JPH0574680A - Projection exposing method - Google Patents
Projection exposing methodInfo
- Publication number
- JPH0574680A JPH0574680A JP4054756A JP5475692A JPH0574680A JP H0574680 A JPH0574680 A JP H0574680A JP 4054756 A JP4054756 A JP 4054756A JP 5475692 A JP5475692 A JP 5475692A JP H0574680 A JPH0574680 A JP H0574680A
- Authority
- JP
- Japan
- Prior art keywords
- reduction
- substrate
- lens
- reticle
- projection exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
(57)【要約】
【目的】 縮小投影光学系内の媒体物の屈折率等の変化
により縮小倍率が変化して、パターンの寸法精度が劣化
することを防ぎ、自動的に縮小倍率誤差を補正すること
の可能な縮小投影露光装置を提供する。
【構成】 縮小レンズ（２３）と基板（２４）上のパタ
ーン（２９）の位置とレティクル（２２）上のマークと
を検出するパターン検出器（２５）と、その検出値から
縮小倍率誤差を演算する演算回路（３６）と焦点位置補
正用のＺ移動台（３０）、縮小投影露光光学系の距離を
変える縮小レンズの駆動モータ（３３）とから主に構成
される。
【効果】 縮小レンズ（２３）を介して、基板（２４）
上のパターン（２９）を、レティクル（２２）上のマー
クに対する相対的な位置をパターン検出器（２５）で検
出し、その検出値から演算回路（３６）で縮小倍率誤差
を求め、Ｚ移動台（３０）を制御して焦点位置を合焦位
置に補正し、駆動モータ（３３）で縮小レンズ（２３）
を制御して縮小投影露光光学系の距離を変えることによ
り、縮小倍率誤差を補正できる。
(57) [Abstract] [Purpose] It is possible to prevent the reduction dimensional accuracy from deteriorating due to changes in the reduction ratio due to changes in the refractive index of the medium in the reduction projection optical system, and to automatically correct the reduction ratio error. Provided is a reduction projection exposure apparatus capable of performing. A pattern detector (25) for detecting the position of a reduction lens (23), a pattern (29) on a substrate (24) and a mark on a reticle (22), and a reduction magnification error calculated from the detected values. It is mainly composed of a calculation circuit (36), a Z moving table (30) for focus position correction, and a reduction lens drive motor (33) for changing the distance of the reduction projection exposure optical system. [Effect] Through the reduction lens (23), the substrate (24)
The relative position of the upper pattern (29) with respect to the mark on the reticle (22) is detected by the pattern detector (25), and the reduction ratio error is calculated from the detected value by the arithmetic circuit (36). (30) is controlled to correct the focus position to the in-focus position, and the reduction lens (23) is driven by the drive motor (33).
The reduction magnification error can be corrected by changing the distance of the reduction projection exposure optical system by controlling.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子の製造工程
で使用される縮小投影露光方法の改良に係り、特に、こ
の種の装置において寸法精度が厳しく要求される高精度
な半導体素子作成時に生じる縮小倍率誤差を自動的に補
正して縮小露光する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a reduction projection exposure method used in a semiconductor device manufacturing process, and particularly in the production of a highly accurate semiconductor device which requires strict dimensional accuracy in an apparatus of this type. The present invention relates to a method of automatically correcting a reduction magnification error that occurs and performing reduction exposure.
【０００２】[0002]
【従来の技術】従来の縮小投影露光装置は、図３に原理
構成を示したような光学系を基本として、原画４２のパ
ターンを縮小レンズ４３を用いて、基板４４の上に投影
している。縮小レンズ４３と基板４４との距離をａ、縮
小レンズ４３と原画４２との距離をｂとすると光学系内
の屈折率分布が一定である限り縮小倍率ｍはｍ＝ａ／
ｂ、焦点距離ｆは１／ｆ＝１／ａ＋１／ｂで表わされ
る。2. Description of the Related Art In a conventional reduction projection exposure apparatus, a pattern of an original image 42 is projected onto a substrate 44 by using a reduction lens 43, based on an optical system whose principle configuration is shown in FIG. .. Assuming that the distance between the reduction lens 43 and the substrate 44 is a and the distance between the reduction lens 43 and the original image 42 is b, the reduction ratio m is m = a / as long as the refractive index distribution in the optical system is constant.
b and the focal length f are represented by 1 / f = 1 / a + 1 / b.
【０００３】[0003]
【発明が解決しようとする課題】従来の縮小投影露光装
置においては上述距離ａとｂとが固定されているため、
原画４２から基板４４に至るまでの光学系の光路内の媒
体物の条件が変わったりなどして屈折率の分布が変化す
ると、光学系上の上述距離ａ，ｂが屈折率の関数とな
り、変化して縮小倍率ｍが変わってしまい、基板４４上
に投影されるパターンの寸法精度が劣化する欠点があっ
た。In the conventional reduction projection exposure apparatus, since the distances a and b are fixed,
When the distribution of the refractive index changes due to a change in the condition of the medium in the optical path of the optical system from the original image 42 to the substrate 44, the above distances a and b on the optical system become a function of the refractive index and change. As a result, the reduction ratio m changes, and the dimensional accuracy of the pattern projected on the substrate 44 deteriorates.
【０００４】[0004]
【課題を解決するための手段】したがって、本発明の目
的は、縮小投影光学系内の媒体物の屈折率分布等の変化
により縮小倍率誤差を生じて原画から基板上に縮小投影
されるパターンの絶対寸法精度が劣化することを防ぎ、
常に、高精度な絶対寸法の半導体素子を自動的に作るこ
とを可能ならしめる縮小投影露光方法を提供することに
ある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a pattern which is reduced and projected from an original image onto a substrate by causing a reduction magnification error due to a change in the refractive index distribution of a medium in the reduction projection optical system. Prevents deterioration of absolute dimensional accuracy,
It is always an object of the present invention to provide a reduction projection exposure method which makes it possible to automatically manufacture highly accurate absolute size semiconductor devices.
【０００５】[0005]
【作用】上記目的を達成するために本発明では、基板上
のマークを縮小投影レンズとレティクルとを通して計測
し、縮小倍率誤差を演算して、縮小投影レンズを光軸方
向に微動させることによって自動的に縮小倍率誤差を補
正するように縮小投影露光方法を用いたことを特徴とし
ている。In order to achieve the above object, the present invention automatically measures the mark on the substrate through the reduction projection lens and the reticle, calculates the reduction magnification error, and finely moves the reduction projection lens in the optical axis direction. It is characterized in that a reduction projection exposure method is used to correct a reduction magnification error.
【０００６】[0006]
【実施例】以下、本発明の一実施例を図２により説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
【０００７】原画であるレティクル２２上のパターンを
光源（図示していない）からの照明光をコンデンサレン
ズ２１で集光して照明し、縮小レンズ２３を通して基板
２４上に縮小投影させる。図２内で斜線を付した部分
は、固定されて不動状態の基準部材である。The pattern on the reticle 22, which is an original image, is condensed and illuminated with illumination light from a light source (not shown) by the condenser lens 21, and is projected on the substrate 24 through the reduction lens 23 in a reduced scale. The shaded portion in FIG. 2 is a reference member that is fixed and immovable.
【０００８】基板２４は光軸方向に可動なＺ移動台３０
と光軸と直角な平面内で可動なＸＹ移動台３１とで構成
される移動台上に設置され、縮小レンズ２３により結像
される焦点位置に基板２４面が常に保持されるように、
特公昭５５−１８０４３号で示したような、自動焦点機
構が具備されている。基板２４の相対位置は、移動台の
位置をレーザ測長計３９で測長し、演算回路３５で求め
ることができる。The substrate 24 is a Z moving table 30 which is movable in the optical axis direction.
And an XY moving table 31 that is movable in a plane perpendicular to the optical axis, and is installed on a moving table so that the surface of the substrate 24 is always held at the focal position where an image is formed by the reduction lens 23.
An automatic focusing mechanism is provided as shown in Japanese Examined Patent Publication No. 55-18043. The relative position of the substrate 24 can be obtained by the arithmetic circuit 35 by measuring the position of the movable table with the laser length meter 39.
【０００９】縮小レンズ２３は、光軸方向のみに可動な
ように基準部材に対して案内部材３２で支持され、駆動
モータ３３によって光軸方向に微動でき、その微動量
は、例えば、差動コイル３４によって測長され、レンズ
上下制御回路３８に帰還される。The reduction lens 23 is supported by a guide member 32 with respect to a reference member so as to be movable only in the optical axis direction, and can be finely moved in the optical axis direction by a drive motor 33. The fine movement amount is, for example, a differential coil. The length is measured by 34 and is fed back to the lens up / down control circuit 38.
【００１０】ここで、縮小倍率の測定方法について、図
１（ａ），（ｂ），（ｃ）を用いて述べる。A method of measuring the reduction ratio will be described with reference to FIGS. 1 (a), 1 (b) and 1 (c).
【００１１】この縮小投影露光装置はコンデンサレンズ
１、レティクル２、縮小投影レンズ３、基板４、および
第１のパターン検出器５、第２のパターン検出器６から
構成されている。原画であるレティクル２上には所定の
間隔Ｌ（図１（ｂ）参照）を隔てた位置に正方形の光透
過性の窓７，８が設けられている。図１（ｂ）は上述の
窓７，８の拡大図を示したものである。基板４上のマー
ク９を縮小レンズ３およびレティクル２の窓７を通して
見るとマーク９′のようになり、また、基板４を所定距
離ｌだけ移動して窓８から見るとマーク９″のようにな
る（図１（ｂ）参照）。This reduction projection exposure apparatus comprises a condenser lens 1, a reticle 2, a reduction projection lens 3, a substrate 4, a first pattern detector 5 and a second pattern detector 6. Square light-transmissive windows 7 and 8 are provided on the reticle 2, which is an original image, at positions separated by a predetermined distance L (see FIG. 1B). FIG. 1B shows an enlarged view of the windows 7 and 8 described above. When the mark 9 on the substrate 4 is seen through the reduction lens 3 and the window 7 of the reticle 2, it becomes like a mark 9 ', and when the substrate 4 is moved by a predetermined distance l and seen from the window 8, it becomes like a mark 9 ". (See FIG. 1B).
【００１２】パターン検出器５はレティクル２の窓７内
におけるマーク９′の位置を、またパターン検出器６は
レティクル２の窓８内におけるマーク９″の位置を各々
測長することができ、２つのマーク９′と９″との相対
距離がレティクル２の窓７と８との間隔Ｌに比べてずれ
ている量ΔＬを演算することができる。The pattern detector 5 can measure the position of the mark 9'in the window 7 of the reticle 2, and the pattern detector 6 can measure the position of the mark 9 "in the window 8 of the reticle 2, respectively. It is possible to calculate the amount ΔL in which the relative distance between the two marks 9 ′ and 9 ″ is deviated from the distance L between the windows 7 and 8 of the reticle 2.
【００１３】今、縮小投影光学系の縮小倍率をｍ（ｍ＜
１）とすると、ｌ＝ｍＬとなるように、基板４のマーク
９を移動したにもかかわらずΔＬだけ大きくずれたとす
ると、ｌ＝（ｍ＋Δｍ）（Ｌ＋ΔＬ）なる関係を満す。
Δｍだけ縮小倍率誤差となり、光学系によって縮小しす
ぎていることになる。Now, the reduction magnification of the reduction projection optical system is m (m <
In the case of 1), if the mark 9 on the substrate 4 is moved so as to be 1 = mL and the mark 9 is largely displaced by ΔL, the relationship of 1 = (m + Δm) (L + ΔL) is satisfied.
There is a reduction magnification error of Δm, which means that the optical system has reduced too much.
【００１４】一方、図１（ｃ）に示したように、縮小投
影光学系において、レティクル２と縮小レンズ３との間
隔ｂがΔｂだけ大きくなっている時には、上述のように
マーク９をｌだけ移動させた時に、ΔＬ／Δｂ＝Ｌ／ｂ
なる関係を満すΔＬだけ、マーク９′と９″とがずれる
ことになる。On the other hand, as shown in FIG. 1C, in the reduction projection optical system, when the distance b between the reticle 2 and the reduction lens 3 is increased by Δb, the mark 9 is increased by 1 as described above. When moved, ΔL / Δb = L / b
The marks 9 ′ and 9 ″ are displaced by ΔL that satisfies the relationship.
【００１５】従って、第１，第２のパターン検出器５，
６で検出されたマーク９の位置ずれ量ΔＬからΔｂ＝Δ
Ｌ・ｂ／Ｌなる関係を満す量だけ縮小レンズ３とレティ
クル２との相対距離を狭くすれば縮小倍率誤差Δｍが零
になる。ΔＬが負の値の時はΔｂだけ縮小レンズ３とレ
ティクル２との間隔を大きくすれば良い。Therefore, the first and second pattern detectors 5,
From the positional deviation amount ΔL of the mark 9 detected in 6, Δb = Δ
If the relative distance between the reduction lens 3 and the reticle 2 is reduced by an amount that satisfies the relationship of L · b / L, the reduction magnification error Δm becomes zero. When ΔL is a negative value, the distance between the reduction lens 3 and the reticle 2 may be increased by Δb.
【００１６】実施例としては、１／１０縮小投影露光装
置の場合として、ｍ＝０.１，ｆ＝４９．２mm，ａ＝５
４.１２７mm，ｂ＝５４１.２７mm，ｌ＝１０mmなる値と
なる。この時，Δｍ＝０.０００００１（１０~4％）だ
け大きい縮小倍率誤差があると、Ｌ0＝１００mmのパタ
ーンは、Ｌ0（ｍ＋Δｍ）から（１０mm−０.１μｍ）の
寸法となり０.１μｍだけ小さな寸法誤差を生じてしま
う。このような状態を第１，第２のパターン検出器５，
６で測定すると、長さｌ＝１０mmはＬ＋ΔＬ＝ｌ／（ｍ
＋Δｍ），Ｌ＝１００mmに対してΔＬ＝１μｍ大きく検
出される。As an example, in the case of a 1/10 reduction projection exposure apparatus, m = 0.1, f = 49.2 mm, a = 5
The values are 4.127 mm, b = 541.27 mm, and l = 10 mm. At this time, if there is a large reduction magnification error by Δm = 0.000001 (10 to 4 %), the pattern of L 0 = 100 mm has a size of L 0 (m + Δm) to (10 mm-0.1 μm) of 0.1 μm. Only a small dimensional error will occur. In such a state, the first and second pattern detectors 5,
When measured with 6, the length l = 10 mm is L + ΔL = 1 / (m
+ Δm), L = 100 mm, ΔL = 1 μm is detected larger.
【００１７】この際、Δｂ＝５.４μｍだけ縮小レンズ
３とレティクル２との間隔を狭くすれば、縮小倍率誤差
は消えることになる。At this time, if the distance between the reduction lens 3 and the reticle 2 is reduced by Δb = 5.4 μm, the reduction magnification error disappears.
【００１８】以上述べたことから判るように、所定間隔
Ｌ離れたレティクル２上から縮小レンズ３を通して所定
量ｌだけ移動した基板４上のマーク９の位置ずれ量ΔＬ
を測定するだけで、縮小倍率誤差が求まり、Δｂ＝ΔＬ
・ｂ／Ｌなる関係を満すように縮小レンズ３とレティク
ル２との間隔を微調することにより、縮小倍率誤差が補
正できる。As can be seen from the above description, the positional deviation amount ΔL of the mark 9 on the substrate 4 moved by the predetermined amount 1 from the reticle 2 separated by the predetermined distance L through the reduction lens 3.
The error of reduction ratio can be calculated by simply measuring
The reduction magnification error can be corrected by finely adjusting the distance between the reduction lens 3 and the reticle 2 so as to satisfy the relationship of b / L.
【００１９】ところで、従来の縮小投影露光装置では、
一度正確にレティクル２と縮小レンズ３との距離ｂを固
定すれば、縮小倍率は変化することはなかった。By the way, in the conventional reduction projection exposure apparatus,
Once the distance b between the reticle 2 and the reduction lens 3 was accurately fixed, the reduction magnification did not change.
【００２０】しかし、近年、半導体素子の高精度化に伴
って原画、つまりレティクル２面に塵埃が付着すること
を防ぐため、レティクル２をカバーガラスでおおった
り、縮小レンズ３と基板４との間に空気以外の媒体物を
介在させて作動させる縮小投影露光装置が開発されてい
る。このように、縮小投影光学系に空気以外の媒体物を
介在させる場合、その媒体物の屈折率やその媒体物の厚
さが一定値を保つ限りにおいては、一度、屈折率の異な
ることによって生じる縮小倍率誤差を修正すれば良いの
であるが、通常は、媒体物の屈折率や厚さを一定に保持
することは極めて困難であり、そのために縮小倍率誤差
を生じてしまうことになる。However, in recent years, in order to prevent dust from adhering to the original image, that is, the surface of the reticle 2 due to the higher precision of semiconductor elements, the reticle 2 is covered with a cover glass, or between the reduction lens 3 and the substrate 4. There has been developed a reduction projection exposure apparatus which operates by interposing a medium other than air in it. Thus, when a medium other than air is interposed in the reduction projection optical system, as long as the refractive index of the medium or the thickness of the medium maintains a constant value, it is caused by a difference in the refractive index once. It suffices to correct the reduction magnification error, but it is usually extremely difficult to keep the refractive index and the thickness of the medium constant, which causes a reduction magnification error.
【００２１】そこで、本発明では、上述したような、縮
小露光光学系の間に任意の屈折率や厚さの媒体物が存在
しても、常に上述したようなパターン検出器５，６を用
いて縮小倍率誤差を検出し、補正することを可能とする
点に特徴がある。Therefore, in the present invention, the pattern detectors 5 and 6 as described above are always used even if there is a medium having an arbitrary refractive index and thickness between the reduction exposure optical systems as described above. The feature is that it is possible to detect and correct the reduction magnification error.
【００２２】ここで、図２の実施例にもどって本発明を
さらに詳細に説明する。パターン検出器２５はレティク
ル２２、縮小レンズ２３を通して、基板２４上のマーク
２９の位置を検出し、検出信号は検出回路３７、演算回
路３６に送られ、レンズ上下制御回路３８によって、モ
ータ３３等の駆動系により、縮小レンズ２３が光軸方向
に微動されることになる。The present invention will now be described in more detail by returning to the embodiment shown in FIG. The pattern detector 25 detects the position of the mark 29 on the substrate 24 through the reticle 22 and the reduction lens 23, and the detection signal is sent to the detection circuit 37 and the arithmetic circuit 36, and the lens up / down control circuit 38 causes the motor 33, etc. The reduction lens 23 is finely moved in the optical axis direction by the drive system.
【００２３】任意の屈折率や厚さの媒体物は、図示して
いないが、レティクル２２と縮小レンズ２３および基板
２４との間のどこに存在していても、本発明の機能が生
かされる。Although not shown in the figure, a medium having an arbitrary refractive index and thickness can be used wherever it exists between the reticle 22, the reduction lens 23 and the substrate 24.
【００２４】なお、本発明の実施例では、基板４（２
４）上の１つのマーク９（２９）を所定距離ｌだけ移動
させ、レティクル２（２２）のＬだけ離れた窓７，８に
対する位置を計測しているが、基板４（２４）上のマー
ク９は、所定距離ｌだけ離れた２つのマークを、同時に
パターン検出することも可能である。また、同時にパタ
ーン検出し、そのレティクル２（２２）の窓７，８に対
するずれ量ΔＬを測長せず、所定の２つの窓７，８の決
められた位置に基板４（２４）上のマーク９が合うよう
に、縮小レンズ３（２３）を上下動させて制御すること
も応用例として考えられる。さらに、レティクル２（２
２）上の２ヶ所の窓７，８の位置は、所定の距離Ｌさえ
判れば、任意の場所で良く、２つのパターン検出器５，
６の原点の精度が良ければ、基板４（２４）上のマーク
９をレティクル２（２２）上の窓７，８に対して検出せ
ず、パターン検出器５，６の原点に対して検出しても良
い。In the embodiment of the present invention, the substrate 4 (2
4) One mark 9 (29) on the substrate 4 (24) is moved by a predetermined distance 1 to measure the position of the reticle 2 (22) with respect to the windows 7 and 8 separated by L. It is also possible for 9 to simultaneously detect the patterns of two marks separated by a predetermined distance l. Further, the pattern is detected at the same time, and the amount of deviation ΔL of the reticle 2 (22) with respect to the windows 7 and 8 is not measured, and the mark on the substrate 4 (24) is set at a predetermined position of the predetermined two windows 7 and 8. It is also considered as an application example that the reduction lens 3 (23) is moved up and down to control so that 9 is matched. In addition, reticle 2 (2
2) The positions of the upper two windows 7 and 8 may be arbitrary positions as long as the predetermined distance L is known.
If the precision of the origin of 6 is good, the mark 9 on the substrate 4 (24) is not detected to the windows 7 and 8 on the reticle 2 (22) but to the origin of the pattern detectors 5 and 6. May be.
【００２５】また、パターン検出器５，６は独立に２台
設けなくても、１台のパターン検出器を所定距離Ｌだけ
移動させ、あるいは、そのような機能や検出範囲を１台
のパターン検出器にもたせることも可能である。Further, even if two pattern detectors 5 and 6 are not provided independently, one pattern detector is moved by a predetermined distance L, or such a function and a detection range are detected by one pattern detector. It is also possible to put it in a container.
【００２６】本発明の実施例では、縮小レンズ３（２
３）とレティクル２（２２）との相対間隔調整を縮小レ
ンズ３（２３）を上下させることで達しているが、両者
の相対距離を調整すれば良いのであるから、縮小レンズ
３（２３）と同様に、光軸方向のみに可動な公知の案内
駆動手段でレティクル２（２２）を上下することで目的
を達することも可能である。In the embodiment of the present invention, the reduction lens 3 (2
3) and the reticle 2 (22) are adjusted by moving the reduction lens 3 (23) up and down, but it is sufficient to adjust the relative distance between the two. Similarly, it is possible to achieve the purpose by moving the reticle 2 (22) up and down by a known guide driving means that is movable only in the optical axis direction.
【００２７】なお、縮小倍率の調整によって、結像面の
最適焦点位置までの距離ａが変わり、それに伴って縮小
倍率も若干変わるが、通常、縮小レンズ３（２３）は、
テレセントリックな結像光学レンズを用いるため距離ａ
の変化による縮小倍率誤差や焦点ボケはわずかである。
従って、先ず、媒体物が変化した際には、基板４（２
４）上のマーク９（２９）への焦点合わせを行なった後
に、上述の方法で、縮小倍率誤差の補正を行ない、さら
に、高精度な補正を必要とする場合には、再度、焦点合
わせを行った後、縮小倍率の補正を繰返せば良いこと
は、容易に考えられる。Although the distance a to the optimum focus position of the image plane changes due to the adjustment of the reduction magnification, and the reduction magnification slightly changes accordingly, the reduction lens 3 (23) normally
Since a telecentric imaging optical lens is used, the distance a
There is little reduction magnification error and defocus due to changes in.
Therefore, first, when the medium object changes, the substrate 4 (2
4) After focusing on the mark 9 (29) on the upper side, the reduction magnification error is corrected by the above-described method, and when high-precision correction is required, the focusing is performed again. It is easily conceivable that the correction of the reduction ratio may be repeated after the operation.
【００２８】また、本発明の応用例としては、基板の位
置にパターン検出器を設置して、原画であるレティクル
の所定間隔のマークを計測して、縮小倍率を調整するこ
とも、既述の縮小倍率誤差を補正する方法を縮小投影レ
ンズを介して逆さに考えれば、容易に類推できる。Further, as an application example of the present invention, it is also possible to install a pattern detector at the position of the substrate, measure marks at predetermined intervals of the reticle as an original image, and adjust the reduction ratio. If the method of correcting the reduction magnification error is considered upside down through the reduction projection lens, it can be easily analogized.
【００２９】[0029]
【発明の効果】本発明によれば、投影露光光学系の距離
の変動や、任意の屈折率や厚さの媒体物が介在すること
等により生じる、基板上に縮小投影される原画パターン
の縮小倍率誤差を検出して、自動的に焦点位置を補正し
縮小倍率を補正することができるので、従来よりさらに
解像度を劣化されることなく、またパターンの高精度な
重ね合わせ精度を達成することにより高精度な半導体素
子を本発明の縮小投影露光方法により製造できることに
なる。According to the present invention, the reduction of the original image pattern to be reduced and projected on the substrate, which is caused by the variation of the distance of the projection exposure optical system, the presence of a medium having an arbitrary refractive index and thickness, and the like. Since it is possible to detect the magnification error and automatically correct the focus position and correct the reduction magnification, it is possible to achieve high-precision overlay accuracy of the pattern without further deterioration of resolution than before. A highly accurate semiconductor device can be manufactured by the reduction projection exposure method of the present invention.
【図１】本発明の原理を説明するための説明図。FIG. 1 is an explanatory diagram for explaining the principle of the present invention.
【図２】本発明による縮小投影露光装置の実施例の概略
構成図である。FIG. 2 is a schematic configuration diagram of an embodiment of a reduction projection exposure apparatus according to the present invention.
【図３】縮小投影光学系の原理説明図である。FIG. 3 is a diagram illustrating the principle of a reduction projection optical system.
１，２１…コンデンサレンズ、２，２２，４２…レティ
クル、３，２３，４３…縮小レンズ、４，２４，４４…
基板、５，６，２５…パターン検出器、７，８…窓、
９，９′，９″，２９…パターン、３０…Ｚ移動台、３
１…ＸＹ移動台、３２…案内部材、３３…駆動モータ、
３４…差動コイル、３５，３６…演算回路、３７…検出
回路、３８…レンズ上下制御回路。1, 21 ... Condenser lens, 2, 22, 42 ... Reticle, 3, 23, 43 ... Reduction lens, 4, 24, 44 ...
Substrate, 5, 6, 25 ... Pattern detector, 7, 8 ... Window,
9, 9 ', 9 ", 29 ... Pattern, 30 ... Z moving base, 3
DESCRIPTION OF SYMBOLS 1 ... XY moving base, 32 ... Guide member, 33 ... Drive motor,
34 ... Differential coil, 35, 36 ... Arithmetic circuit, 37 ... Detection circuit, 38 ... Lens up / down control circuit.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 黒崎 利栄 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 寺澤 恒男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 保坂 純男 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Riei Kurosaki 1-280 Higashi Koikeku, Kokubunji, Tokyo Metropolitan Research Center, Hitachi Ltd. (72) Tsuneo Terasawa 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Ltd. Central Research Laboratory (72) Inventor Sumio Hosaka 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory
Claims (4)
と基板の間に原画を配置する工程と、原画と基板との間
の媒体の変化に応じ上記原画の基板上における結像特性
を修正する工程と、上記基板に上記原画を結像投影する
工程とを含むことを特徴とする投影露光方法。1. A step of mounting a substrate at a predetermined position, a step of placing an original image between a light source and the substrate, and an image forming characteristic of the original image on the substrate according to a change in a medium between the original image and the substrate. And a step of image-projecting the original image on the substrate.
記媒体の屈折率の変化に応じて上記結像特性を修正する
ことを特徴とする投影露光方法。2. The projection exposure method according to claim 1, wherein the imaging characteristic is modified according to a change in the refractive index of the medium.
記修正工程として少なくとも焦点位置ないし倍率を修正
する上記修正工程であることを特徴とする投影露光方
法。3. The projection exposure method according to claim 1, wherein the correction step is the correction step of correcting at least a focal position or a magnification.
記修正工程として上記焦点位置を修正後、上記倍率を修
正する上記修正工程であることを特徴とする投影露光方
法。4. The projection exposure method according to claim 3, wherein the correction step is the correction step of correcting the focal position and then the magnification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4054756A JPH0712019B2 (en) | 1992-03-13 | 1992-03-13 | Projection exposure method and projection exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4054756A JPH0712019B2 (en) | 1992-03-13 | 1992-03-13 | Projection exposure method and projection exposure apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57084787A Division JPS58202449A (en) | 1982-05-21 | 1982-05-21 | Reduce-projecting exposure device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8012513A Division JP2653356B2 (en) | 1996-01-29 | 1996-01-29 | Projection exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0574680A true JPH0574680A (en) | 1993-03-26 |
| JPH0712019B2 JPH0712019B2 (en) | 1995-02-08 |
Family
ID=12979623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4054756A Expired - Lifetime JPH0712019B2 (en) | 1992-03-13 | 1992-03-13 | Projection exposure method and projection exposure apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712019B2 (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4890538A (en) * | 1972-12-29 | 1973-11-26 | ||
| JPS4922587A (en) * | 1972-06-26 | 1974-02-28 | ||
| JPS516565A (en) * | 1974-06-06 | 1976-01-20 | Ibm | |
| JPS5384278U (en) * | 1976-12-14 | 1978-07-12 | ||
| JPS53132270A (en) * | 1977-04-20 | 1978-11-17 | Thomson Csf | Optical device for projecting pattern |
| JPS5459883A (en) * | 1978-10-11 | 1979-05-14 | Hitachi Ltd | Pattern printing apparatus |
| JPS54114182A (en) * | 1978-02-27 | 1979-09-06 | Canon Inc | Alingment device |
-
1992
- 1992-03-13 JP JP4054756A patent/JPH0712019B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922587A (en) * | 1972-06-26 | 1974-02-28 | ||
| JPS4890538A (en) * | 1972-12-29 | 1973-11-26 | ||
| JPS516565A (en) * | 1974-06-06 | 1976-01-20 | Ibm | |
| JPS5384278U (en) * | 1976-12-14 | 1978-07-12 | ||
| JPS53132270A (en) * | 1977-04-20 | 1978-11-17 | Thomson Csf | Optical device for projecting pattern |
| JPS54114182A (en) * | 1978-02-27 | 1979-09-06 | Canon Inc | Alingment device |
| JPS5459883A (en) * | 1978-10-11 | 1979-05-14 | Hitachi Ltd | Pattern printing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0712019B2 (en) | 1995-02-08 |
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