JPH0574655A - Variable capacity capacitor - Google Patents
Variable capacity capacitorInfo
- Publication number
- JPH0574655A JPH0574655A JP3236180A JP23618091A JPH0574655A JP H0574655 A JPH0574655 A JP H0574655A JP 3236180 A JP3236180 A JP 3236180A JP 23618091 A JP23618091 A JP 23618091A JP H0574655 A JPH0574655 A JP H0574655A
- Authority
- JP
- Japan
- Prior art keywords
- movable electrode
- fixed electrode
- electrode
- variable capacity
- capacity capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 abstract 1
- 230000008859 change Effects 0.000 description 5
- 239000011800 void material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Micromachines (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電圧容量変化素子の一
種である可変容量コンデンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a variable capacitance capacitor which is a kind of voltage capacitance change element.
【０００２】[0002]
【従来の技術】従来から、一般的な電圧容量変化素子と
しては、固定電極板と対向する可動電極板を軸に取り付
けておき、軸の機械的な回転によって両電極板の対向面
積を増減させて静電容量を変化させる可変空気コンデン
サ、いわゆるバリコンや、外部バイアス電圧を制御する
ことによって電圧容量を変化させるバラクタダイオード
（可変容量ダイオード）などが知られている。2. Description of the Related Art Conventionally, as a general voltage capacity changing element, a movable electrode plate facing a fixed electrode plate is attached to a shaft, and the facing area of both electrode plates is increased or decreased by mechanical rotation of the shaft. There are known variable air capacitors that change the electrostatic capacitance, so-called variable capacitors, and varactor diodes (variable capacitance diodes) that change the voltage capacitance by controlling an external bias voltage.
【０００３】[0003]
【発明が解決しようとする課題】ところで、前記バリコ
ンにおいては、対向面積を増減するための回転機構を欠
くことができず、その全体形状を一定の限度以下にまで
小型化するのが大変に難しいという不都合がある。ま
た、バラクタダイオードには単一素子によって容量変化
を行いうるという利点がある一方で耐圧が低いという欠
点があり、耐圧の向上を図るために内部抵抗を大きくし
た場合には、Ｑ値の低下が生じるという不都合がある。By the way, in the variable capacitor, a rotating mechanism for increasing or decreasing the facing area is indispensable, and it is very difficult to downsize the entire shape to a certain limit or less. There is an inconvenience. Further, the varactor diode has an advantage that the capacitance can be changed by a single element, but has a drawback that the withstand voltage is low. Therefore, when the internal resistance is increased in order to improve the withstand voltage, the Q value is lowered. There is an inconvenience that it will occur.
【０００４】本発明は、このような不都合に鑑みて創案
されたものであって、単一素子でありながらも耐圧及び
Ｑ値の高い可変容量コンデンサを提供することを目的と
している。The present invention was devised in view of such inconveniences, and an object thereof is to provide a variable capacitor having a high withstand voltage and a high Q value even though it is a single element.
【０００５】[0005]
【課題を解決するための手段】本発明にかかる可変容量
コンデンサは、このような目的を達成するために、共に
薄膜体として形成された固定電極と可動電極とを備えて
おり、これらが絶縁支持台に設けられた空隙部を介して
対向支持されていることを特徴とするものである。In order to achieve such an object, a variable capacitor according to the present invention has a fixed electrode and a movable electrode both formed as a thin film body, and these are insulated and supported. It is characterized in that they are opposed to each other through a gap provided in the table.
【０００６】[0006]
【作用】上記構成によれば、固定電極と可動電極との間
に外部バイアス電圧を印加すると、固定電極と対向して
支持された可動電極がクーロン力の作用によって揺れ動
くことになり、これら両者間の間隔が増減変化すること
になる。According to the above structure, when an external bias voltage is applied between the fixed electrode and the movable electrode, the movable electrode supported so as to face the fixed electrode sways due to the action of the Coulomb force. The interval of will increase or decrease.
【０００７】[0007]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【０００８】図１は本実施例にかかる可変容量コンデン
サの概略構造を示す断面図であり、この図における符号
１は可変容量コンデンサである。この可変容量コンデン
サ１は、共に薄膜体として形成された固定電極２と可動
電極３とを備えており、これらが絶縁支持台４に設けら
れた空隙部５を介して対向支持された構造となってい
る。すなわち、例えば、この絶縁支持台４は半導体素子
形成用のシリコン基板であり、その一面側に彫り込み形
成された凹部である空隙部５の底面にはアルミニウムの
蒸着などによって形成された固定電極２が設けられてい
る。また、この凹部の開口縁部には同様にして形成され
た可動電極３が空隙部５を介して浮いた状態で設けられ
ており、固定電極２及び可動電極３それぞれの一端から
引き出し形成された端子部（図示していない）間にはバ
イアス電圧が印加されるようになっている。なお、固定
電極２や可動電極３などの平面視形状は角形や円形など
自由に選択されるものであり、これらの支持方法につい
ても自由である。FIG. 1 is a sectional view showing a schematic structure of a variable capacitance capacitor according to the present embodiment. Reference numeral 1 in this figure is a variable capacitance capacitor. The variable capacitor 1 includes a fixed electrode 2 and a movable electrode 3, both of which are formed as a thin film body, and has a structure in which they are supported opposite to each other via a gap 5 provided in an insulating support 4. ing. That is, for example, the insulating support base 4 is a silicon substrate for semiconductor element formation, and the fixed electrode 2 formed by vapor deposition of aluminum or the like is formed on the bottom surface of the void portion 5 which is a concave portion formed on one surface side thereof. It is provided. In addition, a movable electrode 3 formed in the same manner is provided at the opening edge of this recess in a state of floating via a gap 5, and is formed by being drawn from one end of each of the fixed electrode 2 and the movable electrode 3. A bias voltage is applied between the terminals (not shown). It should be noted that the planar view shape of the fixed electrode 2, the movable electrode 3 and the like can be freely selected such as a square shape or a circular shape, and a method of supporting these is also free.
【０００９】そこで、これらの固定電極２及び可動電極
３間に外部バイアス電圧を印加すると、固定電極２と空
隙部５を介して対向し、かつ、浮いた状態で支持された
可動電極３がクーロン力の作用によって揺れ動くことに
なり、両者間の間隔が増減変化することになる。そし
て、このことにより、固定電極２及び可動電極３におけ
る静電容量が変化することになり、印加した外部バイア
ス電圧に見合った電圧容量が得られることになる。な
お、揺れ動いた可動電極３が固定電極２に接触して短絡
しないよう、予め固定電極２及び可動電極３のうちの少
なくとも一方の表面上に絶縁物層（図示していない）を
形成しておくことが好ましい。また、ここで、空隙部５
内は空気によって満たされているのが普通であるから、
可変容量コンデンサ１の耐圧及びＱ値が非常に高いもの
となるのは勿論である。Therefore, when an external bias voltage is applied between the fixed electrode 2 and the movable electrode 3, the movable electrode 3, which is opposed to the fixed electrode 2 through the gap 5 and is supported in a floating state, is Coulomb. It will be shaken by the action of force, and the interval between the two will increase or decrease. Then, as a result, the electrostatic capacitances of the fixed electrode 2 and the movable electrode 3 change, and the voltage capacitance corresponding to the applied external bias voltage is obtained. An insulating layer (not shown) is previously formed on the surface of at least one of the fixed electrode 2 and the movable electrode 3 so that the oscillating movable electrode 3 does not come into contact with the fixed electrode 2 to cause a short circuit. Preferably. In addition, here, the void 5
Since the inside is usually filled with air,
Of course, the withstand voltage and the Q value of the variable capacitor 1 are very high.
【００１０】ところで、本発明の実現構造が図１で示す
ものに限定されないことはいうまでもない。すなわち、
図２で示すように、絶縁支持台４の空隙部５となる凹部
が形成された面とは逆の対向面上に固定電極２を形成し
てもよく、また、図３及び図４でそれぞれ示すように、
互いに対面配置された絶縁支持台４内の空隙部５同士間
に可動電極３を架けわたすようにしてもよい。そして、
可変容量コンデンサ１を図３及び図４で示すように構成
した場合には、これらを積み重ねて一体化することによ
り、容量値の大きなものを構成することが可能となる。Needless to say, the realization structure of the present invention is not limited to that shown in FIG. That is,
As shown in FIG. 2, the fixed electrode 2 may be formed on the opposite surface of the insulating support base 4 opposite to the surface on which the concave portion serving as the void 5 is formed, and in FIGS. 3 and 4, respectively. As shown
The movable electrode 3 may be spanned between the voids 5 in the insulating support bases 4 arranged to face each other. And
When the variable capacitor 1 is configured as shown in FIG. 3 and FIG. 4, it is possible to construct a capacitor having a large capacitance value by stacking and integrating these.
【００１１】[0011]
【発明の効果】以上説明したように、本発明にかかる可
変容量コンデンサにおいては、共に薄膜体として形成さ
れた固定電極と可動電極とが絶縁支持台に設けられた空
隙部を介して対向支持された構造を採用しているので、
固定電極と可動電極との間に外部バイアス電圧を印加し
てやると、クーロン力の作用によって両者間の間隔が増
減変化して電圧容量が変化することになる。したがっ
て、本発明によれば、単一素子でありながらも耐圧及び
Ｑ値の高い可変容量コンデンサが得られることになる。As described above, in the variable capacitor according to the present invention, the fixed electrode and the movable electrode, both of which are formed as a thin film body, are supported opposite to each other through the space provided in the insulating support. Since it adopts a different structure,
When an external bias voltage is applied between the fixed electrode and the movable electrode, the Coulomb force acts to increase or decrease the gap between the two and change the voltage capacity. Therefore, according to the present invention, it is possible to obtain a variable capacitor having a high breakdown voltage and a high Q value even though it is a single element.
【図１】本実施例にかかる可変容量コンデンサの概略構
造を示す断面図である。FIG. 1 is a cross-sectional view showing a schematic structure of a variable capacitor according to an embodiment.
【図２】その変形例を示す断面図である。FIG. 2 is a sectional view showing a modification thereof.
【図３】その変形例を示す断面図である。FIG. 3 is a sectional view showing a modification thereof.
【図４】その変形例を示す断面図である。FIG. 4 is a sectional view showing a modification thereof.
【符号の説明】 １ 可変容量コンデンサ ２ 固定電極 ３ 可動電極 ４ 絶縁支持台 ５ 空隙部[Explanation of symbols] 1 variable capacitor 2 fixed electrode 3 movable electrode 4 insulating support 5 void
Claims (1)
（２）と可動電極（３）とを備えており、これらが絶縁
支持台（４）に設けられた空隙部（５）を介して対向支
持されていることを特徴とする可変容量コンデンサ。1. A fixed electrode (2) and a movable electrode (3) both of which are formed as a thin film body, and these are opposed to each other through a gap (5) provided in an insulating support (4). A variable capacitor that is supported.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23618091A JP3389607B2 (en) | 1991-09-17 | 1991-09-17 | How to change the capacitance of a variable capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23618091A JP3389607B2 (en) | 1991-09-17 | 1991-09-17 | How to change the capacitance of a variable capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0574655A true JPH0574655A (en) | 1993-03-26 |
| JP3389607B2 JP3389607B2 (en) | 2003-03-24 |
Family
ID=16996959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23618091A Expired - Lifetime JP3389607B2 (en) | 1991-09-17 | 1991-09-17 | How to change the capacitance of a variable capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3389607B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0759628A1 (en) * | 1995-08-18 | 1997-02-26 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| EP0725408A3 (en) * | 1995-02-01 | 1998-07-08 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| KR100446735B1 (en) * | 2002-04-23 | 2004-09-07 | 엘지전자 주식회사 | Micro tunable capacitor and manufacturing method thereof |
| US8749445B2 (en) | 2010-10-15 | 2014-06-10 | Sony Corporation | Variable capacitance device, antenna module, and communication apparatus |
-
1991
- 1991-09-17 JP JP23618091A patent/JP3389607B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0725408A3 (en) * | 1995-02-01 | 1998-07-08 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| US5901031A (en) * | 1995-02-01 | 1999-05-04 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| EP0759628A1 (en) * | 1995-08-18 | 1997-02-26 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| US5818683A (en) * | 1995-08-18 | 1998-10-06 | Murata Manufacturing Co., Ltd. | Variable capacitor |
| KR100446735B1 (en) * | 2002-04-23 | 2004-09-07 | 엘지전자 주식회사 | Micro tunable capacitor and manufacturing method thereof |
| US8749445B2 (en) | 2010-10-15 | 2014-06-10 | Sony Corporation | Variable capacitance device, antenna module, and communication apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3389607B2 (en) | 2003-03-24 |
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