JPH0588539B2 - - Google Patents

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a CVD device.

(Prior Art) In general, reaction chambers of semiconductor manufacturing equipment such as CVD equipment are often made of quartz, silicon, polysilicon, or the like. For example, in a CVD apparatus that performs batch CVD, as shown in FIG. 4, a wafer boat 3 holding a large number of wafers 2 is placed inside a cylindrical chamber 1 made of quartz, silicon, polysilicon, etc. placed,
CVD is performed.

In the chamber 1 of such semiconductor manufacturing equipment, for example, in a CVD equipment, various substances such as a CVD film are deposited, so cleaning must be performed at regular intervals.

Conventionally, this kind of cleaning of chamber 1 is
A method of performing chemical wet etching using chemicals such as hydrofluoric acid, or a cleaning chamber 4 made of quartz or the like as shown in FIG.
By inserting a cleaning electrode 5 made of a plurality of thin metal plates arranged inside the chamber 1 into the chamber 1 and applying high frequency power between the cleaning electrodes 5, the outer side of the cleaning chamber 4 and the inner wall of the chamber 1 are removed. Etching plasma is generated between the
This is done using a chemical dry etching method.

(Problems to be Solved by the Invention) However, in the method of performing chemical wet etching among the conventional chamber cleaning methods described above, the cylindrical chamber is removed from the semiconductor manufacturing equipment and processed in a draft chamber or the like. There are problems in that cleaning requires time, and that the chamber may be damaged during attachment and detachment from semiconductor manufacturing equipment, and waste liquid such as acid may be generated. In addition, in the chemical dry etching method, a cleaning electrode placed inside the cleaning chamber is used to prevent substances that adversely affect semiconductor devices, such as sodium ions generated from the cleaning electrode made of metal, from adhering to the chamber. Since etching plasma is generated outside the cleaning chamber, the etching plasma has a low density and requires a long time for cleaning.

The present invention has been made in response to such conventional circumstances, and it is possible to clean the chamber in a short time without requiring the chamber to be removed from the CVD device, thereby improving the operating rate.
The aim is to provide CVD equipment.

[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides a CVD apparatus that performs film formation by introducing gas into a chamber, which includes a cleaning electrode provided in the chamber, and a cleaning electrode provided in the chamber. and a high frequency power source that applies high frequency power to the cleaning electrode to turn a predetermined reaction gas atmosphere into plasma, and the cleaning electrode is made of silicon carbide.

(Function) In the CVD apparatus of the present invention, a cleaning electrode made of silicon carbide that does not generate sodium ions, etc. that have an adverse effect on semiconductor devices is disposed at least on one side of the inside and outside of the chamber, and the inside of the chamber is heated to a predetermined reaction rate. Since high frequency power is applied to the cleaning electrode as a gas atmosphere to generate etching plasma and cleaning is performed by dry etching, for example chemical dry etching, there is no need to attach or detach the chamber and the etching plasma density can be increased. , cleaning can be done in a short time.

(Example) Hereinafter, an example of the CVD apparatus of the present invention will be described with reference to the drawings.

Inside a cylindrical chamber 11 made of quartz, silicon carbide, polysilicon, etc., there are three pairs of thin plate-shaped cleaning electrodes 12a facing each other made of silicon carbide (SiC) and having a length of about half or more of the entire length of the chamber 11. , 12b, 12c are arranged. Then, in the quartz chamber 11, for example,
A reactive gas such as NF ₃ , CF ₄ , CHF ₃ , CCl ₄ , Cl ₂ is passed through the cleaning electrodes 12a, 12b, 12.
During the period c, high frequency power of 10 KHz, for example, high frequency power of about 13.56 MHz is applied to generate etching plasma, and the inside of the semiconductor manufacturing apparatus 11 is cleaned by chemical dry etching using the etching plasma.

In this embodiment method described above, the cleaning electrodes 12a, 12b, and 12c, which are made of silicon carbide and do not generate sodium ions that adversely affect semiconductor devices, are directly inserted into the quartz chamber 11 of the semiconductor manufacturing equipment. Since the cleaning is performed by chemical dry etching, there is no need to remove and install the quartz chamber 11.
Furthermore, the density of etching plasma can be increased, and cleaning can be performed in a short time.

Note that the cleaning electrodes 12a, 12b, 12c
By rotating the quartz chamber 11 about its axis, the etching plasma within the quartz chamber 11 can be made uniform. Further, these cleaning electrodes may be arranged around the quartz chamber 11 as shown in FIG. 2, or both inside and around the quartz chamber as shown in FIG. Of course, the shape, number, etc. may be changed in any way.

[Effects of the Invention] As described above, in the CVD apparatus of the present invention, there is no need to attach or detach the quartz chamber, and the density of the etching plasma can be increased.
Cleaning can be performed by chemical dry etching in a short time, and the operating rate of the CVD equipment can be improved. Moreover, the present invention
According to the CVD apparatus, since the cleaning electrode is made of silicon carbide, it is possible to clean the chamber with less generation of sodium ions that adversely affect the manufacture of semiconductor devices.

Furthermore, by providing at least one pair of cleaning electrodes, plasma is generated between these electrodes to clean the chamber, so that the plasma can be brought closer to a desired cleaning location within the chamber, allowing for more thorough cleaning.

Furthermore, by selecting the reactive gas from gases containing fluorine (F) or chlorine (Cl), it is possible to perform cleaning suitable for the film deposited within the chamber.

[Brief explanation of the drawing]

FIG. 1 is a front view of a quartz chamber for explaining one embodiment of the method of the present invention, FIGS. 2 and 3 are front views of a quartz chamber for explaining a modification of the method shown in FIG. FIG. 4 is a side view of the quartz chamber shown in FIGS. 1 to 3, and FIG. 5 is a front view of the quartz chamber for explaining the conventional method. 11...Quartz chamber, 12a, 12b, 12
c...Cleaning electrode.

Claims (1)

[Claims] 1. Film formation is performed by introducing gas into the chamber.
The CVD apparatus includes a cleaning electrode provided in the chamber, and a high frequency power supply that applies high frequency power to the cleaning electrode to turn a predetermined reaction gas atmosphere into plasma, and the cleaning electrode is made of silicon carbide. A CVD device comprising: 2. The electrode consists of at least one pair of electrodes,
2. The CVD apparatus according to claim 1, wherein high frequency power output from the high frequency power source is applied between these electrodes. 3. The reaction gas is a gas selected from fluorine (F)-containing gases such as NF ₃ , CF ₃ , CHF ₃ , etc., or chlorine (Cl)-containing gases such as CCl ₄ and Cl ₂ According to claim 1, which is characterized in that:
CVD equipment.