JPH0619122A - Structure of blanks and production of photomask - Google Patents

Abstract

PURPOSE:To eliminate the influence of particles at the time of exposing, etc., even if the particles stick to the surface of the blanks at the time of storage, etc., of the structure of the blanks for production of a photomask to be utilized for production of a semiconductor device, etc. CONSTITUTION:A film 4 is stuck to the surface of the blanks after the application of a resist 3 on the blanks, this film 4 is peeled before exposing, etc., by which the particles adhered onto the blanks till then are removed. Exposing of the film in the state of holding the film 4 stuck at the time of the exposing is possible in the case of the film 4 transmitting the exposing light. The use of only the film 4 which does not allow the transmission of the exposing light and the use of the film which does not allow the transmission of the exposing light and the film which allows the transmission of the exposing light by superposing two sheets of these films are possible as well. The exposing of the resist 3 is prevented since the blanks are produced before the blanks are used in the case of the film which does not allow the transmission of the exposing light.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a blank for manufacturing a photomask used for manufacturing a semiconductor device or the like.

The present invention also relates to a method of manufacturing a photomask used for manufacturing a semiconductor device or the like.

[0003]

2. Description of the Related Art The structure of a conventional photomask manufacturing blank is shown in FIG. 4 (a) is an external view of the blanks,
FIG. 4B is a sectional view of the blank, in which 1 is a glass substrate, 2 is Cr, and 3 is a resist. Thus, in the conventional blanks, nothing was present on the resist.

A conventional photomask manufacturing method is shown in FIG.
Shown in. In FIG. 8, 1 is a glass substrate, 2 is a Cr film,
3 is a resist film, 5 is an exposure pattern, 6 is a resist pattern, and 7 is a Cr pattern. As shown in this figure, when manufacturing a photomask, first, the base of the photomask (blanks)
A glass substrate is formed, a Cr film is formed thereon by sputtering, etc., a resist film is coated on the Cr film, the resist is exposed by an EB, a laser exposure device or a pattern generator, and then developed to form a pattern portion. Is removed, the Cr film in the pattern portion is removed by etching to form a pattern, and finally the resist is peeled off to form a photomask.

[0005]

However, when the blanks are stored in the above-mentioned state, particles or the like may adhere to the resist. In that case, the adhered substances interfere with the exposure during the exposure, and the resist resists the exposure. However, there was a problem that it was not exposed according to the design pattern.

Further, there is a problem that development defects and etching defects may occur due to particles adhering between the exposure and the development and etching.

Also, when actually manufacturing a photomask, the blanks may be stored for a long time after the resist is applied in the above process, and particles or the like may adhere to the resist during that time. There is a problem that the resist does not expose in accordance with the design pattern because the adhered matter blocks the exposure light during exposure.

Further, development failure may occur due to particles attached during storage after exposure, development, and etching.
There is also a problem that etching defects occur.

Therefore, the present invention provides a blank having a structure in which even if particles adhere to the surface of the blank, it does not affect the exposure, and after the exposure, even if particles adhere to the surface of the blank, development and etching can be performed. The purpose is to provide a blank having a structure that does not affect.

At the same time, it is another object of the present invention to provide a blank having a structure capable of preventing exposure of the resist during storage of the blank.

Further, the present invention provides a method for producing a photomask which does not affect the exposure even if particles adhere to the resist surface of the blanks, and from the exposure to the development. Another object of the present invention is to provide a method for manufacturing a photomask that does not affect development and etching even if particles adhere to the resist surface of the blank.

At the same time, it is another object of the present invention to provide a method of manufacturing a photomask capable of preventing the resist from being exposed to light when the blanks are stored after being coated with the resist.

[0013]

[Means for Solving the Problems]

1) In order to solve the above problems, the structure of the blank for producing a photomask of the present invention is characterized in that a film for preventing particle adhesion is attached to the upper part of the resist surface of the blank.

2) In order to solve the above problems, the structure of the blank for producing a photomask of the present invention is the same as the structure of the blank of 1) described above, in which the film to be attached is made of a material that transmits the exposure light. Characterize.

3) In order to solve the above problems, the structure of the blank for producing a photomask of the present invention is the same as the structure of the blank of 1) above, except that the film to be attached is made of a material that does not transmit exposure light. Characterize.

4) In order to solve the above problems, the structure of the blank for manufacturing a photomask according to the present invention has a film made of a material that transmits exposure light and a film that does not transmit exposure light above the resist surface of the blank. It is characterized in that two sheets of each one are laminated and pasted.

5) In order to solve the above-mentioned problems, the structure of the blank for producing a photomask of the present invention has the above-mentioned 1),
The blanks of 2), 3) and 4) are characterized in that protrusions are provided at one of the four corners of the film.

6) In order to solve the above problems, in the method of manufacturing a photomask of the present invention, after applying a resist to a blank for a photomask, a film for preventing particle adhesion is attached to the upper part of the resist, and an element is attached to the resist. It is characterized in that the film previously attached is peeled off immediately before exposing the pattern.

7) In order to solve the above problems, the method of manufacturing a photomask according to the present invention is the same as the method of manufacturing a photomask in 6), except that after applying a resist to a blank for a photomask, a resist is formed on the resist. A film made of a material which does not transmit light in the photosensitive wavelength band is adhered, and the film previously adhered is peeled off immediately before exposing the element pattern to the resist.

8) In order to solve the above problems, the method of manufacturing a photomask according to the present invention is a film made of a material which transmits light in the photosensitive wavelength band of the resist after the resist is applied to the blank for the photomask. Is attached, the element pattern is exposed to the resist as it is, and the film previously attached is peeled off immediately before development.

9) In order to solve the above problems, the method of manufacturing a photomask according to the present invention is a film made of a material that transmits light in the photosensitive wavelength band of the resist after the resist is applied to the photomask blanks. And a film of a material that does not transmit light in the photosensitive wavelength band of the resist on top of it, and a material that does not transmit light in the photosensitive wavelength band of the resist that was previously attached immediately before exposing the element pattern to the resist The film is peeled off, the element pattern is exposed to the resist as it is, and the film of the material which transmits the light in the photosensitive wavelength band of the resist, which is pasted, is peeled off immediately before the development.

[0022]

EXAMPLE An example of the present invention is shown in FIGS. 1A and 1B, 1 is a glass substrate, 2 is a Cr film, 3 is a resist film, and 4 is a film. In this way, by sticking the film on the resist film, the particles are never directly attached to the resist, and even if the particles adhere to the film, by peeling off the film before exposure, the particles are resisted. It is possible to completely remove it from above.

Further, by using the material of the material which transmits the exposure light for the film of 4, the exposure is carried out with the film being stuck at the time of exposure, and the film is adhered during the development and etching steps after the exposure. It is possible to completely remove the particles by peeling the film immediately before development and etching.

Further, by using a material of the film 4 which does not transmit the exposure light, the resist can be prevented from being exposed to light from the time of manufacturing the blanks to the time of using the blanks, and the particles are directly adhered to the resist. Even if the particles adhere to the film, it is possible to completely remove the particles from the resist by peeling off the film before exposure.

The above is one embodiment of the present invention, but in addition to this, the case shown in FIG. 2 is also an embodiment of the present invention. 2A and 2B, 1 is a glass substrate, 2 is a Cr film, 3 is a resist film, and 4 and 5 are films. This is because by stacking two films like 4 and 5 on the resist, particles adhering during storage until exposure are removed by one film of 5 and the film of 4 is made of a material that transmits the exposure light. By leaving it as a thing,
Exposure is performed with the film of No. 4 attached, and particles that adhere from the end of exposure to development and etching
The film is to be removed.

Also in this embodiment, by making the film of 5 impermeable to the exposure light, it is possible to prevent the exposure of the resist from the application of the resist to the exposure and to prevent the particles adhering during the storage until the exposure. Is removed with one film of 5, and the film of 4 is made of a material that transmits the exposure light, so that the film can be exposed with the film of 4 affixed, from the end of exposure to the time of development and etching. It is possible to remove the particles attached to the film with the film of 4.

The material of the film is vinyl, nitrocellulose or the like, and those which transmit the exposure light are made colorless and transparent, and those which do not transmit the exposure light are colored to absorb the exposure light.

With respect to the sticking method, no adhesive or the like is used, but the sticking is performed by static electricity.

Further, as shown in FIG. 3A, it is also an embodiment of the present invention to provide projections at one of the four corners of the film for peeling the film.

Furthermore, as shown in FIG.
In case of peeling the film when stacking multiple sheets, it is necessary to provide protrusions at one of the four corners of the film and to make the protrusion of the film attached to the upper part longer than the protrusion of the film attached to the lower part. This is an example of the present invention.

Furthermore, the embodiment of the present invention is also shown in FIGS. 5, 6 and 7.

In FIG. 5, 1 is a glass substrate, 2 is Cr
Film, 3 is a resist film, 4 is a film for preventing particle adhesion, 6 is an exposure pattern, 7 is a resist pattern, 8
Is a Cr pattern. In FIG. 5, first, a glass substrate to be the base (blanks) of the photomask is made, and Cr is placed there.
A film is formed by sputtering or the like, and a resist is applied on the Cr film. After that, a film 4 for preventing particle adhesion is attached onto the applied resist.
The blanks are stored in this state until the exposure of the pattern, and the film 4 is peeled off immediately before the exposure. After that, the pattern is exposed, developed and etched as in the conventional photomask manufacturing method, and the resist remaining at the end is peeled off to complete the photomask.

In the process of manufacturing a photomask, it often takes a long time from the application of the resist to the exposure, and it is very likely that particles adhere to the resist surface during the storage. Has become. However, by sticking the film 4 immediately after coating the resist as described above, even if particles adhere during storage, the particles do not directly adhere to the resist surface due to the film 4, and the particles do not adhere to the resist surface during exposure. By peeling off the film 4, the resist surface is kept in the same state as immediately after the resist application.

Further, by using the above-mentioned film 4 for preventing particle adhesion as a film not only for preventing particle adhesion but also for not transmitting light in the photosensitive wavelength band of the resist, from the resist application to the pattern exposure. During this, the resist can be prevented from being deteriorated.

Alternatively, by increasing the thickness of the film 4, the resist can be protected from not only particles but also light impact.

In FIG. 6, 1 is a glass substrate, 2 is Cr
A film, 3 is a resist film, 5 is a film made of a material that transmits light in the photosensitive wavelength band of the resist, 6 is an exposure pattern, 7 is a resist pattern, and 8 is a Cr pattern. In FIG. 6, as in FIG. 5, first, a glass substrate to be a base (blanks) of a photomask is formed, a Cr film is formed thereon by sputtering or the like, and a resist is applied on the Cr film. After that, a film 5 made of a material that transmits light in the photosensitive wavelength band of the resist is attached onto the applied resist, and the element pattern is exposed while the film 5 is attached. After the exposure is finished, the film 5 is peeled off immediately before proceeding to the developing step, and thereafter, development and etching are performed in the same manner as in the conventional photomask manufacturing method, and the resist remaining at the end is peeled off to complete the photomask.

In the case of this manufacturing method, even if particles adhere between the exposure and the developing step,
The particles do not directly adhere to the resist surface by the film 5, and the film 5 is peeled off together with the particles immediately before the development, so that the resist surface can be kept in the same clean state as immediately after the resist application.

Next, in FIG. 7, 1 is a glass substrate, 2 is
Is a Cr film, 3 is a resist film, 4 is a film of a material that does not transmit light in the photosensitive wavelength band of resist, 5 is a film of a material that transmits light in the photosensitive wavelength band of resist, 6 is an exposure pattern, and 7 is a resist pattern , 8 are Cr patterns.
In FIG. 7, as in FIGS. 5 and 6, first, a glass substrate to be a base (blanks) of a photomask is formed, a Cr film is formed thereon by sputtering or the like, and a resist is applied onto the Cr film. After that, a film 5 made of a material that transmits light in the photosensitive wavelength band of the resist is attached onto the applied resist, and a film 4 made of a material that does not transmit light in the photosensitive wavelength band of the resist is attached thereon. The blanks are stored in this state until the exposure of the pattern, and the film 4 is peeled off immediately before the exposure. Here, as in the case described with reference to FIG. 6, the film 5 is exposed on the element pattern while being stuck on the resist. After the exposure is finished, the film 5 is peeled off immediately before proceeding to the developing step, and thereafter, development and etching are performed in the same manner as in the conventional photomask manufacturing method, and the resist remaining at the end is peeled off to complete the photomask.

When the photomask is manufactured in this manner, the film 4 made of a material that does not transmit light in the photosensitive wavelength band of the resist prevents the resist from being deteriorated between the resist application and the pattern exposure. Further, the particles that adhere during storage can be completely removed from the blanks together with the film 4. Moreover, even if particles adhere to the resist surface from the time of exposure to the developing step, the particles do not directly adhere to the resist surface by the film 5, and the film 5 is peeled off together with the particles immediately before the development. The resist surface is kept in the same clean state as immediately after the resist application.

[0040]

As described above, when the blank of the present invention is used, the particles that have been on the blank before exposure can be removed by peeling the film off, and the pattern defect due to the particles can be prevented.

Further, by using a material made of a material that allows exposure light to pass through, the film is exposed during the exposure while the film is still attached, and particles are attached during the development and etching steps after the exposure. Against development,
By peeling off the film immediately before etching, particles can be completely removed, and there is also an effect that development defects and etching defects due to particles during development and etching can be prevented.

Further, by using a film that does not transmit exposure light as the film, it is possible to prevent the resist from being exposed to light during the production of the blanks and the use of the blanks.
In addition, the particles that have been on the blanks before exposure can be removed by peeling off the film, and there is an effect that pattern defects due to the particles can be prevented.

Alternatively, by preventing the exposure light from passing through and pasting the two films onto each other, the resist film is prevented from being exposed to light during the production of the blanks and the use of the blanks. In addition, the particles on the blanks before exposure can be removed by peeling off the film that does not transmit the exposure light, and pattern defects due to the particles during exposure can be prevented. Exposure is performed with the light-transmitting film attached, and after the exposure, the particles that adhere during the development and etching steps are completely removed by peeling off the film immediately before development and etching. Can be removed and prevents development defects and etching defects due to particles during development and etching There is also an effect that kill.

Furthermore, if a photomask is manufactured by the method for manufacturing a photomask according to the present invention, particles that have been on the blank before exposure can be removed by peeling the film off, and pattern defects due to particles can be prevented. effective.

Furthermore, by using a material that does not transmit light in the photosensitive wavelength band of the resist for the film, it is possible to prevent the resist from being exposed to light during the production of the blanks and during the use of the blanks. There is also an effect that it is possible to remove the particles that have previously been on the blanks by peeling off the film, and to prevent pattern defects due to the particles.

Further, by using a material of a resist which transmits light in the photosensitive wavelength band for the film, the film is exposed in the state of being stuck at the time of exposure, and the development and etching steps after the exposure are performed. With respect to particles adhering in between, the film can be completely removed by peeling the film immediately before development and etching, and there is an effect that development failure and etching failure due to particles during development and etching can be prevented.

Alternatively, a film that does not transmit light in the photosensitive wavelength band of the resist and a film that transmits light on the resist are provided on the resist.
By stacking multiple layers, the film that does not transmit light in the photosensitive wavelength band of the resist can prevent the resist from being exposed to light during the period from resist application to exposure.
Particles on the blanks before exposure can be removed by peeling off the film that does not transmit light in the photosensitive wavelength band of the resist, and it is possible to prevent pattern defects due to particles during exposure. Exposure is performed with the film that transmits light in the photosensitive wavelength band being attached, and development is performed on particles that adhere during the period from the exposure to the development and etching steps.
Particles can be completely removed by peeling off the film that transmits light in the photosensitive wavelength band of the resist immediately before etching, and there is an effect that development failure and etching failure due to particles during development and etching can be prevented.

[Brief description of drawings]

FIG. 1 is a structural diagram of a blank of the present invention.

FIG. 2 is a structural diagram of a blank of the present invention.

FIG. 3 is a shape diagram of a film of a blank of the present invention.

FIG. 4 is a structural diagram of a conventional blank.

FIG. 5 is a flowchart of a method for manufacturing a photomask according to the present invention.

FIG. 6 is a flow chart of a method for manufacturing a photomask of the present invention.

FIG. 7 is a flowchart of a photomask manufacturing method of the present invention.

FIG. 8 is a flowchart of a conventional photomask manufacturing method.

[Explanation of symbols]

 1 glass substrate 2 Cr film 3 resist film 4 film 5 film 6 exposure pattern 7 resist pattern 8 Cr pattern

Claims (9)

[Claims] 1. A structure of a blank for producing a photomask, wherein a film for preventing particle adhesion is attached to an upper part of a resist surface of the blank, the structure of the blank. 2. The structure of the blank according to claim 1, wherein the film to be attached is made of a material that allows exposure light to pass therethrough. 3. The structure of the blank according to claim 1, wherein the film to be attached is made of a material that does not transmit exposure light. 4. In the structure of a blank for manufacturing a photomask, a film made of a material that transmits exposure light and a film made of a material that does not transmit exposure light are respectively stacked on top of a resist surface of the blanks. The structure of the blanks is characterized by pasting and pasting. 5. The structure of a blank according to claim 1, claim 2, claim 3 or claim 4, wherein projections are provided at one of four corners of the film. 6. In a method for producing a photomask, after applying a resist to a blank for a photomask, a film for preventing particle adhesion is pasted on the resist, and immediately before exposing the element pattern to the resist. A method for producing a photomask, which comprises removing the attached film. 7. The method of manufacturing a photomask according to claim 6, wherein after applying the resist to the blank for the photomask, a film made of a material that does not transmit light in the photosensitive wavelength band of the resist is pasted on the resist. A method for producing a photomask, characterized in that the film previously attached is peeled off immediately before exposing the element pattern to the resist. 8. In a method of manufacturing a photomask, after applying a resist to a blank for a photomask, a film made of a material that transmits light in the photosensitive wavelength band of the resist is attached to the upper part of the resist, and the film is left as it is. A method for producing a photomask, which comprises exposing an element pattern on a resist, and peeling off the previously attached film immediately before development. 9. In a method of manufacturing a photomask, after applying a resist to a blank for a photomask, a film made of a material that transmits light in a photosensitive wavelength band of the resist is attached to the upper part of the resist, and further on the upper part thereof. A film made of a material that does not transmit light in the photosensitive wavelength range of the resist is attached, and the film made of a material that does not transmit light in the photosensitive wavelength range of the resist that was pasted just before exposing the element pattern to the resist is peeled off and the state is left as it is. 2. A method for manufacturing a photomask, comprising exposing the element pattern on the resist, and peeling off a film made of a material that transmits light in the photosensitive wavelength band of the resist, which is pasted immediately before development.