JPH06123744A - High-temperature and high-humidity interatomic-force microscope and observation and quantifying method of chemical reaction - Google Patents

High-temperature and high-humidity interatomic-force microscope and observation and quantifying method of chemical reaction

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Publication number
JPH06123744A
JPH06123744A JP8298592A JP8298592A JPH06123744A JP H06123744 A JPH06123744 A JP H06123744A JP 8298592 A JP8298592 A JP 8298592A JP 8298592 A JP8298592 A JP 8298592A JP H06123744 A JPH06123744 A JP H06123744A
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JP
Japan
Prior art keywords
probe
temperature
humidity
force microscope
atomic force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP8298592A
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Japanese (ja)
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JP2946931B2 (en
Inventor
Yuji Tsukamoto
雄二 塚本
Akinobu Sato
明伸 佐藤
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NEC Corp
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NEC Corp
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Publication of JPH06123744A publication Critical patent/JPH06123744A/en
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Abstract

PURPOSE:To achieve that a change in the morphology of a surface such as a corrosion phenomenon or the like caused under a high-temperature and high-humidity condition is observed on the spot by a method wherein a probe covered with a noble metal-based thin film and an actuator covered with a fluororesin and a glass-based molding material are used. CONSTITUTION:A probe 1 is covered with a Cr film in 5nm thickness by a sputtering method, and the Cr film is covered additionally with a Pt thin film in 5nm thickness. A probe-driving Z-axis actuator 4 covered with a fluororesin and a glass-based molding material and a sample-scanning X-Y positioner 3 are used. An amplifier 5 which is vacuum-sealed inside a ceramic package and a glass container receives a signal from a probe-displacement measuring system which detects a fluctuation in a force acting between the probe 1 and a sample 2, and it controls the actuator 4 so that the displacement of the probe 1 becomes definite. The probe-displacement measuring system is constituted of a laser semiconductor element 4 and a light-detecting CCD element 7 which have been vacuum-sealed in an antireflective glass container. The whole apparatus is installed inside a glass container 8 whose coefficient of thermal expansion is extremely small.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高温高湿下で生じる腐
食現象など科学的あるいは物理的な変化に伴う表面形態
変化のその場観察を可能にする高温高湿型原子間力顕微
鏡(以下、AFMと略す)及びその化学反応を観察・定
量化する方法に関する。
BACKGROUND OF THE INVENTION The present invention relates to a high temperature and high humidity type atomic force microscope (hereinafter referred to as "high temperature and high humidity type atomic force microscope" which enables in-situ observation of surface morphological changes due to scientific or physical changes such as corrosion phenomenon occurring under high temperature and high humidity. , AFM) and a method of observing and quantifying the chemical reaction thereof.

【0002】[0002]

【従来の技術】AFMは走査型トンネル顕微鏡(以下、
STMと略す)から派生した表面観察手段であり、ST
Mと同様ミクロンオーダーでの表面形態の観察から原子
レベルでの構造観察が可能である。STMは探針/試料
間に流れるトンネル電流を、AFMは探針/試料間に作
用する微小な力をそれぞれ検出プローブとしている。S
TMでは探針と試料の両者に導電性を必要としている。
STMと比較したAFMの特徴は、試料に導電性を必要
としない点であり、誘電体など電気伝導性を有しない物
質の表面構造観察手段として有効である。AFMはNa
noscopeII(米国Digital Instr
ument社が生産販売しているSTMの商品名)のオ
プションやOAFM(オリンパス光学(株)の商品名)
としてすでに市販されている。被検査試料に導電性を必
要としないAFMは、一般に腐食生成物が電気伝導性を
有さないことから、腐食現象の観察に有効であると思わ
れる。
2. Description of the Related Art AFM is a scanning tunneling microscope (hereinafter referred to as
A surface observation means derived from STM)
Similar to M, it is possible to observe the structure at the atomic level by observing the surface morphology on the order of microns. The STM uses the tunnel current flowing between the probe and the sample as the detection probe, and the AFM uses the minute force acting between the probe and the sample as the detection probe. S
The TM requires conductivity for both the probe and the sample.
The feature of the AFM compared with the STM is that the sample does not require conductivity, and is effective as a means for observing the surface structure of a substance having no electrical conductivity such as a dielectric. AFM is Na
noscope II (US Digital Instr.
option of STM manufactured and sold by Ument Inc. and OAFM (trade name of Olympus Optical Co., Ltd.)
Is already on the market. The AFM, which does not require conductivity for the sample to be inspected, is generally considered to be effective for observing the corrosion phenomenon because the corrosion product does not have electrical conductivity.

【0003】産業上の利用分野の項に述べたように、本
発明は高温高湿下で生じる腐食現象などをその場観察で
きるAFMに関する。そこで、腐食現象の観察にAFM
を応用する必要性をはじめに説明する。軽薄短小化の傾
向は全産業を通して浸透しており、特に電子デバイスの
分野においてはサブミクロンからサブサブミクロン、い
わゆるナノメータ膜厚の薄膜を積層した薄膜デバイスが
数多く商品化されている。このような薄膜デバイスでは
従来無視されてきた極めて微量の腐食現象がデバイス全
体の機能や寿命を決定することになり、ナノメータ・ス
ケールで進行する極微量の腐食現象を観察,定量化する
技術の確立が急務とされている。
As described in the field of industrial application, the present invention relates to an AFM capable of in-situ observation of a corrosion phenomenon and the like occurring under high temperature and high humidity. Therefore, to observe the corrosion phenomenon, AFM
The necessity of applying is first explained. The tendency toward lightness, thinness, shortness, and miniaturization is prevailing throughout all industries, and particularly in the field of electronic devices, many thin film devices in which thin films of submicron to subsubmicron, so-called nanometer film thickness are laminated are commercialized. In such thin film devices, the extremely small amount of corrosion phenomenon that has been ignored in the past will determine the function and life of the entire device, and the establishment of technology to observe and quantify the extremely small amount of corrosion phenomenon that progresses on the nanometer scale. Is urgently needed.

【0004】このような技術動向を背景にして、腐食,
酸化,吸着など表面における化学反応を対象とした測定
評価技術が実用化されていることは周知の事実である。
微量腐食の定量化技術に着目すれば、最近水晶振動子を
質量センサーとして用い、水晶振動子上に設けた薄膜表
面で進行する腐食現象をナノグラム・オーダーで検知す
る腐食評価装置が提案されている(例えば特開平3−2
06921号公報)。また、微細パターンを設けた薄膜
試料を高温高湿環境に曝露し、曝露前後の微細パターン
試料の電気抵抗変化から腐食量を定量化する微細パター
ン抵抗法(Katsumichi Tagami an
d Hiroshi Hayashida:Corro
sion Rate Activation Ener
gy of Sputtered CoCr Perp
endicular Media,IEEE TRAN
SACTIONS ON MAGNETICS,Vol
ume Mag−23,No.5,1987,pp36
48−3650)も提案されている。
Against this background of technological trends, corrosion,
It is a well-known fact that measurement and evaluation technology targeting chemical reactions on the surface such as oxidation and adsorption has been put to practical use.
Focusing on the quantification technology of micro-corrosion, a corrosion evaluation device has recently been proposed that uses a crystal unit as a mass sensor and detects the corrosion phenomenon that progresses on the surface of a thin film provided on the crystal unit in nanogram order. (For example, Japanese Patent Laid-Open No. 3-2
No. 06921). In addition, a thin film sample provided with a fine pattern is exposed to a high temperature and high humidity environment, and the amount of corrosion is quantified from the change in the electrical resistance of the fine pattern sample before and after the exposure (Katsuzumichi Tagami an).
d Hiroshi Hayashida: Corro
sion Rate Activation Ener
gy of Sputtered CoCr Perp
endical Media, IEEE TRAN
SACTIONS ON MAGNETICS, Vol
ume Mag-23, No. 5,1987, pp36
48-3650) has also been proposed.

【0005】[0005]

【発明が解決しようとする課題】水晶振動子法や微細パ
ターン抵抗法などの従来の微量腐食検知技術の短所は、
表面のどの位置で、どのような状態の、どの程度の腐食
が発生しているかといった疑問に対して答えてくれない
という点に集約される。この疑問は薄膜化がより進展
し、より初期段階の腐食が問題となりつつある電子デバ
イスの信頼性にとって早急に答えを与えねばならない重
要な技術課題である。そして、この課題は従来の評価技
術が現象の進行過程を測定環境下でその場観察できる技
術ではないことから発している。
The disadvantages of the conventional trace corrosion detection techniques such as the crystal oscillator method and the fine pattern resistance method are
It is summarized in that it does not answer questions such as where on the surface, what kind of condition and how much corrosion has occurred. This question is an important technical issue that must be urgently answered for the reliability of electronic devices in which thinning progresses and corrosion in the early stage is becoming a problem. This problem arises from the fact that the conventional evaluation technique is not a technique that allows in-situ observation of the progress process of a phenomenon under a measurement environment.

【0006】また、水晶振動子法においては振動子の振
動安定性の制約を受けて、測定時間が10時間以内と限
定されることから、耐食性や耐酸化性の良好な材料の評
価が不可能であるといった欠点が指摘されている。
Further, in the crystal oscillator method, the measurement time is limited to within 10 hours due to the restriction of the vibration stability of the oscillator, so that it is impossible to evaluate a material having good corrosion resistance and oxidation resistance. It has been pointed out that there is a drawback.

【0007】微細パターン法は、試料が電気伝導性であ
り、反応生成物が非電気伝導性であり、かつ全面均一な
化学反応系であることに限定され、これら3条件のひと
つでも満足されなければ、適用できないという欠点があ
る。
The fine pattern method is limited to a chemical reaction system in which the sample is electrically conductive, the reaction product is non-electrically conductive, and is uniform over the entire surface, and any one of these three conditions must be satisfied. If this is the case, it has the drawback that it cannot be applied.

【0008】AFMは原子レベルの分解能を有し、非伝
導性物質の測定も可能であることから、この点を解決し
得る極めて有効な手段のひとつであると考えられる。し
かしAFMを用いた高温高湿下での腐食の定量化測定は
なされておらず、更に腐食現象の解明にはその場観測を
することが重要である。その場観察を可能とするために
は、温度と湿度を制御できる環境内でAFMを作動させ
る必要がある。すなわち、AFMによる腐食その場観察
装置は、通常の室温大気中や真空中のAFMと異なり、
高温高湿といった原子レベルの分解能が要求される測定
装置にとって極めて苛酷な作動環境で作動させる必要が
ある。したがって、克服すべき主要な技術課題は以下の
4点である。
Since AFM has atomic level resolution and can measure non-conductive substances, it is considered to be one of the extremely effective means for solving this point. However, quantification measurement of corrosion under high temperature and high humidity using AFM has not been done, and in-situ observation is important for further elucidation of corrosion phenomenon. In order to enable in-situ observation, it is necessary to operate the AFM in an environment where the temperature and humidity can be controlled. That is, the in-situ observation apparatus for corrosion by AFM is different from the ordinary AFM in room temperature atmosphere or vacuum.
It is necessary to operate in an extremely harsh operating environment for a measuring device that requires atomic resolution such as high temperature and high humidity. Therefore, there are the following four major technical problems to be overcome.

【0009】1)高温高湿下における探針、探針走査・
駆動系とその回路系の経時変化や劣化を抑える。
1) Probe under high temperature and high humidity, scanning probe
Suppress changes and deterioration of the drive system and its circuit system over time.

【0010】2)探針の変位検出系であるレーザ半導体
素子と光検出CCD素子の経時変化や劣化を抑える。
2) It is possible to prevent the laser semiconductor element and the photo-detecting CCD element, which are the displacement detecting system of the probe, from changing over time or deteriorating.

【0011】3)温度の不均一や温度ドリフトに起因す
る観察位置の移動や観察像のゆがみを抑える。
3) The movement of the observation position and the distortion of the observation image due to the non-uniformity of temperature and the temperature drift are suppressed.

【0012】4)温度の不均一や水蒸気供給の不備に起
因する水蒸気分圧の不均一や局所的な結露状態を抑え
る。
4) The unevenness of the partial pressure of steam and the local dew condensation caused by the uneven temperature and the insufficient supply of steam are suppressed.

【0013】従来の技術の項に記述した市販のAFM装
置は上記1)〜4)項すべてを考慮しておらず、探針や
探針変位測定系の劣化に起因して、AFM像がドリフト
し、AFM像観察が不可能となる。
The commercially available AFM device described in the section of the prior art does not consider all of the above items 1) to 4), and the AFM image drifts due to the deterioration of the probe and the probe displacement measuring system. However, it becomes impossible to observe the AFM image.

【0014】また、酸化,腐食などの化学反応は一般に
体積膨張もしくは収縮を伴うことから、化学反応の初期
段階においては表面形態や表面あらさはナノメータ・ス
ケールで変化するとされている。観察・測定の対象であ
る化学反応の進行に応じた、表面あらさなどの変化を精
密に測定できれば、表面あらさの経時変化に基づいた化
学反応の定量化が可能となるし、化学反応が進行してい
る環境下でその過程をその場観察できれば、従来の観察
手段(XPSやオージェ分光法)とは異なるまったく新
しい化学反応のその場観察法を提供できることになる。
Further, since chemical reactions such as oxidation and corrosion generally accompany volume expansion or contraction, it is said that the surface morphology and surface roughness change on the nanometer scale in the initial stage of the chemical reaction. If changes in the surface roughness, etc., can be accurately measured according to the progress of the chemical reaction that is the object of observation / measurement, it becomes possible to quantify the chemical reaction based on the change in the surface roughness over time, and the chemical reaction progresses. If the process can be observed in-situ under a certain environment, it is possible to provide a completely new in-situ observation method of chemical reaction different from the conventional observation means (XPS and Auger spectroscopy).

【0015】しかしながら、従来の表面形態観察測定装
置、例えば走査型電子顕微鏡や触針式表面あらさ計で
は、化学反応の初期段階で生じるナノメータ・レベルの
表面形態変化の測定には分解能が不十分であった。
However, the conventional surface morphology observation and measurement apparatus, such as a scanning electron microscope and a stylus type surface roughness meter, have insufficient resolution to measure the nanometer level surface morphology change occurring in the initial stage of the chemical reaction. there were.

【0016】本発明の目的は以上の課題を解決した高温
高湿型原子間力顕微鏡及び化学反応の観察・定量化方法
を提供することにある。
An object of the present invention is to provide a high temperature and high humidity type atomic force microscope and a method for observing and quantifying chemical reactions, which solves the above problems.

【0017】[0017]

【課題を解決するための手段】高温高湿下での探針表
面、特に探針先端の酸化,腐食は安定したAFM像の観
察を困難にする。そこで本発明では通常のAFM用探針
にCr膜を5nm、Cr膜上にさらにAuやPtなど貴
金属系薄膜を5nm被覆することによって探針の酸化,
腐食を防止した。
Means for Solving the Problems Oxidation and corrosion of the probe surface, especially the tip of the probe under high temperature and high humidity makes it difficult to observe a stable AFM image. Therefore, in the present invention, a conventional AFM probe is coated with a Cr film of 5 nm, and a Cr film is further coated with a noble metal thin film such as Au or Pt to a thickness of 5 nm to oxidize the probe.
Prevented corrosion.

【0018】探針を駆動するZ軸方向のアクチュエータ
と、試料を走査するXYポジショナは、フッソ樹脂(膜
厚10μm)でコーティングした後、さらにガラス系モ
ールド材で被覆した。これにより水蒸気の浸入を防止
し、安定した走査性を確保した。
The Z-axis actuator for driving the probe and the XY positioner for scanning the sample were coated with a fluorine resin (film thickness 10 μm) and then further coated with a glass type molding material. As a result, invasion of water vapor was prevented and stable scannability was secured.

【0019】探針駆動用の回路系の主要な部分である前
置き増幅器は、セラミック製パッケージ内に真空封入し
た後、端子に金線を接続し、さらにガラス容器内に真空
管と同様の手法で真空封入した。2段階の真空封止によ
り前置き増幅回路への水蒸気の浸入と過度の温度上昇を
抑制し、探針駆動回路の安定した動作を保証した。ま
た、レーザ半導体素子と光検出CCD素子は、無反射ガ
ラスで作製した容器内に真空封入することによって、そ
れらの素子の劣化を防止した。
The preamplifier, which is the main part of the probe driving circuit system, is sealed in a ceramic package under vacuum, and then gold wires are connected to the terminals, and the glass container is evacuated in the same manner as a vacuum tube. Enclosed. The two-stage vacuum sealing suppressed the invasion of water vapor into the pre-amplification circuit and the excessive temperature rise, and ensured the stable operation of the probe drive circuit. Further, the laser semiconductor element and the photodetection CCD element were vacuum-sealed in a container made of non-reflective glass to prevent deterioration of these elements.

【0020】AFMは熱膨張係数が2×10-8(/℃)
と極めて小さいガラス容器内に設置した。直径12c
m、高さ15cmの円柱形のガラス容器には温度と湿度
を調整した空気を送り込むための流入口と、排出用の流
出口を各10個、合計20個設け、容器内の位置による
温度,湿度の変動を抑制した。また、小型の温湿度セン
サをガラス容器内に設置し、ガラス容器内の位置による
温度と湿度の変動を測定し、この変動ができるだけ小さ
くなるように流入口へ送り込む空気量を調節した。な
お、この空気流入量は温湿度センサからの情報と空気量
を調節する電磁バルブとを連動させることにより自動的
に調整される。これらの工夫を施すことにより、AFM
測定を行う環境内の温度変動を±0.1℃、湿度変動を
±1.0%以内に抑えることが可能となり、高温高湿下
においても安定してAFM測定を行えるようにした。
AFM has a coefficient of thermal expansion of 2 × 10 -8 (/ ° C)
And installed in a very small glass container. Diameter 12c
In a cylindrical glass container having a height of 15 cm and a height of 15 cm, there are provided 20 inlets for injecting air whose temperature and humidity are adjusted and 10 outlets for discharging, a total of 20 outlets. The fluctuation of humidity was suppressed. In addition, a small temperature / humidity sensor was installed in the glass container, the fluctuation of temperature and humidity depending on the position in the glass container was measured, and the amount of air sent to the inlet was adjusted so that this fluctuation was minimized. The air inflow amount is automatically adjusted by linking the information from the temperature and humidity sensor with an electromagnetic valve that adjusts the air amount. By making these improvements, AFM
The temperature fluctuation in the environment where the measurement is performed can be suppressed to ± 0.1 ° C. and the humidity fluctuation can be suppressed to within ± 1.0%, and the AFM measurement can be stably performed even under high temperature and high humidity.

【0021】また、本発明の化学反応の観察・定量化方
法では、試料の表面形態、もしくは表面あらさの経時変
化を高温高湿型原子間力顕微鏡あるいは雰囲気制御型原
子間力顕微鏡を用いてナノスケールで測定することによ
り、化学反応のその場観察と定量化を可能にしたもので
ある。
In addition, in the method for observing and quantifying a chemical reaction of the present invention, the change in surface morphology or surface roughness of the sample with time is analyzed using a high temperature and high humidity atomic force microscope or an atmosphere controlled atomic force microscope. By measuring on a scale, it enables in-situ observation and quantification of chemical reactions.

【0022】[0022]

【作用】AFMは表面形態を0.1nm程度の分解能で
測定できることから、化学反応の初期段階における極め
て微小な表面形態や表面あらさの変化を検知することが
できる。本発明の高温高湿型原子間力顕微鏡は温度10
0℃以下、相対湿度90%以下の環境で、雰囲気制御型
原子間力顕微鏡は温度100℃以下、各種ガス雰囲気下
で、それぞれAFM測定を可能としたものであり、これ
らを用いることにより反応過程の進行をその場観察する
ことができる。
Since the AFM can measure the surface morphology with a resolution of about 0.1 nm, it is possible to detect extremely minute changes in the surface morphology and surface roughness in the initial stage of the chemical reaction. The high temperature and high humidity type atomic force microscope of the present invention has a temperature of 10
In an environment of 0 ° C or less and relative humidity of 90% or less, an atmosphere-controlled atomic force microscope enables AFM measurement under various gas atmospheres at a temperature of 100 ° C or less. By using these, the reaction process The progress of can be observed on the spot.

【0023】なお、本発明のAFMのそれぞれの手段が
有する機能およびそれらによって得られた効果は、実施
例の項で詳述する。
The functions of the respective means of the AFM of the present invention and the effects obtained by them will be described in detail in the section of Examples.

【0024】[0024]

【実施例】本発明の実施例について説明する。図1は本
発明の高温高湿型原子間力顕微鏡の一実施例のブロック
図である。本実施例の高温高湿型原子間力顕微鏡は、温
度100℃以下、相対湿度90%以下の高温高湿環境下
で動作し、温度変動を±0.1℃、相対湿度変動を±
1.0%以内に制御した熱膨張係数5×10-8(/℃)
以下のガラス容器8内に設置される。この高温高湿型原
子間力顕微鏡は、貴金属系薄膜で被覆した探針1を用
い、フッソ樹脂およびガラス系モールド材で被覆した探
針駆動用Z軸アクチュエータ4と、試料走査用XYポジ
ショナ3を用い、無反射ガラス容器内に真空封入したレ
ーザ半導体素子6と光検出CCD素子7で探針の変位測
定系を構成し、セラミック製パッケージおよびガラス容
器内に真空封入した探針駆動回路用前置き増幅器5を用
いている。
EXAMPLES Examples of the present invention will be described. FIG. 1 is a block diagram of an embodiment of a high temperature and high humidity type atomic force microscope of the present invention. The high temperature and high humidity type atomic force microscope of the present embodiment operates in a high temperature and high humidity environment where the temperature is 100 ° C. or lower and the relative humidity is 90% or lower, and the temperature fluctuation is ± 0.1 ° C. and the relative humidity fluctuation is ±.
Coefficient of thermal expansion controlled within 1.0% 5 × 10 -8 (/ ° C)
It is installed in the following glass container 8. This high temperature and high humidity type atomic force microscope uses a probe 1 coated with a noble metal thin film, a Z axis actuator 4 for driving the probe coated with a fluorine resin and a glass molding material, and an XY positioner 3 for scanning a sample. Using a laser semiconductor device 6 and a photodetection CCD device 7 which are vacuum-sealed in a non-reflective glass container, a probe displacement measurement system is configured, and a ceramic package and a preamplifier for a probe drive circuit vacuum-sealed in a glass container are used. 5 is used.

【0025】探針1は従来のAFM用探針に、スパッタ
法によりCr膜を5nm被覆し、Cr膜上にさらにスパ
ッタ法によりPt薄膜を5nm被覆した探針である。C
rとPtを被覆することによって探針1の酸化,腐食を
防止した。Cr膜はPt薄膜の剥離を抑える付着層とし
て設けた。従来のAFM用探針はSi基板からドライプ
ロセスによつて加工したもので、電気伝導性に欠けるた
め、探針1や試料2に静電気を帯電し易く、静電気によ
つて観察不能状態となることが多い。本発明に用いた探
針1では、Pt膜により電気伝導性が保証されているた
め、上記のような観察が不可能となる状態を回避するこ
とができた。
The probe 1 is a conventional AFM probe in which a Cr film is coated to a thickness of 5 nm by a sputtering method, and a Pt thin film is further coated to a thickness of 5 nm on the Cr film by a sputtering method. C
Oxidation and corrosion of the probe 1 were prevented by coating with r and Pt. The Cr film was provided as an adhesion layer for suppressing peeling of the Pt thin film. The conventional AFM probe is processed from a Si substrate by a dry process, and lacks electrical conductivity. Therefore, the probe 1 and the sample 2 are easily charged with static electricity, and the static electricity causes an unobservable state. There are many. In the probe 1 used in the present invention, the electrical conductivity is ensured by the Pt film, so that it is possible to avoid the above-described state where the observation becomes impossible.

【0026】試料2は、試料を走査するXYポジショナ
3に固定されている。XYポジショナは圧電素子を組み
合わせて作製し、水蒸気の浸入を防止するために、アク
チュエータでフッソ樹脂(膜厚:10μm)でコーティ
ングした後、さらにガラス系モールド材で被覆した。4
は探針1を駆動するZ軸方向のアクチュエータである。
探針1のZ軸アクチュエータ4はXYポジショナ3と同
様の圧電素子で作製し、それをフッソ樹脂(膜厚:10
μm)とガラス系モールド材で被覆した。XYポジショ
ナ3とZ軸アクチュエータ4に、フッソ樹脂およびガラ
ス系モールド材を被覆することにより、安定した走査性
を確保することに成功した。
The sample 2 is fixed to an XY positioner 3 which scans the sample. The XY positioner was manufactured by combining piezoelectric elements, and in order to prevent the invasion of water vapor, it was coated with a fluorine resin (film thickness: 10 μm) by an actuator, and then further coated with a glass-based molding material. Four
Is an actuator in the Z-axis direction that drives the probe 1.
The Z-axis actuator 4 of the probe 1 is made of a piezoelectric element similar to that of the XY positioner 3, and is made of a fluorine resin (film thickness: 10
μm) and a glass-based molding material. By covering the XY positioner 3 and the Z-axis actuator 4 with a fluorine resin and a glass-based molding material, it has succeeded in ensuring stable scannability.

【0027】探針駆動用回路系の前置き増幅器5は、探
針/試料間に作用する力の変動を検知する探針変位測定
系からの信号を受け、力すなわち探針の変位が一定とな
るように、Z軸アクチュエータ4を制御するための電気
信号を最終的にZ軸アクチュエータ4に加える主要な役
割を果たしている。前置き増幅器の電気回路部は、セラ
ミック製パッケージ内に真空封入した後、端子に金線を
接続し、さらにガラス容器内に真空管と同様の手法で真
空封入した。2段階の真空封止により前置き増幅回路へ
の水蒸気の浸入と過度の温度上昇を抑制し、探針駆動回
路の安定した動作を保証した。
The preamplifier 5 of the probe driving circuit system receives a signal from the probe displacement measuring system for detecting the fluctuation of the force acting between the probe and the sample, and the force, that is, the displacement of the probe becomes constant. Thus, it plays a major role of finally applying an electric signal for controlling the Z-axis actuator 4 to the Z-axis actuator 4. The electric circuit part of the preamplifier was vacuum-sealed in a ceramic package, gold wires were connected to the terminals, and further vacuum-sealed in a glass container in the same manner as a vacuum tube. The two-stage vacuum sealing suppressed the invasion of water vapor into the pre-amplification circuit and the excessive temperature rise, and ensured the stable operation of the probe drive circuit.

【0028】探針1の変位測定系は、レーザ半導体素子
6と光検出CCD素子7で構成されている。探針1は一
般にカンチレバーと呼ばれる形状であり、探針/試料間
に作用する力の変動を受けて、Z軸方向にたわむ構造と
なっている。探針系のたわみ量を変位測定系により検知
し、たわみ量が一定となるようにZ軸アクチュエータ4
を駆動させる。したがって、変位測定の安定性と精度
が、AFM観察の安定性と精度を決定しているともいえ
る。そこで、レーザ半導体素子6と光検出CCD素子7
を無反射ガラスで作製した容器内に真空封入することに
よって、それら素子の機能劣化を防止するとともに、測
定の安定性を確保した。
The displacement measuring system of the probe 1 is composed of a laser semiconductor element 6 and a photodetection CCD element 7. The probe 1 has a shape generally called a cantilever, and has a structure that bends in the Z-axis direction when a force acting between the probe and the sample is changed. The deflection amount of the probe system is detected by the displacement measuring system, and the Z-axis actuator 4 is controlled so that the deflection amount becomes constant.
Drive. Therefore, it can be said that the stability and accuracy of displacement measurement determine the stability and accuracy of AFM observation. Therefore, the laser semiconductor element 6 and the light detection CCD element 7
By vacuum sealing in a container made of non-reflective glass, the functional deterioration of these elements was prevented and the stability of measurement was secured.

【0029】AFM装置全体は、熱膨張係数が2×10
-8(/℃)と極めて小さいガラス容器8の内に設置し
た。熱膨張係数の小さい容器内に装置全体を設置するこ
とにより、温度変動に伴う、装置系の局部的な歪みを抑
え、AFM観察位置の移動など、いわゆる温度ドリフト
を防止した。AFM直径12cm、高さ15cmの円柱
形のガラス容器には、温度と湿度を調整した空気を送り
込むための流入口9と、流出口10を各10個、合計2
0個設け、容器内の位置による温度,湿度の変動を抑制
した。流入口9には温湿度調節器11を通して温度と相
対湿度を調整した空気が送り込まれる。なお、結露状態
は以下のようにして防止した。試験開始時、温度を試験
温度、相対湿度約5%に調整した乾燥空気をAFM装置
が置かれたガラス容器内に送り込み、ガラス容器内を試
験温度まで加熱する。小型温湿度センサ12により、容
器内が試験温度に達したことを確認した後、流入空気の
湿度を約30分かけて所定の湿度へ増していく。この方
法により、ガラス容器8内の局部的な結露現象は完全に
抑えることができた。また、小型の温湿度センサ12は
探針近傍に6個設置されており、探針近傍の温度と湿度
の変動を測定し、この変動ができるだけ小さくなるよう
に10個の流入口9へ送り込む空気量を調節した。な
お、この空気流入量は温湿度センサ12からの情報によ
り、温湿度調節器11と流入口9との間に設置された空
気量調節用の電磁バルブ13のバルブの開閉状態を抑制
することにより自動的に調整される。これらの工夫を施
すことにより、AFM測定を行う環境内の温度変動を±
0.1℃、湿度変動を±1.0%以内に抑えることが可
能となり、高温高湿下においても安定してAFM測定を
行えるようにした。
The thermal expansion coefficient of the entire AFM apparatus is 2 × 10.
It was installed in a glass container 8 having a very small size of -8 (/ ° C). By installing the entire device in a container having a small thermal expansion coefficient, local distortion of the device system due to temperature fluctuation was suppressed, and so-called temperature drift such as movement of the AFM observation position was prevented. In a cylindrical glass container having an AFM diameter of 12 cm and a height of 15 cm, an inlet 9 for sending air whose temperature and humidity are adjusted, and 10 outlets 10 each, for a total of two.
By providing 0 pieces, fluctuations in temperature and humidity depending on the position in the container were suppressed. Air whose temperature and relative humidity have been adjusted is sent to the inlet 9 through a temperature / humidity controller 11. The dew condensation state was prevented as follows. At the start of the test, dry air whose temperature is adjusted to the test temperature and a relative humidity of about 5% is fed into the glass container in which the AFM device is placed, and the inside of the glass container is heated to the test temperature. After confirming that the inside of the container has reached the test temperature by the small temperature / humidity sensor 12, the humidity of the inflowing air is increased to a predetermined humidity over about 30 minutes. By this method, the local condensation phenomenon in the glass container 8 could be completely suppressed. Further, six small temperature / humidity sensors 12 are installed near the probe, measure temperature and humidity fluctuations near the probe, and send air to the ten inlets 9 so as to minimize the fluctuations. The amount was adjusted. The air inflow amount is controlled by the information from the temperature / humidity sensor 12 by controlling the open / closed state of the electromagnetic valve 13 for adjusting the air amount installed between the temperature / humidity controller 11 and the inlet 9. Adjusted automatically. By taking these measures, the temperature fluctuation in the environment where AFM measurement is performed is ±
It became possible to suppress the fluctuation of humidity at 0.1 ° C. within ± 1.0%, and to enable stable AFM measurement even under high temperature and high humidity.

【0030】探針駆動、試料走査、温湿度センサからの
温湿度情報の入力、電磁バルブの制御、AFM像の測定
と画像処理などはパーソナルコンピュータ14を中心と
した制御測定系により行った。また、15は送風用の空
気ボンベである。
The control measurement system centered on the personal computer 14 was used to drive the probe, scan the sample, input temperature and humidity information from the temperature and humidity sensor, control the electromagnetic valve, measure the AFM image, and perform image processing. Further, reference numeral 15 is an air cylinder for blowing air.

【0031】次に本発明の化学反応の観察・定量化方法
の実施例について説明する。
Next, examples of the method for observing and quantifying chemical reactions of the present invention will be described.

【0032】図2は高温高湿型AFMを用いてソーダラ
イムシリカガラス薄膜の腐食進行過程を温度80℃、相
対湿度80%の下でその場観察した例である。図2
(A)は高温高湿に曝露する前の表面状態(平均あら
さ:0.24nm)、図2(B)は(80℃,80%R
H)に10時間暴露した後の表面状態(平均あらさ:
0.74nm)である。ソーダライムシリカガラス表面
層で進行する腐食現象(ソーダライムシリカガラス中の
ナトリウムが水蒸気や二酸化炭素と反応し、水和した炭
酸ナトリウムが形成される)が表面あらさの変化とし
て、明確に観察できることがわかる。図2に示したソー
ダライムシリカガラスの腐食過程を、暴露時間に伴う表
面あらさ(平均あらさ)の経時変化として定量化した測
定結果を図3に示す。反応の初期段階で直線的に表面あ
らさは増加し、その後飽和する。直線域の傾きを腐食速
度と定義すれば、各温度,湿度条件におけるソーダライ
ムシリカガラス薄膜の腐食速度を求めることができる。
相対湿度80%一定、温度を60〜90℃で変化させた
暴露試験におけるソーダライムシリカガラス薄膜の腐食
速度を表1に示す。
FIG. 2 shows an example of in-situ observation of the progress of corrosion of a soda lime silica glass thin film using a high temperature and high humidity type AFM at a temperature of 80 ° C. and a relative humidity of 80%. Figure 2
(A) is the surface state before exposure to high temperature and high humidity (average roughness: 0.24 nm), and FIG. 2 (B) is (80 ° C., 80% R
H) surface condition after 10 hours exposure (average roughness:
0.74 nm). Corrosion phenomenon that progresses in the surface layer of soda lime silica glass (sodium in soda lime silica glass reacts with water vapor and carbon dioxide to form hydrated sodium carbonate) can be clearly observed as a change in surface roughness. Recognize. FIG. 3 shows the measurement results obtained by quantifying the corrosion process of the soda lime silica glass shown in FIG. 2 as the change over time in surface roughness (average roughness) with exposure time. The surface roughness increases linearly in the initial stage of the reaction and then becomes saturated. By defining the slope of the linear region as the corrosion rate, the corrosion rate of the soda lime silica glass thin film under each temperature and humidity condition can be obtained.
Table 1 shows the corrosion rate of the soda lime silica glass thin film in the exposure test in which the relative humidity is constant at 80% and the temperature is changed at 60 to 90 ° C.

【表1】 表1に示した腐食速度をアレニウスの反応速度式に基づ
いて整理すると、ソーダライムシリカガラス薄膜の腐食
の活性化エネルギーを算出することができる。アレニウ
スの式は V=A×exp(−E/kT) である。ただし、V:反応速度、A:反応速度定数、
E:反応の活性化エネルギー、K:ボルツマン定数、
T:絶対温度である。アレニウスの式に表1の腐食速度
を代入し、最小自乗法によりEを求めると、相対湿度8
0%におけるソーダライムシリカガラス薄膜の腐食活性
化エネルギーは0.95eVと見積もられる。
[Table 1] By arranging the corrosion rates shown in Table 1 based on the Arrhenius reaction rate equation, the activation energy for corrosion of the soda-lime silica glass thin film can be calculated. The Arrhenius equation is V = A × exp (−E / kT). However, V: reaction rate, A: reaction rate constant,
E: reaction activation energy, K: Boltzmann constant,
T: Absolute temperature. Substituting the corrosion rates in Table 1 into the Arrhenius equation and finding E by the method of least squares, the relative humidity is 8
The corrosion activation energy of the soda lime silica glass thin film at 0% is estimated to be 0.95 eV.

【0033】同様の方法により測定した相対湿度80%
における純Coの腐食活性化エネルギーは0.76e
V、純Feのそれは0.60eVであった。また、湿度
すなわち水蒸気に変えて、他の腐食性など反応性ガスを
導入することによって、その雰囲気下で進行する化学反
応のその場観察や反応量を定量化することも可能であ
る。
80% relative humidity measured by the same method
Activation energy of pure Co at 0.76e
V, that of pure Fe was 0.60 eV. In addition, it is possible to quantify the in-situ observation or reaction amount of the chemical reaction that proceeds in the atmosphere by introducing other reactive gas such as corrosiveness instead of humidity, that is, water vapor.

【0034】[0034]

【発明の効果】以上のように本発明の高温高湿型AFM
によつて、従来まったく困難であった高温高湿環境に曝
露した表面についてAFMによるその場観察が可能とな
り、表面反応に関して多くの情報を与える観察装置を提
供できる。
As described above, the high temperature and high humidity type AFM of the present invention
As a result, it becomes possible to perform in-situ observation by AFM on the surface exposed to a high temperature and high humidity environment, which has been difficult at all in the past, and it is possible to provide an observation device which gives a lot of information on the surface reaction.

【0035】また本発明の化学反応の観察・定量化方法
の実施例に示した測定結果は従来の腐食評価法では測定
困難であったものであり、特に100℃以下の温度領域
で生じる反応の活性化エネルギーを測定することは従来
法ではほぼ不可能とされてきた。本測定法は高温高湿型
原子間力顕微鏡を適用することにより、従来法に比較す
ると格段に優れた精度で、しかもその高感度測定を高温
下で行うことを可能とし、反応過程を直接その場観察す
ることと定量化に成功した。
Further, the measurement results shown in the examples of the method for observing and quantifying the chemical reaction of the present invention are difficult to measure by the conventional corrosion evaluation method, and in particular, the reaction occurring in the temperature range of 100 ° C. or lower. It has been considered almost impossible to measure activation energy by the conventional method. By applying a high temperature and high humidity type atomic force microscope, this measurement method makes it possible to perform the highly sensitive measurement at a high temperature at a remarkably superior accuracy as compared with the conventional method, and to directly measure the reaction process. Field observation and quantification were successful.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による高温高湿型原子間力顕微鏡の一実
施例のブロック図である。
FIG. 1 is a block diagram of an embodiment of a high temperature and high humidity type atomic force microscope according to the present invention.

【図2】本発明によるソーダライムシリカガラスの腐食
進行過程を示すその場観察結果を示す写真である。
FIG. 2 is a photograph showing in-situ observation results showing the progress of corrosion of soda lime silica glass according to the present invention.

【図3】本発明によるソーダライムシリカガラスの腐食
進行過程を示す表面あらさの経時変化を示す図である。
FIG. 3 is a view showing a change with time of surface roughness showing a corrosion progressing process of soda lime silica glass according to the present invention.

【符号の説明】[Explanation of symbols]

1 探針 2 試料 3 XYポジショナ 4 Z軸アクチュエータ 5 前置き増幅器 6 レーザ半導体素子 7 光検出CCD素子 8 ガラス容器 9 流入口 10 流出口 11 温湿度調節器 12 小型温湿度センサ 13 電磁バルブ 14 パーソナルコンピュータ 15 空気ボンベ 1 probe 2 sample 3 XY positioner 4 Z-axis actuator 5 preamplifier 6 laser semiconductor element 7 photodetection CCD element 8 glass container 9 inflow port 10 outflow port 11 temperature / humidity controller 12 small temperature / humidity sensor 13 electromagnetic valve 14 personal computer 15 Air cylinder

【手続補正書】[Procedure amendment]

【提出日】平成5年9月29日[Submission date] September 29, 1993

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】図2[Name of item to be corrected] Figure 2

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【図2】 [Fig. 2]

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】温度100℃以下、相対湿度90%以下の
高温高湿環境下で動作するように構成したことを特徴と
する高温高湿型原子間力顕微鏡。
1. A high-temperature and high-humidity atomic force microscope, which is configured to operate in a high-temperature and high-humidity environment having a temperature of 100 ° C. or lower and a relative humidity of 90% or lower.
【請求項2】温度変動を±0.1℃、相対湿度変動を±
1.0%以内に制御した熱膨張係数5×10−8(/
℃)以下のガラスまたは金属容器内に設置したことを特
徴とする請求項1記載の高温高湿型原子間力顕微鏡。
2. A temperature fluctuation of ± 0.1 ° C. and a relative humidity fluctuation of ± 0.1 ° C.
Thermal expansion coefficient controlled within 1.0% 5 × 10 −8 (/
The high temperature and high humidity atomic force microscope according to claim 1, wherein the high temperature and high humidity atomic force microscope is installed in a glass or metal container having a temperature of ℃) or less.
【請求項3】貴金属系薄膜で被覆した探針を備えること
を特徴とする請求項2記載の高温高湿型原子間力顕微
鏡。
3. The high temperature and high humidity atomic force microscope according to claim 2, further comprising a probe covered with a noble metal thin film.
【請求項4】フッソ樹脂およびガラス系モールド材で被
覆した探針駆動用Z軸アクチュエータと、試料走査用X
Yポジショナを備えることを特徴とする請求項3記載の
高温高湿型原子間力顕微鏡。
4. A probe driving Z-axis actuator coated with a fluorine resin and a glass-based molding material, and a sample scanning X-axis.
The high temperature and high humidity atomic force microscope according to claim 3, further comprising a Y positioner.
【請求項5】無反射ガラス容器内に真空封入したレーザ
半導体素子と光検出用CCD素子で探針の変位測定系を
構成したことを特徴とする請求項4記載の高温高湿型原
子間力顕微鏡。
5. A high temperature and high humidity type atomic force according to claim 4, wherein the displacement measuring system of the probe is constituted by a laser semiconductor element vacuum-sealed in a non-reflective glass container and a CCD element for light detection. microscope.
【請求項6】セラミック製パッケージおよびガラス容器
内に真空封入した探針駆動回路用前置き増幅器を備える
ことを特徴とする請求項5記載の高温高湿型原子間力顕
微鏡。
6. The high temperature and high humidity atomic force microscope according to claim 5, further comprising a ceramic package and a preamplifier for a probe driving circuit vacuum-sealed in a glass container.
【請求項7】試料の表面形態、もしくは表面あらさの経
時変化を高温高湿型原子間力顕微鏡あるいは雰囲気制御
型原子間力顕微鏡を用いて測定することを特徴とする化
学反応の観察・定量化方法。
7. Observation and quantification of a chemical reaction characterized by measuring the surface morphology or surface roughness of a sample over time using a high temperature and high humidity atomic force microscope or an atmosphere controlled atomic force microscope. Method.
JP8298592A 1992-03-06 1992-03-06 High-temperature and high-humidity atomic force microscope and observation and quantification of chemical reactions Expired - Fee Related JP2946931B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG97781A1 (en) * 1998-03-11 2003-08-20 Bicc Gen Uk Cables Ltd Method of and apparatus for detecting cable oversheath faults and installations in which they are used
US7371431B2 (en) * 2000-04-04 2008-05-13 Schott Ag Method for producing small, sheet glass plates and larger sheet glass plates as semifinished products for producing the former
JP2008111735A (en) * 2006-10-31 2008-05-15 Sii Nanotechnology Inc Sample handling device
JP2008232983A (en) * 2007-03-23 2008-10-02 Jeol Ltd SPM and SPM measurement method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG97781A1 (en) * 1998-03-11 2003-08-20 Bicc Gen Uk Cables Ltd Method of and apparatus for detecting cable oversheath faults and installations in which they are used
US7371431B2 (en) * 2000-04-04 2008-05-13 Schott Ag Method for producing small, sheet glass plates and larger sheet glass plates as semifinished products for producing the former
JP2008111735A (en) * 2006-10-31 2008-05-15 Sii Nanotechnology Inc Sample handling device
JP2008232983A (en) * 2007-03-23 2008-10-02 Jeol Ltd SPM and SPM measurement method

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