JPH06102401A - Method of forming antireflection film - Google Patents

Method of forming antireflection film

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Publication number
JPH06102401A
JPH06102401A JP4252452A JP25245292A JPH06102401A JP H06102401 A JPH06102401 A JP H06102401A JP 4252452 A JP4252452 A JP 4252452A JP 25245292 A JP25245292 A JP 25245292A JP H06102401 A JPH06102401 A JP H06102401A
Authority
JP
Japan
Prior art keywords
antireflection film
film
forming
mgf
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4252452A
Other languages
Japanese (ja)
Inventor
Kenji Maruyama
賢治 丸山
Toshiaki Ogura
敏明 小倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4252452A priority Critical patent/JPH06102401A/en
Publication of JPH06102401A publication Critical patent/JPH06102401A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 本発明は光学部品などに使用される反射防止
膜の形成方法に関するもので、フッ化マグネシウム(M
gF2)膜が、従来のような基板加熱なしで高い密着
性,耐久性の得、さらにクラック発生の防止効果を持つ
ことを提供することを目的とする。 【構成】 光学部品の表面にフッ化マグネシウム(Mg
2)からなる反射防止膜を形成する構造を特ち、その
形成方法が、基板となる光学部品は無加熱のまま蒸着部
分に電子線照射を行いながらMgF2の蒸着膜を形成す
ることを特徴とする反射防止膜の形成方法。
(57) [Summary] [Object] The present invention relates to a method for forming an antireflection film for use in optical parts and the like.
It is an object of the present invention to provide a gF 2 ) film which has high adhesion and durability without the conventional substrate heating and has an effect of preventing crack generation. [Configuration] Magnesium fluoride (Mg
It has a structure of forming an antireflection film made of F 2 ), and its forming method is to form an MgF 2 evaporated film while irradiating an electron beam to the evaporated part while the optical component serving as the substrate is not heated. A method for forming a characteristic antireflection film.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光学部品などに使用さ
れる反射防止膜等の薄膜の形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film such as an antireflection film used for optical parts.

【0002】[0002]

【従来の技術】従来、MgF2は可視光から近赤外まで
の領域で透明であり、可視領域において低い屈折率を持
ち、また蒸着も容易に行えることから光学薄膜、特に反
射防止膜として有用に使用されている光学材料の1つで
ある。またMgF2は真空中で基板の温度を300〜4
00℃と高くしておいて蒸着するホットコーティング法
を用いることによりMgF2膜を硬化し耐久性を持たせ
ていた。以下ガラス基板にMgF2の単層反射防止膜を
例に用いて、図面を参照しながら従来のMgF2の反射
防止膜とその形成方法について説明する。
2. Description of the Related Art Conventionally, MgF 2 is transparent in the visible to near-infrared region, has a low refractive index in the visible region, and can be easily deposited, so that it is useful as an optical thin film, particularly as an antireflection film. Is one of the optical materials used in. In addition, MgF 2 has a substrate temperature of 300 to 4 in vacuum.
The MgF 2 film was hardened and made durable by using a hot coating method in which vapor deposition was performed at a high temperature of 00 ° C. A conventional MgF 2 antireflection film and a method for forming the same will be described below with reference to the drawings, using an MgF 2 single-layer antireflection film as an example.

【0003】図4はガラス基板8の表面にMgF2の反
射防止膜7をnd=λ0/4(nd:光学的厚み,λ0
反射防止波長域の中心波長)で形成したときの断面図で
ある。MgF2の反射防止膜7は通常真空蒸着法によっ
て形成されるが、その様子を図3に示す。真空に保った
真空蒸着槽1の内にある蒸発源2と基板ホルダ3にそれ
ぞれMgF2と基板を用意する。ここで基板側を室温
(無加熱)のままで蒸着したMgF2膜は柔らかく傷つ
き易い。これを避けるため、ヒータ5により基板を約3
00〜400℃に加熱したまま蒸着をおこなう。この方
法により、強く傷つきにくいMgF2膜を得ていた。
[0003] Figure 4 anti-reflection film 7 of MgF 2 on the surface of the glass substrate 8 nd = λ 0/4 ( nd: optical thickness, lambda 0:
It is sectional drawing when it forms in the center wavelength of an antireflection wavelength range. The antireflection film 7 of MgF 2 is usually formed by a vacuum vapor deposition method, which is shown in FIG. MgF 2 and a substrate are prepared in an evaporation source 2 and a substrate holder 3 in a vacuum deposition tank 1 kept in a vacuum, respectively. Here, the MgF 2 film deposited on the substrate side at room temperature (without heating) is soft and easily scratched. To avoid this, use heater 5
Vapor deposition is performed while heating at 00 to 400 ° C. By this method, a MgF 2 film which is strong and hardly scratched was obtained.

【0004】しかしながら、レンズなどの光学部品には
今まで無機ガラスが多く使用されてきたが、近年、軽量
で加工が容易であり、かつ量産性にすぐれているプラス
チックが光学部品として用いられるようになってきた。
これにあわせて最近ではプラスチック基板表面の反射防
止膜の密着性や耐久性を向上させるために、プラスチッ
ク基板を60℃〜80℃に加熱して真空蒸着する方法
や、RFイオンプレーティングする方法を用いて反射防
止膜を形成する方法が行われている。また、イオン源で
生成した不活性ガスイオンを数百〜数kVに加速し、形
成されつつある被膜に照射することにより(以下イオン
ビームアシストと記す)、被膜の内部応力の緩和,密着
力の向上などの効果を得る方法も提言されている。
However, although inorganic glass has been often used for optical components such as lenses, in recent years, plastics, which are lightweight, easy to process, and excellent in mass productivity, are used as optical components. It's coming.
Along with this, recently, in order to improve the adhesion and durability of the antireflection film on the surface of the plastic substrate, a method of heating the plastic substrate to 60 ° C. to 80 ° C. for vacuum deposition and a method of RF ion plating have been used. A method of forming an antireflection film using the same has been performed. Further, by accelerating the inert gas ions generated by the ion source to several hundreds to several kV and irradiating the film being formed (hereinafter referred to as ion beam assist), relaxation of internal stress of the film and adhesion A method of obtaining effects such as improvement is also proposed.

【0005】[0005]

【発明が解決しようとする課題】プラスチック基板を使
用した場合、上記した従来のガラス基板を用いたフッ化
マグネシウムからなる反射防止膜を真空蒸着法で形成す
る方法では、プラスチックの流動温度、熱変形温度が低
く、またプラスチック内部からの放出ガスの問題もある
ために、ガラス基板に蒸着膜を形成する際に行う基板加
熱(300℃〜400℃)が不可能で、強固な蒸着膜を
得ることができず、60℃〜80℃以下の低温でプラス
チック基材に反射防止膜の形成をを行うため膜の密着性
が悪く、耐久性も低いものであった。また上記のように
プラスチック基板を60℃〜80℃に加熱したり、RF
イオンプレーティング方法を用いて形成した反射防止膜
はクラックが生じやすく、また形成時の条件を一定に
し、かつプラスチック表面を一定に保つことは困難であ
り、量産に適するものではない。さらにイオンビームア
シストの方法でもMgF2がマグネシウムとフッ素に分
解し、フッ素はガスとして散逸し、できた膜はマグネシ
ウムが多量に含まれたものとなる。その結果、非常に吸
収の多い膜となり光学薄膜としての用をなさなくなると
いう欠点を有している。
When a plastic substrate is used, the conventional method for forming an antireflection film made of magnesium fluoride using a glass substrate by the vacuum deposition method is not suitable for the plastic flow temperature and thermal deformation. Since the temperature is low and there is a problem of gas released from the inside of plastic, it is impossible to heat the substrate (300 ° C to 400 ° C) when forming a vapor deposition film on a glass substrate, and to obtain a strong vapor deposition film. However, since the antireflection film is formed on the plastic substrate at a low temperature of 60 ° C. to 80 ° C. or less, the adhesion of the film is poor and the durability is low. Also, as described above, the plastic substrate is heated to 60 ° C to 80 ° C, or the RF
The antireflection film formed by using the ion plating method is apt to be cracked, and it is difficult to keep the conditions of formation constant and to keep the plastic surface constant, which is not suitable for mass production. Furthermore, even with the ion beam assisted method, MgF 2 is decomposed into magnesium and fluorine, the fluorine is dissipated as a gas, and the formed film contains a large amount of magnesium. As a result, it has a drawback that it becomes a film having a large amount of absorption and cannot be used as an optical thin film.

【0006】そこで本発明は上記問題点に鑑み、強く傷
つきにくく、クラックの発生を抑え、密着力を向上する
MgF2膜の形成方法を提供しようとするものである。
In view of the above problems, the present invention has an object of providing a method of forming an MgF 2 film which is strongly scratch-resistant, suppresses the occurrence of cracks, and improves the adhesion.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに本発明では、反射防止膜の形成方法として光学材料
の表面にMgF2からなる蒸着膜を真空蒸着により任意
の厚さに蒸着,形成する際、その膜に電子線照射をおこ
なう製造工程を備えたものである。
In order to achieve the above object, the present invention provides a method of forming an antireflection film by depositing a vapor deposition film of MgF 2 on the surface of an optical material by vacuum vapor deposition to an arbitrary thickness. It is provided with a manufacturing process in which the film is irradiated with an electron beam when it is formed.

【0008】[0008]

【作用】本発明は上記した構成および形成方法によって
反射防止膜であるMgF2膜が耐久性を維持しつつ、同
時に内部応力の緩和によりクラックの発生を抑え、密着
力を向上することになる。
According to the present invention, the MgF 2 film, which is an antireflection film, maintains the durability by the above-described structure and forming method, and at the same time, the occurrence of cracks is suppressed by relaxing the internal stress and the adhesion is improved.

【0009】[0009]

【実施例】以下本発明の実施例の反射防止膜とその形成
方法について図面を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An antireflection film according to an embodiment of the present invention and a method for forming the same will be described below with reference to the drawings.

【0010】図2は本発明の実施例の反射防止膜の断面
図である。構造としては従来のものと変わりはないが、
本実施例では基板はプラスチックである。
FIG. 2 is a sectional view of an antireflection film according to an embodiment of the present invention. Although the structure is the same as the conventional one,
In this example, the substrate is plastic.

【0011】図1で反射防止膜の形成時の様子を示す。
MgF2膜の形成条件は次の通りである。真空蒸着糟1
の内部を2.0×10-5Torrまで排気した後、基板
ホルダ3に取り付けた無加熱のガラス基板に対し電子銃
4により電子線を照射しつつ、蒸発源2より蒸発してく
るMgF2をガラス基板上に光学的膜厚nd=λ0/4
(λ0=520nm)に蒸着速度約8〜11Å/sec
で形成した。
FIG. 1 shows how the antireflection film is formed.
The conditions for forming the MgF 2 film are as follows. Vacuum deposition container 1
After exhausting the inside of the chamber to 2.0 × 10 -5 Torr, the unheated glass substrate mounted on the substrate holder 3 is irradiated with an electron beam by the electron gun 4 and evaporated from the evaporation source 2 MgF 2 optical and on a glass substrate film thickness nd = λ 0/4
At (λ 0 = 520 nm), the vapor deposition rate is about 8 to 11Å / sec.
Formed by.

【0012】形成中のMgF2に電子線を照射すること
により、基板を加熱しながら蒸着したときに得られる蒸
着膜の硬化による耐久性の向上の効果が得られる。また
イオンビームアシストと同様、内部応力の緩和が行われ
クラックの発生を抑え、密着力を向上させる効果があ
る。しかし、イオンビームアシストの欠点であったMg
2を分解するというようなことはない。
By irradiating the MgF 2 being formed with an electron beam, the effect of improving durability can be obtained by hardening the vapor deposition film obtained when vapor deposition is performed while heating the substrate. Further, similar to the ion beam assist, the internal stress is relaxed, the generation of cracks is suppressed, and the adhesion is improved. However, the drawback of ion beam assist was Mg.
There is no such thing as decomposing F 2 .

【0013】上記実施例の反射防止膜の密着性,耐久性
を確認するために行った試験は、(1)粘着テープ剥離
試験(温度40℃,相対湿度85%の高温・高湿雰囲気
中に1000時間放置した後、粘着テープを光学部品表
面に密着し、引きはがす。)、(2)耐湿試験(温度4
0℃,相対湿度95%の高温・高湿雰囲気中に1000
時間放置)(3)熱衝撃試験(温度−40℃,120℃
の低温・高温雰囲気中に交互に30分間ずつ放置を約1
00時間)。
The tests carried out to confirm the adhesion and durability of the antireflection film of the above-mentioned examples were as follows: (1) Adhesive tape peeling test (temperature 40 ° C., relative humidity 85% in high temperature and high humidity atmosphere) After being left for 1000 hours, the adhesive tape is brought into close contact with the surface of the optical component and peeled off.), (2) Moisture resistance test (temperature 4
1000 in a high temperature and high humidity atmosphere at 0 ° C and 95% relative humidity
(3) Thermal shock test (Temperature -40 ℃, 120 ℃)
Leave it in the low and high temperature atmosphere for 30 minutes alternately for about 1
00 hours).

【0014】[0014]

【表1】 [Table 1]

【0015】(表1)から分かるように本実施例の反射
防止膜は、密着性,耐久性に優れている。さらに従来は
反射防止膜形成時にクラックの発生が見られるものもあ
ったが、本実施例においては常時安定していた。
As can be seen from Table 1, the antireflection film of this example has excellent adhesion and durability. Further, conventionally, cracks were observed in some cases when the antireflection film was formed, but in this example, it was always stable.

【0016】[0016]

【発明の効果】以上の説明から明らかなように、本発明
の光学部品の反射防止膜は、光学材料の表面にMgF2
からなる蒸着膜を真空蒸着により任意の厚さに蒸着,形
成する際、その膜に電子線照射をおこなうもので、基板
加熱無しに高い耐久性を得ることができ、クラックの発
生の防止、また密着力の向上も可能である。
As is apparent from the above description, the antireflection film of the optical component of the present invention has MgF 2 on the surface of the optical material.
When a vapor-deposited film made of is vapor-deposited and formed to a desired thickness by electron beam irradiation, the film can be highly durable without heating the substrate, and cracks can be prevented. It is also possible to improve adhesion.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例による蒸着方法を説明する図FIG. 1 is a diagram illustrating a vapor deposition method according to an embodiment of the present invention.

【図2】本発明の実施例の光学部品と反射防止膜の断面
FIG. 2 is a sectional view of an optical component and an antireflection film according to an embodiment of the present invention.

【図3】従来の蒸着方法を説明する図FIG. 3 is a diagram illustrating a conventional vapor deposition method.

【図4】従来の光学部品と反射防止膜の断面図FIG. 4 is a sectional view of a conventional optical component and an antireflection film.

【符号の説明】[Explanation of symbols]

1 真空蒸着槽 2 蒸発源 3 基板ホルダ 4 電子銃 5 ヒータ 6 プラスチック基板 7 フッ化マグネシウム(MgF2)膜 8 ガラス基板1 Vacuum Deposition Tank 2 Evaporation Source 3 Substrate Holder 4 Electron Gun 5 Heater 6 Plastic Substrate 7 Magnesium Fluoride (MgF 2 ) Film 8 Glass Substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】光学部品基板の表面にフッ化マグネシウム
(MgF2)からなる反射防止膜を形成するにあたり、
前記光学部品基板の表面に電子線照射を行いつつMgF
2の蒸着を行う反射防止膜の形成方法。
1. When forming an antireflection film made of magnesium fluoride (MgF 2 ) on the surface of an optical component substrate,
While irradiating the surface of the optical component substrate with an electron beam, MgF
2. A method for forming an antireflection film for vapor deposition of 2 .
【請求項2】MgF2の薄膜を形成する際に、蒸着され
る側の光学部品基板は特に加熱することなく100℃以
下に保ったままMgF2の蒸着を行う請求項1記載の反
射防止膜の形成方法。
In forming the wherein the MgF 2 film, optic substrate on which is deposited antireflection film according to claim 1, wherein the particular performing remains MgF 2 deposition was maintained at 100 ° C. or less without heating Forming method.
JP4252452A 1992-09-22 1992-09-22 Method of forming antireflection film Pending JPH06102401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4252452A JPH06102401A (en) 1992-09-22 1992-09-22 Method of forming antireflection film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4252452A JPH06102401A (en) 1992-09-22 1992-09-22 Method of forming antireflection film

Publications (1)

Publication Number Publication Date
JPH06102401A true JPH06102401A (en) 1994-04-15

Family

ID=17237582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4252452A Pending JPH06102401A (en) 1992-09-22 1992-09-22 Method of forming antireflection film

Country Status (1)

Country Link
JP (1) JPH06102401A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804255A (en) * 1993-08-02 1998-09-08 Agency Of Industrial Science And Technology Method of forming transparent and conductive ultrathin films
WO2015097898A1 (en) * 2013-12-27 2015-07-02 株式会社シンクロン Process for forming multilayer antireflection film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804255A (en) * 1993-08-02 1998-09-08 Agency Of Industrial Science And Technology Method of forming transparent and conductive ultrathin films
WO2015097898A1 (en) * 2013-12-27 2015-07-02 株式会社シンクロン Process for forming multilayer antireflection film

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