JPH0575105A - Quantum device manufacturing method - Google Patents

Abstract

(57) [Abstract] [Purpose] To provide a method for manufacturing a quantum device comprising quantum dots sandwiched between two quantum wires and an insulating film. A first step of forming silicon oxide by implanting oxygen ions with an ion beam into a predetermined region of a silicon thin film on a single crystal silicon substrate formed on an insulating film, The second step of etching into the shape of [Effect] When the quantum device having the above-mentioned structure is formed, it is possible to manufacture a good device in which crystal defects are extremely small and electron scattering is suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a quantum device.

[0002]

2. Description of the Related Art In recent years, the progress of semiconductor devices has led to higher integration and finer design rules. With the progress of such miniaturization, there is an increasing need to develop a new element structure different from the conventional transistor structure. Devices utilizing the quantum effect have been studied as such new devices. (Journal of the Institute of Electronics, Information and Communication Engineers Vol.
72, No12, pp1387 to 1391, December 1989) In order to induce the quantum effect, there is a technique of forming dots or fine lines having dimensions on the order of the wavelength of electrons, and a technique of combining them to form a circuit. Development is needed.

A quantum device having a structure as in the present invention has not been proposed at present, but a quantum device having a completely new structure is proposed here.

[0004]

DISCLOSURE OF THE INVENTION The present invention provides a manufacturing method capable of easily forming a quantum device having a small amount of electron scattering in a quantum wire.

[0005]

A method of manufacturing a quantum device according to the present invention comprises a focused ion beam on a predetermined region of a silicon thin film on a single crystal silicon substrate formed on an insulating film,
It is a method of manufacturing a quantum device including a first step of forming a silicon oxide by implanting oxygen ions and a second step of etching a silicon thin film into a predetermined shape.

[0006]

According to the present invention, a favorable quantum device can be manufactured by forming a quantum dot and a quantum wire having very few crystal defects and excellent controllability of the insulating film thickness by the above-mentioned structure.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a quantum device according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a method of manufacturing a quantum device according to the first embodiment of the present invention. In FIG. 1, 1 is a silicon substrate, 2 is a silicon oxide film, 3 is a single crystal silicon film, 4 is an ion beam, 5 is a silicon oxide, 6 is a resist, 7 is a quantum wire, and 8 is a quantum dot. The manufacturing flow of the method for manufacturing the quantum device configured as described above will be described below.

In FIG. 1 (a), a silicon oxide film 2 and a single crystal silicon film 3 are formed on a silicon substrate 1. In FIG. 1B, a silicon oxide 5 is formed by implanting oxygen ions into a predetermined region of the single crystal silicon 3 with an ion beam 4. Figure 1 (c) shows
FIG. 1D is a top view showing a cross-sectional view after implanting a predetermined region with the ion beam 4. In FIG. 1E, after forming the resist 6 into a predetermined shape, a predetermined region of the single crystal silicon film 3 is removed by dry etching. Figure 1
In (f), the quantum wires 7 and the quantum dots 8 are obtained by removing the resist 6.

In the present embodiment, since the single crystal silicon film 3 having excellent crystallinity is used for both the quantum wires 7 and the quantum dots 8, both the obtained thin wires and dots have little electron scattering and excellent mobility. Become. Further, since the silicon oxide 5 is formed by the ion beam 4, its film thickness depends on the beam diameter, and an arbitrary film thickness can be obtained by narrowing the beam.

As described above, according to the present embodiment, by forming the quantum dot inter-connecting portion having very few crystal defects, a quantum element having less electron scattering and excellent controllability of the tunnel thickness can be obtained. It can be manufactured.

FIG. 2 shows a method of manufacturing a quantum device according to the second embodiment of the present invention. In FIG. 2, 1 is a silicon substrate, 2 is a silicon oxide film, 3 is a single crystal silicon film, 4 is an ion beam, 5 is a silicon oxide, 6 is a resist, 7 is a quantum wire, and 8 is a quantum dot. The manufacturing flow of the method for manufacturing the quantum device configured as described above will be described below.

In FIG. 2A, a silicon oxide film 2 and a single crystal silicon film 3 are formed on a silicon substrate 1. In FIG. 2B, after the resist 6 is formed into a predetermined shape, the single crystal silicon film 3 is dry-etched.
Remove a predetermined area of. In FIG. 2C, the resist 6 is removed and the quantum wire 7 is obtained. In FIG. 2D, the silicon oxide 5 is formed by implanting oxygen ions into the predetermined region of the quantum wire 7 with the ion beam 4. In FIG. 2 (e), the quantum wire 7 and the quantum dot 8
To get

In the present embodiment, since the single crystal silicon film 3 having excellent crystallinity is used for both the quantum wires 7 and the quantum dots 8, both the obtained thin wires and dots have low electron scattering and excellent mobility. Become. Further, since the silicon oxide 5 is formed by the ion beam 4, its film thickness depends on the beam diameter, and an arbitrary film thickness can be obtained by narrowing the beam.

As described above, according to the present embodiment, by forming the quantum dot connection portion having very few crystal defects, there is little electron scattering, and the controllability of the tunnel thickness is excellent. Can be manufactured

[0016]

INDUSTRIAL APPLICABILITY As described above, the present invention can provide a technique for producing a quantum device having very few crystal defects and little electron scattering.

[Brief description of drawings]

FIG. 1 is a diagram showing a method of manufacturing a quantum device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a method of manufacturing a quantum device according to the second embodiment of the present invention.

[Explanation of symbols]

 1 silicon substrate 2 silicon oxide film 3 single crystal silicon film 4 ion beam 5 silicon oxide 6 resist 7 quantum wire 8 quantum dot

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiko Hirai 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Masaaki Niwa, 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. 72) Inventor Atsuo Wada 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) In Ren Morimoto, 1006 Kadoma, Kadoma City Osaka Prefecture

Claims (2)

[Claims] 1. A first step of forming silicon oxide by implanting oxygen ions by a focused ion beam into a predetermined region of a silicon thin film on a single crystal silicon substrate formed on an insulating film, and silicon. A method of manufacturing a quantum device, comprising a second step of etching a thin film into a predetermined shape. 2. A first step of etching a single crystal silicon thin film formed on an insulating film into a predetermined shape, and a silicon oxide by injecting oxygen ions into a predetermined region of the silicon thin film by a focused ion beam. Second to form things
A method for manufacturing a quantum device, which comprises the steps of: