JPH0572644B2 - - Google Patents

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Publication number
JPH0572644B2
JPH0572644B2 JP9912585A JP9912585A JPH0572644B2 JP H0572644 B2 JPH0572644 B2 JP H0572644B2 JP 9912585 A JP9912585 A JP 9912585A JP 9912585 A JP9912585 A JP 9912585A JP H0572644 B2 JPH0572644 B2 JP H0572644B2
Authority
JP
Japan
Prior art keywords
magnetic
soft magnetic
layer
head
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP9912585A
Other languages
Japanese (ja)
Other versions
JPS61258323A (en
Inventor
Kazuhiko Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP9912585A priority Critical patent/JPS61258323A/en
Publication of JPS61258323A publication Critical patent/JPS61258323A/en
Publication of JPH0572644B2 publication Critical patent/JPH0572644B2/ja
Granted legal-status Critical Current

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  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は磁気ヘツドに関し、特に磁気デイスク
装置、磁気テープ装置等からの情報を読出しに用
いられ強磁性薄膜より成る磁気抵抗効果素子(以
下MR素子と呼ぶ)を利用した磁気抵抗効果ヘツ
ド(以下MRヘツドと呼ぶ)に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a magnetic head, and in particular to a magnetoresistive element (hereinafter MR This relates to a magnetoresistive head (hereinafter referred to as an MR head) that utilizes a magnetoresistive head (hereinafter referred to as an MR head).

(従来技術とその問題点) 周知のように強磁性合金薄膜より成るMR素子
は、信号磁界に対する再生感度が高く、しかも磁
束応答型であるため信号出力が相対速度に依存せ
ず、高周波領域まで一定の出力が得られるなど優
れた特徴を備えている。このため磁気記録の分野
では、このように優れた特徴を持つMR素子を高
記録密度再生用ヘツド、所謂MRヘツドとして使
用することが考えられており、種々の検討が活発
に行なわれている。
(Prior art and its problems) As is well known, an MR element made of a ferromagnetic alloy thin film has high reproduction sensitivity to a signal magnetic field, and since it is a magnetic flux responsive type, the signal output does not depend on relative velocity and can be used even in the high frequency range. It has excellent features such as being able to obtain a constant output. Therefore, in the field of magnetic recording, it has been considered that MR elements with such excellent characteristics can be used as heads for high recording density reproduction, so-called MR heads, and various studies are being actively conducted.

この様なMRヘツドは通常、MR素子を絶縁層
を介して、高速磁率磁性薄膜より成る上、下2つ
の磁気シールド間に挿入した構造となつている。
その磁気シールドは、記録媒体上の磁化遷移から
の不要な漏洩磁場を遮断し、MR素子の飽和及び
高調波歪等の混入を抑制する効果、および高密度
記録された媒体からの漏洩磁場を効率良くMR素
子まで引上げる効果を有しており、MRヘツドの
分解能を向上させ、高周波特性を改善する作用を
担つている。
Such an MR head usually has a structure in which an MR element is inserted between an upper and a lower magnetic shield made of a high-speed magnetic thin film through an insulating layer.
The magnetic shield blocks unnecessary leakage magnetic fields from magnetization transitions on the recording medium, suppresses saturation of the MR element and harmonic distortion, and efficiently blocks leakage magnetic fields from high-density recorded media. It has the effect of pulling up to the MR element well, and plays the role of improving the resolution of the MR head and the high frequency characteristics.

従つて、この磁気シールドを形成する材料とし
ては、優れた軟磁気特性を有することが不可欠で
ある。特に、近年の高記録密度化の流れを考える
と、磁気シールド材料に求められる特性は種々大
きくなつており、従来用いられていたNiFe合金
(透磁率μ=1500、保磁力Hc=0.5Oe)に替わる、
より一層優れた特性を持つ材料によつて磁気シー
ルドを構成してその磁気シールドの効果を十分発
揮させることが、MRヘツドにとつて極めて重要
となりつつある。
Therefore, it is essential that the material forming this magnetic shield has excellent soft magnetic properties. In particular, considering the trend toward higher recording densities in recent years, the characteristics required of magnetic shielding materials are increasing, and the conventionally used NiFe alloy (magnetic permeability μ = 1500, coercive force Hc = 0.5 Oe) change,
It is becoming extremely important for MR heads to construct magnetic shields using materials with even better properties and to fully demonstrate the effectiveness of the magnetic shields.

この様な磁気シールド材料の一つとして、非晶
質軟磁性材料、例えばCo−Zr、Co−Zr−Nb等
のCo−メタル系非晶質軟磁性材料が考えられる。
これらのCo−メタル系非晶質材料、例えばCo−
Zr膜は10MHzでも3500という高い透磁率を有し、
しかも0.03Oe以下という小さな保磁力を有して
いるため、従来のNiFe合金より構成される磁気
シールドに比較して格段に優れた磁気シールドが
得られる。しかしながら、この非晶質軟磁性材料
は、熱的に不安定であり、磁気特性の経時変化が
大きく、初期の高い透磁率が次第に低下するとい
う欠点があつた。しかも、MR素子は原理上常時
センス電流をMR素子内に流す必要があり、この
MR素子を挟む磁気シールドは絶えずそのセンス
電流による発熱を受けることとなり、そのため磁
気特性の経時変化が一層加速されるという問題点
があつた。
As one such magnetic shielding material, an amorphous soft magnetic material, for example, a Co-metal type amorphous soft magnetic material such as Co-Zr or Co-Zr-Nb can be considered.
These Co-metal amorphous materials, such as Co-
Zr film has a high magnetic permeability of 3500 even at 10MHz,
Furthermore, since it has a small coercive force of 0.03 Oe or less, it can provide a magnetic shield that is significantly superior to magnetic shields made of conventional NiFe alloys. However, this amorphous soft magnetic material has disadvantages in that it is thermally unstable, its magnetic properties change significantly over time, and its initially high magnetic permeability gradually decreases. Moreover, in principle, the MR element requires a sense current to flow through the MR element at all times;
The problem was that the magnetic shield that sandwiched the MR element was constantly exposed to heat generated by the sense current, which further accelerated the change in magnetic properties over time.

このような磁気特性の劣化は、当然のことなが
ら磁気シールドの効果・作用の低下を意味してお
り、その結果MRヘツドのヘツド特性も低下し、
MRヘツドの信頼性を損なうものであつた。
Such deterioration of magnetic properties naturally means a reduction in the effectiveness and function of the magnetic shield, and as a result, the head characteristics of the MR head also deteriorate.
This damaged the reliability of the MR head.

(発明の目的) 本発明の目的は、これら従来の欠点を除去し、
磁気シールドの特性劣化を制御して、信頼性の高
いMRヘツドを提供することにある。
(Object of the invention) The object of the present invention is to eliminate these conventional drawbacks,
The object of the present invention is to provide a highly reliable MR head by controlling the deterioration of the characteristics of the magnetic shield.

(発明の構成) 本発明の構成は、高透磁率軟磁性薄膜からなる
上、下2つの磁気シールドの間にそれぞれ絶縁層
を介して、強磁性薄膜からなるMR素子を挟んで
形成されるシールド付きMRヘツドにおいて、前
記上、下磁気シールドの少なくとも一方が、非晶
質高透磁率軟磁性材料より成る層と結晶質高透磁
率軟磁性材料より成る層とを各々少なくとも1層
ずつ積層して構成されることを特徴とする。
(Structure of the Invention) The structure of the present invention is that a shield is formed by sandwiching an MR element made of a ferromagnetic thin film between two upper and lower magnetic shields made of a high magnetic permeability soft magnetic thin film, with an insulating layer interposed between them. In the MR head, at least one of the upper and lower magnetic shields is formed by laminating at least one layer each of an amorphous high magnetic permeability soft magnetic material and a crystalline high magnetic permeability soft magnetic material. It is characterized by being configured.

(発明の作用) 本発明の構成をとることにより、磁気シールド
が非晶質軟磁性材料より成る層と結晶質軟磁性材
料より成る層とを少なくとも2層積層した多層膜
により構成されるので、非晶質軟磁性薄膜層と結
晶質軟磁性薄膜層とを磁気的に結合し、磁気シー
ルドの磁気特性の劣化、特に透磁率の低下を抑制
して、信頼性の高い優れたMRヘツドを実現する
ことができる。
(Function of the Invention) By adopting the configuration of the present invention, the magnetic shield is constituted by a multilayer film in which at least two layers are laminated, one layer made of an amorphous soft magnetic material and the other layer made of a crystalline soft magnetic material. By magnetically coupling an amorphous soft magnetic thin film layer and a crystalline soft magnetic thin film layer, we suppress the deterioration of the magnetic properties of the magnetic shield, especially the decrease in magnetic permeability, and realize an excellent, highly reliable MR head. can do.

(実施例) 以下、図面を用いて本発明を詳細に説明する。(Example) Hereinafter, the present invention will be explained in detail using the drawings.

第1図は本発明の一実施例の部分断面斜視図で
ある。本実施例は、ガラス・セラミツクス等より
成る基板11上にスパツタリング法あるいば蒸着
法等の薄膜形成技術とフオトリソグラフイー技術
を用いて下磁気シールド12を形成し(ここでは
スパツタリングを用いた)、ついでスパツタ膜か
らなる絶縁層13を介して、NiFe合金等の強磁
性薄膜よりなるMR素子14を蒸着法により形成
し、このMR素子14にセンス電流を供給する
Au等の導電性材料よりなる端子16が下磁気シ
ールド12と同様の集積化薄膜技術を用いて形成
した(ここではAuを蒸着法で形成した)。その後
再度絶縁層13(ここではSiO2スパツタ膜)が
形成され、ついで下磁気シールド12と同様に上
磁気シールド15が形成されてシールド付きMR
ヘツドが構成されている。
FIG. 1 is a partially sectional perspective view of an embodiment of the present invention. In this embodiment, the lower magnetic shield 12 is formed on a substrate 11 made of glass or ceramics using a thin film forming technique such as sputtering or vapor deposition and photolithography (sputtering was used here). Then, an MR element 14 made of a ferromagnetic thin film such as NiFe alloy is formed by vapor deposition via an insulating layer 13 made of a sputtered film, and a sense current is supplied to this MR element 14.
A terminal 16 made of a conductive material such as Au was formed using the same integrated thin film technology as the lower magnetic shield 12 (here, Au was formed by vapor deposition). After that, an insulating layer 13 (in this case, a SiO 2 sputtered film) is formed again, and then an upper magnetic shield 15 is formed in the same way as the lower magnetic shield 12, and the shielded MR
The head is configured.

ここで上、下両磁気シールド15,12は、第
2図に示したような構造となつている。すなわ
ち、膜厚500ÅのNiFe合金より成る結晶質軟磁性
層18を4層と、膜厚3000ÅのCoZr非晶質軟磁
性層17を3層とを交互に積み重ねた軟磁性積層
膜によつて上、下両磁気シールド15,12が構
成される。
Here, both the upper and lower magnetic shields 15, 12 have a structure as shown in FIG. That is, a soft magnetic laminated film is formed by alternately stacking four crystalline soft magnetic layers 18 made of NiFe alloy with a thickness of 500 Å and three layers of CoZr amorphous soft magnetic layers 17 with a thickness of 3000 Å. , lower magnetic shields 15 and 12 are constructed.

この積層膜の作製時には、結晶質軟磁性層18
と非晶質軟磁性層17との磁気的な結合を実現す
るために、結晶質、非晶質軟磁性層18,17の
各磁化容易軸が同一方向となる様に、磁場中成膜
を行なうことが望ましい。この積層膜は、磁気シ
ールド材料として必須の優れた軟磁気特性を有し
ていた。つまり、保磁力Hc=0.03〜0.05Oe、透
磁率μ=2500〜3000という従来の磁気シールド材
料、例えばNiFe合金の特性を遥かに凌ぐ軟磁気
特性を有していた。
When manufacturing this laminated film, the crystalline soft magnetic layer 18
In order to achieve magnetic coupling between the crystalline and amorphous soft magnetic layers 17, the films are formed in a magnetic field so that the easy magnetization axes of the crystalline and amorphous soft magnetic layers 18 and 17 are in the same direction. It is desirable to do so. This laminated film had excellent soft magnetic properties that are essential as a magnetic shielding material. In other words, it had soft magnetic properties far exceeding those of conventional magnetic shielding materials, such as NiFe alloys, with coercive force Hc = 0.03 to 0.05 Oe and magnetic permeability μ = 2500 to 3000.

第3図は第1図の本発明によるMRヘツドの磁
気シールドとなる第2図のCoZr/NiFe積層膜の
CoZr単層膜(膜厚10000Å)とを80℃の大気中に
放置した時の透磁率の経時変化の様子を示すグラ
フである。この図において、実線は膜構成を有す
る本発明による軟磁性多層膜の経時変化を示して
おり、破線はCoZr単層膜の経時変化を示してい
る。ここで横軸は処理時間、つまり80℃の大気中
に放置した時間を対数目盛りで示し、縦軸は処理
前の透磁率μ0で、t時間後の透磁率μ(t)を規格化
して示してある。なお透磁率の測定としては、雑
誌「レビユー・オブ・サイエンテイフイツク・イ
ンストルメント(Review of Scientific
Instruments)」の第46巻(1975年)の904頁に示
された方法を用いた。すなわち、8字形に形成し
た薄膜コイルの下部に供試サンプルを挿入し、磁
界印加用の他のコイルにより、その供試サンプル
を励磁した時、8字形コイルに鎖交する磁束量か
ら求めた磁束密度と、その励磁磁界との比から透
磁率を求める方法により行なつた。又、この透磁
率の測定周波数は5MHzである。
Figure 3 shows the CoZr/NiFe laminated film shown in Figure 2, which serves as the magnetic shield for the MR head according to the present invention shown in Figure 1.
It is a graph showing the change in magnetic permeability over time when a CoZr single layer film (thickness: 10,000 Å) is left in the atmosphere at 80°C. In this figure, the solid line shows the change over time of the soft magnetic multilayer film according to the present invention having a film structure, and the broken line shows the change over time of the CoZr single layer film. Here, the horizontal axis shows the processing time, that is, the time left in the atmosphere at 80°C on a logarithmic scale, and the vertical axis shows the magnetic permeability μ 0 before treatment, and the magnetic permeability μ(t) after t hours is normalized. It is shown. For measuring magnetic permeability, please refer to the magazine ``Review of Scientific Instruments''.
46 (1975), p. 904 of ``Instruments'', Vol. 46 (1975), page 904 was used. In other words, when a test sample is inserted into the lower part of a thin film coil formed in a figure 8 shape and the test sample is excited by another coil for applying a magnetic field, the magnetic flux determined from the amount of magnetic flux interlinking with the figure 8 coil. This was done by calculating the magnetic permeability from the ratio of the density and the excitation magnetic field. Moreover, the measurement frequency of this magnetic permeability is 5MHz.

第3図から明らかな如く、本発明による
CoZr/NiFe積層膜の透磁率の低下は、単層膜に
比較して小さい。例えば、1000時間経過後では、
単層膜の透磁率は初期値の約65%にも低下し大き
な経時変化を示しているが、本発明による積層膜
においては約20%の減少にとどまつており、透磁
率の経時変化が大幅に改善されている。
As is clear from FIG. 3, according to the present invention
The decrease in magnetic permeability of the CoZr/NiFe laminated film is smaller than that of a single-layer film. For example, after 1000 hours,
The magnetic permeability of a single-layer film decreases to about 65% of its initial value, showing a large change over time, but in the multilayer film of the present invention, the decrease is only about 20%, indicating that the change in magnetic permeability over time is significant. has been improved.

すなわち、1000時間後の透磁率の減少率Dを次
式のように定義する。
That is, the rate of decrease in magnetic permeability D after 1000 hours is defined as the following equation.

D=μ0−μ1000/μ0×100(%) ここで、μ0、μ1000は各々透磁率の初期値、
1000時間後の透磁率を示す。この場合、単層膜、
積層膜の減少率D1、D2は各々次式となる。
D=μ 0 − μ 1000 / μ 0 ×100 (%) Here, μ 0 and μ 1000 are the initial values of magnetic permeability, respectively,
Shows magnetic permeability after 1000 hours. In this case, a single layer film,
The reduction rates D 1 and D 2 of the laminated film are each expressed by the following equations.

D1=35(%)、D2=20(%) 経時変化による減少量は本発明により35%から
20%へと改善される。
D 1 = 35 (%), D 2 = 20 (%) The amount of decrease due to changes over time is reduced from 35% by the present invention.
improved to 20%.

以上の様に本発明によるMRヘツドの磁気シー
ルドは、優れた軟磁気特性、すなわち高い透磁率
と小さな保磁力を持ち、しかも磁気特性の経時変
化も少なく、磁気シールドの効果・作用の低下を
抑制できるため、優れた特性とを有すると共に高
い信頼性が得られる。
As described above, the magnetic shield of the MR head according to the present invention has excellent soft magnetic properties, that is, high magnetic permeability and small coercive force, and there is little change in magnetic properties over time, suppressing the deterioration of the effectiveness and operation of the magnetic shield. Therefore, it has excellent characteristics and high reliability.

更に、非晶質軟磁性層17と、結晶質軟磁性層
18とが互いに磁気的に結合しているため、磁気
シールドの磁区構造が安定化するという効果もあ
り、磁気シールドとMR素子との相互作用が安定
で再現性のよいものとなるので、この点からも信
頼性の高いMRヘツドが得られる。
Furthermore, since the amorphous soft magnetic layer 17 and the crystalline soft magnetic layer 18 are magnetically coupled to each other, the magnetic domain structure of the magnetic shield is stabilized, and the interaction between the magnetic shield and the MR element is improved. Since the interaction is stable and reproducible, a highly reliable MR head can be obtained from this point as well.

なお、第2図の横層膜の構成は一例にすぎず、
各層の膜厚、各層の構成材料は各MRヘツドの仕
様に応じて選定されるべきものである。また、本
実施例では結晶質軟磁性層を、まず基板上に形成
した例を示したが、非晶質軟磁性層を先に基板上
に形成してもかまわず、また結晶質軟磁性層と非
晶質軟磁性層とを各々一層づつ形成した構成でも
よい。
Note that the configuration of the horizontal layer film in FIG. 2 is only an example.
The film thickness of each layer and the constituent material of each layer should be selected according to the specifications of each MR head. Furthermore, although this example shows an example in which the crystalline soft magnetic layer is first formed on the substrate, it is also possible to form the amorphous soft magnetic layer on the substrate first, or the crystalline soft magnetic layer may be formed on the substrate first. A configuration in which one layer and one amorphous soft magnetic layer are formed is also acceptable.

(発明の効果) 以上の述べたように、本発明のMRヘツドにお
いては、磁気シールドが優れた軟磁気特性を有
し、しかも経時変化が大幅に改善され、また磁気
シールドの磁区構造も安定化されるので、磁気シ
ールドとMR素子の相互作用が安定で再現性が良
く、信頼性の高いMRヘツドを実現できる。
(Effects of the Invention) As described above, in the MR head of the present invention, the magnetic shield has excellent soft magnetic properties, and the change over time is significantly improved, and the magnetic domain structure of the magnetic shield is also stabilized. As a result, the interaction between the magnetic shield and the MR element is stable and reproducible, making it possible to realize a highly reliable MR head.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のMRヘツドの構成
を示す断面斜視図、第2図は第1図中の上、下磁
気シールドの構造を示す断面図、第3図は磁気シ
ールドとなる積層膜の透磁率の経時変化を示すグ
ラフである。 図において、11……基板、12……下シール
ド、14……MR素子、15……上シールド、1
7……非晶質軟磁性層、18……結晶質軟磁性層
である。
Fig. 1 is a cross-sectional perspective view showing the structure of an MR head according to an embodiment of the present invention, Fig. 2 is a cross-sectional view showing the structure of the upper and lower magnetic shields in Fig. 1, and Fig. 3 is the magnetic shield. It is a graph showing a change in magnetic permeability of a laminated film over time. In the figure, 11...substrate, 12...lower shield, 14...MR element, 15...upper shield, 1
7...Amorphous soft magnetic layer, 18...Crystalline soft magnetic layer.

Claims (1)

【特許請求の範囲】[Claims] 1 高透磁率軟磁性薄膜からなる上、下2つの磁
気シールドの間にそれぞれ絶縁層を介して、強磁
性薄膜より成る磁気抵抗効果素子を挾んで形成さ
れるシールド付き磁気抵抗効果ヘツドにおいて、
前記上、下磁気シールドの少なくとも一方が、非
晶質高透磁率軟磁性材料より成る層と結晶質高透
磁率軟磁性材料より成る層とを各々少なくとも1
層づつ積層して構成されることを特徴とする磁気
抵抗効果ヘツド。
1. In a shielded magnetoresistive head formed by sandwiching a magnetoresistive element made of a ferromagnetic thin film between two upper and lower magnetic shields made of a high magnetic permeability soft magnetic thin film, each with an insulating layer interposed therebetween,
At least one of the upper and lower magnetic shields includes at least one layer each made of an amorphous high permeability soft magnetic material and at least one layer made of a crystalline high permeability soft magnetic material.
A magnetoresistive head characterized by being constructed by laminating layers.
JP9912585A 1985-05-10 1985-05-10 Magneto-resistance effect head Granted JPS61258323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9912585A JPS61258323A (en) 1985-05-10 1985-05-10 Magneto-resistance effect head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9912585A JPS61258323A (en) 1985-05-10 1985-05-10 Magneto-resistance effect head

Publications (2)

Publication Number Publication Date
JPS61258323A JPS61258323A (en) 1986-11-15
JPH0572644B2 true JPH0572644B2 (en) 1993-10-12

Family

ID=14239040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9912585A Granted JPS61258323A (en) 1985-05-10 1985-05-10 Magneto-resistance effect head

Country Status (1)

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JP (1) JPS61258323A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63223189A (en) * 1987-03-13 1988-09-16 Nippon Shokubai Kagaku Kogyo Co Ltd Production of ceric nitrate solution
JPS63223190A (en) * 1987-03-13 1988-09-16 Nippon Shokubai Kagaku Kogyo Co Ltd Production of ceric nitrate solution
JPH06259729A (en) * 1993-03-03 1994-09-16 Tdk Corp Magnetic head
JP3388685B2 (en) * 1996-04-01 2003-03-24 ティーディーケイ株式会社 Magnetic head
JP3090254B2 (en) * 1996-09-06 2000-09-18 ティーディーケイ株式会社 Thin film magnetic head
JPH10162322A (en) 1996-11-28 1998-06-19 Nec Corp Magnetoresistance effect type composite head and its manufacture
JP3946404B2 (en) * 2000-03-14 2007-07-18 株式会社日立グローバルストレージテクノロジーズ Magnetoresistive head and magnetic recording / reproducing apparatus using the same
GB2379323B (en) * 2000-05-25 2003-12-24 Seagate Technology Llc Shield design for magnetoresistive sensor
JP3659898B2 (en) * 2000-11-27 2005-06-15 Tdk株式会社 Thin film magnetic head and manufacturing method thereof
JP2007242786A (en) * 2006-03-07 2007-09-20 Tdk Corp CPP type magnetoresistive effect element

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Publication number Publication date
JPS61258323A (en) 1986-11-15

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