JPH06202057A - Optical waveguide method and its execution device - Google Patents

Optical waveguide method and its execution device

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Publication number
JPH06202057A
JPH06202057A JP49393A JP49393A JPH06202057A JP H06202057 A JPH06202057 A JP H06202057A JP 49393 A JP49393 A JP 49393A JP 49393 A JP49393 A JP 49393A JP H06202057 A JPH06202057 A JP H06202057A
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JP
Japan
Prior art keywords
mode
optical
waveguide
magneto
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49393A
Other languages
Japanese (ja)
Inventor
Toshihiro Shintaku
敏宏 新宅
Takehiko Uno
武彦 宇野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
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Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP49393A priority Critical patent/JPH06202057A/en
Publication of JPH06202057A publication Critical patent/JPH06202057A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 光集積化に適した安価な光導波方法及び光ア
イソレ−タを得る。 【構成】 本発明の光導波方法及び導波型光アイソレ−
タは、少なくともその一部が磁気光学材料で形成された
非相反性を示す光導波路からなり、前記磁気光学材料中
の磁化ベクトルにより前記光導波路を導波する光の進行
方向の違いにより位相定数が相互に異なり、光学異方性
によりTMモ−ドからTEモ−ドへの結合係数が存在す
ることにより、TMモ−ドの前進波は位相不整合により
TE高次モ−ドと結合しないでそのまま導波し、TMモ
−ドの後進波は位相整合によりTE高次モ−ドと結合す
る。また、前記導波型光アイソレ−タは、少なくともそ
の一部が磁気光学材料で形成された非相反性を示す光導
波路からなり、該導波路をチャネル化した。
(57) [Summary] [Objective] To obtain an inexpensive optical waveguide method and optical isolator suitable for optical integration. [Structure] An optical waveguide method and a guided optical isolator according to the present invention.
Is composed of a non-reciprocal optical waveguide, at least a part of which is formed of a magneto-optical material, and a phase constant due to a difference in traveling direction of light guided through the optical waveguide due to a magnetization vector in the magneto-optical material. Of the TM mode to the TE mode due to optical anisotropy and the forward wave of the TM mode is not coupled to the TE higher mode due to phase mismatch. , And the backward wave of the TM mode is coupled with the TE higher mode by phase matching. Further, the waveguide type optical isolator comprises an optical waveguide having a non-reciprocity, at least a part of which is formed of a magneto-optical material, and the waveguide is formed into a channel.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光通信、光計測等に用
いる光導波方法及びその実施装置に関し、特に、TMモ
−ドとTE高次モ−ドとの非相反な結合を利用した導波
型光アイソレータに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical waveguide method used for optical communication, optical measurement and the like, and an apparatus for implementing the same, and in particular, it utilizes a non-reciprocal coupling between a TM mode and a TE high-order mode. The present invention relates to a waveguide type optical isolator.

【0002】[0002]

【従来の技術】図13は従来のバルク型の光アイソレ−
タの動作原理を説明するための模式図であり、51、5
2はポ−ト、53、54はS偏光のみを透過する偏光ビ
−ムスプリッタ、55はYIG(イットリウム鉄ガ−ネ
ット)等のファラディ回転子、56はファラディ回転子
55中を通る磁界である。
2. Description of the Related Art FIG. 13 shows a conventional bulk type optical isolator.
FIG. 51 is a schematic diagram for explaining the operating principle of the
2 is a port, 53 and 54 are polarization beam splitters that transmit only S-polarized light, 55 is a Faraday rotator such as YIG (yttrium iron garnet), and 56 is a magnetic field passing through the Faraday rotator 55. .

【0003】従来の光アイソレ−タでは、図13に示す
ように、ポ−ト51から入射したS偏光(垂直な偏光)
を持つ光は偏光子53を透過し、ファラディ回転子55
を通ることにより偏波が45°回転し、同じ方向に45
°傾けられた検光子54を透過した後、ポ−ト52から
出射する。ポ−ト52から入射したS偏光(垂直から4
5°傾いた偏光)は偏光ビ−ムスプリッタ54を透過
し、ファラディ回転子55を通ることにより偏波が45
°回転して水平となり、偏光ビ−ムスプリッタ53に対
しP偏光(水平な偏波)となり透過することができな
い。
In a conventional optical isolator, as shown in FIG. 13, S-polarized light (vertical polarized light) incident from a port 51 is entered.
Light having a wavelength is transmitted through the polarizer 53, and the Faraday rotator 55
Polarization is rotated by 45 ° by passing through
After passing through the tilted analyzer 54, the light is emitted from the port 52. S-polarized light incident from port 52 (4 from vertical
The polarized light having a tilt of 5 ° passes through the polarization beam splitter 54 and passes through the Faraday rotator 55 so that the polarized light becomes 45
The light beam is rotated to become horizontal, becomes P-polarized light (horizontal polarized light) to the polarization beam splitter 53, and cannot be transmitted.

【0004】しかしながら、このバルク型の光アイソレ
−タはファラディ回転子55が高価な上、光軸の一致及
び偏光面が所定の角度を成すように、ファラディ回転子
55及び偏光ビ−ムスプリッタ54を高精度に調整する
必要があったため、信頼性に乏しく、非常に高価となる
問題があった。さらに、集積化が困難である問題があっ
た。そのため、集積化に適した導波型の光アイソレ−タ
の実現が待たれていた。
However, in this bulk type optical isolator, the Faraday rotator 55 is expensive, and the Faraday rotator 55 and the polarization beam splitter 54 are arranged so that the coincidence of the optical axes and the plane of polarization form a predetermined angle. Had to be adjusted with high precision, resulting in poor reliability and extremely high cost. Further, there is a problem that integration is difficult. Therefore, realization of a waveguide type optical isolator suitable for integration has been awaited.

【0005】従来提案された導波型光アイソレ−タ(文
献1:電子情報通信学会、光・量子エレクトロニクス研
究会、OQE89-29(1989)参照)の構造図を図14に示
す。
FIG. 14 shows the structure of a conventionally proposed waveguide type optical isolator (see Reference 1: IEICE, Opto-Quantum Electronics Research Group, OQE89-29 (1989)).

【0006】図14において、61は基板、62は磁気
光学膜の導波層、63は磁気光学膜62中の磁化ベクト
ル、64は金属装荷膜を用いたモ−ドセレクタである。
In FIG. 14, reference numeral 61 is a substrate, 62 is a waveguiding layer of a magneto-optical film, 63 is a magnetization vector in the magneto-optical film 62, and 64 is a mode selector using a metal loading film.

【0007】この導波型光アイソレ−タでは、TE基本
モ−ドで入射した順方行の光波はTM基本モ−ドと位相
不整合により、途中一部がTM基本モ−ドに変換される
が、出力端ではTE基本モ−ドのみがそのまま出力され
る。一方、TE基本モ−ドで入射した逆方向の光波は、
伝搬方向と垂直な磁化成分により非相反移相変化を受け
たTM基本モ−ドと位相整合状態となり、TM基本モ−
ドに変換され、モ−ドセレクタ64で吸収され、出力さ
れない。
In this waveguide type optical isolator, a forward traveling light wave incident in the TE basic mode is partially converted into the TM basic mode due to phase mismatch with the TM basic mode. However, at the output end, only the TE basic mode is output as it is. On the other hand, the light wave in the opposite direction that is incident in the TE basic mode is
The TM basic mode is in a phase matching state with the TM basic mode that has undergone a non-reciprocal phase shift change due to the magnetization component perpendicular to the propagation direction.
Converted to mode, absorbed by the mode selector 64, and not output.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、この構
造においては、大きな非相反移相量を得るため、TMモ
−ドがカットオフに近い領域が必要となり、この領域で
は、一般的に、TE基本モ−ドの位相定数はTM基本モ
−ドの位相定数より大きくなり、位相整合が不可能とな
る。そのため、前記文献1では、複屈折を仮定し位相整
合をとることを提案しているが、アイソレ−タ動作をす
るためには大きな複屈折が必要であり、またその複屈折
性の制御が困難であるため、現実には、素子の実現には
いたっていない。
However, in this structure, in order to obtain a large amount of non-reciprocal phase shift, a region in which the TM mode is close to the cutoff is required. The phase constant of the mode becomes larger than that of the TM basic mode, and phase matching becomes impossible. Therefore, in the above-mentioned Document 1, it is proposed to assume phase matching by assuming birefringence, but a large birefringence is required for isolator operation, and it is difficult to control its birefringence. Therefore, in reality, the device has not been realized yet.

【0009】つまり、スラブ導波路の場合、一般に、T
Eモードの位相定数はTMモードの位相定数より大き
く、特にカットオフ付近で顕著になる(構造異方性と呼
ばれる)。複屈折とはそもそもTEモードとTMモード
で屈折率が違うことを意味し、TMモードのほうが高い
屈折率となる複屈折性を示す複屈折材料を用いることに
より、前記構造異方性による位相不整合を捕える。しか
しながら、ちようど位相不整合を捕える量の材料を見つ
けることは困難で実現性がない(文献1の p27右欄を参
照)。
That is, in the case of a slab waveguide, T
The phase constant of the E mode is larger than the phase constant of the TM mode, and is particularly remarkable near the cutoff (called structural anisotropy). The birefringence originally means that the TE mode and the TM mode have different refractive indexes. By using a birefringent material exhibiting a birefringence in which the TM mode has a higher refractive index, the phase difference due to the structural anisotropy is caused. Catch the match. However, it is difficult and not feasible to find an amount of material that can catch the phase mismatch (see the right column of p27 in Ref. 1).

【0010】本発明は、前記問題点を解決するためにな
されたものであり、本発明の目的は、光集積化に適した
安価な光導波方法及び光アイソレ−タを提供することに
ある。
The present invention has been made to solve the above problems, and an object of the present invention is to provide an inexpensive optical waveguide method and optical isolator suitable for optical integration.

【0011】本発明の前記ならびにその他の目的及び新
規な特徴は、本明細書の記述及び添付図面によって明ら
かにする。
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

【0012】[0012]

【課題を解決するための手段】前記目的を達成するため
に、本発明の光導波方法及び導波型光アイソレ−タは、
少なくともその一部が磁気光学材料で形成された非相反
性を示す光導波路からなり、前記磁気光学材料中の磁化
ベクトルにより前記光導波路を導波する光の進行方向の
違いにより位相定数が相互に異なり、光学異方性により
TMモ−ドからTEモ−ドへの結合係数が存在すること
により、TMモ−ドの順方向の光波は位相不整合により
TE高次モ−ドと結合しないでそのまま導波し、TMモ
−ドの逆方向の光波は位相整合によりTE高次モ−ドと
結合することを最も主要な特徴とする。
In order to achieve the above object, an optical waveguide method and a waveguide type optical isolator according to the present invention are provided.
At least a part of the optical waveguide is formed of a magneto-optical material and exhibits non-reciprocity, and the magnetization vector in the magneto-optical material causes the phase constants to be mutually different due to a difference in traveling direction of light guided through the optical waveguide. In contrast, due to the existence of the coupling coefficient from the TM mode to the TE mode due to the optical anisotropy, the light wave in the forward direction of the TM mode does not combine with the TE higher-order mode due to the phase mismatch. The main feature is that the light waves are guided as they are and the light waves in the opposite direction of the TM mode are coupled with the TE higher-order mode by phase matching.

【0013】また、前記導波型光アイソレ−タは、少な
くともその一部が磁気光学材料で形成された非相反性を
示す光導波路からなり、該導波路をチャネル化したこと
を特徴とする。
The waveguide type optical isolator is characterized in that at least a part of the waveguide type optical waveguide is formed of a magneto-optical material and exhibits non-reciprocity, and the waveguide is formed into a channel.

【0014】すなわち、TMモ−ドとTE高次モ−ドと
の非相反な結合を利用した導波型光アイソレ−タであ
り、従来の技術とは動作原理、構造が異なる。
That is, it is a waveguide type optical isolator utilizing non-reciprocal coupling between the TM mode and the TE higher-order mode, and the operation principle and structure are different from those of the prior art.

【0015】[0015]

【作用】前述の手段によれば、磁気光学材料中の磁化ベ
クトルにより光導波路を導波する光の進行方向の違いに
より位相定数が相互に異なり、光学異方性によりTMモ
−ドからTEモ−ドへの結合係数が存在することによ
り、TMモ−ドの順方向の光波は位相不整合によりTE
高次モ−ドと結合しないでそのまま導波し、TMモ−ド
の逆方向の光波は位相整合によりTE高次モ−ドと結合
するので、光集積化に適した安価で信頼性の高い導波型
光アイソレ−タを得ることができる。
According to the above-mentioned means, the phase constants are different from each other due to the difference in the traveling direction of the light propagating in the optical waveguide due to the magnetization vector in the magneto-optical material, and the optical anisotropy changes the TM mode to the TE mode. Due to the existence of the coupling coefficient to the TE mode, the light wave in the forward direction of the TM mode is TE due to the phase mismatch.
It is guided as it is without being coupled to the higher-order mode, and the light wave in the opposite direction of the TM mode is coupled to the TE higher-order mode by phase matching. Therefore, it is inexpensive and highly suitable for optical integration. A waveguide type optical isolator can be obtained.

【0016】[0016]

【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0017】なお、実施例を説明するための全図におい
て、同一機能を有するものは同一符号を付けその繰り返
しの説明は省略する。
In all the drawings for explaining the embodiments, parts having the same function are designated by the same reference numerals and their repeated description will be omitted.

【0018】(実施例1)図1は、本発明を導波型光ア
イソレ−タに適用した実施例1の概略構成を示す斜視図
であって、1は磁気光学膜で形成されたリブ導波路、2
は磁気光学膜、3は基板、4は印加された外部磁界によ
り誘起された磁気光学薄膜中の磁化ベクトルM,5は座
標である。
(Embodiment 1) FIG. 1 is a perspective view showing a schematic structure of Embodiment 1 in which the present invention is applied to a waveguide type optical isolator, wherein 1 is a rib conductor formed of a magneto-optical film. Waveguide, 2
Is a magneto-optical film, 3 is a substrate, 4 is a magnetization vector M, 5 in the magneto-optical thin film induced by an applied external magnetic field, and coordinates are coordinates.

【0019】図1において、光は屈折率の高いリブ導波
路1を導波する。磁気光学薄膜中のy軸方向の磁化ベク
トル成分により非相反移相効果(文献2:電子情報通信
学会論文誌 '72/10 Vol.55-C No.10 pp550-708、文献
3:電子情報通信学会論文誌’88/5 Vol.j71-C No.5 pp
702-708参照)が生じ、TMモ−ド光の位相定数が順方
向の光波(以下、前進波という)と逆方向の光波(以
下、後進波という)と異なる。
In FIG. 1, light is guided through a rib waveguide 1 having a high refractive index. Non-reciprocal phase shift effect due to the magnetization vector component in the y-axis direction in the magneto-optic thin film (Reference 2: IEICE Transactions '72 / 10 Vol.55-C No.10 pp550-708, Reference 3: Electronic Information Communication) Academic journal '88 / 5 Vol.j71-C No.5 pp
702-708), and the phase constant of the TM mode light is different from the light wave in the forward direction (hereinafter referred to as forward wave) and the light wave in the reverse direction (hereinafter referred to as backward wave).

【0020】本実施例1のTM(ライク)モ−ドで動作
する光アイソレ−タとしての動作原理を図2に示す位相
定数により説明する。下側はTM(ライク)モ−ドの位
相定数β(TM)を、上側はTE(ライク)モ−ドの位
相定数β(TE)を示す。βx 11F,βx 11Bはそれぞれ、
非相反移相効果により分かれたTM基本Ex 11モード(M
arcartiliの表記法:Bell.Syst.Tech.J.48,2071-2102(1
969)参照)の前進波および後進波の位相定数を示し、
βy 11 ,βy 12 はそれぞれ、TE基本Ey 11モード、T
E高次Ey 12モードの位相定数を示す。図2ではβx 11F
<βx 11Bであるが、外部印加磁界の方向を変え磁化ベク
トルMの方向を逆転することにより、図3のようにβx
11F>βx 11Bとしても効果は同じである。TM基本Ex 11
モード後進波とTE高次Ey 12モードが位相整合(βx
11B=βy 12)状態にしてある。KはTMモ−ドとTEモ
−ドの結合係数を示し、z軸方向の磁化ベクトル成分が
引き起こす磁気光学効果や光学異方性等によって与えら
れる。さらに、次の関係を満足するようにする。
The operation principle of the optical isolator operating in the TM (like) mode of the first embodiment will be described with reference to the phase constant shown in FIG. The lower side shows the phase constant β (TM) of TM (like) mode, and the upper side shows the phase constant β (TE) of TE (like) mode. β x 11F and β x 11B are
TM basic E x 11 mode (M
arcartili notation: Bell.Syst.Tech.J.48,2071-2102 (1
969))) and shows the forward and backward wave phase constants,
β y 11 and β y 12 are the TE basic E y 11 mode and T, respectively.
E shows the phase constant of the higher-order E y 12 mode. In Figure 2, β x 11F
<Beta is a x 11B, by reversing the direction of magnetization vector M changes the direction of the externally applied magnetic field, as shown in FIG. 3 beta x
The effect is the same even if 11F > β x 11B . TM basic E x 11
Mode backward wave and TE higher-order E y 12 mode are phase-matched (β x
11B = β y 12 ) state. K represents the coupling coefficient between the TM mode and the TE mode, and is given by the magneto-optical effect, optical anisotropy, etc. caused by the magnetization vector component in the z-axis direction. Furthermore, the following relations should be satisfied.

【0021】[0021]

【数1】 [Equation 1]

【0022】[0022]

【数2】 KL=π/2+nπ ここで、Lは導波路長、Δ=|βx 11F−βx 11B|/2,
mおよびnは0または自然数である。このような状態を
満足させると、前進波のTM基本Ex 11モ−ドは位相不
整合(βx 11F≠βy 12)によりTE高次Ey 12モ−ドに結
合しないでそのまま導波路を出射し、後進波のTM基本
x 11モ−ドは位相整合(βx 11B=βy 12)によりTE高
次Ey 12モ−ドと完全に結合し導波路を出射する。m=
n=0のときのTMモ−ドからTEモ−ドへの光パワ−
の移行率を図4に示す。このように、TMモ−ドで動作
する導波型光アイソレ−タが実現できることがわかる。
KL = π / 2 + nπ where L is the waveguide length and Δ = | β x 11F −β x 11B | / 2
m and n are 0 or natural numbers. If this condition is satisfied, the TM fundamental E x 11 mode of the forward wave will not be coupled to the TE higher-order E y 12 mode due to phase mismatch (β x 11F ≠ β y 12 ), and will be used as it is in the waveguide. The TM fundamental E x 11 mode of the backward wave is completely coupled with the TE higher-order E y 12 mode by phase matching (β x 11B = β y 12 ) and is emitted from the waveguide. m =
Optical power from TM mode to TE mode when n = 0
The migration rate of is shown in FIG. As described above, it is understood that the waveguide type optical isolator operating in the TM mode can be realized.

【0023】図2の位相整合の条件は以下に示すように
達成される。非相反移相効果は基板3と空気の屈折率が
異なる非対称構造で、かつTMモ−ド光がカットオフに
近い条件に膜厚を設定する必要があるため、導波路がス
ラブ構造であると、図5に示すようにTMモードのカッ
トオフ付近では位相不整合(位相定数の差)が大きくな
り、TMモ−ドとTEモ−ドとはどの次数においても位
相整合がとれない。
The phase matching condition of FIG. 2 is achieved as follows. The non-reciprocal phase shift effect is an asymmetric structure in which the refractive index of the substrate 3 is different from that of air, and since it is necessary to set the film thickness under the condition that the TM mode light is close to the cutoff, the waveguide has a slab structure. As shown in FIG. 5, the phase mismatch (difference in phase constant) becomes large near the cutoff of the TM mode, and the TM mode and the TE mode cannot be phase matched in any order.

【0024】しかし、図1のようなチャネル構造にする
ことによって、第2図のような位相整合が実現される。
それを示すため、図6に導波路幅Wを変えたときのそれ
ぞれの位相定数の変化を示す。導波路の膜厚は非相反移
相量が大きくなるように形成されている。図6からわか
るようにA点でTM基本Ex 11モードとTE高次Ey 12
−ドは位相整合(βx 11B=βy 12)が生じている。ま
た、B点においてもTM基本Ex 11モードとTE高次Ey
13モ−ドは位相整合(βx 11B=βy 13)が生じており、
同じ効果が得られる。図6のB点における位相定数の関
係は、図7(βx 11F<βy 13)又は図8(βx 11F
βy 13)のようになる。さらに導波路幅を広げることに
より、さらに高次のTEモードとの位相整合をとること
もでき、同じ効果が得られる。
However, by adopting the channel structure as shown in FIG. 1, the phase matching as shown in FIG. 2 is realized.
In order to show that, FIG. 6 shows changes in the respective phase constants when the waveguide width W is changed. The film thickness of the waveguide is formed so that the non-reciprocal phase shift amount becomes large. As can be seen from FIG. 6, at the point A, the TM basic E x 11 mode and the TE high-order E y 12 mode have phase matching (β x 11B = β y 12 ). Also at the point B, the TM basic E x 11 mode and TE higher order E y
Phase 13x 11B = β y 13 ) occurs in 13 mode ,
The same effect is obtained. The relationship between the phase constants at point B in FIG. 6 is as shown in FIG. 7 (β x 11Fy 13 ) or FIG. 8 (β x 11F >
β y 13 ). By further widening the waveguide width, it is possible to achieve phase matching with a higher-order TE mode, and the same effect can be obtained.

【0025】結合係数Kは膜または基板の光学異方性
(誘電率テンソルの非対角成分εxy、εyz)により生
じ、基板に磁気光学膜を形成するときの膜応力によって
誘起される光弾性効果、磁気光学膜中の磁化ベクトルの
z軸またはx軸成分による磁気光学効果等により与えら
れる。後者は、磁化ベクトルが磁石のようなものである
ので、外部から磁界を掛けることにより容易に制御でき
る。これにより簡単に結合係数Kを誘起することができ
る。図1では磁化ベクトルの方向Mをy軸からz軸の方
向にθ傾け、z方向成分の磁化ベクトルを与えている。
The coupling coefficient K is caused by the optical anisotropy of the film or the substrate (non-diagonal components ε xy and ε yz of the dielectric constant tensor), and the light induced by the film stress when forming the magneto-optical film on the substrate. It is given by the elastic effect, the magneto-optical effect due to the z-axis or x-axis component of the magnetization vector in the magneto-optical film, and the like. In the latter case, the magnetization vector is like a magnet, so it can be easily controlled by applying a magnetic field from the outside. Thereby, the coupling coefficient K can be easily induced. In FIG. 1, the direction M of the magnetization vector is inclined by θ from the y-axis to the z-axis to give the magnetization vector of the z-direction component.

【0026】図9は、本実施例1の導波型光アイソレ−
タの製造法を説明するための各工程における断面図であ
る。
FIG. 9 shows a waveguide type optical isolator of the first embodiment.
6A to 6C are cross-sectional views in each step for explaining the manufacturing method of the magnetic tape.

【0027】本実施例1の導波型光アイソレ−タは、ま
ず、(a)に示すように、GGG(Gd3Ga512)、
カチオンド−プのGGG、NGG(Nd3Ga512)等
のガ−ネット基板3上にCe置換YIG等の磁気光学薄
膜2をRFスパッタにより形成する。順逆方向のアイソ
レ−ションを大きくするためには|βx 11F−βx 11B|を
大きくすることが必要で、そのために磁気光学効果の大
きなCe置換YIG膜を用いた(M.Gomi et al.Jpn.J.A
ppl.Phy.27, L1536(1988)、新宅他:第50回応物秋
季予稿集,28a-x-10参照)。
In the waveguide type optical isolator of the first embodiment, first, as shown in (a), GGG (Gd 3 Ga 5 O 12 ),
A magneto-optical thin film 2 of Ce-substituted YIG or the like is formed by RF sputtering on a garnet substrate 3 of cation-doped GGG, NGG (Nd 3 Ga 5 O 12 ), or the like. In order to increase the forward and reverse isolation, it is necessary to increase | β x 11F −β x 11B |, and for that reason, a Ce-substituted YIG film having a large magneto-optical effect was used (M.Gomi et al. Jpn.JA
ppl.Phy.27, L1536 (1988), Shintaku et al .: 50th Autumn Bibliographic Proceedings, 28a-x-10).

【0028】次に、(b)に示すように、フォトリゾグ
ラフィ技術を用い、磁気光学膜2上にフォトレジスト、
Cr,Ti等のマスク材6を形成する。
Next, as shown in (b), a photoresist is formed on the magneto-optical film 2 by using a photolithography technique.
A mask material 6 such as Cr or Ti is formed.

【0029】次に(c)に示すように、BCl3等の塩
素系ガスによるリアクティブイオンエッチング、Arイ
オン等によるイオンミ−リング、または、熱燐酸等によ
るケミカルエッチングを行い、導波路を形成する。
Next, as shown in (c), reactive ion etching with a chlorine-based gas such as BCl 3 or the like, ion milling with Ar ions or the like, or chemical etching with hot phosphoric acid or the like is performed to form a waveguide. .

【0030】最後に(d)に示すように、マスク材6を
除去し、磁気光学導波路1が形成される。
Finally, as shown in (d), the mask material 6 is removed and the magneto-optical waveguide 1 is formed.

【0031】(実施例2)図10は、本発明の実施例2
の導波型光アイソレ−タの概略構成を示す断面図であ
る。本実施例2の導波型光アイソレ−タは、図10に示
すように、磁気光学膜7を方形にし、SiO2膜等のカ
バ−層8で埋め込んだ構造である。
(Second Embodiment) FIG. 10 shows a second embodiment of the present invention.
3 is a cross-sectional view showing a schematic configuration of the waveguide type optical isolator of FIG. As shown in FIG. 10, the waveguide type optical isolator according to the second embodiment has a structure in which the magneto-optical film 7 is formed in a square shape and embedded with a cover layer 8 such as a SiO 2 film.

【0032】(実施例3)図11は、本発明の実施例3
の導波型光アイソレ−タの概略構成を示す断面図であ
る。本実施例3の導波型光アイソレ−タは、図11に示
すように、磁気光学膜2上に高屈折率膜9を形成し、こ
れをリブ型導波路に加工した。このような構造にするこ
とにより伝搬定数の非相反変化量が大きくなる。
(Third Embodiment) FIG. 11 shows a third embodiment of the present invention.
3 is a cross-sectional view showing a schematic configuration of the waveguide type optical isolator of FIG. In the waveguide type optical isolator of the third embodiment, as shown in FIG. 11, a high refractive index film 9 was formed on the magneto-optical film 2 and processed into a rib type waveguide. With such a structure, the amount of non-reciprocal change in the propagation constant increases.

【0033】(実施例4)図12は、本発明の実施例4
の導波型光アイソレ−タの概略構成を示す断面図であ
る。本実施例4の導波型光アイソレ−タは、図12に示
すように、前記実施例3における高屈折率膜9をストリ
ップ状10にしたもので、実施例3と同じ効果を得るこ
とができる。
(Fourth Embodiment) FIG. 12 shows a fourth embodiment of the present invention.
3 is a cross-sectional view showing a schematic configuration of the waveguide type optical isolator of FIG. As shown in FIG. 12, the waveguide type optical isolator according to the fourth embodiment is obtained by forming the high refractive index film 9 in the third embodiment into a strip shape 10 and can obtain the same effect as that of the third embodiment. it can.

【0034】前記の実施例1,2,3,4においては、
本発明を導波型光アイソレ−タに適用した例として説明
したが、本発明は、光サ−キュレ−タ等に適用できるこ
とは勿論である。例えば、前記光アイソレ−タの偏光子
/検光子を光ビ−ムの偏光成分によって入出力位置が大
きく異なるものに変えれば、光サ−キュレ−タが構成で
きる。
In the first, second, third, and fourth embodiments described above,
Although the present invention has been described as an example in which it is applied to a waveguide type optical isolator, it goes without saying that the present invention can be applied to an optical circulator and the like. For example, an optical circulator can be constructed by changing the polarizer / analyzer of the optical isolator to one whose input / output positions are largely different depending on the polarization component of the optical beam.

【0035】以上、本発明を実施例に基づき具体的に説
明したが、本発明は、前記実施例に限定されるものでは
なく、その要旨を逸脱しない範囲において種々変更し得
ることはいうまでもない。
Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention. Absent.

【0036】[0036]

【発明の効果】以上、説明したように、本発明によれ
ば、光集積化に適した安価で信頼性の高い導波型光アイ
ソレ−タを得ることができる。
As described above, according to the present invention, it is possible to obtain an inexpensive and highly reliable waveguide type optical isolator suitable for optical integration.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明を導波型光アイソレ−タに適用した実
施例1の概略構成を示す断面図、
FIG. 1 is a sectional view showing a schematic configuration of a first embodiment in which the present invention is applied to a waveguide type optical isolator,

【図2】 本実施例1の導波型光アイソレ−タの動作原
理を説明するための光のTEモ−ドおよびTMモ−ドの
位相定数を説明するための図、
FIG. 2 is a diagram for explaining the phase constants of TE mode and TM mode of light for explaining the operation principle of the waveguide type optical isolator of the first embodiment.

【図3】 本実施例1の導波型光アイソレ−タの動作原
理を説明するための光のTEモ−ドおよびTMモ−ドの
位相定数を説明するための図、
FIG. 3 is a diagram for explaining the TE and TM mode phase constants of light for explaining the operation principle of the waveguide type optical isolator of the first embodiment;

【図4】 本実施例1の導波型光アイソレ−タの動作を
説明するためのTMモ−ドからTEモ−ドへのパワ−の
移行率を示すグラフ、
FIG. 4 is a graph showing the power transfer rate from TM mode to TE mode for explaining the operation of the waveguide type optical isolator according to the first embodiment.

【図5】 導波型光アイソレ−タのTEモ−ドとTMモ
−ドの各次数におけるカットオフ付近では位相不整合が
大きくなることを示す図、
FIG. 5 is a diagram showing that the phase mismatch becomes large in the vicinity of the cutoff in each order of the TE mode and the TM mode of the waveguide type optical isolator,

【図6】 本実施例1の導波型光アイソレ−タの位相定
数と磁気光学導波路の幅との関係を示す図、
FIG. 6 is a diagram showing the relationship between the phase constant of the waveguide type optical isolator of the first embodiment and the width of the magneto-optical waveguide;

【図7】 本実施例1の導波型光アイソレ−タの位相定
数の関係を説明するための図、
FIG. 7 is a diagram for explaining the relationship of the phase constants of the waveguide type optical isolator of the first embodiment,

【図8】 本実施例1の導波型光アイソレ−タの位相定
数の関係を説明するための図、
FIG. 8 is a diagram for explaining the relationship between the phase constants of the waveguide type optical isolator of the first embodiment,

【図9】 本実施例1の導波型光アイソレ−タの製造工
程を説明するための各工程における断面図、
FIG. 9 is a sectional view in each step for explaining the manufacturing steps of the waveguide type optical isolator according to the first embodiment,

【図10】 本発明の実施例2の導波型光アイソレ−タ
の概略構成を示す断面図、
FIG. 10 is a sectional view showing a schematic configuration of a waveguide type optical isolator according to a second embodiment of the present invention,

【図11】 本発明の実施例3の導波型光アイソレ−タ
の概略構成を示す断面図、
FIG. 11 is a sectional view showing a schematic configuration of a waveguide type optical isolator according to a third embodiment of the present invention,

【図12】 本発明の実施例4の導波型光アイソレ−タ
の概略構成を示す断面図、
FIG. 12 is a sectional view showing a schematic configuration of a waveguide type optical isolator according to a fourth embodiment of the present invention,

【図13】 従来のバルク型光アイソレ−タの概略構成
図、
FIG. 13 is a schematic configuration diagram of a conventional bulk type optical isolator,

【図14】 従来提案された導波型光アイソレ−タの概
略構成図。
FIG. 14 is a schematic configuration diagram of a conventionally-guided optical isolator.

【符号の説明】[Explanation of symbols]

1…磁気光学リブ導波路、2…磁気光学膜、3…基板、
4…磁化ベクトルM、5…座標、6…マスク材、7…方
形磁気光学導波路、8…カバ−層、9,10…高屈折率
層、51,52…ポ−ト、53,54…偏光ビ−ムスプ
リッタ、55…ファラディ回転子、56…ファラディ回
転子55中を通る磁界、61…基板、62…磁気光学
膜、63…磁化ベクトル、64…金属モ−ドセレクタ。
1 ... Magneto-optical rib waveguide, 2 ... Magneto-optical film, 3 ... Substrate,
4 ... Magnetization vector M, 5 ... Coordinates, 6 ... Mask material, 7 ... Rectangular magneto-optical waveguide, 8 ... Cover layer, 9, 10 ... High refractive index layer, 51, 52 ... Port, 53, 54 ... Polarization beam splitter, 55 ... Faraday rotator, 56 ... Magnetic field passing through Faraday rotator 55, 61 ... Substrate, 62 ... Magneto-optical film, 63 ... Magnetization vector, 64 ... Metal mode selector.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 少なくともその一部が磁気光学材料で形
成された非相反性を示す光導波路からなり、前記磁気光
学材料中の磁化ベクトルにより前記光導波路を導波する
光の進行方向の違いにより位相定数が相互に異なり、光
学異方性によりTMモ−ドからTEモ−ドへの結合係数
が存在することにより、TMモ−ドの順方向の光波は位
相不整合によりTE高次モ−ドと結合しないでそのまま
導波し、TMモ−ドの逆方向の光波は位相整合によりT
E高次モ−ドと結合することを特徴とする光導波方法。
1. A non-reciprocal optical waveguide at least a part of which is formed of a magneto-optical material, and the magnetization vector in the magneto-optical material causes a difference in traveling direction of light guided through the optical waveguide. Since the phase constants are different from each other and there is a coupling coefficient from the TM mode to the TE mode due to optical anisotropy, the light wave in the forward direction of the TM mode is TE high-order mode due to phase mismatch. The optical wave in the opposite direction of the TM mode is guided by the waveguide without being coupled to the T mode, and the optical wave in the opposite direction of the TM mode is T
E An optical waveguide method characterized by coupling with a higher-order mode.
【請求項2】 少なくともその一部が磁気光学材料で形
成された非相反性を示す光導波路からなり、該導波路を
チャネル化したことを特徴とする導波型光アイソレ−
タ。
2. A waveguide type optical isolator, at least a part of which is formed of a non-reciprocal optical waveguide formed of a magneto-optical material, and the waveguide is formed into a channel.
Ta.
JP49393A 1993-01-06 1993-01-06 Optical waveguide method and its execution device Pending JPH06202057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49393A JPH06202057A (en) 1993-01-06 1993-01-06 Optical waveguide method and its execution device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49393A JPH06202057A (en) 1993-01-06 1993-01-06 Optical waveguide method and its execution device

Publications (1)

Publication Number Publication Date
JPH06202057A true JPH06202057A (en) 1994-07-22

Family

ID=11475287

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH06202057A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011123094A (en) * 2009-12-08 2011-06-23 National Institute Of Advanced Industrial Science & Technology Spot size converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011123094A (en) * 2009-12-08 2011-06-23 National Institute Of Advanced Industrial Science & Technology Spot size converter

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