JPH06100320A - Production of optical device - Google Patents
Production of optical deviceInfo
- Publication number
- JPH06100320A JPH06100320A JP24751992A JP24751992A JPH06100320A JP H06100320 A JPH06100320 A JP H06100320A JP 24751992 A JP24751992 A JP 24751992A JP 24751992 A JP24751992 A JP 24751992A JP H06100320 A JPH06100320 A JP H06100320A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass substrate
- core
- optical device
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000011521 glass Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract description 19
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002019 doping agent Substances 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 206010021143 Hypoxia Diseases 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/31—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with germanium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12169—Annealing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガラス基板上に、光導
波用のコア膜を設けるとともに、このコア膜を覆ってク
ラッド膜を形成する光デバイスの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical device in which a core film for optical waveguide is provided on a glass substrate and a clad film is formed so as to cover the core film.
【０００２】[0002]
【従来の技術】一般に、光合波器、光分波器、光分岐器
等においては、ガラス基板上に光導波用のコア膜を設け
るとともに、このコア膜を覆ってクラッド膜を形成して
なる光デバイスが使用されることがある。2. Description of the Related Art Generally, in an optical multiplexer, an optical demultiplexer, an optical branching device, etc., a core film for optical waveguide is provided on a glass substrate, and a cladding film is formed so as to cover the core film. Optical devices may be used.
【０００３】このような光デバイスを製造するために
は、従来より、スパッタリング法や電子ビーム蒸着法等
のＰＶＤ技術を用いる方法がある。In order to manufacture such an optical device, conventionally, there is a method using a PVD technique such as a sputtering method or an electron beam evaporation method.
【０００４】たとえば、スパッタリング法を用いる場合
には、まず、ＳiＯ2を主成分として屈折率を高めるため
のＧeＯ2やＴiＯ2等のドーパントを含む原料をターゲッ
トとし、このターゲットをスパッタリング法によってガ
ラス基板上に蒸着させることにより、ガラス基板上にコ
ア膜を形成する。For example, in the case of using the sputtering method, first, a raw material containing SiO 2 as a main component and a dopant such as GeO 2 or TiO 2 for increasing the refractive index is used as a target, and this target is subjected to the sputtering method on a glass substrate. A core film is formed on the glass substrate by vapor deposition on the glass substrate.
【０００５】次に、フォトエッチング技術によって、光
導波路となるべき部分以外のコア膜の不要部分を除く。
続いて、上記のコア膜を作成する場合と同様に、ガラス
基板と同じ成分をもつ原料をターゲットとしてスパッタ
リング法によってガラス基板上にクラッド膜を形成す
る。これにより、ガラス基板上において光導波用のコア
膜がクラッド膜で覆われてなる光デバイスが作成され
る。次に、この光デバイスを各チップに切断して製品と
する。Next, the unnecessary portion of the core film other than the portion to be the optical waveguide is removed by the photo-etching technique.
Then, similarly to the case of forming the core film, a cladding film is formed on the glass substrate by a sputtering method using a raw material having the same components as the glass substrate as a target. As a result, an optical device is produced in which the core film for optical waveguide is covered with the cladding film on the glass substrate. Next, the optical device is cut into each chip to obtain a product.
【０００６】[0006]
【発明が解決しようとする課題】ところで、上記のよう
に、スパッタリング法等のＰＶＤ技術によってクラッド
膜cを形成する際には、ガラス基板a上には、既に光導波
用のコア膜がエッチングされて段差が生じているが、こ
のような段差があると、クラッドガラス膜となるべきタ
ーゲットを蒸着させる際に、その段差部分が蒸着し難く
(いわゆる段差被覆性が悪く)、微細な空孔ができるなど
の不整合が生じ、製品品質を低下させる。By the way, as described above, when the cladding film c is formed by the PVD technique such as the sputtering method, the core film for optical waveguide is already etched on the glass substrate a. There is a level difference, but if there is such a level difference, it is difficult for the level difference part to be vapor-deposited when the target to be the cladding glass film is vapor-deposited.
(The so-called step coverage is poor), and inconsistencies such as the formation of fine voids occur, which deteriorates the product quality.
【０００７】また、ＰＶＤによるクラッド膜の製作時に
おいては、ターゲットをエッチングして飛散させるの
で、その際、飛散したターゲットの主成分であるＳiＯ2
中の酸素が奪われて、いわゆる酸素欠損が起こる。そし
て、酸素欠損を生じたＳiＯx(ただし、x＜２)がガラス
基板上に蒸着されることになるため、その結果として生
じるクラッド膜は、所期の屈折率の値と一致しなくな
る。このように、クラッド膜の屈折率がガラス基板の屈
折率と一致しない場合には、光の伝播モードが変化する
などの問題を生じる。When the PVD clad film is manufactured, the target is etched and scattered, so that the main component of the scattered target is SiO 2.
Oxygen inside is deprived and so-called oxygen deficiency occurs. Then, since oxygen-deficient SiOx (where x <2) is vapor-deposited on the glass substrate, the resulting cladding film does not match the desired refractive index value. As described above, when the refractive index of the clad film does not match the refractive index of the glass substrate, there arises a problem that the propagation mode of light changes.
【０００８】本発明は、上述の課題を解決するためにな
されたものであって、ガラス基板上に光導波用のコア膜
を覆ってクラッド膜を形成する際の段差被覆性を改善す
るとともに、酸素欠損の影響を除きガラス基板との屈折
率差の小さいクラッド膜が形成されるようにすることを
課題とする。The present invention has been made to solve the above problems, and improves the step coverage when forming a cladding film on a glass substrate to cover a core film for optical waveguide, and An object of the present invention is to form a clad film having a small difference in refractive index from the glass substrate, excluding the effect of oxygen deficiency.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記の課題を
解決するため、ガラス基板上に、光導波用のコア膜を設
けるとともに、このコア膜を覆ってクラッド膜を形成す
る光デバイスの製造方法において、クラッド膜をＣＶＤ
法によって形成し、このクラッド膜の形成後に、酸素を
含む雰囲気中でこのクラッド膜に対して焼鈍処理を施す
ことを特徴としている。In order to solve the above problems, the present invention provides an optical device in which a core film for optical waveguide is provided on a glass substrate and a cladding film is formed to cover the core film. In the manufacturing method, the cladding film is CVD
It is characterized in that it is formed by a method, and after the cladding film is formed, the cladding film is annealed in an atmosphere containing oxygen.
【００１０】[0010]
【作用】ＣＶＤの場合には、反応ガスの供給によってガ
ラス基板の表面上でクラッド膜が生成するので、段差被
覆性が改善されるとともに、クラッド膜の形成後に焼鈍
処理を施すことにより、酸素欠損によるＳiＯx(x＜２)
は酸化されてＳiＯ2となり、屈折率がガラス基板と略同
一となる。同時に、段差被覆性がさらに一層改善され
る。In the case of CVD, since the clad film is formed on the surface of the glass substrate by the supply of the reaction gas, the step coverage is improved, and at the same time, the annealing treatment is performed after the clad film is formed, so that the oxygen deficiency is caused. Due to SiOx (x <2)
Is oxidized to SiO 2 and has a refractive index substantially the same as that of the glass substrate. At the same time, the step coverage is further improved.
【００１１】[0011]
【実施例】図１は本発明の実施例に係る光デバイスの製
造方法を工程順に示す説明図である。FIG. 1 is an explanatory view showing a method of manufacturing an optical device according to an embodiment of the present invention step by step.
【００１２】図１に基づいて、本発明に係る光デバイス
の製造方法について説明する。A method of manufacturing an optical device according to the present invention will be described with reference to FIG.
【００１３】まず、ＳiＯ2を主成分として屈折率を高め
るためのＧeＯ2やＴiＯ2等のドーパントを含む原料をタ
ーゲットとし、このターゲットをスパッタリング法によ
ってガラス基板上に蒸着させることにより、ガラス基板
a上にコア膜bを均一に形成する(ステップ)。First, a raw material containing a dopant such as GeO 2 or TiO 2 for mainly increasing the refractive index of SiO 2 as a target is used as a target, and this target is vapor-deposited on the glass substrate by a sputtering method.
The core film b is uniformly formed on the a (step).
【００１４】次に、ガラス基板a上に均一にコア膜bが形
成されたものに対して焼鈍処理を施す(ステップ)。こ
の焼鈍処理の条件としては、酸素を含む雰囲気(たとえ
ば大気中)で行う必要があり、また、温度は６００℃〜
１３００℃の範囲が適当である。その理由は、焼鈍温度
が６００℃以下では酸素欠損の回復が不十分となり、ま
た、１３００℃以上では蒸着されたコア膜bが微細な亀
裂を生じて剥離が生じるからである。Next, an annealing treatment is applied to the glass substrate a on which the core film b is uniformly formed (step). As the conditions of this annealing treatment, it is necessary to perform it in an atmosphere containing oxygen (for example, in the air), and the temperature is 600 ° C to
A range of 1300 ° C is suitable. The reason is that recovery of oxygen vacancies becomes insufficient when the annealing temperature is 600 ° C. or lower, and peeling occurs when the vapor-deposited core film b produces fine cracks at 1300 ° C. or higher.
【００１５】この焼鈍処理によって、コア膜b中で酸素
欠損のためにＳiＯx(x＜２)となっているものは酸化さ
れてＳiＯ2となり、屈折率が所期の値に回復され、コア
膜bの屈折率がガラス基板aのそれよりも若干高くなる。By this annealing treatment, the SiOx (x <2) in the core film b due to oxygen deficiency is oxidized to SiO 2 and the refractive index is restored to the desired value. The refractive index of b is slightly higher than that of the glass substrate a.
【００１６】次に、フォトエッチング技術によって、光
導波用として形成すべき部分以外の不要なコア膜bの部
分を除く(ステップ)。Next, the unnecessary portion of the core film b other than the portion to be formed for optical waveguide is removed by photoetching technique (step).
【００１７】続いて、ガラス基板aと同じ成分をもつ原
料をターゲットとしてＣＶＤ法によってガラス基板上a
にクラッド膜cを均一に形成する(ステップ)。この場
合の混合ガスとしては、ＳiＣl4＋Ｏ2＋Ａrを用い、Ｓi
Ｃl4とＯ2とを反応させてＳiＯ2をクラッド膜cとしてガ
ラス基板a上に生成させる。ＳiＣl4は水素を含まないの
で安全であるとともに、伝送損失も改善される効果があ
る。しかも、ＣＶＤの場合には、ガス供給によってガラ
ス基板aの表面上でクラッド膜cが生成するので、クラッ
ド膜cはコア膜bの段差の影響を受けることなく均一に堆
積する。このため、段差被覆性が改善される。また、Ｃ
ＶＤの際のガラス基板aの温度は、５７０±２０℃に設
定するのが好ましい。この温度範囲であればガラス基板
aと堆積されるクラッド膜cとの比屈折率差(＝{(Ｎf−Ｎ
b)／Ｎb}×１００％、Ｎbはガラス基板aの屈折率、Ｎf
はクラッド膜cの屈折率)は±０.１％の範囲内となる
が、上記の温度範囲から外れると比屈折率差が大きくな
ってしまい製品特性が悪くなる。Then, by using a raw material having the same components as the glass substrate a as a target, a glass substrate a
The clad film c is uniformly formed on the substrate (step). In this case, SiCl 4 + O 2 + Ar is used as the mixed gas, and SiCl 4 + O 2 + Ar is used.
Cl 4 and O 2 are reacted to produce SiO 2 as a clad film c on the glass substrate a. Since SiCl 4 does not contain hydrogen, it is safe and has an effect of improving transmission loss. Moreover, in the case of CVD, since the cladding film c is generated on the surface of the glass substrate a by the gas supply, the cladding film c is uniformly deposited without being affected by the step of the core film b. Therefore, the step coverage is improved. Also, C
The temperature of the glass substrate a during VD is preferably set to 570 ± 20 ° C. Glass substrate in this temperature range
The relative refractive index difference (= {(Nf-N
b) / Nb} × 100%, Nb is the refractive index of the glass substrate a, Nf
Is within the range of ± 0.1%. However, if the temperature deviates from the above temperature range, the relative refractive index difference becomes large and the product characteristics deteriorate.
【００１８】引き続いて、このクラッド膜cが生成され
たものに対してステップと同じ条件の下で焼鈍処理を
施す(ステップ)。この焼鈍処理により、酸素欠損によ
りＳiＯx(x＜２)となっているものは酸化されて正常な
ＳiＯ2となる。Subsequently, an annealing treatment is performed on the produced clad film c under the same conditions as the step (step). By this annealing treatment, those having SiOx (x <2) due to oxygen deficiency are oxidized and become normal SiO 2 .
【００１９】これにより、ガラス基板a上において、光
導波用のコア膜bを覆ってクラッド膜cが形成されてなる
光デバイスが製作される。As a result, an optical device is produced in which the cladding film c is formed on the glass substrate a so as to cover the optical waveguide core film b.
【００２０】最後に、この光デバイスを各チップに切断
して最終製品とする。Finally, the optical device is cut into each chip to obtain a final product.
【００２１】ＣＶＤ法によって製作する上記の光デバイ
スについて、ＣＶＤ時のガラス基板aの温度がガラス基
板aとクラッド膜cとの比屈折率差に及ぼす影響について
調べた測定結果を表１に示す。Table 1 shows the measurement results of the effect of the temperature of the glass substrate a during CVD on the relative refractive index difference between the glass substrate a and the clad film c in the above optical device manufactured by the CVD method.
【００２２】[0022]
【表１】 [Table 1]
【００２３】なお、この光デバイスについてのクラッド
膜cの生成条件としては、プラズマ発生用に周波数１３.
５６ＭＨzの高周波電源を用い、原料としてＳiＣl4＋Ｏ
2＋Ａrの混合ガスを使用して行った。As a condition for forming the clad film c in this optical device, a frequency of 13.
Using a high frequency power source of 56MHz, as a raw material SiCl 4 + O
It was carried out using a mixed gas of 2 + Ar.
【００２４】表１の結果から明らかなように、クラッド
膜cの堆積時のガラス基板aの温度によって、ガラス基板
aとクラッド膜cとの間の比屈折率差が変化するが、５６
８℃で生成したものは、比屈折率差が−０.０２％と極
めて小さくなることが理解される。As is clear from the results shown in Table 1, the temperature of the glass substrate a at the time of depositing the cladding film c depends on the glass substrate a.
Although the relative refractive index difference between a and the cladding film c changes,
It is understood that the product produced at 8 ° C. has a very small difference in relative refractive index of −0.02%.
【００２５】[0025]
【発明の効果】本発明によれば、ガラス基板上のコア膜
を覆うクラッド膜をＣＶＤ法によって形成し、このクラ
ッド膜の形成後に、酸素を含む雰囲気中でこのクラッド
膜に対して焼鈍処理を施すので、ガラス基板上に光導波
用のコア膜を覆ってクラッド膜を形成する際の段差被覆
性が改善されるとともに、酸素欠損の影響を除きガラス
基板との屈折率差の小さいクラッド膜が形成されるよう
になる。このため、品質の優れた光デバイスの製作が可
能となる。According to the present invention, a clad film covering a core film on a glass substrate is formed by a CVD method, and after the clad film is formed, the clad film is annealed in an atmosphere containing oxygen. As a result, the step coverage when forming the clad film over the optical waveguide core film on the glass substrate is improved, and the clad film having a small difference in refractive index from the glass substrate is removed except for the effect of oxygen deficiency. Will be formed. Therefore, it is possible to manufacture an optical device with excellent quality.
【図１】本発明の実施例に係る光デバイスの製造方法を
工程順に示す説明図である。FIG. 1 is an explanatory diagram showing a method of manufacturing an optical device according to an embodiment of the present invention in process order.
a…ガラス基板、b…コアガラス膜、c…クラッドガラス
膜。a ... glass substrate, b ... core glass film, c ... clad glass film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 御前 俊和 兵庫県伊丹市池尻４丁目３番地 三菱電線 工業株式会社伊丹製作所内 (72)発明者 田中 紘幸 兵庫県伊丹市池尻４丁目３番地 三菱電線 工業株式会社伊丹製作所内 (72)発明者 四ツ谷 雅實 兵庫県伊丹市池尻４丁目３番地 三菱電線 工業株式会社伊丹製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshikazu Gozen 4-3 Ikejiri, Itami City, Hyogo Prefecture Mitsubishi Cable Industries, Ltd. Itami Works (72) Inventor Hiroyuki Tanaka 4-3 Ikejiri, Itami City, Hyogo Mitsubishi Cable Industries Itami Manufacturing Co., Ltd. (72) Inventor, Masami Yotsuya 4-3 Ikejiri, Itami City, Hyogo Prefecture Mitsubishi Cable Industries Itami Manufacturing Co., Ltd.
Claims (1)
けるとともに、このコア膜を覆ってクラッド膜を形成す
る光デバイスの製造方法において、 前記クラッド膜をＣＶＤ法によって形成し、このクラッ
ド膜の形成後に、酸素を含む雰囲気中でこのクラッド膜
に対して焼鈍処理を施すことを特徴とする光デバイスの
製造方法。1. A method of manufacturing an optical device in which a core film for optical waveguide is provided on a glass substrate and a clad film is formed so as to cover the core film, wherein the clad film is formed by a CVD method, and the clad film is formed. After the film is formed, an annealing process is applied to the clad film in an atmosphere containing oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24751992A JPH06100320A (en) | 1992-09-17 | 1992-09-17 | Production of optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24751992A JPH06100320A (en) | 1992-09-17 | 1992-09-17 | Production of optical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06100320A true JPH06100320A (en) | 1994-04-12 |
Family
ID=17164698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24751992A Pending JPH06100320A (en) | 1992-09-17 | 1992-09-17 | Production of optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06100320A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810454A1 (en) * | 1996-05-24 | 1997-12-03 | Fujikura Ltd. | Optical Waveguide filter and production process thereof |
-
1992
- 1992-09-17 JP JP24751992A patent/JPH06100320A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810454A1 (en) * | 1996-05-24 | 1997-12-03 | Fujikura Ltd. | Optical Waveguide filter and production process thereof |
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