JPH057823B2 - - Google Patents

Info

Publication number
JPH057823B2
JPH057823B2 JP58158306A JP15830683A JPH057823B2 JP H057823 B2 JPH057823 B2 JP H057823B2 JP 58158306 A JP58158306 A JP 58158306A JP 15830683 A JP15830683 A JP 15830683A JP H057823 B2 JPH057823 B2 JP H057823B2
Authority
JP
Japan
Prior art keywords
ion
electron
sample
ion source
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58158306A
Other languages
Japanese (ja)
Other versions
JPS6049546A (en
Inventor
Akio Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP58158306A priority Critical patent/JPS6049546A/en
Publication of JPS6049546A publication Critical patent/JPS6049546A/en
Publication of JPH057823B2 publication Critical patent/JPH057823B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 本発明は、試料面をイオンビームと電子ビーム
の両方で照射し、イオンビームによつて試料面を
削りながら電子ビームの照射によつて励起された
試料から放射されるオージエ電子のエネルギー分
析を行い、或は試料から出るX線について分光分
析を行い、更に或はイオンビーム照射によつて試
料面から出る二次イオンの質量分析を行う等の各
種の分析方法を実施することができる複合分析装
置に関する。
[Detailed Description of the Invention] (a) Industrial Application Field The present invention irradiates a sample surface with both an ion beam and an electron beam, and scrapes the sample surface with the ion beam while irradiating the sample with the electron beam. Energy analysis of Auger electrons emitted from an excited sample, spectroscopic analysis of X-rays emitted from the sample, and mass spectrometry of secondary ions emitted from the sample surface by ion beam irradiation. This invention relates to a composite analysis device that can perform various analysis methods such as the following.

(ロ) 従来技術 従来、イオンエツチングをしながらオージエ電
子分光を行う分析装置では、第1図に示すように
イオン銃Giと電子銃Geとが別になつており、イ
オンビームを試料面に収束させるイオン光学系と
電子ビームを試料面に収束させる電子光学系とは
夫々の光軸AiとAeが試料S面上で交差するよう
に構成されていた。この種の分析装置では云うま
でもなく、イオンビームと電子ビームとは試料面
の同一個所を照射するようになつていることが必
要であるが、上述した従来装置ではイオン光学系
と電子光学系とが別になつているから両方のビー
ムが試料面の同一個所を照射するようにするため
の装置の調整が大へん困難で、調整には多大の労
力を費していた。またAMはオージエ電子分光用
のエネルギー分析器であるが、イオン源装置が空
間を占領しているので、他の分析装置を配置する
スペースが得難い。
(b) Prior art Conventionally, in analyzers that perform Auger electron spectroscopy while performing ion etching, the ion gun Gi and electron gun Ge are separate, as shown in Figure 1, and the ion gun is focused on the sample surface. The ion optical system and the electron optical system that converges the electron beam onto the sample surface were configured such that their respective optical axes Ai and Ae intersected on the sample S surface. Needless to say, in this type of analyzer, the ion beam and electron beam must be designed to irradiate the same spot on the sample surface, but the conventional equipment described above requires an ion optical system and an electron optical system. Since the beams are separated from each other, it is extremely difficult to adjust the equipment so that both beams illuminate the same spot on the sample surface, and a great deal of effort is expended on the adjustment. Additionally, AM is an energy analyzer for Augier electron spectroscopy, but since the ion source device occupies space, it is difficult to find space for other analysis devices.

(ハ) 目的 本発明は二種の荷電粒子ビームを用いる分析装
置において、二種の荷電粒子ビームが必然的に試
料の同一個所を照射するような構成を提供するこ
とを目的とするもので、これによつて上述した二
種のビームが試料面の同一個所を照射するように
するための調整の困難を解消し、空間の利用率を
高めて始めに述べたような複合分析装置を可能に
した。
(C) Purpose The purpose of the present invention is to provide an analyzer using two types of charged particle beams, with a configuration in which the two types of charged particle beams inevitably irradiate the same part of a sample. This eliminates the difficulty of adjusting the two types of beams mentioned above to irradiate the same spot on the sample surface, increases the space utilization rate, and makes it possible to create a complex analysis device like the one mentioned at the beginning. did.

(ニ) 構成 イオン銃から負イオンを取出すとき、同時に電
子も引出されて来る。本発明はこの点に着眼し、
イオン銃と電子銃とを共用し、この共用の銃を含
む一つの光軸上に静電レンズと磁気レンズとを配
置し、イオンビームと電子ビームとを共軸的に形
成して試料を照射するようにした複合分析装置を
提供するものである。
(d) Configuration When negative ions are extracted from the ion gun, electrons are also extracted at the same time. The present invention focuses on this point,
An ion gun and an electron gun are shared, and an electrostatic lens and a magnetic lens are arranged on one optical axis that includes the shared gun, and the ion beam and electron beam are coaxially formed to irradiate the sample. The purpose of the present invention is to provide a composite analysis device designed to do the following.

例えばイオン源としてデユオプラズマトロンを
用い負イオンを取出す場合、10KVで作動させた
ときイオン電流は10μA程度、これに対して電子
電流は1mA程度である。同じ加速電圧の場合、
静電レンズはイオンに対しても電子に対しても同
じ光学的特性を示すが、磁気レンズは荷電粒子の
質量によつて光学的特性が異る。従つて一軸上に
静電レンズと磁気レンズを配置することによつ
て、同一銃から引出された負イオンと電子の量比
を任意に制御して、試料の同一個所をイオンビー
ムと電子ビームで照射することが可能となる。
For example, when extracting negative ions using a Duoplasmatron as an ion source, the ion current is about 10 μA when operated at 10 KV, whereas the electron current is about 1 mA. For the same accelerating voltage,
Electrostatic lenses exhibit the same optical properties for both ions and electrons, but magnetic lenses have different optical properties depending on the mass of the charged particles. Therefore, by arranging an electrostatic lens and a magnetic lens on one axis, the ratio of negative ions and electrons extracted from the same gun can be controlled arbitrarily, and the same part of the sample can be targeted with an ion beam and an electron beam. It becomes possible to irradiate.

(ホ) 実施例 第2図は本発明の一実施例を示す。1はイオン
銃と電子銃と兼用したイオン源のデユオプラズマ
トロンである。21,22は磁気レンズ、31,
32は静電レンズで、これらはイオン源1を含む
光軸A上に配置されている。Sは試料である。4
は荷電粒子のエネルギー分析器、5は電子検出器
である。エネルギー分析器4は試料Sの表面と光
軸Aとの交点Oとにらむように設置されており、
O点から放出された電子のうちエネルギー分析器
4に印加された直流電圧に応じた特定のエネルギ
ーを持つたものがスリツト6上に収束するように
なつており、エネルギー分析器に印加される直流
電圧に微小振幅の交流電圧を重畳し、電子検出器
5の出力から同じ周波数の交流成分を取出すこと
によつてオージエ電子検出信号を得ることができ
る。図で電子検出器5を4重極質量分析器とし、
その後にイオン検出器を配置した構成にすると試
料Sをイオンビームで照射したとき、試料から放
出される2次イオンの質量分析を行うことができ
る。実際問題として、電子検出器5を4重極質量
分析器と交換することは構造上困難であるから、
この実施例では図の都合上示してないが、2次イ
オン質量分析用のエネルギー分析器がO点をにら
むように設置されており、その後に質量分析器及
びイオン検出器が配置してある。7は試料S上の
O点から放射されるX線を分光する分光結晶、8
はX線検出器で、これらはO点をにらむX線分光
器を構成している。
(e) Embodiment FIG. 2 shows an embodiment of the present invention. 1 is an ion source dual plasmatron that serves as both an ion gun and an electron gun. 21, 22 are magnetic lenses, 31,
32 is an electrostatic lens, and these are arranged on the optical axis A that includes the ion source 1. S is a sample. 4
5 is a charged particle energy analyzer, and 5 is an electron detector. The energy analyzer 4 is installed so as to face the intersection O between the surface of the sample S and the optical axis A.
Of the electrons emitted from point O, those with a specific energy that corresponds to the DC voltage applied to the energy analyzer 4 converge on the slit 6, and the DC voltage applied to the energy analyzer 4 converges on the slit 6. An Auger electronic detection signal can be obtained by superimposing a minute amplitude AC voltage on the voltage and extracting an AC component of the same frequency from the output of the electronic detector 5. In the figure, the electron detector 5 is a quadrupole mass spectrometer,
If the configuration is such that an ion detector is arranged after that, when the sample S is irradiated with an ion beam, it is possible to perform mass analysis of secondary ions emitted from the sample. As a practical matter, it is structurally difficult to replace the electron detector 5 with a quadrupole mass spectrometer.
Although not shown in this embodiment for reasons of illustration, an energy analyzer for secondary ion mass spectrometry is installed so as to face point O, and a mass spectrometer and an ion detector are placed behind it. 7 is a spectroscopic crystal for dispersing the X-rays emitted from point O on the sample S; 8
is an X-ray detector, and these constitute an X-ray spectrometer that looks at the O point.

第3図は上述実施例におけるイオン及び電子光
学系の作用を説明する図である。図で実線で示し
たIはイオンビーム、点線で示したEは電子ビー
ムである。イオン源1から出射するイオンも電子
も同じ加速電圧で加速されているから同じエネル
ギーを持つている。このような場合磁気レンズは
電子に比し著るしく質量が大であるイオンに対し
ては殆んど作用せず、電子ビームEだけが磁気レ
ンズ21でF1点に収束する。磁気レンズ22内
に絞り9が配置してあり、レンズ21の強さを調
節してF1点と絞り9との間の距離を変えること
によつて、絞り9を通過する電子ビームの電流を
調節することができる。磁気レンズ22は絞り9
を通過した電子ビームの広がり角αをイオンビー
ムIの広り角βと略一致させ、F1点の電子線虚
像をイオン電子共通線源Qに形成するように作用
する。このようにして広がり角が一致したイオン
ビームと電子ビームは静電レンズ31,32によ
つて全く同じ影響を受けて試料S上のO点に収束
せしめられる。
FIG. 3 is a diagram illustrating the operation of the ion and electron optical systems in the above embodiment. In the figure, I shown by a solid line is an ion beam, and E shown by a dotted line is an electron beam. Ions and electrons emitted from the ion source 1 have the same energy because they are accelerated by the same acceleration voltage. In such a case, the magnetic lens has little effect on ions whose mass is significantly larger than that of electrons, and only the electron beam E is focused on point F1 by the magnetic lens 21. An aperture 9 is arranged within the magnetic lens 22, and by adjusting the strength of the lens 21 and changing the distance between the F1 point and the aperture 9, the current of the electron beam passing through the aperture 9 can be adjusted. can do. The magnetic lens 22 has an aperture of 9
The spread angle α of the electron beam that has passed through the ion beam I is made to substantially match the spread angle β of the ion beam I, and a virtual image of the electron beam at point F1 is formed in the ion-electron common line source Q. The ion beam and electron beam, whose spread angles match in this way, are influenced by the electrostatic lenses 31 and 32 in exactly the same way, and are converged to point O on the sample S.

(ヘ) 効果 本発明は上述したようにイオンビームと電子ビ
ームとで試料を照射する分析装置において、イオ
ン源と電子源とを共通にし、同一光学系によつて
試料上に収束させるから、従来例のような困難な
組立て調整の作業なしに、正確に試料上の同一点
をイオンビームと電子ビームで照射することがで
き、イオン光学系と電子光学系が共通であるか
ら、試料の周囲全部を各種分析装置の配置空間と
することができ、イオンエツチングで試料面を削
除しながらオージエ電子分光分析でけでなく、X
線分光、2次イオン質量分析等種々な分析法を同
時に実行することができる。
(f) Effects As described above, the present invention uses a common ion source and an electron source in an analyzer that irradiates a sample with an ion beam and an electron beam, and the electron beams are focused on the sample by the same optical system. It is possible to accurately irradiate the same point on the sample with the ion beam and electron beam without the difficult assembly and adjustment work as in the example above, and since the ion optical system and electron optical system are common, the entire periphery of the sample can be irradiated with the ion beam and electron beam. can be used as a space for various analytical devices, and can be used not only for Auger electron spectroscopy while removing the sample surface by ion etching, but also for X-ray electron spectroscopy.
Various analysis methods such as line spectroscopy and secondary ion mass spectrometry can be performed simultaneously.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の装置の側面図、第2図は本発
明の一実施例の側面図、第3図は同実施例の荷電
粒子線光学系の作用説明図である。 1……イオン源と電子源兼用のイオン源、2
1,22……磁気レンズ、31,32……静電レ
ンズ、4……エネルギー分析器、5……電子検出
器、7……X線分光結晶、8……X線検出器、9
……絞り、S……試料、E……電子ビーム、I…
…イオンビーム。
FIG. 1 is a side view of a conventional device, FIG. 2 is a side view of an embodiment of the present invention, and FIG. 3 is an explanatory diagram of the operation of the charged particle beam optical system of the same embodiment. 1...Ion source that serves as both an ion source and an electron source, 2
1, 22... Magnetic lens, 31, 32... Electrostatic lens, 4... Energy analyzer, 5... Electron detector, 7... X-ray spectroscopy crystal, 8... X-ray detector, 9
...Aperture, S...Sample, E...Electron beam, I...
...Ion beam.

Claims (1)

【特許請求の範囲】[Claims] 1 イオン銃と電子銃とを兼ねたイオン源装置
と、このイオン源装置を含む一つの光軸上に配置
された磁気レンズと静電レンズと、上記光軸上に
配置された試料面のイオンビーム及び電子ビーム
照射点をにらむように同試料の周囲に配置される
複数種の分析装置とよりなり、上記光軸上で上記
イオン源装置に近い側に上下2段の軸レンズと絞
りを配置し、これらの磁気レンズと絞りの下方に
静電レンズを配置し、上記上段の磁気レンズで電
子ビームを上記光軸上で上下の磁気レンズの間に
収束させ、その収束点の位置を調節させ、下段の
磁気レンズで上記収束点の虚像を上記イオン源装
置のイオン点線源の位置に形成させるようにした
ことを特徴とする複合分析装置。
1. An ion source device that serves as both an ion gun and an electron gun, a magnetic lens and an electrostatic lens that are placed on one optical axis including this ion source device, and an ion source on the sample surface that is placed on the optical axis. It consists of multiple types of analyzers placed around the same sample so as to face the beam and electron beam irradiation points, and two axial lenses and an aperture are placed on the optical axis near the ion source device. Then, an electrostatic lens is placed below these magnetic lenses and the aperture, and the upper magnetic lens converges the electron beam between the upper and lower magnetic lenses on the optical axis, and the position of the convergence point is adjusted. A composite analyzer characterized in that a virtual image of the convergent point is formed at the position of the ion point source of the ion source device by a lower magnetic lens.
JP58158306A 1983-08-29 1983-08-29 Complex analytical device Granted JPS6049546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58158306A JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58158306A JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Publications (2)

Publication Number Publication Date
JPS6049546A JPS6049546A (en) 1985-03-18
JPH057823B2 true JPH057823B2 (en) 1993-01-29

Family

ID=15668742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58158306A Granted JPS6049546A (en) 1983-08-29 1983-08-29 Complex analytical device

Country Status (1)

Country Link
JP (1) JPS6049546A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088061Y2 (en) * 1988-07-11 1996-03-06 富士ゼロックス株式会社 Roller polishing equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145186A (en) * 1974-05-10 1975-11-21
JPS58110956U (en) * 1982-01-22 1983-07-28 株式会社日立製作所 Charged particle irradiation device

Also Published As

Publication number Publication date
JPS6049546A (en) 1985-03-18

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