JPH0580100B2 - - Google Patents
Info
- Publication number
- JPH0580100B2 JPH0580100B2 JP57071795A JP7179582A JPH0580100B2 JP H0580100 B2 JPH0580100 B2 JP H0580100B2 JP 57071795 A JP57071795 A JP 57071795A JP 7179582 A JP7179582 A JP 7179582A JP H0580100 B2 JPH0580100 B2 JP H0580100B2
- Authority
- JP
- Japan
- Prior art keywords
- objective lens
- probe diameter
- sample
- focal length
- charged particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000523 sample Substances 0.000 claims description 38
- 230000005284 excitation Effects 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
本発明はX線マイクロアナライザのような試料
を電子線或はイオンビームで照射して試料の微小
部分を分析する装置において照射荷電粒子線のプ
ローブ径即ち試料面における照射荷電粒子ビーム
の断面径を設定する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus such as an X-ray microanalyzer that analyzes a minute portion of a sample by irradiating the sample with an electron beam or an ion beam. This invention relates to a method for setting the cross-sectional diameter of a charged particle beam.
上述した分析装置では荷電粒子線で照射されて
いる領域の平均的な分析結果が得られるので、分
析目的によつて荷電粒子線プローブの径を適当に
設定することは重要なことである。従来はこのプ
ローブ径の設定に次のような方法を用いていた。
X線マイクロアナライザ等には試料面を目視観察
したり試料の位置決めをするために光学顕微鏡が
付設されているので、試料位置に螢光を発する試
料をセツトし、荷電粒子線で照射して螢光を発し
ているスポツトを光学顕微鏡で見ながらスポツト
径が所期の直径になるように対物レンズの励磁電
流を調節し、その後螢光試料と分析しようとする
試料とを交換する。このような方法は大へん煩雑
であり時間がかゝつて甚だ非能率である。 Since the above-mentioned analyzer provides an average analysis result of the area irradiated with the charged particle beam, it is important to appropriately set the diameter of the charged particle beam probe depending on the purpose of analysis. Conventionally, the following method was used to set the probe diameter.
X-ray microanalyzers and the like are equipped with optical microscopes for visually observing the sample surface and positioning the sample, so a sample that emits fluorescence is set at the sample position and irradiated with a charged particle beam to fluoresce. While observing the light emitting spot with an optical microscope, the excitation current of the objective lens is adjusted so that the spot diameter becomes the desired diameter, and then the fluorescent sample and the sample to be analyzed are exchanged. Such a method is very complicated, time consuming, and extremely inefficient.
本発明は所望のプローブ径を指定すれば自動的
にプローブ径がそのように調整されるようにした
方法を提供しようとするものである。以下図面に
よつて本発明を説明する。 The present invention aims to provide a method in which the probe diameter is automatically adjusted by specifying a desired probe diameter. The present invention will be explained below with reference to the drawings.
第1図において、1は対物レンズの主面であ
る。2は上段レンズによる荷電粒子線の収束点で
あり、この点の像が対物レンズによつて試料空間
に形成される。3は分析試料である。上記収束点
2から対物レンズ主面1での距離をa、同主面1
から試料3表面までの距離をloとし、対物レンズ
主面1から同レンズによる収束点2の像4までの
距離をbとする。また対物レンズの主面1におけ
る有効絞り径を2Rとし、試料3表面における照
射領域の径即ちプローブ径を2rとすると、比例の
関係で
r/R=b−lo/b故にb=R・lo/R−r…
…(1)
(1)式でR及びloは装置によつて決まつている定
数であり、rは所望のプローブ半径でこれは分析
を行う人が自分で決めるものである。そこで(1)式
によつてbを幾らにしたらよいかが求まる。この
bを与えるような対物レンズの焦点距離をfとす
ると、
1/f=1/a+1/b故にf=ab/a+b
からbに(1)式を代入して
f=a(Rlo)/(R−r)/a+(Rlo)/(
R−r)≡P(r)
で焦点距離fはプローブ半径rだけの関数P(r)で
ある。こゝで焦点距離fは例えば電磁レンズの場
合、励磁コイルのアンペアターンNiとの間には
第2図に示すような関係があることが知られてい
る。こゝで fminはレンズポールピースの形状
によつて決まる最小焦点距離、Ni maxは電子線
加速電圧をVとして13.5√なる値である。焦点
距離と励磁コイルのアンペアターンとの間にはア
ンペアターンの或る範囲で一価単調な関数関係が
あるので、焦点距離を決めると必要なアンペアタ
ーンが一つに決まり、従つて励磁電流iが一つに
決まる。即ち励磁電流iは
i/√V=Q(f)=Q(P(r))≡R(r)
上式よりi=√R(r)によつて粒子加速電圧と
プローブ径が決まると対物レンズの励磁電流が定
まる。上式に従つて実際に励磁電流iを決めるに
は関数R(r)の適当な近似式を作つておいて計算に
よつて決めてもよいが、Vを変えて何本かのiと
rとの関係のカーブを画いておき図上で決めても
よい。 In FIG. 1, 1 is the main surface of the objective lens. Reference numeral 2 indicates a point at which the charged particle beam is converged by the upper lens, and an image of this point is formed in the sample space by the objective lens. 3 is an analysis sample. The distance from the convergence point 2 to the objective lens main surface 1 is a, and the distance from the objective lens main surface 1 is
The distance from to the surface of the sample 3 is lo, and the distance from the objective lens main surface 1 to the image 4 of the convergence point 2 by the same lens is b. Also, if the effective aperture diameter on the main surface 1 of the objective lens is 2R, and the diameter of the irradiation area on the surface of the sample 3, that is, the probe diameter is 2r, then the proportional relationship is r/R=b-lo/b, so b=R・lo /R-r…
...(1) In equation (1), R and lo are constants determined by the device, and r is the desired probe radius, which is determined by the person conducting the analysis. Therefore, using equation (1), we can find out how much b should be. If the focal length of the objective lens that gives this b is f, then 1/f=1/a+1/b, so by substituting equation (1) for b from f=ab/a+b, we get f=a(Rlo)/( R-r)/a+(Rlo)/(
R−r)≡P(r), and the focal length f is a function P(r) of only the probe radius r. It is known that, for example, in the case of an electromagnetic lens, there is a relationship between the focal length f and the ampere turns Ni of the excitation coil as shown in FIG. Here, fmin is the minimum focal length determined by the shape of the lens pole piece, and Nimax is a value of 13.5√, where V is the electron beam acceleration voltage. Since there is a monotonic functional relationship between the focal length and the ampere-turns of the excitation coil within a certain range of ampere-turns, determining the focal length determines the required ampere-turns, and therefore the excitation current i is determined as one. That is, the excitation current i is i/√V=Q(f)=Q(P(r))≡R(r) From the above equation, if the particle acceleration voltage and probe diameter are determined by i=√R(r), the objective The excitation current of the lens is determined. To actually determine the excitation current i according to the above formula, it is possible to create an appropriate approximation formula for the function R(r) and determine it by calculation, but by changing V It is also possible to draw a curve of the relationship with and determine it on the diagram.
第3図は上記式によりプローブ径を指定したと
き自動的に対物レンズの励磁電流iが所定値に設
定されるようにした本発明の一実施例を示す。5
は関数発生器でポテンシヨメータ6の摺動子の位
置をプローブ径の目盛によつて設定するとプロー
ブ径に比例した電圧信号が関数発生器に入力され
る。7は加速電圧検出器である。関数発生器5は
入力されたプローブ径に対しlogR(r)を出力する。
8は対数変換器で加速電圧検出器7の出力を対数
変換する。7,8の構成は加速電圧の設定と連動
してlog√を得るようにした可変抵抗を用いて
もよい。関数発生器5の出力と対数変換器8の出
力とが加算回路9で加算され、加算回路9の出力
を逆対数変換器10で逆対数変換して対物レンズ
励磁電流制御回路11に入力させる。この実施例
はアナログ方式によるものであるが、デイジタル
方式によつても可能であり、コンピユータを用い
ることもできる。また今までの説明は対物レンズ
による荷電粒子線の収束点を試料の下方に位置さ
せる場合についてのものであるが、試料の上方に
位置させる場合でも全く同じ考え方が適用できる
ことは云うまでもない。 FIG. 3 shows an embodiment of the present invention in which the excitation current i of the objective lens is automatically set to a predetermined value when the probe diameter is specified using the above formula. 5
is a function generator, and when the position of the slider of the potentiometer 6 is set according to the scale of the probe diameter, a voltage signal proportional to the probe diameter is input to the function generator. 7 is an accelerating voltage detector. The function generator 5 outputs logR(r) for the input probe diameter.
A logarithmic converter 8 logarithmically converts the output of the accelerating voltage detector 7. In the configurations 7 and 8, a variable resistor that obtains log√ in conjunction with the setting of the acceleration voltage may be used. The output of the function generator 5 and the output of the logarithmic converter 8 are added in an adder circuit 9, and the output of the adder circuit 9 is antilogarithmically converted in an antilogarithmic converter 10 and input to an objective lens excitation current control circuit 11. Although this embodiment is based on an analog system, it is also possible to use a digital system, and a computer can also be used. Furthermore, although the explanation so far has concerned the case where the convergence point of the charged particle beam by the objective lens is located below the sample, it goes without saying that the exact same concept can be applied even when the point is located above the sample.
本発明によれば荷電粒子線のプローブ径を指定
することにより対物レンズの焦点距離(電磁レン
ズの場合であれば励磁電流)を直接決定すること
ができ、一々測定試料と螢光試料とを交換すると
云つた手間が省けて分析操作の能率が向上し、更
に分析の自動化(例えばプローブ径を種々に決め
ておいてプログラムにより色々なプローブ径を採
択して分析を行つて行く等)が容易にできる利点
を有する。 According to the present invention, by specifying the probe diameter of the charged particle beam, the focal length of the objective lens (in the case of an electromagnetic lens, the excitation current) can be directly determined, and the measurement sample and fluorescent sample can be exchanged one by one. This eliminates the above-mentioned labor and improves the efficiency of analysis operations, and also makes it easier to automate analysis (for example, decide on various probe diameters and use a program to select various probe diameters and perform analysis). It has the advantage of being able to
第1図は本発明方法の原理を説明する図、第2
図は電磁レンズの焦点距離とコイルのアンペアタ
ーンとの関係を示すグラフ、第3図は本発明方法
を実行する装置の一例のブロツク図である。
1……対物レンズ主面、2……上段レンズによ
る荷電粒子線ビームの収束点、3……試料、4…
…対物レンズによる2の点の像。
Figure 1 is a diagram explaining the principle of the method of the present invention, Figure 2 is a diagram explaining the principle of the method of the present invention.
The figure is a graph showing the relationship between the focal length of the electromagnetic lens and the ampere turns of the coil, and FIG. 3 is a block diagram of an example of an apparatus for carrying out the method of the present invention. DESCRIPTION OF SYMBOLS 1... Main surface of objective lens, 2... Convergence point of charged particle beam by upper lens, 3... Sample, 4...
...An image of two points by an objective lens.
Claims (1)
をずらせることにより任意設定する場合におい
て、指定プローブ径から対物レンズ焦点距離とプ
ローブ径との関数関係を用いて対物レンズ焦点距
離に対応する信号を発生する手段により出力され
る信号によつて対物レンズ励磁電流を制御するこ
とを特徴とする荷電粒子線のプローブ径設定方
法。1 When the probe diameter is arbitrarily set by shifting the objective lens focus with respect to the sample position, a signal corresponding to the objective lens focal length is generated from the specified probe diameter using the functional relationship between the objective lens focal length and the probe diameter. A method for setting a probe diameter for a charged particle beam, the method comprising: controlling an objective lens excitation current by a signal outputted by means for controlling the probe diameter of a charged particle beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57071795A JPS58188041A (en) | 1982-04-27 | 1982-04-27 | How to set probe diameter for charged particle beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57071795A JPS58188041A (en) | 1982-04-27 | 1982-04-27 | How to set probe diameter for charged particle beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58188041A JPS58188041A (en) | 1983-11-02 |
| JPH0580100B2 true JPH0580100B2 (en) | 1993-11-05 |
Family
ID=13470850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57071795A Granted JPS58188041A (en) | 1982-04-27 | 1982-04-27 | How to set probe diameter for charged particle beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58188041A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2632828B2 (en) * | 1987-02-17 | 1997-07-23 | 日本電信電話株式会社 | Automatic controller for charged beam |
| JP2636381B2 (en) * | 1988-11-11 | 1997-07-30 | 日本電子株式会社 | Electron beam equipment |
| JPH1027563A (en) * | 1996-07-10 | 1998-01-27 | Jeol Ltd | Scanning electron microscope |
-
1982
- 1982-04-27 JP JP57071795A patent/JPS58188041A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58188041A (en) | 1983-11-02 |
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