JPH06136529A - Magnetron sputtering device - Google Patents

Abstract

(57) [Summary] [Objective] To provide a magnetron sputtering apparatus with improved target utilization efficiency. In a magnetron sputtering apparatus having a cathode portion including a target, a magnet installed below the target, and a yoke forming a bottom substrate of the magnet, a cathode short side cross section on both outer magnetic poles is L-shaped. The magnetic material is installed so that the recesses of the magnetic material face each other, the magnetic material having a convex cross section on the short side of the cathode is installed on the central magnetic pole, and the cross section of the short side of the cathode is L-shaped on both ends of the target. Install so that the dents of the magnetic body face each other,
At the center of the target, a magnetic material having a convex cross section on the short side of the cathode is placed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus, and more particularly to a magnetron sputtering apparatus with improved utilization efficiency of a non-magnetic target.

[0002]

2. Description of the Related Art In a conventional general magnetron sputtering apparatus, as shown in FIG. 10, in a magnetron sputtering apparatus, a substrate holder 8 attached to an upper portion of a container and particles sputtered attached to a lower portion of the substrate holder 8 are It has a substrate 9 to be attached, a target 10 which is arranged below the substrate 9 and whose particles are sputtered, and a permanent magnet (or electromagnet) 11 which is placed below the target 10 at a slight distance. In the figure, reference numeral 12 is a magnetic field line, 13 is a target state (erosion) after sputtering, 14 is sputtered particles, and 15 is an inert gas (Ar or the like).

As described above, in the magnetron sputtering apparatus, a permanent magnet (or an electromagnet) is installed below the target so that a magnetic field is generated on the surface of the target 10. The magnetic field forms plasma directly above the target and confines it in this plasma. The ionized and sputtered particles are made to fly and adhere to the substrate arranged above the target.

However, in the conventional magnetron sputtering apparatus, the target after sputtering was locally consumed as shown by 13 in FIG. 10, and the utilization efficiency of the target was extremely poor. Thus, in order to prevent the target material from being locally sputtered and to improve the utilization efficiency of the target, it is necessary to make the horizontal magnetic field directly above the target uniform over a wide range and weaken the strength of the vertical magnetic field.

In order to make the horizontal magnetic field just above the target uniform over a wide range, according to Japanese Patent Publication No. 03-73633, there is a means for disposing magnetic bodies on the central magnetic pole and both outer magnetic poles. Further, in order to weaken the strength of the vertical magnetic field directly above the target, there is a means for installing a soft magnetic material between the central magnetic pole and both outer magnetic poles according to Japanese Patent Laid-Open No. 01-279754.

[0006]

However, when a magnetic material is installed on the central magnetic pole and both outer magnetic poles, the strength of the vertical magnetic field in the vicinity of the magnetic pole becomes large, so that the utilization efficiency of the target is greatly improved. It is not allowed. Further, when a soft magnetic material is installed between the central magnetic pole and both outer magnetic poles, the vertical magnetic field strength is weak, but the uniform range of the horizontal magnetic field strength is narrow, so that the target utilization efficiency is not significantly improved. unacceptable. Therefore, an object of the present invention is to provide a magnetron sputtering apparatus having a cathode part in which a horizontal magnetic field is made uniform over a wide range of the target in order to improve the utilization efficiency of the target and the vertical magnetic field on the target surface has a small intensity. Is.

[0007]

In order to achieve the above object, the present invention provides a magnetron sputter having a cathode portion including a target, a magnet installed below the target, and a yoke constituting a bottom substrate of the magnet. In the device, the indented portions of a magnetic body (referred to as an L-shaped magnetic body on the magnetic pole side) having an L-shaped cross section on the cathode short side side on both outer magnetic poles are installed so as to face each other, and the cathode short side on the central magnetic pole side. A magnetic body having a convex cross section (referred to as a magnetic pole side convex magnetic body) is installed, and further, a magnetic body having a L-shaped cross section on the cathode short side side on both sides of the target (target side L type magnetic body and It is characterized in that the dents (referred to as ") are installed so as to face each other, and a magnetic body having a convex cross-section on the cathode short side side (referred to as a target-side convex magnetic body) is installed in the center of the target.

[0008]

1 is a view showing a short side cross section of the cathode portion.
As shown in FIG. 1, in the cathode structure of the magnetron sputtering apparatus of the present invention, a permanent magnet 1 that is a central magnetic pole is installed, and permanent magnets 2 that are outer magnetic poles are installed on both sides of the permanent magnet 1 with a space therebetween. 1, a magnetic pole side convex magnetic body 3 is installed on the top of the magnetic pole side L, a magnetic pole side L type magnetic body 4 is installed on the top of the permanent magnet 2, and a target 7 is installed above them. The side L-shaped magnetic body 6 is installed, and the target-side convex magnetic body 5 is installed in the center of the target 7. It is desirable that the outer surfaces of the permanent magnet 2, the magnetic pole side L-type magnetic body 4, and the target side L-type magnetic body 6 be aligned substantially vertically, and the permanent magnet 1 and the magnetic pole side convex magnetic body 3 should be aligned. The center of the target-side convex magnetic body 5 needs to be substantially aligned.

In the present invention, the length ratios of the magnetic pole side convex magnetic body 3 and the target side convex magnetic body 5 in the above structure are set to a ₁ / b ₁ and c ₁ / d ₁ , respectively, and the magnetic pole side L Type magnetic body 4,
The ratio of the lengths of the target-side L-type magnetic body 6 is a
_{If 2} / b ₂ and c ₂ / d ₂ are used, it is preferable that they are respectively set as follows. a ₁ / b ₁ = 1 to 7/3 c ₁ / d ₁ = 3/14 to 1/3 a ₂ / b ₂ = 1 to 7/3 c ₂ / d ₂ = 1 to 3/2 wide range of target It is suitable for making the horizontal magnetic field uniform over the entire area and reducing the intensity of the vertical magnetic field.

[0010]

EXAMPLE In the magnetron sputtering apparatus shown in FIG. 1, the length ratios a ₁ / b ₁ and c ₁ / d _{1 of} the magnetic pole side convex magnetic body 3 and the target side convex magnetic body 5 respectively, and the magnetic pole side L The ratio of the lengths of the type magnetic body 4 and the target-side L-type magnetic body 6 is a ₂ / b ₂ and c ₂ / d ₂ is a ₁ /
b ₁ = 1, c ₁ / d ₁ = 1/3, a ₂ / b ₂ = 1, c ₂
/ D ₂ = 3/2 was set. As shown in FIG. 2, the horizontal component of the magnetic field on the surface of the target at this time has a strength of about 1000 gauss, and an error of about 10% makes about 80% or more of the target uniform. As for the vertical component of the magnetic field on the target surface, as shown in FIG. 3, about 80% or more of the target had an intensity of ± 700 gauss or less.

(Comparative Example 1) For comparison with the present invention, a central magnetic pole, such as the magnetron sputtering apparatus shown in FIG.
A magnetic material was installed on both outer magnetic poles. The horizontal component of the magnetic field on the target surface at this time is about 170 as shown in FIG.
Approximately 60% of the target with an error of about 10% at an intensity of 0 Gauss
% Part became uniform. Further, the vertical component of the magnetic field on the target surface is about 40% of the target as shown in FIG.
The intensity of the part marked with ± 700 gauss or less.

(Comparative Example 2) Further, as in the magnetron sputtering apparatus shown in FIG. 7, a soft magnetic material was placed between the central magnetic pole and both outer magnetic poles. As shown in FIG. 8, the horizontal component of the magnetic field on the surface of the target at this time has an intensity of about 800 gauss, and about 60% of the target becomes uniform with an error of about 10%. Further, as shown in FIG. 9, the vertical component of the magnetic field on the surface of the target is ± 70 at about 80% of the target.
The intensity was below 0 gauss.

[0013]

As described above, according to the present invention,
Makes the horizontal magnetic field uniform over a wide range of the target,
In addition, the strength of the vertical magnetic field on the target surface can be reduced.

[Brief description of drawings]

FIG. 1 is a short side sectional view showing a preferred cathode structure of a magnetron sputtering apparatus of the present invention.

FIG. 2 is a graph showing a horizontal component of a magnetic field with respect to a target when the magnetron sputtering apparatus of the present invention is used.

FIG. 3 is a graph showing a vertical component of a magnetic field with respect to a target when the magnetron sputtering apparatus of the present invention is used.

FIG. 4 is a short side sectional view showing a cathode structure of a conventionally used magnetron sputtering apparatus.

5 is a graph showing a horizontal component of a magnetic field with respect to a target when the magnetron sputtering apparatus of FIG. 4 is used.

6 is a graph showing a vertical component of a magnetic field with respect to a target when the magnetron sputtering apparatus of FIG. 4 is used.

FIG. 7 is a short side sectional view showing a cathode structure of a conventionally used magnetron sputtering apparatus.

8 is a graph showing a horizontal component of a magnetic field with respect to a target when the magnetron sputtering apparatus of FIG. 7 is used.

9 is a graph showing a vertical component of a magnetic field with respect to a target when the magnetron sputtering apparatus of FIG. 7 is used.

FIG. 10 is a schematic cross-sectional view showing an entire magnetron sputtering apparatus which has been conventionally generally used.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 permanent magnet or electromagnet 2 permanent magnet or electromagnet 3 magnetic body 4 magnetic body 5 magnetic body 6 magnetic body 7 target 10 target 11 permanent magnet or electromagnet 16 permanent magnet or electromagnet 17 target 18 magnetic body 19 permanent magnet or electromagnet 20 soft magnetic body 21 target 22 yoke

Claims (1)

[Claims] 1. A magnetron sputtering apparatus having a cathode portion comprising a target, a magnet installed below the target, and a yoke constituting a bottom substrate of the magnet, wherein an L-shaped cross section of the short side of the cathode is formed on both outer magnetic poles. The magnetic material is installed so that the dents of the magnetic material face each other, and the magnetic material having a convex cross section on the short side of the cathode is installed on the central magnetic pole. Furthermore, the cross section of the short side on the cathode side is L-shaped on both ends of the target. A magnetron sputtering apparatus, characterized in that recessed portions of a magnetic body, which is a mold, are installed so as to face each other, and a magnetic body having a convex cross-section on the short side of the cathode is installed in the center of the target.