JPH0573720B2 - - Google Patents
Info
- Publication number
- JPH0573720B2 JPH0573720B2 JP17724285A JP17724285A JPH0573720B2 JP H0573720 B2 JPH0573720 B2 JP H0573720B2 JP 17724285 A JP17724285 A JP 17724285A JP 17724285 A JP17724285 A JP 17724285A JP H0573720 B2 JPH0573720 B2 JP H0573720B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon nitride
- quartz crucible
- silicon
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は低酸素濃度でシリコン単結晶を引上げ
るルツボに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a crucible for pulling silicon single crystals at low oxygen concentrations.
一般に、CZ法において、シリコン単結晶は石
英ルツボ内でシリコンを溶融し、種結晶を用いて
引上げられている。この場合、一般に知られてい
るように石英ガラスの一部が溶融シリコンに溶解
し、酸素がシリコン単結晶中に混入し、シリコン
単結晶からなる半導体素子の電気的特性を著しく
悪くする。このシリコン単結晶中に混入する酸素
濃度は融液シリコンと石英ルツボとの接触面積、
温度、対流の大きさ等によつて決まり、これによ
る品質管理の改善が要望されていたが、これらの
条件のコントロールは極めて困難である。
Generally, in the CZ method, silicon single crystals are melted in a quartz crucible and pulled using a seed crystal. In this case, as is generally known, a portion of the quartz glass dissolves in the molten silicon, and oxygen mixes into the silicon single crystal, significantly deteriorating the electrical characteristics of the semiconductor element made of the silicon single crystal. The oxygen concentration mixed into this silicon single crystal is determined by the contact area between the molten silicon and the quartz crucible.
It is determined by temperature, the size of convection, etc., and there has been a desire to improve quality control based on this, but it is extremely difficult to control these conditions.
このために、最近、第２図に示すように石英ル
ツボ１の内面に化学的蒸着法（CVD法）によつ
て窒化珪素（Si3N4）膜７を被覆し、酸素混入を
防止する石英ルツボが開発されている。しかし、
このように窒化珪素膜７を石英ルツボ１の内面に
CVD法により一体化して設けたCVD（Si3N4）膜
石英ルツボでは、大きい単結晶を作るために大口
径のルツボとするとSi3N4蒸着膜（熱膨張係数2.8
×10-6〔deg-1〕（1000℃）と石英ルツボ（熱膨張
係数5.0×10-7〔deg-1〕（1000℃）との熱膨張の差
により、特にルツボ底部の湾曲部Ｒ、すなわち、
円筒部と平坦底部との連結部に亀裂や膜剥離が生
じ、単結晶の引上げを困難にする。 For this purpose, recently, as shown in Fig. 2, the inner surface of the quartz crucible 1 is coated with a silicon nitride (Si 3 N 4 ) film 7 by chemical vapor deposition (CVD) to prevent oxygen from entering the quartz crucible. A crucible is being developed. but,
In this way, the silicon nitride film 7 is coated on the inner surface of the quartz crucible 1.
In a quartz crucible with a CVD (Si 3 N 4 ) film integrated by the CVD method, if a crucible with a large diameter is used to make a large single crystal, the Si 3 N 4 evaporated film (thermal expansion coefficient 2.8)
Due to the difference in thermal expansion between ×10 -6 [deg -1 ] (1000℃) and the quartz crucible (thermal expansion coefficient 5.0 × 10 -7 [deg -1 ] (1000℃)), the curved part R at the bottom of the crucible That is,
Cracks and film peeling occur at the connection between the cylindrical part and the flat bottom part, making it difficult to pull the single crystal.
本発明は上述する問題点に着目し、石英ルツボ
内壁に窒化珪素保護膜を一体化せずに設置したこ
とにより、一体化形成したCVD窒化珪素膜の機
械的強度の一番弱い底部湾曲部Ｒに亀裂や膜剥離
の起さない優れたシリコン単結晶引上げ用ルツボ
を提供するものである。
The present invention focuses on the above-mentioned problems, and by installing a silicon nitride protective film on the inner wall of a quartz crucible without integrating it, the bottom curved portion R where the mechanical strength of the integrally formed CVD silicon nitride film is the weakest. The present invention provides an excellent crucible for pulling silicon single crystals that does not cause cracks or film peeling.
本発明者らは前記目的を達成すべく幾多の研究
の結果、機械的に、かつ熱的に強いCVD窒化珪
素（Si3N4）円筒体および底板からなるCVD窒化
珪素保護壁を石英ルツボ内部に設置したことによ
り優れたシリコン単結晶引上げ用ルツボを開発
し、本発明に到達した。
In order to achieve the above object, the present inventors conducted numerous studies and found that a CVD silicon nitride protective wall consisting of a mechanically and thermally strong CVD silicon nitride (Si 3 N 4 ) cylindrical body and a bottom plate was installed inside a quartz crucible. The present invention was achieved by developing an excellent crucible for pulling silicon single crystals by installing the crucible in
本発明のシリコン単結晶引上げ用ルツボは、石
英ルツボ内の円筒部下端に窒化珪素底板を設置
し、かつ円筒部内壁に窒化珪素円筒体を設置した
ことを特徴とする。 The silicon single crystal pulling crucible of the present invention is characterized in that a silicon nitride bottom plate is installed at the lower end of the cylinder inside the quartz crucible, and a silicon nitride cylindrical body is installed on the inner wall of the cylinder part.
本発明に係るルツボは第１図に示すように石英
ルツボ１の円筒部１ａの内壁面にCVD窒化珪素
（Si3N4）円筒体２を設置する。この円筒体２は
円筒部１ａの内壁に密接に挿着できるように円筒
部１ａの内径にほぼ等しい外径を有し、かつ円筒
体２の長さは円筒部１ａの長さの±10％程度の増
減が認められる。
In the crucible according to the present invention, as shown in FIG. 1, a CVD silicon nitride (Si 3 N 4 ) cylindrical body 2 is installed on the inner wall surface of a cylindrical portion 1a of a quartz crucible 1. This cylindrical body 2 has an outer diameter approximately equal to the inner diameter of the cylindrical part 1a so that it can be closely inserted into the inner wall of the cylindrical part 1a, and the length of the cylindrical body 2 is ±10% of the length of the cylindrical part 1a. Increases and decreases in degree are observed.
更に、円筒体２の下部端面４に接して平坦な
CVD窒化珪素（Si3N4）底板３を設置して円筒体
２の底を形成する。この底板３は円筒体２の下部
端面４とルツボ底部の湾曲内面とで緊締保持す
る。このようにして石英ルツボ１の内部に円筒体
２と底板３からなるCVD窒化珪素保護壁を石英
ルツボ１と非一体的に内設する。 Furthermore, a flat surface is formed in contact with the lower end surface 4 of the cylindrical body 2.
A CVD silicon nitride (Si 3 N 4 ) bottom plate 3 is installed to form the bottom of the cylinder 2 . This bottom plate 3 is tightly held by the lower end surface 4 of the cylindrical body 2 and the curved inner surface of the bottom of the crucible. In this way, the CVD silicon nitride protective wall consisting of the cylindrical body 2 and the bottom plate 3 is installed inside the quartz crucible 1 non-integrally with the quartz crucible 1.
操作中、底板３とルツボ底部との空間６には円
筒体２と底板３との接触部から融液が若干漏れて
空間６内に流入することがあつても、この空間６
から融液がルツボ内部に逆流することが殆んどな
いので悪影響をもたらすことがない。 During operation, even if some melt leaks into the space 6 between the bottom plate 3 and the bottom of the crucible from the contact area between the cylindrical body 2 and the bottom plate 3 and flows into the space 6, this space 6
Since the melt rarely flows back into the crucible, it does not cause any adverse effects.
上記CVD窒化珪素円筒体２および底板３は
CVD法によりカーボンの円筒又は円板の表面に
窒化珪素膜を形成した後、カーボンを加熱酸化処
理して除去し、窒化珪素膜の裏面にCVD法によ
り再度窒化珪素膜を形成して製作したもの、ある
いは窒化珪素（Si3N4）焼結体の円筒又は円板の
表面にCVD法により窒化珪素被膜を形成して製
作したものである。 The above CVD silicon nitride cylinder 2 and bottom plate 3 are
Manufactured by forming a silicon nitride film on the surface of a carbon cylinder or disk using the CVD method, removing the carbon by heating and oxidizing it, and forming a silicon nitride film again on the back side of the silicon nitride film using the CVD method. Alternatively, it is manufactured by forming a silicon nitride film on the surface of a cylinder or disk of a silicon nitride (Si 3 N 4 ) sintered body by a CVD method.
なお、ルツボの用途、すなわちシリコン単結晶
中に混入する酸素濃度によつては、円板３のみを
用いてもよい。 Note that, depending on the use of the crucible, that is, the concentration of oxygen mixed in the silicon single crystal, only the disk 3 may be used.
上述するように、本発明は石英ルツボ内壁に窒
化珪素円筒体および底板からなる窒化珪素保護壁
を非一体的に設置したことによつて、従来の
CVD法で石英ルツボに一体化して蒸着形成した
窒化珪素膜において生じた亀裂や膜剥離を殆んど
完全に防止でき、結晶中への酸素の混入を防止す
ることができた。
As described above, the present invention has a silicon nitride protection wall made of a silicon nitride cylinder and a bottom plate installed non-integrally on the inner wall of a quartz crucible, thereby improving the conventional method.
It was possible to almost completely prevent cracks and film peeling that occurred in the silicon nitride film that was integrally deposited in a quartz crucible using the CVD method, and it was also possible to prevent oxygen from entering the crystal.
第１図は本発明に係るシリコン単結晶引上げ用
ルツボの断面図、第２図は従来の石英ルツボの断
面図である。
１……石英ルツボ、１ａ……石英ルツボの円筒
部、２……窒化珪素円筒体、３……窒化珪素底
板、４……円筒体の下部端面、５……融液シリコ
ン、６……空間。
FIG. 1 is a sectional view of a crucible for pulling a silicon single crystal according to the present invention, and FIG. 2 is a sectional view of a conventional quartz crucible. DESCRIPTION OF SYMBOLS 1... Quartz crucible, 1a... Cylindrical part of quartz crucible, 2... Silicon nitride cylinder, 3... Silicon nitride bottom plate, 4... Lower end surface of cylinder, 5... Molten silicon, 6... Space .
Claims (1)
設置し、かつ円筒部の内壁に窒素珪素円筒体を設
置したことを特徴とするシリコン単結晶引上げ用
ルツボ。1. A crucible for pulling silicon single crystals, characterized in that a silicon nitride bottom plate is installed at the lower end of the cylinder inside the quartz crucible, and a nitrogen silicon cylinder is installed on the inner wall of the cylinder part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724285A JPS6241793A (en) | 1985-08-12 | 1985-08-12 | Crucible for pulling up silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724285A JPS6241793A (en) | 1985-08-12 | 1985-08-12 | Crucible for pulling up silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6241793A JPS6241793A (en) | 1987-02-23 |
| JPH0573720B2 true JPH0573720B2 (en) | 1993-10-14 |
Family
ID=16027635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17724285A Granted JPS6241793A (en) | 1985-08-12 | 1985-08-12 | Crucible for pulling up silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6241793A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4781232B2 (en) * | 2006-11-07 | 2011-09-28 | コバレントマテリアル株式会社 | Silicon melting crucible used in the manufacture of polycrystalline silicon blocks |
| CN118109895B (en) * | 2024-04-30 | 2024-08-13 | 安徽壹石通材料科技股份有限公司 | Silicon nitride/fused quartz composite crucible and preparation method and application thereof |
-
1985
- 1985-08-12 JP JP17724285A patent/JPS6241793A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6241793A (en) | 1987-02-23 |
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