JPH0572095B2 - - Google Patents

Info

Publication number
JPH0572095B2
JPH0572095B2 JP57098084A JP9808482A JPH0572095B2 JP H0572095 B2 JPH0572095 B2 JP H0572095B2 JP 57098084 A JP57098084 A JP 57098084A JP 9808482 A JP9808482 A JP 9808482A JP H0572095 B2 JPH0572095 B2 JP H0572095B2
Authority
JP
Japan
Prior art keywords
molecular beam
temperature
raw material
buffer chamber
beam source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57098084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58215021A (ja
Inventor
Hisatsune Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57098084A priority Critical patent/JPS58215021A/ja
Publication of JPS58215021A publication Critical patent/JPS58215021A/ja
Publication of JPH0572095B2 publication Critical patent/JPH0572095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57098084A 1982-06-08 1982-06-08 分子線源 Granted JPS58215021A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57098084A JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57098084A JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Publications (2)

Publication Number Publication Date
JPS58215021A JPS58215021A (ja) 1983-12-14
JPH0572095B2 true JPH0572095B2 (cs) 1993-10-08

Family

ID=14210474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57098084A Granted JPS58215021A (ja) 1982-06-08 1982-06-08 分子線源

Country Status (1)

Country Link
JP (1) JPS58215021A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115219A (ja) * 1983-11-26 1985-06-21 Anelva Corp 薄膜形成装置用蒸発源セル
FR2572099B1 (fr) * 1984-10-24 1987-03-20 Comp Generale Electricite Generateur de jets moleculaires par craquage thermique pour la fabrication de semi-conducteurs par depot epitaxial

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461464A (en) * 1977-10-25 1979-05-17 Fujitsu Ltd Hot wall epitaxial growing unit
JPS5759127Y2 (cs) * 1978-09-26 1982-12-17

Also Published As

Publication number Publication date
JPS58215021A (ja) 1983-12-14

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