JPH0594861A - Discharge type surge absorption element - Google Patents
Discharge type surge absorption elementInfo
- Publication number
- JPH0594861A JPH0594861A JP28051791A JP28051791A JPH0594861A JP H0594861 A JPH0594861 A JP H0594861A JP 28051791 A JP28051791 A JP 28051791A JP 28051791 A JP28051791 A JP 28051791A JP H0594861 A JPH0594861 A JP H0594861A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- surge
- trigger
- electrode film
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims description 39
- 230000020169 heat generation Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 47
- 239000010409 thin film Substances 0.000 abstract description 10
- 230000004043 responsiveness Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 238000010891 electric arc Methods 0.000 abstract description 5
- 230000037452 priming Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 7
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、電話回線等に印加さ
れる誘導雷等のサージを吸収して電子機器が損傷するこ
とを防止する放電型サージ吸収素子に係り、特に、素子
を偏平化すると共に、トリガ放電電極膜を電圧非直線抵
抗体によって構成した放電型サージ吸収素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a discharge type surge absorbing element which absorbs a surge such as inductive lightning applied to a telephone line or the like to prevent damage to electronic equipment, and more particularly, to flatten the element. In addition, the present invention relates to a discharge type surge absorbing element in which a trigger discharge electrode film is composed of a voltage non-linear resistor.
【0002】[0002]
【従来の技術】従来、誘導雷等のサージから電子機器の
電子回路を保護するためのサージ吸収素子として、電圧
非直線特性を有する高抵抗体素子よりなるバリスタや、
放電間隙を気密容器内に収容したアレスタ等が広く使用
されている。2. Description of the Related Art Conventionally, as a surge absorbing element for protecting an electronic circuit of an electronic device from a surge such as induced lightning, a varistor made of a high resistance element having a voltage non-linear characteristic,
An arrester or the like in which the discharge gap is housed in an airtight container is widely used.
【0003】上記バリスタは、サージ吸収の応答性に優
れるものの、単位面積当たりの電流耐量が比較的小さ
く、したがって大きなサージ電流を効率よく吸収するこ
とが困難である。また、上記アレスタはその放電間隙に
主放電を生成することにより、電流耐量を大きくするこ
とができるのであるが、サージの印加から主放電までに
要する時間が長く、その応答性に問題がある。Although the above-mentioned varistor is excellent in response to surge absorption, it has a relatively small current withstanding capacity per unit area, and therefore it is difficult to efficiently absorb a large surge current. Further, although the above-mentioned arrester can increase the current withstanding capacity by generating the main discharge in the discharge gap, it takes a long time from the application of the surge to the main discharge, and there is a problem in its responsiveness.
【0004】そこで、図4及び図5に示すように、略円
柱状の絶縁体aの表面に導電性薄膜bを被着させたうえ
で、この導電性薄膜bに幅が0.1mm程度の微小放電間
隙cを周回状に形成して導電性薄膜bを分割すると共
に、絶縁体aの両端に主放電間隙dを隔てて放電電極
e,eを嵌着して上記導電性薄膜b,bと放電電極e,
eとを接続し、これを放電ガスと共に気密容器f内に封
入して外部端子g,gを導出したサージ吸収素子hが提
案されている。Therefore, as shown in FIGS. 4 and 5, a conductive thin film b is deposited on the surface of a substantially cylindrical insulator a, and the conductive thin film b has a width of about 0.1 mm. The conductive thin film b is divided by forming a minute discharge gap c in a circular shape, and the discharge electrodes e, e are fitted to both ends of the insulator a with a main discharge gap d therebetween to form the conductive thin films b, b. And discharge electrode e,
There is proposed a surge absorbing element h which is connected to e and is enclosed with an electric discharge gas in an airtight container f to derive external terminals g, g.
【0005】このサージ吸収素子hにサージが印加され
た場合、まず微小放電間隙cを隔てた導電性薄膜b,b
間に電位差が生じ、これにより微小放電間隙cに電子が
放出されて沿面放電が発生する。次いで、この沿面放電
に伴って生ずる電子のプライミング効果によってグロー
放電へと移行する。そして、このグロー放電がサージ電
流の増加によって主放電間隙dへと転移し、主放電とし
てのアーク放電に移行してサージを吸収する。When a surge is applied to the surge absorbing element h, first, the conductive thin films b, b separated by the minute discharge gap c are formed.
A potential difference is generated between them, whereby electrons are emitted into the minute discharge gap c and a creeping discharge occurs. Next, the transition to glow discharge occurs due to the priming effect of electrons generated by this creeping discharge. Then, the glow discharge is transferred to the main discharge gap d due to the increase of the surge current, and is transferred to the arc discharge as the main discharge to absorb the surge.
【0006】[0006]
【発明が解決しようとする課題】このように、上記サー
ジ吸収素子hは、微小放電間隙cに生ずる元来応答速度
の速い沿面放電をトリガ放電として利用するものである
ため、上記アレスタに比べて高い応答性を実現できると
共に、主放電間隙dに生ずる主放電たるアーク放電によ
ってサージを吸収するものであるため、上記バリスタに
比べて大きな電流耐量を実現できる。As described above, since the surge absorbing element h uses the creeping discharge which originally has a high response speed in the minute discharge gap c as the trigger discharge, it is more than the arrester. A high responsiveness can be realized and a surge can be absorbed by an arc discharge which is a main discharge generated in the main discharge gap d, so that a large current withstanding capacity can be realized as compared with the varistor.
【0007】しかしながら、上記従来のサージ吸収素子
hにあっては、図3に示すように、気密容器fが嵩張る
略円筒形状をなしているため、各種電子機器内部に実装
する際に相当のスペースを確保する必要があり、近年に
おける電子機器の小型化の要請に反するものであった。However, in the conventional surge absorbing element h, as shown in FIG. 3, since the airtight container f has a substantially cylindrical shape which is bulky, a considerable space is required for mounting inside various electronic devices. Must be ensured, which is contrary to the recent demand for miniaturization of electronic devices.
【0008】また、微小放電間隙cを隔てて対向する導
電性薄膜b,bが通常の抵抗体によって構成されている
ため、以下の欠点があった。すなわち、電圧の印加と同
時にその電圧値に比例した電流が流れ始めるため、主放
電間隙に転移する電圧値を安定的に設定することが困難
であり、サージ等の過電圧が急峻に印加された場合に
は、上記サージ吸収素子hの定格電圧を遥かに超えた時
点ではじめて主放電が開始するおそれがあった。しか
も、主放電が開始されるまでの間はサージの吸収が何等
行われないため、その間にサージが電子回路側に印加さ
れ、電子回路を損傷させる危険性があった。Further, since the conductive thin films b, b facing each other with the minute discharge gap c therebetween are made of ordinary resistors, the following drawbacks occur. That is, since a current proportional to the voltage value starts to flow at the same time as the voltage is applied, it is difficult to stably set the voltage value that transitions to the main discharge gap, and when an overvoltage such as a surge is sharply applied. However, the main discharge may start only when the rated voltage of the surge absorbing element h is far exceeded. Moreover, since the surge is not absorbed until the main discharge is started, there is a risk that the surge is applied to the electronic circuit side during that time and the electronic circuit is damaged.
【0009】さらに、電力線との接触事故や、このよう
な事態を想定したULやCSA等の安全規格による過電
圧試験によって、上記サージ吸収素子hの定格電圧以上
の過電圧が連続して印加された場合には、主放電間隙d
に生ずる主放電による過電流の通電が持続状態となる。
そして、この過電流の連続した通電に伴う発熱によって
気密容器fが溶融し、サージ吸収素子hが組み込まれた
回路基板を焼損させることとなり、その結果、上記過電
圧試験の合格基準を充足し得ないのは勿論のこと、実際
の使用状況下においては火災の原因となるおそれもあっ
た。Further, in the case where an overvoltage exceeding the rated voltage of the surge absorbing element h is continuously applied by a contact accident with a power line or an overvoltage test based on safety standards such as UL and CSA assuming such a situation. Is the main discharge gap d
The energization of the overcurrent due to the main discharge that occurs in 1) is maintained.
Then, the airtight container f is melted by the heat generated by the continuous energization of the overcurrent, and the circuit board in which the surge absorbing element h is incorporated is burnt out, and as a result, the pass standard of the overvoltage test cannot be satisfied. Not to mention, there is also a risk of fire in actual use.
【0010】本発明は、上記従来例の欠点に鑑みてなさ
れたものであり、外径形状がコンパクトに納まると共
に、主放電間隙への転移特性の安定化及び対サージ応答
性の向上を達成でき、さらに過電流の連続した通電を遮
断することで焼損事故を未然に防止し、各種安全規格に
適合する放電型サージ吸収素子を実現することを目的と
する。The present invention has been made in view of the above-mentioned drawbacks of the conventional example, and it is possible to achieve a compact outer diameter shape, a stable transfer characteristic to the main discharge gap, and an improvement in surge response. Furthermore, it is an object of the present invention to prevent burnout accidents by interrupting continuous energization of overcurrent and to realize a discharge type surge absorbing element that meets various safety standards.
【0011】[0011]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る放電型サージ吸収素子は、絶縁基板
と、該絶縁基板の表面を気密に覆い、該表面との間に放
電ガスが充填される放電空間を形成する蓋部材と、上記
絶縁基板の表面に微小放電間隙を隔てて対向するよう被
着形成される対のトリガ放電電極膜と、上記絶縁基板の
表面に主放電間隙を隔てて対向するよう被着形成され、
上記トリガ放電電極膜と電気的に接続される対の主放電
電極膜とを有してなり、上記トリガ放電電極膜は電圧非
直線抵抗体によって形成されるよう構成した。上記電圧
非直線抵抗体は、予め設定された所定の電圧値未満の電
圧が印加された場合には、その抵抗値が非常に高いため
電流を通さないが、上記所定の電圧値以上の電圧が印加
された時点で、その抵抗値が急激に低下して一気に大電
流を通す性質を有するものであり、上記所定の電圧値
(電流を通し始める電圧値)をクランプ電圧という。該
クランプ電圧は、例えば10V〜1000Vの範囲内で
設定される。また、上記電圧非直線抵抗体としては、例
えばZnOやSiC,TiO2,Fe2O3等を用いる。In order to achieve the above object, a discharge type surge absorbing element according to the present invention includes an insulating substrate and a surface of the insulating substrate which is hermetically covered with a discharge gas. And a pair of trigger discharge electrode films formed on the surface of the insulating substrate so as to face each other with a minute discharge gap, and a main discharge gap on the surface of the insulating substrate. Are formed so as to face each other with
It has a pair of main discharge electrode films electrically connected to the trigger discharge electrode film, and the trigger discharge electrode film is formed by a voltage non-linear resistor. When a voltage less than a preset predetermined voltage value is applied, the voltage non-linear resistor does not pass a current because its resistance value is very high. At the time of application, the resistance value suddenly decreases and a large current is passed at once. The above-mentioned predetermined voltage value (voltage value at which a current starts to flow) is called a clamp voltage. The clamp voltage is set within the range of 10V to 1000V, for example. Moreover, as the voltage nonlinear resistor, for example, ZnO, SiC, TiO 2 , Fe 2 O 3 or the like is used.
【0012】上記トリガ放電電極膜に過電流が連続して
流れた場合に、該過電流の通電によるトリガ放電電極膜
の発熱により、上記絶縁基板が砕裂するよう構成するの
が望ましい。具体的には、上記トリガ放電電極膜を形成
する電圧非直線抵抗体の放電時の抵抗値や電流量等を勘
案して、上記絶縁基板の厚さや材質等を適宜選定する
(すなわち、絶縁基板の割れ易さを調節する)ことによ
って実現される。なお、上記「過電流が連続して流れた
場合」という表現は、過電流が「一定時間流れた場合」
を意味するものであり、連続して流れる「過電流」に
は、直流電流のみならず、時間の経過とともに電流値が
変化する交流電流も当然に含まれるものである。以下に
おいても同様である。It is desirable that, when an overcurrent continuously flows through the trigger discharge electrode film, the insulating substrate is shattered due to heat generation of the trigger discharge electrode film due to passing of the overcurrent. Specifically, the thickness, the material, etc. of the insulating substrate are appropriately selected in consideration of the resistance value and the current amount at the time of discharging the voltage non-linear resistor forming the trigger discharge electrode film (that is, the insulating substrate). It is realized by adjusting the easiness of breaking. The expression "when the overcurrent flows continuously" means "when the overcurrent flows for a certain period of time".
The "overcurrent" that continuously flows naturally includes not only direct current but also alternating current whose current value changes with the passage of time. The same applies to the following.
【0013】[0013]
【作用】絶縁基板の表面に、微小放電間隙を隔てて対向
するトリガ放電電極膜と、主放電間隙を隔てて対向する
主放電電極膜とを被着形成するよう構成したので、放電
型サージ吸収素子の形状は全体的に偏平化し、小型化す
ることが容易となる。Since the trigger discharge electrode films facing each other across the minute discharge gap and the main discharge electrode films facing each other across the main discharge gap are deposited on the surface of the insulating substrate, discharge type surge absorption is achieved. The shape of the element is flattened as a whole, which facilitates miniaturization.
【0014】上記放電型サージ吸収素子に、上記主放電
電極膜と接続した外部端子を介して、トリガ放電電極膜
を構成する電圧非直線抵抗体のクランプ電圧以上のサー
ジが印加されると、この電圧非直線抵抗体の抵抗値が急
激に低下し、トリガ放電電極膜に電流が流れる。その結
果、微小放電間隙に電子が放出されてトリガ放電として
の沿面放電が発生する。ついで、この沿面放電は、電子
のプライミング効果によってグロー放電へと移行する。
そして、このグロー放電が主放電間隙へと転移し、主放
電たるアーク放電に移行してサージを吸収する。一方、
クランプ電圧未満の電圧が印加された場合には、電圧非
直線抵抗体の抵抗値は高いままであるため、トリガ放電
電極膜に電流が流れず、したがって沿面放電も生じな
い。When a surge higher than the clamp voltage of the voltage non-linear resistor constituting the trigger discharge electrode film is applied to the discharge type surge absorbing element through the external terminal connected to the main discharge electrode film, The resistance value of the voltage non-linear resistor sharply decreases, and a current flows through the trigger discharge electrode film. As a result, electrons are emitted into the minute discharge gap and a creeping discharge as a trigger discharge occurs. Then, this creeping discharge shifts to glow discharge by the priming effect of electrons.
Then, this glow discharge is transferred to the main discharge gap and transferred to arc discharge which is the main discharge to absorb the surge. on the other hand,
When a voltage lower than the clamp voltage is applied, the resistance value of the voltage non-linear resistor remains high, so that no current flows in the trigger discharge electrode film, and therefore creeping discharge does not occur.
【0015】このように、印加電圧値がクランプ電圧未
満の場合には、上記トリガ放電電極膜に電流は流れない
が、クランプ電圧に達した時点で大電流が一気に流れる
ため、確実に主放電間隙に転移し、主放電が開始され
る。このクランプ電圧のバラツキは極めて少ないため、
上記電圧非直線抵抗体のクランプ電圧を適宜調節するこ
とにより、主放電間隙に転移する電圧値(以下「主放電
の開始電圧」と称する)を安定的に設定できる。なお、
電圧非直線抵抗体自身にもサージ吸収作用があるため、
主放電が開始されるまでの間も、上記トリガ放電電極膜
を形成する対サージ応答性に優れた電圧非直線抵抗体に
よってサージの吸収が行われる。As described above, when the applied voltage value is less than the clamp voltage, no current flows through the trigger discharge electrode film, but a large current flows at once when the clamp voltage is reached, so that the main discharge gap is surely achieved. , And the main discharge is started. Since the variation of this clamp voltage is extremely small,
By appropriately adjusting the clamp voltage of the voltage non-linear resistor, the voltage value transferred to the main discharge gap (hereinafter referred to as "main discharge start voltage") can be stably set. In addition,
Since the voltage nonlinear resistor itself also has a surge absorbing effect,
Even before the main discharge is started, the surge is absorbed by the voltage non-linear resistor that forms the trigger discharge electrode film and is excellent in surge response.
【0016】電力線との接触事故や、このような事態を
想定した過電圧試験によって、上記放電型サージ吸収素
子の定格電圧以上の過電圧が連続して印加された場合に
は、上記微小放電間隙及び主放電間隙で放電が持続し、
この放電を通じて連続した過電流が流れることとなる。
この連続した過電流の通電によって上記トリガ放電電極
膜が発熱し、上記絶縁基板が熱歪みによって砕裂する。
この結果、放電空間内の放電ガスに空気が流入し、放電
が消失して過電流の通電が遮断されるので、上記放電型
サージ吸収素子の焼損を防止することができる。When an overvoltage exceeding the rated voltage of the discharge type surge absorbing element is continuously applied by an accident of contact with a power line or an overvoltage test assuming such a situation, the above-mentioned minute discharge gap and main Discharge continues in the discharge gap,
A continuous overcurrent flows through this discharge.
The continuous discharge of overcurrent causes the trigger discharge electrode film to generate heat, and the insulating substrate is fractured due to thermal strain.
As a result, air flows into the discharge gas in the discharge space, the discharge disappears, and the energization of the overcurrent is cut off, so that the above-mentioned discharge type surge absorbing element can be prevented from burning.
【0017】[0017]
【実施例】以下に本発明を、図示の実施例に基づいて説
明する。図1及び図1のA−A断面図である図2に示す
ように、本実施例に係る放電型サージ吸収素子2は、厚
さ0.4〜1.0mmのセラミック等からなる絶縁基板4
と、該絶縁基板4の表面6を覆う蓋部材8と、上記絶縁
基板4の表面6に幅10〜100μmの微小放電間隙10
を隔てて被着形成される1対のトリガ放電電極膜12,12
と、絶縁基板4の表面6に幅0.2〜10mmの主放電間
隙14を隔てて被着形成される1対の主放電電極膜16,16
とを有してなる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the illustrated embodiments. As shown in FIGS. 1 and 2 which is a cross-sectional view taken along the line AA of FIG. 1, the discharge type surge absorbing element 2 according to the present embodiment includes an insulating substrate 4 made of ceramic or the like having a thickness of 0.4 to 1.0 mm.
A lid member 8 for covering the surface 6 of the insulating substrate 4, and a minute discharge gap 10 having a width of 10 to 100 μm on the surface 6 of the insulating substrate 4.
A pair of trigger discharge electrode films 12 and 12 deposited and formed by separating
And a pair of main discharge electrode films 16, 16 formed on the surface 6 of the insulating substrate 4 with a main discharge gap 14 having a width of 0.2 to 10 mm.
And have.
【0018】上記トリガ放電電極膜12,12は、ZnO,
SiC,TiO2,Fe2O3 等の電圧非直線抵抗体によ
って形成される。また、上記主放電電極膜16,16は、M
o,LaB6,MoSi2,TiO2 等の、耐スパッタ性
を有する導電物質によって形成される。上記トリガ放電
電極膜12,12と主放電電極膜16,16とは、互いに電気的
に接続される。The trigger discharge electrode films 12, 12 are made of ZnO,
It is formed of a voltage nonlinear resistor such as SiC, TiO 2 , Fe 2 O 3 . In addition, the main discharge electrode films 16 and 16 are M
o, LaB 6 , MoSi 2 , TiO 2 or the like, which is formed of a conductive material having spatter resistance. The trigger discharge electrode films 12 and 12 and the main discharge electrode films 16 and 16 are electrically connected to each other.
【0019】なお、上記トリガ放電電極膜12,12の先端
部には、Mo,LaB6,MoSi2,TiO2 等によっ
て形成される、耐スパッタ性を有する導電性保護膜18,
18が形成されており、トリガ放電電極膜12,12のスパッ
タによる微小放電間隙10の絶縁劣化を防止し、寿命特性
の向上を図っている。さらに、トリガ放電電極膜12,12
の表面には、露出部における沿面放電を防止するため
に、非結晶化ガラス等からなる絶縁膜20,20が被覆され
ている。At the tips of the trigger discharge electrode films 12, 12, a conductive protective film 18, which is formed of Mo, LaB 6 , MoSi 2 , TiO 2 or the like and has spatter resistance, is formed.
18 is formed to prevent insulation deterioration of the minute discharge gap 10 due to sputtering of the trigger discharge electrode films 12 and 12 and to improve life characteristics. Furthermore, the trigger discharge electrode films 12, 12
The surface of the is covered with insulating films 20, 20 made of non-crystallized glass or the like in order to prevent creeping discharge in the exposed portion.
【0020】上記絶縁基板4の表面6から左右両側面2
2,22、さらに裏面24にかけては、Ag・PdやNi等
からなる1対の外部端子薄膜26,26が被着形成されてお
り、該外部端子薄膜26,26は、上記主放電電極膜16,16
と電気的に接続される。From the surface 6 of the insulating substrate 4 to the left and right side surfaces 2
A pair of external terminal thin films 26, 26 made of Ag / Pd, Ni, or the like is adhered and formed on the second and second surfaces 22, and further on the back surface 24. The external terminal thin films 26, 26 are formed on the main discharge electrode film 16 described above. , 16
Electrically connected to.
【0021】上記蓋部材8は、ガラスやセラミック等の
絶縁物質からなり、該蓋部材8の各側面28は3〜10mm
程度の高さを有している。該側面28と絶縁基板4の表面
6とを低融点ガラス等からなる封着材30によって固着す
ることにより、絶縁基板4の表面6と蓋部材8との間
に、上記側面28の高さに相応した高さを有する、気密の
放電空間32が形成される。該放電空間32内には、He,
Ne,Ar,Xe等の希ガスの単体もしくは混合物を主
体とする放電ガスが封入される。なお、上記のように側
面28を有する蓋部材8を用いる代わりに、平板状の蓋部
材を用い、絶縁基板4との間にスペーサー等を配して放
電空間32を形成するよう構成してもよい。The lid member 8 is made of an insulating material such as glass or ceramic, and each side surface 28 of the lid member 8 is 3 to 10 mm.
It has a certain height. By fixing the side surface 28 and the surface 6 of the insulating substrate 4 with the sealing material 30 made of low melting point glass or the like, the height of the side surface 28 is increased between the surface 6 of the insulating substrate 4 and the lid member 8. An airtight discharge space 32 having a corresponding height is formed. In the discharge space 32, He,
A discharge gas mainly containing a simple substance or a mixture of rare gases such as Ne, Ar, and Xe is filled. It should be noted that instead of using the lid member 8 having the side surface 28 as described above, a flat plate-shaped lid member may be used, and a spacer or the like may be arranged between the insulating substrate 4 and the lid member 8 to form the discharge space 32. Good.
【0022】上記放電型サージ吸収素子2は、上記トリ
ガ放電電極膜12,12に過電流が連続的に流れた場合に、
該過電流の通電によるトリガ放電電極膜12,12の発熱に
より、上記絶縁基板4が熱歪みによって砕裂するよう構
成される。具体的には、上記トリガ放電電極膜12,12を
形成する電圧非直線抵抗体の放電時の抵抗値や電流量に
基づく発熱量等を勘案して、上記絶縁基板4の厚さや材
質等を適宜選定する(すなわち、絶縁基板の割れ易さを
調節する)ことによって実現される。The above-mentioned discharge type surge absorbing element 2 has a structure in which an overcurrent continuously flows through the trigger discharge electrode films 12, 12.
The insulating substrate 4 is ruptured by thermal strain due to heat generation of the trigger discharge electrode films 12, 12 due to the application of the overcurrent. Specifically, the thickness, material, etc. of the insulating substrate 4 are set in consideration of the resistance value at the time of discharging the voltage non-linear resistor forming the trigger discharge electrode films 12, 12 and the heat generation amount based on the amount of current. It is realized by appropriately selecting (that is, adjusting the fragility of the insulating substrate).
【0023】しかして、上記構成を有する放電型サージ
吸収素子2を電子機器のプリント回路基板等に実装した
状態で、外部端子薄膜26,26を介して外部からトリガ放
電電極膜12,12を構成する電圧非直線抵抗体のクランプ
電圧以上のサージが印加されると、該電圧非直線抵抗体
の抵抗値が急激に低下し、トリガ放電電極膜12,12に大
きな電流が一気に流れる。その結果、微小放電間隙10に
電子が放出されてトリガ放電としての沿面放電が発生
し、この沿面放電は、電子のプライミング効果によって
グロー放電へと移行する。そして、このグロー放電は即
座に主放電間隙14へと転移し、主放電たるアーク放電に
移行してサージを吸収する。なお、主放電が開始するま
での間にも、上記トリガ放電電極膜12,12を構成する応
答性に優れた電圧非直線抵抗体自身がサージを吸収して
いるため、対サージ応答性が向上する。Thus, with the discharge type surge absorbing element 2 having the above structure mounted on a printed circuit board or the like of an electronic device, the trigger discharge electrode films 12 and 12 are formed from the outside through the external terminal thin films 26 and 26. When a surge that is equal to or higher than the clamp voltage of the voltage nonlinear resistor is applied, the resistance value of the voltage nonlinear resistor rapidly decreases, and a large current flows through the trigger discharge electrode films 12, 12 all at once. As a result, electrons are emitted into the minute discharge gap 10 to generate a creeping discharge as a trigger discharge, and this creeping discharge is converted into a glow discharge by the priming effect of electrons. Then, this glow discharge immediately transfers to the main discharge gap 14 and shifts to arc discharge which is the main discharge to absorb the surge. Even before the main discharge starts, the voltage non-linear resistor itself, which forms the trigger discharge electrode films 12 and 12 and has excellent responsiveness, absorbs the surge, so the responsiveness to surge is improved. To do.
【0024】電力線との接触事故や、このような事態を
想定した過電圧試験によって、放電型サージ吸収素子2
の定格電圧以上の過電圧が連続して印加された場合に
は、微小放電間隙10及び主放電間隙14で放電が持続し、
この放電を通じて連続した過電流が流れることとなる。
このような短絡状態となった場合には、連続した過電流
の通電によってトリガ放電電極膜12,12が発熱し、絶縁
基板4が熱歪みによって砕裂する。この結果、放電空間
32内の放電ガスに空気が流入して放電を消失させ、過電
流の通電を遮断する。The discharge type surge absorbing element 2 is tested by an accident with contact with a power line or an overvoltage test assuming such a situation.
When an overvoltage higher than the rated voltage of is continuously applied, the discharge continues in the minute discharge gap 10 and the main discharge gap 14,
A continuous overcurrent flows through this discharge.
In the case of such a short-circuited state, the trigger discharge electrode films 12 and 12 generate heat by continuous energization of overcurrent, and the insulating substrate 4 is shattered by thermal strain. As a result, the discharge space
Air flows into the discharge gas in 32 to extinguish the discharge and shut off the overcurrent.
【0025】なお、図示は省略したが、上記絶縁基板4
に切り込みや溝を形成することによって、その砕裂を容
易化することができる。あるいは、絶縁基板4の裏面22
における相対向する両側端縁に脚部を突設し、放電型サ
ージ吸収素子2を回路基板等に実装した際に、該脚部に
よって絶縁基板4の裏面22の中央部分が浮いた状態で支
持されるよう構成することもできる。この場合には、絶
縁基板4の砕裂が容易化するばかりでなく、砕裂した部
分が下方に陥没するので、通電路が寸断され、過電流の
通電をより確実に遮断できる。Although not shown, the insulating substrate 4 is not shown.
By forming a notch or a groove in the groove, the crushing can be facilitated. Alternatively, the back surface 22 of the insulating substrate 4
When the discharge type surge absorbing element 2 is mounted on a circuit board or the like by providing leg portions projecting at opposite side edges of the insulating substrate 4, the leg portions support the central portion of the back surface 22 of the insulating substrate 4 in a floating state. It can also be configured to. In this case, not only the crushing of the insulating substrate 4 is facilitated, but also the crushed portion is depressed downward, so that the current-carrying path is cut off and the overcurrent can be more surely cut off.
【0026】[0026]
【発明の効果】上記のように、本発明に係る放電型サー
ジ吸収素子は、絶縁基板と、該絶縁基板の表面を覆う蓋
部材と、上記絶縁基板の表面に被着形成されるトリガ放
電電極膜及び主放電電極膜とからなるよう構成したの
で、その外形を偏平化することができる。その結果、部
品収容スペースの少ない小型の機器内に収容することが
可能になる等、放電型サージ吸収素子の使用用途を拡大
し、その利用価値を高めることができる。As described above, the discharge type surge absorbing element according to the present invention has an insulating substrate, a cover member for covering the surface of the insulating substrate, and a trigger discharge electrode adhered to the surface of the insulating substrate. Since it is composed of the film and the main discharge electrode film, the outer shape can be flattened. As a result, the discharge-type surge absorbing element can be used in a wide range of applications, such as being able to be housed in a small device with a small space for housing parts, and its utility value can be increased.
【0027】トリガ放電電極膜を電圧非直線抵抗体によ
って構成したので、該電圧非直線抵抗体のクランプ電圧
によって主放電の開始電圧を規定できる。すなわち、ク
ランプ電圧以上のサージが印加された場合に、即座に通
電して主放電が確実に開始されるので、主放電の開始電
圧をクランプ電圧に基づいて安定的に設定できる。ま
た、主放電が開始するまでの間も、応答性に優れた電圧
非直線抵抗体自身がサージの吸収を行うので、対サージ
応答性が向上する。Since the trigger discharge electrode film is composed of the voltage nonlinear resistor, the starting voltage of the main discharge can be defined by the clamp voltage of the voltage nonlinear resistor. That is, when a surge equal to or higher than the clamp voltage is applied, the main discharge is immediately started to reliably start the main discharge, so that the start voltage of the main discharge can be stably set based on the clamp voltage. Further, the voltage non-linear resistor itself, which is excellent in responsiveness, absorbs the surge even before the main discharge starts, so that the responsiveness to surge is improved.
【0028】連続した過電流の通電によるトリガ放電電
極膜の発熱によって上記絶縁基板が砕裂するよう構成す
ることにより、電力線との接触事故や各種過電圧試験に
よって放電型サージ吸収素子の定格電圧以上の過電圧が
連続して印加された場合に、該過電圧による過電流によ
って上記トリガ放電電極膜が発熱し、上記絶縁基板が砕
裂される。その結果、放電空間内の放電ガスに空気が流
入し、これにより放電が消失して過電流の通電が遮断さ
れるので、放電型サージ吸収素子の消損を防止すること
ができる。Since the insulating substrate is crushed by the heat generation of the trigger discharge electrode film due to the continuous application of overcurrent, a contact accident with the power line or various overvoltage tests can prevent the voltage from exceeding the rated voltage of the discharge type surge absorbing element. When the overvoltage is continuously applied, the trigger discharge electrode film generates heat due to the overcurrent caused by the overvoltage, and the insulating substrate is shattered. As a result, air flows into the discharge gas in the discharge space, whereby the discharge disappears and the overcurrent is shut off, so that the discharge type surge absorbing element can be prevented from being extinguished.
【図1】本発明に係る放電型サージ吸収素子の1実施例
を示す分解斜視図である。FIG. 1 is an exploded perspective view showing one embodiment of a discharge type surge absorber according to the present invention.
【図2】図1のA−A断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図3】従来のサージ吸収素子の概略斜視図である。FIG. 3 is a schematic perspective view of a conventional surge absorbing element.
【図4】従来のサージ吸収素子の概略断面図である。FIG. 4 is a schematic sectional view of a conventional surge absorbing element.
2 放電型サージ吸収素子 4 絶縁基板 6 絶縁基板の表面 8 蓋部材 10 微小放電間隙 12 トリガ放電電極膜 14 主放電間隙 16 主放電電極膜 32 放電空間 2 Discharge type surge absorber 4 Insulating substrate 6 Surface of insulating substrate 8 Lid member 10 Micro discharge gap 12 Trigger discharge electrode film 14 Main discharge gap 16 Main discharge electrode film 32 Discharge space
Claims (2)
覆い、該表面との間に放電ガスが充填される放電空間を
形成する蓋部材と、上記絶縁基板の表面に微小放電間隙
を隔てて対向するよう被着形成される対のトリガ放電電
極膜と、上記絶縁基板の表面に主放電間隙を隔てて対向
するよう被着形成され、上記トリガ放電電極膜と電気的
に接続される対の主放電電極膜とを有してなり、上記ト
リガ放電電極膜は電圧非直線抵抗体によって形成される
ことを特徴とする放電型サージ吸収素子。1. An insulating substrate, a lid member that hermetically covers the surface of the insulating substrate and forms a discharge space filled with a discharge gas between the insulating substrate and a small discharge gap on the surface of the insulating substrate. A pair of trigger discharge electrode films formed so as to face each other with a space therebetween, and a pair of trigger discharge electrode films formed so as to face the surface of the insulating substrate so as to face each other with a main discharge gap therebetween, and electrically connected to the trigger discharge electrode film. A discharge type surge absorbing element comprising a pair of main discharge electrode films, wherein the trigger discharge electrode film is formed by a voltage non-linear resistor.
が流れた場合に、該過電流の通電によるトリガ放電電極
膜の発熱により、上記絶縁基板が砕裂するよう構成した
ことを特徴とする、請求項1に記載の放電型サージ吸収
素子。2. The insulating substrate is configured to be ruptured due to heat generation of the trigger discharge electrode film due to energization of the overcurrent when a continuous overcurrent flows through the trigger discharge electrode film. The discharge type surge absorbing element according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3280517A JP2594853B2 (en) | 1991-09-30 | 1991-09-30 | Discharge type surge absorbing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3280517A JP2594853B2 (en) | 1991-09-30 | 1991-09-30 | Discharge type surge absorbing element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0594861A true JPH0594861A (en) | 1993-04-16 |
| JP2594853B2 JP2594853B2 (en) | 1997-03-26 |
Family
ID=17626208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3280517A Expired - Fee Related JP2594853B2 (en) | 1991-09-30 | 1991-09-30 | Discharge type surge absorbing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2594853B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014024730A1 (en) * | 2012-08-09 | 2014-02-13 | 立山科学工業株式会社 | Electrostatic protection element and method for manufacturing same |
| US8779466B2 (en) | 2008-11-26 | 2014-07-15 | Murata Manufacturing Co., Ltd. | ESD protection device and method for manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120063U (en) * | 1979-02-19 | 1980-08-25 | ||
| JPS5998488A (en) * | 1982-11-29 | 1984-06-06 | 日本電信電話株式会社 | Gas-filled arrester tube |
| JPS61227387A (en) * | 1985-04-01 | 1986-10-09 | 興亜電工株式会社 | Surge absorption element and manufacture thereof |
| JPH01124983A (en) * | 1987-11-09 | 1989-05-17 | Okaya Electric Ind Co Ltd | Surge absorbing element |
| JP3062483U (en) * | 1999-03-25 | 1999-10-08 | 須田 能充 | Antenna with synthetic color emission |
-
1991
- 1991-09-30 JP JP3280517A patent/JP2594853B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120063U (en) * | 1979-02-19 | 1980-08-25 | ||
| JPS5998488A (en) * | 1982-11-29 | 1984-06-06 | 日本電信電話株式会社 | Gas-filled arrester tube |
| JPS61227387A (en) * | 1985-04-01 | 1986-10-09 | 興亜電工株式会社 | Surge absorption element and manufacture thereof |
| JPH01124983A (en) * | 1987-11-09 | 1989-05-17 | Okaya Electric Ind Co Ltd | Surge absorbing element |
| JP3062483U (en) * | 1999-03-25 | 1999-10-08 | 須田 能充 | Antenna with synthetic color emission |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8779466B2 (en) | 2008-11-26 | 2014-07-15 | Murata Manufacturing Co., Ltd. | ESD protection device and method for manufacturing the same |
| WO2014024730A1 (en) * | 2012-08-09 | 2014-02-13 | 立山科学工業株式会社 | Electrostatic protection element and method for manufacturing same |
| US20150223369A1 (en) * | 2012-08-09 | 2015-08-06 | Tateyama Kagaku Industry Co., Ltd. | Electrostatic protection element and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2594853B2 (en) | 1997-03-26 |
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