JPH0616848A - Gas-barrier film and its production - Google Patents
Gas-barrier film and its productionInfo
- Publication number
- JPH0616848A JPH0616848A JP3163829A JP16382991A JPH0616848A JP H0616848 A JPH0616848 A JP H0616848A JP 3163829 A JP3163829 A JP 3163829A JP 16382991 A JP16382991 A JP 16382991A JP H0616848 A JPH0616848 A JP H0616848A
- Authority
- JP
- Japan
- Prior art keywords
- film
- inorganic
- gas barrier
- barrier film
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010408 film Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000002985 plastic film Substances 0.000 claims abstract description 9
- 229920006255 plastic film Polymers 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229920002799 BoPET Polymers 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 229910052911 sodium silicate Inorganic materials 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 235000019795 sodium metasilicate Nutrition 0.000 abstract 1
- 239000000463 material Substances 0.000 description 22
- 238000007740 vapor deposition Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 235000013305 food Nutrition 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- 229910010055 TiB Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Wrappers (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はレトルト食品等の放送用
フィルムに用いられるガスバリアフィルムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas barrier film used as a broadcasting film for retort foods and the like.
【０００２】従来、ドライプロセスによるガスバリアフ
ィルムとしては、Ａ１蒸着フィルム等がある。構造とし
てはプラスチックフィルムの少なくとも片面上にＡ１を
１０００オグストローム程度蒸着した物を表面ハードコ
ート及びラミネートして、食品包装用フィルムに用いら
れている。しかし、Ａ１コート蒸着によるガスバリア性
は１〜１０ｃｃ／ｍ2 ・２４ｈｒ・ａｔｍ程度である。Conventionally, as a gas barrier film by a dry process, there is an A1 vapor deposition film and the like. As a structure, a plastic film having at least one surface on which A1 is vapor-deposited in a thickness of about 1000 Å is hard-coated on the surface and laminated to be used as a film for food packaging. However, the gas barrier property by A1 coat vapor deposition is about 1 to 10 cc / m 2 · 24 hr · atm.
【０００３】無機酸化物のガスバリアフィルムとして
は、ＳｉＯの蒸着フィルムがある。構造としては、プラ
スチックフィルムの少なくとも片面上にＳｉＯを７００
オグストローム程度蒸着したものを表面ハードコート及
びラミネートして食品包装用フィルムに用いられてい
る。しかし、ＳｉＯは材料費が高く、コストがかかりす
ぎる。又、Ｓｉ、ＳｉＯ、ＳｉＯ2 の混合材料による蒸
着法では、材料の飛散、真空度の上昇等により、緻密な
構造を有する無機酸化物薄膜は得られていない。又、ガ
スバリア性も１〜１０ｃｃ／ｍ2 ・２４ｈｒ・ａｔｍ程
度である。As a gas barrier film of an inorganic oxide, there is a vapor deposition film of SiO. As a structure, 700 or more of SiO is formed on at least one surface of the plastic film.
It is used as a film for food packaging by depositing a film having a thickness of about angstrom and applying a hard coat on the surface and laminating it. However, SiO has a high material cost and is too expensive. Further, in the vapor deposition method using a mixed material of Si, SiO, and SiO 2 , an inorganic oxide thin film having a dense structure has not been obtained due to the scattering of the material, the increase in the degree of vacuum, and the like. Also, the gas barrier property is about 1 to 10 cc / m 2 · 24 hr · atm.
【０００４】[0004]
【発明が解決しようとする課題】本発明の課題は蒸着時
の蒸着材料の飛散がなく、酸素バリア性が１ｃｃ／ｍ2
・２４ｈｒ・ａｔｍを有する程度に緻密な構造を有する
無機酸化物薄膜をプラスチックフィルムに積層されたフ
ィルムを得ることにある。The object of the present invention is to prevent the vapor deposition material from scattering during vapor deposition, and to have an oxygen barrier property of 1 cc / m 2.
-To obtain a film in which an inorganic oxide thin film having a dense structure of about 24 hr-atm is laminated on a plastic film.
【０００５】本発明は材料の飛散、真空度の上昇が実質
的にない蒸着材料を使用して電子ビーム蒸着法により制
作された１ｃｃ／ｍ2 ・２４ｈｒ・ａｔｍ以下のハイバ
リアな特性を有するガスバリアフィルムである。すなわ
ち本発明は、ＳｉとＳｉの酸化物を３０ｗｔ％以上、他
の無機物，および／あるいは無機酸化物（ＭｇＯ、Ａｌ
2 Ｏ3 、ＳｎＯ、ＴｉＢ2 、ＴｉＯ2 、Ｂ2 Ｏ3 等）を
７０ｗｔ％以下含み、尚且つアルカリ金属，アルカリ土
類金属、あるいは実質的に塩基性を示す物質やその酸化
物，化合物などのアルカリ物を少なくとも１種０．１〜
１０ｗｔ％まで含む、無機酸化物薄膜をプラスチックフ
ィルムの少なくとも片面上にコートしたことを特徴とす
るガスバリアフィルムである。アルカリ物とは実質的に
塩基性を示す化合物、物質や各々酸化物であり、例え
ば、Ｎａ、Ｋ、Ｃａ、Ｍｇ、Ａｌ、ＣａＯ、ＭｇＯなど
ケイ酸ナトリウム、ホウ酸ナトリウム、水酸化ナトリウ
ム、水酸化カリウム、水酸化カルシウム、塩基性塩化ア
ルミニウムなどが挙げられるがこれらに限定されるもの
である。The present invention is a gas barrier film having a high barrier property of 1 cc / m 2 · 24 hr · atm or less, which is produced by an electron beam vapor deposition method using a vapor deposition material that does not substantially scatter the material and increase the degree of vacuum. Is. That is, according to the present invention, 30 wt% or more of Si and an oxide of Si, other inorganic substances, and / or inorganic oxides (MgO, Al
2 O 3 , SnO, TiB 2 , TiO 2 , B 2 O 3 etc.) in an amount of 70 wt% or less, and an alkali metal, an alkaline earth metal, or a substance that is substantially basic, its oxides, compounds, etc. At least one kind of alkaline substance of 0.1
A gas barrier film, characterized in that an inorganic oxide thin film containing up to 10 wt% is coated on at least one side of a plastic film. The alkaline substance is a compound, substance or oxide thereof that is substantially basic, and examples thereof include sodium silicate such as Na, K, Ca, Mg, Al, CaO and MgO, sodium borate, sodium hydroxide, and water. Examples thereof include potassium oxide, calcium hydroxide, and basic aluminum chloride, but are not limited thereto.
【０００６】本発明において好ましく適用されるドライ
プロセスとは蒸着法、スパッタ法等の高真空室内での薄
膜形法を示す。蒸着法とは抵抗加熱、誘導加熱、電子線
加熱等により、るつぼに入った材料を加熱、蒸発させて
基板に付着させる方法である。その際、材料、目的によ
って加熱湿度、加熱方式がことなり、最も適したものを
選ばなければならない。又、真空槽内に酸素等の反応ガ
スを導入し、酸化反応を起こさせる反応性蒸着もある。
スパッタ方式とは真空槽内に放電ガス（Ａｒ等）を導入
し、ターゲット、基板間に高周波電圧、直流電圧を与え
て放電ガスをプラズマ化し、ターゲットに衝突させ、材
料を飛ばして基板に付着させる方法である。又、酸素等
の反応ガスを導入し、酸化反応を起こさせる反応性スパ
ッタもある。The dry process preferably applied in the present invention means a thin film forming method in a high vacuum chamber such as a vapor deposition method and a sputtering method. The vapor deposition method is a method in which the material contained in the crucible is heated and evaporated by resistance heating, induction heating, electron beam heating, or the like to adhere to the substrate. At that time, the heating humidity and heating method differ depending on the material and purpose, and the most suitable one must be selected. There is also reactive vapor deposition in which a reaction gas such as oxygen is introduced into a vacuum chamber to cause an oxidation reaction.
The sputtering method introduces a discharge gas (Ar, etc.) into a vacuum chamber, applies a high-frequency voltage and a DC voltage between the target and the substrate to turn the discharge gas into plasma, collide with the target, and fly the material to adhere it to the substrate. Is the way. There is also reactive sputtering in which a reaction gas such as oxygen is introduced to cause an oxidation reaction.
【０００７】本発明において、プラスチックフィルムと
は有機重合体を溶解又は溶融押し出したもので、必要に
応じて長手方向、幅方向に延伸したものである。有機重
合体の代表適なものとしては、ポリエステル、ポリエチ
レン、ナイロン６、ポリアミド、ポリイミド等がある。In the present invention, the plastic film is obtained by dissolving or melt-extruding an organic polymer, and is stretched in the longitudinal direction and the width direction as required. Typical examples of suitable organic polymers include polyester, polyethylene, nylon 6, polyamide, and polyimide.
【０００８】本発明は従来のＳｉとＳｉの酸化物を含む
無機酸化物薄膜をコートしたガスバリアフィルムでは達
成できない１ｃｃ／ｍ2 ・２４ｈｒ・ａｔｍ以下のハイ
バリアな特性を、ＳｉとＳｉの酸化物に他の無機物、無
機酸化物やアルカリ金属、アルカリ土類金属、あるいは
実質的に塩基性を示す物質を添加することで達成するも
のである。The present invention provides Si and Si oxides with a high barrier property of 1 cc / m 2 · 24 hr · atm or less, which cannot be achieved by a conventional gas barrier film coated with an inorganic oxide thin film containing Si and Si oxides. This is achieved by adding another inorganic substance, an inorganic oxide, an alkali metal, an alkaline earth metal, or a substance which is substantially basic.
【０００９】本発明はＳｉとＳｉの酸化物の混合粉末に
他の無機物、無機酸化物（ＭｇＯ、Ａｌ2 Ｏ3 、Ｓｎ
Ｏ、ＴｉＢ2 、ＴｉＯ2 、Ｂ2 Ｏ3 等）を添加、混合し
た材料に更にアルカリ金属、アルカリ土類金属、あるい
は実質的に塩基性を示す物質やその化合物を添加して、
成形，焼結させた蒸着材料を使用して、材料の飛散、真
空度の上昇を抑え、緻密な無機酸化物薄膜が形成でき
る。この蒸着材料を使用して蒸着法により作製した、Ｓ
ｉとＳｉの酸化物を３０ｗｔ％以上含み、他の無機物，
無機酸化物（ＭｇＯ、Ａｌ2 Ｏ3 、ＳｎＯ、ＴｉＢ2 、
ＴｉＯ2 、Ｂ2 Ｏ3 等）を７０ｗｔ％以下含む、尚且つ
アルカリ金属、アルカリ土類金属、あるいは実質的に塩
基性を示す物質やその酸化物，化合物を０．１〜１０％
まで含む無機酸化物薄膜をコートしたガスバリアフィル
ムは１ｃｃ／ｍ2 ・２４ｈｒ・ａｔｍ以下のハイバリア
な特性を有する。According to the present invention, a mixed powder of Si and an oxide of Si is mixed with other inorganic substances and inorganic oxides (MgO, Al 2 O 3 , Sn).
O, TiB 2, TiO 2, B 2 O 3 , etc.) added, further alkali metal mixed material, alkaline earth metal, or a substance or its compounds showing essentially basic by the addition,
By using a vapor deposition material that has been molded and sintered, it is possible to form a dense inorganic oxide thin film while suppressing scattering of the material and increase in the degree of vacuum. S produced by vapor deposition using this vapor deposition material, S
Contains 30 wt% or more of oxides of i and Si, other inorganic substances,
Inorganic oxides (MgO, Al 2 O 3 , SnO, TiB 2 ,
The TiO 2, B 2 O 3, etc.) or less 70 wt%, besides the alkali metal, alkaline earth metal or substance or its oxide having a substantially basic, the compound 0.1% to 10%
The gas barrier film coated with an inorganic oxide thin film containing up to 1 cc has a high barrier property of 1 cc / m 2 · 24 hr · atm or less.
【００１０】実施例１ Ｓｉ、ＳｉＯ2 の多孔質な蒸着材料を使用して、電子ビ
ーム蒸着法により製作したガスバリアフィルムの性能評
価を行った。Example 1 The performance of a gas barrier film produced by an electron beam evaporation method was evaluated using a porous evaporation material of Si and SiO 2 .
【００１１】[0011]
【製作方法】ＳｉとＳｉＯ2 の粉末を４７：５３ｗｔ％
で混合した粉末材料に、珪酸ナトリウム（Ｎａ2 ＳｉＯ
3 ）を水に対して２．０ｗｔ％混合した溶液を粉末材料
２００ｇに対して、７０ｃｃの割合で攪拌、型入れ、乾
燥、焼結させて、多孔質な蒸着材料を製作した。[Manufacturing method] Si and SiO 2 powder 47:53 wt%
Sodium silicate (Na 2 SiO
A solution prepared by mixing 2.0% by weight of 3 ) with water was stirred, put in a mold, dried and sintered at a ratio of 70 cc with respect to 200 g of the powder material to manufacture a porous vapor deposition material.
【００１２】製作した蒸着材料を使用して図１に示した
ＥＢ蒸着装置により、ＰＥＴフィルムの片面上にＳｉＯ
コートを行った。その際、ＰＥＴフィルムの厚さは１２
μｍ、製膜時の送り速度は８０ｍ／ｍｉｎ、電子ビーム
の投入電力は４０ｋｗで行った。又、蒸発源のスリット
の幅は１００ｍｍ、ドラムは−１０℃まで冷却した。真
空槽内を６×１０-4ｐａ以下に排気した後、電子ビーム
蒸着を行いＳｉＯを７００Ａコートした。製作したガス
バリアフィルムの酸素透過率の測定結果を表１に示す。Using the produced evaporation material, the EB evaporation apparatus shown in FIG. 1 was used to form SiO on one side of the PET film.
I went to the court. At that time, the thickness of the PET film is 12
μm, the feed rate during film formation was 80 m / min, and the input power of the electron beam was 40 kW. The width of the slit of the evaporation source was 100 mm, and the drum was cooled to -10 ° C. After evacuating the inside of the vacuum chamber to 6 × 10 −4 pa or less, electron beam evaporation was performed to coat 700 A of SiO. Table 1 shows the measurement results of the oxygen permeability of the produced gas barrier film.
【００１３】実施例２ Ｓｉ、ＳｉＯ2 、ＭｇＯの多い孔質な蒸着材料を使用し
て、電子ビーム蒸着法により製作したガスバリアフィル
ムの性能評価を行った。Example 2 The performance of a gas barrier film produced by an electron beam evaporation method was evaluated using a porous evaporation material containing a large amount of Si, SiO 2 and MgO.
【００１４】[0014]
【製作方法】Ｓｉ、ＳｉＯ2 、ＭｇＯの粉末を２８：４
２：３０ｗｔ％で混合した粉末材料にケイ酸ナトリウム
（Ｎａ2 ＳｉＯ3 ）を水に対して０．２ｗｔ％混合した
溶液を粉末材料２００ｇに対して７０ｃｃの割合で加え
攪拌、型入れ、発砲、乾燥、焼結させて多孔質構造を有
する蒸着材料を製作した。[Manufacturing method] Si: SiO 2 , MgO powder 28: 4
A solution of 0.2 wt% of sodium silicate (Na 2 SiO 3 ) mixed with 2:30 wt% of the powder material was added at a ratio of 70 cc to 200 g of the powder material, stirred, put in a mold, and fired. A vapor deposition material having a porous structure was manufactured by drying and sintering.
【００１５】製作した蒸着材料を使用して図１に示した
ＥＢ蒸着装置により、ＰＥＴフィルムの片面上にＳｉＯ
コートを行った。その際、ＰＥＴフィルの厚さは１２μ
ｍ、製膜時の送り速度は８０ｍ／ｍｉｎ、電子ビームの
投入電力は４３ｋｗで行った。又、蒸発源のスリットの
幅は１００ｍｍ、ドラムは−１０℃まで冷却した。Using the produced vapor deposition material, the EB vapor deposition apparatus shown in FIG. 1 was used to deposit SiO on one side of the PET film.
I went to the court. At that time, the thickness of the PET fill is 12μ
m, the feed rate during film formation was 80 m / min, and the input power of the electron beam was 43 kW. The width of the slit of the evaporation source was 100 mm, and the drum was cooled to -10 ° C.
【００１６】[0016]
【発明の効果】本発明はレトルト食品包装用等のガスバ
リアフィルムに関するもので、従来のガスバリアフィル
ムよるも格段によいガス遮断性を有するのもであり、レ
トルト食品包装用等のハイガスバリア性が必要な包装よ
フィルムとして有用なフィルムである。INDUSTRIAL APPLICABILITY The present invention relates to a gas barrier film for packaging retort foods and the like, which has a significantly better gas barrier property than conventional gas barrier films, and requires a high gas barrier property for packaging retort foods. It is a useful packaging film.
【００１７】[0017]
【図１】図１は比較例１の蒸着装置の構造図である。及
び実施例１、２でフィルムに蒸着する時に用いた蒸着装
置の概略図である。FIG. 1 is a structural diagram of a vapor deposition apparatus of Comparative Example 1. 3 is a schematic view of a vapor deposition apparatus used when vapor depositing a film in Examples 1 and 2. FIG.
１：ＰＥＴフィルムのロール ２：テンショナー ３：冷却ドラム ４：シャッター ５：スリット ６：電子ビーム蒸着源 ７：巻き取りロール 1: Roll of PET film 2: Tensioner 3: Cooling drum 4: Shutter 5: Slit 6: Electron beam evaporation source 7: Winding roll
【表１】 [Table 1]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山田 陽三 滋賀県大津市堅田二丁目１番１号 東洋紡 績株式会社総合研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yozo Yamada 2-1-1 Katata, Otsu City, Shiga Prefecture Toyobo Co., Ltd.
Claims (3)
他の無機物、および／あるいは無機酸化物を７０ｗｔ％
以下含み、且つアルカリ金属、アルカリ土類金属、実質
的に塩基性を示す物質及び各々の酸化物から選ばれた少
なくとも１種を０．１〜１０ｗｔ％含む、無機酸化物薄
膜がプラスチックフィルムの少なくとも片面に積層され
たことを特徴とするガスバリアフィルム。1. Si and Si oxide in an amount of 30 wt% or more,
70% by weight of other inorganic substances and / or inorganic oxides
An inorganic oxide thin film is at least a plastic film containing 0.1 to 10 wt% of at least one selected from the group consisting of alkali metals, alkaline earth metals, substances exhibiting basicity and respective oxides, which are included below. A gas barrier film, which is laminated on one side.
他の無機物、および／あるいは無機酸化物を７０ｗｔ％
以下含み、且つアルカリ金属との化合物、アルカリ土類
金属との化合物、実質的に塩基性を示す化合物及び各々
の酸化物から選ばれた少なくとも１種を０．１〜１０ｗ
ｔ％含む、無機酸化物薄膜がプラスチックフィルムの少
なくとも片面に積層されたことを特徴とするガスバリア
フィルム。2. Si and Si oxide of 30 wt% or more,
70% by weight of other inorganic substances and / or inorganic oxides
0.1 to 10 w of at least one selected from the following compounds, and a compound with an alkali metal, a compound with an alkaline earth metal, a compound having substantially basicity and each oxide.
A gas barrier film comprising an inorganic oxide thin film containing t% on at least one side of a plastic film.
ムを電子ビーム蒸着法で製造することを特徴とする請求
項１及び２記載のガスバリアフィルムの製造法。3. The method for producing a gas barrier film according to claim 1, wherein the gas barrier film according to any one of claims 1 and 2 is produced by an electron beam evaporation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16382991A JP3267637B2 (en) | 1991-06-07 | 1991-06-07 | Gas barrier film and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16382991A JP3267637B2 (en) | 1991-06-07 | 1991-06-07 | Gas barrier film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0616848A true JPH0616848A (en) | 1994-01-25 |
| JP3267637B2 JP3267637B2 (en) | 2002-03-18 |
Family
ID=15781540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16382991A Expired - Fee Related JP3267637B2 (en) | 1991-06-07 | 1991-06-07 | Gas barrier film and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3267637B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806448A3 (en) * | 1996-04-16 | 1998-05-13 | Toyo Boseki Kabushiki Kaisha | Gas barrier resin film |
| JP2003081239A (en) * | 2001-09-12 | 2003-03-19 | Sekisui Chem Co Ltd | Antibacterial resin container |
| WO2005051651A1 (en) * | 2003-11-27 | 2005-06-09 | Mitsubishi Plastics, Inc. | Gas barrier film |
| JP2005178371A (en) * | 2003-11-27 | 2005-07-07 | Mitsubishi Plastics Ind Ltd | Gas barrier film |
| JP2012072456A (en) * | 2010-09-29 | 2012-04-12 | Toppan Printing Co Ltd | Vapor deposition material |
| JPWO2020137992A1 (en) * | 2018-12-26 | 2021-11-18 | Ａｇｃ株式会社 | Method for manufacturing a base material with a water-repellent oil-repellent layer, a vapor-deposited material, and a base material with a water-repellent oil-repellent layer |
-
1991
- 1991-06-07 JP JP16382991A patent/JP3267637B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806448A3 (en) * | 1996-04-16 | 1998-05-13 | Toyo Boseki Kabushiki Kaisha | Gas barrier resin film |
| JP2003081239A (en) * | 2001-09-12 | 2003-03-19 | Sekisui Chem Co Ltd | Antibacterial resin container |
| WO2005051651A1 (en) * | 2003-11-27 | 2005-06-09 | Mitsubishi Plastics, Inc. | Gas barrier film |
| JP2005178371A (en) * | 2003-11-27 | 2005-07-07 | Mitsubishi Plastics Ind Ltd | Gas barrier film |
| US7615287B2 (en) | 2003-11-27 | 2009-11-10 | Mitsubishi Plastics, Inc. | Gas barrier film |
| JP2012072456A (en) * | 2010-09-29 | 2012-04-12 | Toppan Printing Co Ltd | Vapor deposition material |
| JPWO2020137992A1 (en) * | 2018-12-26 | 2021-11-18 | Ａｇｃ株式会社 | Method for manufacturing a base material with a water-repellent oil-repellent layer, a vapor-deposited material, and a base material with a water-repellent oil-repellent layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3267637B2 (en) | 2002-03-18 |
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