JPH06201630A - Sensor circuit - Google Patents
Sensor circuitInfo
- Publication number
- JPH06201630A JPH06201630A JP4359247A JP35924792A JPH06201630A JP H06201630 A JPH06201630 A JP H06201630A JP 4359247 A JP4359247 A JP 4359247A JP 35924792 A JP35924792 A JP 35924792A JP H06201630 A JPH06201630 A JP H06201630A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- resistor
- resistance
- chamber
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガスセンサ、湿度セン
サ等の周囲の雰囲気を検出するセンサの電気回路に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric circuit of a sensor such as a gas sensor or a humidity sensor for detecting the surrounding atmosphere.
【０００２】[0002]
【従来の技術】従来、例えば、ガス検出装置として、金
属酸化物半導体の内部に電極と、電極を兼ねたヒータを
内蔵し、該金属酸化物半導体をヒータにより加熱した時
に該金属酸化物半導体の抵抗値が該金属酸化物半導体の
表面でのガス吸着によって下がることを利用したものが
提案されているが、消費電力が大きく、乾電池駆動には
適さないという問題があった。この点を改良すべく、架
橋構造や片持梁構造等、空気中に張り出させた張り出し
部を設け、この張り出し部の上に金属酸化物半導体を形
成するようにし、もって、熱容量を可及的に小さくして
応答性を上げ、且つ消費電力を低下させる試みが成され
ている。2. Description of the Related Art Conventionally, for example, as a gas detection device, a metal oxide semiconductor has a built-in electrode and a heater also serving as an electrode, and when the metal oxide semiconductor is heated by the heater, the metal oxide semiconductor A method utilizing the fact that the resistance value is lowered by gas adsorption on the surface of the metal oxide semiconductor has been proposed, but there is a problem that the power consumption is large and it is not suitable for driving a dry battery. In order to improve this point, a bridging structure, a cantilever structure, etc., is provided with an overhanging part that is overhanging in the air, and a metal oxide semiconductor is formed on this overhanging part, so that the heat capacity is increased as much as possible. Attempts have been made to reduce the power consumption by lowering the power consumption by increasing the responsiveness.
【０００３】また、この種のセンサにおいては、同様の
構造をもつ抵抗発熱体素子を２個設け、一方の素子を周
囲雰囲気に接触させてガス検出用として用い、他方の素
子を周囲雰囲気に接触させない密封構造とし、この密封
構造の素子にて周囲の温度を検出して温度補償をするこ
とが行われている。Further, in this type of sensor, two resistance heating element elements having the same structure are provided, one element is brought into contact with the ambient atmosphere to be used for gas detection, and the other element is brought into contact with the ambient atmosphere. A sealed structure is provided that does not allow the temperature to be compensated by detecting the ambient temperature with an element having this sealed structure.
【０００４】図２（Ａ）,（Ｂ）は、絶対湿度センサの
一例を示す平面図及び断面図で、図示のように、シリコ
ンからなる基板１に、凹部５，６を形成し、基板１の表
面に絶縁保護膜を形成した上、薄膜抵抗発熱体素子３，
４を前記凹部５，６に架橋支持するように設置する。こ
の構成により、熱容量を小さくした薄膜抵抗発熱体素子
の熱が直接基板に熱伝導するのを抑えて、基板で構成し
た空間の気体の熱伝導により熱平衡を保ち、小電力化と
応答の高速化を図るようにしている。2A and 2B are a plan view and a cross-sectional view showing an example of the absolute humidity sensor. As shown in the drawing, the recesses 5 and 6 are formed in the substrate 1 made of silicon, and the substrate 1 is formed. An insulating protective film is formed on the surface of the thin film resistance heating element 3,
4 is installed so as to bridge and support the recesses 5 and 6. With this configuration, the heat of the thin-film resistance heating element whose heat capacity is reduced is suppressed from directly conducting to the substrate, and the thermal equilibrium is maintained by the heat conduction of the gas in the space formed by the substrate, reducing the power consumption and increasing the response speed. I am trying to.
【０００５】また、カバー部材２にも基板１に対応する
位置に前記素子用の空間を作るための凹部７，８を形成
し、さらに、薄膜抵抗発熱体素子３，４のボンディング
電極部９を露出させるための開口部１０および検出用の
空洞部１１を外気に連通する通気孔１３を形成する。Further, the cover member 2 is also formed with recesses 7 and 8 at positions corresponding to the substrate 1 for forming spaces for the elements, and further the bonding electrode portions 9 of the thin film resistance heating element elements 3 and 4 are provided. A vent hole 13 is formed to connect the opening 10 for exposure and the detection cavity 11 to the outside air.
【０００６】そして、温度補償用の空洞部１２に封入す
る乾燥空気が一定既知の湿度の空気雰囲気中で、基板１
とカバー部材２を対向させ、図示のように、それぞれの
凹部で薄膜抵抗発熱体素子を囲む空間を作る配置にした
上、フリットシールガラスなどの封着剤１４で基板１と
カバー部材２を接合させることにより、温度補償側の空
洞１２は外部と遮断され常に一定の雰囲気に保たれる。[0006] Then, the dry air to be sealed in the temperature compensating cavity 12 is kept in an air atmosphere having a constant known humidity.
And the cover member 2 are opposed to each other, and as shown in the drawing, the respective recesses are arranged to form a space surrounding the thin film resistance heating element, and then the substrate 1 and the cover member 2 are joined with the sealing agent 14 such as frit seal glass. By doing so, the cavity 12 on the temperature compensation side is shielded from the outside and always kept in a constant atmosphere.
【０００７】上記のように構成されたセンサは、２つの
薄膜抵抗発熱体素子に電力によって一定のエネルギを供
給して自己加熱させると、それぞれ参照用空間部，検出
用空間部の雰囲気によってその抵抗値が変化するので、
例えば、水蒸気が絶対湿度に対応する空間の熱伝導によ
って放熱し、一定の温度になってそれぞれ一定の抵抗値
をもつので、その差をブリッジ回路の非平衡電位の出力
として検出して絶対湿度を計測することができる。When the two thin-film resistance heating elements are supplied with constant energy and self-heated by the electric power supplied to the two thin-film resistance heating elements, the resistances of the sensors are changed by the atmospheres of the reference space and the detection space, respectively. Since the value changes,
For example, water vapor radiates heat due to heat conduction in the space corresponding to absolute humidity, and since it has a constant temperature and a constant resistance value, the difference is detected as the output of the non-equilibrium potential of the bridge circuit and the absolute humidity is calculated. It can be measured.
【０００８】図３は、上述のごときセンサの電気回路の
一例を説明するための図で、図中、Ｒｒは密閉室１２内
に配設されたセンサの抵抗値、Ｒｓは開放室１１内に配
設されたセンサの抵抗値で、図示のように、密閉室セン
サ抵抗Ｒｒと開放室センサ抵抗Ｒｓ及び演算増幅器ＩＣ
により密閉室のセンサ抵抗ＲｒにＩ＝（Ｖref／Ｒｒ）
（ただし、Ｖrefは基準電圧）なる電流を供給し、開放
室のセンサ抵抗Ｒｓの外気雰囲気例えば湿度に対する変
化を、演算増幅器ＩＣの出力電圧Ｖoutに置き換えてい
た。FIG. 3 is a diagram for explaining an example of the electric circuit of the sensor as described above. In the figure, Rr is the resistance value of the sensor arranged in the closed chamber 12, and Rs is the open chamber 11. As shown in the figure, the resistance value of the provided sensor is a closed chamber sensor resistance Rr, an open chamber sensor resistance Rs, and an operational amplifier IC.
I = (Vref / Rr) to the sensor resistance Rr in the closed chamber
(However, Vref is a reference voltage), the change in the sensor resistance Rs of the open chamber with respect to the outside atmosphere such as humidity is replaced with the output voltage Vout of the operational amplifier IC.
【０００９】[0009]
【発明が解決しようとする課題】図３において、演算増
幅器ＩＣの出力電圧Ｖoutは、 Ｖout＝Ｉ（Ｒｒ＋Ｒｓ）＝（１＋Ｒｓ／Ｒｒ）Ｖref となる。しかしながら、密閉室のセンサ抵抗Ｒｒ及び開
放室のセンサ抵抗Ｒｓには、湿度Ｈ、温度Ｔ、供給電流
Ｉに対して次の関係がある。 Ｒｒ＝ｆ（Ｔ，Ｉ），Ｒｓ＝ｆ（Ｈ，Ｔ，Ｉ） 従って、温度依存性については相殺するが、温度変化に
対して密閉室のセンサ抵抗Ｒｒの抵抗値が変化し、供給
電流Ｉが変化するため、開放室のセンサ抵抗Ｒｓの湿度
変化に対する感度が変動する欠点があった。In FIG. 3, the output voltage Vout of the operational amplifier IC is Vout = I (Rr + Rs) = (1 + Rs / Rr) Vref. However, the sensor resistance Rr in the closed chamber and the sensor resistance Rs in the open chamber have the following relationships with the humidity H, the temperature T, and the supply current I. Rr = f (T, I), Rs = f (H, T, I) Therefore, although the temperature dependence is canceled, the resistance value of the sensor resistance Rr of the sealed chamber changes with respect to the temperature change, and the supply current Since I changes, there is a drawback that the sensitivity of the sensor resistance Rs in the open chamber to humidity changes.
【００１０】[0010]
【課題を解決するための手段】本発明は、上記課題を解
決するために、密閉室のセンサ抵抗と開放室のセンサ抵
抗と基準抵抗との直列回路と、前記基準抵抗の電圧を帰
還電圧として前記直列回路に定電流を流す定電流回路
と；前記密閉室のセンサ抵抗の端子電圧と、開放室のセ
ンサ抵抗の端子電圧の差を検出する検出回路とを有し、
該検出回路の出力電圧を検出出力とすることを特徴とし
たものである。In order to solve the above problems, the present invention provides a series circuit of a sensor resistance in a closed chamber, a sensor resistance in an open chamber and a reference resistance, and a voltage of the reference resistance as a feedback voltage. A constant current circuit for supplying a constant current to the series circuit; and a detection circuit for detecting a difference between the terminal voltage of the sensor resistor in the closed chamber and the terminal voltage of the sensor resistor in the open chamber,
The output voltage of the detection circuit is used as a detection output.
【００１１】図１は、本発明の一実施例を説明するため
の電気回路で、図示のように、トランジスタＱ、密閉室
のセンサ抵抗Ｒｒ、開放室のセンサ抵抗Ｒｓ及び抵抗器
Ｒを直列に接続し、抵抗器Ｒの端子電圧Ｖ3を演算増幅
器ＩＣ１に入力し、もう一方には、基準電圧Ｖrefを与
えることにより、Ｉ＝Ｖref／Ｒ＝Ｖ3／Ｒなる定電流を
発生させ、前記密閉室のセンサ抵抗Ｒｒと開放室のセン
サ抵抗Ｒｓに流す。FIG. 1 is an electric circuit for explaining an embodiment of the present invention. As shown, a transistor Q, a sensor resistance Rr in a closed chamber, a sensor resistance Rs in an open chamber, and a resistor R are connected in series. By connecting and inputting the terminal voltage V 3 of the resistor R to the operational amplifier IC1, and applying the reference voltage Vref to the other side, a constant current of I = Vref / R = V 3 / R is generated, It flows through the sensor resistance Rr in the closed chamber and the sensor resistance Rs in the open chamber.
【００１２】密閉室のセンサ抵抗Ｒｒの端子電圧Ｖ1及
びＶ2を演算増幅器ＩＣ２に加え、その差分信号Ｖ1−Ｖ
2を取り出し、演算増幅器ＩＣ４に与える。また、開放
室のセンサ抵抗Ｒｓの端子電圧Ｖ2及びＶ3を演算増幅器
ＩＣ３に加え、その差分信号Ｖ2−Ｖ3を取り出し、演算
増幅器ＩＣ４に与える。この結果、演算増幅器ＩＣ４の
出力電圧Ｖoutは次式で表わされる。The terminal voltages V 1 and V 2 of the sensor resistance Rr in the closed chamber are applied to the operational amplifier IC2, and the differential signal V 1 -V
2 is taken out and given to the operational amplifier IC4. In addition the terminal voltage V 2 and V 3 of the sensor resistance Rs of the open chamber to the operational amplifier IC3, retrieves the differential signal V 2 -V 3, gives the operational amplifier IC 4. As a result, the output voltage Vout of the operational amplifier IC4 is expressed by the following equation.
【００１３】 Ｖout＝（Ｖ1−Ｖ2）−（Ｖ2−Ｖ3）＝Ｖｒ−Ｖｓ ここで、Ｖｒ＝Ｖ1−Ｖ2，Ｖｓ＝Ｖ2−Ｖ3である。Vout = (V 1 −V 2 ) − (V 2 −V 3 ) = Vr−Vs Here, Vr = V 1 −V 2 and Vs = V 2 −V 3 .
【００１４】密閉室のセンサ抵抗Ｒｒ及び開放室のセン
サ抵抗Ｒｓの端子電圧Ｖｒ及びＶｓは、湿度Ｈ、温度
Ｔ、供給電流Ｉに対して次の関係がある。 Ｖｒ＝ｆ（Ｔ，Ｉ），Ｖｓ＝ｆ（Ｈ，Ｔ，Ｉ） これより演算増幅器ＩＣ４の出力電圧Ｖoutは湿度（又
は外気雰囲気）の変化分のみに対応して変化することに
なる。The terminal voltages Vr and Vs of the sensor resistance Rr in the closed chamber and the sensor resistance Rs in the open chamber have the following relationship with the humidity H, the temperature T, and the supply current I. Vr = f (T, I), Vs = f (H, T, I) As a result, the output voltage Vout of the operational amplifier IC4 changes corresponding to only the change in humidity (or the outside air atmosphere).
【００１５】[0015]
【発明の効果】以上の説明から明らかなように、従来技
術によると、定電流を密閉室のサーミスタに流れる電流
によって規定しているため、温度変化に対して密閉室の
センサ抵抗が変化すると、該密閉室のセンサ抵抗に流れ
る電流が変化し、密閉室のセンサ抵抗の被測定雰囲気に
対する感度が変動するが、本発明によると、上述のごと
き感度変動は生じない。As is apparent from the above description, according to the prior art, the constant current is regulated by the current flowing through the thermistor in the sealed chamber. Therefore, if the sensor resistance of the sealed chamber changes with temperature change, Although the current flowing through the sensor resistance in the closed chamber changes and the sensitivity of the sensor resistance in the closed chamber to the atmosphere to be measured changes, the sensitivity change described above does not occur according to the present invention.
【図１】 本発明によるセンサ回路の一実施例を説明す
るための図である。FIG. 1 is a diagram for explaining an embodiment of a sensor circuit according to the present invention.
【図２】 本発明が適用されるセンサの一例を説明する
ための図である。FIG. 2 is a diagram for explaining an example of a sensor to which the present invention is applied.
【図３】 従来のセンサ回路の一例を説明するための図
である。FIG. 3 is a diagram for explaining an example of a conventional sensor circuit.
Ｒｒ…密閉室のセンサ抵抗、Ｒｓ…開放室のセンサ抵抗
室、ＩＣ１〜ＩＣ４…演算増幅器、１…基板、２…カバ
ー部材、３，４…抵抗発熱体素子、５，６，７，８…凹
部、９…ボンディング電極、１０…開口部、１１，１２
…空洞部、１３…通気孔、１４…封着剤。Rr ... Sensor resistance of closed chamber, Rs ... Sensor resistance chamber of open chamber, IC1 to IC4 ... Operational amplifier, 1 ... Substrate, 2 ... Cover member, 3, 4 ... Resistance heating element, 5, 6, 7, 8 ... Recesses, 9 ... Bonding electrodes, 10 ... Openings, 11, 12
... Cavity, 13 ... Vent, 14 ... Sealing agent.
Claims (1)
抗と基準抵抗との直列回路と、前記基準抵抗の電圧を帰
還電圧として前記直列回路に定電流を流す定電流回路
と；前記密閉室のセンサ抵抗の端子電圧と、開放室のセ
ンサ抵抗の端子電圧の差を検出する検出回路とを有し、
該検出回路の出力電圧を検出出力とすることを特徴とす
るセンサ回路。1. A series circuit of a sensor resistance in a closed chamber, a sensor resistance in an open chamber, and a reference resistance; a constant current circuit in which a constant current flows through the series circuit using the voltage of the reference resistance as a feedback voltage; And a detection circuit for detecting the difference between the terminal voltage of the sensor resistance of the sensor and the terminal voltage of the sensor resistance of the open chamber,
A sensor circuit, wherein the output voltage of the detection circuit is used as a detection output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35924792A JP2890286B2 (en) | 1992-12-25 | 1992-12-25 | Sensor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35924792A JP2890286B2 (en) | 1992-12-25 | 1992-12-25 | Sensor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06201630A true JPH06201630A (en) | 1994-07-22 |
| JP2890286B2 JP2890286B2 (en) | 1999-05-10 |
Family
ID=18463520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35924792A Expired - Fee Related JP2890286B2 (en) | 1992-12-25 | 1992-12-25 | Sensor circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890286B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026063083A1 (en) * | 2024-09-18 | 2026-03-26 | Ｓｅｍｉｔｅｃ株式会社 | Gas sensor and device having said gas sensor |
-
1992
- 1992-12-25 JP JP35924792A patent/JP2890286B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026063083A1 (en) * | 2024-09-18 | 2026-03-26 | Ｓｅｍｉｔｅｃ株式会社 | Gas sensor and device having said gas sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2890286B2 (en) | 1999-05-10 |
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