JPH0593053U - Abnormality sensor with photoconductive semiconductor element for theft prevention - Google Patents
Abnormality sensor with photoconductive semiconductor element for theft preventionInfo
- Publication number
- JPH0593053U JPH0593053U JP8597190U JP8597190U JPH0593053U JP H0593053 U JPH0593053 U JP H0593053U JP 8597190 U JP8597190 U JP 8597190U JP 8597190 U JP8597190 U JP 8597190U JP H0593053 U JPH0593053 U JP H0593053U
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- semiconductor element
- photoconductive semiconductor
- cap
- cds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 230000002265 prevention Effects 0.000 title claims 2
- 230000005856 abnormality Effects 0.000 title description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 9
- 239000000057 synthetic resin Substances 0.000 claims description 9
- 230000002159 abnormal effect Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Burglar Alarm Systems (AREA)
Abstract
(57)【要約】 電子出願以前の出願であるので 要約・選択図及び出願人の識別番号は存在しない。(57) [Summary] Because it is an application before electronic filing There is no abstract / selection drawing and applicant identification number.
Description
【考案の詳細な説明】産業上の利用分野 本考案は高価な商品や美術品のような貴重な展 示物などの物品の盗難を未然に防止する盗難防止 警報システムに用いられる異常発生センサであっ て、対象物品に装着され、それとの空間的関係の 変化に応じて正常/異常を表わす信号を発生するた め、特に光導電性半導体素子を用いる異常発生セ ンサに関する。[Detailed description of the device] Industrial field of application The present invention is an anomaly sensor used for an anti-theft alarm system that prevents the theft of valuable items such as expensive goods and works of art. In particular, the present invention relates to an anomaly sensor that uses a photoconductive semiconductor element because it is attached to a target article and generates a signal indicating normality / abnormality according to a change in the spatial relationship with the article.
従来の技術 比較的高価な携帯用機器や美術品、宝物類など の物品の盗難防止システムでは、対象物品に装着 し、それからの離脱による空間的関係の変化を検 知することによって異常状態を表わす異常信号を 発生するためのセンサを必要とする。このセンサ には多種多様の型式があるが、協働する電子回路 が比較的簡単なことから、従来最も多用されてい るのはスイッチ型センサで、例えば、マイクロス イッチを用いる実公昭48−35514号、磁気反応ス イッチによる実開昭53−55677号、コネクタ利用 の実開昭54−1388号、磁界応動リードスイッチに よる実開昭54−8388号、フェライトゴム磁石を用 いる磁気センサによる実公昭62−17916号などが ある。これらのスイッチ型センサには動作モード から常閉型と常開型に大別されるが、いずれにせ よ、導通または非導通により正常状態及び異常状 態のいずれであるかが判定される。また、これら のセンサにはそれぞれ一長一短があるので、現場 の状況や対象物品に応じてその適切なものを採択 すべきであることはいうまでもない。発明の解決すべき問題点とその解決手段の特徴 しかし、監視すべき物品の多様化を考慮する と、センサの小型化と取着けの簡易化に加え、導 通/非導通による以外に、その中間領域における抵 抗値変化に応じて作動する常開スイッチ型センサ も有用であり、それによりシステムの応用が一段 と拡張されると期待される。 2. Description of the Related Art In the antitheft system for relatively expensive portable devices, works of art, treasures, etc., an abnormal state is indicated by detecting a change in the spatial relationship when the device is attached to the target item and then detached from it. It requires a sensor to generate an abnormal signal. There are various types of this sensor, but since the electronic circuits that cooperate with each other are relatively simple, the switch type sensor has been most frequently used in the past, for example, a micro switch using a micro switch. No. 53-55677 using a magnetic reaction switch, No. 54-1388 using a connector, No. 54-8388 using a magnetic field responsive reed switch, and a magnetic sensor using a ferrite rubber magnet. For example, Kosho 62-17916 is available. These switch type sensors are roughly classified into a normally closed type and a normally open type depending on the operation mode. In any case, it is determined whether they are in a normal state or an abnormal state by conducting or non-conducting. It goes without saying that each of these sensors has merits and demerits, so that the appropriate one should be selected according to the situation at the site and the target article. Features of solving problems to be the invention and their solutions, however, and take into account a variety of to be monitored article, in addition to the simplification of put preparative and miniaturization of the sensors, except by conduction / non-conduction, the A normally open switch type sensor that operates in response to changes in the resistance value in the middle region is also useful, and it is expected that this will further expand the application of the system.
かくして、本考案は上述の期待に応える斬新な 盗難防止用センサに指向して、光導電性半導体素 子を利用し、小型で、構造簡単かつ物品への装着 が簡易な常開スイッチ型異常発生センサを提供す ることを目的とする。 Thus, the present invention is directed to a novel anti-theft sensor that meets the above-mentioned expectations, uses a photoconductive semiconductor element, and is a small-sized, simple structure and easy-to-install normally-open switch type abnormality occurrence. The purpose is to provide a sensor.
叙上の目的達成のための技術手段として、本考 案は次の構成上の特徴を有する。 As a technical means for achieving the above purpose, this proposal has the following structural features.
(イ) コードを挿通し協働の電気回路への接続の ための長孔を有する合成樹脂製の基部。 (B) A base made of synthetic resin having a long hole for inserting a cord and connecting to an electric circuit for cooperation.
(ロ) 該基部と一体化された不透明合成樹脂製の キャップ。 (B) An opaque synthetic resin cap integrated with the base.
(ハ) 該キャップの内側底面に形成された凹部に 嵌設した光導電半導体素子。 (C) A photoconductive semiconductor element fitted in a recess formed on the inner bottom surface of the cap.
(ニ) 必要に応じて設けられる、上記光導電性半導体素子に並列接続された高
抵抗。(D) A high resistance connected in parallel with the photoconductive semiconductor element, which is provided as necessary.
実施例 次に図面を参照して、本考案の異常発生センサ の一実施例を説明する。この異常発生センサの側 断面図及び底面図をそれぞれ示す第１図及び第２図 において、１は合成樹脂製の基部であり、２は合成 樹脂製のキャップで内側底面に凹部が形成してあ る。ここでは単一体に形成したものが示されてい るが、別々に形成してから接合により一体化して もよい。合成樹脂材料としては種々のものが用い られるが、塩化ビニールが好適である。少なくと もキャップは不透明でなければならないから、そ のためには、例えば予め未成形の塩化ビニール材 料に適宜の顔料、例えばカーボルブラックまたは 酸化マグネシウムの適量を混入しておいてから、 型押し成形する。カーボンブラックを混入した場 合は黒色不透明になり、酸化マグネシウムを混入 した場合は白色不透明になる。また、その他の顔 料の使用により所望の着色したキャップが得られ るので、対象物品の色彩、特にセンサ装着部分の それを考慮に入れて、数種類の着色不透明の キャップを用意しておくことも考えられる。３はセ ラミック等の適当な絶縁材料のサブストレートの 一面上にそれ自体公知のプロセスにより形成され た光導電性半導体素子、例えばCdSの薄膜であ る。すなわち、セラミック基板上に所定の不純物 を添加したCdSの原料粉末を塗布し、不活性ガス 雰囲気中で約600℃で焼結することにより、光導 電性のCdS薄膜を得る。4a及び4bはCdS薄膜を はさんで対向する電極で、これはCdS薄膜を作っ てから、真空蒸着法などで形成される。対向電極 の形状は周知のように高い感度を得るためコム状 にすることが望ましい。かくして得られたもの は、実際は光入射のための透明な窓を有する金属 容器に封入したり、あるいは合成樹脂中に埋込ま れるが、図ではこのような細部の構造は省略して ある。７はリード線で、半田付５によりCdS薄膜に 接続される。なお、前述の金属容器に封入したも のの場合には、そのステムに設けた黒色絶縁ガラ スによってリード線を支持することもある。６はセ ンサを協働する電子回路の入力端子に接続する ケーブルを示す。８は協働する電子回路への適応の ため、必要に応じてCdSに並列に接続される高抵抗 で、図ではキャップの内側底面に設けられている が、それは具体的な配置構造でなく単にかかる並 列抵抗の存在を概念的に示すにすぎない。すなわ ち抵抗８は本考案に必須のものでないのみならず、 その型式ならびに設置場所は随意に選択できる。Embodiment Next, an embodiment of the abnormality occurrence sensor of the present invention will be described with reference to the drawings. In FIGS. 1 and 2 showing a side sectional view and a bottom view of the abnormality occurrence sensor, respectively, 1 is a synthetic resin base, and 2 is a synthetic resin cap having a recess formed on the inner bottom surface. It Although shown as a single body here, they may be formed separately and then integrated by joining. Although various materials are used as the synthetic resin material, vinyl chloride is preferable. At least the cap must be opaque, for example by premixing an unmolded vinyl chloride material with an appropriate amount of a suitable pigment, such as carbon black or magnesium oxide, Press molding. When carbon black is mixed, it becomes black and opaque, and when magnesium oxide is mixed, it becomes white and opaque. In addition, since the desired colored cap can be obtained by using other pigments, it is possible to prepare several types of colored and opaque caps taking into consideration the color of the target article, especially that of the sensor mounting part. Conceivable. Reference numeral 3 is a photoconductive semiconductor element, for example, a thin film of CdS, which is formed on one surface of a substrate made of a suitable insulating material such as ceramic by a process known per se. That is, a CdS raw material powder to which a predetermined impurity has been added is applied onto a ceramic substrate and sintered at about 600 ° C. in an inert gas atmosphere to obtain a photovoltaic CdS thin film. Electrodes 4a and 4b face each other across the CdS thin film, which is formed by vacuum deposition after forming the CdS thin film. As is well known, it is desirable that the shape of the counter electrode be comb-shaped in order to obtain high sensitivity. The product thus obtained is actually enclosed in a metal container having a transparent window for light incidence or embedded in a synthetic resin, but such a detailed structure is omitted in the figure. 7 is a lead wire, which is connected to the CdS thin film by soldering 5. In the case where the lead wire is enclosed in the metal container, the lead wire may be supported by the black insulating glass provided on the stem. 6 indicates a cable connecting the sensor to the input terminal of the cooperating electronic circuit. 8 is a high resistance that is connected in parallel to CdS as needed for adaptation to cooperating electronic circuits, and it is provided on the inner bottom surface of the cap in the figure, but it is not a specific arrangement structure but simply It merely conceptually indicates the existence of such parallel resistance. That is, the resistor 8 is not indispensable to the present invention, and its type and installation place can be arbitrarily selected.
例えば薄膜抵抗を採択して、それをセラミックの サブストレートの背面に形成してもよい。あるいは、カーボン皮膜などの高抵抗
器を 用い、そのリード線をそれぞれプリント基板に 取付けたCdSのリード線に半田付して並列 抵抗を形成することもできる。また、 抵抗８の抵抗値は、実施の態様に応じて適当にされ る。例えば、本考案と同日出願に係る特許出願 「盗難防止システムの状態判定スレーブ回路」に 開示した実施例では、220ＫΩの並列抵抗となって いる。For example, a thin film resistor may be adopted and formed on the back surface of the ceramic substrate. Alternatively, a parallel resistor can be formed by using a high resistance device such as a carbon film and soldering the lead wires to the CdS lead wires attached to the printed circuit board. Further, the resistance value of the resistor 8 is made appropriate according to the embodiment. For example, in the embodiment disclosed in the patent application “Status determination slave circuit of anti-theft system” filed on the same day as the present invention, a parallel resistance of 220 KΩ is provided.
ところで、CdS等の光導電性半導体素子は、光入射 のない暗時には絶縁に近い程に抵抗値が大きい が、光入射のある明時には激減して小さな抵抗値 になる。参考のため、浜松フオトニクス（株）の P1445を例に採ると、その特定の概要は下の表のと おりである。 By the way, a photoconductive semiconductor element such as CdS has a large resistance value as it approaches insulation in the dark when no light is incident, but decreases drastically to a small resistance value when light is incident. For reference, taking the P1445 from Hamamatsu Photonics K.K. as an example, the specific outline is given in the table below.
したがって、第１図、第２図のような構造を有す るセンサをそのキャップ１の縁部に両面接着テープ をほどこすことにより対象物品に装着し、その接 続コードを協働する電子回路の入力端子に接続し ておくと、キャップは不透明であるため、内側底 面に形成した凹部に嵌設されたCdSへの光入射が ないから、CdSは暗時の高い抵抗値を示す。しか し、万一誰かによりセンサが対象物品から離脱す ると、CdS3は環境光に露出されて光入射を受ける から、その照度に応じた低い抵抗値になる。この ように光導電性半導体を用いたセンサは、それと 対象物品との空間的関係の変化に応じて、抵抗値 が大きく変化する。すなわち、空間的関係が正常 状態は高抵抗であったものが、異常状態には小抵 抗になる。それ故、このセンサの抵抗値の変化は 接続コードを通して協働の電子回路の入力端子に 現われるから、電子回路はセンサの抵抗値が特定 の値より大きいか小さいかによって、正常/異常状 態のいずれであるかを判定し、異常状態と判定し た時はその出力端子に異常信号を生じてモニタの ブザー、発光ダイオード等の表示装置を付勢する 一方、システムによってはさらに上位のモニタ、 例えばマスタモニタにも異常信号を送る。 Therefore, the sensor having the structure as shown in FIGS. 1 and 2 is attached to the target article by applying the double-sided adhesive tape to the edge portion of the cap 1, and the electronic circuit cooperating with the connection code. When connected to the input terminal of CdS, since the cap is opaque and no light is incident on CdS fitted in the recess formed on the inner bottom surface, CdS has a high resistance value in the dark. However, in the unlikely event that someone removes the sensor from the target article, CdS3 is exposed to ambient light and receives light, which results in a low resistance value according to the illuminance. As described above, in the sensor using the photoconductive semiconductor, the resistance value greatly changes according to the change in the spatial relationship between the photoconductive semiconductor and the target article. In other words, what has a high resistance in the normal state of the spatial relationship becomes a small resistance to the abnormal state. Therefore, since the change in the resistance value of this sensor appears at the input terminal of the cooperating electronic circuit through the connection cord, the electronic circuit determines whether the sensor resistance value is normal or abnormal depending on whether the sensor resistance value is larger or smaller than a specific value. If it is determined that it is in an abnormal state, an abnormal signal is generated at its output terminal to activate the monitor buzzer, display device such as light emitting diode, etc. An error signal is also sent to the master monitor.
このように、CdS等の光導電性半導体によるセ ンサは、いわば常開スイッチ型センサとして機能 する。 Thus, a sensor made of photoconductive semiconductor such as CdS functions as a normally open switch type sensor.
なお、不透明合成樹脂のキャップ３は、対象物品 の形状によくなじみ、装着した際に光導電性半導 体に光入射がないようにする必要があるので、そ の縁部が平坦であることが望ましく、またキャッ プ自体も柔軟性を有する方がよい。このような キャップの場合には、吸盤として作用させること により対象物品へ装着できるので、接着剤や両面 接着テープのごとく、対象物品に汚れを残す恐れ がない、という利点がある。 Note that the opaque synthetic resin cap 3 has a flat edge because it fits well into the shape of the target article and it is necessary to prevent light from entering the photoconductive semiconductor when mounted. However, it is preferable that the cap itself has flexibility. In the case of such a cap, since it can be attached to the target article by acting as a suction cup, there is an advantage that there is no fear of leaving stains on the target article like an adhesive or a double-sided adhesive tape.
考案の効果 以上に説明したとおりであるから、本考案の光 導電性半導体素子による異常発生センサは、構造 簡単でかつ小型で、装着が簡易であり、所望によ り適宜の抵抗値を有する並列抵抗を接続すること によって、容易に実施態様に適合した動作モード を有する常開スイッチ型スイッチとして機能する ことができ、盗難防止システムの有用性と応用範 囲の拡張に資する、という特有の効果を奏する。 Effects of the Invention As described above, the abnormality occurrence sensor using the photoconductive semiconductor element of the present invention has a simple structure, is small in size, is easy to install, and has an appropriate resistance value in parallel. By connecting a resistor, it is possible to easily function as a normally-open switch type switch having an operation mode suitable for the embodiment, which has a unique effect of contributing to the usefulness and expansion of the application range of the antitheft system. Play.
第１図は本考案に係る異常発生センサの一実施例 の側断面図、第２図は同じく底面図である。 図において、１…基部、２…キャップ、 ３…CdS薄膜、4a,4b…電極、５…半田付、 ６…コード、７…リード線、８…抵抗。 FIG. 1 is a side sectional view of an embodiment of the abnormality sensor according to the present invention, and FIG. 2 is a bottom view of the same. In the figure, 1 ... Base, 2 ... Cap, 3 ... CdS thin film, 4a, 4b ... Electrode, 5 ... Soldering, 6 ... Cord, 7 ... Lead wire, 8 ... Resistor.
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─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平３．１１．６ 図面の簡単な説明を次のように補正する。 明細書８頁１１行と１２行の間に行を改めて次を挿入
する。 『抵抗器８の役割は故意又は事故によってコードの断線
又は切断が起ったことをセンサが正常状態でも検知する
ために有る。』[Submission date] Flat 3.11.6 Amend the simple explanation of the drawings as follows. The following line is newly inserted between lines 11 and 12 on page 8 of the specification. "The role of the resistor 8 is to detect the disconnection or disconnection of the cord intentionally or accidentally even when the sensor is in a normal state. ]
Claims (1)
する 合成樹脂製の基部(1)と、該基部と一体化され た、不透明な合成樹脂製のキャップ(2)と、該 キャップの内側底面に形成された凹部に嵌設した 光導電性半導体素子(3)とを含んで成る盗難防止 用の光導電性半導体素子による異常発生センサ。1. A synthetic resin base (1) having a long hole for inserting and connecting a cord, an opaque synthetic resin cap (2) integrated with the base, and a cap of the cap. An anomaly sensor using a photoconductive semiconductor element for theft prevention, comprising a photoconductive semiconductor element (3) fitted in a recess formed on the inner bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8597190U JPH0593053U (en) | 1990-08-14 | 1990-08-14 | Abnormality sensor with photoconductive semiconductor element for theft prevention |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8597190U JPH0593053U (en) | 1990-08-14 | 1990-08-14 | Abnormality sensor with photoconductive semiconductor element for theft prevention |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0593053U true JPH0593053U (en) | 1993-12-17 |
Family
ID=13873614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8597190U Pending JPH0593053U (en) | 1990-08-14 | 1990-08-14 | Abnormality sensor with photoconductive semiconductor element for theft prevention |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0593053U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07320169A (en) * | 1994-05-24 | 1995-12-08 | Toshio Inoue | Theftproof tag |
-
1990
- 1990-08-14 JP JP8597190U patent/JPH0593053U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07320169A (en) * | 1994-05-24 | 1995-12-08 | Toshio Inoue | Theftproof tag |
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