JPH057122B2 - - Google Patents
Info
- Publication number
- JPH057122B2 JPH057122B2 JP58099902A JP9990283A JPH057122B2 JP H057122 B2 JPH057122 B2 JP H057122B2 JP 58099902 A JP58099902 A JP 58099902A JP 9990283 A JP9990283 A JP 9990283A JP H057122 B2 JPH057122 B2 JP H057122B2
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- layer
- aln
- coating layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005520 cutting process Methods 0.000 claims description 43
- 239000011247 coating layer Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 10
- 229910017109 AlON Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 16
- 230000035939 shock Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Ceramic Products (AREA)
Description
本発明は、耐摩耗性、耐熱衝撃性及び耐機械的
衝撃性にすぐれ、かつ工業的量産性に適した高速
切削用チツプに関するものである。
従来、高速切削用工具材料としては、耐摩耗性
にすぐれたAl2O3−TiC系材料が一般的に知られ
ているが、耐熱衝撃性及び耐機械的衝撃性が不十
分であるために、フライス切削のように刃先に常
時熱衝撃及び機械的衝撃が加わる高速断続切削に
用いるには不向きであつた。
そこで、高速断続切削に適した工具材料として
機械的強度、硬度及び耐熱衝撃性にすぐれた
Si3N4が近年大いに期待されている。しかしなが
ら、Si3N4は耐摩耗性に劣ること、難焼結材料で
あること等の問題点を有している。このような問
題を解決するために種々の研究機関で研究がなさ
れており、例えばTiC、TiN及びTiCNのうち1
種以上5〜40重量%、AlN及び希土類元素の酸
化物他6種のうち1種以上10重量%以下及び
Si3N4残部からなる組成を有する切削工具用材料
(特開昭56−32377)が提案されているが、依然と
して期待される程度の耐摩耗性を有していないこ
と、更にホツトプレス法が必要である故に製造コ
ストが高いこと等の理由でいずれも量産向け高速
切削用工具材料としての実用性を欠いている。
発明者らは、種々研究を重ねた結果、Si3N4と
TiNとの2者を主成分とし、これに焼結助剤と
して後述の複合酸化物を添加することによつて、
前記Si3N4の有するすぐれた諸特性を維持しつ
つ、TiNの有する耐摩耗性及び高靱性を合わせ
もち、かつ量産可能なコールドプレス法によつて
製造される焼結体を得、更にその焼結体表面上に
後述の被覆層を設けることによつて一層耐摩耗性
を向上せしめた高速切削用工具を得ることを見出
したのである。
本発明は、上記の知見に基づいてなされたもの
で、重量基準でSi3N450〜85%、TiN10〜45%並
びに残部焼結助剤としてY2O3及びDy2O3のうち
少なくとも1種とAlNとAl2O3とを含む組成であ
つて、該焼結助剤は上記少なくとも1種対後二者
の合量の比が3/1〜1/3であり、後二者のう
ちAlN量が後二者合量に対して5〜60%である
焼結体を基体とし、該基体の表面上にAl2O3より
なる被覆層が設けられていることを特徴とする高
速切削用チツプを要旨とするものである。
また、上記特定発明と関連する本第二発明は、
上記基体の表面上にAlN層及びAlON層のうち少
なくとも1層又はTiC層及びTiN層のうち少なく
とも1層よりなる内層と更にその上にAl2O3層よ
りなる外層とで構成される多量被覆層が設けられ
ていることを特徴とする高速切削用チツプであ
る。
次に本発明の切削用チツプの基体を構成する成
分の種類と組成範囲を上記の通りに限定した理由
を説明する。
Si3N4とTiNは基体の主成分となるものであ
り、特にSi3N4は前述の如くすぐれた諸特性を有
するために必要不可欠である。出発原料としては
α型のものが適しており、粒度は2μm以下のも
のが望ましい。TiNは高温時でさえも緻密な分
散相を形成し、ひいては焼結体の靱性を向上せし
め、さらに公知のように切削工具として使用した
場合、クレータ摩耗の防止効果を有する。10%未
満ではその効果に乏しく、45%を超えると熱衝撃
に弱く劣化し易くなることから、その含有量を10
〜45%に限定した。
焼結助剤は上記主成分の焼結性を高め、本発明
の切削用チツプ基体を工業的に量産可能なコール
ドプレス法によつて製造することを可能にするも
のである。5%未満ではその効果に乏しく、40%
を超えると高温時に基体が軟化し高速切削に耐え
なくなることから、その含有量を5〜40%に限定
した。Y2O3及びDy2O3のうち少なくとも1種対
AlNとAl2O3との合量の比を3/1〜1/3に限
定したのは、この範囲が最も焼結性及び焼結体の
機械的強度を高めるためである。
更にAlNとAl2O3との合量のうちAlNを5〜60
%と限定したのは強度の低下を生じずに硬度を高
めるためで、5%未満では効果が少なく、60%を
超えると強度が低下するためである。
次に本発明の切削用チツプの一般的製造法を述
べる。
本発明の切削用チツプ基体は、基体を構成する
各成分の混合粉を1ton/cm2以上の圧力でコールド
プレスし、成形体を窒素雰囲気中で1550〜1750
℃、保持時間10〜120分の条件で焼成することに
よつて得られる。この場合、温度が1550℃に達し
ないと焼結せず、1750℃を超えるとSi3N4成分の
発揮が激しく発泡が起こる。
このようにして得られた切削用チツプ基体を所
定の形状に研磨した後、その表面に所望の被覆層
を設ける。被覆層を設ける方法としては、イオン
フレーテイング法、反応スパツタリング法等の物
理蒸着法や化学気相析出法(以下「CVD法」と
略記する)が可能であるが、これらの中でも
CVD法の方が被覆層成分の選択範囲が広く、か
つ反応速度も速いという点で好ましい。
CVD法に従う場合、Al2O3の被覆層は、研磨後
の切削用チツプ基体を反応容器中に装填し、1000
〜1100℃に加熱した後その中にAlCl3、CO2及び
H2ガスを注入して該切削用チツプ基体の表面で
次に示す反応式(1)のごとき析出反応を生ぜしめる
ことによつて設けられる。
(1) 2AlCl3+3CO2+3H2
→Al2O3+6HCl+3CO
またAlN、AlON、TiC及びTiNの被覆層は、
それぞれ次に示す反応式(2)、(3)、(4)、及び(5)の左
辺の混合ガスを反応容器内へ注入し、反応式(1)の
析出反応と同じ要領で反応させることによつて設
けられる。
(2) 2AlCl3+N2+3H2→2AlN+6HCl
(3) 2AlCl3+2CO2+3H2+N2
→2AlON+6HCl+2CO
(4) TiCl4+CH4→TiC+4HCl
(5) 2TiCl4+N2+4H2→2TiN+8HCl
被覆層はAl2O3のみからなる一重被覆層でも良
いが、先に上述の反応式(2)〜(5)に示される析出反
応のいずれか一種以上によつて生成される層を設
け、次いで反応式(1)に示される析出反応によつて
Al2O3の層を設けることにより多重被覆層とする
こともできる。
尚、被覆層の厚みが0.3μm未満であると耐摩耗
性の改善に効果が少なく、厚くなるに従つてその
効果も大きくなるが、5μmを超えると切削時に
剥離が生じやすく使用に耐えない。但し、本発明
の切削用チツプに用いた被覆層は従来のものに比
べると極めて剥離が生じにくいものである。その
理由は、TiNの熱膨脹係数8.5×10-6/℃が被覆
層のうち最も熱膨脹係数の大きいAl2O3の熱膨脹
係数7.8×10-6/℃と同程度であるために、TiN
を基体に含有させた結果、従来剥離の原因となつ
ていた基体の熱膨脹係数と被覆層のそれとの大き
な差が解消され、基体と被覆層との密着性が良好
になつたためであると考えられる。
以下実施例を示す。
実施例
出発原料として平均粒径0.7μmのSi2N4粉末
(α型Si3N4含有量90%)、同2μmのTiN、同0.7μ
mのAl2O3、同1.2μmのY2O3と同1.0μmのDy2O3、
同1.2μmのAlNを用い、これらの粉末を第1表に
示す成分組成で配合し、湿式ボールミルにより混
合粉砕し、乾燥した。乾燥後の混合粉末100重量
部に対し結合剤としてパラフイン5重量部を添加
し混練し顆粒として圧力1500Kg/cm2でコールドプ
レスし、結合剤を除去するために成形体を真空
中、温度800℃、保持時間30分の条件で焼成した
後、続いて窒素雰囲気中、温度1650℃、保持時間
60分の条件で焼結させ、焼結体を研磨することに
よつて、4×8×25mmの抗折試験用焼結体1〜1
0を製造した。尚、焼結体1〜5はその組成が本
発明切削用チツプの基体の組成範囲に含まれるも
のであり、焼結体6〜10はその組成が本発明切
削チツプの基体の組成範囲に含まれないものであ
る。また、比較のためにAl2O370%、TiC25%、
Hb2O54%及びMgO1%からなる従来の焼結体を
ホツトプレス法によつて製造し、焼結体1〜10
と同様に研磨することによつて焼結体11を得
た。得られた焼結体1〜11を用いて相対比重、
抗折力及び硬度を測定し、その結果を第2表に示
す。第2表の硬度は荷重を45Nとしてスーパフイ
シヤル試験機を用いて測定したロツクウエル硬度
の値である。
The present invention relates to a high-speed cutting chip that has excellent wear resistance, thermal shock resistance, and mechanical shock resistance, and is suitable for industrial mass production. Conventionally, Al 2 O 3 -TiC-based materials with excellent wear resistance have been generally known as tool materials for high-speed cutting, but due to insufficient thermal shock resistance and mechanical shock resistance. However, it was not suitable for use in high-speed intermittent cutting, such as milling, in which thermal and mechanical shocks are constantly applied to the cutting edge. Therefore, as a tool material suitable for high-speed interrupted cutting, it has excellent mechanical strength, hardness, and thermal shock resistance.
Si 3 N 4 has received great promise in recent years. However, Si 3 N 4 has problems such as poor wear resistance and being a difficult-to-sinter material. In order to solve these problems, various research institutes are conducting research, for example, one of TiC, TiN and TiCN.
5 to 40% by weight of at least one species, 10 to 10% by weight of one or more of AlN and 6 other oxides of rare earth elements, and
A material for cutting tools having a composition consisting of the remainder of Si 3 N 4 has been proposed (Japanese Patent Laid-Open No. 56-32377), but it still does not have the expected level of wear resistance and requires a hot pressing method. Therefore, all of them lack practicality as high-speed cutting tool materials for mass production due to high manufacturing costs and other reasons. As a result of various research, the inventors discovered that Si 3 N 4 and
By using TiN as the main component and adding the composite oxide described below as a sintering aid,
A sintered body that maintains the excellent properties of Si 3 N 4 , has the wear resistance and high toughness of TiN, and is manufactured by a cold press method that can be mass-produced, and furthermore, It has been discovered that a high-speed cutting tool with further improved wear resistance can be obtained by providing a coating layer, which will be described later, on the surface of the sintered body. The present invention was made based on the above findings, and consists of 50 to 85% Si 3 N 4 , 10 to 45% TiN and the balance at least Y 2 O 3 and Dy 2 O 3 as a sintering aid on a weight basis. 1 type, AlN, and Al 2 O 3 , the sintering aid has a total ratio of the above at least one type to the latter two in a range of 3/1 to 1/3; A sintered body having an AlN content of 5 to 60% of the total amount of the latter two is used as a base, and a coating layer made of Al 2 O 3 is provided on the surface of the base. This article focuses on high-speed cutting chips. In addition, the second invention related to the above specified invention is:
A large amount of coating is formed on the surface of the above-mentioned substrate by an inner layer consisting of at least one layer among AlN layer and AlON layer or at least one layer among TiC layer and TiN layer, and an outer layer consisting of three Al 2 O layers thereon. This is a high-speed cutting chip characterized by being provided with a layer. Next, the reason why the types and composition ranges of the components constituting the substrate of the cutting tip of the present invention are limited as described above will be explained. Si 3 N 4 and TiN are the main components of the substrate, and Si 3 N 4 in particular is essential because it has excellent properties as described above. As a starting material, an α-type material is suitable, and a particle size of 2 μm or less is desirable. TiN forms a dense dispersed phase even at high temperatures, which improves the toughness of the sintered body, and also has the effect of preventing crater wear when used as a cutting tool, as is known. If it is less than 10%, the effect is poor, and if it exceeds 45%, it becomes susceptible to thermal shock and easily deteriorates, so the content should be reduced to 10%.
Limited to ~45%. The sintering aid enhances the sinterability of the above-mentioned main components and makes it possible to manufacture the cutting chip substrate of the present invention by a cold press method that can be industrially mass-produced. If it is less than 5%, the effect is poor, and 40%
If the content exceeds 5%, the base material becomes soft at high temperatures and cannot withstand high-speed cutting, so the content was limited to 5% to 40%. At least one pair of Y 2 O 3 and Dy 2 O 3
The reason why the ratio of the total amount of AlN and Al 2 O 3 is limited to 3/1 to 1/3 is that this range maximizes the sinterability and the mechanical strength of the sintered body. Furthermore, out of the total amount of AlN and Al 2 O 3 , AlN is 5 to 60
The reason why it is limited to % is to increase hardness without reducing strength; less than 5% is less effective, and more than 60% reduces strength. Next, a general method for manufacturing the cutting tip of the present invention will be described. The cutting chip substrate of the present invention is produced by cold-pressing a mixed powder of each component constituting the substrate at a pressure of 1 ton/cm 2 or more, and molding the molded product at a temperature of 1550 to 1750 in a nitrogen atmosphere.
It is obtained by firing under the conditions of ℃ and holding time of 10 to 120 minutes. In this case, sintering will not occur if the temperature does not reach 1550°C, and if the temperature exceeds 1750°C, the Si 3 N 4 component will be active and foaming will occur. After the cutting chip substrate thus obtained is polished into a predetermined shape, a desired coating layer is provided on its surface. Possible methods for forming the coating layer include physical vapor deposition methods such as ion plating method and reactive sputtering method, and chemical vapor deposition method (hereinafter abbreviated as "CVD method").
The CVD method is preferable because it allows a wider selection range of coating layer components and has a faster reaction rate. When following the CVD method, the coating layer of Al 2 O 3 is applied by loading the polished cutting chip substrate into a reaction vessel and applying 1000
AlCl 3 , CO 2 and
It is provided by injecting H 2 gas to cause a precipitation reaction as shown in the following reaction formula (1) on the surface of the cutting chip substrate. (1) 2AlCl 3 +3CO 2 +3H 2 →Al 2 O 3 +6HCl+3CO Also, the coating layers of AlN, AlON, TiC and TiN are
Inject the mixed gases on the left side of reaction equations (2), (3), (4), and (5) shown below into the reaction vessel and react in the same manner as the precipitation reaction of reaction equation (1). provided by. (2) 2AlCl 3 +N 2 +3H 2 →2AlN+6HCl (3) 2AlCl 3 +2CO 2 +3H 2 +N 2 →2AlON+6HCl+2CO (4) TiCl 4 +CH 4 →TiC+4HCl (5) 2TiCl 4 +N 2 +4H 2 →2TiN+8HCl The coating layer is Al 2 O Although a single coating layer consisting of only 3 may be used, first a layer produced by one or more of the precipitation reactions shown in reaction formulas (2) to (5) above is provided, and then a layer formed by one or more of the precipitation reactions shown in reaction formula (1) is provided. By the precipitation reaction shown in
Multiple coating layers can also be provided by providing a layer of Al 2 O 3 . If the thickness of the coating layer is less than 0.3 μm, it will have little effect on improving wear resistance, and the effect will increase as the thickness increases, but if it exceeds 5 μm, peeling will easily occur during cutting, making it unusable. However, the coating layer used in the cutting tip of the present invention is extremely resistant to peeling compared to conventional coatings. The reason for this is that the coefficient of thermal expansion of TiN, 8.5×10 -6 /℃, is comparable to the coefficient of thermal expansion of Al 2 O 3 , which has the largest coefficient of thermal expansion among the coating layers, 7.8×10 -6 /℃.
This is thought to be due to the fact that the large difference between the coefficient of thermal expansion of the substrate and that of the coating layer, which conventionally caused peeling, was eliminated, and the adhesion between the substrate and the coating layer became better, as a result of including it in the substrate. . Examples are shown below. Example As starting materials, Si 2 N 4 powder with an average particle size of 0.7 μm (α-type Si 3 N 4 content 90%), TiN with an average particle size of 2 μm, and TiN with an average particle size of 0.7 μm
m Al 2 O 3 , 1.2 μm Y 2 O 3 and 1.0 μm Dy 2 O 3 ,
Using the same 1.2 μm AlN, these powders were blended with the component composition shown in Table 1, mixed and ground using a wet ball mill, and dried. 5 parts by weight of paraffin as a binder was added to 100 parts by weight of the dried mixed powder, kneaded, and cold-pressed to form granules at a pressure of 1500 kg/cm 2 . To remove the binder, the compact was heated in a vacuum at a temperature of 800°C. After firing under the conditions of , holding time for 30 minutes, followed by firing in a nitrogen atmosphere at a temperature of 1650°C for a holding time of 30 minutes.
By sintering for 60 minutes and polishing the sintered body, sintered bodies 1 to 1 for bending test with a size of 4 x 8 x 25 mm were obtained.
0 was manufactured. Incidentally, the compositions of sintered bodies 1 to 5 are included in the composition range of the substrate of the cutting tip of the present invention, and the compositions of sintered bodies 6 to 10 are included in the composition range of the substrate of the cutting tip of the present invention. It is something that cannot be done. Also, for comparison, Al 2 O 3 70%, TiC 25%,
Conventional sintered bodies consisting of 4% Hb 2 O 5 and 1% MgO were manufactured by hot pressing method, and sintered bodies 1 to 10
A sintered body 11 was obtained by polishing in the same manner as above. Using the obtained sintered bodies 1 to 11, the relative specific gravity,
Transverse rupture strength and hardness were measured and the results are shown in Table 2. The hardness values in Table 2 are Rockwell hardness values measured using a Superficial testing machine with a load of 45N.
【表】【table】
【表】【table】
【表】
第2表に示されるように、本発明切削用チツプ
の基体の組成範囲に含まれる組成を有する焼結体
1〜5は、従来の焼結体11と同等のすぐれた特
性をもつものである。これに対して、本発明切削
用チツプの基体の組成範囲に含まれない組成を有
する焼結体6〜10は、抗折力において著しく劣
つており、又比重及び硬度においても若干劣つて
いた。従つて、本発明切削用チツプの基体につい
ては、その組成が前述の範囲に含まれる限り、ホ
ツトプレス法によつて製造される従来の焼結体と
同等の機械的強度、焼結性及び硬度を有するもの
を、コールドプレス法によつて製造することが可
能である。
次に前記抗折試験用焼結体と同一製造工程で並
行して得られた他の焼結体をSNGN432形状(チ
ヤンフアー0.1mm×−25°)及びRNGN432形状に
研磨し、これを切削用チツプの基体とし、基体の
表面にCVD装置を用いて第3表に示す被覆層を
設けることによつて切削用チツプ1〜10,1
a,1b,1c,1d及び1eを製造した。
CVD装置自体は周知であるが、その使用条件に
よつては反応率や被覆層の厚みが若干異なるので
これを付記すると、注入する混合ガスの流量は
H2及びN2ガスについてはそれぞれ理論量の4倍
及び7倍とし、その他のガスについてはほぼ理論
量に従い、また反応容器内の圧力はTiN析出反
応の場合は500Torrに保ち、その他の場合は30〜
50Torrに保つた。被覆層の厚みは混合ガスの流
入時間によつても異なるが、予備的に試験を行
い、Al2O3、AlN、及びAlONの場合は単位時間
当たり0.5μm折出し、TiC及びTiNの場合は単位
時間当たり1μm析出することを確かめ、被覆層
が所望の厚みに設けられるように流入時間を定め
た。[Table] As shown in Table 2, sintered bodies 1 to 5 having compositions falling within the composition range of the substrate of the cutting tip of the present invention have excellent properties equivalent to those of the conventional sintered body 11. It is something. On the other hand, sintered bodies 6 to 10 having compositions outside the composition range of the substrate of the cutting tip of the present invention were significantly inferior in transverse rupture strength, and were also slightly inferior in specific gravity and hardness. . Therefore, as long as the substrate of the cutting tip of the present invention falls within the above-mentioned range, it has the same mechanical strength, sinterability, and hardness as the conventional sintered body produced by the hot press method. It is possible to manufacture those with the cold pressing method. Next, another sintered body obtained in parallel with the same manufacturing process as the sintered body for bending test was polished into SNGN432 shape (chamber 0.1mm x -25°) and RNGN432 shape, and this was used as a cutting chip. Cutting chips 1 to 10, 1 were prepared by using a substrate of
a, 1b, 1c, 1d and 1e were manufactured.
Although the CVD equipment itself is well known, the reaction rate and thickness of the coating layer vary slightly depending on the conditions of use, so it should be noted that the flow rate of the mixed gas to be injected is
The H 2 and N 2 gases were set at 4 times and 7 times the theoretical amount, respectively, and the other gases were kept approximately at the theoretical amount, and the pressure inside the reaction vessel was maintained at 500 Torr in the case of TiN precipitation reaction, and in other cases. 30~
It was kept at 50Torr. The thickness of the coating layer varies depending on the inflow time of the mixed gas, but preliminary tests showed that for Al 2 O 3 , AlN, and AlON, 0.5 μm is precipitated per unit time, and for TiC and TiN, the thickness of the coating layer is 0.5 μm per unit time. It was confirmed that 1 μm was deposited per unit time, and the inflow time was determined so that the coating layer had a desired thickness.
【表】
するために基体の表面上に被覆層を
設けなかつたものである。
これらの切削用チツプについて、第4表に示す
条件で試験と試験を行い、試験において30
分間切削後のフランク摩耗幅VB(mm)を測定し、
試験において刃先が欠損するまでの衝撃回数
(以下「N」と称する)を測定し、それぞれの結
果を第5表に示した。また、比較のために、被覆
層を設けていない切削用チツプ1f,5a及び1
1についても第4表に示す条件で試験を行い、結
果を第5表に示した。二種類の試験を実施した理
由は、VBから耐摩耗性を評価し、Nから耐熱衝
撃性と耐機械時衝撃性を評価するためである。[Table] No coating layer is provided on the surface of the substrate to achieve this.
These cutting chips were tested and tested under the conditions shown in Table 4.
Measure the flank wear width V B (mm) after cutting for minutes,
In the test, the number of impacts (hereinafter referred to as "N") until the cutting edge broke was measured, and the results are shown in Table 5. For comparison, cutting chips 1f, 5a and 1 without a coating layer are also shown.
1 was also tested under the conditions shown in Table 4, and the results are shown in Table 5. The reason why two types of tests were conducted was to evaluate wear resistance from VB , and to evaluate thermal shock resistance and mechanical impact resistance from N.
【表】【table】
【表】
注*1)チツプ1d,1f及び5aについて
は、フライス切削中の摩耗が激しかつたので、刃
先が欠損する前に切削を中断し、それまでの衝撃
回数を測定した。
注*2)チツプ1eについては、旋盤切削中、
フライス切削中それぞれ1分、1パスで剥離が生
じた。
第5表に示されるように、基体の組成が本発明
の範囲に含まれるチツプ1〜5,1a,1b及び
1c(以下「範囲内品」と称する)は、基体の組
成が本発明の範囲に含まれないチツプ6〜10と
比べて著しくすぐれた耐摩耗性、耐熱衝撃性及び
耐機械的衝撃性を有している。このことは、同一
の被覆層が設けられている場合には、本発明の範
囲に含まれる組成からなる基体を用いることによ
つて、基体を構成する各成分のすぐれた特性が発
揮されることを示している。
また範囲内品は、チツプ1d,1e,1f,5
a及び11と比べても著しくすぐれた特性を有し
ている。このことは、たとえ基体の組成が本発明
の範囲に含まれていても、あるいは基体が範囲内
品の基体と同等の特性を有していても、被覆層が
設けられていない場合あるいは被覆層の厚みが不
適当である場合には、従来の切削用チツプと同程
度若しくはそれ以下の性能を有する切削用チツプ
しか得られないが、本発明の範囲に含まれる組成
からなる基体に本発明切削用チツプに用いる被覆
層を適当な厚みに設けることによつて、一層耐摩
耗性、耐熱衝撃性及び耐機械的衝撃性を向上せし
めることができることを示している。
以上述べたようにこの発明の高速切削用チツプ
は、従来の高速切削用チツプと同等の機械的強度
及び硬度を有し、加えて従来品に勝る耐摩耗性、
耐熱衝撃性及び耐機械的衝撃性を有しているの
で、高速連続切削に用いるのに適しており、かつ
コールドプレス法によつて製造されるので量産性
にも適している。[Table] Note *1) Chips 1d, 1f, and 5a suffered severe wear during milling, so cutting was interrupted before the cutting edge broke and the number of impacts was measured. Note *2) For chip 1e, during lathe cutting,
During milling, peeling occurred after 1 minute and 1 pass, respectively. As shown in Table 5, chips 1 to 5, 1a, 1b, and 1c (hereinafter referred to as "products within the range") whose substrate compositions are within the scope of the present invention are chips whose substrate compositions are within the scope of the present invention. It has significantly superior abrasion resistance, thermal shock resistance, and mechanical shock resistance compared to chips 6 to 10, which are not included. This means that when the same coating layer is provided, by using a substrate having a composition falling within the scope of the present invention, the excellent characteristics of each component constituting the substrate will be exhibited. It shows. Products within the range include chips 1d, 1e, 1f, 5
It has significantly superior properties compared to a and 11. This applies even if the composition of the substrate falls within the scope of the present invention or even if the substrate has properties equivalent to those of products within the scope, if no coating layer is provided or if the coating layer is not provided. If the thickness of the cutting tip is inappropriate, a cutting tip with performance comparable to or lower than that of a conventional cutting tip will be obtained. This shows that by providing the coating layer used in the chip with an appropriate thickness, it is possible to further improve the wear resistance, thermal shock resistance, and mechanical shock resistance. As described above, the high-speed cutting chip of the present invention has mechanical strength and hardness equivalent to conventional high-speed cutting chips, and has wear resistance superior to conventional products.
Since it has thermal shock resistance and mechanical shock resistance, it is suitable for use in high-speed continuous cutting, and since it is manufactured by a cold press method, it is also suitable for mass production.
Claims (1)
びに残部焼結助剤としてY2O3及びDy2O3のうち
少なくとも1種とAlNとAl2O3とを含む組成であ
つて、該焼結助剤は上記少なくとも1種対後二者
の合量の比が3/1〜1/3であり、後二者のう
ちAlN量が後二者合量に対して5〜60%である
焼結体を基体とし、該基体の表面上にAl2O3より
なる被覆層が設けられていることを特徴とする高
速切削用チツプ。 2 重量基準でSi3N450〜85%、TiN10〜45%並
びに残部焼結助剤としてY2O3及びDy2O3のうち
少なくとも1種とAlNとAl2O3とを含む組成であ
つて、該焼結助剤は上記少なくとも1種対後二者
の合量の比が3/1〜1/3であり、後二者のう
ちAlN量が後二者合量に対して5〜60%である
焼結体を基体とし、該基体の表面上にAlN層及
びAlON層のうち少なくとも1層又はTiC層及び
TiN層のうち少なくとも1層よりなる内層と更
にその上にAl2O3層よりなる外層とで構成される
多重被覆層が設けられていることを特徴とする高
速切削用チツプ。[Claims] 1. 50 to 85% by weight of Si 3 N 4 , 10 to 45% of TiN, and the balance is at least one of Y 2 O 3 and Dy 2 O 3 as a sintering aid, AlN, and Al 2 O. 3 , the sintering aid has a ratio of the total amount of at least one of the above to the latter two from 3/1 to 1/3, and the amount of AlN of the latter two is 3/1 to 1/3. A high-speed cutting chip characterized in that the base is a sintered body having a content of 5 to 60% of the total amount, and a coating layer made of Al 2 O 3 is provided on the surface of the base. 2 A composition containing 50 to 85% Si 3 N 4 , 10 to 45% TiN, and the balance containing at least one of Y 2 O 3 and Dy 2 O 3 as a sintering aid, AlN, and Al 2 O 3 on a weight basis. In the sintering aid, the ratio of the total amount of the at least one of the above to the latter two is 3/1 to 1/3, and the amount of AlN of the latter two is 5/5 to the total amount of the latter two. ~60% of the sintered body is used as a base, and at least one layer of AlN layer and AlON layer or TiC layer and
A high-speed cutting chip characterized in that a multilayer coating layer is provided, comprising an inner layer made of at least one TiN layer and an outer layer made of three Al 2 O layers thereon.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58099902A JPS59224202A (en) | 1983-06-03 | 1983-06-03 | High speed cutting tip |
| EP84100039A EP0113660B1 (en) | 1983-01-10 | 1984-01-03 | Nitride based cutting tool |
| DE8484100039T DE3484318D1 (en) | 1983-01-10 | 1984-01-03 | NITRIDE-BASED CUTTING TOOL. |
| US06/569,683 US4578087A (en) | 1983-01-10 | 1984-01-10 | Nitride based cutting tool and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58099902A JPS59224202A (en) | 1983-06-03 | 1983-06-03 | High speed cutting tip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59224202A JPS59224202A (en) | 1984-12-17 |
| JPH057122B2 true JPH057122B2 (en) | 1993-01-28 |
Family
ID=14259700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58099902A Granted JPS59224202A (en) | 1983-01-10 | 1983-06-03 | High speed cutting tip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59224202A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62162683A (en) * | 1986-01-14 | 1987-07-18 | 住友電気工業株式会社 | Coated silicon nitride product |
| JPH0295502A (en) * | 1988-09-28 | 1990-04-06 | Ngk Spark Plug Co Ltd | High speed cutting chip |
-
1983
- 1983-06-03 JP JP58099902A patent/JPS59224202A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59224202A (en) | 1984-12-17 |
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