JPH06203636A - Insulating paste and method of forming insulating layer using insulating paste - Google Patents
Insulating paste and method of forming insulating layer using insulating pasteInfo
- Publication number
- JPH06203636A JPH06203636A JP35945492A JP35945492A JPH06203636A JP H06203636 A JPH06203636 A JP H06203636A JP 35945492 A JP35945492 A JP 35945492A JP 35945492 A JP35945492 A JP 35945492A JP H06203636 A JPH06203636 A JP H06203636A
- Authority
- JP
- Japan
- Prior art keywords
- insulating
- paste
- insulating paste
- layer
- main component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 20
- 238000010304 firing Methods 0.000 claims abstract description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 44
- 239000000919 ceramic Substances 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 15
- 239000011733 molybdenum Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000010344 co-firing Methods 0.000 abstract description 4
- 239000003960 organic solvent Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229920000205 poly(isobutyl methacrylate) Polymers 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Inorganic Insulating Materials (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
(57)【要約】
【目的】 ＡｌＮ基板やＷ又はＭｏメタライズ層との同
時焼成が可能で、ＡｌＮ基板上やＷ又はＭｏメタライズ
層上に、これらとの密着性に優れた絶縁層を形成できる
絶縁ペーストを提供する。
【構成】 無機成分が、ＡｌＮ粉末と、ＡｌＮ粉末１０
０重量部に対して１〜１００重量部の、周期律表の２Ａ
及び３Ａ族元素、アルミニウム、及びケイ素の酸化物よ
りなる群から選ばれた少なくとも１種の酸化物の粉末と
からなり、ＡｌＮ基板１やＷメタライズ層３又はＭｏメ
タライズ層との同時焼成により、これらとの密着性に優
れた絶縁層２の形成が可能な絶縁ペースト。
(57) [Abstract] [Purpose] Simultaneous firing with an AlN substrate or a W or Mo metallized layer is possible, and an insulating layer having excellent adhesion with these can be formed on the AlN substrate or W or Mo metallized layer. Provide insulating paste. [Structure] Inorganic components are AlN powder and AlN powder 10
1 to 100 parts by weight with respect to 0 parts by weight, 2A of the periodic table
And a powder of at least one oxide selected from the group consisting of oxides of Group 3A elements, aluminum, and silicon, and by co-firing with AlN substrate 1, W metallized layer 3, or Mo metallized layer An insulating paste capable of forming an insulating layer 2 having excellent adhesion with.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子機器に用いる回路
部品等に絶縁層を形成するための絶縁ペースト、特に窒
化アルミニウムを主成分とするセラミックス基板上若し
くはタングステン及び／又はモリブデンを主成分とする
高融点メタライズ層上に絶縁層を形成するのに適した絶
縁ペースト、及びこの絶縁ペーストを用いて絶縁層を形
成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating paste for forming an insulating layer on a circuit component or the like used in electronic equipment, particularly on a ceramic substrate containing aluminum nitride as a main component or containing tungsten and / or molybdenum as a main component. The present invention relates to an insulating paste suitable for forming an insulating layer on a high melting point metallized layer, and a method for forming an insulating layer using this insulating paste.
【０００２】[0002]
【従来の技術】従来、窒化アルミニウムを主成分とする
セラミックス基板上、又はタングステン及び／又はモリ
ブデンを主成分とする高融点メタライズ層上に、絶縁ペ
ーストを用いて絶縁層を形成する場合、所定の絶縁性を
得ると共に、これらの基板又はメタライズ層との十分な
密着性を得るため、一般に低軟化点ガラスや結晶化ガラ
ス等を主体とした絶縁ペーストが使用されてきた。2. Description of the Related Art Conventionally, when an insulating layer is formed by using an insulating paste on a ceramics substrate containing aluminum nitride as a main component or a high melting point metallized layer containing tungsten and / or molybdenum as a main component, a predetermined amount is used. Insulating pastes mainly composed of low softening point glass or crystallized glass have been generally used in order to obtain insulating properties and sufficient adhesion to these substrates or metallized layers.
【０００３】しかし、かかるガラスを主成分とする絶縁
ペーストの焼成温度は、タングステン及び／又はモリブ
デンを主成分とする高融点メタライズ層形成時の焼成温
度よりも低いため、これらと同時焼成により形成するこ
とができない。従って、基板上に高融点メタライズ層を
前以て焼成して形成した後、その表面上の所定の位置に
絶縁ペーストをスクリーン印刷等の方法により塗布し、
再度焼成して絶縁層を形成せざるを得なかった。However, the firing temperature of such an insulating paste containing glass as a main component is lower than the firing temperature at the time of forming the high melting point metallized layer containing tungsten and / or molybdenum as a main component, so that the insulating paste is formed by simultaneous firing with these. I can't. Therefore, after the high melting point metallized layer is formed on the substrate by firing in advance, an insulating paste is applied to a predetermined position on the surface by a method such as screen printing,
It had to be fired again to form an insulating layer.
【０００４】一方、従来からアルミナを主成分とする絶
縁ペーストを用いて、アルミナ基板上に絶縁層を形成す
ることが行われている。このアルミナを主成分とする絶
縁ペーストを使用すれば、タングステン及び／又はモリ
ブデンを主成分とする高融点メタライズ層と焼成温度を
同一にすることができ、従ってこれら高融点メタライズ
層との同時焼成が可能である。On the other hand, conventionally, an insulating layer containing alumina as a main component has been used to form an insulating layer on an alumina substrate. If this insulating paste containing alumina as a main component is used, it is possible to make the firing temperature the same as that of the high melting point metallized layer containing tungsten and / or molybdenum as a main component, so that simultaneous firing with these high melting point metallized layers is possible. It is possible.
【０００５】しかし、アルミナを主成分とする絶縁層
は、窒化アルミニウムを主成分とするセラミックス基板
とも、タングステン又はモリブデンを主成分とする高融
点メタライズ層とも密着性が悪いという欠点がある。
又、かかるアルミナを主成分とする絶縁層を、窒化アル
ミニウムを主成分とするセラミックス基板上にタングス
テン又はモリブデンを主成分とする高融点メタライズ層
を介して形成した場合、セラミックス基板と高融点メタ
ライズ層との密着性にまで悪影響を及ぼす。However, the insulating layer containing alumina as a main component has a drawback that it has poor adhesion to both the ceramic substrate containing aluminum nitride as a main component and the high melting point metallized layer containing tungsten or molybdenum as a main component.
When the insulating layer containing alumina as a main component is formed on a ceramic substrate containing aluminum nitride as a main component through a refractory metallizing layer containing tungsten or molybdenum as a main component, the ceramic substrate and the refractory metallizing layer It also adversely affects the adhesion with.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、かかる従来
の事情に鑑み、窒化アルミニウムを主成分とするセラミ
ックス基板上やタングステン又はモリブデンを主成分と
する高融点メタライズ層上に密着性に優れた絶縁層を形
成でき、しかも前記セラミックス基板及び／又は高融点
メタライズ層との同時焼成により絶縁層の形成が可能な
絶縁ペーストを提供することを目的とする。In view of the above conventional circumstances, the present invention has excellent adhesiveness on a ceramic substrate containing aluminum nitride as a main component or a high melting point metallized layer containing tungsten or molybdenum as a main component. An object of the present invention is to provide an insulating paste capable of forming an insulating layer and capable of forming an insulating layer by co-firing with the ceramic substrate and / or the high melting point metallized layer.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明が提供する絶縁ペーストは、絶縁ペースト中
の無機成分が、窒化アルミニウム粉末と、窒化アルミニ
ウム粉末１００重量部に対して１〜１００重量部の、周
期律表の２Ａ及び３Ａ族元素、アルミニウム、及びケイ
素の酸化物よりなる群から選ばれた少なくとも１種の酸
化物の粉末とからなることを特徴とする。In order to achieve the above object, in the insulating paste provided by the present invention, the inorganic components in the insulating paste are aluminum nitride powder and 1 to 100 parts by weight per 100 parts by weight of aluminum nitride powder. 1 part by weight of at least one oxide selected from the group consisting of oxides of 2A and 3A elements of the periodic table, aluminum, and silicon.
【０００８】尚、本発明の絶縁ペーストも、従来の絶縁
ペーストと同様に有機バインダーや有機溶媒等からなる
有機成分を含むことは言うまでもない。本発明の絶縁ペ
ーストにおいては、有機バインダーとしてエチルセルロ
ースやニトロセルロース等のセルロース系樹脂、ポリイ
ソブチルメタクリレート等のアクリル系樹脂が好まし
く、有機溶媒としてテルピネオール、酢酸ブチルカルビ
トール、及びこれらの混合溶媒等が好ましい。Needless to say, the insulating paste of the present invention also contains an organic component such as an organic binder and an organic solvent, like the conventional insulating paste. In the insulating paste of the present invention, a cellulose resin such as ethyl cellulose or nitrocellulose, an acrylic resin such as polyisobutyl methacrylate are preferable as the organic binder, and terpineol, butyl carbitol acetate, and a mixed solvent thereof are preferable as the organic solvent. .
【０００９】上記本発明の絶縁ペーストの有利な使用方
法の一つとして、本発明の前記絶縁ペーストを、窒化ア
ルミニウムを主成分とするセラミックス基板形成用のグ
リーンシート上及び／又はタングステン又はモリブデン
を主成分とする高融点メタライズ層形成用の金属ペース
ト上に塗布し、その後この絶縁ペーストを前記グリーン
シート及び／又は前記金属ペーストと同時に非酸化性雰
囲気中で焼成することにより、絶縁層を形成することが
できる。As one of the advantageous uses of the insulating paste of the present invention, the insulating paste of the present invention is mainly used on a green sheet for forming a ceramic substrate containing aluminum nitride as a main component and / or tungsten or molybdenum. To form an insulating layer by applying it on a metal paste for forming a high-melting-point metallized layer as a component, and then firing this insulating paste simultaneously with the green sheet and / or the metal paste in a non-oxidizing atmosphere. You can
【００１０】[0010]
【作用】本発明の絶縁ペーストは、窒化アルミニウム
（ＡｌＮ）を主成分とするセラミックス基板上、又はタ
ングステン（Ｗ）及び／又はモリブデン（Ｍｏ）を主成
分とする高融点メタライズ層上に絶縁層を形成するため
のものであり、無機成分として主に窒化アルミニウム粉
末を用いることにより、これらセラミックス基板や高融
点メタライズ層との密着強度の高い絶縁層を形成するこ
とができる。The insulating paste of the present invention has an insulating layer formed on a ceramic substrate containing aluminum nitride (AlN) as a main component or a high melting point metallized layer containing tungsten (W) and / or molybdenum (Mo) as a main component. This is for forming, and by using mainly aluminum nitride powder as the inorganic component, it is possible to form an insulating layer having high adhesion strength with these ceramics substrates and high melting point metallized layers.
【００１１】又、窒化アルミニウム粉末を主成分とする
ことにより、窒化アルミニウムを主成分とするセラミッ
クス基板やタングステン及び／又はモリブデンを主成分
とする高融点メタライズ層を形成するための焼成温度と
同一温度で焼成できる、即ち前記セラミックス基板や高
融点メタライズ層形成のための焼成時に同時焼成するこ
とが可能である。尚、窒化アルミニウム粉末としては、
特に平均粒径が３.０μｍ以下のものを使用することに
よって、緻密な絶縁層を得ることができるので好まし
い。Further, by using aluminum nitride powder as a main component, the same temperature as the firing temperature for forming a ceramics substrate containing aluminum nitride as a main component and a high melting point metallized layer containing tungsten and / or molybdenum as a main component. It is possible to perform firing at the same time as firing for forming the ceramic substrate or the high melting point metallized layer. As the aluminum nitride powder,
In particular, it is preferable to use one having an average particle diameter of 3.0 μm or less because a dense insulating layer can be obtained.
【００１２】無機成分中の酸化物、即ち周期律表の２Ａ
及び３Ａ族元素、アルミニウム、及びケイ素の酸化物
は、窒化アルミニウムの焼成又は焼結を促進して絶縁層
を緻密化し、同時に絶縁層とセラミックス基板又は高融
点メタライズ層との密着強度を高める効果を有する。こ
れらの酸化物の中でも、特に酸化カルシウムと酸化イッ
トリウムは、窒化アルミニウムの焼結を促進させる効果
が大きいので、緻密で密着性に優れた絶縁層を得る上で
好ましい。Oxide in the inorganic component, ie 2A of the periodic table
And the oxides of Group 3A elements, aluminum, and silicon have the effect of promoting the firing or sintering of aluminum nitride to densify the insulating layer and, at the same time, enhancing the adhesion strength between the insulating layer and the ceramic substrate or the refractory metallized layer. Have. Among these oxides, calcium oxide and yttrium oxide are particularly effective in obtaining a dense insulating layer excellent in adhesion because they have a large effect of promoting the sintering of aluminum nitride.
【００１３】無機成分中における酸化物の割合は、窒化
アルミニウム粉末１００重量部に対して１〜１００重量
部の範囲とする。酸化物が１重量部未満では、絶縁層の
緻密化が不足し、窒化アルミニウムを主成分とするセラ
ミックス基板やタングステン及び／又はモリブデンを主
成分とする高融点メタライズ層との密着性が不十分とな
る。逆に酸化物が１００重量部を越えると、絶縁ペース
トの焼成温度が低くなって高融点メタライズ層等との同
時焼成ができなくなり、更には酸化物の揮発が顕著とな
るため、得られる絶縁層が緻密でなくなり、セラミック
ス基板や高融点メタライズ層との密着性が低下する。The proportion of the oxide in the inorganic component is in the range of 1 to 100 parts by weight with respect to 100 parts by weight of the aluminum nitride powder. When the amount of the oxide is less than 1 part by weight, the densification of the insulating layer is insufficient, and the adhesion with the ceramic substrate containing aluminum nitride as a main component or the refractory metallizing layer containing tungsten and / or molybdenum as a main component is insufficient. Become. On the other hand, when the amount of the oxide exceeds 100 parts by weight, the firing temperature of the insulating paste becomes low, the simultaneous firing with the high-melting-point metallization layer and the like becomes impossible, and further, the volatilization of the oxide becomes remarkable, so that the obtained insulating layer is obtained. Is not dense, and the adhesion to the ceramic substrate or the high melting point metallized layer is reduced.
【００１４】本発明の絶縁ペーストを用いて絶縁層を形
成するには、窒化アルミニウムを主成分とするセラミッ
クス基板上、あるいはタングステン及び／又はモリブデ
ンを主成分とする高融点メタライズ層上に、本発明の絶
縁ペーストをスクリーン印刷等の方法により塗布した
後、非酸化性雰囲気中で焼成すれば良い。焼成温度はペ
ースト中の酸化物量等により変えることができるが、通
常は１６５０〜１７００℃程度とする。To form an insulating layer using the insulating paste of the present invention, the present invention is applied on a ceramic substrate containing aluminum nitride as a main component or on a high melting point metallized layer containing tungsten and / or molybdenum as a main component. The insulating paste may be applied by a method such as screen printing and then baked in a non-oxidizing atmosphere. The firing temperature can be changed depending on the amount of oxide in the paste and the like, but it is usually about 1650 to 1700 ° C.
【００１５】又、本発明の絶縁ペーストは、上記セラミ
ックス基板や高融点メタライズ層との同時焼成が可能で
ある。即ち、絶縁ペーストを前記セラミックス基板形成
用のグリーンシート上や高融点メタライズ層形成用の金
属ペースト上に塗布し、その後この絶縁ペーストを前記
グリーンシートや金属ペーストと非酸化性雰囲気中で同
時焼成し、セラミックス基板や高融点メタライズ層の形
成と同時にそれらの上に絶縁層を形成することができ
る。Further, the insulating paste of the present invention can be co-fired with the ceramic substrate or the high melting point metallized layer. That is, the insulating paste is applied on the green sheet for forming the ceramics substrate or the metal paste for forming the high melting point metallized layer, and then this insulating paste is co-fired with the green sheet or the metal paste in a non-oxidizing atmosphere. The insulating layer can be formed on the ceramic substrate and the refractory metallized layer at the same time.
【００１６】特に、ＡｌＮを主成分とするセラミックス
基板形成用のグリーンシート上に、Ｗ又はＭｏを主成分
とする高融点メタライズ層形成用の金属ペーストをスク
リーン印刷等により塗布し、更にこの金属ペースト上に
本発明の絶縁ペーストを同様に塗布した後、必要に応じ
てこれらの塗布操作を数回繰り返し、絶縁ペーストを前
記グリーンシート及び金属ペーストと非酸化性雰囲気中
で同時焼成することも可能である。この同時焼成プロセ
スによれば、絶縁層の薄膜化と相俟って高密度実装タイ
プのパッケージが簡単なプロセスにて容易に製造でき
る。In particular, a metal sheet for forming a high melting point metallized layer containing W or Mo as a main component is applied onto a green sheet for forming a ceramics substrate containing AlN as a main component by screen printing or the like, and this metal paste is further applied. It is also possible to apply the insulating paste of the present invention to the above in the same manner, and then repeat these applying operations several times as necessary to co-fire the insulating paste with the green sheet and the metal paste in a non-oxidizing atmosphere. is there. According to this co-firing process, a high-density mounting type package can be easily manufactured by a simple process in combination with the thinning of the insulating layer.
【００１７】尚、本発明の絶縁ペーストにより絶縁層を
形成する場合、下地となるＡｌＮを主成分とするセラミ
ックス基板は、焼結助剤である酸化イットリウムの含有
量が３.０重量％以下、更には１.０重量％以下であるこ
とが良好な密着性を得る上で好ましい。又、Ｗ又はＭｏ
を主成分とする高融点メタライズ層には、Ａｌ2Ｏ3−Ｃ
ａＯ−ＳｉＯ2等のガラス成分が含まれていることが好
ましい。When an insulating layer is formed by the insulating paste of the present invention, the ceramic substrate containing AlN as a main component as a base has a yttrium oxide content of 3.0% by weight or less as a sintering aid, Further, it is preferably 1.0% by weight or less in order to obtain good adhesion. Also, W or Mo
The high-melting-point metallized layer containing Al as a main component contains Al 2 O 3 -C.
It is preferable that a glass component such as aO—SiO 2 is included.
【００１８】本発明の絶縁ペーストを用いて形成された
絶縁層は、前記のごとく窒化アルミニウムを主成分とす
るセラミックス基板や、タングステン又はモリブデンを
主成分とする高融点メタライズ層と優れた密着性を有
し、同時に緻密で耐薬品性並びに耐環境性に優れてい
る。具体的には、本発明に係わる絶縁層は、２５℃の３
規定硝酸水溶液に２４時間浸漬した後においても、絶縁
抵抗が１０10Ω以上の優れた耐薬品性を示す。The insulating layer formed by using the insulating paste of the present invention has excellent adhesion to the ceramic substrate containing aluminum nitride as a main component or the high melting point metallized layer containing tungsten or molybdenum as a main component as described above. At the same time, it is dense and has excellent chemical resistance and environmental resistance. Specifically, the insulating layer according to the present invention is 3 ° C. at 25 ° C.
Even after being immersed in a specified aqueous nitric acid solution for 24 hours, it exhibits excellent chemical resistance with an insulation resistance of 10 10 Ω or more.
【００１９】[0019]
【実施例】実施例１ 平均粒径１.５μｍのＡｌＮ粉末１００重量部に対し
て、表１に示す重量割合のＣａＯ粉末を添加混合し、こ
れに有機バインダーとしてエチルセルロース１０重量部
及び有機溶媒としてテルピネオール等の混合物４０重量
部を加えて混練することにより、それぞれ絶縁ペースト
を製造した。 Example 1 CaO powder in a weight ratio shown in Table 1 was added and mixed with 100 parts by weight of AlN powder having an average particle size of 1.5 μm, and 10 parts by weight of ethyl cellulose as an organic binder and an organic solvent as an organic solvent. 40 parts by weight of a mixture such as terpineol was added and kneaded to produce an insulating paste.
【００２０】得られた各絶縁ペーストを、ＡｌＮ基板上
及びＡｌＮ基板上に塗布し乾燥したＷペースト上に、そ
れぞれスクリーン印刷により所定の厚さに塗布して乾燥
し、更にその上にＷペーストを塗布して乾燥した後、窒
素雰囲気中にて１６５０〜１７００℃の温度でＷペース
トと絶縁ペーストを同時焼成した。Each of the obtained insulating pastes was applied on the AlN substrate and the AlN substrate and dried on the W paste by screen printing to a predetermined thickness and dried, and the W paste was further applied thereon. After coating and drying, the W paste and the insulating paste were simultaneously fired at a temperature of 1650 to 1700 ° C. in a nitrogen atmosphere.
【００２１】その結果、使用した各絶縁ペーストの試料
毎に、図１に示すごとくＡｌＮ基板１上に絶縁層２とＷ
メタライズ層３を順に積層した構成と、図２に示すごと
くＡｌＮ基板１上にＷメタライズ層３を介して絶縁層２
とＷメタライズ層３を順に積層した構成のものとが得ら
れた。As a result, for each insulating paste sample used, as shown in FIG. 1, the insulating layer 2 and W were formed on the AlN substrate 1.
As shown in FIG. 2, a structure in which the metallization layer 3 is sequentially laminated is used, and the insulating layer 2 is formed on the AlN substrate 1 with the W metallization layer 3 interposed therebetween.
And a W metallized layer 3 were sequentially laminated.
【００２２】得られた各試料について、形成された絶縁
層の破面を走査型電子顕微鏡で観察したところ、本発明
例である試料１の絶縁層は厚さ約２０μｍで緻密な組織
であることが認められたが、比較例である試料２の絶縁
層は組織が緻密ではなく、同じく試料３の絶縁層は焼結
していなかった。尚、本発明の試料１の絶縁層の絶縁抵
抗は１０12Ω以上と良好であった。When the fracture surface of the formed insulating layer of each of the obtained samples was observed with a scanning electron microscope, it was found that the insulating layer of Sample 1 of the present invention had a dense structure with a thickness of about 20 μm. However, the structure of the insulating layer of the sample 2 which is the comparative example is not dense, and the insulating layer of the sample 3 is not sintered. The insulation resistance of the insulating layer of Sample 1 of the present invention was as good as 10 12 Ω or more.
【００２３】次に、各試料の最上層であるＷメタライズ
層上にＮｉメッキ４を施し、その上に４２アロイのリー
ドフレーム６をＡｇ−Ｃｕロウ材５で接合した後、リー
ドフレーム６を矢印方向に引くことによってピール強度
を測定し、図１の構成の試料によりＡｌＮ基板１との間
の及び図２の構成の試料によりＷメタライズ層３との間
の絶縁層２の密着強度を求めた。結果を下記表１に、絶
縁ペーストの組成及び焼成温度と共に示した。Next, Ni plating 4 was applied on the W metallization layer which is the uppermost layer of each sample, and a lead frame 6 of 42 alloy was bonded thereon with Ag-Cu brazing material 5, and then the lead frame 6 was arrowed. The peel strength was measured by pulling in the direction, and the adhesion strength of the insulating layer 2 between the AlN substrate 1 by the sample having the configuration of FIG. 1 and the W metallized layer 3 by the sample of the configuration of FIG. 2 was determined. . The results are shown in Table 1 below together with the composition of the insulating paste and the firing temperature.
【００２４】[0024]
【表１】 組成(重量部) 焼成温度 絶縁層の密着強度(kg／mm2) 試料 AlN CaO （℃） 対AlN基板 対Wメタライズ層 １ 100 10 1700 2.5 2.3 ２＊ 100 105 1650 0.4 0.3 ３＊ 100 0.8 1700 0.2 0.1 （注）＊を付した試料は比較例である。[Table 1] Composition (parts by weight) Firing temperature Insulation layer adhesion strength (kg / mm 2 ) Sample AlN CaO (° C) vs. AlN substrate vs. W Metallized layer 1 100 10 1700 2.5 2.3 2 * 100 105 1650 0.4 0.3 3 * 100 0.8 1700 0.2 0.1 (Note) Samples marked with * are comparative examples.
【００２５】表１に示す結果から、ＡｌＮ粉末に対して
適切な量の酸化物（ＣａＯ）を含む本発明例の試料１
は、絶縁層２とＡｌＮ基板１及びＷメタライズ層３との
間の密着強度に共に優れているのに対して、比較例の試
料２及び３は絶縁層２とＡｌＮ基板１及びＷメタライズ
層３との間の密着強度が極めて低いことが判る。From the results shown in Table 1, Sample 1 of the present invention sample containing an appropriate amount of oxide (CaO) with respect to AlN powder.
Has excellent adhesion strength between the insulating layer 2 and the AlN substrate 1 and the W metallized layer 3, while the samples 2 and 3 of the comparative example have the insulating layer 2, the AlN substrate 1 and the W metallized layer 3. It can be seen that the adhesion strength between and is extremely low.
【００２６】実施例２ 平均粒径２.０μｍのＡｌＮ粉末１００重量部に対し
て、表２に示す重量割合の酸化物粉末を添加混合し、こ
れに有機バインダーとしてエチルセルロース８重量部及
び有機溶媒としてテルピネオール３０重量部を加えて混
練し、それぞれ絶縁ペーストを製造した。 Example 2 100 parts by weight of AlN powder having an average particle size of 2.0 μm was mixed with oxide powder in a weight ratio shown in Table 2, and 8 parts by weight of ethyl cellulose as an organic binder and an organic solvent as an organic solvent. 30 parts by weight of terpineol was added and kneaded to produce an insulating paste.
【００２７】得られた各絶縁ペーストを、実施例１と同
様に、ＡｌＮ基板上及びＡｌＮ基板上に塗布し乾燥した
Ｗペースト上に、それぞれスクリーン印刷により所定の
厚さに塗布して乾燥し、更にその上にＷペーストを塗布
して乾燥した後、窒素雰囲気中にて表２に示す温度でＷ
ペーストと絶縁ペーストを同時焼成した。Each of the obtained insulating pastes was applied on the AlN substrate and the W paste dried on the AlN substrate in the same manner as in Example 1 by screen printing to a predetermined thickness and dried, Further, after applying W paste on it and drying it, W paste is applied at a temperature shown in Table 2 in a nitrogen atmosphere.
The paste and insulating paste were co-fired.
【００２８】得られた各試料の絶縁層は、いずれも厚さ
が約１５μｍであって極めて緻密であり、絶縁抵抗はい
ずれも１０12Ω以上と良好であった。又、各試料につい
て、実施例１と同様にして、絶縁層とＡｌＮ基板及びＷ
メタライズ層との間の密着強度をそれぞれ測定した。結
果を表２に示した。The insulating layer of each of the obtained samples had a thickness of about 15 μm and was extremely dense, and the insulating resistance was 10 12 Ω or more. Also, for each sample, in the same manner as in Example 1, the insulating layer, the AlN substrate, and the W
The adhesion strength with the metallized layer was measured. The results are shown in Table 2.
【００２９】[0029]
【表２】 焼成温度 絶縁層の密着強度(kg／mm2) 試料 添加酸化物と重量部 （℃） 対AlN基板 対Wメタライズ層 ４ CaO 10／Al2O3 5 1680 3.1 2.7 ５ CaO 5／Al2O3 5／SiO2 2 1700 2.5 2.4 ６ CaO 10／Y2O3 5 1690 3.1 2.9 ７ CaO 10／CeO2 5 1700 2.2 2.0 ８ CaO 5／Al2O3 10／SmO2 5 1650 1.8 1.7[Table 2] Firing temperature Insulation strength of insulating layer (kg / mm 2 ) Sample- added oxide and parts by weight (° C) vs. AlN substrate vs. W metallized layer 4 CaO 10 / Al 2 O 3 5 1680 3.1 2.7 5 CaO 5 / Al 2 O 3 5 / SiO 2 2 1700 2.5 2.4 6 CaO 10 / Y 2 O 3 5 1690 3.1 2.9 7 CaO 10 / CeO 2 5 1700 2.2 2.0 8 CaO 5 / Al 2 O 3 10 / SmO 2 5 1650 1.8 1.7
【００３０】上記表２に示す結果から、本発明の絶縁ペ
ーストを使用すれば、緻密で十分な絶縁性を有し、Ａｌ
Ｎ基板及びＷメタライズ層との間の密着強度に優れた絶
縁層が得られることが判る。特に、絶縁ペーストの無機
成分中の酸化物として酸化カルシウムと酸化イットリウ
ムを用いると、より一層優れた密着強度が得られること
が判る。From the results shown in Table 2 above, when the insulating paste of the present invention is used, it has a dense and sufficient insulating property and
It can be seen that an insulating layer having excellent adhesion strength between the N substrate and the W metallized layer can be obtained. In particular, it is found that even better adhesion strength can be obtained by using calcium oxide and yttrium oxide as oxides in the inorganic component of the insulating paste.
【００３１】[0031]
【発明の効果】本発明の窒化アルミニウム粉末を主成分
とする絶縁ペーストによれば、窒化アルミニウムを主成
分とするセラミックス基板上やタングステン又はモリブ
デンを主成分とする高融点メタライズ層上に、これらの
グリーンシートや金属ペーストと同時焼成により、セラ
ミックス基板や高融点メタライズ層との密着性に優れ、
耐メッキ性も良好な絶縁層を形成することができる。INDUSTRIAL APPLICABILITY According to the insulating paste containing aluminum nitride powder as a main component of the present invention, these are formed on a ceramic substrate containing aluminum nitride as a main component or a refractory metallizing layer containing tungsten or molybdenum as a main component. By co-firing with a green sheet or metal paste, it has excellent adhesion to a ceramic substrate or high melting point metallized layer,
An insulating layer having good plating resistance can be formed.
【図１】本発明の絶縁ペーストを用いて、窒化アルミニ
ウム基板上に絶縁層を形成した実施例を示す側面図であ
る。FIG. 1 is a side view showing an example in which an insulating layer is formed on an aluminum nitride substrate using the insulating paste of the present invention.
【図２】本発明の絶縁ペーストを用いて、タングステン
メタライズ層上に絶縁層を形成した実施例を示す側面図
である。FIG. 2 is a side view showing an example in which an insulating layer is formed on a tungsten metallized layer using the insulating paste of the present invention.
１ ＡｌＮ基板 ２ 絶縁層 ３ Ｗメタライズ層 ４ Ｎｉメッキ ５ ロウ材 ６ リードフレーム 1 AlN substrate 2 Insulating layer 3 W metallized layer 4 Ni plating 5 Brazing material 6 Lead frame
───────────────────────────────────────────────────── フロントページの続き (72)発明者 請川 治平 兵庫県伊丹市昆陽北一丁目１番１号 住友 電気工業株式会社内伊丹製作所内 (72)発明者 仲田 博彦 兵庫県伊丹市昆陽北一丁目１番１号 住友 電気工業株式会社内伊丹製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jihei Jikawa 1-1-1 Kunyo Kita, Itami City, Hyogo Prefecture Sumitomo Electric Industries, Ltd. Uchi Itami Works (72) Hirohiko Nakata, Koyo Kitaichi Itami City, Hyogo Prefecture 1st-1st Sumitomo Electric Industries, Ltd. Itami Works
Claims (3)
ミニウム粉末と、窒化アルミニウム粉末１００重量部に
対して１〜１００重量部の、周期律表の２Ａ及び３Ａ族
元素、アルミニウム、及びケイ素の酸化物よりなる群か
ら選ばれた少なくとも１種の酸化物の粉末とからなるこ
とを特徴とする絶縁ペースト。1. An inorganic component in an insulating paste is an aluminum nitride powder, and 1 to 100 parts by weight relative to 100 parts by weight of aluminum nitride powder, oxidation of elements of Groups 2A and 3A of the periodic table, aluminum, and silicon. An insulating paste comprising a powder of at least one oxide selected from the group consisting of the following:
０μｍ以下であることを特徴とする、請求項１記載の絶
縁ペースト。2. The average particle size of the aluminum nitride powder is 3.
The insulating paste according to claim 1, which is 0 μm or less.
ルミニウムを主成分とするセラミックス基板形成用のグ
リーンシート上、及び／又はタングステン又はモリブデ
ンを主成分とする高融点メタライズ層形成用の金属ペー
スト上に塗布し、その後この絶縁ペーストを前記グリー
ンシート及び／又は前記金属ペーストと同時に非酸化性
雰囲気中で焼成することを特徴とする絶縁層の形成方
法。3. An insulating paste according to claim 1 on a green sheet for forming a ceramic substrate containing aluminum nitride as a main component and / or a metal paste for forming a high melting point metallized layer containing tungsten or molybdenum as a main component. A method for forming an insulating layer, which comprises: applying the insulating paste onto the upper surface and then firing the insulating paste simultaneously with the green sheet and / or the metal paste in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35945492A JP3778949B2 (en) | 1992-12-25 | 1992-12-25 | Insulating paste and method for forming insulating layer using insulating paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35945492A JP3778949B2 (en) | 1992-12-25 | 1992-12-25 | Insulating paste and method for forming insulating layer using insulating paste |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005041453A Division JP3928645B2 (en) | 2005-02-18 | 2005-02-18 | Insulating paste and method for forming insulating layer using insulating paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06203636A true JPH06203636A (en) | 1994-07-22 |
| JP3778949B2 JP3778949B2 (en) | 2006-05-24 |
Family
ID=18464582
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35945492A Expired - Lifetime JP3778949B2 (en) | 1992-12-25 | 1992-12-25 | Insulating paste and method for forming insulating layer using insulating paste |
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| Country | Link |
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| JP (1) | JP3778949B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008290314A (en) * | 2007-05-23 | 2008-12-04 | Tokuyama Corp | Metallized substrate and manufacturing method thereof |
-
1992
- 1992-12-25 JP JP35945492A patent/JP3778949B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008290314A (en) * | 2007-05-23 | 2008-12-04 | Tokuyama Corp | Metallized substrate and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| JP3778949B2 (en) | 2006-05-24 |
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