失が大
きくなってしまい応用用途が制限されていた。このよう
な伝搬損失の問題は特に素子の応用周波数が高くなって
くるほど大きな問題になっていた。As described above, the conventional R
According to the F sputtering method, c on the diamond substrate
When the axially oriented ZnO polycrystal film is formed, the film thickness is as large as 1 μm and the grain size is as large as about 50 nm, and Li impurities are doped to increase the resistance. Due to such imperfections of the crystal, there is a problem that the propagation loss of the surface acoustic wave becomes large (about 70 dB / cm at 1 GHz). For this reason, the insertion loss between the input and output of the device becomes large, limiting the application. Such a problem of propagation loss has become a serious problem especially as the applied frequency of the device becomes higher.
【００１２】[0012]
【課題を解決するための手段】本発明の表面弾性波素子
は、ダイヤモンドと圧電体層と電極を積層してなる表面
弾性波素子においてＥＣＲスパッタリング法により圧電
体層を形成したことを特徴とする表面弾性波素子であ
る。従来のＲＦスパッタリング法に変わってＥＣＲスパ
ッタリング法によりダイヤモンド基板上にＺｎＯ膜を形
成したものを用いていることが特徴である。The surface acoustic wave device of the present invention is characterized in that a piezoelectric layer is formed by ECR sputtering in a surface acoustic wave device formed by laminating diamond, a piezoelectric layer and an electrode. It is a surface acoustic wave device. The feature is that a ZnO film is formed on a diamond substrate by an ECR sputtering method instead of the conventional RF sputtering method.
【００１３】[0013]
【作用】本発明者らはＥＣＲスパッタリング法によりダ
イヤモンド基板上へのＺｎＯ膜形成を試み、良好なｃ軸
配向性を有しているだけでなく、粒径が小さく（膜厚１
μｍで粒径１０ｎｍ）表面平坦性に優れており（表面凹
凸１０ｎｍ以下）、さらに従来のＲＦスパッタリングと
異なりＬｉをドープしなくても１０6Ω・ｃｍ程度の高
抵抗を有するＺｎＯ膜を形成できることを見いだした。
そしてこのＺｎＯ膜とダイヤモンドの積層構造では表面
弾性波の伝搬損失を１ＧＨｚで２０ｄＢ／ｃｍと小さく
できることを見いだした。この結果従来のＲＦスパッタ
リングによるＺｎＯ膜を用いたものより挿入損失の小さ
い表面弾性波素子を作成できるに至った。The present inventors have tried to form a ZnO film on a diamond substrate by the ECR sputtering method, and have not only a good c-axis orientation but also a small grain size (film thickness 1
Excellent surface flatness (surface roughness of 10 nm or less) in μm and a particle size of 10 nm). Furthermore, unlike conventional RF sputtering, a ZnO film having a high resistance of about 10 6 Ω · cm can be formed without doping with Li. I found it.
Then, it was found that in the laminated structure of this ZnO film and diamond, the surface acoustic wave propagation loss can be reduced to 20 dB / cm at 1 GHz. As a result, a surface acoustic wave device having a smaller insertion loss than that using a conventional ZnO film formed by RF sputtering can be produced.
【００１４】[0014]
【実施例】［実施例］図１に示した構造の表面弾性波フ
ィルターを作成した。Ｓｉ基板１上にＨ2とＣＨ4を原料
ガスとしてマイクロ波プラズマＣＶＤ法により多結晶ダ
イヤモンド膜２を形成し、表面研磨後、２対の（入力及
び出力用）Ａｌ櫛型電極３（線幅：２μｍ、交差幅：６
００μｍ、対数：５０対、伝搬距離：５００μｍ）を形
成した。この上にＥＣＲスパッタリング法により膜厚１
μｍのＺｎＯ膜４を形成した。スパッタリング条件は、
基板温度：３００℃、スパッタリングガス：酸素、ガス
圧力：７×１０-2Ｐａ、マイクロ波パワー：２００Ｗ、
円筒ターゲット電圧：６００Ｖ、ターゲット材料：金属
Ｚｎであった。[Example] [Example] A surface acoustic wave filter having the structure shown in Fig. 1 was prepared. A polycrystalline diamond film 2 is formed on a Si substrate 1 by a microwave plasma CVD method using H 2 and CH 4 as source gases, and after surface polishing, 2 pairs of (for input and output) Al comb electrodes 3 (line width) : 2 μm, crossing width: 6
00 μm, logarithm: 50 pairs, propagation distance: 500 μm). A film thickness of 1 on top of this by ECR sputtering
A ZnO film 4 having a thickness of μm was formed. The sputtering conditions are
Substrate temperature: 300 ° C., sputtering gas: oxygen, gas pressure: 7 × 10 −2 Pa, microwave power: 200 W,
The cylindrical target voltage was 600 V and the target material was metallic Zn.
【００１５】このＺｎＯ膜のｃ軸配向性はσ＝１．０度
と良好で、また粒径は１０ｎｍ、表面平坦性は数ｎｍ〜
１０ｎｍで、抵抗率は１０6Ω・ｃｍであった。こうし
て作製した表面弾性波フィルターの周波数特性を測定し
たところ、１次モードの表面弾性波によるフィルターの
特性は中心周波数：１ＧＨｚのバンドパスフィルターの
特性を示し、中心周波数での挿入損失は１０ｄＢであっ
た。The c-axis orientation of this ZnO film is as good as σ = 1.0 degree, the grain size is 10 nm, and the surface flatness is from several nm to several nm.
At 10 nm, the resistivity was 10 6 Ω · cm. When the frequency characteristics of the surface acoustic wave filter thus manufactured were measured, the characteristics of the filter due to the surface acoustic wave of the first mode showed the characteristics of a bandpass filter with a center frequency of 1 GHz, and the insertion loss at the center frequency was 10 dB. It was
【００１６】［比較例］比較実験としてＲＦスパッタリ
ング法によりＺｎＯ膜を形成し、同様の構造を有する表
面弾性波フィルターを作製した。スパッタリング条件
は、ＲＦパワー：１５０Ｗ、ガス：Ａｒ５０％酸素５０
％、圧力：１．３Ｐａ、基板温度３００℃、ターゲット
材料：ＺｎＯ＋１％Ｌｉ2ＣＯ3のセラミックスであっ
た。このＺｎＯのｃ軸配向性はσ＝２．５度、粒径は５
０ｎｍ、表面平坦性は約３０ｎｍ、抵抗率は１０6Ω・
ｃｍであった。この表面弾性波フィルターの周波数特性
は、中心周波数１ＧＨｚ、挿入損失は２５ｄＢであっ
た。Comparative Example As a comparative experiment, a ZnO film was formed by the RF sputtering method, and a surface acoustic wave filter having the same structure was produced. The sputtering conditions are RF power: 150 W, gas: Ar 50% oxygen 50.
%, Pressure: 1.3 Pa, substrate temperature 300 ° C., target material: ZnO + 1% Li 2 CO 3 ceramics. The c-axis orientation of this ZnO is σ = 2.5 degrees, and the grain size is 5.
0 nm, surface flatness about 30 nm, resistivity 10 6 Ω ・
It was cm. The frequency characteristics of this surface acoustic wave filter were a center frequency of 1 GHz and an insertion loss of 25 dB.
【００１７】ＥＣＲスパッタリング法による膜成長にお
いて、実施例ではスパッタリングガスとして酸素を用い
たが、酸素の他にＨｅ、Ｎｅ、Ａｒ、Ｋｒ、Ｘｅ、およ
び窒素の中から選んだ１種あるいは２種以上の混合ガス
でも良好な結果を得ることが出来る。また、ターゲット
材料には実施例の金属Ｚｎの他にＺｎＯターゲットも使
用できる。ＥＣＲスパッタリングの装置は、基本形の他
に磁界分布制御形、マイクロ波垂直入射形、電界ミラー
形などがあるが（例えば雑誌「電子材料」１９９０年３
月号、８２ページ、著者小野俊郎、五十嵐賢）、いずれ
のものでも同様の結果が得られる。In the film growth by the ECR sputtering method, oxygen was used as the sputtering gas in the examples, but one or more selected from oxygen, He, Ne, Ar, Kr, Xe, and nitrogen. Good results can be obtained with the mixed gas of. Further, as the target material, a ZnO target can be used in addition to the metallic Zn of the embodiment. In addition to the basic type, the ECR sputtering apparatus includes a magnetic field distribution control type, a microwave vertical incidence type, an electric field mirror type, etc. (for example, "Electronic Materials" 1990 March.
Monthly issue, page 82, author Toshiro Ono, Ken Igarashi).
【００１８】圧電体材料についてはＺｎＯ以外に、例え
ばＡｌＮ、Ｐｂ（Ｚｒ、Ｔｉ）Ｏ3、（Ｐｂ、Ｌａ）
（Ｚｒ、Ｔｉ）Ｏ3、ＬｉＴａＯ3、ＬｉＮｂＯ3、Ｓｉ
Ｏ2、Ｔａ2Ｏ5、Ｎｂ2Ｏ5、ＢｅＯ、Ｌｉ2Ｂ4Ｏ7、ＫＮ
ｂＯ3、ＺｎＳ、ＺｎＳｅ、ＣｄＳを使用しても同様の
効果が得られる。また以上のことは図２に示したいずれ
の電極配置構造の場合にも同様に有効である。As for the piezoelectric material, other than ZnO, for example, AlN, Pb (Zr, Ti) O 3 , (Pb, La) are used.
(Zr, Ti) O 3 , LiTaO 3 , LiNbO 3 , Si
O 2 , Ta 2 O 5 , Nb 2 O 5 , BeO, Li 2 B 4 O 7 , KN
Similar effects can be obtained by using bO 3 , ZnS, ZnSe, and CdS. Further, the above is also effective for any of the electrode arrangement structures shown in FIG.
【発明の効果】本発明によれば、ＧＨｚ帯において挿入
損失が少ない表面弾性波素子が得られ、数１００ＭＨｚ
からＧＨｚ帯で特性の優れた周波数フィルター、共振
子、遅延線、コンボルバー、コリレーター等が実現でき
る。According to the present invention, a surface acoustic wave device having a small insertion loss in the GHz band can be obtained, and the surface acoustic wave device has a frequency of several hundred MHz
Can realize frequency filters, resonators, delay lines, convolvers, correlators, etc. with excellent characteristics in the GHz band.
【図１】本発明の表面弾性波素子の断面構造を示す模式
図である。FIG. 1 is a schematic diagram showing a cross-sectional structure of a surface acoustic wave device of the present invention.
【図２】表面弾性波素子の電極配置構造を示す模式平面
図である。FIG. 2 is a schematic plan view showing an electrode arrangement structure of a surface acoustic wave device.
１：Ｓｉ基板 ２：ダイヤモンド層 ３：櫛型電極 ４：ＺｎＯ膜 1: Si substrate 2: Diamond layer 3: Comb type electrode 4: ZnO film
Claims (1)
てなる表面弾性波素子においてＥＣＲスパッタリング法
により圧電体層を形成したことを特徴とする表面弾性波
素子。1. A surface acoustic wave device comprising a diamond, a piezoelectric layer, and electrodes laminated on each other, wherein the piezoelectric layer is formed by an ECR sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21503591A JPH0555854A (en) | 1991-08-27 | 1991-08-27 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21503591A JPH0555854A (en) | 1991-08-27 | 1991-08-27 | Surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0555854A true JPH0555854A (en) | 1993-03-05 |
Family
ID=16665678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21503591A Pending JPH0555854A (en) | 1991-08-27 | 1991-08-27 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0555854A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100343949B1 (en) * | 2000-01-26 | 2002-07-24 | 한국과학기술연구원 | METHOD FOR FABRICATING ZnO THIN FILM FOR ULTRAVIOLET DETECTION AND EMISSION SOURCE OPERATED AT ROOM TEMPERATURE, AND APPARATUS THEREFOR |
| GB2382460A (en) * | 2001-10-17 | 2003-05-28 | Murata Manufacturing Co | Forming a moisture-proof layer on a surface acoustic wave device |
-
1991
- 1991-08-27 JP JP21503591A patent/JPH0555854A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100343949B1 (en) * | 2000-01-26 | 2002-07-24 | 한국과학기술연구원 | METHOD FOR FABRICATING ZnO THIN FILM FOR ULTRAVIOLET DETECTION AND EMISSION SOURCE OPERATED AT ROOM TEMPERATURE, AND APPARATUS THEREFOR |
| GB2382460A (en) * | 2001-10-17 | 2003-05-28 | Murata Manufacturing Co | Forming a moisture-proof layer on a surface acoustic wave device |
| GB2382460B (en) * | 2001-10-17 | 2004-01-07 | Murata Manufacturing Co | Surface acoustic wave device and method of producing the same |
| US6831340B2 (en) | 2001-10-17 | 2004-12-14 | Murata Manufacturing Co., Ltd. | Surface acoustic wave device and method of producing the same |
| KR100467180B1 (en) * | 2001-10-17 | 2005-01-24 | 가부시키가이샤 무라타 세이사쿠쇼 | Surface acoustic wave device and method of producing the same |
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