JPH06122984A - Ecr plasma treating method - Google Patents
Ecr plasma treating methodInfo
- Publication number
- JPH06122984A JPH06122984A JP27047992A JP27047992A JPH06122984A JP H06122984 A JPH06122984 A JP H06122984A JP 27047992 A JP27047992 A JP 27047992A JP 27047992 A JP27047992 A JP 27047992A JP H06122984 A JPH06122984 A JP H06122984A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- ecr
- ecr plasma
- pulse
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 10
- 238000003672 processing method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 abstract description 18
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- -1 atom ions Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、エッチング又はコーテ
ィング加工に応用する異方性ＥＣＲプラズマ処理方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anisotropic ECR plasma processing method applied to etching or coating processing.
【０００２】[0002]
【従来の技術】従来のＥＣＲプラズマ処理方法は、永久
磁石を使用して一定磁界０．０８７５Ｔ中で電子が磁力
線の周りで円運動をし、その角振動数ωCとマイクロ波
の角振動数ωとが一致してＥＣＲ現象が生じ、この現象
を例えばエッチング加工に応用している。この方法は高
速・高均一性を保った異方性、かつデバイスへの低損
傷、低汚染の点で優れており、今後デバイスがますます
微細化する観点から期待される技術である。2. Description of the Related Art A conventional ECR plasma processing method uses a permanent magnet to make a circular motion of electrons around a line of magnetic force in a constant magnetic field of 0.0875T, and its angular frequency ω C and the angular frequency of microwaves. The coincidence with ω causes an ECR phenomenon, and this phenomenon is applied to etching processing, for example. This method is excellent in terms of anisotropy that maintains high speed and high uniformity, low damage to devices, and low contamination, and is a technology that is expected from the viewpoint of further miniaturization of devices in the future.
【０００３】[0003]
【発明が解決しようとする課題】従来のＥＣＲプラズマ
エッチング方法は、一定磁界のみ、又は一定磁界にＲＦ
（ＭＨｚ）の高周波を加えて行うため、正確なエッチン
グ加工が困難な問題点がある。例えば図５は多層基板中
に導体が配線された多層高密度基板を試料として用いた
例であるが、ＥＣＲプラズマエッチング方法では散乱が
著しく、それに伴ってエッチングイオンが磁力線に沿っ
て回転移動し散乱状態となって、マスク穴を通過して回
り込み、回り込み角θ（°）が大きくなって異方性処理
が困難である。又、ＥＣＲプラズマコーティング方法の
場合も同様に、図６に示すようにコーティング原子イオ
ンの散乱が著しく異方性処理が困難である。そこで、本
発明ではいずれの場合も異方性処理を可能にするもので
ある。In the conventional ECR plasma etching method, only a constant magnetic field or a constant magnetic field is used.
Since it is performed by applying a high frequency (MHz), there is a problem that accurate etching processing is difficult. For example, FIG. 5 shows an example in which a multilayer high-density substrate in which conductors are wired in a multilayer substrate is used as a sample. In the ECR plasma etching method, scattering is remarkable, and as a result, etching ions are rotationally moved along the magnetic field lines and scattered. As a result, the wraparound angle θ (°) increases and the anisotropic treatment is difficult. Similarly, in the case of the ECR plasma coating method, as shown in FIG. 6, scattering of coating atom ions is remarkable and anisotropic treatment is difficult. Therefore, the present invention enables anisotropic treatment in any case.
【０００４】[0004]
【課題を解決するための手段】本発明は、マイクロ波の
進行方向と平行、又は垂直あるいは平行と垂直に磁界を
与えて生じるＥＣＲ現象を利用したＥＣＲプラズマ処理
方法において、プラズマ流の電界にτon０．１μｓ〜１
×１０6μｓのパルス電圧とパルス磁界を加えることを
特徴とするＥＣＲプラズマ処理方法である。According to the present invention, in an ECR plasma processing method utilizing an ECR phenomenon generated by applying a magnetic field parallel to, or perpendicular to, the direction of travel of microwaves, τ on 0.1 μs to 1
The ECR plasma processing method is characterized in that a pulse voltage and a pulse magnetic field of × 10 6 µs are applied.
【０００５】すなわち、試料を陰極とし、プラズマ発生
コラムの中に陽極を設け、この両電極間にパルス電圧と
パルス磁界を印加することにより、高電離プラズマ中の
イオンを誘導させ、目的とする試料の表面の片面又は一
部分を処理するのである。印加するパルス電圧の範囲を
上記のごとくにすることにより、イオン散乱は少なくな
り、試料表面の一部分の処理も均一に行われ、しかもＥ
ＣＲプラズマ処理能力にパルス電界による処理能力が加
わり、極めて速く高能率の処理を行うことができる。も
ちろん異方性処理効果も大きい。That is, a sample is used as a cathode, an anode is provided in a plasma generating column, and a pulse voltage and a pulse magnetic field are applied between the both electrodes to induce ions in the high-ionization plasma to obtain the target sample. One side or a part of the surface of the is treated. By setting the range of the pulse voltage to be applied as described above, the ion scattering is reduced and the treatment of a part of the sample surface is performed uniformly.
Since the processing capacity by the pulsed electric field is added to the CR plasma processing capacity, extremely high efficiency processing can be performed. Of course, the anisotropic treatment effect is also great.
【０００６】従来、ＥＣＲ現象を発生させるための磁力
は一定磁界の０．０８７５Ｔであるが、本発明における
パルス磁界では、平均磁界が０．０８７５Ｔとなるよう
にする。すなわち、一定磁界とは図３の（イ）に示すよ
うな形であるが、平均磁界とは図３（ロ）に示す形をい
う。又、本発明ではパルスτon０．１μｓ〜１×１０6
μｓの範囲としているが、この中で電流波形は図４
（イ）ないし（ヘ）に示すような種々の形がある。そし
てこれらに限定されるものではない。Conventionally, the magnetic force for generating the ECR phenomenon is a constant magnetic field of 0.0875T, but in the pulse magnetic field of the present invention, the average magnetic field is set to 0.0875T. That is, the constant magnetic field has the shape shown in FIG. 3A, while the average magnetic field has the shape shown in FIG. Further, in the present invention, the pulse τ on 0.1 μs to 1 × 10 6
Although the range is μs, the current waveform in this range is shown in FIG.
There are various shapes as shown in (a) to (f). And it is not limited to these.
【０００７】[0007]
【実施例】以下に実施例を図面に基づいて説明する。Embodiments Embodiments will be described below with reference to the drawings.
【０００８】図１において、１は処理すべき試料であ
る。２はイオン源でＥＣＲイオン源である。３は０．０
８７５Ｔの平均磁界を発生させるためのソレノイドコイ
ルで６が２．４５ＧＨｚのマイクロ波の進行方向を示
す。４は冷却水、５はエッチング用ガス又はコーティン
グ用ガスの導入口である。７が陰極で、８が陽極であ
り、この両電極間にτon０．１μｓ〜１×１０6μｓの
パルス電圧を加える。In FIG. 1, 1 is a sample to be processed. An ion source 2 is an ECR ion source. 3 is 0.0
In the solenoid coil for generating the average magnetic field of 875T, 6 indicates the traveling direction of the microwave of 2.45 GHz. Reference numeral 4 is cooling water, and 5 is an inlet for an etching gas or a coating gas. 7 is a cathode and 8 is an anode, and a pulse voltage of τ on 0.1 μs to 1 × 10 6 μs is applied between both electrodes.
【０００９】ＳｉＯ2を試料とした場合、エッチング用
ガスとしてＣＦ4＋２０％Ｈ2とし、０．０５Ｔｏｒｒの
雰囲気とした。マイクロ波出力は３５０Ｗである。イオ
ン源２の中で発生した電子はマイクロ波と平行磁界によ
り、速い速度で電子旋回を生じ、この電子による原子の
イオン化が急増して試料エッチングが進行する。この
時、イオンビーム加速電圧波形が直流の場合を比較例と
して挙げた。結果を表１に示す。When SiO 2 was used as a sample, CF 4 + 20% H 2 was used as an etching gas, and the atmosphere was 0.05 Torr. The microwave output is 350W. Electrons generated in the ion source 2 swirl at a high speed due to the microwave and the parallel magnetic field, and the ionization of atoms by the electrons rapidly increases to advance the sample etching. At this time, a case where the ion beam accelerating voltage waveform is DC is given as a comparative example. The results are shown in Table 1.
【００１０】[0010]
【表１】 [Table 1]
【００１１】表１において、例えばピーク電圧ＶP＝１
０００Ｖ、パルス幅τon＝０．０００１ｍｓ、平均磁束
密度０．０８７５Ｔの場合、試料のＳｉＯ2エッチング
速度は０．２１μｍ／ｍｉｎと３．５倍以上となり、異
方性処理効果が大きいことが判った。又、まわり込み角
が小さいこととともに、処理面のうねりが小さいことも
判った。さらに試料としてＳｉ3Ｎ4、Ａｌ2Ｏ3を用いた
場合についても試験をした。エッチング用ガス、雰囲
気、マイクロ波出力はＳｉＯ2の場合と同じである。た
だし、イオンビーム加速電圧波形は、ＶP＝１０００
Ｖ、τon＝０．０００５ｍｓ〜５００ｍｓの範囲内でエ
ッチング速度並びに回り込み角θ（°）について調べ
た。結果を表２および表３に示す。In Table 1, for example, the peak voltage V P = 1
In the case of 000 V, pulse width τ on = 0.0001 ms, and average magnetic flux density of 0.0875 T, the SiO 2 etching rate of the sample was 0.21 μm / min, which was 3.5 times or more, showing that the anisotropic treatment effect was large. It was It was also found that the wraparound angle was small and the waviness of the treated surface was small. Further, the test was performed also in the case where Si 3 N 4 and Al 2 O 3 were used as samples. The etching gas, atmosphere, and microwave output are the same as those for SiO 2 . However, the ion beam acceleration voltage waveform is V P = 1000
The etching rate and the wraparound angle θ (°) were investigated within the range of V, τ on = 0.0005 ms to 500 ms. The results are shown in Tables 2 and 3.
【００１２】[0012]
【表２】 [Table 2]
【００１３】[0013]
【表３】 [Table 3]
【００１４】表２、表３からも判るように、プラズマ中
にパルス電界を加えることは、エッチング速度を大きく
し、回り込み角θ（°）を小さくすることができる。As can be seen from Tables 2 and 3, by applying a pulsed electric field in the plasma, the etching rate can be increased and the wraparound angle θ (°) can be reduced.
【００１５】図２は他の実施例で、１１は処理すべき試
料である。１２はマイクロ波の進行方向に平行に、１３
はマイクロ波の進行方向に垂直に０．０８７５Ｔの平均
磁界を発生させるためのソレノイドコイルで、１４はヨ
ーク、１５はイオン源であり、１６は２．４５ＧＨｚの
マイクロ波の進行方向を示す。１７は反応ガス導入口
で、１８は排気系である。２０が陰極で１９が陽極であ
り、この両電極間に図１と同様なパルス電圧を加える。FIG. 2 shows another embodiment, 11 is a sample to be treated. 12 is parallel to the traveling direction of the microwave, 13
Is a solenoid coil for generating an average magnetic field of 0.0875 T perpendicular to the traveling direction of the microwave, 14 is a yoke, 15 is an ion source, and 16 is the traveling direction of the 2.45 GHz microwave. Reference numeral 17 is a reaction gas inlet, and 18 is an exhaust system. 20 is a cathode and 19 is an anode, and a pulse voltage similar to that in FIG. 1 is applied between both electrodes.
【００１６】図２の場合も図１の場合と同様にＳｉ
Ｏ2、Ｓｉ3Ｎ4およびＡｌ2Ｏ3を被加工材とし、エッチ
ングガスとしてＣＦ4＋Ｈ2を流し、０．０５Ｔｏｒｒの
雰囲気中で高電離プラズマを生成させるため、マイクロ
波の進行方向に対して０．０８７５Ｔとなる平均磁界を
与えた。さらにイオン温度を低温度化させるため、垂直
磁界０．０８７５Ｔの平均磁界を与えた。In the case of FIG. 2 as well as in the case of FIG.
O 2 , Si 3 N 4 and Al 2 O 3 are used as work materials, CF 4 + H 2 is flown as an etching gas, and high ionization plasma is generated in an atmosphere of 0.05 Torr. And an average magnetic field of 0.0875 T was applied. Further, in order to lower the ion temperature, an average magnetic field of a vertical magnetic field of 0.0875T was applied.
【００１７】この条件下において、陽極１９と陰極２０
との間にパルス電界を与えた結果、表４、表５および表
６に示すように、ＳｉＯ2、Ｓｉ3Ｎ4およびＡｌ2Ｏ3で
はエッチング速度は、それぞれ０．０６〜０．３０μｍ
／ｍｉｎ、０．０５〜０．２０μｍ／ｍｉｎ、０．０６
〜０．２６μｍ／ｍｉｎの高速エッチングを行うことが
でき、従来よりも速いエッチング速度が得られた。又、
従来の回り込み角θよりも小さな回り込み角を得ること
ができ、異方性効果が大である。Under this condition, the anode 19 and the cathode 20
As a result of applying a pulsed electric field between and, as shown in Table 4, Table 5 and Table 6, the etching rates of SiO 2 , Si 3 N 4 and Al 2 O 3 were 0.06 to 0.30 μm, respectively.
/ Min, 0.05 to 0.20 μm / min, 0.06
High-speed etching of about 0.26 μm / min can be performed, and a higher etching rate than the conventional one was obtained. or,
A wraparound angle smaller than the conventional wraparound angle θ can be obtained, and the anisotropy effect is large.
【００１８】さらに図２において、コーティングテスト
のため、反応ガスとしてＣｕＩ＋ＶＯＣｌ3＋ｐＨ3の混
合ガスを使用し、ガス圧は１Ｔｏｒｒで、平行磁界と垂
直磁界は共に０．０８７５Ｔとし、パルス電界を与え
た。その結果を表７に示す。パルス幅τon＝０．００５
ｍｓの場合、被覆速度は２．２μｍ／ｍｉｎ、面粗度は
０．０７μＨmax、厚み差は０．０ μｍ／ｍｍ2であ
り、滑らかな表面を得た。Further, in FIG. 2, for the coating test, a mixed gas of CuI + VOCl 3 + pH 3 was used as a reaction gas, the gas pressure was 1 Torr, the parallel magnetic field and the vertical magnetic field were both 0.0875 T, and a pulsed electric field was applied. . The results are shown in Table 7. Pulse width τ on = 0.005
In the case of ms, the coating speed was 2.2 μm / min, the surface roughness was 0.07 μH max , and the thickness difference was 0.0 μm / mm 2 , and a smooth surface was obtained.
【００１９】[0019]
【表４】 [Table 4]
【００２０】[0020]
【表５】 [Table 5]
【００２１】[0021]
【表６】 [Table 6]
【００２２】[0022]
【表７】 [Table 7]
【００２３】パルス磁界をマイクロ波に対して垂直とし
た以外は表１の場合と同様に実施した。結果を表８に示
す。The same procedure as in Table 1 was carried out except that the pulsed magnetic field was perpendicular to the microwave. The results are shown in Table 8.
【００２４】[0024]
【表８】 [Table 8]
【００２５】[0025]
【発明の効果】本発明はＥＣＲプラズマ処理方法におい
て、パルス電界を与えることにより異方性エッチング並
びに異方性コーティング処理を行うことができる。超Ｌ
ＳＩの加工精度においても、高異方性エッチング加工や
高異方性コーティング処理を施すことができる。INDUSTRIAL APPLICABILITY The present invention can perform anisotropic etching and anisotropic coating treatment by applying a pulsed electric field in the ECR plasma treatment method. Super L
Also in terms of SI processing accuracy, highly anisotropic etching processing or highly anisotropic coating processing can be performed.
【図１】本発明の実施例の説明図である。FIG. 1 is an explanatory diagram of an embodiment of the present invention.
【図２】本発明の他の実施例の説明図である。FIG. 2 is an explanatory diagram of another embodiment of the present invention.
【図３】一定磁界と平均磁界の説明図である。FIG. 3 is an explanatory diagram of a constant magnetic field and an average magnetic field.
【図４】本発明に適用するパルス電流波形の例を示す図
形である。FIG. 4 is a diagram showing an example of a pulse current waveform applied to the present invention.
【図５】プラズマエッチング加工による回り込み角の説
明図である。FIG. 5 is an explanatory diagram of a wraparound angle by plasma etching.
【図６】プラズマコーティング加工による被覆層の説明
図である。FIG. 6 is an explanatory diagram of a coating layer formed by plasma coating.
１ 試料 ２ イオン源 ３ ソレノイドコイル ４ 冷却水導入口 ５ 反応ガス導入口 ６ マイクロ波進行方向 ７ 陰極 ８ 陽極 １１ 試料 １２ ソレノイドコイル １３ ソレノイドコイル １４ ヨーク １５ イオン源 １６ マイクロ波進行方向 １７ 反応ガス導入口 １８ 排気系 １９ 陽極 ２０ 陰極 1 sample 2 ion source 3 solenoid coil 4 cooling water inlet 5 reaction gas inlet 6 microwave traveling direction 7 cathode 8 anode 11 sample 12 solenoid coil 13 solenoid coil 14 yoke 15 ion source 16 microwave traveling direction 17 reactive gas inlet 18 Exhaust system 19 Anode 20 Cathode
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１０月２２日[Submission date] October 22, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１８[Correction target item name] 0018
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１８】さらに図２において、コーティングテスト
のため、反応ガスとしてＣｕＩ＋ＶＯＣｌ3＋ｐＨ3の混
合ガスを使用し、ガス圧は１Ｔｏｒｒで、平行磁界と垂
直磁界は共に０．０８７５Ｔとし、パルス電界を与え
た。その結果を表７に示す。パルス幅τon＝０．００５
ｍｓの場合、被覆速度は２．２μｍ／ｍｉｎ、面粗度は
０．０７μＨmax、厚み差は０．０３μｍ／ｍｍ2であ
り、滑らかな表面を得た。Further, in FIG. 2, for the coating test, a mixed gas of CuI + VOCl 3 + pH 3 was used as a reaction gas, the gas pressure was 1 Torr, the parallel magnetic field and the vertical magnetic field were both 0.0875 T, and a pulsed electric field was applied. . The results are shown in Table 7. Pulse width τ on = 0.005
In the case of ms, the coating speed was 2.2 μm / min, the surface roughness was 0.07 μH max , and the thickness difference was 0.03 μm / mm 2 , and a smooth surface was obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大場 和夫 埼玉県東松山市松葉町４丁目２番３号 (72)発明者 嶋 好範 神奈川県川崎市麻生区王禅寺768番地15 (72)発明者 大場 章 埼玉県朝霞市浜崎１丁目９番地の３−205 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Oba 4-chome 2-3, Matsuba-cho, Higashimatsuyama-shi, Saitama (72) Inventor Yoshinori Shima 768, Ozenji, Aso-ku, Kawasaki-shi, Kanagawa 15 (72) Inventor Oba Chapter 3-205, 1-9 Hamasaki, Asaka City, Saitama Prefecture
Claims (3)
えて生じる電子サイクロトロン共鳴（ＥＣＲ）現象を利
用したＥＣＲプラズマ処理方法において、プラズマ流の
電界にパルス幅τon０．１μｓ〜１×１０6μｓのパル
ス電圧とパルス磁界を加えることを特徴とするＥＣＲプ
ラズマ処理方法。1. In an ECR plasma processing method utilizing an electron cyclotron resonance (ECR) phenomenon generated by applying a magnetic field parallel to the direction of propagation of microwaves, a pulse width τ on 0.1 μs to 1 × 10 to the electric field of the plasma flow. An ECR plasma processing method characterized by applying a pulse voltage and a pulse magnetic field of 6 μs.
えて生じる電子サイクロトロン共鳴（ＥＣＲ）現象を利
用したＥＣＲプラズマ処理方法において、プラズマ流の
電界にパルス幅τon０．１μｓ〜１×１０6μｓのパル
ス電圧とパルス磁界を加えることを特徴とするＥＣＲプ
ラズマ処理方法。2. In an ECR plasma processing method using an electron cyclotron resonance (ECR) phenomenon generated by applying a magnetic field perpendicular to the direction of propagation of microwaves, a pulse width τ on 0.1 μs to 1 × 10 to the electric field of the plasma flow. An ECR plasma processing method characterized by applying a pulse voltage and a pulse magnetic field of 6 μs.
に磁界を与えて生じる電子サイクロトロン共鳴（ＥＣ
Ｒ）を利用したＥＣＲプラズマ処理方法において、プラ
ズマ流の電界にパルス幅τon０．１μｓ〜１×１０6μ
ｓのパルス電圧と垂直および平行にパルス磁界を加える
ことを特徴とするＥＣＲプラズマ処理方法。3. Electron cyclotron resonance (EC) generated by applying a magnetic field perpendicular to and parallel to the traveling direction of microwaves.
In the ECR plasma processing method using R), a pulse width τ on 0.1 μs to 1 × 10 6 μ is applied to the electric field of the plasma flow.
An ECR plasma processing method comprising applying a pulse magnetic field in a direction perpendicular and parallel to the pulse voltage of s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4270479A JP2584396B2 (en) | 1992-10-08 | 1992-10-08 | ECR plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4270479A JP2584396B2 (en) | 1992-10-08 | 1992-10-08 | ECR plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06122984A true JPH06122984A (en) | 1994-05-06 |
| JP2584396B2 JP2584396B2 (en) | 1997-02-26 |
Family
ID=17486876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4270479A Expired - Lifetime JP2584396B2 (en) | 1992-10-08 | 1992-10-08 | ECR plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584396B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| WO2018061235A1 (en) * | 2016-09-28 | 2018-04-05 | 株式会社日立ハイテクノロジーズ | Plasma treatment device and plasma treatment method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS602388A (en) * | 1983-06-21 | 1985-01-08 | Fuji Xerox Co Ltd | Transfer-type thermal recorder |
| JPS6379986A (en) * | 1986-09-25 | 1988-04-09 | Canon Inc | Plasma controller |
| JPH0277123A (en) * | 1988-06-24 | 1990-03-16 | Tokyo Electron Ltd | Dry etching |
| JPH02312227A (en) * | 1989-05-29 | 1990-12-27 | Hitachi Ltd | Plasma processing and plasma processor |
| JPH0448726A (en) * | 1990-06-18 | 1992-02-18 | Samsung Electron Co Ltd | Plasma generating device and method using modulation system |
-
1992
- 1992-10-08 JP JP4270479A patent/JP2584396B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS602388A (en) * | 1983-06-21 | 1985-01-08 | Fuji Xerox Co Ltd | Transfer-type thermal recorder |
| JPS6379986A (en) * | 1986-09-25 | 1988-04-09 | Canon Inc | Plasma controller |
| JPH0277123A (en) * | 1988-06-24 | 1990-03-16 | Tokyo Electron Ltd | Dry etching |
| JPH02312227A (en) * | 1989-05-29 | 1990-12-27 | Hitachi Ltd | Plasma processing and plasma processor |
| JPH0448726A (en) * | 1990-06-18 | 1992-02-18 | Samsung Electron Co Ltd | Plasma generating device and method using modulation system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| WO2018061235A1 (en) * | 2016-09-28 | 2018-04-05 | 株式会社日立ハイテクノロジーズ | Plasma treatment device and plasma treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2584396B2 (en) | 1997-02-26 |
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