JPH0590634A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPH0590634A JPH0590634A JP24581891A JP24581891A JPH0590634A JP H0590634 A JPH0590634 A JP H0590634A JP 24581891 A JP24581891 A JP 24581891A JP 24581891 A JP24581891 A JP 24581891A JP H0590634 A JPH0590634 A JP H0590634A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- hole
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、発光ダイオ−ドとくに
長寿命発光ダイオ−ドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, and more particularly to a long life light emitting diode.
【０００２】[0002]
【従来の技術】従来、発光ダイオ−ドとしては、例えば
図３に示すものが知られている（特開平３−１７４７７
９号）。2. Description of the Related Art Conventionally, as a light emitting diode, for example, one shown in FIG. 3 is known (Japanese Patent Laid-Open No. 17477/1993).
No. 9).
【０００３】図中の１はｐ型ＧａＡｓ基板であり、メサ
部２を有している。前記基板１上には、ｐ型ＧａＡＩＡ
ｓクラッド層（第１クラッド層）３、ＧａＡＩＡｓ活性
層４及びｎ型ＧａＡＩＡｓウィンドウ層（第２クラッド
層）５が形成されている。前記第２クラッド層５上には
ｎ側電極６が形成され、前記基板１の裏面にはｐ側電極
７が形成されている。ここで、前記メサ部２は、平面的
にみると、ｎ側電極６の外周部より外側に位置してい
る。Reference numeral 1 in the figure denotes a p-type GaAs substrate having a mesa portion 2. The p-type GaAIA is formed on the substrate 1.
An s clad layer (first clad layer) 3, a GaAIAs active layer 4, and an n-type GaAIAs window layer (second clad layer) 5 are formed. An n-side electrode 6 is formed on the second cladding layer 5, and a p-side electrode 7 is formed on the back surface of the substrate 1. Here, the mesa portion 2 is located outside the outer peripheral portion of the n-side electrode 6 when seen in a plan view.
【０００４】こうした構造の発光ダイオ−ドにおいて、
正孔と電子は図３のＸ，Ｙに示すように流れ、活性層４
で面発光し、ｎ側電極６の外周部の第２クラッド層５か
ら矢印Ｚに示すように放出される。そして、発光部がｎ
側電極６の外周部より外側になるため、発生した光はｎ
側電極６に妨げられることなく放射され、効率が良く高
輝度となる。In a light emitting diode having such a structure,
Holes and electrons flow as shown by X and Y in FIG.
Surface emission is performed and is emitted from the second cladding layer 5 on the outer peripheral portion of the n-side electrode 6 as indicated by an arrow Z. And the light emitting part is n
Since it is outside the outer periphery of the side electrode 6, the generated light is n
It is radiated without being hindered by the side electrode 6, and the efficiency is high and the brightness is high.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
発光ダイオ−ドによれば、発光部がｎ側電極６を取り巻
くド−ナツ形状であるため、任意の形状と面積をもつ発
光部を得ることができないという問題があった。However, according to the conventional light emitting diode, since the light emitting portion has a donut shape surrounding the n-side electrode 6, a light emitting portion having an arbitrary shape and area can be obtained. There was a problem that I could not.
【０００６】本発明は上記事情に鑑みてなされたもの
で、基板表側に少なくも１つの穴を設け、かつ前記穴の
下方に位置する前記基板主面に凸部を設けることによ
り、任意の形状と面積の発光部を持ち、かつ高効率な発
光ダイオ−ドを提供することを目的とする。The present invention has been made in view of the above circumstances, and at least one hole is provided on the front side of the substrate, and a convex portion is provided on the main surface of the substrate located below the hole, whereby an arbitrary shape is obtained. It is an object of the present invention to provide a highly efficient light emitting diode having a light emitting portion having a large area.
【０００７】[0007]
【課題を解決するための手段】本発明は、基板上に活性
層を有するエピタキシャル層を成長させると共に表面に
電極を形成した発光ダイオ−ドにおいて、上記電極に少
なくとも１つの穴を設け、かつ前記穴の下方に位置する
前記基板主面に凸部を設けたことを特徴とする発光ダイ
オ−ドである。SUMMARY OF THE INVENTION The present invention is a light emitting diode in which an epitaxial layer having an active layer is grown on a substrate and an electrode is formed on the surface of the substrate, wherein the electrode is provided with at least one hole. The light emitting diode is characterized in that a convex portion is provided on the main surface of the substrate located below the hole.
【０００８】本発明において、前記電極の穴は前記凸部
と同じ径であってもよいが、好ましくは電極の穴は前記
凸部よりも大きくする。これにより、凸部で主として生
じた発光が、電極に妨げられずに穴から一層効率良く放
出される。In the present invention, the hole of the electrode may have the same diameter as the convex portion, but preferably the hole of the electrode is larger than the convex portion. Thereby, the light emission mainly generated in the convex portion is more efficiently emitted from the hole without being blocked by the electrode.
【０００９】また、本発明において、前記電極の穴は、
前記電極の中心からずれた位置にあることが好ましい。
これにより、電極へのワイヤボンディングを容易にする
ことができる。Further, in the present invention, the hole of the electrode is
It is preferably located at a position displaced from the center of the electrode.
Thereby, wire bonding to the electrode can be facilitated.
【００１０】[0010]
【作用】上記の構成において、ｎ側電極の円形の穴の真
下に対応する基板表面に凸部（メサ部）を設けられてい
るため、電子・正孔は図１の矢印にＸ，Ｙのように流
れ、メサ上部の活性層で発光する。そして、発光する光
はｎ側電極の穴を通して矢印Ｚのように放出される。In the above structure, since the convex portion (mesa portion) is provided on the substrate surface directly under the circular hole of the n-side electrode, electrons and holes are indicated by arrows X and Y in FIG. And emits light in the active layer above the mesa. Then, the emitted light is emitted as shown by an arrow Z through the hole of the n-side electrode.
【００１１】[0011]
【実施例】以下、本発明の一実施例に係る発光ダイオ−
ドについて図１及び図２を参照して説明する。ここで、
図１は発光ダイオ−ドの断面図、図２は図１の平面図を
示す。EXAMPLE A light emitting diode according to an example of the present invention will be described below.
The mode will be described with reference to FIGS. 1 and 2. here,
FIG. 1 is a sectional view of the light emitting diode, and FIG. 2 is a plan view of FIG.
【００１２】図中の１１はｐ型ＧａＡｓ基板であり、メ
サ部１２を有している。ここで、前記基板１１はキャリ
ア濃度２×1019cm-3，厚さ２７０μｍで、メサ部は直径
３０μｍ，高さ２０μｍの例えば円形である。前記基板
１１上には、厚さ４０μｍのｐ型ＧａＡＩＡｓ（混結比
0.65）クラッド層（第１クラッド層）１３、厚さ１μｍ
のアンド−プＧａＡＩＡｓ（混結比0.35）活性層１４及
び厚さ４０μｍのｎ型ＧａＡＩＡｓウィンドウ層（第２
クラッド層）１５が夫々形成されている。前記第２クラ
ッド層１５上には、前記メサ部１２の真上に位置する部
分に円形の穴１６を有するｎ側電極１７が形成されてい
る。なお、上記穴１６はメサ部１２より少し大きめにし
ておく。前記基板１１の裏面には、ｐ側電極１８が形成
されている。Reference numeral 11 in the figure denotes a p-type GaAs substrate having a mesa portion 12. Here, the substrate 11 has a carrier concentration of 2 × 10 19 cm −3 and a thickness of 270 μm, and the mesa portion has a diameter of 30 μm and a height of 20 μm, for example, a circle. On the substrate 11, 40 μm thick p-type GaAIAs (mixing ratio
0.65) Clad layer (first clad layer) 13, thickness 1 μm
And-type GaAIAs (mixing ratio 0.35) active layer 14 and n-type GaAIAs window layer 40 μm thick (second
Cladding layers) 15 are formed respectively. An n-side electrode 17 having a circular hole 16 is formed on the second cladding layer 15 in a portion located right above the mesa portion 12. The hole 16 is slightly larger than the mesa portion 12. A p-side electrode 18 is formed on the back surface of the substrate 11.
【００１３】こうした構成の発光ダイオ−ドにおいて、
電子・正孔は矢印Ｘ，Ｙのように流れ、メサ上部の活性
層１４で発光する。そして、その上部にｎ側電極１７が
ないため、発光する光１９はｎ側電極１７の穴１６を通
して効率的に放出される。次に、上記構成の発光ダイオ
−ドの製造方法について説明する。In the light emitting diode having such a structure,
Electrons and holes flow as indicated by arrows X and Y, and emit light in the active layer 14 above the mesa. Then, since there is no n-side electrode 17 on the upper portion, the emitted light 19 is efficiently emitted through the hole 16 of the n-side electrode 17. Next, a method of manufacturing the light emitting diode having the above structure will be described.
【００１４】まず、前記ＧａＡｓ基板１１上にメサ部１
２をホトリソグラフィにより形成する。メサ部の平面形
状は任意であるが、この場合は円形とした。次に、前記
基板１１上に、前記第１クラッド層１３、活性層１４及
び第２クラッド層１５を夫々エピタキシャル成長法によ
り形成した。つづいて、前記第２クラッド層１５上に、
前記メサ部１２の真上に位置する部分に穴１６を有する
ｎ側電極１７が形成した。更に、前記基板１１の裏面に
ｐ側電極１８を形成して発光ダイオ−ド２０を作製す
る。First, the mesa portion 1 is formed on the GaAs substrate 11.
2 is formed by photolithography. The planar shape of the mesa is arbitrary, but in this case, it was circular. Next, the first clad layer 13, the active layer 14, and the second clad layer 15 were formed on the substrate 11 by an epitaxial growth method. Then, on the second cladding layer 15,
An n-side electrode 17 having a hole 16 was formed in a portion located right above the mesa portion 12. Further, a p-side electrode 18 is formed on the back surface of the substrate 11 to produce a light emitting diode 20.
【００１５】しかして、上記実施例に係る発光ダイオ−
ドによれば、ｎ側電極１７の円形の穴１６の真下に対応
する基板１１表面に前記穴１６より若干が径が小さいメ
サ部１２を設けた構成になっているため、発光が主とし
てこのメサ部１２で生じる。従って、生じた光がｎ側電
極１６に妨げられることなく放出されるので、光の放出
効率が良く、しかも穴１６の形状により発光面の形状を
制御できるという効果を有する。Therefore, the light emitting diode according to the above embodiment is used.
According to C., the mesa portion 12 having a diameter slightly smaller than that of the hole 16 is provided on the surface of the substrate 11 directly below the circular hole 16 of the n-side electrode 17, so that light emission is mainly caused by this mesa. It occurs in part 12. Therefore, the generated light is emitted without being hindered by the n-side electrode 16, so that the light emission efficiency is good and the shape of the light emitting surface can be controlled by the shape of the hole 16.
【００１６】なお、上記実施例では、穴がｎ側電極の中
心に位置している場合について述べたが、これに限定さ
れない。例えば、図２に示すように、穴２１がｎ側電極
２２の中心Ｐからずれた位置に設けられていてもよい。
こうした構成にすれば、電極２２へのワイヤボンディン
グが容易にすることができる。In the above embodiment, the case where the hole is located at the center of the n-side electrode has been described, but the present invention is not limited to this. For example, as shown in FIG. 2, the hole 21 may be provided at a position displaced from the center P of the n-side electrode 22.
With such a configuration, wire bonding to the electrode 22 can be facilitated.
【００１７】[0017]
【発明の効果】以上詳述した如く本発明によれば、基板
表側に少なくも１つの穴を設け、かつ前記穴の下方に位
置する前記基板主面に凸部を設けることにより、任意の
形状と面積の発光部を持ち、かつ高効率な発光ダイオ−
ドを提供できる。As described in detail above, according to the present invention, at least one hole is provided on the front side of the substrate, and a convex portion is provided on the main surface of the substrate located below the hole, whereby an arbitrary shape is obtained. And a light emitting part with a large area, and a highly efficient light emitting diode.
Can be provided.
【図１】本発明の一実施例に係る発光ダイオ−ドの断面
図。FIG. 1 is a sectional view of a light emitting diode according to an embodiment of the present invention.
【図２】図１の平面図。FIG. 2 is a plan view of FIG.
【図３】従来の発光ダイオ−ドの断面図。FIG. 3 is a cross-sectional view of a conventional light emitting diode.
１１…ｐ型ＧａＡｓ基板、１２…メサ部、１３…第１ク
ラッド層、１４…アンド−プＧａＡＩＡｓ活性層、１５
…第２クラッド層、１６…穴、１７…ｎ側電極、１８…
ｐ側電極、２０…発光ダイオ−ド。11 ... P-type GaAs substrate, 12 ... Mesa portion, 13 ... First clad layer, 14 ... And-GaaIAs active layer, 15
... second cladding layer, 16 ... hole, 17 ... n-side electrode, 18 ...
p-side electrode, 20 ... Light emitting diode.
Claims (3)
層を成長させると共に表面に電極を形成した発光ダイオ
−ドにおいて、上記電極に少なくとも１つの穴を設け、
かつ前記穴の下方に位置する前記基板主面に凸部を設け
たことを特徴とする発光ダイオ−ド。1. A light-emitting diode having an active layer formed on a substrate and having an electrode formed on the surface thereof, wherein at least one hole is formed in the electrode.
A light emitting diode characterized in that a convex portion is provided on the main surface of the substrate located below the hole.
れた位置にある請求項１記載の発光ダイオ−ド。2. The light emitting diode according to claim 1, wherein the hole of the electrode is located off the center of the electrode.
求項１記載の発光ダイオ−ド。3. The light emitting diode according to claim 1, wherein the hole of the electrode is larger than the convex portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24581891A JPH0590634A (en) | 1991-09-25 | 1991-09-25 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24581891A JPH0590634A (en) | 1991-09-25 | 1991-09-25 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0590634A true JPH0590634A (en) | 1993-04-09 |
Family
ID=17139311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24581891A Withdrawn JPH0590634A (en) | 1991-09-25 | 1991-09-25 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0590634A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200514A (en) * | 2001-07-24 | 2009-09-03 | Nichia Corp | Semiconductor light-emitting device |
| US8299486B2 (en) | 2001-07-24 | 2012-10-30 | Nichia Corporation | Semiconductor light emitting device |
-
1991
- 1991-09-25 JP JP24581891A patent/JPH0590634A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009200514A (en) * | 2001-07-24 | 2009-09-03 | Nichia Corp | Semiconductor light-emitting device |
| US8299486B2 (en) | 2001-07-24 | 2012-10-30 | Nichia Corporation | Semiconductor light emitting device |
| US8344402B2 (en) | 2001-07-24 | 2013-01-01 | Nichia Corporation | Semiconductor light emitting device |
| US8344403B2 (en) | 2001-07-24 | 2013-01-01 | Nichia Corporation | Semiconductor light emitting device |
| US8796721B2 (en) | 2001-07-24 | 2014-08-05 | Nichia Corporation | Semiconductor light emitting device |
| US9368681B2 (en) | 2001-07-24 | 2016-06-14 | Nichia Corporation | Semiconductor light emitting device |
| US9865773B2 (en) | 2001-07-24 | 2018-01-09 | Nichia Corporation | Semiconductor light emitting device |
| US10396242B2 (en) | 2001-07-24 | 2019-08-27 | Nichia Corporation | Semiconductor light emitting device |
| US10593833B2 (en) | 2001-07-24 | 2020-03-17 | Nichia Corporation | Semiconductor light emitting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981203 |