JPH0556018B2 - - Google Patents

Info

Publication number
JPH0556018B2
JPH0556018B2 JP58075600A JP7560083A JPH0556018B2 JP H0556018 B2 JPH0556018 B2 JP H0556018B2 JP 58075600 A JP58075600 A JP 58075600A JP 7560083 A JP7560083 A JP 7560083A JP H0556018 B2 JPH0556018 B2 JP H0556018B2
Authority
JP
Japan
Prior art keywords
resin
type phenolic
epoxy resin
minutes
phenolic resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58075600A
Other languages
Japanese (ja)
Other versions
JPS59200443A (en
Inventor
Takashi Urano
Etsuji Kubo
Shinsuke Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP58075600A priority Critical patent/JPS59200443A/en
Publication of JPS59200443A publication Critical patent/JPS59200443A/en
Publication of JPH0556018B2 publication Critical patent/JPH0556018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は硬化剤としてレゾール型フエノール系
樹脂を用いた半導体封止用エポキシ樹脂組成物に
係るものである。半導体封止材料としてエポキシ
樹脂と硬化剤としてノボラツク型フエノール系樹
脂とを無触媒あるいは硬化促進剤として第3級ア
ミン類、イミダゾール類、第4級アンモニウム塩
あるいは有機金属塩を配合したものが知られてい
る。半導体封止材料としては信頼性特に耐湿性の
高い樹脂組成物が要求されているがこれまでは耐
湿性の点でエポキシ樹脂の硬化剤としてはノボラ
ツク型フエノール系樹脂が一般に使用されてき
た。この理由は、酸無水物硬化に比べて吸湿劣化
が小さくしかも製造作業性、成形性に優れている
ためである。 しかしながらより信頼性の高い樹脂組成物が要
求されている昨今では、従来のノボラツク型フエ
ノール系樹脂をそのまま用いることができず洗浄
等の工程を加えた後使用しているのが現状であ
る。これは樹脂材料中のイオン性不純物をできる
かぎり抑えるためであり、ノボラツク系フエノー
ル樹脂の合成中に使用される塩酸、硫酸もしくは
蓚酸等の触媒残留物を除去するためである。この
ためノボラツク型フエノール系樹脂の使用はコス
トの点でも非常に不利になつてきている。 本発明は以上の点に鑑みなされたものでありエ
ポキシ樹脂に硬化剤としてレゾール型フエノール
系樹脂を配合したことを特徴とし、耐湿性、信頼
性に優れた半導体封止用エポキシ樹脂組成物を提
供するものである。 レゾール型フエノール系樹脂の合成には、アン
モニア、消石灰などのアルカリ触媒を用いるため
樹脂組成物を製造した場合、ノボラツク型フエノ
ール系樹脂を使用した樹脂組成物が酸性となるの
に比べて中性〜弱アルカリ性となり、半導体装置
のアルミニウム配線の腐食に対して有利になる。
しかもレゾール型フエノール系樹脂はその構造に
水酸基、メチロール基を有しているためエポキシ
樹脂の硬化剤であると同時に、樹脂それ自信が自
硬化する。それ故ノボラツク型フエノール系樹脂
を使用した場合に比べて、未反応物が極端に少な
くなる。そしてこれらの理由により耐湿性、信頼
性が向上する。 また本発明においてはレゾール型フエノール系
樹脂の分子量は800以上のものを5〜25重量%含
むものが好ましい。これ以下の場合硬化性、耐熱
性が低下する。 本発明に適用できるレゾール型フエノール系樹
脂としてはアルキル基などの置換基を有さない一
価フエノールとホルムアルデヒドとをアルカリ性
触媒下で反応することにより得られる縮合生成物
が用いられ、得られるレゾール型樹脂の分子量を
調整する方法は、上記フエノール類とホルムアル
デヒドのモル比と使用する触媒種と量によりコン
トロールが可能である。また使用できる触媒とし
ては、アンモニア、消石灰、苛性カリなどの一般
アルカリもしくはこれら金属塩もしくはこれら二
種以上を併用することができる。合成条件は、触
媒種、触媒量、モル比等により異なるため一概に
決定できないが、縮合生成物の判定は液体クロマ
トグラフイにより容易に行われ所望のレゾール型
フエノール系樹脂が得られる。 レゾール型フエノール系樹脂はエポキシ樹脂に
対して0.6〜1.3当量配合するのが好ましい。 本発明に適用できるエポキシ樹脂としては1分
子内に2ケ以上のエポキシ基を含む既に公知のエ
ポキシ樹脂全般を意味するものであり、例えばビ
スフエノールAとエピクロリヒドリンとから得ら
れるビスフエノール系エポキシ樹脂、ノボラツク
樹脂にエピクロルヒドリンを反応させて得られる
ノボラツク系エポキシ樹脂、シクロヘキセン、シ
クロペンタジエン、ジシクロペンタジエンのよう
な脂環式化合物から得られるエポキシ樹脂、ビニ
ルポリマーから得られるエポキシ樹脂、グリセリ
ンのような多価アルコールから得られるエポキシ
樹脂などがあり、これらの少なくとも一種が用い
られる。 本発明のエポキシ樹脂組成物には、前述したエ
ポキシ樹脂、レゾール型フエノール系樹脂の他
に、必要に応じ組成物全体に対して40〜70容量%
のシリカガラス繊維、アルミナ等の無機質充填剤
が配合される。 さらに、必要に応じて、触媒、離型剤、顔料、
表面処理剤、可撓化剤などを配合することも可能
である。触媒としてはペンジルジメチルアミンな
どの3級アミン、イミダゾール等が表面処理剤と
してはエポキシシランが好ましい。 本発明のエポキシ樹脂組成物の製造法は該エポ
キシ樹脂およびレゾール型フエノール系樹脂と必
要に応じて上記充填剤、触媒などの添加物を混合
しニーダー、擂かい機、一軸もしくは二軸の混練
押出機を用いて混合する。使用する樹脂の軟化点
におうじて加熱加温を行なうが、その温度は100
℃を超えないことが望ましい。 以下本発明について実施例に従がい説明する
が、本発明を何ら制限するものではない。尚、以
下各列中に部とあるのは重量部を意味する。 実施例1および比較例1 ホルムアルデヒド、フエノールをモル比1.08、
25%アンモニア水溶液を触媒としてフラスコでか
きまぜながら温度をあけ、還流しながら90℃で
120分反応させてその後液温を70℃に下げて減圧
濃縮を120分行なつた。その後常圧に戻し、105℃
で15分濃縮させてレゾール型フエノール樹脂(A)を
得た。得られたレゾール型フエノール樹脂(A)の分
子量分布の判定には、東洋ソーダ社製の液体クロ
マトグラフイ(H.L.C)を使用し、カラム
G3000HとG2000Hを組み合わせてその存在量を
測定した。 上記レゾール型ウヘノール樹脂(A)に対して比較
としてホルムアルデヒド、フエノールをモル比
1.2、苛性ソーダを触媒として94℃で110分反応さ
せその後液温を65℃に下げて減圧濃縮を110分行
なつた。その後常圧に戻し、105℃で20分濃縮し
てレゾール型フエノール樹脂(B)を得た。得られた
フエノール樹脂(A)、(B)の分子量を調べると樹脂(A)
には分子量800以上のものがほぼ7〜10%含まれ
ており、樹脂(B)は800以上が2〜3%であつた。 得られた各レゾール型フエノール樹脂(A)、(B)30
部エピコート1011(シエル製ビスフエノール型エ
ポキシ樹脂商品名)100部、イミダゾールC11Z
(四国化成社製)1部、メタノール80部を加えビ
ーカーで撹拌して、完全に溶解させて樹脂組成物
〔〕、〔〕を作成した。樹脂組成物〔〕はレ
ゾール型フエノール樹脂(A)を(実施例1)、〔〕
はレゾール型フエノール樹脂(B)を(比較例1)使
用している。これら樹脂組成物〔〕、〔〕の特
性を表−1に示す。表−1においてゲルタイム
は、JIS・C2104に規定されている熱板を用い150
℃で流動性がなくなる時間で判定した。硬度、二
次転移点の試料は、85℃で30分、110℃で20分乾
燥し、これを150℃で30分加圧成形(圧力70Kg/
cm2)して硬化物を作成した。硬度の判定はシヨア
Dを用い、二次転移点はT.M.A(Thermal
Mechanical Analgsis)を用いた。抽出液の作成
は上記硬化物を粉砕し121℃、2気圧下で蒸溜水
により抽出した。 樹脂組成物〔〕は、硬度、二次転移点が
〔〕に比べて高くしかも抽出水溶液の結果も良
好である。 比較例 2 ホルマリン、フエノールをモル比0.79、塩酸、
蓚酸を触媒としフラスコで撹拌しながら80℃で90
分、100℃で60分各還流下で反応させ、その後減
圧下で加熱脱水して内容物の温度が130℃に達し
た自とり出して、ノボラツク型フエノール樹脂(C)
を得た。このフエノール樹脂(C)25部に実施例1お
よび比較例1と同じくエポキシ樹脂エピコート
1001を100部、イミダゾールC11Z 1部、メタノ
ール130部を加えて完全溶解し、樹脂組成物〔〕
…比較例2を作成した。この樹脂組成物〔〕の
特性を表−1に併記する。比較例2の樹脂組成物
〔〕は実施例1に比べてゲルタイムは短かく、
硬度、二次転移点は同等であるが、抽出水のPHが
酸性で電気伝導度も本発明品(実施例1)の約2
倍となつている。 実施例1および比較例1〜2の樹脂組成物
〔〕〜〔〕を用いて、テストチツプ(アルミ
配線パターンを形成したもの)を封止し、その信
頼性を評価した。成形にあつてはテストチツプの
上に直接滴下し、1mmの厚みを作成して85℃で30
分、110℃で20分乾燥後、常圧150℃で30分硬化し
た。これらを121℃、2気圧水蒸気下で放置し配
線の腐食レベルを試験した。結果を表−2に示
す。 表−2の結果より、本発明の実施例1は耐湿性
試験に対しても極めて強いことがわかる。 実施例2及び比較例3 実施例1において作成したレゾール型フエノー
ル樹脂(A)45部に、EocN102(日本化薬社製ノボラ
ツク型エポキシ樹脂商品名)100部触媒イミダゾ
ールC17Z 1.5部、シリカ粉末300部、カルナバワ
ツクス2部を加え、加圧ニーダで60℃20分間混練
を行ない半固型のエポキシ樹脂組成物〔〕(実
施例2)を作成した。比較例2で作成したノボラ
ツク型フエノール樹脂(C)45部に、実施例2で用い
た同一各素材を添加した後、60〜80℃の加熱ロー
ルで6〜7分混練し冷却・粉砕してエポキシ樹脂
組成物〔〕(比較例3)を作成した。これらエ
ポキシ樹脂組成物〔〕、〔〕を、170℃〜180℃
で2分、圧力70Kg/cm2で成形し、その信頼性を実
施例1と同じくテストチツプで評価した。結果を
表−3に示す。試験方法は121℃2気圧水蒸気下
での放置である。 表−3の結果より本発明のエポキシ樹脂組成物
によつて封止された半導体装置は表−2の結果と
同様耐湿試験に極めて良好であることがわかる。
The present invention relates to an epoxy resin composition for semiconductor encapsulation using a resol type phenolic resin as a curing agent. As a semiconductor sealing material, there are known compounds in which an epoxy resin and a novolak type phenolic resin are used as a curing agent without a catalyst or with tertiary amines, imidazoles, quaternary ammonium salts, or organic metal salts as a curing accelerator. ing. Resin compositions with high reliability, particularly moisture resistance, are required for semiconductor encapsulation materials, and up to now, novolak type phenolic resins have been generally used as curing agents for epoxy resins due to their moisture resistance. The reason for this is that compared to acid anhydride curing, deterioration due to moisture absorption is small and production workability and moldability are excellent. However, in recent years, there is a demand for more reliable resin compositions, and conventional novolac type phenolic resins cannot be used as they are, but are currently used after adding processes such as washing. This is to suppress ionic impurities in the resin material as much as possible, and to remove catalyst residues such as hydrochloric acid, sulfuric acid or oxalic acid used during the synthesis of novolak phenolic resin. For this reason, the use of novolak type phenolic resins has become very disadvantageous in terms of cost. The present invention has been made in view of the above points, and provides an epoxy resin composition for semiconductor encapsulation that is characterized by blending a resol type phenolic resin as a curing agent with an epoxy resin, and has excellent moisture resistance and reliability. It is something to do. Because alkali catalysts such as ammonia and slaked lime are used to synthesize resol-type phenolic resins, when the resin composition is manufactured, it is neutral to acidic compared to the acidic resin composition using novolac-type phenolic resin. It becomes weakly alkaline and is advantageous against corrosion of aluminum wiring in semiconductor devices.
Furthermore, since the resol type phenolic resin has a hydroxyl group and a methylol group in its structure, it is a curing agent for epoxy resin, and at the same time, the resin itself cures itself. Therefore, the amount of unreacted substances is extremely reduced compared to when a novolak type phenolic resin is used. For these reasons, moisture resistance and reliability are improved. Further, in the present invention, it is preferable that the resol type phenolic resin contains 5 to 25% by weight of a resin having a molecular weight of 800 or more. If it is less than this, curability and heat resistance will decrease. As the resol-type phenolic resin that can be applied to the present invention, a condensation product obtained by reacting a monovalent phenol without a substituent such as an alkyl group with formaldehyde under an alkaline catalyst is used, and the resulting resol-type phenolic resin is used. The method for adjusting the molecular weight of the resin can be controlled by the molar ratio of the phenols and formaldehyde and the type and amount of the catalyst used. Further, as catalysts that can be used, general alkalis such as ammonia, slaked lime, and caustic potash, metal salts thereof, or two or more thereof can be used in combination. Synthesis conditions cannot be determined unconditionally because they vary depending on the catalyst species, catalyst amount, molar ratio, etc., but the condensation product can be easily determined by liquid chromatography, and the desired resol type phenolic resin can be obtained. It is preferable that the resol type phenolic resin is blended in an amount of 0.6 to 1.3 equivalents to the epoxy resin. The epoxy resin applicable to the present invention refers to all known epoxy resins containing two or more epoxy groups in one molecule, such as bisphenol-based epoxy resins obtained from bisphenol A and epichlorohydrin. Epoxy resin, novolac type epoxy resin obtained by reacting novolac resin with epichlorohydrin, epoxy resin obtained from alicyclic compounds such as cyclohexene, cyclopentadiene, and dicyclopentadiene, epoxy resin obtained from vinyl polymer, glycerin, etc. There are epoxy resins obtained from polyhydric alcohols, and at least one of these is used. In addition to the above-mentioned epoxy resin and resol-type phenolic resin, the epoxy resin composition of the present invention may contain 40 to 70% by volume of the entire composition, if necessary.
Inorganic fillers such as silica glass fiber and alumina are blended. Furthermore, if necessary, catalysts, mold release agents, pigments,
It is also possible to blend a surface treatment agent, a flexibilizing agent, etc. The catalyst is preferably a tertiary amine such as penzyldimethylamine, imidazole, etc., and the surface treatment agent is preferably epoxysilane. The method for producing the epoxy resin composition of the present invention is to mix the epoxy resin and resol type phenolic resin with additives such as the above-mentioned fillers and catalysts as necessary, and then knead and extrude using a kneader, a grinder, or a single or twin screw. Mix using a machine. Heating is performed until the softening point of the resin used is reached, but the temperature is 100°C.
It is desirable not to exceed ℃. The present invention will be explained below according to examples, but the present invention is not limited in any way. Note that parts in each column hereinafter mean parts by weight. Example 1 and Comparative Example 1 Formaldehyde and phenol in a molar ratio of 1.08,
Using a 25% ammonia aqueous solution as a catalyst, stir in a flask to warm up the temperature, then heat to 90°C while refluxing.
After reacting for 120 minutes, the liquid temperature was lowered to 70°C and concentration under reduced pressure was performed for 120 minutes. After that, return to normal pressure and raise to 105℃.
The mixture was concentrated for 15 minutes to obtain a resol type phenolic resin (A). To determine the molecular weight distribution of the obtained resol type phenolic resin (A), liquid chromatography (HLC) manufactured by Toyo Soda Co., Ltd. was used.
We measured the abundance of G3000H and G2000H in combination. For comparison, the molar ratio of formaldehyde and phenol to the above resol type uhenol resin (A)
1.2. The reaction was carried out at 94°C for 110 minutes using caustic soda as a catalyst, and then the liquid temperature was lowered to 65°C and concentrated under reduced pressure for 110 minutes. Thereafter, the pressure was returned to normal, and the mixture was concentrated at 105°C for 20 minutes to obtain a resol type phenolic resin (B). When the molecular weights of the obtained phenolic resins (A) and (B) were examined, resin (A)
contained approximately 7-10% of molecules with a molecular weight of 800 or higher, and resin (B) contained 2-3% of molecular weights of 800 or higher. Each of the obtained resol type phenolic resins (A) and (B)30
100 parts of Epicote 1011 (trade name of bisphenol type epoxy resin made by Ciel), Imidazole C 11 Z
(manufactured by Shikoku Kasei Co., Ltd.) and 80 parts of methanol were added and stirred in a beaker to completely dissolve the resin compositions [] and []. The resin composition [] is a resol type phenol resin (A) (Example 1), []
uses resol type phenolic resin (B) (Comparative Example 1). The properties of these resin compositions [] and [] are shown in Table 1. In Table 1, the gel time is 150% using a hot plate specified in JIS C2104.
Judgment was made based on the time it takes for fluidity to disappear at °C. Hardness and secondary transition point samples were dried at 85°C for 30 minutes and 110°C for 20 minutes, and then pressure molded at 150°C for 30 minutes (pressure 70 kg/
cm 2 ) to prepare a cured product. The hardness is determined using Shore D, and the secondary transition point is determined using TMA (Thermal
Mechanical Analgsis) was used. To prepare an extract, the cured product was ground and extracted with distilled water at 121°C and 2 atm. Resin composition [] has higher hardness and second-order transition point than [], and also has good results as an aqueous extraction solution. Comparative Example 2 Formalin and phenol in a molar ratio of 0.79, hydrochloric acid,
90°C at 80°C with stirring in a flask using oxalic acid as a catalyst.
The reaction was carried out under reflux for 60 minutes at 100°C, and then heated and dehydrated under reduced pressure until the temperature of the contents reached 130°C.
I got it. 25 parts of this phenol resin (C) was coated with epoxy resin Epicoat as in Example 1 and Comparative Example 1.
Add 100 parts of 1001, 1 part of imidazole C 11 Z, and 130 parts of methanol to completely dissolve and form a resin composition []
...Comparative Example 2 was created. The properties of this resin composition [] are also listed in Table-1. The resin composition of Comparative Example 2 [] had a shorter gel time than that of Example 1,
Although the hardness and secondary transition point are the same, the pH of the extracted water is acidic and the electrical conductivity is about 2 that of the product of the present invention (Example 1).
It has doubled. A test chip (on which an aluminum wiring pattern was formed) was sealed using the resin compositions [] and [] of Example 1 and Comparative Examples 1 and 2, and its reliability was evaluated. For molding, drop it directly onto the test chip to create a thickness of 1 mm and heat it at 85℃ for 30 minutes.
After drying at 110°C for 20 minutes, it was cured at normal pressure at 150°C for 30 minutes. These were left under steam at 121°C and 2 atm, and the corrosion level of the wiring was tested. The results are shown in Table-2. From the results in Table 2, it can be seen that Example 1 of the present invention is extremely resistant to moisture resistance tests. Example 2 and Comparative Example 3 To 45 parts of the resol type phenolic resin (A) prepared in Example 1, 100 parts of EocN102 (trade name of novolac type epoxy resin manufactured by Nippon Kayaku Co., Ltd.), 1.5 parts of catalyst imidazole C 17 Z, and silica powder were added. 300 parts and 2 parts of carnauba wax were added and kneaded in a pressure kneader at 60°C for 20 minutes to prepare a semi-solid epoxy resin composition (Example 2). The same materials used in Example 2 were added to 45 parts of the novolak type phenolic resin (C) prepared in Comparative Example 2, then kneaded for 6 to 7 minutes with heated rolls at 60 to 80°C, cooled, and pulverized. An epoxy resin composition [] (Comparative Example 3) was created. These epoxy resin compositions [], [] were heated at 170°C to 180°C.
It was molded for 2 minutes at a pressure of 70 kg/cm 2 , and its reliability was evaluated using a test chip as in Example 1. The results are shown in Table-3. The test method was to leave the product under 2 atmospheres of water vapor at 121°C. From the results in Table 3, it can be seen that the semiconductor devices sealed with the epoxy resin composition of the present invention are extremely good in the moisture resistance test, similar to the results in Table 2.

【表】【table】

【表】 *1 分子は不良発生数、分母は全個数を示す。
[Table] *1 The numerator indicates the number of defects and the denominator indicates the total number.

【表】 *2 分子は不良発生数、分母は全個数を示す。
以上に示されるように本発明の半導体封止用エ
ポキシ樹脂組成物は耐湿性、信頼性に優れたもの
である。
[Table] *2 The numerator indicates the number of defects, and the denominator indicates the total number.
As shown above, the epoxy resin composition for semiconductor encapsulation of the present invention has excellent moisture resistance and reliability.

Claims (1)

【特許請求の範囲】[Claims] 1 エポキシ樹脂にたいし、置換基を有さない一
価フエノール−ホルムアルデヒド樹脂であつて
800以上の分子量成分を5〜25重量%含有するレ
ゾール型フエノール樹脂を配合してなることを特
徴とする半導体封止用エポキシ樹脂組成物。
1 For epoxy resins, monovalent phenol-formaldehyde resins without substituents
An epoxy resin composition for semiconductor encapsulation, characterized in that it is blended with a resol type phenolic resin containing 5 to 25% by weight of a component with a molecular weight of 800 or more.
JP58075600A 1983-04-27 1983-04-27 Epoxy resin composition for sealing semiconductor Granted JPS59200443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58075600A JPS59200443A (en) 1983-04-27 1983-04-27 Epoxy resin composition for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58075600A JPS59200443A (en) 1983-04-27 1983-04-27 Epoxy resin composition for sealing semiconductor

Publications (2)

Publication Number Publication Date
JPS59200443A JPS59200443A (en) 1984-11-13
JPH0556018B2 true JPH0556018B2 (en) 1993-08-18

Family

ID=13580853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58075600A Granted JPS59200443A (en) 1983-04-27 1983-04-27 Epoxy resin composition for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPS59200443A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152725A (en) * 1984-12-26 1986-07-11 Sumitomo Bakelite Co Ltd Phenolic resin molding material
JP2568584B2 (en) * 1987-10-15 1997-01-08 日東電工株式会社 Semiconductor device

Also Published As

Publication number Publication date
JPS59200443A (en) 1984-11-13

Similar Documents

Publication Publication Date Title
JP5170493B2 (en) Phenol polymer, its production method and its use
US4368299A (en) Epoxy resin compositions
JP4264769B2 (en) Epoxy resin composition and semiconductor sealing material
JPH0556018B2 (en)
JP3915938B2 (en) Epoxy resin composition, method for producing epoxy resin, and semiconductor sealing material
KR0180034B1 (en) Epoxy Resin Composition for Semiconductor Encapsulation
JP3770343B2 (en) Epoxy resin composition and semiconductor sealing material
JPH08100049A (en) Epoxy resin composition for semiconductor encapsulation material
JPH08169939A (en) Epoxy resin composition suitable for semiconductor encapsulation
JP2001064362A (en) Epoxy resin composition and semiconductor device
JPS6181427A (en) Epoxy resin composition
JP3118494B2 (en) Curing agent for epoxy resin and epoxy resin composition
JPH05287053A (en) Epoxy resin, resin composition and cured product
JP3235672B2 (en) Epoxy resin composition for electronic parts
JPH0270721A (en) Epoxy resin compositon for sealing material
JP4639412B2 (en) Epoxy resin composition and semiconductor device
JP2948056B2 (en) Resin composition for semiconductor encapsulation
JPS61221219A (en) Epoxy resin composition for sealing semiconductor device
JPH07216041A (en) Naphthol aldehyde condensate and epoxy resin composition containing the same
JPH07216052A (en) Epoxy resin and epoxy resin composition
JP2005179453A (en) Epoxy resin and method for producing the same
JPH01121354A (en) Epoxy resin composition for sealing material
JPH0337221A (en) Epoxy resin composition for semiconductor sealing
JPS59227873A (en) Preparation of glycidyl ether of polyhydric phenol
JPH05105802A (en) Thermosetting resin composition and cured product thereof