JPH06107772A - Epoxy resin composition - Google Patents

Epoxy resin composition

Info

Publication number
JPH06107772A
JPH06107772A JP25851392A JP25851392A JPH06107772A JP H06107772 A JPH06107772 A JP H06107772A JP 25851392 A JP25851392 A JP 25851392A JP 25851392 A JP25851392 A JP 25851392A JP H06107772 A JPH06107772 A JP H06107772A
Authority
JP
Japan
Prior art keywords
epoxy resin
curing agent
formula
weight
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25851392A
Other languages
Japanese (ja)
Inventor
Hiroshi Fujita
浩史 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP25851392A priority Critical patent/JPH06107772A/en
Publication of JPH06107772A publication Critical patent/JPH06107772A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide the subject composition containing a specific epoxy resin, a curing agent, an inorganic filler and a cure accelerator as essential components and having excellent soldering stress resistance in the surface mounting of semiconductor devices. CONSTITUTION:The objective composition contains (A) 30-100wt.% (preferably 50-100wt.%) of an epoxy resin of formula I (R1 to R8 are H, halogen or alkyl) based on the total epoxy compound, (B) 30-100wt.% (preferably 50-100wt.%) of a naphthol resin curing agent of formula II ((n) is 0-3) based on the total curing agent, (C) preferably 70-90wt.% of an inorganic filler and (D) a cure accelerator such as diazabicycloundecene as essential components.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体デバイスの表面
実装化における耐半田ストレス性に優れた半導体封止用
エポキシ樹脂組成物に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which is excellent in resistance to solder stress in surface mounting semiconductor devices.

【0002】[0002]

【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品を熱硬化性樹脂で封止しているが、特
に集積回路では耐熱性、耐湿性に優れたO−クレゾール
ノボラックエポキシ樹脂をノボラック型フェノール樹脂
で硬化させたエポキシ樹脂が用いられている。ところが
近年、集積回路の高集積化に伴いチップがだんだん大型
化し、かつパッケージは従来のDIPタイプから表面実
装化された小型、薄型のフラットパッケージ、SOP、
SOJ、PLCCに変わってきている。即ち大型チップ
を小型で薄いパッケージに封入することになり、応力に
よりクラック発生、これらのクラックによる耐湿性の低
下等の問題が大きくクローズアップされてきている。特
に半田付けの工程において急激に200℃以上の高温に
さらされることによりパッケージの割れや樹脂とチップ
の剥離により耐湿性が劣化してしまうといった問題点が
でてきている。これらの大型チップを封止するに適し
た、信頼性の高い封止用樹脂組成物の開発が望まれてき
ている。これらの問題を解決するためにエポキシ樹脂と
して下記式(1)で示されるエポキシ樹脂の使用(特開
昭64−65116号公報)が検討されてきた。
2. Description of the Related Art Conventionally, electronic parts such as diodes, transistors and integrated circuits have been sealed with a thermosetting resin. Especially in integrated circuits, O-cresol novolac epoxy resin which is excellent in heat resistance and moisture resistance is used as a novolak. An epoxy resin cured with a type phenolic resin is used. However, in recent years, as the integration of integrated circuits has become higher, the size of the chip has gradually increased, and the package is a small and thin flat package surface-mounted from the conventional DIP type, SOP,
It has changed to SOJ and PLCC. That is, a large chip is enclosed in a small and thin package, and problems such as cracks caused by stress and deterioration of moisture resistance due to these cracks have been greatly highlighted. In particular, when exposed to a high temperature of 200 ° C. or more in the soldering process, moisture resistance is deteriorated due to cracking of the package and peeling of the resin and the chip. It has been desired to develop a highly reliable encapsulating resin composition suitable for encapsulating these large chips. In order to solve these problems, use of an epoxy resin represented by the following formula (1) as an epoxy resin (Japanese Patent Laid-Open No. 64-65116) has been studied.

【0003】[0003]

【化3】 [Chemical 3]

【0004】式(1)で示されるエポキシ樹脂の使用に
よりレジン系の低粘度化が図られ、従って溶融シリカ粉
末を更に多く配合することにより組成物の成形後の低熱
膨張化及び低吸水化により、耐半田ストレス性の向上が
図られた。ただし溶融シリカ粉末を多く配合することに
よる弾性率の増加も一方の弊害であり、更なる耐半田ス
トレス性の向上が必要である。
By using the epoxy resin represented by the formula (1), it is possible to reduce the viscosity of the resin system. Therefore, by adding a larger amount of fused silica powder, the composition can have low thermal expansion and low water absorption after molding. The solder stress resistance was improved. However, an increase in elastic modulus due to the addition of a large amount of fused silica powder is one of the harmful effects, and further improvement in solder stress resistance is required.

【0005】[0005]

【発明が解決しようとする課題】本発明はこのような問
題に対してエポキシ樹脂として式(1)で示されるエポ
キシ樹脂を用い、成形品の弾性率、吸水量、熱膨張係数
を低下せしめるために、硬化剤として式(2)で示され
るナフトール樹脂硬化剤を用いることにより、基板実装
時における半導体パッケージの耐半田ストレス性を著し
く向上させた半導体封止用エポキシ樹脂組成物を提供す
るところにある。
The present invention uses an epoxy resin represented by the formula (1) as an epoxy resin to solve the above problems and reduces the elastic modulus, water absorption amount, and thermal expansion coefficient of a molded product. In addition, the use of a naphthol resin curing agent represented by the formula (2) as a curing agent provides a semiconductor encapsulating epoxy resin composition in which the solder stress resistance of a semiconductor package during substrate mounting is significantly improved. is there.

【0006】[0006]

【課題を解決するための手段】本発明のエポキシ樹脂組
成物はエポキシ樹脂とて下記式(1)で示される構造の
ビフェニル型エポキシ樹脂を総エポキシ樹脂量に
In the epoxy resin composition of the present invention, a biphenyl type epoxy resin having a structure represented by the following formula (1) is used as an epoxy resin in the total amount of epoxy resin.

【0007】[0007]

【化4】 [Chemical 4]

【0008】対して30〜100重量%含むエポキシ樹
脂と硬化剤として下記式(2)で示されるナフトール樹
脂硬化剤を総硬化剤量に対して
On the other hand, an epoxy resin containing 30 to 100% by weight and a naphthol resin curing agent represented by the following formula (2) as a curing agent are used with respect to the total amount of the curing agent.

【0009】[0009]

【化5】 [Chemical 5]

【0010】30〜100重量%含む硬化剤、無機充填
材および硬化促進剤を必須成分とする半導体封止用エポ
キシ樹脂組成物である。
An epoxy resin composition for semiconductor encapsulation, which contains a curing agent, an inorganic filler and a curing accelerator, which are contained in an amount of 30 to 100% by weight, as essential components.

【0011】式(1)の構造で示されるビフェニル型エ
ポキシ樹脂は1分子中に2ヶのエポキシ基を有する2官
能性エポキシ樹脂で、従来の多官能性エポキシ樹脂に比
べ溶融粘度が低くトランスファー成形時の流動性に優れ
る。従って組成物の溶融シリカ粉末を多く配合すること
ができ、低熱膨張化及び低吸水化が図られ、耐半田スト
レス性に優れるエポキシ樹脂組成物を得ることができ
る。
The biphenyl type epoxy resin represented by the structure of the formula (1) is a bifunctional epoxy resin having two epoxy groups in one molecule and has a lower melt viscosity than the conventional polyfunctional epoxy resin and is transfer molded. Excellent fluidity over time. Therefore, a large amount of fused silica powder of the composition can be blended, low thermal expansion and low water absorption can be achieved, and an epoxy resin composition having excellent solder stress resistance can be obtained.

【0012】このビフェニル型エポキシ樹脂の使用量は
これを調節することにより耐半田ストレス性を最大限に
引き出すことができる。耐半田ストレス性の効果を出す
ためには式(1)で示されるビフェニル型エポキシ樹脂
を総エポキシ樹脂量の30重量%以上、好ましくは50
重量%以上の使用が望ましい。30重量%未満だと低熱
膨張化及び低吸水性が得られず耐半田ストレス性が不充
分である。更に式中のR1〜R4はメチル基、R5〜R8
水素原子が好ましい。
By adjusting the amount of the biphenyl type epoxy resin used, the solder stress resistance can be maximized. In order to obtain the effect of resistance to soldering stress, the biphenyl type epoxy resin represented by the formula (1) is used in an amount of 30% by weight or more, preferably 50% by weight of the total epoxy resin amount.
It is desirable to use more than weight%. If it is less than 30% by weight, low thermal expansion and low water absorption cannot be obtained, and solder stress resistance is insufficient. Further, in the formula, R 1 to R 4 are preferably methyl groups, and R 5 to R 8 are preferably hydrogen atoms.

【0013】式(1)で示されるビフェニル型エポキシ
樹脂以外に他のエポキシ樹脂を併用する場合、用いるエ
ポキシ樹脂としてはエポキシ基を有するポリマー全般を
いう。例えばビスフェノール型エポキシ樹脂、クレゾー
ルノボラック型エポキシ樹脂、フェノールノボラック型
エポキシ樹脂及びトリフェノールメタン型エポキシ樹
脂、アルキル変性トリフェノールメタン型エポキシ樹脂
等の3官能型エポキシ樹脂、トリアジン核含有エポキシ
樹脂等のことをいう。
When another epoxy resin is used in combination with the biphenyl type epoxy resin represented by the formula (1), the epoxy resin to be used is a general polymer having an epoxy group. For example, bisphenol type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin and triphenol methane type epoxy resin, trifunctional epoxy resin such as alkyl modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, etc. Say.

【0014】式(2)の分子構造で示される硬化剤を用
いることにより、従来のフェノールノボラック樹脂硬化
剤等に比べると半田処理温度近辺での弾性率の低下とリ
ードフレーム及び半導体チップとの密着力を向上せし
め、また分子内にナフタレン構造が導入されていること
から、低熱膨張化及び低吸水化を得ることができる。従
って半田付け時の熱衝撃に対し、発生応力の低下とそれ
に伴なう半導体チップ等との剥離不良の防止に有効であ
る。
By using the curing agent represented by the molecular structure of the formula (2), as compared with the conventional phenol novolac resin curing agent, the elastic modulus lowers near the soldering temperature and the adhesion to the lead frame and the semiconductor chip is improved. Since the force is improved and the naphthalene structure is introduced in the molecule, low thermal expansion and low water absorption can be obtained. Therefore, it is effective for reducing the generated stress against the thermal shock at the time of soldering and preventing the defective peeling from the semiconductor chip or the like due to it.

【0015】式(2)のナフトール樹脂硬化剤の使用量
はこれを調節することにより耐半田ストレス性を最大限
に引き出すことができる。耐半田ストレス性の効果を引
き出すためには式(2)で示されるナフトール樹脂硬化
剤を総硬化剤量に対して30重量%以上、更に好ましく
は50重量%以上の使用が望ましい。使用量が30重量
%未満だと低吸水性、低弾性等及びリードフレーム、半
導体チップとの密着力が不充分で耐半田ストレス性の向
上が望めない。更に式中のnの値は1から6の範囲であ
ることが望ましく、nの値が3を越えると、トランスフ
ァー成形時での流動性が低下し、成形性が劣化する傾向
がある。式中のR1〜R4は水素原子が好ましい。
By adjusting the amount of the naphthol resin curing agent of the formula (2) used, solder stress resistance can be maximized. In order to bring out the effect of resistance to solder stress, it is desirable to use the naphthol resin curing agent represented by the formula (2) in an amount of 30% by weight or more, more preferably 50% by weight or more, based on the total amount of the curing agent. If the amount used is less than 30% by weight, low water absorption, low elasticity, etc. and insufficient adhesion to the lead frame and semiconductor chip, and improvement in solder stress resistance cannot be expected. Further, the value of n in the formula is preferably in the range of 1 to 6, and when the value of n exceeds 3, the fluidity at the time of transfer molding tends to decrease and the moldability tends to deteriorate. R 1 to R 4 in the formula are preferably hydrogen atoms.

【0016】式(2)で示されるナフトール樹脂硬化剤
以外に他の硬化剤を併用する場合、用いるものとしては
主にフェノール性水酸基を有するポリマー全般をいう。
例えば、フェノールノボラック樹脂、クレゾールノボラ
ック樹脂、ジシクロペンタジエン変性フェノール樹脂、
ジシクロペンタジエン変性フェノール樹脂とフェノール
ノボラック及びクレゾールノボラック樹脂との共重合
物、パラキシレン変性フェノール樹脂等を用いることが
できる。
When a curing agent other than the naphthol resin curing agent represented by the formula (2) is used in combination, it generally means all polymers having a phenolic hydroxyl group.
For example, phenol novolac resin, cresol novolac resin, dicyclopentadiene modified phenol resin,
A copolymer of a dicyclopentadiene-modified phenol resin and a phenol novolac or cresol novolac resin, a para-xylene-modified phenol resin, or the like can be used.

【0017】本発明で用いる無機充填材としては、溶融
シリカ粉末、球状シリカ粉末、結晶シリカ粉末、2次凝
集シリカ粉末、多孔質シリカ粉末、2次凝集シリカ粉末
または多孔質シリカ粉末を粉砕したシリカ粉末、アルミ
ナ等が挙げられ、特に溶融シリカ粉末、球状シリカ粉末
及び溶融シリカ粉末と球状シリカ粉末との混合物が好ま
しい。また無機充填材の配合量としては耐半田ストレス
性と成形性のバランスから総組成物量に対して70〜9
0重量%が好ましい。
As the inorganic filler used in the present invention, fused silica powder, spherical silica powder, crystalline silica powder, secondary agglomerated silica powder, porous silica powder, secondary agglomerated silica powder or silica obtained by pulverizing porous silica powder is used. Examples thereof include powder and alumina, and fused silica powder, spherical silica powder, and a mixture of fused silica powder and spherical silica powder are particularly preferable. In addition, the compounding amount of the inorganic filler is 70 to 9 relative to the total amount of the composition in view of the balance between solder stress resistance and moldability.
0% by weight is preferred.

【0018】本発明に使用される硬化促進剤はエポキシ
基と水酸基との反応を促進するものであればよく、一般
に封止用材料に使用されているものを広く使用すること
ができ、例えばジアザビシクロウンデセン(DBU)、
トリフェニルホスフィン(TPP)、ジメチルベンジル
アミン(BDMA)や2−メチルイミダゾール(2M
Z)等が単独もしくは2種類以上混合して用いられる。
本発明の封止用エポキシ樹脂組成物はエポキシ樹脂、硬
化剤、無機充填材及び硬化促進剤を必須成分とするが、
これ以外に必要に応じてシランカップリング剤、ブロム
化エポキシ樹脂、三酸化アンチモン、ヘキサブロムベン
ゼン等の難燃剤、カーボンブラック、ベンガラ等の着色
剤、天然ワックス、合成ワックス等の離型剤及びシリコ
ーンオイル、ゴム等の低応力添加剤等の種々の添加剤を
適宜配合しても差し支えがない。
The curing accelerator used in the present invention may be any one as long as it accelerates the reaction between the epoxy group and the hydroxyl group, and those generally used for sealing materials can be widely used. Zabicyclo undecene (DBU),
Triphenylphosphine (TPP), dimethylbenzylamine (BDMA) and 2-methylimidazole (2M
Z) and the like are used alone or in combination of two or more.
The epoxy resin composition for sealing of the present invention has an epoxy resin, a curing agent, an inorganic filler and a curing accelerator as essential components,
In addition to these, silane coupling agents, brominated epoxy resins, flame retardants such as antimony trioxide and hexabromene, colorants such as carbon black and red iron oxide, mold release agents such as natural wax and synthetic wax, and silicones as required. Various additives such as low stress additives such as oil and rubber may be appropriately blended.

【0019】又、本発明の封止用エポキシ樹脂組成物を
成形材料として製造するには、エポキシ樹脂、硬化剤、
無機充填材、硬化促進剤、その他の添加剤をミキサー等
によって十分に均一に混合した後、さらに熱ロールまた
はニーダー等で溶融混練し、冷却後粉砕して成形材料と
することができる。これらの成形材料は電子部品あるい
は電気部品の封止、被覆、絶縁等に適用することができ
る。
To produce the encapsulating epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent,
An inorganic filler, a curing accelerator, and other additives are sufficiently and uniformly mixed with a mixer or the like, and then melt-kneaded with a hot roll, a kneader, or the like, cooled, and then pulverized to obtain a molding material. These molding materials can be applied to sealing, coating, insulating, etc. of electronic parts or electric parts.

【0020】[0020]

【実施例】以下本発明を実施例にて具体的に説明する。 実施例1 下記組成物 式(3)で示されるエポキシ樹脂(軟化点 110℃、エポキシ当量190) 7.6重量部EXAMPLES The present invention will be specifically described below with reference to examples. Example 1 7.6 parts by weight of an epoxy resin represented by the following composition (3) (softening point 110 ° C., epoxy equivalent 190)

【0021】[0021]

【化6】 [Chemical 6]

【0022】 オルソクレゾールノボラックエポキシ樹脂(軟化点65℃、エポキシ当量20 0) 5.0重量部 式(4)で示されるナフトール樹脂硬化剤(軟化点76℃、水酸基当量120 ) 4.5重量部Orthocresol novolac epoxy resin (softening point 65 ° C., epoxy equivalent 200) 5.0 parts by weight Naphthol resin curing agent represented by the formula (4) (softening point 76 ° C., hydroxyl equivalent 120) 4.5 parts by weight

【0023】[0023]

【化7】 [Chemical 7]

【0024】(n=0が1 に対して、n=1が0.2、
n=2が0.1、n=3が<0.1である。) フェノールノボラック樹脂硬化剤(軟化点90℃、水酸基当量104) 2.9 重量部 溶融シリカ粉末 78.8重量部 トリフェニルホスフィン 0.2重量部 カーボンブラック 0.5重量部 カルナバワックス 0.5重量部 を、ミキサーで常温で混合し、70〜100℃で2軸ロ
ールにより混練し、冷却後粉砕し成形材料とした。得ら
れた成形材料を、タブレット化し、低圧トランスファー
成形機にて175℃、70kg/cm2、120秒の条件で
半田クラック試験用として6×6mmのチップを52pパ
ッケージに封止用し、又半田耐湿性試験用として3×6
mmのチップを16pSOPパッケージに封止した。封止
したテスト用素子について下記の半田クラック試験及び
半田耐湿性試験を行った。 半田クラック試験:封止したテスト用素子を85℃、8
5%RHの環境下で48Hr及び72Hr処理し、その後2
60℃の半田槽に10秒間浸漬後、顕微鏡で外部クラッ
クを観察した。 半田耐湿性試験:封止したテスト用素子を85℃で、8
5%RHの環境下で72Hr処理し、その後260℃の半
田槽に10秒間浸漬後、フレッシャークッカー試験(1
25℃、100%RH)を行い回路のオープン不良を測
定した。試験結果を表1に示す。
(Where n = 0 is 1, n = 1 is 0.2,
n = 2 is 0.1 and n = 3 is <0.1. ) Phenol novolac resin curing agent (softening point 90 ° C, hydroxyl equivalent 104) 2.9 parts by weight fused silica powder 78.8 parts by weight triphenylphosphine 0.2 parts by weight carbon black 0.5 parts by weight carnauba wax 0.5 parts by weight The parts were mixed at room temperature with a mixer, kneaded with a biaxial roll at 70 to 100 ° C., cooled and pulverized to obtain a molding material. The obtained molding material is made into a tablet, and a 6 × 6 mm chip is sealed in a 52p package for solder crack test under conditions of 175 ° C., 70 kg / cm 2 and 120 seconds with a low-pressure transfer molding machine, and solder is also used. 3 x 6 for humidity resistance test
The mm chip was encapsulated in a 16p SOP package. The following solder crack test and solder moisture resistance test were performed on the sealed test element. Solder crack test: sealed test element at 85 ° C, 8
Treated in an environment of 5% RH for 48 hours and 72 hours, then 2
After immersing in a solder bath at 60 ° C. for 10 seconds, external cracks were observed with a microscope. Solder moisture resistance test: Sealed test element at 85 ° C for 8
It is treated for 72 hours in an environment of 5% RH and then immersed in a solder bath at 260 ° C for 10 seconds, and then a fresher cooker test (1
At 25 ° C. and 100% RH), open circuit failure was measured. The test results are shown in Table 1.

【0025】実施例2〜5 表1の処方に従って配合し、実施例1と同様にして成形
材料を得た。この成形材料で試験用の封止した成形品を
得、この成形品を用いて実施例1と同様に半田クラック
試験及び半田耐湿性試験を行った。試験結果を表1に示
す。
Examples 2 to 5 Compounding was performed according to the formulation shown in Table 1, and a molding material was obtained in the same manner as in Example 1. Using this molding material, a molded product sealed for testing was obtained, and a solder crack test and a solder moisture resistance test were carried out in the same manner as in Example 1 using this molded product. The test results are shown in Table 1.

【0026】比較例1〜4 表1の処方に従って配合し、実施例と同様にして成形材
料を得た。この成形材料で試験用の封止した成形品を
得、この成形品を用いて実施例1と同様に半田クラック
試験及び半田耐湿性試験を行った。試験結果を表1に示
す。
Comparative Examples 1 to 4 Compounding was carried out according to the formulation shown in Table 1 and molding materials were obtained in the same manner as in Examples. Using this molding material, a molded product sealed for testing was obtained, and a solder crack test and a solder moisture resistance test were carried out in the same manner as in Example 1 using this molded product. The test results are shown in Table 1.

【0027】[0027]

【表1】 [Table 1]

【0028】[0028]

【発明の効果】本発明によると従来技術では得ることの
できなかった耐半田ストレス性を有するエポキシ樹脂組
成物を得ることができるので、半田付け工程による急激
な温度変化による熱ストレスを受けた時の耐クラック性
に非常に優れ、更に耐湿性が良好なことから電子、電気
部品の封止用、被覆用、絶縁用等に用いた場合、特に表
面実装パッケージに搭載された高集積大型チップICに
おいて非常に信頼性を必要とする製品について好適であ
る。
As described above, according to the present invention, an epoxy resin composition having a solder stress resistance which could not be obtained by the prior art can be obtained. Has very good crack resistance and good moisture resistance, so when used for encapsulation, coating, insulation, etc. of electronic and electrical parts, especially highly integrated large chip IC mounted in surface mount package It is suitable for products that require extremely high reliability.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 23/29 23/31

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 (A)下記式(1)で示されるエポキシ
樹脂 【化1】 を総エポキシ樹脂量に対して30〜 100重量%含む
エポキシ樹脂、(B)下記式(2)で示されるナフトー
ル樹脂硬化剤 【化2】 を総硬化剤量に対して30〜 100重量%含む硬化
剤、(C)無機充填材および(D)硬化促進剤を必須成
分とする半導体封止用エポキシ樹脂組成物。
1. An epoxy resin represented by the following formula (1): An epoxy resin containing 30 to 100% by weight with respect to the total amount of epoxy resin, (B) a naphthol resin curing agent represented by the following formula (2): An epoxy resin composition for semiconductor encapsulation, which comprises as an essential component a curing agent containing 30 to 100% by weight with respect to the total amount of curing agent, (C) an inorganic filler, and (D) a curing accelerator.
JP25851392A 1992-09-28 1992-09-28 Epoxy resin composition Pending JPH06107772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25851392A JPH06107772A (en) 1992-09-28 1992-09-28 Epoxy resin composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25851392A JPH06107772A (en) 1992-09-28 1992-09-28 Epoxy resin composition

Publications (1)

Publication Number Publication Date
JPH06107772A true JPH06107772A (en) 1994-04-19

Family

ID=17321258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25851392A Pending JPH06107772A (en) 1992-09-28 1992-09-28 Epoxy resin composition

Country Status (1)

Country Link
JP (1) JPH06107772A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194491B1 (en) 1997-10-03 2001-02-27 Hitachi Chemical Company, Ltd. Biphenyl epoxy resin, naphthalene-containing phenolic resin and accelerator triphenylphosphine/p-benzoquinone
WO2015053299A1 (en) * 2013-10-11 2015-04-16 日本化薬株式会社 Method for producing phenolic resin, phenolic resin, epoxy resin, and epoxy resin composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194491B1 (en) 1997-10-03 2001-02-27 Hitachi Chemical Company, Ltd. Biphenyl epoxy resin, naphthalene-containing phenolic resin and accelerator triphenylphosphine/p-benzoquinone
WO2015053299A1 (en) * 2013-10-11 2015-04-16 日本化薬株式会社 Method for producing phenolic resin, phenolic resin, epoxy resin, and epoxy resin composition

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