JPH0593268A - Sputtering cathode and sputtering apparatus using the same - Google Patents

Abstract

(57) [Abstract] [Purpose] A thin film with uniform film characteristics is formed on a large area by a planar magnetron type sputtering device. [Structure] A structure in which the opening of the earth shield plate 3 can be freely and locally adjusted by the cathode of a planar magnetron type sputtering device. [Effect] Since the size of the substrate can be increased, the cost can be reduced, and the film thickness can be made uniform to improve the yield.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a sputtering apparatus used in various thin film forming apparatuses.

[0002]

2. Description of the Related Art As shown in FIG. 2, a conventional sputtering apparatus incorporates a sputtering cathode having a ground shield plate having an opening having the same shape as the target. Devices of this type are generally well known,
As a related article, there is JP-A-61-53427.

[0003]

When a film is formed by the conventional magnetron type sputtering device, the film thickness cannot be corrected. As a means for improving this, there is an example in which the magnetic field is moved and corrected, but the structure of the device becomes complicated and the cost becomes high. There is also a method in which a plate called a film thickness correction plate is installed between the cathode and the substrate to locally block the particles incident on the substrate and adjust the particle, but foreign matter from this correction plate causes defects. Moreover, in the case of RF sputtering, the film quality also changes, making it difficult to adjust the distribution.

An object of the present invention is to provide a sputtering apparatus capable of forming a film having a more uniform distribution characteristic.

[0005]

In order to achieve the above object, the consumption state of the target material was examined. FIG. 4 is a cross-sectional view of the target showing the consumption state of the target when a part of the earth shield plate is projected above the target of the planar magnetron system. In the case of this earth shield plate structure, the erosion is concentrated in the region confined in the magnetic field, and the other parts are in a depleted state in which the speed of erosion is extremely slow. If the earth shield plate is on the side of the target, it is in a worn state as shown in Fig. 5,
Erosion also progresses outside the ring-shaped erosion due to the magnetic field, and a distribution in which the film thickness increases outside is obtained. Therefore, a desired film thickness distribution is obtained by utilizing this and combining the shapes to determine the shape of the earth shield plate.

[0006]

By providing the earth shield plate only in the central portion of the target, the amount of spatter in the central portion is reduced and a more uniform film thickness is realized. As a result, the film thickness distribution can be controlled without modifying the equipment such as the sputtering cathode. Further, since the earth shield plate can be repaired inexpensively, it can be easily repaired and maintained.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.

(1) An earth shield plate used for a round cathode of a static opposed type RF planar magnetron sputtering apparatus was manufactured into a shape as shown in FIG. Further, the portion 1 has a removable structure so that the size can be changed. This earth shield plate was attached to the cathode and sputtering was performed. As a result, it was confirmed that the glow discharge was stable and could be sputtered. Therefore, when a film was formed on an elongated substrate and the film thickness distribution was examined, it was found that the film thickness was almost uniform within the substrate. It was also confirmed that the film thickness can be freely changed by changing the size of the portion 1. The sheet resistance distribution was also measured and the variation was examined. As a result, a good value within ± 5% was obtained within the substrate, and the result was that the film quality was almost uniform.

(2) Turret type substrate holder type RF
As for the rectangular cathode of the planar magnetron sputtering apparatus, an earth shield plate was manufactured as shown in FIG.
This earth shield plate was attached to the cathode and sputtering was performed. As a result, it was confirmed that the glow discharge was stable and could be sputtered, and when the film was formed and the film thickness distribution was examined, the film thickness was found to be almost uniform within the substrate. Further, by adjusting the part 1 of the opening of the earth shield plate, the influence of the film thickness distribution peculiar to the device could be controlled by this.

(3) The cathode of a carousel type RF planar magnetron sputtering apparatus having a substrate holder having a rotation axis parallel to the cathode and the substrate holder rotating during film formation is also as shown in FIG. Then, I made an earth shield plate. When this earth shield plate was attached to the cathode and film formation was carried out to examine the film thickness distribution, the film thickness was found to be almost uniform within the substrate.

[0011]

According to the present invention, a film having a more uniform film thickness can be formed. As a result, a film having uniform characteristics can be formed, so that the substrate can be made large and cost can be reduced. Further, the film can be formed with a uniform film thickness, and the etching can be made uniform.

[Brief description of drawings]

FIG. 1 is an explanatory view of a ground shield plate according to a first embodiment of the present invention,

FIG. 2 is an explanatory view of a ground shield plate according to a second embodiment of the present invention,

FIG. 3 is an explanatory view of an earth shield plate according to a third embodiment of the present invention,

FIG. 4 is a cross-sectional view of the target showing the consumption state of the target.

FIG. 5 is a cross-sectional view of a target showing the consumption state of the target.

[Explanation of symbols]

1 ... Projection of earth shield plate, 2 ... Target, 3
… Earth shield plate.

Claims (4)

[Claims] 1. In an earth shield plate which is arranged close to a target surface in a magnetron type cathode assembly including a magnet of a sputtering apparatus for forming a thin film, the amount of protrusion of the earth shield plate onto the target is determined. A cathode for planar magnetron sputtering characterized by being changed according to the location. 2. The sputtering cathode according to claim 1, wherein the protruding amount of the earth shield plate is in a range from a position 10 mm outside the single target portion to an inner edge of the outer peripheral magnet on the rear surface of the target. Sputtering cathode. 3. A sputtering apparatus comprising the sputtering cathode according to claim 1.2 combined with an RF power source and a matching circuit. 4. A substrate moving film forming type sputtering apparatus to which the above-mentioned claim 1.2.3 is applied.