JPH06140401A - Integrated circuit device - Google Patents
Integrated circuit deviceInfo
- Publication number
- JPH06140401A JPH06140401A JP28896592A JP28896592A JPH06140401A JP H06140401 A JPH06140401 A JP H06140401A JP 28896592 A JP28896592 A JP 28896592A JP 28896592 A JP28896592 A JP 28896592A JP H06140401 A JPH06140401 A JP H06140401A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- barrier material
- carbon
- circuit device
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(57)【要約】
【目的】 集積回路装置における基板上のＣｕ配線表面
から周辺へのＣｕ拡散を防止するバリア材料及びその配
線構造を得ることを目的とする。
【構成】 基板１上に形成するＣｕ配線４表面の全面、
あるいは一部を固体炭素のバリア材料膜３、５で被覆す
るように構成し、このバリア材料となる固体炭素として
は、ダイヤモンド、黒鉛、アモルファス状炭素、ダイヤ
モンド状炭素、又は水素原子を有する状態では水素化ア
モルファス炭素（水素含有固体炭素）などを用いること
で、Ｃｕ配線表面から周辺へのＣｕ拡散を防止する。
(57) [Abstract] [Purpose] An object of the present invention is to obtain a barrier material and a wiring structure thereof which prevent Cu diffusion from the Cu wiring surface on the substrate to the periphery in an integrated circuit device. [Structure] The entire surface of the Cu wiring 4 formed on the substrate 1,
Alternatively, a part of the solid carbon barrier material films 3 and 5 may be coated, and the solid carbon serving as the barrier material may be diamond, graphite, amorphous carbon, diamond-like carbon, or in a state having hydrogen atoms. By using hydrogenated amorphous carbon (hydrogen-containing solid carbon) or the like, Cu diffusion from the Cu wiring surface to the periphery is prevented.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、基板上にＣｕあるい
はＣｕ合金の配線を有する集積回路装置に関し、特に、
このＣｕ配線の活性な表面から周辺へのＣｕ拡散を防止
する技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit device having a wiring of Cu or Cu alloy on a substrate, and in particular,
The present invention relates to a technique for preventing Cu diffusion from the active surface of the Cu wiring to the periphery.
【０００２】[0002]
【従来の技術】従来から一般に、例えば半導体等の集積
回路装置の配線材料として、Ａｌや、このＡｌの合金が
使用されているが、このＡｌを直接配線材料として用い
た場合、集積回路装置の集積度向上による配線幅の微細
化に伴って、配線や、その上下の絶縁層、保護層との間
の応力に起因するストレスマイグレーションによる配線
劣化・断線、あるいはエレクトロマイグレーション現象
による配線通電中の劣化、切断が発生していた。2. Description of the Related Art Conventionally, Al or an alloy of Al has been generally used as a wiring material for integrated circuit devices such as semiconductors. Along with the miniaturization of the wiring width due to the increase in the degree of integration, wiring deterioration and disconnection due to stress migration caused by stress between the wiring and the insulating layers above and below it, and the protective layer, or deterioration during wiring energization due to electromigration phenomenon , Disconnection had occurred.
【０００３】そこで、従来は、例えば特開昭５８−２０
２５５１号公報にＡｌ中にＣｕ等の元素を加えてこのＡ
ｌ自身の耐性を向上させる方法が示されており、また、
特開平２−１１９１４０号公報にはＡｌ合金に代えてＣ
ｕあるいはＣｕ合金を配線材料として用いることが示さ
れている。Therefore, in the past, for example, Japanese Patent Laid-Open No. 58-20 has been proposed.
In the 2551 publication, an element such as Cu is added to Al
l has shown how to improve its own tolerance, and
In Japanese Patent Laid-Open No. 2-119140, C is used instead of Al alloy.
It has been shown to use u or Cu alloy as a wiring material.
【０００４】これは、ＣｕのほうがＡｌに比べて、より
低抵抗であることによりジュール発熱による温度上昇が
小さい上に伝送遅延時間も小さく、より高融点であるこ
とにより温度強度が高く、さらに、より原子量が大きい
ことによりエレクトロマイグレーションやストレスマイ
グレーションが起こりにくいことによる。This is because Cu has a lower resistance than Al, so that the temperature rise due to Joule heat generation is small, the transmission delay time is small, and the higher melting point has a higher temperature strength. This is because electromigration and stress migration are less likely to occur due to the larger atomic weight.
【０００５】しかし、Ｃｕを配線材料として用いる場
合、Ｃｕ拡散によりこの配線周囲（例えばＳｉ基板や絶
縁膜としてのＳｉＯ2 ）を汚染し、正常な回路動作が妨
げられるので、このＣｕ拡散を防止すべく、バリア材料
として、例えば特開昭６３−７３６４５号公報にはＴｉ
Ｎ、ＴｉＷ、特開平１−１０６４３５号公報にはＺｒ、
Ｖ、Ｔａ、Ｎｂ、特開平１−２０２８４１号公報にはＭ
ｏ、Ｃｒ、Ｗ、等の各種材料が提案されている。However, when Cu is used as a wiring material, Cu diffusion is contaminated around the wiring (for example, Si substrate or SiO 2 as an insulating film) and normal circuit operation is disturbed, so Cu diffusion is prevented. Therefore, as a barrier material, for example, in JP-A-63-73645, Ti is used.
N, TiW, Zr in JP-A-1-106435,
V, Ta, Nb, M in Japanese Patent Laid-Open No. 1-202841
Various materials such as o, Cr, and W have been proposed.
【０００６】[0006]
【発明が解決しようとする課題】従来の集積回路装置は
以上のように、基板上に形成する配線材料としてＣｕあ
るいはＣｕ合金を用いる場合、Ｃｕ拡散を防止すべく各
種バリア材料でこのＣｕ配線を被覆していたが、Ｃｕ原
子の原子半径が小さいためにすでに提案されているバリ
ア材料では十分なバリア性が確保できないなどの課題が
あった。As described above, in the conventional integrated circuit device, when Cu or Cu alloy is used as the wiring material formed on the substrate, the Cu wiring is covered with various barrier materials to prevent Cu diffusion. Although it was covered, there was a problem that sufficient barrier properties could not be secured with the barrier material already proposed because the atomic radius of Cu atoms was small.
【０００７】また、最近の集積度の向上に伴う微細化に
対応するためには、ＰＶＤプロセスの適用には限界があ
るためＣＶＤプロセスの適用も可能であることが望まし
いが、多くの金属材料へのＣＶＤ技術の適用は困難であ
るなどの課題があった。Further, in order to cope with the recent miniaturization associated with the improvement in the degree of integration, it is desirable that the CVD process can be applied because the application of the PVD process is limited. However, there is a problem that it is difficult to apply the CVD technique.
【０００８】この発明は上記のような課題を解決するた
めになされたもので、集積回路装置における基板上のＣ
ｕ配線表面から周辺へのＣｕ拡散を防止するバリア材料
及びその配線構造を得ることを目的とする。The present invention has been made in order to solve the above-mentioned problems, and C on a substrate in an integrated circuit device is used.
It is an object of the present invention to obtain a barrier material and a wiring structure thereof that prevent Cu diffusion from the u wiring surface to the periphery.
【０００９】[0009]
【課題を解決するための手段】この発明に係る集積回路
装置は、基板上に形成するＣｕ配線表面の全面、あるい
は一部を固体炭素のバリア材料膜で被覆するように構成
しており、このバリア材料となる固体炭素としては、ダ
イヤモンド、黒鉛、アモルファス状炭素、又はダイヤモ
ンド状炭素などを用いる。The integrated circuit device according to the present invention is constructed such that the entire surface or a part of the surface of Cu wiring formed on a substrate is covered with a solid carbon barrier material film. As the solid carbon used as the barrier material, diamond, graphite, amorphous carbon, diamond-like carbon, or the like is used.
【００１０】また、この固体炭素は水素原子を有する状
態（水素含有固体炭素）も含み、水素化アモルファス炭
素などを用いる。This solid carbon also includes a state having hydrogen atoms (hydrogen-containing solid carbon), and hydrogenated amorphous carbon or the like is used.
【００１１】[0011]
【作用】この発明における集積回路装置は、Ｃｕ配線表
面の全面、あるいは一部をバリア材料で被覆するように
構成したので、基板上の平面配線のみならず、立体配線
の場合についてもＣｕ拡散の影響を防止することができ
る。In the integrated circuit device according to the present invention, the entire surface or a part of the Cu wiring surface is covered with the barrier material. Therefore, not only the plane wiring on the substrate but also the three-dimensional wiring can diffuse Cu. The influence can be prevented.
【００１２】また、バリア材料として用いるダイヤモン
ド、黒鉛、アモルファス状炭素、ダイヤモンド状炭素、
又は水素化アモルファス炭素などの固体炭素は、従来の
バリア材料と比較して原子間の結合距離が短く、その構
造も緻密であるので、Ｃｕ拡散を防止しやすいという特
性がある（なお、その他にも化学的に安定なので耐湿性
等の保護性も優れている）。Further, diamond, graphite, amorphous carbon, diamond-like carbon used as a barrier material,
Alternatively, solid carbon such as hydrogenated amorphous carbon has a characteristic that a bond distance between atoms is shorter than that of a conventional barrier material and a structure thereof is dense, so that Cu diffusion can be easily prevented. Is also chemically stable and has excellent protection properties such as moisture resistance).
【００１３】具体的には、ダイヤモンドは最も結晶構造
が緻密であり、アモルファス状炭素、ダイヤモンド状炭
素、又は水素化アモルファス炭素などは結晶粒界がない
ために、粒界拡散も防止できる。また、黒鉛は伝導性を
有するために半導体基板（例えばシリコン基板）へのコ
ンタクト部のバリア材料として用いることができる。Specifically, diamond has the most dense crystal structure, and amorphous carbon, diamond-like carbon, hydrogenated amorphous carbon, or the like has no crystal grain boundary, so that grain boundary diffusion can be prevented. Further, since graphite has conductivity, it can be used as a barrier material for a contact portion with a semiconductor substrate (for example, a silicon substrate).
【００１４】[0014]
【実施例】以下、この発明の一実施例を図１を用いて説
明する。なお、図中同一部分には同一符号を付して説明
を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. In the figure, the same parts are designated by the same reference numerals and the description thereof will be omitted.
【００１５】図１は、この発明に係る集積回路装置の配
線形成過程を説明する断面図であり、まず、半導体基板
１であるＳｉ基板上にＰＳＧ等の絶縁膜２を形成し、そ
の表面にＲＦプラズマＣＶＤ等によって固体炭素のバリ
ア材料膜３を成長させる。FIG. 1 is a sectional view for explaining a wiring forming process of an integrated circuit device according to the present invention. First, an insulating film 2 such as PSG is formed on a Si substrate which is a semiconductor substrate 1, and the surface thereof is formed. The solid carbon barrier material film 3 is grown by RF plasma CVD or the like.
【００１６】この固体炭素の堆積は、例えばダイヤモン
ド状炭素の場合、ＲＦプラズマＣＶＤにより、メタン１
０％、水素８０％、全圧１００ｍＴｏｒｒ、基板温度２
００℃の条件下で行う。また、ダイヤモンドの場合に
は、マイクロ波プラズマＣＶＤにより、メタン１％、水
素９９％、全圧４０Ｔｏｒｒ、基板温度７００℃の条件
下で行う。This solid carbon is deposited, for example, in the case of diamond-like carbon, by RF plasma CVD using methane 1
0%, hydrogen 80%, total pressure 100 mTorr, substrate temperature 2
It is performed under the condition of 00 ° C. In the case of diamond, microwave plasma CVD is performed under the conditions of methane 1%, hydrogen 99%, total pressure 40 Torr, and substrate temperature 700 ° C.
【００１７】続いて、その表面（バリア材料膜３の表
面）にＲＦマグネトロンスパッタリングによって配線材
料となる純Ｃｕ膜を成長させ、パターニングすることで
Ｃｕ配線４を形成する。Subsequently, a pure Cu film serving as a wiring material is grown on the surface (the surface of the barrier material film 3) by RF magnetron sputtering and patterned to form a Cu wiring 4.
【００１８】そして、このバリア材料膜３の側面と、Ｃ
ｕ配線４の表面（上部及び側面部）にもバリア材料膜５
を被覆させ、最後に、層間絶縁膜６を形成してＣｕ配線
構造を完成させる。The side surface of the barrier material film 3 and C
The barrier material film 5 is also formed on the surface (upper and side surfaces) of the u wiring 4.
And finally, an interlayer insulating film 6 is formed to complete the Cu wiring structure.
【００１９】ここで、形成されたＣｕ配線４に対するバ
リア性を検証するため、一実施例としてシリコン基板状
に膜厚１０００Åのダイヤモンド状炭素を積層し、さら
に膜厚１μｍのＣｕを積層して８５０℃の水素雰囲気中
で３時間アニールを行った後、このＣｕとダイヤモンド
状炭素を部分的に除去して露出されたシリコンをＳｅｃ
ｃｏエッチ（このＳｅｃｃｏはＳｉのエッチング試薬と
して一般的なもので、ＳｅｃｃｏエッチはこのＳｅｃｃ
ｏ試薬によるエッチングのことをいう）を行い、シリコ
ン基板表面をＳＥＭ観察した。Here, in order to verify the barrier property with respect to the formed Cu wiring 4, as an example, diamond-like carbon having a film thickness of 1000 Å is laminated on a silicon substrate, and Cu having a film thickness of 1 μm is further laminated 850. After annealing in a hydrogen atmosphere at ℃ for 3 hours, Cu and diamond-like carbon are partially removed to expose the exposed silicon to Sec.
co etch (this Secco is a general etching reagent for Si, and Secco etch is this Secc
o Etching with a reagent) was performed and the surface of the silicon substrate was observed by SEM.
【００２０】同様に、比較する従来技術としてはバリア
材料にＴｉＮを用いて試料を作成し、シリコン基板表面
をＳＥＭ観察した。Similarly, as a conventional technique for comparison, a sample was prepared using TiN as a barrier material, and the surface of the silicon substrate was observed by SEM.
【００２１】この結果、本発明ではＣｕの析出に起因す
る欠陥は確認できなかったのに対し、従来技術では０．
３個／μｍ2 の高い密度でエッチピットが検出された。As a result, in the present invention, defects due to the precipitation of Cu could not be confirmed, whereas in the prior art, the defects of 0.
Etch pits were detected at a high density of 3 / μm 2 .
【００２２】なお、この実施例では図１に示すような集
積回路装置について、その構造と製造プロセスを説明し
たが、特にこの構造に限定されるものではなく、例えば
コンタクトやヴィア等にＣｕが用いられる場合には、そ
の構造が変更されるのは言うまでもない。In this embodiment, the structure and manufacturing process of the integrated circuit device as shown in FIG. 1 have been described. However, the structure is not limited to this structure. For example, Cu is used for contacts and vias. It goes without saying that the structure will be changed if it is done.
【００２３】この実施例ではＣｕ配線４の表面全体を固
体炭素からなるバリア材料膜３、５で被覆したが、被覆
部位は特に限定されず、配線下地側のみであっても周辺
側のみであっても良い。In this embodiment, the entire surface of the Cu wiring 4 was covered with the barrier material films 3 and 5 made of solid carbon. However, the covering portion is not particularly limited, and the wiring wiring base side only or the peripheral side only. May be.
【００２４】この場合、シリコン基板１へのコンタクト
部では、このシリコン基板と接する部分にＮｂ、Ｍｏ、
Ｔａ、Ｗ、ＴｉＮ等の伝導性を有するバリア材料を用い
ることもでき、また、この発明に係るバリア材料である
固体炭素に、黒鉛、硼素（Ｂ）等をドープすることで適
当な伝導性を持たせても良い。In this case, in the contact portion with the silicon substrate 1, Nb, Mo,
It is also possible to use a barrier material having conductivity such as Ta, W, and TiN. Further, solid carbon, which is the barrier material according to the present invention, is doped with graphite, boron (B), or the like so as to have appropriate conductivity. You may have it.
【００２５】また、この発明に係るバリア材料である固
体炭素（水素含有固体炭素を含む概念）の形成方法は特
に限定されず、公知の形成方法を用いることができる。
例えば特開昭５８−１１０４９４号公報に示されたよう
に、ダイヤモンド、ダイヤモンド状炭素、アモルファス
状炭素、水素化アモルファス炭素などは、いずれも炭化
水素と水素の混合物をプラズマ処理することで得られ、
また、スパッタ蒸着法、抵抗加熱蒸着法、電子ビーム蒸
着法、イオンビーム蒸着法等の物理気相蒸着法（ＰＶ
Ｄ）によっても蒸着できる。The method of forming solid carbon (concept including hydrogen-containing solid carbon) which is the barrier material according to the present invention is not particularly limited, and a known forming method can be used.
For example, as shown in JP-A-58-110494, diamond, diamond-like carbon, amorphous carbon, hydrogenated amorphous carbon, etc. are all obtained by plasma-treating a mixture of hydrocarbon and hydrogen,
Also, physical vapor deposition methods such as sputter deposition method, resistance heating deposition method, electron beam deposition method, ion beam deposition method (PV
It can also be vapor-deposited by D).
【００２６】[0026]
【発明の効果】以上のようにこの発明によれば、基板上
に形成するＣｕ配線表面の全面、あるいは一部を固体炭
素のバリア材料膜で被覆するように構成しており、この
バリア材料となる固体炭素として、ダイヤモンド、黒
鉛、アモルファス状炭素、又はダイヤモンド状炭素など
を用い、さらに水素含有固体炭素として水素化アモルフ
ァス炭素などを用いるようにしたので、Ｃｕ拡散を有効
に防止し、配線の信頼性を向上させるとともに、当該集
積回路装置の寿命・信頼性を向上させるなどの効果があ
る。As described above, according to the present invention, the whole or part of the surface of the Cu wiring formed on the substrate is covered with the solid carbon barrier material film. Since diamond, graphite, amorphous carbon, or diamond-like carbon is used as the solid carbon, and hydrogenated amorphous carbon is used as the hydrogen-containing solid carbon, Cu diffusion is effectively prevented and the reliability of the wiring is improved. And the life and reliability of the integrated circuit device are improved.
【図１】この発明に係る集積回路装置の配線形成過程を
説明する断面図である。FIG. 1 is a cross-sectional view illustrating a wiring forming process of an integrated circuit device according to the present invention.
１…半導体基板、２…絶縁膜、３、５…バリア材料膜、
４…Ｃｕ配線、６…層間絶縁膜。1 ... Semiconductor substrate, 2 ... Insulating film, 3, 5 ... Barrier material film,
4 ... Cu wiring, 6 ... Interlayer insulating film.
Claims (4)
において、 前記Ｃｕ配線表面の全面、あるいは該Ｃｕ配線表面の一
部を、バリア材料膜として固体炭素膜で被覆したことを
特徴とする集積回路装置。1. An integrated circuit device having Cu wiring on a substrate, wherein the entire surface of the Cu wiring or a part of the surface of the Cu wiring is covered with a solid carbon film as a barrier material film. Circuit device.
であることを特徴とする請求項１記載の集積回路装置。2. The integrated circuit device according to claim 1, wherein the solid carbon film is a hydrogen-containing solid carbon film.
ンド、黒鉛、アモルファス状炭素、あるいはダイヤモン
ド状炭素からなることを特徴とする請求項１記載の集積
回路装置。3. The integrated circuit device according to claim 1, wherein the solid carbon film is made of at least diamond, graphite, amorphous carbon, or diamond-like carbon.
水素化アモルファス炭素からなることを特徴とする請求
項２記載の集積回路装置。4. The integrated circuit device according to claim 2, wherein the hydrogen-containing solid carbon film is made of at least hydrogenated amorphous carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288965A JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288965A JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06140401A true JPH06140401A (en) | 1994-05-20 |
| JP2997371B2 JP2997371B2 (en) | 2000-01-11 |
Family
ID=17737095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4288965A Expired - Lifetime JP2997371B2 (en) | 1992-10-27 | 1992-10-27 | Integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2997371B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100243286B1 (en) * | 1997-03-05 | 2000-03-02 | 윤종용 | Method for manufacturing a semiconductor device |
| US6482741B1 (en) | 1997-06-25 | 2002-11-19 | Nec Corporation | Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method fabricating the same |
| JP2007173816A (en) * | 2005-12-19 | 2007-07-05 | Samsung Electronics Co Ltd | Metal wiring, manufacturing method thereof, display substrate having the same, and manufacturing method thereof |
| JP2008182174A (en) * | 2006-12-28 | 2008-08-07 | Tokyo Electron Ltd | Semiconductor device and manufacturing method thereof |
| JP2015220348A (en) * | 2014-05-19 | 2015-12-07 | サンケン電気株式会社 | Semiconductor device |
-
1992
- 1992-10-27 JP JP4288965A patent/JP2997371B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100243286B1 (en) * | 1997-03-05 | 2000-03-02 | 윤종용 | Method for manufacturing a semiconductor device |
| US6482741B1 (en) | 1997-06-25 | 2002-11-19 | Nec Corporation | Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method fabricating the same |
| US6486559B1 (en) | 1997-06-25 | 2002-11-26 | Nec Corporation | Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method of fabricating the same |
| JP2007173816A (en) * | 2005-12-19 | 2007-07-05 | Samsung Electronics Co Ltd | Metal wiring, manufacturing method thereof, display substrate having the same, and manufacturing method thereof |
| KR101235135B1 (en) * | 2005-12-19 | 2013-02-20 | 삼성디스플레이 주식회사 | Metal line, method of manufacturing the same, display substrate having the same and method of manufacturing the display substrate |
| JP2008182174A (en) * | 2006-12-28 | 2008-08-07 | Tokyo Electron Ltd | Semiconductor device and manufacturing method thereof |
| JP2015220348A (en) * | 2014-05-19 | 2015-12-07 | サンケン電気株式会社 | Semiconductor device |
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|---|---|
| JP2997371B2 (en) | 2000-01-11 |
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