JPH056513A - Thin film magnetic head and method of manufacturing the same - Google Patents
Thin film magnetic head and method of manufacturing the sameInfo
- Publication number
- JPH056513A JPH056513A JP3158556A JP15855691A JPH056513A JP H056513 A JPH056513 A JP H056513A JP 3158556 A JP3158556 A JP 3158556A JP 15855691 A JP15855691 A JP 15855691A JP H056513 A JPH056513 A JP H056513A
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- Prior art keywords
- magnetic
- thin film
- magnetic head
- coil
- gas
- Prior art date
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Abstract
(57)【要約】
【目的】 高密度記憶装置のハードディスクを構成する
ための薄膜磁気ヘッドの電磁変換特性を向上させ、同時
にウイグルまたはポプコンノイズの発生を防止する。
【構成】 薄膜磁気ヘッドの上部および/または下部の
磁性層8,9/3,4を、82.5ないし83.7重量%Niを
含むFe‐Ni系合金により、基板バイアス電位を−25な
いし−250Vとして、バイアススパッタリング法によっ
てArガス中に0.5ないし10.0%のN2ガスを添加したガ
ス中で形成する。
(57) [Abstract] [Purpose] To improve the electromagnetic conversion characteristics of a thin film magnetic head for constituting a hard disk of a high density storage device, and at the same time prevent generation of wiggle or popcon noise. The magnetic layers 8, 9/3, and 4 above and / or below the thin-film magnetic head are made of Fe-Ni-based alloy containing 82.5 to 83.7 wt% Ni, and the substrate bias potential is -25 to -250V. It is formed by a bias sputtering method in a gas in which 0.5 to 10.0% of N 2 gas is added to Ar gas.
Description
【0001】[0001]
【産業上の利用分野】本発明は高密度記憶装置であるハ
ードディスク(以下、HDという)に用いる薄膜磁気ヘッ
ドおよびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used for a hard disk (hereinafter referred to as HD) which is a high density storage device and a method for manufacturing the same.
【0002】[0002]
【従来の技術】HDに用いる薄膜磁気ヘッドは、磁気デ
ィスクの磁気記録密度を高くするため薄膜技術によって
形成され、通常、セラミック基板上の下部磁性層と上部
磁性層との間に、磁気ギャップを有する、上部および下
部の磁性層と両磁性層間を通り磁気回路と交差する所定
巻数のコイルを形成する銅膜と、コイル相互間および、
コイルと上部,下部磁性層間を電気的に絶縁する絶縁層
を積層して構成される。2. Description of the Related Art A thin film magnetic head used for HD is formed by a thin film technique in order to increase the magnetic recording density of a magnetic disk. Usually, a magnetic gap is formed between a lower magnetic layer and an upper magnetic layer on a ceramic substrate. And a copper film forming a coil of a predetermined number of turns that crosses the magnetic circuit through the upper and lower magnetic layers and both magnetic layers, and between the coils,
It is composed by stacking an insulating layer that electrically insulates the coil from the upper and lower magnetic layers.
【0003】図3は上記のように構成した薄膜磁気ヘッ
ドによりトランスデューサ素子11を形成した従来のHD
用薄膜磁気ヘッドの外観を示した斜視図である。なお、
12はスライダ面である。FIG. 3 shows a conventional HD in which a transducer element 11 is formed by the thin film magnetic head having the above-mentioned structure.
FIG. 3 is a perspective view showing the outer appearance of a thin-film magnetic head for a magnetic disk. In addition,
12 is a slider surface.
【0004】薄膜磁気ヘッドの電磁変換特性は、ヘッド
コアを構成する磁性膜の磁気特性に大きく依存し、薄膜
磁気ヘッドが使用されるのは一般に、数MHzから数十
MHzの高周波領域であるため、この周波数領域での磁
気特性が重要となってくる。特に、ヘッドコアの磁路方
向の透磁率は薄膜磁気ヘッドの電磁変換特性に大きく影
響する。The electromagnetic conversion characteristics of the thin film magnetic head greatly depend on the magnetic characteristics of the magnetic film forming the head core, and the thin film magnetic head is generally used in a high frequency range of several MHz to several tens of MHz. The magnetic characteristics in this frequency region become important. In particular, the magnetic permeability of the head core in the magnetic path direction greatly affects the electromagnetic conversion characteristics of the thin film magnetic head.
【0005】そのため、薄膜磁気ヘッドではトラック幅
方向が磁化容易軸となるように、磁性膜に単軸磁気異方
性を付与している。従って、トラック方向は磁化困難軸
となり励磁時の磁化反転は磁化回転により行われ、磁壁
移動により行なわれる磁化反転よりも高速となる。Therefore, in the thin film magnetic head, uniaxial magnetic anisotropy is imparted to the magnetic film so that the easy axis of magnetization is in the track width direction. Therefore, the track direction becomes the hard axis of magnetization, and the magnetization reversal at the time of excitation is performed by the magnetization rotation, which is faster than the magnetization reversal performed by the domain wall movement.
【0006】また、薄膜磁気ヘッドの大きな課題として
“ウイグル”及び“ポプコンノイズ”等の問題がある。Further, as a major problem of the thin film magnetic head, there are problems such as "wiggle" and "popcon noise".
【0007】ウイグルは再生波形に波形ひずみが発生す
る現象であり、1979年IBMのJonesにより初めて
報告された。このウイグル現象は固定磁気ディスク装置
において信号読み取りエラーを引き起こす要因となる。
これは、読み出し時の出力に時間的遅れ成分、及び変動
を伴うことがその発生の主な原因とされている。Uighur is a phenomenon in which waveform distortion occurs in a reproduced waveform, and was first reported by Jones of IBM in 1979. This wiggle phenomenon causes a signal reading error in the fixed magnetic disk device.
This is due to the fact that the output at the time of reading is accompanied by a time delay component and fluctuations.
【0008】時間的遅れ成分が発生する原因は、高周波
駆動時における磁化反転が全て磁化回転によって行なわ
れず、磁壁移動によって行なわれる成分が存在するため
であると考えられる。それを避けるため磁化反転の成分
を全て磁化回転のみによって行なわせるには、磁壁が高
周波励磁により容易に動かないように固定する必要があ
る。It is considered that the cause of the time delay component is that the magnetization reversal at the time of high frequency driving is not entirely performed by the magnetization rotation, but there is a component caused by the domain wall movement. In order to avoid this, all the magnetization reversal components are performed only by the magnetization rotation, it is necessary to fix the domain wall so as not to easily move by high frequency excitation.
【0009】磁壁が高周波励磁により容易に移動しない
ように固定するために、磁性層のコアのエッジにくさび
形の切込みを入れたり、コアの表面に磁化容易軸に平行
に溝を形成したり、コアの形状を野球のホームベース状
にするなどの試みが成されている。In order to fix the domain wall so as not to move easily by high-frequency excitation, a wedge-shaped cut is formed in the edge of the core of the magnetic layer, or a groove is formed on the surface of the core parallel to the easy axis of magnetization. Attempts have been made to make the core shape like a baseball home base.
【0010】しかし、これらの方法に拠っても完全に磁
壁の移動を固定することは困難であり、また、くさび形
の切込みやコア表面の溝は磁性層の実効透磁率を低下さ
せる原因となる。However, even if these methods are used, it is difficult to completely fix the movement of the domain wall, and the wedge-shaped notch or the groove on the core surface causes a decrease in the effective magnetic permeability of the magnetic layer. .
【0011】また、磁性膜の磁歪が大きい場合、磁性膜
自身や磁性膜に加わる応力によって磁化が変化し磁壁が
不安定になりウイグルが発生する。これを防止するため
に磁性膜の磁歪を負にしたり、磁歪の絶対値を小さくす
る試みが成されている。磁歪の値を制御するには磁性膜
の組成を制御する方法と、磁性膜の結晶構造を制御する
方法とがある。When the magnetostriction of the magnetic film is large, the magnetization is changed by the stress applied to the magnetic film itself or the magnetic film, the domain wall becomes unstable, and wiggle occurs. In order to prevent this, attempts have been made to make the magnetostriction of the magnetic film negative or to reduce the absolute value of the magnetostriction. To control the value of magnetostriction, there are a method of controlling the composition of the magnetic film and a method of controlling the crystal structure of the magnetic film.
【0012】磁歪を1×10~6以下に制御するためにはパ
ーマロイ(Fe‐Ni)の場合、組成を±0.2重量%に制御
しなければ成らない。また、磁歪が1×10~6以下に入る
組成は結晶構造により変化するので、組成と結晶構造の
両方を制御する必要がある。しかし、これらの方法によ
ってもウイグルを完全に無くすことは困難である。In order to control the magnetostriction to 1 × 10 6 or less, in the case of permalloy (Fe-Ni), the composition must be controlled to ± 0.2% by weight. Further, the composition in which the magnetostriction falls within 1 × 10 6 or less changes depending on the crystal structure, so it is necessary to control both the composition and the crystal structure. However, even with these methods, it is difficult to completely eliminate wiggle.
【0013】また、ポプコンノイズはデータを書き込ん
で直ちにデータを読み込む時に発生するスパイク状のノ
イズである。セクターサーボ方式の固定ディスク装置で
は読み込みエラーの発生原因となる。これは、書き込み
電流によって励磁された磁壁が緩和過程で何等かの原因
でピンニングされ、その後遅れて緩和状態に戻る時に観
測されるノイズであると考えられる。Popcon noise is spike-like noise that occurs when data is written and data is immediately read. This may cause a read error in a sector servo type fixed disk device. This is considered to be noise observed when the domain wall excited by the write current is pinned for some reason during the relaxation process and then returns to the relaxation state after a delay.
【0014】磁壁がピンニングされる原因としては磁性
層の磁歪が大な場合、書き込み時の発生磁界やコイルの
発熱による絶縁層の膨張で磁性層に対して外部応力がか
かり、磁壁を拘束することが考えられる。As a cause of pinning the domain wall, when the magnetic layer has a large magnetostriction, an external stress is applied to the magnetic layer due to expansion of the insulating layer due to a magnetic field generated during writing or heat generation of the coil, and the domain wall is restricted. Can be considered.
【0015】ポプコンノイズの対策としては磁性層の磁
歪を絶縁値で5×10~7以下にしたり1×10~6以下の負の
磁歪に設定したりする方法や、コイルの比抵抗を小さく
したり断面積を大きくすることによりコイルの抵抗を小
さくして、発熱を抑える方法が試みられている。As a countermeasure against popcon noise, the method of setting the magnetostriction of the magnetic layer to an insulation value of 5 × 10 to 7 or less or 1 × 10 to 6 or less of negative magnetostriction, or reducing the specific resistance of the coil is used. Alternatively, a method of suppressing heat generation by reducing the resistance of the coil by increasing the cross-sectional area has been attempted.
【0016】しかしながら、前述したように磁性層の磁
歪を1×10~6以下に制御するためにはパーマロイ(Fe‐
Ni)の場合、組成を±0.2重量%に制御しなければ成ら
ない。また、コイルの比抵抗を小さくしたり断面積を大
きくすることも技術的に限界がある。However, as described above, in order to control the magnetostriction of the magnetic layer to 1 × 10 to 6 or less, permalloy (Fe-
In the case of Ni), the composition must be controlled to ± 0.2% by weight. There is also a technical limit to reducing the specific resistance of the coil and increasing the cross-sectional area.
【0017】[0017]
【発明が解決しようとする課題】本発明は、高密度記憶
装置であるHDに用いる薄膜磁気ヘッドにおける上述の
ような諸問題を解決して電磁変換特性にすぐれ、ウイグ
ル及びポプコンノイズなどのノイズを無くした薄膜磁気
ヘッド、及びその製造方法の提供を目的とするものであ
る。SUMMARY OF THE INVENTION The present invention solves the problems described above in a thin film magnetic head used for HD which is a high-density storage device, has excellent electromagnetic conversion characteristics, and eliminates noise such as wiggle and popcon noise. It is an object of the present invention to provide a thin film magnetic head that has been lost and a method for manufacturing the same.
【0018】[0018]
【課題を解決するための手段】本発明は、薄膜磁気ヘッ
ドにおいて、少なくとも磁性層として、82.5ないし83.7
重量%Niを含むFe‐Ni系合金を使用し、Hkが4か
ら8 Oeの間にあり、内部応力が引張り応力で、応力の
大きさが5×108ないし1×1010dyn/cm2である材料を使
用し実効的異方性を制御する。According to the present invention, in a thin film magnetic head, at least 82.5 to 83.7 are provided as magnetic layers.
Fe-Ni alloy containing Ni by weight is used, Hk is between 4 and 8 Oe, internal stress is tensile stress, and stress magnitude is 5 × 10 8 to 1 × 10 10 dyn / cm 2 The effective anisotropy is controlled using a material that is
【0019】[0019]
【作用】本発明によれば、少なくとも磁性層に、82.5な
いし83.7重量%Niを含むFe‐Ni系合金を使用し、H
kが4から8Oeの間にあるようにし、内部応力が引張り
応力で、応力の大きさが5×108ないし1×1010dyn/cm2
である材料を使用し実効的異方性を制御することによ
り、ウイグル及びポプコンノイズなどのノイズを発生し
ないハードディスクに用いられる薄膜磁気ヘッドを作成
することができる。According to the present invention, a Fe-Ni alloy containing 82.5 to 83.7 wt% Ni is used for at least the magnetic layer, and H
k is between 4 and 8 Oe, the internal stress is tensile stress, and the magnitude of stress is 5 × 10 8 to 1 × 10 10 dyn / cm 2
By controlling the effective anisotropy by using the material, a thin film magnetic head used for a hard disk that does not generate noise such as Uighur and Popcon noise can be created.
【0020】[0020]
【実施例】図1は本発明の一実施例を説明する薄膜磁気
ヘッドの積層断面図である。以下、この図を用いて本発
明の薄膜磁気ヘッド及びその製造方法の詳細を説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view of a thin film magnetic head for explaining an embodiment of the present invention. Hereinafter, the details of the thin film magnetic head of the present invention and the manufacturing method thereof will be described with reference to this drawing.
【0021】まずAl2O3‐TiC(アルチック)などの材
料により作成されたセラミック基板1の上に、高周波ス
パッタリングによりAl2O3の下地絶縁層2を10ないし2
0μm形成させ、その上にバイアススパッタリング法によ
り下部磁性層3,4を形成した。In [0021] First Al 2 O 3 -TiC (AlTiC) on the material of the ceramic substrate 1 created by such as 10 to a base insulating layer 2 of Al 2 O 3 by high-frequency sputtering 2
Then, the lower magnetic layers 3 and 4 were formed thereon by a bias sputtering method.
【0022】スパッタリング条件はターゲット組成Fe1
7.5重量%ないしNi82.5重量%、基板温度100℃、スパ
ッタリング時のスパッタリングガスはArガスにN2ガス
5%添加し全ガス圧を4×10~3Torrとした。基板バイア
ス電圧−100V、膜形成速度780Å/minとした。The sputtering conditions are the target composition Fe1.
7.5 wt% to Ni82.5 wt%, the substrate temperature was 100 ° C., and the sputtering gas at the time of sputtering was Ar gas added with 5% of N 2 gas so that the total gas pressure was 4 × 10 3 Torr. The substrate bias voltage was −100 V, and the film formation rate was 780 Å / min.
【0023】このようにして形成された膜の組成を多属
性効用分析機(EPMAU)で分析した結果はFe16.8重
量%ないしNi83.2重量%であった。The composition of the thus formed film was analyzed by a multi-attribute utility analyzer (EPMAU) and the result was 16.8 wt% Fe to 83.2 wt% Ni.
【0024】図2は上述のようにして製造した磁性薄膜
のB−Hカーブを示す図である。測定の結果、Hcは0.8
Oe、Hkは7.5 Oeであった。一般の磁性薄膜のHkは
4 Oe以下になると保護膜の応力等により異方性が崩れ
る原因となる、また、8 Oe以上になると実効透磁率が
下がってくるためヘッドの出力が低下する。従って、H
kは4から8 Oeの間にとるのが適切である。この膜の
磁歪を測定した結果、Ni組成が82.5重量%から83.7重
量%の間で0から−1×10~6であった。FIG. 2 is a diagram showing a BH curve of the magnetic thin film manufactured as described above. As a result of measurement, Hc is 0.8
Oe and Hk were 7.5 Oe. When Hk of a general magnetic thin film is 4 Oe or less, it causes the anisotropy to collapse due to stress of the protective film, and when it is 8 Oe or more, the effective magnetic permeability is lowered and the output of the head is lowered. Therefore, H
Suitably k is between 4 and 8 Oe. As a result of measuring the magnetostriction of this film, the Ni composition was 0 to −1 × 10 6 when the Ni composition was between 82.5 wt% and 83.7 wt%.
【0025】また磁歪が−1×10~6を超えるとウイグル
やポプコンノイズの原因となるためNi組成は82.5重量
%から83.7重量%の間にとる必要がある。この膜の内部
応力を測定した結果、4×109dyn/cm2の引張り応力であ
った。If the magnetostriction exceeds -1 × 10 to 6 , it may cause wiggle or popcon noise. Therefore, the Ni composition should be 82.5 to 83.7% by weight. As a result of measuring the internal stress of this film, the tensile stress was 4 × 10 9 dyn / cm 2 .
【0026】また、応力が1×1010dyn/cm2以上になる
と基板との密着性が低下し、剥離の原因となる5×108d
yn/cm2以下になると実効的異方性が小さくなるためノイ
ズの発生原因となる。Further, when the stress is 1 × 10 10 dyn / cm 2 or more, the adhesion to the substrate is lowered and 5 × 10 8 d which causes peeling.
If it is less than yn / cm 2 , the effective anisotropy becomes small, which causes noise.
【0027】図1に戻り下部磁性層3,4の形成後に、
磁性層とコイル間及びコイル6とコイル7の間を電気絶
縁するためにレジストによる絶縁層5を形成する。この
時レジストは真空で250℃で2時間のベーキングを行な
い完全に硬化させる。Returning to FIG. 1, after forming the lower magnetic layers 3 and 4,
An insulating layer 5 made of a resist is formed to electrically insulate between the magnetic layer and the coil and between the coil 6 and the coil 7. At this time, the resist is baked in vacuum at 250 ° C. for 2 hours to be completely cured.
【0028】次に、電気メッキ法により第1層目のコイ
ル6を必要ターン数積層する、電気メッキの電極膜とし
てはスパッタリング法による銅薄膜を使用する。メッキ
浴としては硫酸銅浴、ピロリン酸銅浴等が使用できる
が、本発明では硫酸銅浴によりコイルを形成した。Next, the coil 6 of the first layer is laminated by the required number of turns by electroplating, and a copper thin film formed by sputtering is used as an electrode film for electroplating. As the plating bath, a copper sulfate bath, a copper pyrophosphate bath or the like can be used, but in the present invention, the coil was formed by the copper sulfate bath.
【0029】次に、コイル6とコイル7の間の電気絶縁
のためにレジストによる絶縁層5を形成し真空ベーキン
グを行う。この上に、第2層目のコイル7を第1層と同
様な方法で形成する。さらに、コイル7と上部磁性層
8,9の間を電気絶縁するためにレジストによる絶縁層
5を形成し、真空ベーキングを行う。Next, an insulating layer 5 made of a resist is formed for electrical insulation between the coils 6 and 7, and vacuum baking is performed. The second layer coil 7 is formed thereon by the same method as the first layer. Further, an insulating layer 5 made of a resist is formed to electrically insulate the coil 7 from the upper magnetic layers 8 and 9, and vacuum baking is performed.
【0030】次に、上部磁性層8,9を下部磁性層3,
4と同様に形成して磁気回路として、最後に高周波バイ
アススパッタリング法によりAl2O3の保護層10を40な
いし70μm形成した。この後、保護層10の表面を平坦化
し、形状加工により図3のようなスライダチップに構成
する。Next, the upper magnetic layers 8 and 9 are connected to the lower magnetic layers 3 and 3, respectively.
A magnetic circuit was formed in the same manner as in No. 4, and finally a protective layer 10 of Al 2 O 3 was formed by 40 to 70 μm by a high frequency bias sputtering method. Then, the surface of the protective layer 10 is flattened and shaped into a slider chip as shown in FIG.
【0031】[0031]
【発明の効果】以上説明したように本発明によれば高密
度記憶装置であるハードディスクに用いる薄膜磁気ヘッ
ドにおいて、電磁変換特性にすぐれ、ウィグル及びポプ
コンノイズなどのノイズ発生がなくなるので、今後、ま
すます発展する情報分野で記憶装置として本発明の薄膜
磁気ヘッドに用いて大きな効果が得られる。As described above, according to the present invention, in the thin film magnetic head used for a hard disk which is a high-density storage device, the electromagnetic conversion characteristics are excellent, and noises such as wiggle and popcon noise are eliminated. In the information field which is developing more and more, a great effect can be obtained by using the thin film magnetic head of the present invention as a memory device.
【図1】本発明の一実施例を説明する薄膜磁気ヘッドの
積層構造を示す断面図である。FIG. 1 is a sectional view showing a laminated structure of a thin film magnetic head for explaining an embodiment of the invention.
【図2】本発明の磁気膜のB−Hカーブを示す図であ
る。FIG. 2 is a diagram showing a BH curve of the magnetic film of the present invention.
【図3】薄膜磁気ヘッドのスライダチップを示す斜視図
である。FIG. 3 is a perspective view showing a slider chip of a thin film magnetic head.
【符号の説明】
1…セラミッタ基板、 2…下地絶縁層、 3,4…下
部磁性層、 5…絶縁層、 6,7…コイル、 8,9
…上部磁性層、 10…保護層、 11…トランスデューサ
素子、 12…浮上スライダ面。[Explanation of Codes] 1 ... Ceramic substrate, 2 ... Base insulating layer, 3, 4 ... Lower magnetic layer, 5 ... Insulating layer, 6, 7 ... Coil, 8, 9
… Upper magnetic layer, 10… Protective layer, 11… Transducer element, 12… Flying slider surface.
Claims (3)
る、上部磁性層および下部磁性層、該上部および下部磁
性層と両磁性層間を通り磁気回路と交差する所定巻線の
コイルを形成する銅膜、コイル相互間およびコイルと上
部および下部磁性層間を電気的に絶縁する絶縁膜を積層
して構成される薄膜磁気ヘッドにおいて、上部および/
または下部の磁性層を、82.5ないし83.7重量%Niを含
むFe‐Ni系合金で、Hkが4から8 Oeの間にあり内
部応力が引張り応力で、応力の大きさが5×108ないし
1×1010dyn/cm2である材料により形成したことを特徴
とする薄膜磁気ヘッド。1. A ceramic film having a magnetic gap on a ceramic substrate, an upper magnetic layer and a lower magnetic layer, a copper film forming a coil of a predetermined winding that intersects a magnetic circuit passing through the upper and lower magnetic layers and both magnetic layers, and a coil. In a thin film magnetic head constituted by laminating insulating films electrically insulating between each other and between a coil and upper and lower magnetic layers,
Alternatively, the lower magnetic layer is made of Fe-Ni alloy containing 82.5 to 83.7 wt% Ni, Hk is in the range of 4 to 8 Oe, internal stress is tensile stress, and the magnitude of stress is 5 × 10 8 to 1 A thin-film magnetic head formed of a material having a density of × 10 10 dyn / cm 2 .
板バイアス電位が−25ないし−250Vとして、バイアス
スパッタリング法によって形成することを特徴とする請
求項1記載の薄膜ヘッドの製造方法。2. The method of manufacturing a thin film head according to claim 1, wherein the upper and / or lower magnetic layers are formed by a bias sputtering method with a substrate bias potential of −25 to −250V.
イアススパッタリング法により形成し、スパッタリング
ガスとして、Arガス中にN2ガスを、0.5ないし10.0%
添加したことを特徴とする請求項1記載の薄膜ヘッドの
製造方法。3. An upper magnetic layer and / or a lower magnetic layer are formed by a bias sputtering method, and N 2 gas in Ar gas is 0.5 to 10.0% as a sputtering gas.
The method of manufacturing a thin film head according to claim 1, wherein the thin film head is added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15855691A JP3177852B2 (en) | 1991-06-28 | 1991-06-28 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15855691A JP3177852B2 (en) | 1991-06-28 | 1991-06-28 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH056513A true JPH056513A (en) | 1993-01-14 |
| JP3177852B2 JP3177852B2 (en) | 2001-06-18 |
Family
ID=15674289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15855691A Expired - Lifetime JP3177852B2 (en) | 1991-06-28 | 1991-06-28 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3177852B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112020001602T5 (en) | 2019-03-28 | 2022-01-13 | Dow-Mitsui Polychemicals Company Ltd. | RESIN COMPOSITION FOR SEALING MATERIAL, MULTI-LAYER BODY, PACKING MATERIAL AND PACKING CONTAINER |
-
1991
- 1991-06-28 JP JP15855691A patent/JP3177852B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112020001602T5 (en) | 2019-03-28 | 2022-01-13 | Dow-Mitsui Polychemicals Company Ltd. | RESIN COMPOSITION FOR SEALING MATERIAL, MULTI-LAYER BODY, PACKING MATERIAL AND PACKING CONTAINER |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3177852B2 (en) | 2001-06-18 |
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