JPH0567670B2 - - Google Patents
Info
- Publication number
- JPH0567670B2 JPH0567670B2 JP18772287A JP18772287A JPH0567670B2 JP H0567670 B2 JPH0567670 B2 JP H0567670B2 JP 18772287 A JP18772287 A JP 18772287A JP 18772287 A JP18772287 A JP 18772287A JP H0567670 B2 JPH0567670 B2 JP H0567670B2
- Authority
- JP
- Japan
- Prior art keywords
- silver powder
- paste
- weight
- particle size
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 17
- 229920000647 polyepoxide Polymers 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 11
- 229920003986 novolac Polymers 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- -1 amine compound Chemical class 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 1
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 1
- TZLVUWBGUNVFES-UHFFFAOYSA-N 2-ethyl-5-methylpyrazol-3-amine Chemical compound CCN1N=C(C)C=C1N TZLVUWBGUNVFES-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- ALEBYBVYXQTORU-UHFFFAOYSA-N 6-hydrazinyl-6-oxohexanoic acid Chemical compound NNC(=O)CCCCC(O)=O ALEBYBVYXQTORU-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- UTTHLMXOSUFZCQ-UHFFFAOYSA-N benzene-1,3-dicarbohydrazide Chemical compound NNC(=O)C1=CC=CC(C(=O)NN)=C1 UTTHLMXOSUFZCQ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- BQQUFAMSJAKLNB-UHFFFAOYSA-N dicyclopentadiene diepoxide Chemical compound C12C(C3OC33)CC3C2CC2C1O2 BQQUFAMSJAKLNB-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- OVARTBFNCCXQKS-UHFFFAOYSA-N propan-2-one;hydrate Chemical compound O.CC(C)=O OVARTBFNCCXQKS-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子をリードフレームあるいは
セラミツク基板等へダイボンデイングする場合に
用いられる導電性樹脂ペーストに関するものであ
り、詳しくは導電性に優れオーミツクコンタクト
(オームの法則に従う電気的接触をいう)が可能
な導電性樹脂ペーストに関するものである。更
に、詳しくは揺変度が高くデイスペンサー塗布時
にペーストのたれや糸ひきが極めて少ない作業性
に優れた導電性樹脂ペーストに関するものであ
る。
〔従来技術〕
従来、半導体素子をリードフレーム等へダイボ
ンデイングする方法としては金とシリコンとの共
晶を形成することにより結合する金−シリコン共
晶法、また半田ペーストを用いて接合する半田接
合法が主に用いられてきた。金−シリコン共晶法
は金を用いるためコストが非常に高いとか、ある
いは作業温度が400〜450℃と高く半導体素子や部
品の劣化をもたらす欠点があつた。一方半田接合
法は比較的低コストではあるが耐熱性が劣ると
か、あるいは半田ボール飛散による半導体素子が
劣化するという欠点があつた。
この様な中にあつて最近エポキシ樹脂中に銀粉
末を分散させた導電性樹脂ペーストを用いる樹脂
接合法が多く用いられる用になつてきた。この樹
脂接合法は大巾なコストダウンが可能であり、ま
た硬化も200℃以下の低温で行なえる等の長所が
ある。しかし、半面ペースト状であるためペース
トをデイスペンサーで塗布する時に不必要にたれ
を生じたり糸切れが悪く、そのためにペーストが
リードフレームのステツチ部分に付着する等の不
具合が生じ易かつた。また本来は絶縁物であるエ
ポキシ樹脂に銀粉末を分散させているため、金−
シリコン共晶法に比べて導電性の点では劣るもの
であつた。
更に樹脂ペーストを硬化させる初期過程におい
ては反応はそれほど進行せず温度だけ上昇するた
め、ペーストの粘度が著しく低下し銀粉が沈降し
易くなる。従つて半導体素子の直下は銀粉が希薄
となり導電性が低下する等の欠点もあつた。
以上の様なことから導電性樹脂ペーストはオー
ミツクコンタクトが特に必要な素子には使用でき
なかつた。
〔発明の目的〕
本発明は上記の様な従来技術の欠点を解消
し、導電性及び作業性に優れた導電性樹脂ペース
トを得んとして鋭意検討を進めた結果、本来絶縁
物である粒径0.005μm〜0.02μmの超微粒子シリカ
を少量添加すると予想に反して逆に導電性が向上
すること、又、たれや糸ひきも起こりにくく、作
業性が著しく向上すること、更にはフレーク状銀
粉にそれより細い球状銀粉を少量添加すると銀粉
接合確立が増しやはり導電性を向上させることを
見い出し本発明を達成するに到つたものである。
〔発明の構成〕
本発明は、
(A) 粒径1〜50μmのフレーク状銀粉末70〜95重
量%及び粒径0.1〜0.5μmの球状銀粉末が30〜5
重量%からなる銀粉末混合物、
(B) 平均粒径が0.005〜0.02μmの超微粒子シリカ
粉末、
(C) フエノールノボラツク化合物及び潜在性アミ
ン化合物、
(D) 常温で液状で、加水分解性塩素含有量が
500ppm以下であるエポキシ樹脂、
(A),(B),(C)及び(D)を必須成分とし、銀粉末混合
物(A)を65〜80重量%、超微粒子シリカ粉末(B)を
0.3〜3重量%含有することを特徴とする半導体
用導電性樹脂ペーストに関するものである。本発
明に用いる銀粉末としては粒径1〜50μmのフレ
ーク状銀粉末と粒径0.1〜0.5μmの球状銀粉末との
混合物であつて、球状銀粉末を5〜30重量%含む
銀粉末である。フレーク状の銀粉末の粒径が1μm
以下だと、導電性が著しく低下し、50μm以上だ
と作業性が著しく悪くなり好ましくない。また球
状銀粉末はフレーク状の銀粉末の間に分散させる
ことにより、フレーク状銀粉どうしの接触を助
け、導電性を安定させるために加えるが、粒径が
0.1μm以下だと導電性が安定化せず、0.5μm以上
だと導電性が低下して好ましくない。球状銀粉末
の配合割合が5%以下では導電性が安定化せず、
30%以上では導電性が低下し、好ましくない。
また本発明では粒径が0.005〜0.02μmの超微粒
子シリカを0.3〜3重量%添加するが、この超微
粒子シリカは本来絶縁物にもかかわらず添加する
と逆に導電性が良くなる。これは導電性ペースト
を硬化させるに際して硬化の初期過程においては
反応はそれほど進行せず温度だけ上昇するので粘
度が急激に低下し銀粉粒子が沈降するが、少量の
超微粒子シリカを添加するとこの様な銀粉の沈降
が防がれるため導電性が向上するものと思われ
る。また、この超微粒子シリカを少量添加すると
ペーストの揺変度が著しく大きくなり、デイスペ
ンサーで塗布する時にシリンジのニードルの先端
からペーストが不必要にたれを生ずるとかあるい
は糸切れが悪くペーストが糸状にひいてその先端
がリードフレームのステツチ部分に付着する等の
不具合が全くなくなり、作業性が非常に優れたも
のとなる。
また、本発明においては、硬化剤としてフエノ
ールノボラツクと潜在性アミン化合物を併用する
ことを特徴としている。潜在性でないアミン化合
物は常温でも反応し易く保存性が著しく悪く使用
できない潜在性アミン化合物を用いた場合硬化温
度が高く、150℃以下では反応しないが150℃を越
えると急激な反応が進むため保存性には優れてい
るものの、硬化初期過程では粘度は急激に低下
し、銀粉粒子が沈降し易いため、結果としてペレ
ツト裏面の直下は樹脂分が多くなり導電性を低下
させる。
一方、フエノールノボラツクは溶融粘度が高
く、比較的低温でも硬化するためこれを硬化剤に
用いると硬化初期過程でも粘度の低下が小さく、
銀粉の沈降が起こりにくく、導電性の優れた硬化
物を得ることができる。しかし、フエノールノボ
ラツクは固型であり、かつエポキシ基と反応する
水酸基の当量も大きいため多く配合する必要があ
り、単独使用ではペーストの粘度が著しくあがり
実用には適さない。フエノールノボラツクより当
量の小さい潜在性アミン化合物を併用することに
より、粘度がそれほど高くなく実用に供せられる
ペーストを得ることができる。
本発明においてはこの様に、硬化剤として、フ
エノールノボラツクと潜在性アミン化合物を併用
すること、及び先に述べた超微粒子シリカを少量
添加すること、銀粉末としてフレーク状銀粉とそ
れより細い球状銀粉を併用することの三点の相乗
効果により硬化初期過程で銀粉末が全く沈降せ
ず、銀粉どうしの結合確立にも優れ、従来の導電
性樹脂ペーストにはみられなかつたオーミツクコ
ンタクトが可能な非常に導電性の優れたペースト
を得ることができるのである。
本発明に用いるフエノールノボラツクはフエノ
ールとホルムアルデヒドとを反応させることによ
つて得られる3から7核体を主体とするノボラツ
ク樹脂である。
潜在性アミン化合物としては、アジピン酸ヒド
ラジド、ドデカン酸ジヒドラジド、イソフタル酸
ヒドラジド、p−オキシ安息香酸ジヒドラジド等
のカルボン酸ヒドラジドやジシアンジアミドであ
る。
本発明に用いるエポキシ樹脂は常温で液状のも
のであるのに限定しているが、常温で液状のもの
でないと銀粉との混練において溶剤を必要とす
る。溶剤は気泡発生の原因となり、硬化物の導電
性を著しく低下させ使用できない。
また、エポキシ樹脂に含まれる加水分解性塩素
量を500ppm以下に限定しているが、この様なエ
ポキシ樹脂を用いることにより導電ペーストから
抽出(プレツシヤクツカ)される塩素の量を大巾
に低減することができる。抽出された塩素は半導
体素子表面のアルミ配線腐食をひきおこす原因と
なるため、抽出量が少なければそれだけ信頼性が
高くなる。
加水分解性塩素含有量の測定は以下の様にして
行なう。即ち、エポキシ樹脂0.5gをジオキサン
30mlに完全に溶解させ、これに1N−KOH液(エ
タノール溶液)5mlを加え、30分間煮沸還流す
る。これに80%アセトン水100ml加え、さらに
Conc.HNO32ml加えて、0.01N−AgNO3水溶液
で電位差滴定を行なう。
本発明に用いるエポキシ樹脂としては、例えば
ビスフエノールA、ビスフエノールF、フエノー
ルノボラツクとエピクロルヒドリンとの反応で得
られるジグリシジルエーテルで常温で液状のもの
ビニルシクロヘキセンジオキシド、ジシクロペン
タジエンジオキシド、アリサイクリツクジエポキ
シ−アジペイトの様な脂環式エポキシ、更にはn
−ブチルグリシジルエーテル、パーサテイツク酸
グリシジルエステル、スチレンオキサイド、フエ
ニルグリシジルエーテル、クレジルグリシジルエ
ーテル、ジシクロペンタジエンジエポキシドのよ
うな通常エポキシ樹脂の希釈剤として用いられる
ものがある。
更に、上記エポキシ樹脂のうち沸点が250℃以
上のものは非常に有用である。なぜならこれ等用
いた樹脂ペーストは、樹脂の揮発性が少ないた
め、連続使用しても粘度の変化が少ないためであ
る。
本発明において導電性樹脂ペースト中の銀粉末
含有量を65〜80重量%とした理由は65重量%より
少ないと硬化物の導電性が著しく低下してしまう
からである。一方80重量%より多いとペーストの
粘度が高くなり過ぎて実質上使用できなくなつて
しまう。また同様に超微粒子シリカ粉末の配合量
も0.3〜3重量%とした理由は0.3重量%より少な
いとあまりに少な過ぎて本発明の狙いの効果が充
分に出ないし、3重量%より多いと本来絶縁物で
あるが故に添加することにより導電性が低下した
り、またペーストの揺変度が高くなり過ぎてペー
ストが出にくくなつて作業しにくくなる等の不具
合が生じるためである。
更に本発明においては必要により硬化促進剤、
カツプリング剤、消泡剤等を添加して用いること
もできる。
〔発明の効果〕
以上述べた様に本発明による半導体用導電性樹
脂ペーストは硬化物の導電性に極めて優れ、オー
ミツクコンタクトが可能であるため、特に今まで
導電性樹脂ペーストが適用できなかつた半導体素
子、即ちメモリ−素子やトランジスター、ダイオ
ード等へも適用可能となる。また、デイスペンサ
ーによる塗布時にペーストのたれや糸ひきが生じ
ないことから組立生産性が向上する。また含有加
水分解性塩素量も極めて少ないことから半導体素
子表面のアルミ配線の腐食は起こりにく信頼性を
向上させることができる。
〔実施例〕
実施例1〜実施例4
粒径1〜50μmで平均粒径3μmのフレーク状銀
粉末(以下銀粉末a)と粒径0.1〜0.5μmで平均粒
径0.2μmの球状銀粉末(以下銀粉末b)と、平均
粒径0.01μmの超微粒子シリカ粉末と、ビスフエ
ノールAとエピクロルヒドリンとの反応により得
られるジグリジルエーテル(加水分解性塩素含有
量300ppm、エポキシ当量180で常温で液状、以下
エポキシ樹脂A)とフエノールノボラツク及び潜
在性アミン化合物とを第1表に示す割合で配合し
三本ロールで混練して導電性樹脂ペーストを得
た。
この導電性樹脂ペーストを真空チヤンバーにて
2mmHgで30分間脱泡した後、以下の方法により
各種の性能を評価した。
糸ひき性
導電性樹脂ペーストの中へ直径1mmφのピンを
深さ5mmまで沈めて、それを300mm/分の速度で
引き上げペーストが切れた時の高さを測定した。
ペーストのたれ
内径0.6mmのニードルをつけたシリンジにペー
ストを5ml入れ、ニードルを下にして試験管立て
に垂直に置き30分後ニードルの先端にたれたペー
ストの重量を測定した。
体積抵抗率
スライドガラス上にペーストを巾4mm厚さ
30μmに塗布し、200℃で1時間オーブン中で硬化
した後、硬化物の体積抵抗率を測定した。
オーミツクコンタクト性
ペーストをダイボンデイング材として、ダイオ
ードを組立て、オーミツクコンタクト性を評価し
た。
塩素量
ペーストの硬化物を微粉砕して、蒸留水中で
125℃20時間処理し、抽出された塩素量を測定し
た。
評価結果を第1表に示す。
比較例1〜比較例3
第1表に示す配合割合で実施例と全く同様にし
て導電性樹脂ペーストを得た。評価結果を第1表
に示す。
比較例 4
エポキシ樹脂としてビスフエノールAとエピク
ロルヒドリンとの反応により得られるジグリシジ
ルエーテル(加水分解性塩素含有量950ppm、エ
ポキシ当量180で常温で液状、以下エポキシ樹脂
B)を用いる以外は実施例1と全く同様にして導
電性樹脂ペーストを得た。評価結果を第1表に示
す。
【表】DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a conductive resin paste used for die bonding semiconductor elements to lead frames or ceramic substrates. This invention relates to a conductive resin paste that allows for electrical contact (electrical contact according to Ohm's law). More specifically, the present invention relates to a conductive resin paste that has a high thixotropy and is highly workable with very little sag or stringiness during application with a dispenser. [Prior Art] Conventionally, methods for die bonding semiconductor elements to lead frames, etc. include the gold-silicon eutectic method, in which gold and silicon are bonded by forming a eutectic, and the solder bonding method, in which they are bonded using solder paste. Legal has been mainly used. The gold-silicon eutectic method has drawbacks such as extremely high costs due to the use of gold, and high working temperatures of 400 to 450 degrees Celsius, which can lead to deterioration of semiconductor devices and parts. On the other hand, although the solder bonding method is relatively low cost, it has drawbacks such as poor heat resistance and deterioration of semiconductor elements due to solder ball scattering. Under these circumstances, a resin bonding method using a conductive resin paste in which silver powder is dispersed in an epoxy resin has recently come into widespread use. This resin bonding method has the advantage of being able to significantly reduce costs and curing at a low temperature of 200°C or less. However, since it is in the form of a semi-paste, when the paste is applied with a dispenser, unnecessary dripping occurs and thread breakage is difficult, which tends to cause problems such as the paste adhering to the stitching portion of the lead frame. In addition, since silver powder is dispersed in epoxy resin, which is originally an insulator, gold
It was inferior in terms of conductivity compared to the silicon eutectic method. Furthermore, in the initial process of curing the resin paste, the reaction does not progress much and only the temperature rises, so the viscosity of the paste decreases significantly and silver powder tends to settle. Therefore, there were also disadvantages such as the silver powder being diluted directly under the semiconductor element, resulting in a decrease in conductivity. For the reasons mentioned above, conductive resin pastes cannot be used in devices that particularly require ohmic contact. [Purpose of the Invention] The present invention has been made as a result of intensive studies aimed at solving the above-mentioned drawbacks of the prior art and obtaining a conductive resin paste with excellent conductivity and workability. Contrary to expectations, adding a small amount of ultrafine silica particles of 0.005 μm to 0.02 μm improves conductivity, prevents sagging and stringiness, significantly improves workability, and further improves flaky silver powder. It was discovered that adding a small amount of finer spherical silver powder increases the probability of silver powder bonding and also improves conductivity, thereby achieving the present invention. [Structure of the Invention] The present invention provides: (A) 70 to 95% by weight of flaky silver powder with a particle size of 1 to 50 μm and 30 to 5% of spherical silver powder with a particle size of 0.1 to 0.5 μm;
(B) Ultrafine silica powder with an average particle size of 0.005 to 0.02 μm, (C) A phenol novolac compound and a latent amine compound, (D) Hydrolyzable chlorine that is liquid at room temperature. The content is
Epoxy resin with a content of 500 ppm or less, (A), (B), (C) and (D) as essential components, 65 to 80% by weight of silver powder mixture (A), and ultrafine silica powder (B).
The present invention relates to a conductive resin paste for semiconductors characterized by containing 0.3 to 3% by weight. The silver powder used in the present invention is a mixture of flaky silver powder with a particle size of 1 to 50 μm and spherical silver powder with a particle size of 0.1 to 0.5 μm, and is a silver powder containing 5 to 30% by weight of spherical silver powder. . Particle size of flaky silver powder is 1μm
If it is less than 50 μm, the conductivity will be significantly reduced, and if it is more than 50 μm, the workability will be extremely poor, which is not preferable. In addition, spherical silver powder is added to help the flakes contact each other by dispersing them between them and to stabilize the conductivity, but the particle size
If it is less than 0.1 μm, the conductivity will not be stabilized, and if it is more than 0.5 μm, the conductivity will decrease, which is not preferable. If the blending ratio of spherical silver powder is less than 5%, the conductivity will not be stabilized,
If it exceeds 30%, the conductivity decreases, which is not preferable. Further, in the present invention, 0.3 to 3% by weight of ultrafine silica having a particle size of 0.005 to 0.02 μm is added, but although this ultrafine silica is originally an insulator, when added, the conductivity improves. This is because when curing a conductive paste, in the initial stage of curing, the reaction does not progress much and only the temperature rises, causing the viscosity to drop rapidly and the silver powder particles to settle. However, when a small amount of ultrafine silica is added, this happens. It is thought that conductivity is improved because silver powder is prevented from settling. Additionally, when a small amount of ultrafine silica is added, the thixotropy of the paste increases significantly, causing the paste to drip unnecessarily from the tip of the syringe needle when applied with a dispenser, or cause the paste to become stringy due to poor thread breakage. Furthermore, problems such as the tip sticking to the stitched portion of the lead frame are completely eliminated, and workability is extremely improved. Further, the present invention is characterized in that a phenol novolak and a latent amine compound are used together as a curing agent. Non-latent amine compounds tend to react even at room temperature and have extremely poor storage stability, making them unusable.If a latent amine compound is used, the curing temperature is high; it does not react below 150℃, but the reaction proceeds rapidly when the temperature exceeds 150℃, so it must be stored. Although it has excellent properties, the viscosity decreases rapidly during the initial curing process, and the silver powder particles tend to settle, resulting in a large amount of resin immediately below the back surface of the pellet, reducing conductivity. On the other hand, phenol novolak has a high melt viscosity and cures even at relatively low temperatures, so when it is used as a curing agent, the viscosity decreases little even during the initial curing process.
It is possible to obtain a cured product with excellent conductivity and less precipitation of silver powder. However, since phenol novolac is solid and has a large equivalent of hydroxyl groups that react with epoxy groups, it is necessary to blend a large amount of it, and when used alone, the viscosity of the paste increases significantly, making it unsuitable for practical use. By using a latent amine compound having a smaller equivalent than that of phenol novolak, it is possible to obtain a paste whose viscosity is not so high that it can be used practically. In this way, the present invention uses a combination of phenol novolac and a latent amine compound as a hardening agent, adds a small amount of the ultrafine particle silica mentioned above, and uses flaky silver powder and finer spherical silver powder as silver powder. Due to the synergistic effect of using silver powder in combination, the silver powder does not settle at all during the initial curing process, and it is also excellent in establishing bonds between silver powders, allowing for ohmic contact that has not been seen with conventional conductive resin pastes. This makes it possible to obtain a paste with very good conductivity. The phenol novolak used in the present invention is a novolak resin mainly composed of trinuclear to heptanuclear bodies obtained by reacting phenol with formaldehyde. Examples of latent amine compounds include carboxylic acid hydrazides such as adipic acid hydrazide, dodecanoic acid dihydrazide, isophthalic acid hydrazide, and p-oxybenzoic acid dihydrazide, and dicyandiamide. The epoxy resin used in the present invention is limited to one that is liquid at room temperature, but if it is not liquid at room temperature, a solvent will be required for kneading with silver powder. Solvents cause bubble generation and significantly reduce the conductivity of the cured product, making them unusable. Additionally, the amount of hydrolyzable chlorine contained in the epoxy resin is limited to 500 ppm or less, but by using such an epoxy resin, the amount of chlorine extracted from the conductive paste can be significantly reduced. I can do it. Extracted chlorine causes corrosion of aluminum wiring on the surface of semiconductor elements, so the smaller the amount extracted, the higher the reliability. The hydrolyzable chlorine content is measured as follows. That is, 0.5g of epoxy resin is mixed with dioxane.
Completely dissolve in 30 ml, add 5 ml of 1N KOH solution (ethanol solution), and boil and reflux for 30 minutes. Add 100ml of 80% acetone water to this, and
Add 2 ml of Conc.HNO 3 and perform potentiometric titration with a 0.01N-AgNO 3 aqueous solution. Epoxy resins used in the present invention include, for example, bisphenol A, bisphenol F, diglycidyl ether obtained by the reaction of phenol novolak and epichlorohydrin, which is liquid at room temperature, vinyl cyclohexene dioxide, dicyclopentadiene dioxide, aryl Cycloaliphatic epoxies such as cyclic diepoxy-adipate, and even n
-Butyl glycidyl ether, glycidyl persate acid ester, styrene oxide, phenyl glycidyl ether, cresyl glycidyl ether, and dicyclopentadiene diepoxide are commonly used as diluents for epoxy resins. Furthermore, among the above epoxy resins, those having a boiling point of 250°C or higher are very useful. This is because the resin pastes used have low volatility of the resin, so the viscosity does not change much even when used continuously. The reason why the silver powder content in the conductive resin paste is set to 65 to 80% by weight in the present invention is that if it is less than 65% by weight, the conductivity of the cured product will be significantly reduced. On the other hand, if it exceeds 80% by weight, the viscosity of the paste becomes too high and it becomes practically unusable. Similarly, the amount of ultrafine silica powder was set at 0.3 to 3% by weight, because if it is less than 0.3% by weight, it is too small and the desired effect of the present invention cannot be obtained sufficiently, and if it is more than 3% by weight, it is inherently insulating. This is because, since it is a substance, adding it causes problems such as a decrease in conductivity and an excessively high thixotropy of the paste, making it difficult to dispense the paste and making it difficult to work with. Furthermore, in the present invention, a curing accelerator,
A coupling agent, an antifoaming agent, etc. can also be added. [Effects of the Invention] As described above, the conductive resin paste for semiconductors according to the present invention has extremely excellent conductivity of the cured product and enables ohmic contact. It can also be applied to semiconductor devices, ie, memory devices, transistors, diodes, etc. In addition, assembly productivity is improved because no paste dripping or stringiness occurs during application with a dispenser. Furthermore, since the amount of hydrolyzable chlorine contained is extremely small, corrosion of the aluminum wiring on the surface of the semiconductor element is unlikely to occur, and reliability can be improved. [Example] Examples 1 to 4 A flaky silver powder (hereinafter referred to as silver powder a) with a particle size of 1 to 50 μm and an average particle size of 3 μm, and a spherical silver powder (hereinafter referred to as silver powder a) with a particle size of 0.1 to 0.5 μm and an average particle size of 0.2 μm Diglydyl ether (hydrolyzable chlorine content 300 ppm, epoxy equivalent 180, liquid at room temperature, The epoxy resin A), the phenol novolac and the latent amine compound were blended in the proportions shown in Table 1 and kneaded using a triple roll to obtain a conductive resin paste. After degassing this conductive resin paste in a vacuum chamber at 2 mmHg for 30 minutes, various performances were evaluated by the following methods. Stringability A pin with a diameter of 1 mmφ was sunk into the conductive resin paste to a depth of 5 mm, and the pin was pulled up at a speed of 300 mm/min to measure the height when the paste broke. Paste dripping 5 ml of paste was put into a syringe fitted with a needle with an inner diameter of 0.6 mm, placed vertically on a test tube stand with the needle facing down, and after 30 minutes, the weight of the paste dripping at the tip of the needle was measured. Volume resistivity Paste on a glass slide with a width of 4 mm and a thickness of 4 mm.
After coating to a thickness of 30 μm and curing in an oven at 200° C. for 1 hour, the volume resistivity of the cured product was measured. Ohmic contact property A diode was assembled using the paste as a die bonding material, and the ohmic contact property was evaluated. Amount of chlorine Finely grind the hardened paste and add it to distilled water.
The sample was treated at 125°C for 20 hours, and the amount of chlorine extracted was measured. The evaluation results are shown in Table 1. Comparative Examples 1 to 3 Conductive resin pastes were obtained in exactly the same manner as in the examples using the blending ratios shown in Table 1. The evaluation results are shown in Table 1. Comparative Example 4 Same as Example 1 except that diglycidyl ether obtained by the reaction of bisphenol A and epichlorohydrin (hydrolyzable chlorine content 950 ppm, epoxy equivalent weight 180, liquid at room temperature, hereinafter referred to as epoxy resin B) was used as the epoxy resin. A conductive resin paste was obtained in exactly the same manner. The evaluation results are shown in Table 1. 【table】
Claims (1)
95重量%及び粒径0.1〜0.5μmの球状銀粉末が30
〜5重量%からなる銀粉末混合物、 (B) 平均粒径が0.005〜0.02μmの超微粒子シリカ
粉末、 (C) フエノールノボラツク化合物及び潜在性アミ
ン化合物、 (D) 常温で液状で、加水分解性塩素含有量が
500ppm以下であるエポキシ樹脂、 (A),(B),(C)及び(D)を必須成分とし、銀粉末混合
物(A)を65〜80重量%、超微粒子シリカ粉末(B)を
0.3〜3重量%含有することを特徴とする半導体
用導電性樹脂ペースト。[Scope of Claims] 1 (A) Flake-like silver powder with a particle size of 1 to 50 μm 70 to
95% by weight and 30% spherical silver powder with particle size 0.1~0.5μm
A silver powder mixture consisting of ~5% by weight, (B) ultrafine silica powder with an average particle size of 0.005 to 0.02 μm, (C) a phenol novolac compound and a latent amine compound, (D) liquid at room temperature and hydrolyzable. chlorine content is
Epoxy resin with a content of 500 ppm or less, (A), (B), (C) and (D) as essential components, 65 to 80% by weight of silver powder mixture (A), and ultrafine silica powder (B).
A conductive resin paste for semiconductors characterized by containing 0.3 to 3% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18772287A JPS6431874A (en) | 1987-07-29 | 1987-07-29 | Electroconductive resin paste for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18772287A JPS6431874A (en) | 1987-07-29 | 1987-07-29 | Electroconductive resin paste for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6431874A JPS6431874A (en) | 1989-02-02 |
| JPH0567670B2 true JPH0567670B2 (en) | 1993-09-27 |
Family
ID=16211030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18772287A Granted JPS6431874A (en) | 1987-07-29 | 1987-07-29 | Electroconductive resin paste for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431874A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999020090A1 (en) * | 1997-10-14 | 1999-04-22 | Ibiden Co., Ltd. | Multilayer printed wiring board and its manufacturing method, and resin composition for filling through-hole |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0368660A (en) * | 1988-06-13 | 1991-03-25 | Ici Composites Inc | Filler blend for manufacturing electromagnetic wave shielding resin |
| JPH0394078A (en) * | 1989-06-23 | 1991-04-18 | Toyo Ink Mfg Co Ltd | Method for manufacturing conductive particles |
| US5227093A (en) * | 1991-11-29 | 1993-07-13 | Dow Corning Corporation | Curable organosiloxane compositions yielding electrically conductive materials |
| US5744285A (en) * | 1996-07-18 | 1998-04-28 | E. I. Du Pont De Nemours And Company | Composition and process for filling vias |
| JP3858902B2 (en) | 2004-03-03 | 2006-12-20 | 住友電気工業株式会社 | Conductive silver paste and method for producing the same |
| JP2006286366A (en) * | 2005-03-31 | 2006-10-19 | The Inctec Inc | Conductive paste composition and printed board |
| TWI496168B (en) * | 2008-07-03 | 2015-08-11 | Henkel IP & Holding GmbH | Thixotropic conductive composition |
| JP5827203B2 (en) * | 2012-09-27 | 2015-12-02 | 三ツ星ベルト株式会社 | Conductive composition |
| JP6062974B2 (en) * | 2014-02-24 | 2017-01-18 | 三ツ星ベルト株式会社 | Conductive composition |
| WO2016021535A1 (en) * | 2014-08-08 | 2016-02-11 | 横浜ゴム株式会社 | Conductive composition, solar cell, and solar cell module |
| JP7519752B2 (en) * | 2015-05-08 | 2024-07-22 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン | Sinterable films and pastes and methods of use thereof |
| JP2017071707A (en) * | 2015-10-08 | 2017-04-13 | 信越化学工業株式会社 | Liquid thermal conductive resin composition and electronic component |
-
1987
- 1987-07-29 JP JP18772287A patent/JPS6431874A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999020090A1 (en) * | 1997-10-14 | 1999-04-22 | Ibiden Co., Ltd. | Multilayer printed wiring board and its manufacturing method, and resin composition for filling through-hole |
| CN100418390C (en) * | 1997-10-14 | 2008-09-10 | 揖斐电株式会社 | Multilayer printed circuit board and its producing method,filling resin composition for through hole |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6431874A (en) | 1989-02-02 |
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| Date | Code | Title | Description |
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| EXPY | Cancellation because of completion of term |