JPH0593300A - Electrolytic etching method - Google Patents
Electrolytic etching methodInfo
- Publication number
- JPH0593300A JPH0593300A JP27628391A JP27628391A JPH0593300A JP H0593300 A JPH0593300 A JP H0593300A JP 27628391 A JP27628391 A JP 27628391A JP 27628391 A JP27628391 A JP 27628391A JP H0593300 A JPH0593300 A JP H0593300A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- etching
- electrode
- electrolytic
- tip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000866 electrolytic etching Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims description 37
- 239000007787 solid Substances 0.000 claims abstract description 13
- 239000008151 electrolyte solution Substances 0.000 claims description 21
- 239000000523 sample Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 abstract description 61
- 238000009826 distribution Methods 0.000 abstract description 10
- 239000003792 electrolyte Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 238000012545 processing Methods 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 238000002161 passivation Methods 0.000 description 13
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- -1 halogen ions Chemical class 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 235000010344 sodium nitrate Nutrition 0.000 description 6
- 239000004317 sodium nitrate Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000840 electrochemical analysis Methods 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000003115 supporting electrolyte Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229940075397 calomel Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Landscapes
- Micromachines (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電気化学的微細加工法
としての電解エッチング方法に関し、特に開口先端を有
するキャピラリー中に少なくともその先端が挿入された
プローブ状電極を対極として使用する電解エッチング方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrolytic etching method as an electrochemical microfabrication method, and more particularly to an electrolytic etching method using as a counter electrode a probe-like electrode having at least its tip inserted in a capillary having an open tip. Regarding
【0002】[0002]
【従来の技術】近年、電子デバイス製造技術に端を発し
た各種のシリコン微細加工法が開発され、各種のマイク
ロアクチュエーターやセンサーの微細化が試みられるよ
うになった。このような微細加工技術としては、新しい
精密加工法としてレーザー加工法や放電加工法等の開発
も活発に行われているものの、研磨・切削手段としては
主としてフォトリソグラフィーと湿式の異方性エッチン
グの組み合わせによるものが多い。2. Description of the Related Art In recent years, various silicon microfabrication methods have been developed which originated in electronic device manufacturing technology, and various microactuators and sensors have been tried to be miniaturized. As for such fine processing technology, although laser processing and electric discharge processing are being actively developed as new precision processing methods, photolithography and wet anisotropic etching are mainly used as polishing / cutting means. There are many combinations.
【0003】電気化学の分野においては、従来から精密
表面加工技術として電気メッキや電解エッチングが広く
利用されている。例えば、かかる加工技術を利用して得
られる製品として、電気剃刀の網刃やCDのスタンパー
等を挙げることができる。In the field of electrochemistry, electroplating and electrolytic etching have been widely used as precision surface processing techniques. For example, as a product obtained by using such a processing technique, a net blade of an electric razor, a stamper of a CD, and the like can be given.
【0004】これらの電気化学的手法の長所として、同
時加工により多量の製品を一時に製造することができる
といったエッチング技術に共通な利点以外にも、使用す
る溶液の種類を広く選べること、反応の制御が容易で且
つ穏やかな条件で反応を起こさせることができる等の利
点を挙げることができる。The advantages of these electrochemical techniques include not only the common advantages of etching techniques such as the ability to simultaneously produce a large amount of products by simultaneous processing but also the wide choice of the type of solution used and the reaction. There are advantages such as easy control and allowing the reaction to occur under mild conditions.
【0005】一方、これらの電気化学的手法の短所とし
ては、加工の為の特殊な電極が必要なこと、加工対象が
導電性の表面を持たねばならないこと、更には湿式法の
一般的欠点と見られる加工精度上の問題点等が挙げられ
る。このような点から、従来の電気化学的手法は、比較
的大規模な表面に対しての処理に主に用いられてきたの
であり、必ずしも局所的な微小表面の加工に対して適切
な電気化学技術が確立されている訳では無い。On the other hand, the disadvantages of these electrochemical methods are that a special electrode for processing is required, that the object to be processed must have a conductive surface, and that there are general drawbacks of the wet method. There are some problems in processing accuracy that can be seen. From this point of view, the conventional electrochemical method has been mainly used for the treatment of a relatively large surface, and it is not always suitable for the treatment of a local minute surface. The technology is not established.
【0006】微小電極を用いて電気化学的加工を行う場
合の問題点は、別の視点から見ると、最近、電気化学分
析にしばしば用いられる微小電極の持つ利点と一致す
る。From a different point of view, the problems associated with performing electrochemical processing using microelectrodes are consistent with the advantages of microelectrodes often used in electrochemical analysis these days.
【0007】即ち、電極面積の減少と共に電極周辺部の
電流密度の異常、いわゆるエッジ効果が大きく効くよう
になり、電極面近傍の電流分布は放射状の広がりを持つ
ようになる。That is, as the area of the electrode is reduced, the abnormal current density in the peripheral area of the electrode, that is, the so-called edge effect becomes more effective, and the current distribution near the electrode surface has a radial spread.
【0008】このことは、電気化学分析の立場から言え
ば、液抵抗の影響を小さくし、単位面積当りの電流値を
大きくする等の有利な条件を創り出す。From the standpoint of electrochemical analysis, this creates advantageous conditions such as reducing the influence of liquid resistance and increasing the current value per unit area.
【0009】しかしながら、表面加工の面から言うと、
この現象は電流分布の大きな不均一を招くと同時に加工
領域を大きく広げてしまい、加工精度と効率の大幅な低
下を招くこととなる。極端な場合には、表面の加工は全
く不可能となるのである。However, in terms of surface processing,
This phenomenon causes a large non-uniformity of the current distribution, and at the same time, greatly expands the processing region, resulting in a significant reduction in processing accuracy and efficiency. In extreme cases, surface processing is completely impossible.
【0010】[0010]
【発明が解決しようとする問題点】電流分布の改善は、
作動極である被加工面と対極である微小電極との間を小
さくすることで達成できる。従って、電極を微小にした
場合、微小化に見合った加工を施すには、その分だけ電
極の先端を加工面に近付けなければならない。Problems to be Solved by the Invention The improvement of the current distribution is
This can be achieved by reducing the distance between the work surface that is the working electrode and the microelectrode that is the counter electrode. Therefore, when the electrode is made minute, the tip of the electrode must be brought closer to the processed surface in order to perform the processing corresponding to the miniaturization.
【0011】STM(走査トンネル顕微鏡)を用いた実
験のように極めて僅かな数の原子を移動させるような場
合を除き、或る程度の量の加工を行うとなると、加工に
伴う溶解析出反応によって微小電極の表面形状変化が時
々刻々と起こる。また、同時に微小電極での反応生成物
による加工面への汚染等も考えられるから、一般的に言
って、微小電極を用いる加工は極めて解決困難な問題を
抱えていると言えよう。Except in the case where an extremely small number of atoms are moved as in an experiment using an STM (scanning tunneling microscope), when a certain amount of processing is performed, a dissolution precipitation reaction accompanying the processing causes The surface shape of the microelectrode changes every moment. Further, at the same time, it is possible that the processed surface is contaminated by the reaction products of the microelectrodes, so generally speaking, it can be said that the processing using the microelectrodes has an extremely difficult problem to solve.
【0012】以上のような困難な問題の解決方法とし
て、本発明者等は、キャピラリー中にプローブ状の微小
電極を挿入し、これを対極として行うエッチング法(以
下、「キャピラリーエッチング法」と略称することもあ
る)を試みた。即ち、作動極である被エッチング素材と
しては銅を用い、これに対極としての微小開口先端を有
するガラスキャピラリー電極(ガラスキャピラリー中に
対極としての白金線を挿入したもの)を密着させて、閉
鎖された銅電極部分を創り出し、電解液(支持電解質溶
液)として硝酸ソーダ溶液を用い、電解エッチングを行
うものである。As a method for solving the above-mentioned difficult problems, the present inventors have introduced an etching method (hereinafter, abbreviated as "capillary etching method") in which a probe-shaped microelectrode is inserted into a capillary and this is used as a counter electrode. There is also something to do). That is, copper is used as the material to be etched, which is the working electrode, and a glass capillary electrode having a fine opening tip as a counter electrode (a platinum wire in which a counter electrode is inserted into the glass capillary) is brought into close contact with it and closed. A copper electrode part is created and electrolytic etching is performed using a sodium nitrate solution as an electrolytic solution (supporting electrolyte solution).
【0013】この電解エッチング法では、キャピラリー
内を電解電流が流れることにより方向性の揃った均一な
電流が得られ、そのためキャピラリーの内径と同程度の
微小孔を銅面に形成させることができる。一般的に言っ
て、多結晶性の銅版等への等方性電解エッチングでは、
エッジ効果としての周辺部のオーバーエッチング(サイ
ドエッチング)が大きな問題点となっている。この欠点
を克服するにはエッジ面近傍の電流分布の均一化が不可
欠であり、かかる観点からキャピラリーにより電流分布
の不均一化を防ぐことにより、上記のような結果を得る
ことができるのである。また、この電解エッチング法で
は、電解反応生成物による電極の汚染を防ぐこともでき
ることが明らかとなった。In this electrolytic etching method, an electrolytic current flows in the capillaries to obtain a uniform electric current with uniform directionality. Therefore, minute holes having the same size as the inner diameter of the capillaries can be formed in the copper surface. Generally speaking, in isotropic electrolytic etching on a polycrystalline copper plate, etc.,
Peripheral over-etching (side etching) as an edge effect has become a serious problem. In order to overcome this drawback, it is indispensable to make the current distribution near the edge surface uniform. From this point of view, it is possible to obtain the above results by preventing the current distribution from becoming nonuniform by the capillary. Further, it has been clarified that this electrolytic etching method can prevent the contamination of the electrode by the electrolytic reaction product.
【0014】しかし、上記のエッチング法では、電解エ
ッチングの進行に伴い、キャピラリー内に硝酸の銅塩が
生成し、やがてこれが析出してキャピラリーの先端が詰
まってくるという不都合が生じると共に、該銅塩の過飽
和状態になるとエッチング反応速度が遅くなるという問
題点が有る。このため、この電解エッチング法は現実的
な工業的微細加工技術として発展性を有するものでは無
い。However, in the above-mentioned etching method, a copper salt of nitric acid is generated in the capillary along with the progress of electrolytic etching, and this is deposited in the end, and the tip of the capillary is clogged. However, there is a problem that the etching reaction rate becomes slower in the supersaturated state. For this reason, this electrolytic etching method has no potential as a practical industrial fine processing technology.
【0015】本発明は、上記のような技術的背景下にな
されたもので、現実的な工業的微細加工技術として発展
性を有する電解エッチング法を提供することを目的とす
る。The present invention has been made under the technical background as described above, and an object thereof is to provide an electrolytic etching method having a possibility of development as a practical industrial fine processing technology.
【0016】[0016]
【問題点を解決するための手段】上記のようなキャピラ
リーエッチング法について更に鋭意検討を行った結果、
本発明の発明者は、下記のような電解エッチング法によ
り上記目的を達成できることを見出し、本発明を完成す
るに到った。[Means for Solving Problems] As a result of further diligent study on the above capillary etching method,
The inventor of the present invention has found that the above object can be achieved by the following electrolytic etching method, and has completed the present invention.
【0017】即ち、本発明によれば、加工対象としての
固体表面を作動極とし、開口先端を有するキャピラリー
中に少なくともその先端が挿入されたプローブ状電極を
対極として使用し、少なくとも前記キャピラリーの開口
先端を通して電解液を流動させつつ行うことを特徴とす
る電解エッチング方法が提供される。That is, according to the present invention, a solid surface to be processed is used as an operating electrode, and a probe-like electrode having at least its tip inserted into a capillary having an opening tip is used as a counter electrode, and at least the opening of the capillary is used. An electrolytic etching method is provided, which is performed while flowing an electrolytic solution through a tip.
【0018】以下、本発明を詳細に説明する。本発明の
キャピラリーエッチング法の特徴は、キャピラリーの開
口先端を通して電解液を流動させることに有り、これを
実現させるためには、キャピラリーの開口先端側におい
て該キャピラリーの内側と外側の電解液を流動連通状態
とすればよい。The present invention will be described in detail below. The feature of the capillary etching method of the present invention resides in that the electrolytic solution is caused to flow through the opening tip of the capillary. In order to realize this, in order to realize this, the electrolytic solution inside and outside the capillary is fluidized and connected. It should be in a state.
【0019】具体的には、作動極としての固体表面とキ
ャピラリーの先端開口の周辺面にギャップを設けるのが
一つの方法である。また、キャピラリーの先端開口の周
辺面部分に少なくとも一つの切欠部を設ければ、例え、
キャピラリーの先端開口周辺面を作動極固体表面に接触
させても流通連通状態を実現できる(勿論、この場合に
ギャップを設けてもよい)。Specifically, one method is to provide a gap between the solid surface as the working electrode and the peripheral surface of the tip opening of the capillary. Further, if at least one notch is provided in the peripheral surface portion of the tip opening of the capillary, for example,
Even if the peripheral surface of the tip end opening of the capillary is brought into contact with the surface of the working electrode solid, the flow communication can be realized (of course, a gap may be provided in this case).
【0020】上記のギャップの大きさは、キャピラリー
の先端開口の形状、大きさ等によって異なってくるのが
一般的であるが、例えば、0.01μm〜20μm程
度、好ましくは0.1μm〜10μm程度とすればよ
い。上記先端開口が大きくなるに従って、ギャップも大
きくするのが一般的である。The size of the above-mentioned gap generally varies depending on the shape, size, etc. of the tip opening of the capillary. For example, about 0.01 μm to 20 μm, preferably about 0.1 μm to 10 μm. And it is sufficient. Generally, the larger the tip opening, the larger the gap.
【0021】上記の少なくとも一つの切欠部を設ける場
合、その形状や大きさはキャピラリーの形状、大きさに
応じて選択すれば良く、特に制限されるものでは無い。
この場合、切欠部による電流分布の乱れにより生ずる効
果を無視できる程度にしたければ、キャピラリーを回転
させつつ電解エッチング操作を行えば良い。When at least one notch is provided, its shape and size may be selected according to the shape and size of the capillary, and is not particularly limited.
In this case, if the effect caused by the disturbance of the current distribution due to the cutout portion can be neglected, the electrolytic etching operation may be performed while rotating the capillary.
【0022】キャピラリーとしては、電解液と作用せ
ず、電流分布の広がりを抑制することができるものであ
れば、特に制限されず、各種材料のものを使用できる。
例えば、アクリル系等のプラスチック中空繊維やガラス
キャピラリーを使用することができる。先端開口部とし
ては、これらキャピラリーそのものを用いても良いし、
プラスチックやガラス板に小孔を開け、これを上記のよ
うなキャピラリーの先端に接着して設けても良い。The capillary is not particularly limited as long as it does not interact with the electrolytic solution and can suppress the spread of the current distribution, and various materials can be used.
For example, acrylic hollow plastic fibers or glass capillaries can be used. These capillaries themselves may be used as the tip opening,
A small hole may be formed in a plastic or glass plate, and the small hole may be attached to the tip of the capillary as described above.
【0023】このようなキャピラリーの電解液中におけ
る位置固定を確実とするために、プラスチック製等の治
具を使用してもよい。このような治具には、作動極に対
面する側に、外部の電解液と連通するような溝を一本以
上を設け、キャピラリーの先端開口を通しての電解液の
流動を妨げ無いようにする。A jig made of plastic or the like may be used to secure the position fixing of the capillary in the electrolytic solution. Such a jig is provided with one or more grooves on the side facing the working electrode so as to communicate with an external electrolytic solution so as not to hinder the flow of the electrolytic solution through the tip opening of the capillary.
【0024】キャピラリーの断面形状やキャピラリーの
先端開口の形状も特に制限されるものでは無く、三角、
四角等の多角形、円形、楕円形、長方形、その他種々の
形状を採り得るが、円形が最も一般的で好ましい。ま
た、キャピラリーは、先端開口に向かって、先細りにな
っていても、先細りになっていなくても良い。The cross-sectional shape of the capillaries and the shape of the tip opening of the capillaries are not particularly limited, and may be triangular,
Although various shapes such as a square, a polygon, a circle, an ellipse, a rectangle and the like can be adopted, the circle is the most general and preferable. Further, the capillary may or may not be tapered toward the tip opening.
【0025】キャピラリーの先端開口の大きさは、エッ
チングの目的等により異なってくるため、特に制限され
るものでは無いが、0.1μm〜2mm程度が好ましく、
1μm〜100μm程度が更に好ましく、先端開口の形
成し易さも考慮すると3μm〜50μmが更にもっと好
ましい。該先端開口の大きさを余り小さくするのはキャ
ピラリーの加工が困難となるし、該先端開口が余り大き
いとサイドエッチングが生じ易くなるので好ましくな
い。該先端開口が小さくなる異方性エッチングに近づ
く。The size of the opening of the tip of the capillary is not particularly limited because it depends on the purpose of etching and the like, but is preferably about 0.1 μm to 2 mm,
The thickness is more preferably about 1 μm to 100 μm, and further preferably 3 μm to 50 μm in consideration of the ease of forming the tip opening. It is not preferable to make the size of the tip opening too small, because it becomes difficult to process the capillary, and if the tip opening is too large, side etching is likely to occur. It approaches anisotropic etching in which the tip opening becomes smaller.
【0026】このようなキャピラリーに挿入する対極の
材料としては、カーボン、白金、金ステンレス鋼、ニッ
ケル、銅、鉛等を挙げることができる。キャピラリー中
に、これらの線材を直線状で挿入しても良く、例えば、
スプリング状にして挿入しても良い。Examples of the counter electrode material to be inserted into such a capillary include carbon, platinum, gold stainless steel, nickel, copper and lead. These wires may be inserted in a straight line into the capillary, for example,
It may be inserted in the form of a spring.
【0027】加工対象である作動極としては、銅、ニッ
ケル、アルミニウム、ステンレス鋼、シリコン、白金、
金等を挙げることができるが、これらに限定されるもの
では無い。As the working electrode to be processed, copper, nickel, aluminum, stainless steel, silicon, platinum,
Examples thereof include gold, but are not limited to these.
【0028】参照極として、銀・塩化銀電極、銅・硫酸
銅電極、アンチモン電極、カロメル電極等を使用するこ
とができる。As the reference electrode, a silver / silver chloride electrode, a copper / copper sulfate electrode, an antimony electrode, a calomel electrode or the like can be used.
【0029】電解液に使用する電解質は、作動極の材料
によって異なってが、硝酸ナトリウム、硝酸カリウム、
弗化ナトリウム、弗化カリウム、塩化第二鉄、塩化カリ
ウム、塩化ナトリウム、硝酸、塩酸、硫酸等を例として
挙げることができる。The electrolyte used in the electrolytic solution varies depending on the material of the working electrode, but may be sodium nitrate, potassium nitrate,
Examples thereof include sodium fluoride, potassium fluoride, ferric chloride, potassium chloride, sodium chloride, nitric acid, hydrochloric acid and sulfuric acid.
【0030】所要に応じ、電解液に燐酸、チオ尿素、サ
ッカリン、酢酸鉛等の添加剤(平滑剤)を加えても良
い。If desired, an additive (smoothing agent) such as phosphoric acid, thiourea, saccharin or lead acetate may be added to the electrolytic solution.
【0031】キャピラリー中に挿入された対極と作動極
の間の距離は、特に限定されるものでは無いが、例え
ば、3mm〜2cmとすればよく、好ましくは5mm〜1cmと
することができる。一般的に、上記の距離が長いと液抵
抗が大きくなり反応の制御が難しくなる傾向がある。The distance between the counter electrode and the working electrode inserted in the capillary is not particularly limited, but may be, for example, 3 mm to 2 cm, preferably 5 mm to 1 cm. Generally, if the above distance is long, the liquid resistance becomes large and the reaction tends to be difficult to control.
【0032】電解エッチング操作中に、キャピラリーを
回転させてエッチング端面の均一化を図っても良く、ま
た、特に切欠の無い先端開口周辺面のような場合は、通
常、回転させる必要は無い。During the electrolytic etching operation, the capillaries may be rotated to make the etching end face uniform, and in particular, in the case of a peripheral surface of the tip opening having no notch, it is not necessary to rotate the capillaries.
【0033】キャピラリーの開口先端を通して流動する
電解液の流れの方向はキャピラリー内からキャピラリー
外への方向でも良いし、その逆でも良い。前者の場合、
電解反応生成物により対極が汚染されるのを防ぐことが
でき、後者の場合、電解反応速度を早めることができる
と言うそれぞれの特徴が有る。The flow direction of the electrolytic solution flowing through the opening end of the capillary may be from the inside of the capillary to the outside of the capillary, or vice versa. In the former case,
It is possible to prevent the counter electrode from being contaminated by the electrolytic reaction product, and in the latter case, there are respective characteristics that the electrolytic reaction rate can be accelerated.
【0034】電解液の流動速度は、キャピラリーの先端
開口の大きさ、作動極と対極のギャップの大きさ等によ
って最適速度が異なってくるので一概に言えず、上記の
ファクターと共に、エッチングの目的等を考慮して決定
すれば良い。一般的に、流動速度が低すぎるとエッチン
グ効率(使用総電気量に対するエッチング量)が低下す
るが、或る程度の流動速度以上となるとエッチング効率
はほぼ一定となる傾向にある。The flow rate of the electrolytic solution cannot be generally stated because the optimum rate varies depending on the size of the opening at the tip of the capillary, the size of the gap between the working electrode and the counter electrode, and the like, together with the above factors, the purpose of etching, etc. It should be decided in consideration of. Generally, if the flow rate is too low, the etching efficiency (etching amount with respect to the total amount of electricity used) decreases, but if it exceeds a certain flow rate, the etching efficiency tends to be substantially constant.
【0035】作動極としての加工対象固体表面上に、例
えば、フォトリソグラフィーによるマスクを用いるか否
かは場合によって異なる。作動極と対極の間のギャップ
が小さい場合は、通常マスク無でも綺麗な輪郭を持って
エッチング孔を形成することができる。作動極と対極の
間のギャップが大きいとオーバーエッチングが大きくな
るので、マスクを使用する場合も有る。Whether or not to use, for example, a photolithographic mask on the solid surface to be processed as the working electrode depends on the case. When the gap between the working electrode and the counter electrode is small, the etching hole can be formed with a clean contour without a mask. If the gap between the working electrode and the counter electrode is large, overetching becomes large, and therefore a mask may be used in some cases.
【0036】電解エッチング操作を行うに当たって、電
流パルスもしくは電位パルスを用いるのが好ましい。パ
ルス法は、エッチング加工面の平滑化に有効で、エッチ
ング小孔のサイドエッチング(オーバーエッチング)を
小さくでき、一般にエッチング効率を向上させることが
できる場合が多い。In carrying out the electrolytic etching operation, it is preferable to use a current pulse or a potential pulse. The pulse method is effective in smoothing the etched surface, can reduce side etching (overetching) of etching small holes, and can generally improve etching efficiency in many cases.
【0037】電流パルスの方が、一般的にパルス高さを
一定に制御し易く、また、エッチング効率向上に利点を
有し、電位パルスは、反応の選択性向上が可能という利
点を有する。The current pulse is generally easier to control the pulse height constant, and has an advantage in improving the etching efficiency. The potential pulse has an advantage in that the selectivity of the reaction can be improved.
【0038】また、電流パルスとしては酸化電流パルス
と還元電流パルスが有るが、電位をゼロとして、還元電
流パルスのみでは電解エッチングは進行しない。しか
し、一定の還元電流とし酸化電流パルスを流し、結果と
して還元電流パルスを流すのと同じ状態とするか、一定
の酸化電流とし還元電流パルスを流すかすると、上記の
ような効果を期待できる。このような点に関しては、電
位パルスの場合も電流パルスの場合と同様に考えること
ができる。There are an oxidation current pulse and a reduction current pulse as the current pulse, but the potential is set to zero and the electrolytic etching does not proceed only with the reduction current pulse. However, if the reducing current pulse is supplied with a constant reducing current and the same state as that of the reducing current pulse is supplied as a result, or if the reducing current pulse is supplied with a constant oxidizing current, the above effect can be expected. Regarding such a point, it can be considered in the case of the potential pulse as in the case of the current pulse.
【0039】この際、デューティー比(酸化電流パルス
の還元電流時間に対する比)は、極端に大きいか小さい
場合を除いて、作用効果面で大きな影響は無い。At this time, the duty ratio (ratio of the oxidation current pulse to the reduction current time) has no great effect in terms of action and effect except when it is extremely large or small.
【0040】特に加工対象となる固体表面が不動態皮膜
を形成する傾向のある材質の場合、電流パルス又は電位
パルスの使用はエッチング効率の向上に大きく貢献す
る。Especially when the solid surface to be processed is a material which tends to form a passive film, the use of current pulse or potential pulse greatly contributes to the improvement of etching efficiency.
【0041】例えば、不動態皮膜を形成しない銅を作動
極とし、3M硝酸ナトリウム溶液を電解液として用いて
電解エッチングする場合には、還元電流を流さず、酸化
電流パルス(アノードパルス)を流した場合、パルス高
さがごく小さい(1mA以下)場合にパルス高さの増大に
伴いエッチング効率が良くなるが、それ以外のパルス高
さの領域では、エッチング効率は酸化電流パルスの高さ
に殆ど依存し無いので(銅表面は、完全活性表面と考え
られる)、電流パルスの使用によるエッチング効率の向
上効果は余り無いが、特に短波長側ではサイドエッチン
グを小さくする効果が有る。For example, when electrolytic etching is performed using copper that does not form a passivation film as a working electrode and a 3M sodium nitrate solution as an electrolytic solution, a reducing current is not passed but an oxidizing current pulse (anode pulse) is passed. In this case, when the pulse height is very small (1 mA or less), the etching efficiency improves as the pulse height increases, but in other pulse height regions, the etching efficiency depends mostly on the height of the oxidation current pulse. Since it is not performed (the copper surface is considered to be a fully active surface), the effect of improving the etching efficiency by using the current pulse is not so large, but there is an effect of reducing the side etching especially on the short wavelength side.
【0042】例えば、不動態化皮膜を形成するニッケル
を作動極とし、3M硝酸ナトリウム溶液を電解液とし
て、還元側には電流を入れず、酸化電流パルス(アノー
ド電流パルス)を流した場合、パルス高さの増大に伴い
エッチング効率が向上するが、同一量のエッチングを行
うのに銅の場合と比べて数十倍の電気量を要する。これ
は、ニッケル表面上に有る不動態化皮膜によりエッチン
グが大幅に制限されているが、アノード電流パルスによ
り該皮膜の一部が破壊されてエッチングが進行するもの
と考えられる。For example, when nickel which forms a passivation film is used as a working electrode and a 3M sodium nitrate solution is used as an electrolytic solution, a current is not applied to the reducing side, and an oxidizing current pulse (anode current pulse) is applied. Although the etching efficiency improves as the height increases, the same amount of etching requires several tens of times as much electricity as copper. It is considered that, although the etching is largely restricted by the passivation film on the nickel surface, a part of the film is destroyed by the anode current pulse and the etching proceeds.
【0043】アノード電流パルスと交互にカソード電流
パルス(還元電流パルス)を流すと、不動態化皮膜を還
元しつつエッチングを行う形となり、更にエッチング効
率を向上させる傾向にある。この場合、一旦還元され消
滅した不動態化皮膜が再度酸化再生されるまでの時間は
10ms(マイクロ秒)のオーダーと考えられ、従って、カ
ソード電流パルスの波長は、不動態化皮膜還元効果を発
現させるためには短い方が良い。しかし、約2msより小
さい波長では、電気二重層充電による逆効果が生じ、エ
ッチング効率は低下する傾向にある。従って、上記のよ
うなニッケルのエッチングでは、約2ms〜約20msの範囲
内のアノード電流パルス波長が、オフ・パルス時に一部
還元された不動態化皮膜の再形成とエッチングが競合す
るので好ましい。When a cathode current pulse (reduction current pulse) is alternately applied to the anode current pulse, etching is performed while reducing the passivation film, and the etching efficiency tends to be further improved. In this case, the time until the passivation film that has been reduced and disappeared is reoxidized and regenerated is
It is considered to be on the order of 10 ms (microseconds), and thus the wavelength of the cathode current pulse should be shorter in order to exert the passivation film reduction effect. However, at wavelengths shorter than about 2 ms, the opposite effect due to electric double layer charging occurs, and the etching efficiency tends to decrease. Therefore, in the nickel etching as described above, an anode current pulse wavelength in the range of about 2 ms to about 20 ms is preferable because the reforming of the partially reduced passivation film during the off pulse competes with the etching.
【0044】このようなニッケル等の電解エッチングで
は、不動態化皮膜は溶存酸素不足状態では形成され難く
なるので、エッチングの進行に伴い小孔の深さが増すに
従い、酸素拡散の遅れによりエッチング速度が加速され
る傾向にある。即ち、意図的に孔蝕を起こしているかの
ような状態となるのである。なお、この場合、不動態化
皮膜の存在・形成のためにオーバーエッチング(サイド
エッチング)が少ない。In such electrolytic etching of nickel or the like, the passivation film is less likely to be formed in a state of insufficient dissolved oxygen. Therefore, as the depth of the small holes increases as the etching progresses, the oxygen diffusion is delayed and the etching rate increases. Tend to be accelerated. That is, the state is such that pitting is intentionally caused. In this case, over-etching (side etching) is small due to the existence and formation of the passivation film.
【0045】また、ニッケル等の不動態化皮膜を形成す
る金属の電解エッチングの場合、エッチング環境中にハ
ロゲンイオンが存在すると、不動態皮膜の化学的破壊
(孔蝕)が生じ易くなり、小孔(ピット)以外の部分は
不動態化皮膜で覆われ、酸素のカソード還元はその全面
で起こり、局部電池を形成し、ピット内のアノード溶解
を加速する。一旦ピットが発生すると、その内部にハロ
ゲンイオンの濃縮及びpHの変化が起こり、ピットの成
長は持続する。Further, in the case of electrolytic etching of a metal such as nickel which forms a passivation film, if halogen ions are present in the etching environment, chemical destruction (pitting corrosion) of the passivation film is likely to occur, resulting in small holes. Portions other than (pits) are covered with a passivation film, and cathodic reduction of oxygen occurs on the entire surface, forming a local cell and accelerating anode dissolution in the pits. Once pits are generated, halogen ion concentration and pH change occur inside the pits, and pit growth continues.
【0046】このようなことから、ニッケル等の不動態
化皮膜を形成する金属の電解エッチングの場合、支持電
解質溶液に塩素イオン等のハロゲンイオンを共存させる
のが好ましい。かかるハロゲンイオン源としては、例え
ば、ハロゲンのナトリウム塩、カリウム塩等を使用でき
る。ハロゲンイオンの共存により、エッチング効率は飛
躍的に向上する。From the above, in the case of electrolytic etching of a metal forming a passivation film such as nickel, it is preferable that halogen ions such as chlorine ions coexist in the supporting electrolyte solution. As the halogen ion source, for example, sodium salts, potassium salts, etc. of halogen can be used. The coexistence of halogen ions dramatically improves the etching efficiency.
【0047】[0047]
【作用】対極としてのプローブ電極を挿入したキャピラ
リーを用いることにより、電解電流分布の均一化を図る
ことができ、例えマスクを使用しなくても作動極として
の固体表面にキャピラリーの先端開口にほぼ対応するエ
ッチング小孔を形成することができる。[Function] By using a capillary in which a probe electrode is inserted as a counter electrode, the distribution of the electrolytic current can be made uniform, and even if a mask is not used, the tip surface of the capillary can be almost formed on the solid surface as the working electrode. Corresponding etched pores can be formed.
【0048】対極としてのプローブ電極を挿入したキャ
ピラリーの先端開口を通して電解液の流動を行うので、
電解反応生成物がキャピラリー内に蓄積・析出し、キャ
ピラリーの先端開口を詰まらせたり、対極を汚染したり
するのを防ぐことができ、また、電解反応生成物がエッ
チング領域で過飽和状態になり、エッチング速度の減速
が生ずることを防ぐことができ、工業的微細加工法とし
ての実現性が極めて高い。Since the electrolyte flows through the tip opening of the capillary into which the probe electrode as the counter electrode is inserted,
It is possible to prevent the electrolytic reaction product from accumulating / precipitating in the capillary, clogging the tip opening of the capillary, or contaminating the counter electrode, and the electrolytic reaction product becomes supersaturated in the etching region, It is possible to prevent the deceleration of the etching rate from occurring, and it is extremely feasible as an industrial fine processing method.
【0049】[0049]
【実施例】以下、添付の図面を参照しつつ、実施例によ
り本発明を更に具体的且つ詳細にに説明するが、本発明
は実施例に限定されるものでは無い。図1は、本発明の
電解エッチング方法を実施するための実験装置の説明図
で、以下の実施例で用いたものを概略的に描写した図で
ある。この図における「キャピラリー電極8」(後述す
る)の描写は不正確であるが、作図を簡略化したためで
あり、以下の説明により実施例で用いた実際のキャピラ
リー電極がどのようなものか充分理解されるはずであ
る。EXAMPLES The present invention will be described more specifically and in detail below with reference to the accompanying drawings, but the present invention is not limited to the examples. FIG. 1 is an explanatory diagram of an experimental apparatus for carrying out the electrolytic etching method of the present invention, and is a diagram schematically illustrating one used in the following examples. The depiction of "capillary electrode 8" (described later) in this figure is inaccurate, but this is because the drawing is simplified, and the following description will provide a sufficient understanding of what the actual capillary electrode used in the examples is. Should be done.
【0050】実施例 電解エッチングの対極(CE)として使用するプローブ
電極を挿入した先端キャピラリー状ガラス管(ここで、
これを「キャピラリー電極8」と言う)は、次の様にし
て製作した。EXAMPLE A tip-capillary glass tube having a probe electrode used as a counter electrode (CE) for electrolytic etching (here,
This is referred to as "capillary electrode 8") was manufactured as follows.
【0051】外径2mm、内径1mm、長さ90mmのガラス管
の先端部分をを外径約5μmの毛細管に加工した後、先
端面を研磨して平滑にした。次にガラス管の後部にプラ
スチック製の二股プラグを取付け、その一方の口からは
直径0.2 mmの白金線(対極CE)をガラス管の中に差し
込んでエポキシ樹脂により接着・注封した。もう一方の
口にはマイクロチューブポンプ9〔MP−3、東京理化
機械(株)製〕により送られる電解液を上記毛細管から
流出させるためのシリコンゴム製のチューブ7を同様に
エポキシ樹脂により接着・注封した。The tip of a glass tube having an outer diameter of 2 mm, an inner diameter of 1 mm and a length of 90 mm was processed into a capillary tube having an outer diameter of about 5 μm, and the tip surface was polished to be smooth. Next, a plastic bifurcated plug was attached to the rear part of the glass tube, and a platinum wire (counter electrode CE) with a diameter of 0.2 mm was inserted into the glass tube from one of the ports, and the resin was bonded and potted with epoxy resin. At the other end, a silicone rubber tube 7 for causing the electrolytic solution sent by a microtube pump 9 [MP-3, manufactured by Tokyo Rika Kikai Co., Ltd.] to flow out from the capillary tube is similarly bonded with an epoxy resin. It was potted.
【0052】マイクロマニピュレーターを用いて、この
ようにして製作されたキャピラリー電極8の先端を作動
極(WE)としてのエッチング用試料の表面から1μm
程度上方の位置に設定した。なお、作動極(WE)と対
極(CE)との間の距離は約5mmであった。Using a micromanipulator, the tip of the capillary electrode 8 thus manufactured is 1 μm from the surface of the etching sample as the working electrode (WE).
It was set at a position slightly above. The distance between the working electrode (WE) and the counter electrode (CE) was about 5 mm.
【0053】一方、作動極(WE)としてエッチングを
受けるエッチング用試料の電位の規制及び計測を行うた
めの照合電極(RE)として銀・塩化銀参照電極を用い
た。On the other hand, a silver / silver chloride reference electrode was used as a reference electrode (RE) for regulating and measuring the potential of the etching sample that was subjected to etching as the working electrode (WE).
【0054】以上の三つの電極を、エッチング操作に際
して電位規制又は電流規制を行うための装置であるポテ
ンショ・ガルバノスタット(以下、単に「ポテンショス
タット」と呼ぶ)11〔2000、東方技研(株)製〕
に接続した。更に、このポテンショスタット11を電位
パルス又は電流パルス状態で作動させるための装置であ
るファンクションジェネレーター12〔FG−02、東
方技研(株)〕を上記ポテンショスタット11に接続し
た。The above three electrodes are potentio-galvanostats (hereinafter simply referred to as "potentiostats") 11 [2000, manufactured by Toho Giken Co., Ltd., which is a device for regulating the potential or the current during the etching operation. ]
Connected to. Further, a function generator 12 [FG-02, Toho Giken Co., Ltd.], which is a device for operating the potentiostat 11 in a potential pulse or current pulse state, was connected to the potentiostat 11.
【0055】エッチング用試料としては、非耐蝕性金属
の例として厚さ10μmの銅箔、並びに耐蝕性金属の例と
して厚さ10μmのニッケル箔を用いた。As the etching sample, a copper foil having a thickness of 10 μm as an example of a non-corrosion resistant metal and a nickel foil having a thickness of 10 μm as an example of a corrosion resistant metal were used.
【0056】電解液としては、銅箔のエッチングには3
M硝酸ナトリウム液を用い、ニッケル箔のエッチングに
は3M硝酸ナトリウム+ 0.5M塩化ナトリウム液を用い
た。液温は、 300K一定とした。As an electrolytic solution, 3 is used for etching copper foil.
A M sodium nitrate solution was used, and a 3M sodium nitrate + 0.5M sodium chloride solution was used for etching the nickel foil. The liquid temperature was kept constant at 300K.
【0057】電解液を電解槽10内に満たすと共に、マ
イクロチューブポンプ9によりキャピラリー電極8の先
端開口から流出(流量:約3ml/hr)させることによ
り、常に新しい電解液によりエッチングを行うようにし
た。なお、電解液は、電解槽10からマイクロチューブ
7’を通って、マイクロチューブポンプ9へ戻り、循環
する。By filling the electrolytic bath 10 with the electrolytic solution and letting the microtube pump 9 flow out from the tip opening of the capillary electrode 8 (flow rate: about 3 ml / hr), etching is always performed with a new electrolytic solution. .. The electrolytic solution passes from the electrolytic cell 10 through the microtube 7 ′, returns to the microtube pump 9, and circulates.
【0058】電解槽10内に電解液を満たして後、エッ
チング用試料(WE)とキャピラリー電極8を設置して
からポテンショスタット11と各電極の接続を行った。After the electrolytic bath 10 was filled with the electrolytic solution, the etching sample (WE) and the capillary electrode 8 were installed, and then the potentiostat 11 and each electrode were connected.
【0059】電解エッチングには、ファンクションジェ
ネレーター12を通してポテンショスタット11から発
生させた波高−10μA、波長 500msのアノード電流パル
スをデューティー比(duty ratio、アノード電流パルス
のカソード電流時間に対する比)50%で用いた。ここ
で、x−tレコーダー13〔R302V、理化電気
(株)製〕は、電位の変化を記録した。For electrolytic etching, an anode current pulse having a wave height of −10 μA and a wavelength of 500 ms generated from the potentiostat 11 through the function generator 12 was used with a duty ratio of 50% to the cathode current time. I was there. Here, the xt recorder 13 [R302V, manufactured by Rika Denki Co., Ltd.] recorded a change in potential.
【0060】このようにして電解エッチングを行った結
果は次の通りである。エッチングされた銅箔、ニッケル
箔のいづれにも直径約5μmの円形の小孔が貫通してい
ることが、走査型電子顕微鏡(SEM)によって確認さ
れた。The results of electrolytic etching as described above are as follows. It was confirmed by a scanning electron microscope (SEM) that a circular small hole having a diameter of about 5 μm penetrated through both the etched copper foil and nickel foil.
【0061】銅箔の場合、該小孔の形状は、ほぼ真円で
オーバーエッチングも殆ど見られ無かった。一方、ニッ
ケル箔の場合は、該小孔はやや歪んだ形の円形であり、
オーバーエッチングは殆ど見られないものの、側壁には
結晶粒界の出現による凹凸が観察された。In the case of copper foil, the shape of the small holes was almost a perfect circle, and almost no overetching was observed. On the other hand, in the case of nickel foil, the small holes are circular with a slightly distorted shape,
Although almost no over-etching was observed, unevenness due to the appearance of grain boundaries was observed on the side wall.
【0062】電解エッチング速度は、いづれの場合も毎
分2〜3μm程度であった。これはドライエッチング法
に比べて非常な高速であり、本発明の方法で更に電解エ
ッチング速度を向上させることは可能である。In each case, the electrolytic etching rate was about 2 to 3 μm. This is much faster than the dry etching method, and it is possible to further improve the electrolytic etching rate by the method of the present invention.
【0063】なお、銅箔の電解エッチングの場合、例え
ば、30分程度と電解時間を余り長くすると、小孔の側
壁に「だれ」が生じることが分かった。In the case of electrolytic etching of a copper foil, it was found that if the electrolysis time is too long, for example, about 30 minutes, "drip" will occur on the side wall of the small hole.
【0064】[0064]
【発明の効果】本発明の電解エッチング方法によれば、
エッチング領域における電解電流分布の均一化を図るこ
とができ、例えマスクを使用しなくても作動極としての
固体表面にキャピラリーの先端開口にほぼ対応するエッ
チング小孔を形成することができる。According to the electrolytic etching method of the present invention,
The distribution of the electrolytic current in the etching region can be made uniform, and even if a mask is not used, it is possible to form an etching small hole substantially corresponding to the tip opening of the capillary on the solid surface as the working electrode.
【0065】対極としてのプローブ電極を挿入したキャ
ピラリーの先端開口を通して電解液の流動を行うので、
電解反応生成物がキャピラリー内に蓄積・析出し、キャ
ピラリーの先端開口を詰まらせたり、対極を汚染したり
するのを防ぐことができ、また、電解反応生成物がエッ
チング領域で過飽和状態になり、エッチング速度の減速
が生ずることを防ぐことができ、工業的微細加工法とし
ての実現性が極めて高い。Since the electrolyte flows through the tip opening of the capillary into which the probe electrode as the counter electrode is inserted,
It is possible to prevent the electrolytic reaction product from accumulating / precipitating in the capillary, clogging the tip opening of the capillary, or contaminating the counter electrode, and the electrolytic reaction product becomes supersaturated in the etching region, It is possible to prevent the deceleration of the etching rate from occurring, and it is extremely feasible as an industrial fine processing method.
【0066】ドライエッチング法の場合、マスクとして
のレジスト層も同時にエッチングされるために最大エッ
チング深さがおよそ10μm程度と制限されるが、本発
明の電解エッチング方法では、これより遙に深いエッチ
ングが可能である。In the case of the dry etching method, the maximum etching depth is limited to about 10 μm because the resist layer as a mask is also etched at the same time. In the electrolytic etching method of the present invention, however, etching far deeper than this is possible. It is possible.
【0067】本発明の方法は、キャピラリーの移動を例
えばコンピューター制御することにより、その先端を走
査させつつ電解エッチング操作を行うことが可能と考え
られ、マイクロマシニングの切削・研磨手段として、複
雑な形状のマイクロマシンや更には印刷配線板や或る種
の半導体装置等の製作に利用できるものと期待される。In the method of the present invention, it is considered that the electrolytic etching operation can be performed while scanning the tip of the capillary by controlling the movement of the capillary, for example, by a computer. As a cutting / polishing means for micromachining, a complicated shape can be used. It is expected that it can be used for manufacturing micromachines, printed wiring boards, semiconductor devices of some kind, and the like.
【図1】図1は、本発明の電解エッチング方法を実施す
るための装置の一例の概略説明図である。FIG. 1 is a schematic explanatory view of an example of an apparatus for carrying out the electrolytic etching method of the present invention.
WE 作動極 CE 対極 RE 照合電極 7 マイクロチューブ 7’ マイクロチューブ 8 キャピラリー電極 9 マイクロチューブポンプ 10 電解槽 11 ポテンショスタット 12 ファンクションジェネレーター 13 x−tレコーダー WE Working electrode CE Counter electrode RE Reference electrode 7 Micro tube 7'Micro tube 8 Capillary electrode 9 Micro tube pump 10 Electrolyzer 11 Potentiostat 12 Function generator 13 xt recorder
Claims (3)
し、開口先端を有するキャピラリー中に少なくともその
先端が挿入されたプローブ状電極を対極として使用し、
前記キャピラリーの開口先端を通して電解液を流動させ
つつ行うことを特徴とする電解エッチング方法。1. A solid electrode to be machined is used as a working electrode, and a probe electrode having at least its tip inserted into a capillary having an open tip is used as a counter electrode.
An electrolytic etching method, which is performed while flowing an electrolytic solution through an opening end of the capillary.
先端との間にギャップを設けて行うことを特徴とする請
求項1に記載の電解エッチング方法。2. The electrolytic etching method according to claim 1, wherein a gap is provided between the solid surface and an opening tip of the capillary.
ことを特徴とする請求項1又は2に記載の電解エッチン
グ方法。3. The electrolytic etching method according to claim 1, wherein the method is performed by using a current pulse or a potential pulse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27628391A JPH0593300A (en) | 1991-09-30 | 1991-09-30 | Electrolytic etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27628391A JPH0593300A (en) | 1991-09-30 | 1991-09-30 | Electrolytic etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0593300A true JPH0593300A (en) | 1993-04-16 |
Family
ID=17567289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27628391A Pending JPH0593300A (en) | 1991-09-30 | 1991-09-30 | Electrolytic etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0593300A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5993637A (en) * | 1996-12-06 | 1999-11-30 | Canon Kabushiki Kaisha | Electrode structure, electrolytic etching process and apparatus |
| JP2001316898A (en) * | 2000-05-01 | 2001-11-16 | Chuo Seisakusho Ltd | Electro-chemical liquid of aluminum and electro-chemical processing using the same |
| WO2002025249A3 (en) * | 2000-09-22 | 2002-10-31 | Markus Buechler | Electrochemical cell, use of the electrochemical cell, and method for electrolytically contacting and electrochemically influencing surfaces |
| WO2003098673A1 (en) * | 2002-05-21 | 2003-11-27 | Sony Corporation | Polishing method and polishing system, and method for fabricating semiconductor device |
| JP2009235578A (en) * | 2001-06-15 | 2009-10-15 | Replisaurus Technologies Ab | Method and electrode for defining and replicating structure in conducting material |
| EP3053722A1 (en) * | 2015-02-06 | 2016-08-10 | National Taiwan University of Science and Technology | Apparatus and method for processing a substrate |
-
1991
- 1991-09-30 JP JP27628391A patent/JPH0593300A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5993637A (en) * | 1996-12-06 | 1999-11-30 | Canon Kabushiki Kaisha | Electrode structure, electrolytic etching process and apparatus |
| JP2001316898A (en) * | 2000-05-01 | 2001-11-16 | Chuo Seisakusho Ltd | Electro-chemical liquid of aluminum and electro-chemical processing using the same |
| WO2002025249A3 (en) * | 2000-09-22 | 2002-10-31 | Markus Buechler | Electrochemical cell, use of the electrochemical cell, and method for electrolytically contacting and electrochemically influencing surfaces |
| JP2009235578A (en) * | 2001-06-15 | 2009-10-15 | Replisaurus Technologies Ab | Method and electrode for defining and replicating structure in conducting material |
| WO2003098673A1 (en) * | 2002-05-21 | 2003-11-27 | Sony Corporation | Polishing method and polishing system, and method for fabricating semiconductor device |
| EP3053722A1 (en) * | 2015-02-06 | 2016-08-10 | National Taiwan University of Science and Technology | Apparatus and method for processing a substrate |
| CN105856444A (en) * | 2015-02-06 | 2016-08-17 | 黄炳照 | Substrate and its processing method and device |
| JP2016166407A (en) * | 2015-02-06 | 2016-09-15 | 國立台灣科技大學 | Substrate, method for processing substrate, and apparatus for processing substrate |
| US10211105B2 (en) | 2015-02-06 | 2019-02-19 | National Taiwan University Of Science And Technology | Apparatus for cutting substrate and system for processing same |
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