JPH0574324A - Electron tube cathode - Google Patents
Electron tube cathodeInfo
- Publication number
- JPH0574324A JPH0574324A JP23180791A JP23180791A JPH0574324A JP H0574324 A JPH0574324 A JP H0574324A JP 23180791 A JP23180791 A JP 23180791A JP 23180791 A JP23180791 A JP 23180791A JP H0574324 A JPH0574324 A JP H0574324A
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- Prior art keywords
- electron
- cathode
- layer
- emitting material
- average particle
- Prior art date
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- Electrodes For Cathode-Ray Tubes (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
(57)【要約】
【目的】 受像管用電子銃の陰極からの熱電子放射角度
（エミッタンス）向上および電子放射物質層と第１グリ
ッドとの放電頻度の低減をはかること。
【構成】 従来、１層で陰極基体２２の上に被着形成し
ていた電子放射物質２１を、第１層１１と第２層１２の
２層に分けて構成し、とくに、第１層１１側の電子放射
物質の平均粒径を、第２層１２側の電子放射物質の平均
粒径よりも小さくし、電子放射物質層表面の平面度を改
善したものである。
【効果】 熱電子放射角度（エミッタンス）が小さくな
り、受像管の解像度が向上するとともに、第１グリッド
との放電頻度も低減し、信頼性が向上する。
(57) [Abstract] [Purpose] To improve the thermionic emission angle (emittance) from the cathode of an electron gun for a picture tube and reduce the frequency of discharge between the electron emitting material layer and the first grid. [Structure] An electron-emitting substance 21 which is conventionally formed on a cathode substrate 22 by a single layer is divided into two layers, a first layer 11 and a second layer 12, and particularly, the first layer 11 is formed. The average particle diameter of the electron-emitting substance on the side is made smaller than the average particle diameter of the electron-emitting substance on the side of the second layer 12 to improve the flatness of the surface of the electron-emitting substance layer. [Effect] The thermionic emission angle (emittance) is reduced, the resolution of the picture tube is improved, the frequency of discharge with the first grid is reduced, and the reliability is improved.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、受像管等に具備され
る陰極に関し、とくに、陰極から放出される電子のエミ
ッタンスを向上させ、さらに、陰極と第１格子電極との
放電を低減させ、陰極損傷に対する信頼性の向上をはか
った電子管陰極に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cathode provided in a picture tube or the like, and more particularly to improving the emittance of electrons emitted from the cathode and further reducing the discharge between the cathode and the first grid electrode. The present invention relates to an electron tube cathode with improved reliability against cathode damage.
【０００２】[0002]
【従来の技術】図３は従来の受像管に用いられる電子銃
を模式的に示す図であり、同図で示す受像管用電子銃３
には、ヒータビードストラップ３１、陰極保持部３２、
第１グリッド３３、第２グリッド３４、第３グリッド３
５、第４グリッド３６が順次、配設され、ビードガラス
３７によって上記した各部品間の間隔が所定寸法となる
ように規制されて固定されている。2. Description of the Related Art FIG. 3 is a diagram schematically showing an electron gun used in a conventional picture tube, and the picture tube electron gun 3 shown in FIG.
Includes a heater bead strap 31, a cathode holding portion 32,
First grid 33, second grid 34, third grid 3
The fifth and fourth grids 36 are sequentially arranged, and are fixed and fixed by the bead glass 37 so that the intervals between the above-mentioned components have predetermined dimensions.
【０００３】また、陰極保持部３２には、その平面部開
口に貫通して略円筒状の陰極支持体３８が配設されてお
り、この陰極支持体３８の内部には、一端が開口し、他
端が閉口した略円筒状の陰極構体２が挿入固定されてい
る。Further, the cathode holding portion 32 is provided with a substantially cylindrical cathode support 38 penetrating through the opening of the flat surface thereof, and one end is opened inside the cathode support 38. A substantially cylindrical cathode assembly 2 having the other end closed is inserted and fixed.
【０００４】さらに、複数個のヒータビードストラップ
３１には、ヒータコネクタ３９が溶接固定されており、
ヒータ３０１はヒータタブ３０２を介してヒータコネク
タ３９に接続されている。Further, a heater connector 39 is welded and fixed to the plurality of heater bead straps 31,
The heater 301 is connected to the heater connector 39 via the heater tab 302.
【０００５】つぎに、上記電子銃３の構成部材である陰
極構体２の構成を、図２により具体的に説明する 。図
２は従来の陰極構体を模式的に示す拡大断面図であり、
同図において、２２はＮｉを主成分とし、微量のＳｉ，
Ｍｇ等の還元剤を含んだ陰極基体、２３はこの陰極基体
２２に接合された陰極スリーブである。Next, the structure of the cathode assembly 2 which is a constituent member of the electron gun 3 will be specifically described with reference to FIG. FIG. 2 is an enlarged sectional view schematically showing a conventional cathode assembly,
In the figure, 22 is mainly composed of Ni and contains a small amount of Si,
A cathode substrate containing a reducing agent such as Mg, and 23 is a cathode sleeve joined to the cathode substrate 22.
【０００６】また、２１は上記陰極基体２２の上に被着
形成された電子放射物質層で、この電子放射物質層２１
は、まず、アルカリ土類金属の三元系炭酸塩（Ｂａ／Ｓ
ｒ／Ｃａ）ＣＯ3 と酢酸ブチル等の有機溶剤とニトロセ
ロースからなるバインダを混合して調整した懸濁液を、
スプレー等の噴霧手段によって、陰極基体２２の頂部
に、８０〜１００μｍの厚さで被着形成したものであ
る。Reference numeral 21 denotes an electron emitting material layer deposited and formed on the cathode substrate 22.
First, the alkaline earth metal ternary carbonate (Ba / S
r / Ca) CO 3 and an organic solvent such as butyl acetate, and a suspension prepared by mixing a binder made of nitrocerose,
It is formed by depositing a thickness of 80 to 100 μm on the top of the cathode substrate 22 by a spraying means such as a spray.
【０００７】なお、上記の電子放射物質層２１を構成し
ている三元系炭酸塩（Ｂａ／Ｓｒ／Ｃａ）ＣＯ3 は、一
般的に、平均粒径５μｍ以上であり、このため、電子放
射物質層２１の全層にわたって均一な多孔質構造となっ
ている。The ternary carbonate (Ba / Sr / Ca) CO 3 constituting the electron-emitting substance layer 21 generally has an average particle size of 5 μm or more, and therefore the electron emission is The material layer 21 has a uniform porous structure over all layers.
【０００８】このように構成された陰極構体２を備えた
電子銃３は、受像管のガラスバルブ内の所定部位に装着
されたのち、排気工程、活性化工程を順次、施される。The electron gun 3 having the cathode assembly 2 thus constructed is mounted on a predetermined portion of the glass bulb of the picture tube, and then subjected to an exhausting step and an activating step in sequence.
【０００９】つぎに、排気工程について説明する。な
お、ここでは、電子放射物質層２１を構成しているアル
カリ土類金属の炭酸塩のうち、炭酸バリウム（ＢａＣＯ
3 ）について説明する。Next, the exhaust process will be described. Here, among the carbonates of the alkaline earth metals forming the electron emitting material layer 21, barium carbonate (BaCO) is used.
3 ) will be explained.
【００１０】まず、排気工程中に、ヒータ３０１に通電
し、陰極基体２２が加熱されることにより、下記の化学
反応式（Ｉ）のように、炭酸バリウム（ＢａＣＯ3 ）は
酸化バリウム（ＢａＯ）と炭酸ガス（ＣＯ2 ）に分解
し、このときに発生する炭酸ガス（ＣＯ2 ）はガラスバ
ルブ外へ排気される。First, during the exhaust process, the heater 301 is energized to heat the cathode substrate 22, so that barium carbonate (BaCO 3 ) is converted into barium oxide (BaO) as shown in the following chemical reaction formula (I). decomposed into carbon dioxide (CO 2) and carbon dioxide (CO 2) generated at this time is exhausted to the outside of the glass bulb.
【００１１】ＢａＣＯ3 →ＢａＯ＋ＣＯ2 …（Ｉ）BaCO 3 → BaO + CO 2 (I)
【００１２】つづいて、活性化工程について説明する。
生成した酸化バリウム（ＢａＯ）と微量のＳｉ，Ｍｇ等
の還元剤を含んだ陰極基体２２はヒータ３０１の通電に
よる加熱により反応し、下記化学反応式（II）と（III)
によって明らかなように、遊離バリウム（Ｂａ）を生成
する。Next, the activation process will be described.
The generated barium oxide (BaO) and the cathode substrate 22 containing a small amount of a reducing agent such as Si, Mg react by heating by energizing the heater 301, and the following chemical reaction formulas (II) and (III)
Free barium (Ba) is produced as evidenced by.
【００１３】ＢａＯ＋Ｍｇ→Ｂａ＋ＭｇＯ …（II） ＢａＯ＋Ｓｉ→２Ｂａ＋Ｂａ2 ＳｉＯ4 …（III ）BaO + Mg → Ba + MgO (II) BaO + Si → 2Ba + Ba 2 SiO 4 (III)
【００１４】つぎに、上記構成による受像管の動作につ
いて説明する。動作時には、陰極基体２２はヒータ３０
１の通電により、約８００℃に加熱され、生成した遊離
バリウム（Ｂａ）から熱電子を放出する。この熱電子は
第１グリッド３３および第２グリッド３４によって制
御、加速され、第３グリッド３５および第４グリッド３
６によって形成される電界レンズで集束し、蛍光面の微
小面積を発光させる。Next, the operation of the picture tube having the above construction will be described. During operation, the cathode substrate 22 is heated by the heater 30.
When the current is applied for 1 to heat up to about 800 ° C., the generated free barium (Ba) emits thermoelectrons. The thermoelectrons are controlled and accelerated by the first grid 33 and the second grid 34, and the third grid 35 and the fourth grid 3
It is focused by the electric field lens formed by 6, and the minute area of the fluorescent screen is made to emit light.
【００１５】このようにして組み立てられた受像管にお
いて、蛍光面の発光面積は通常、第３グリッド３５およ
び第４グリッド３６によって形成される電界レンズの集
束度合が関係するが、電界レンズに収差があるため、電
界レンズに入る熱電子が電界レンズの中心から離れてい
る場合、蛍光面の発光面積が大きくなって解像度が悪く
なるという不都合がある。In the picture tube thus assembled, the light emitting area of the fluorescent screen is usually related to the degree of focusing of the electric field lens formed by the third grid 35 and the fourth grid 36, but the electric field lens has aberrations. Therefore, when the thermoelectrons entering the electric field lens are far from the center of the electric field lens, there is a disadvantage that the light emitting area of the phosphor screen becomes large and the resolution deteriorates.
【００１６】つまり、電界レンズ上での入射電子の面積
が大きい場合である。この面積は、一般的には、電子放
射物質層２１の表面からの熱電子放射角度（エミッタン
ス）および第１グリッド３３と第２グリッド３４によっ
て形成される弱い電界レンズの集束度合の２者で決定さ
れる。That is, this is the case where the area of incident electrons on the electric field lens is large. This area is generally determined by two factors, that is, the thermionic emission angle (emittance) from the surface of the electron emitting material layer 21 and the focusing degree of the weak electric field lens formed by the first grid 33 and the second grid 34. To be done.
【００１７】ここで、とくに、電子放射物質層２１の表
面からの熱電子放射角度（エミッタンス）を考えてみた
場合、この熱電子放射角度（エミッタンス）は、電子放
射物質層２１の表面の平面度、つまり、電子放射物質層
２１を形成するアルカリ土類金属酸化物結晶粒子の粒
径、形状、多孔度等によって決定され、電子放射物質層
２１表面の平面度、つまり、その表面の凹凸起伏が大き
い場合には、熱電子放射角度（エミッタンス）は悪くな
る。Here, in particular, considering the thermionic emission angle (emittance) from the surface of the electron emitting material layer 21, this thermionic emission angle (emittance) is the flatness of the surface of the electron emitting material layer 21. That is, it is determined by the particle size, shape, porosity and the like of the alkaline earth metal oxide crystal particles forming the electron emitting material layer 21, and the flatness of the surface of the electron emitting material layer 21, that is, the unevenness of the surface If it is large, the thermionic emission angle (emittance) becomes worse.
【００１８】[0018]
【発明が解決しようとする課題】通常、電子放射物質層
２１を形成するアルカリ土類金属酸化物の結晶粒子は、
平均粒径が５μｍ以上であり、電子放射物質層２１の全
層にわたって均一な多孔質構造となっているため、電子
放射物質層２１の表面の平面度は悪く、熱電子放射角度
（エミッタンス）が大きくなってしまい、解像度の劣化
を引き起こす。Usually, the crystal particles of the alkaline earth metal oxide forming the electron emitting material layer 21 are
Since the average particle diameter is 5 μm or more and the electron emitting material layer 21 has a uniform porous structure over the entire layer, the surface flatness of the electron emitting material layer 21 is poor and the thermionic emission angle (emittance) is small. It becomes large and causes deterioration of resolution.
【００１９】一方、電子放射物質層２１の表面の平面度
が悪い場合、電子放射物質層２１表面の凸部と第１グリ
ッド３３間での放電による電子放射物質層２１の破壊も
誘発し、電子放射の劣化を引き起こすため、信頼性の点
で課題を残している。On the other hand, when the flatness of the surface of the electron emitting material layer 21 is poor, destruction of the electron emitting material layer 21 due to discharge between the convex portion of the surface of the electron emitting material layer 21 and the first grid 33 is also induced, and electrons are emitted. Since it causes radiation deterioration, there is a problem in reliability.
【００２０】この発明は、上記の課題を解決するために
なされたものであって、熱電子放射角度（エミッタン
ス）の向上および電子放射物質層を破壊する放電誘発の
低減をはかった電子管用陰極を提供することを目的とす
る。The present invention has been made to solve the above problems, and provides a cathode for an electron tube, which is intended to improve the thermionic emission angle (emittance) and reduce the discharge induction that destroys the electron emitting material layer. The purpose is to provide.
【００２１】[0021]
【課題を解決するための手段】上記の目的を達成するた
め、この発明による電子管用陰極は、ニッケルを主成分
とする陰極基体上に、バリウムを含むアルカリ土類金属
酸化物を主成分とする電子放射物質層を被着形成してな
る電子管用陰極において、とくに、上記の電子放射物質
層を、陰極基体に密着する側の下層と、この下層の上に
形成される上層との２層に分けて構成し、上層側の電子
放射物質の平均粒子径を下層側の電子放射物質の平均粒
子径よりも小さくして構成している。In order to achieve the above object, the cathode for an electron tube according to the present invention comprises a cathode substrate containing nickel as a main component and an alkaline earth metal oxide containing barium as a main component. In an electron tube cathode formed by depositing an electron-emitting substance layer, in particular, the above-mentioned electron-emitting substance layer is formed into two layers, a lower layer on the side close to the cathode substrate and an upper layer formed on this lower layer. Separately, the average particle diameter of the electron emitting material on the upper layer side is smaller than the average particle diameter of the electron emitting material on the lower layer side.
【００２２】また、望ましくは、上層側の電子放射物質
の平均粒子径を５μｍ以下、下層側の電子放射物質の平
均粒子径を５〜２０μｍとして構成したものである。Further, it is desirable that the electron emitting material on the upper layer side has an average particle diameter of 5 μm or less and the electron emitting material on the lower layer side has an average particle diameter of 5 to 20 μm.
【００２３】さらに、望ましくは、電子放射物質層の上
層側の厚さを、下層側の厚さの１／２以下として構成し
たものである。Further, it is desirable that the thickness of the electron emitting material layer on the upper layer side is set to 1/2 or less of the thickness on the lower layer side.
【００２４】[0024]
【作用】この発明によれば、電子放射物質層のうち、陰
極基体上に密着して形成してある下層側の電子放射物質
の平均粒子径に比べ、この下層の上に形成した上層側の
電子放射物質の平均粒子径を小さくしたことで、電子放
射物質層表面の平面度が改善され、表面の凹凸起伏の度
合が小さくなる。また、電子放射能力には影響を及ぼす
ことなく、放射電子の熱電子放射角度（エミッタンス）
を小さくできる。According to the present invention, in the electron-emitting substance layer, the average particle diameter of the electron-emitting substance on the lower layer side, which is formed in close contact with the cathode substrate, is smaller than that of the electron-emitting substance layer on the lower layer. By reducing the average particle diameter of the electron-emitting substance, the flatness of the surface of the electron-emitting substance layer is improved, and the degree of unevenness on the surface is reduced. In addition, thermionic emission angle (emittance) of the emitted electrons does not affect the electron emission ability.
Can be made smaller.
【００２５】また、電子放射物質層表面の平面度改善に
より、第１グリッド間との放電による電子放射物質層の
破壊の低減も可能となる。Further, by improving the flatness of the surface of the electron emitting material layer, it is possible to reduce the destruction of the electron emitting material layer due to the discharge between the first grids.
【００２６】[0026]
【実施例】以下、この発明の一実施例を図面により説明
する。図１は、この発明の一実施例による電子管用陰極
で用いる陰極構体の断面図である。同図において、２１
は三元系炭酸塩（Ｂａ／Ｓｒ／Ｃａ）ＣＯ3 からなる電
子放射物質層、２２は微量のＳｉ，Ｍｇ等の還元剤を含
んだ陰極基体、２３は陰極スリーブである。また、上記
電子放射物質層２１は、とくに、上記陰極基体２２に密
着して形成される第２層（下層ともいう）１２と、この
第１層１２の上に形成される第１層１１（上層ともい
う）との、２層に分けて構成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a cathode assembly used in an electron tube cathode according to an embodiment of the present invention. In the figure, 21
Is an electron emitting material layer made of ternary carbonate (Ba / Sr / Ca) CO 3 , 22 is a cathode substrate containing a small amount of a reducing agent such as Si or Mg, and 23 is a cathode sleeve. In addition, the electron emitting material layer 21 is, in particular, a second layer (also referred to as a lower layer) 12 formed in close contact with the cathode substrate 22 and a first layer 11 (formed on the first layer 12). (Also referred to as upper layer).
【００２７】ここで、上記第１層１１における電子放射
物質の平均粒径は、５μｍ以下（たとえば、３μｍ）
で、かつ３０μｍの層厚で形成し、第２層１２における
電子放射物質の平均粒径は、５〜２０μｍ（たとえば、
１０μｍ）で、かつ７０μｍの層厚で形成する。Here, the average particle diameter of the electron emitting material in the first layer 11 is 5 μm or less (for example, 3 μm).
And the average particle diameter of the electron emitting material in the second layer 12 is 5 to 20 μm (for example,
10 μm) and with a layer thickness of 70 μm.
【００２８】ここで、第１層１１における電子放射物質
の平均粒径を５μｍ以下とした理由は、５μｍ以上であ
ると、平面度の改善効果が少なくなるからである。Here, the reason why the average particle diameter of the electron emitting material in the first layer 11 is set to 5 μm or less is that if it is 5 μm or more, the flatness improving effect is reduced.
【００２９】また、第２層１２における電子放射物質の
平均粒径を５〜２０μｍとした理由は、５μｍ以下もし
くは２０μｍ以上であると、電子放射物質層として、最
も効果的な多孔質化をはかりにくいからである。The reason why the average particle diameter of the electron emitting material in the second layer 12 is set to 5 to 20 μm is 5 μm or less or 20 μm or more so that the electron emitting material layer is most effectively made porous. Because it is difficult.
【００３０】なお、この実施例では、スプレー等の噴霧
手段によって電子放射物質を陰極基体２２上に被着形成
させたが、電着法等の他の被着形成方法であってもよ
い。In this embodiment, the electron emitting substance is deposited and formed on the cathode substrate 22 by a spraying means such as a spray, but another deposition method such as an electrodeposition method may be used.
【００３１】この実施例によって製作した陰極構体２を
電子銃３内に組み込み、この電子銃３を受像管に装着さ
せた場合、従来の電子放射物質層２１の全層にわたって
平均粒径１０μｍの均一な多孔質構造となっている場合
の陰極構体２２に比べ、熱電子放射角度（エミッタン
ス）は２０％程度小さくなり、蛍光体の発光面積も１５
％程度小さくなった。さらに、電子放射物質層２１の第
１グリッド３３間との放電による電子放射物質層２１の
損傷頻度も３０％程度低減し、信頼性の点でも向上し
た。When the cathode assembly 2 manufactured according to this embodiment is incorporated in the electron gun 3 and the electron gun 3 is mounted on the picture tube, the average particle diameter of 10 μm is uniform over all layers of the conventional electron emitting material layer 21. Compared with the cathode structure 22 having a porous structure, the thermionic emission angle (emittance) is about 20% smaller, and the light emitting area of the phosphor is 15%.
It became smaller by about%. Further, the frequency of damage to the electron emitting material layer 21 due to the discharge between the electron emitting material layer 21 and the first grid 33 was reduced by about 30%, and the reliability was also improved.
【００３２】[0032]
【発明の効果】以上のように、この発明によれば、陰極
からの熱電子放射角度（エミッタンス）の向上および電
子放射物質層と第１グリッドとの放電頻度の低減をはか
ることができ、信頼性の高い電子管用陰極を得ることが
できるという効果がある。As described above, according to the present invention, it is possible to improve the thermionic emission angle (emittance) from the cathode and reduce the discharge frequency between the electron emitting material layer and the first grid. There is an effect that it is possible to obtain a cathode for an electron tube having high property.
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明の実施例による電子管用陰極で用いる
陰極構体の断面図である。FIG. 1 is a cross-sectional view of a cathode assembly used in an electron tube cathode according to an embodiment of the present invention.
【図２】従来の陰極構体を模式的に示す拡大断面図であ
る。FIG. 2 is an enlarged sectional view schematically showing a conventional cathode assembly.
【図３】従来の受像管に用いられる電子銃を模式的に示
す図である。FIG. 3 is a diagram schematically showing an electron gun used in a conventional picture tube.
【符号の説明】 １１ 電子放射物質の第１層 １２ 電子放射物質の第２層 ２１ 電子放射物質層 ２２ 陰極基体 ２３ 陰極スリーブ ２ 陰極構体[Description of Reference Signs] 11 first layer of electron emitting material 12 second layer of electron emitting material 21 electron emitting material layer 22 cathode substrate 23 cathode sleeve 2 cathode assembly
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成３年１１月２７日[Submission date] November 27, 1991
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１３[Correction target item name] 0013
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１３】ＢａＯ＋Ｍｇ→Ｂａ＋ＭｇＯ …（II）４ ＢａＯ＋Ｓｉ→２Ｂａ＋Ｂａ2 ＳｉＯ4 …（ＩＩＩ
）BaO + Mg → Ba + MgO (II) 4 BaO + Si → 2Ba + Ba 2 SiO 4 (III)
)
Claims (3)
バリウムを含むアルカリ土類金属酸化物を主成分とする
電子放射物質層を被着形成してなる電子管用陰極におい
て、上記電子放射物質層を陰極基体に密着する側の下層
と、この下層の上に形成される上層とに分けて構成し、
上層側の電子放射物質の平均粒子径を下層側の電子放射
物質の平均粒子径よりも小さくしたことを特徴とする電
子管用陰極。1. A cathode substrate containing nickel as a main component,
In an electron tube cathode formed by depositing an electron emissive material layer containing an alkaline earth metal oxide containing barium as a main component, a lower layer on the side where the electron emissive material layer adheres to a cathode substrate, and an upper layer of this lower layer. It is configured separately from the upper layer formed on
A cathode for an electron tube, wherein the average particle diameter of the electron emitting material on the upper layer side is smaller than the average particle diameter of the electron emitting material on the lower layer side.
μｍ以下、下層側の電子放射物質の平均粒子径を５〜２
０μｍとした請求項１記載の電子管用陰極。2. The average particle diameter of the electron-emitting material on the upper layer side is 5
The average particle size of the electron-emitting material on the lower layer side is 5 to 2 μm or less
The cathode for an electron tube according to claim 1, which has a thickness of 0 μm.
の厚さの１／２以下とした請求項１記載の電子管用陰
極。3. The cathode for an electron tube according to claim 1, wherein the thickness of the electron emitting material layer on the upper layer side is 1/2 or less of the thickness on the lower layer side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23180791A JPH0574324A (en) | 1991-09-11 | 1991-09-11 | Electron tube cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23180791A JPH0574324A (en) | 1991-09-11 | 1991-09-11 | Electron tube cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0574324A true JPH0574324A (en) | 1993-03-26 |
Family
ID=16929327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23180791A Pending JPH0574324A (en) | 1991-09-11 | 1991-09-11 | Electron tube cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0574324A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306003B1 (en) | 1997-07-09 | 2001-10-23 | Matsushita Electric Industrial Co., Ltd. | Impregnated cathode and method for manufacturing the same |
| US6351061B1 (en) | 1997-09-26 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Cathode, method for manufacturing the cathode, and picture tube |
| US6565916B2 (en) | 2000-02-21 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method for producing oxide cathode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603831A (en) * | 1983-06-21 | 1985-01-10 | Matsushita Electronics Corp | Oxide coated cathode for cathode-ray tube |
-
1991
- 1991-09-11 JP JP23180791A patent/JPH0574324A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603831A (en) * | 1983-06-21 | 1985-01-10 | Matsushita Electronics Corp | Oxide coated cathode for cathode-ray tube |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306003B1 (en) | 1997-07-09 | 2001-10-23 | Matsushita Electric Industrial Co., Ltd. | Impregnated cathode and method for manufacturing the same |
| US6376975B1 (en) | 1997-07-09 | 2002-04-23 | Matsushita Electric Industrial Co., Ltd. | Impregnated cathode and method for manufacturing the same |
| US6705913B2 (en) | 1997-07-09 | 2004-03-16 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing impregnated cathode having a cathode pellet |
| US6351061B1 (en) | 1997-09-26 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Cathode, method for manufacturing the cathode, and picture tube |
| US6565402B2 (en) | 1997-09-26 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Cathode, method for manufacturing the cathode, and picture tube |
| US6565916B2 (en) | 2000-02-21 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method for producing oxide cathode |
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