JPH0597509A - Nonreducble dielectric porcelain composition - Google Patents
Nonreducble dielectric porcelain compositionInfo
- Publication number
- JPH0597509A JPH0597509A JP3289093A JP28909391A JPH0597509A JP H0597509 A JPH0597509 A JP H0597509A JP 3289093 A JP3289093 A JP 3289093A JP 28909391 A JP28909391 A JP 28909391A JP H0597509 A JPH0597509 A JP H0597509A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- dielectric
- composition
- dielectric constant
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 30
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 13
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract 2
- 239000000919 ceramic Substances 0.000 claims description 9
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 abstract 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 abstract 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010953 base metal Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は非還元性誘電体磁器組
成物に関し、特にたとえば、ニッケルなどの卑金属を内
部電極材料とする積層コンデンサなどの誘電体材料とし
て用いられる、非還元性誘電体磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-reducing dielectric porcelain composition, and in particular, a non-reducing dielectric porcelain used as a dielectric material such as a laminated capacitor having a base metal such as nickel as an internal electrode material. It relates to a composition.
【０００２】[0002]
【従来の技術】従来の誘電体磁器材料は、中性または還
元性の低酸素分圧下で焼成すると、還元され、半導体化
を起こすという性質を有していた。そのため、内部電極
材料としては、誘電体磁器材料の焼結する温度で溶融せ
ず、かつ誘電体磁器材料を半導体化させない高い酸素分
圧下で焼成しても酸化されない、たとえばＰｄ，Ｐｔな
どの貴金属を用いなければならなかった。これは、製造
される積層コンデンサの低コスト化の大きな妨げとなっ
ていた。2. Description of the Related Art Conventional dielectric porcelain materials have the property that when they are fired under a neutral or reducing low oxygen partial pressure, they are reduced to become semiconductors. Therefore, the internal electrode material is not melted at a temperature at which the dielectric ceramic material is sintered, and is not oxidized even if fired under a high oxygen partial pressure that does not turn the dielectric ceramic material into a semiconductor, for example, a noble metal such as Pd or Pt. Had to use. This has been a major hindrance to cost reduction of manufactured multilayer capacitors.
【０００３】そこで、上述の問題点を解決するために、
たとえばＮｉなどの卑金属を内部電極の材料として使用
することが望まれていた。しかし、このような卑金属を
内部電極の材料として使用して、従来の条件で焼成する
と、電極材料が酸化してしまい、電極としての機能を果
たさない。そのため、このような卑金属を内部電極の材
料として使用するためには、酸素分圧の低い中性または
還元性の雰囲気において焼成しても半導体化せず、コン
デンサ用の誘電体材料として、十分な比抵抗と優れた誘
電特性とを有する誘電体磁器材料が必要とされていた。
これらの条件をみたす誘電体磁器材料として、たとえば
特開昭６２−２５６４２２号のＢａＴｉＯ3 −ＣａＺｒ
Ｏ3 −ＭｎＯ−ＭｇＯ系の組成や、特公昭６１−１４６
１１号のＢａＴｉＯ3 −（Ｍｇ，Ｚｎ，Ｓｒ，Ｃａ）Ｏ
−Ｂ2 Ｏ3 −ＳｉＯ2 系の組成が提案されてきた。Therefore, in order to solve the above problems,
For example, it has been desired to use a base metal such as Ni as a material for the internal electrodes. However, when such a base metal is used as a material for the internal electrode and fired under the conventional conditions, the electrode material is oxidized and does not function as an electrode. Therefore, in order to use such a base metal as a material for the internal electrode, even if it is fired in a neutral or reducing atmosphere with a low oxygen partial pressure, it does not become a semiconductor, and is sufficiently used as a dielectric material for a capacitor. There has been a need for a dielectric porcelain material having a specific resistance and excellent dielectric properties.
As a dielectric ceramic material satisfying these conditions, for example, BaTiO 3 —CaZr disclosed in JP-A-62-256422.
O 3 -MnO-MgO system composition or, JP 61-146
No. 11 BaTiO 3 — (Mg, Zn, Sr, Ca) O
Compositions based on the —B 2 O 3 —SiO 2 system have been proposed.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、特開昭
６２−２５６４２２号に開示されている非還元性誘電体
磁器組成物では、ＣａＺｒＯ3 や焼成過程で生成するＣ
ａＴｉＯ3 がＭｎなどとともに二次相を生成しやすいた
め、高温における信頼性の低下につながる危険性があっ
た。However, in the non-reducing dielectric ceramic composition disclosed in Japanese Unexamined Patent Publication No. 62-256422, CaZrO 3 and C generated in the firing process are used.
Since aTiO 3 easily forms a secondary phase together with Mn and the like, there is a risk of reducing reliability at high temperatures.
【０００５】また、特公昭６１−１４６１１号に開示さ
れている組成物は、得られる誘電体の誘電率が２０００
〜２８００であり、Ｐｄなどの貴金属を使用している従
来からの磁器組成物の誘電率である３０００〜３５００
と比較すると劣っていた。したがって、この組成物をコ
ストダウンのために、そのまま従来の材料と置き換える
のは、コンデンサの小型大容量化という点で不利であ
り、問題が残されていた。The composition disclosed in JP-B-61-14611 has a dielectric constant of 2000.
˜2800, which is the dielectric constant of a conventional porcelain composition using a noble metal such as Pd 3000 to 3500
It was inferior compared to. Therefore, replacing the composition with the conventional material as it is for cost reduction is disadvantageous in terms of miniaturization and large capacity of the capacitor, and a problem remains.
【０００６】さらに、この組成物の誘電率の温度変化率
（ＴＣＣ）は、２０℃の容量値を基準として、−２５℃
から＋８５℃の温度範囲では±１０％であるが、＋８５
℃を超える高温では、１０％を大きく超えてしまい、Ｅ
ＩＡに規定されているＸ７Ｒ特性をも大きくはずれてし
まうという欠点があった。Further, the temperature change rate (TCC) of the dielectric constant of this composition is -25 ° C with reference to the capacitance value of 20 ° C.
Is ± 10% in the temperature range from + 85 ° C to + 85 ° C
At a high temperature exceeding ℃, it will greatly exceed 10%, and E
There is a drawback that the X7R characteristic defined by IA is also largely deviated.
【０００７】それゆえに、この発明の主たる目的は、誘
電率が３０００以上、絶縁抵抗がｌｏｇＩＲで１１．０
以上であり、さらに誘電率の温度特性が、２５℃の容量
値を基準として、−５５℃〜１２５℃の広い範囲にわた
って±１５％の範囲内にあることを満足し、低酸素分圧
下であっても、組織が半導体化せず焼成可能である、非
還元性誘電体磁器組成物を提供することである。Therefore, the main object of the present invention is to have a dielectric constant of 3000 or more and an insulation resistance of 11.0 in log IR.
It is satisfied that the temperature characteristic of the dielectric constant is within ± 15% over a wide range of −55 ° C. to 125 ° C. with respect to the capacitance value of 25 ° C., and the oxygen partial pressure is low. Even so, it is an object of the present invention to provide a non-reducing dielectric ceramic composition whose structure does not become a semiconductor and can be fired.
【０００８】[0008]
【課題を解決するための手段】この発明は、不純物とし
て含まれるアルカリ金属酸化物の含有量が０．０４重量
％以下のＢａＴｉＯ3 と、Ｔｂ2 Ｏ3 ，Ｄｙ2 Ｏ3 ，Ｈ
ｏ2 Ｏ3 ，Ｅｒ2 Ｏ3 の中から選ばれる少なくとも１種
類の希土類酸化物（Ｒｅ2 Ｏ3 ）と、Ｃｏ2 Ｏ3 との配
合比が、ＢａＴｉＯ3 ８８．０〜９９．４モル％と、
Ｒｅ2 Ｏ3 ０．３〜６．０モル％と、Ｃｏ2 Ｏ3
０．３〜６．０モル％との範囲内にある主成分１００モ
ル％に対し、副成分として、ＢａＯ ０．２〜４．０モ
ル％と、ＭｎＯ ０．２〜３．０モル％と、ＳｉＯ2
０．２〜５．０モル％とを含有する、非還元性誘電体磁
器組成物である。さらに、上記組成物に、副成分とし
て、Ｙ2 Ｏ3 を３．０モル％以下含有してもよい。The present invention is directed to BaTiO 3 containing 0.04% by weight or less of an alkali metal oxide contained as an impurity, Tb 2 O 3 , Dy 2 O 3 and H.
The compounding ratio of at least one rare earth oxide (Re 2 O 3 ) selected from o 2 O 3 and Er 2 O 3 and Co 2 O 3 is BaTiO 3 88.0 to 99.4 mol%. When,
Re 2 O 3 and 0.3 to 6.0 mol%, Co 2 O 3
0.2 to 4.0 mol% of BaO and 0.2 to 3.0 mol% of MnO as secondary components with respect to 100 mol% of the main component within the range of 0.3 to 6.0 mol%. , SiO 2
It is a non-reducing dielectric ceramic composition containing 0.2 to 5.0 mol%. Furthermore, the composition may contain Y 2 O 3 as an accessory component in an amount of 3.0 mol% or less.
【０００９】[0009]
【発明の効果】この発明にかかる非還元性誘電体磁器組
成物は、中性または還元性の雰囲気において１２６０〜
１３００℃の温度で焼成しても、組織が還元されて半導
体化することがない。さらに、この非還元性誘電体磁器
組成物によって得られる磁器は、ｌｏｇＩＲで１１．０
以上の高い絶縁抵抗値を示すとともに、３０００以上の
高誘電率を示し、容量温度変化率もＥＩＡに規定されて
いるＸ７Ｒ特性を満足する。The non-reducing dielectric ceramic composition according to the present invention is 1260 to 1260 in a neutral or reducing atmosphere.
Even if it is fired at a temperature of 1300 ° C., the structure is not reduced to become a semiconductor. Furthermore, the porcelain obtained by this non-reducing dielectric porcelain composition has a log IR of 11.0.
In addition to exhibiting the above-mentioned high insulation resistance value, it exhibits a high dielectric constant of 3000 or more, and the rate of change in capacitance temperature also satisfies the X7R characteristic defined by EIA.
【００１０】したがって、この発明にかかる非還元性誘
電体磁器組成物を積層セラミックコンデンサの誘電体材
料として用いれば、内部電極材料としてＮｉなどで代表
される卑金属材料を用いることができる。そのため、従
来のＰｄなどの貴金属を用いたものに比べて、特性を落
とすことなく、大幅なコストダウンを行うことが可能と
なる。Therefore, if the non-reducing dielectric ceramic composition according to the present invention is used as a dielectric material of a laminated ceramic capacitor, a base metal material represented by Ni or the like can be used as an internal electrode material. Therefore, compared with the conventional one using a noble metal such as Pd, it is possible to significantly reduce the cost without deteriorating the characteristics.
【００１１】この発明の上述の目的，その他の目的，特
徴および利点は、以下の実施例の詳細な説明から一層明
らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below.
【００１２】[0012]
【実施例】出発原料として、不純物として含まれるアル
カリ金属酸化物の含有量が異なるＢａＴｉＯ3 ，Ｂａ／
Ｔｉモル比補正のためのＢａＣＯ3 ，希土類酸化物，Ｃ
ｏ2 Ｏ3 ，ＭｎＯ，ＳｉＯ2 ，Ｙ2 Ｏ3 を準備した。こ
れらの原料を表１に示す組成割合となるように秤量し
て、秤量物を得た。なお、試料番号１〜２９について
は、アルカリ金属酸化物の含有量が０．０３重量％のＢ
ａＴｉＯ3 を使用し、試料番号３０については、アルカ
リ金属酸化物の含有量が０．０５重量％のＢａＴｉＯ3
を使用し、試料番号３１については、アルカリ金属酸化
物の含有量が０．０７重量％のＢａＴｉＯ3 を使用し
た。Example As starting materials, BaTiO 3 , Ba / Ba / having different contents of alkali metal oxides contained as impurities
BaCO 3 , rare earth oxide, C for correcting Ti molar ratio
o 2 O 3 , MnO, SiO 2 and Y 2 O 3 were prepared. These raw materials were weighed so that the composition ratios shown in Table 1 were obtained to obtain a weighed product. For sample numbers 1 to 29, the content of the alkali metal oxide was 0.03% by weight of B.
aTiO 3 was used, and for sample No. 30, BaTiO 3 containing 0.05% by weight of the alkali metal oxide was used.
For Sample No. 31, BaTiO 3 having an alkali metal oxide content of 0.07% by weight was used.
【００１３】[0013]
【表１】 [Table 1]
【００１４】得られた秤量物に酢酸ビニル系バインダを
５重量％添加した後、ＰＳＺボールを用いたボールミル
で十分に湿式混合した。次に、この混合物中の分散媒を
蒸発、乾燥した後、整粒の工程を経て粉末を得た。得ら
れた粉末を２ｔｏｎ／ｃｍ2 の圧力で、直径１０ｍｍ、
厚さ１ｍｍの円板状にプレス成形して、成形体を得た。After adding 5% by weight of a vinyl acetate binder to the obtained weighed product, it was sufficiently wet-mixed by a ball mill using PSZ balls. Next, the dispersion medium in this mixture was evaporated and dried, and then a powder was obtained through a step of sizing. The obtained powder was treated at a pressure of 2 ton / cm 2 with a diameter of 10 mm,
A 1 mm thick disc was press-molded to obtain a molded body.
【００１５】次いで、このようにして得られた成形体
を、空気中において４００℃で３時間保持の条件で脱バ
インダを行った後、Ｈ2 ／Ｎ2 の体積比率が３／１００
の還元雰囲気ガス気流中において、表２に示す温度で２
時間焼成し、磁器を得た。Next, the molded body thus obtained was debindered in air at 400 ° C. for 3 hours, and then the H 2 / N 2 volume ratio was 3/100.
2 in the reducing atmosphere gas flow at the temperature shown in Table 2.
It was fired for an hour to obtain porcelain.
【００１６】[0016]
【表２】 [Table 2]
【００１７】得られた磁器の両面に、銀ペーストを塗布
して、焼き付けることにより、銀電極を形成してコンデ
ンサとした。そして、このコンデンサの室温における誘
電率ε，誘電損失ｔａｎδ，絶縁抵抗値（ｌｏｇＩＲ）
および容量の温度変化率（ＴＣＣ）を測定した。その結
果を表２に示す。Silver paste was applied to both surfaces of the obtained porcelain and baked to form silver electrodes, thereby forming a capacitor. Then, the dielectric constant ε, the dielectric loss tan δ, the insulation resistance value (logIR) of this capacitor at room temperature.
And the rate of temperature change of capacity (TCC) were measured. The results are shown in Table 2.
【００１８】なお、誘電率ε，誘電損失ｔａｎδについ
ては、温度２５℃、周波数１ｋＨｚ、交流電圧１Ｖの条
件で測定した。また、絶縁抵抗値については、温度２５
℃において直流電圧５００Ｖを２分間印加して測定し、
その結果を対数値（ｌｏｇＩＲ）で示す。さらに、温度
変化率（ＴＣＣ）については、２５℃の容量値を基準と
した時の−５５℃，１２５℃における変化率（ΔＣ-55
／Ｃ25，ΔＣ+125／Ｃ25）および−５５℃〜＋１２５℃
の間において、容量温度変化率が最大である値の絶対
値、いわゆる最大変化率（｜ΔＣ／Ｃ25｜max ）につい
て示す。The dielectric constant ε and the dielectric loss tan δ were measured under the conditions of a temperature of 25 ° C., a frequency of 1 kHz and an AC voltage of 1V. Also, regarding the insulation resistance value, the temperature is 25
Apply a DC voltage of 500V for 2 minutes at
The results are shown by logarithmic value (logIR). Furthermore, regarding the temperature change rate (TCC), the change rate (ΔC −55
/ C 25 , ΔC +125 / C 25 ) and -55 ° C to + 125 ° C
In between, the absolute value of the value at which the capacity temperature change rate is maximum, that is, the maximum change rate (| ΔC / C 25 | max ) is shown.
【００１９】この発明において主成分および副成分の範
囲を上述のように限定する理由は次の通りである。The reason why the ranges of the main component and the subcomponents are limited as described above in the present invention is as follows.
【００２０】まず、主成分の範囲の限定理由について説
明する。主成分であるＢａＴｉＯ3 の構成比率を８８．
０〜９９．４モル％とするのは、構成比率が８８．０モ
ル％未満の場合には、希土類元素およびＣｏ2 Ｏ3 の構
成比率が多くなるため、試料番号５に示すように、絶縁
抵抗値および誘電率の低下が生じ好ましくない。また、
ＢａＴｉＯ3 の構成比率が９９．４モル％を超える場合
には、希土類元素およびＣｏ2 Ｏ3 の添加の効果がな
く、試料番号３に示すように、高温部（キュリー点付
近）の容量温度変化率が大きく（＋）側にはずれて好ま
しくない。さらに、ＢａＴｉＯ3 中のアルカリ金属酸化
物含有量を０．０４％以下とするのは、０．０４％を超
えると、試料番号３０および３１に示すように、誘電率
の低下が生じ、実用的でなくなり好ましくない。First, the reason for limiting the range of the main component will be described. The composition ratio of BaTiO 3 as the main component is 88.
The content of 0-99.4 mol% means that when the composition ratio is less than 88.0 mol%, the composition ratios of the rare earth element and Co 2 O 3 increase, so that as shown in Sample No. 5, insulation It is not preferable because the resistance value and the dielectric constant decrease. Also,
When the composition ratio of BaTiO 3 exceeds 99.4 mol%, the effect of the addition of the rare earth element and Co 2 O 3 has no effect, and as shown in Sample No. 3, the capacity-temperature change in the high temperature part (around the Curie point) The rate is large and it shifts to the (+) side, which is not preferable. Further, the content of the alkali metal oxide in BaTiO 3 is set to 0.04% or less. When it exceeds 0.04%, the dielectric constant is lowered as shown in Sample Nos. 30 and 31, and it is practical. It is not preferable.
【００２１】次に、副成分の範囲の限定理由について説
明する。ＢａＯ添加量を０．２〜４．０モル％とするの
は、添加量が０．２モル％未満の場合には、試料番号１
１に示すように、雰囲気焼成中に組織が半導体化し、絶
縁抵抗値の著しい低下をまねくので好ましくない。ま
た、添加量が４．０モル％を超える場合には、試料番号
１４に示すように、焼結性が低下するので好ましくな
い。Next, the reasons for limiting the range of subcomponents will be described. The BaO addition amount is set to 0.2 to 4.0 mol% when the addition amount is less than 0.2 mol%.
As shown in FIG. 1, the structure becomes a semiconductor during firing in the atmosphere, which causes a remarkable decrease in insulation resistance, which is not preferable. On the other hand, if the addition amount exceeds 4.0 mol%, the sinterability is lowered as shown in sample No. 14, which is not preferable.
【００２２】また、ＭｎＯ添加量を０．２〜３．０モル
％とするのは、添加量が０．２モル％未満の場合には、
試料番号１９に示すように、組織の耐還元性向上に効果
がなくなり、絶縁抵抗値の著しい低下をまねくので好ま
しくない。また、添加量が３．０モル％を超える場合に
は、試料番号１７に示すように、絶縁抵抗値の低下が生
じるので好ましくない。Further, the MnO addition amount is set to 0.2 to 3.0 mol% if the addition amount is less than 0.2 mol%.
As shown in Sample No. 19, it is not preferable because the effect of improving the reduction resistance of the structure is lost and the insulation resistance value is remarkably lowered. On the other hand, if the amount added exceeds 3.0 mol%, the insulation resistance value will decrease as shown in Sample No. 17, which is not preferable.
【００２３】ＳｉＯ2 添加量を０．２〜５．０モル％と
するのは、添加量が０．２モル％未満の場合には、試料
番号２１に示すように、焼結温度の低下に効果がないの
で好ましくない。また、添加量が５．０モル％を超える
場合には、試料番号２５に示すように、誘電率の低下が
生じるため好ましくない。The amount of SiO 2 added is set to 0.2 to 5.0 mol%, because when the amount added is less than 0.2 mol%, the sintering temperature is lowered as shown in sample No. 21. It is not preferable because it has no effect. On the other hand, if the addition amount exceeds 5.0 mol%, as shown in Sample No. 25, the dielectric constant lowers, which is not preferable.
【００２４】最後に、Ｙ2 Ｏ3 の添加量を３．０モル％
以下とするのは、添加量が３．０モル％ょ超えると、試
料番号２９に示すように、焼結性が著しく低下するため
好ましくない。Finally, the amount of Y 2 O 3 added was 3.0 mol%.
It is not preferable to set the content below if the addition amount exceeds 3.0 mol%, as shown in Sample No. 29, the sinterability is significantly lowered.
【００２５】それに対して、この発明にかかる非還元性
誘電体磁器組成物は、中性または還元性の雰囲気におい
て１２６０〜１３００℃の温度で焼成しても、組織が還
元されて半導体化することがない。さらに、この非還元
性誘電体磁器組成物によって得られる磁器は、ｌｏｇＩ
Ｒで１１．０以上の高い絶縁抵抗値を示すとともに、３
０００以上の高誘電率を示し、容量温度変化率もＥＩＡ
に規定されているＸ７Ｒ特性を満足する。On the other hand, the non-reducing dielectric ceramic composition according to the present invention is such that even if it is fired at a temperature of 1260 to 1300 ° C. in a neutral or reducing atmosphere, its structure is reduced to become a semiconductor. There is no. Furthermore, the porcelain obtained by this non-reducing dielectric porcelain composition has a log I
R shows a high insulation resistance value of 11.0 or more and 3
Shows a high dielectric constant of 000 or more, and the capacitance temperature change rate is
Satisfies the X7R characteristics specified in.
【００２６】なお、表２に示す特性データは、単板コン
デンサにおいて得られたデータであるが、同じ組成物を
シート成形し、チップ加工を行った積層コンデンサにお
いても、今回のデータとほぼ同等の結果が得られる。し
たがって、この発明にかかる非還元性誘電体磁器組成物
を積層セラミックコンデンサの誘電体材料として用いれ
ば、内部電極材料としてＮｉなどで代表される卑金属材
料を用いることができる。そのため、従来のＰｄなどの
貴金属を用いたものに比べて、特性を落とすことなく、
大幅なコストダウンを行うことが可能となる。The characteristic data shown in Table 2 are the data obtained for the single plate capacitor, but even for the laminated capacitor in which the same composition was sheet-formed and chip-processed, it was almost the same as the present data. The result is obtained. Therefore, when the non-reducing dielectric ceramic composition according to the present invention is used as a dielectric material of a laminated ceramic capacitor, a base metal material represented by Ni or the like can be used as an internal electrode material. Therefore, compared with the conventional one using a noble metal such as Pd, the characteristics are not deteriorated,
It is possible to significantly reduce costs.
Claims (2)
物の含有量が０．０４重量％以下のＢａＴｉＯ3 と、Ｔ
ｂ2 Ｏ3 ，Ｄｙ2 Ｏ3 ，Ｈｏ2 Ｏ3 ，Ｅｒ2 Ｏ3 の中か
ら選ばれる少なくとも１種類の希土類酸化物（Ｒｅ2 Ｏ
3 ）と、Ｃｏ2 Ｏ3 との配合比が、 ＢａＴｉＯ3 ８８．０〜９９．４モル％、 Ｒｅ2 Ｏ3 ０．３〜６．０モル％、および Ｃｏ2 Ｏ3 ０．３〜６．０モル％ の範囲内にある主成分１００モル％に対し、 副成分として、 ＢａＯ ０．２〜４．０モル％、 ＭｎＯ ０．２〜３．０モル％、および ＳｉＯ2 ０．２〜５．０モル％ を含有する、非還元性誘電体磁器組成物。1. BaTiO 3 having an alkali metal oxide content of 0.04% by weight or less as an impurity and T
b 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , and Er 2 O 3 , at least one rare earth oxide (Re 2 O 3)
And 3) blending ratio of Co 2 O 3 is, BaTiO 3 88.0-99.4 mol%, Re 2 O 3 0.3 to 6.0 mol%, and Co 2 O 3 0.3 to 6 As a subcomponent, BaO 0.2 to 4.0 mol%, MnO 0.2 to 3.0 mol%, and SiO 2 0.2 to 100 mol% of the main component within the range of 0.0 mol%. A non-reducing dielectric ceramic composition containing 5.0 mol%.
０モル％以下含有する、請求項１に記載の非還元性誘電
体磁器組成物。2. Further, as an accessory component, Y 2 O 3 is added to 3.
The non-reducing dielectric ceramic composition according to claim 1, containing 0 mol% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03289093A JP3120500B2 (en) | 1991-10-07 | 1991-10-07 | Non-reducing dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03289093A JP3120500B2 (en) | 1991-10-07 | 1991-10-07 | Non-reducing dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0597509A true JPH0597509A (en) | 1993-04-20 |
| JP3120500B2 JP3120500B2 (en) | 2000-12-25 |
Family
ID=17738715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03289093A Expired - Lifetime JP3120500B2 (en) | 1991-10-07 | 1991-10-07 | Non-reducing dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3120500B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809052B2 (en) | 2002-01-15 | 2004-10-26 | Tdk Corporation | Dielectric ceramic composition and electronic device |
| JP2008088053A (en) * | 2002-01-15 | 2008-04-17 | Tdk Corp | Dielectric ceramic composition and electronic device |
-
1991
- 1991-10-07 JP JP03289093A patent/JP3120500B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809052B2 (en) | 2002-01-15 | 2004-10-26 | Tdk Corporation | Dielectric ceramic composition and electronic device |
| JP2008088053A (en) * | 2002-01-15 | 2008-04-17 | Tdk Corp | Dielectric ceramic composition and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3120500B2 (en) | 2000-12-25 |
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