JPH05882B2 - - Google Patents
Info
- Publication number
- JPH05882B2 JPH05882B2 JP57044967A JP4496782A JPH05882B2 JP H05882 B2 JPH05882 B2 JP H05882B2 JP 57044967 A JP57044967 A JP 57044967A JP 4496782 A JP4496782 A JP 4496782A JP H05882 B2 JPH05882 B2 JP H05882B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- threshold voltage
- frequency
- transistors
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
本発明は、周波数の電源電圧依存性を小さくか
つ低消費電流化をはかつた相補型回路に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a complementary circuit in which frequency dependence on power supply voltage is reduced and current consumption is reduced.
水晶腕時計などのように水晶振動子の基準発振
周波数を分周して使用し、また、小型の電池を電
源として使用する機器においては、その周波数の
電源電圧依存性を極力小さくすること、およびそ
の消費電流を極力低く押えることが極めて重要な
課題である。 In devices such as crystal watches that divide the reference oscillation frequency of a crystal oscillator and use a small battery as a power source, it is important to minimize the dependence of the frequency on the power supply voltage. It is extremely important to keep current consumption as low as possible.
本発明はかかる相補MOS型集積回路を構成す
るＰチヤネルMOS型トランジスタおよびＮチヤ
ネルMOS型トランジスタの少なくとも一方の閾
値電圧を２種類以上に設定し、水晶発振回路を含
む高周波動作回路を高い閾値電圧のトランジスタ
で作ることによつて、周波数の電源電圧依存性の
向上および低消費電流化を図ることを目的とする
ものである。すなわち、本発明は高周波回路部分
を高い閾値電圧のトランジスタで構成し、電源電
圧依存性及び低消費電流化を図るとともに高周波
動作回路以外の回路を構成するMOS型トランジ
スタの閾値電圧を高周波動作回路の閾値電圧より
低くして、高周波動作回路以外の占有面積を小さ
くすることによつて、集積回路全体の高集積化を
図らんとするものである。 The present invention sets the threshold voltage of at least one of the P-channel MOS transistor and the N-channel MOS transistor constituting the complementary MOS integrated circuit to two or more types, and operates a high-frequency operation circuit including a crystal oscillation circuit with a high threshold voltage. The purpose of this is to improve the dependence of frequency on power supply voltage and reduce current consumption by using transistors. That is, the present invention configures the high-frequency circuit portion with transistors with high threshold voltages to reduce power supply voltage dependence and current consumption. By setting the voltage lower than the threshold voltage and reducing the area occupied by components other than the high-frequency operation circuit, it is possible to increase the degree of integration of the entire integrated circuit.
以下に本発明を従来例と比較しながら詳細に説
明する。 The present invention will be explained in detail below while comparing it with a conventional example.
第１図は、32768KHz水晶発振回路を有する相
補MOS型電子時計の従来例をブロツク的に示す
もので、水晶振動子１、発振容量２，３、発振回
路、分周回路を含む高周波動作回路４、論理回路
５、出力バツフア６、および出力端子７からな
る。上記各回路ブロツク４，５および６における
能動素子のＰチヤネルMOS型トランジスタおよ
びＮチヤネルMOS型トランジスタはそれぞれ構
成ないしは製造条件の規正によつて決まる固有の
閾値電圧を有し、しかも、比較的低い閾値電圧の
ものにそろえられているのが普通である。 Fig. 1 shows in block form a conventional example of a complementary MOS type electronic timepiece having a 32768KHz crystal oscillation circuit.A high frequency operation circuit 4 includes a crystal resonator 1, oscillation capacitors 2 and 3, an oscillation circuit, and a frequency dividing circuit. , a logic circuit 5, an output buffer 6, and an output terminal 7. The P-channel MOS transistors and N-channel MOS transistors as active elements in each of the circuit blocks 4, 5, and 6 have unique threshold voltages determined by the configuration or regulation of manufacturing conditions, and have relatively low threshold voltages. Usually, they are arranged according to the voltage.
第２図は本発明の一実施例にかかる相補型集積
回路を示すもので、32768KHz水晶発振回路を有
する相補MOS型電子時計であり、水晶振動子８、
発振容量９，１０、発振回路、分周回路を含む高
周波動作回路１１、論理回路１２、出力バツフア
１３および出力端子１４からなる。発振回路を含
む高周波動作回路１１を高い閾値電圧のトランジ
スタからなるブロツク１５とし、論理回路１２お
よび出力バツフア１３を低い閾値電圧のトランジ
スタからなるブロツク１６としてまとめた構成を
とつている。 FIG. 2 shows a complementary integrated circuit according to an embodiment of the present invention, which is a complementary MOS electronic timepiece having a 32768 KHz crystal oscillator circuit, with a crystal oscillator 8,
It consists of a high frequency operation circuit 11 including oscillation capacitors 9 and 10, an oscillation circuit, and a frequency dividing circuit, a logic circuit 12, an output buffer 13, and an output terminal 14. The high frequency operation circuit 11 including the oscillation circuit is configured as a block 15 consisting of transistors with a high threshold voltage, and the logic circuit 12 and output buffer 13 are grouped together as a block 16 consisting of transistors with a low threshold voltage.
第３図は第１図および第２図の発振回路の閾値
電圧を変化した場合の、電源電圧VDDに対する周
波数変動Δf／fpの一例を示すもので、周波数変動
は電源電圧VDD＝1.5Vを基準にしている。 FIG. 3 shows an example of the frequency fluctuation Δf/f p with respect to the power supply voltage V DD when the threshold voltage of the oscillation circuit of FIGS. 1 and 2 is changed, and the frequency fluctuation is equal to the power supply voltage V DD =1.5. It is based on V.
ここで、fpはVDD＝1.5Vの時の周波数を表わし、
ΔfはVDD＝1.5V以外の時の周波数とfpとの周波数
差を表わしている。第３図のａ，ｂ，ｃは閾値電
圧がそれぞれａは0.2V、ｂは0.3V、ｃは0.7Vの
場合に対応する。第３図に示すように発振回路の
閾値電圧を高く（0.7V）することにより周波数
の電源電圧依存性は、電源電圧VDD＝1.5V付近で
広い範囲にわたり平坦となり、その特性を向上で
きることがわかる。 Here, f p represents the frequency when V DD = 1.5V,
Δf represents the frequency difference between the frequency when V DD =1.5V and f p . 3, a, b, and c correspond to the case where the threshold voltages are 0.2V for a, 0.3V for b, and 0.7V for c, respectively. As shown in Figure 3, by increasing the threshold voltage of the oscillation circuit (0.7V), the dependence of the frequency on the power supply voltage becomes flat over a wide range around the power supply voltage V DD = 1.5V, and its characteristics can be improved. Recognize.
また、発振回路を含む高周波動作回路を構成す
る能動素子を高い閾値電圧（0.7V）にすると、
低い閾値電圧（0.2〜0.3V）の時にくらべて消費
電流を1/5ほどに低減できる。 In addition, if the active elements that make up the high frequency operation circuit including the oscillation circuit are set to a high threshold voltage (0.7V),
Current consumption can be reduced to about 1/5 compared to when the threshold voltage is low (0.2 to 0.3V).
尚、第２図における実施例では論理回路および
出力バツフア１３を比較的低い閾値電圧のトラン
ジスタで構成したが、必要に応じてこれらを比較
的高い閾値電圧のトランジスタで構成しても良い
が、集積度を高くできない欠点を有する。 In the embodiment shown in FIG. 2, the logic circuit and the output buffer 13 are constructed of transistors with a relatively low threshold voltage, but if necessary, these may be constructed with transistors with a relatively high threshold voltage. It has the disadvantage that it cannot be raised to a high degree.
以上、本発明は簡単な構成により、電源電圧依
存性が少なく、かつ低消費電流化を図つた相補型
回路を実現出来るので工業的価値が高いものであ
る。 As described above, the present invention has high industrial value because it can realize a complementary circuit with a simple configuration, less dependence on power supply voltage, and low current consumption.
第１図は従来の32768KHz水晶発振回路図、第
２図は本発明の一実施例にかかる32768KHz水晶
発振回路図、第３図は閾値電圧に対する電源電圧
−周波数変動の関係を示す特性図である。
８……32768KHz水晶振動子、９，１０……発
振容量、１１……発振回路を含む高周波動作回
路、１２……論理回路、１３……出力バツフア、
１４……出力端子、１５……閾値電圧が高いトラ
ンジスタで構成された領域、１６……閾値電圧が
低いトランジスタで構成された領域。
Figure 1 is a conventional 32768KHz crystal oscillation circuit diagram, Figure 2 is a 32768KHz crystal oscillation circuit diagram according to an embodiment of the present invention, and Figure 3 is a characteristic diagram showing the relationship between power supply voltage and frequency fluctuation with respect to threshold voltage. . 8... 32768KHz crystal resonator, 9, 10... Oscillation capacitor, 11... High frequency operation circuit including oscillation circuit, 12... Logic circuit, 13... Output buffer,
14...Output terminal, 15...A region composed of transistors with a high threshold voltage, 16...A region composed of transistors with a low threshold voltage.
Claims (1)
部を構成するMOS型トランジスタの閾値電圧を、
他の回路部を構成するMOS型トランジスタの閾
値電圧に比較して、高くした相補型回路。1 The threshold voltage of the MOS transistor that constitutes the high frequency operation circuit section including the oscillation circuit and the frequency dividing circuit is
A complementary circuit whose threshold voltage is higher than that of the MOS transistors that make up other circuit sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57044967A JPS58161505A (en) | 1982-03-19 | 1982-03-19 | complementary circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57044967A JPS58161505A (en) | 1982-03-19 | 1982-03-19 | complementary circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58161505A JPS58161505A (en) | 1983-09-26 |
| JPH05882B2 true JPH05882B2 (en) | 1993-01-07 |
Family
ID=12706244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57044967A Granted JPS58161505A (en) | 1982-03-19 | 1982-03-19 | complementary circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161505A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54107773A (en) * | 1978-02-13 | 1979-08-23 | Nippon Precision Circuits | Electronic timepiece |
-
1982
- 1982-03-19 JP JP57044967A patent/JPS58161505A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58161505A (en) | 1983-09-26 |
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