JPH0621135A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH0621135A JPH0621135A JP4174119A JP17411992A JPH0621135A JP H0621135 A JPH0621135 A JP H0621135A JP 4174119 A JP4174119 A JP 4174119A JP 17411992 A JP17411992 A JP 17411992A JP H0621135 A JPH0621135 A JP H0621135A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- semiconductor device
- oxide film
- metal oxide
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/553—Materials of bond wires not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【目的】短絡防止のための半導体装置用金属細線の製造
技術を提供する。
【構成】１は半導体装置用金属細線を示す。３は従来の
半導体装置用金属細線であり、絶縁性金属酸化膜２に覆
われている。絶縁性金属酸化膜２は、熱処理、電気分
解、酸化剤によって得られる。
【効果】電気スパークによるガス、塵挨の発生が無く、
ボンディング雰囲気を汚染せず、ワイヤボンディング装
置の改造を必要とせず、通常のボンディング装置にて、
ワイヤ起因の短絡を防止できる半導体装置が得られる。
(57) [Abstract] [Purpose] To provide a manufacturing technique of a thin metal wire for a semiconductor device for preventing a short circuit. [Structure] 1 shows a thin metal wire for a semiconductor device. Reference numeral 3 is a conventional thin metal wire for a semiconductor device, which is covered with an insulating metal oxide film 2. The insulating metal oxide film 2 is obtained by heat treatment, electrolysis, and an oxidizing agent. [Effect] There is no generation of gas or dust due to electric spark,
It does not pollute the bonding atmosphere, does not require modification of the wire bonding equipment,
A semiconductor device capable of preventing a short circuit caused by a wire can be obtained.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造技術
に関し、特にワイヤの表面に金属酸化膜を形成して絶縁
をはかり、ワイヤ起因の短絡を防止する半導体装置の製
造に有効な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing technique, and more particularly to a technique effective for manufacturing a semiconductor device in which a metal oxide film is formed on the surface of a wire to insulate it and prevent a short circuit caused by the wire. .
【０００２】[0002]
【従来の技術】一般的に、短絡を防止するワイヤは絶縁
被覆ワイヤとも呼ばれている。図２に従来の絶縁被覆ワ
イヤ８の構造を示す。従来考案、実施されてきたもの
は、絶縁性の有機系化合物１０を金属細線９の表面に適
当な厚みに塗布するものであった。2. Description of the Related Art Generally, a wire for preventing a short circuit is also called an insulating coated wire. FIG. 2 shows the structure of a conventional insulating coated wire 8. What has been conventionally devised and implemented has been to apply the insulating organic compound 10 to the surface of the thin metal wire 9 in an appropriate thickness.
【０００３】代表的な有機化合物としてホルマール等が
知られている。Formal and the like are known as typical organic compounds.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、上述の従来
技術を用いた絶縁被覆ワイヤを使用し、以下に示すよう
な問題があることを見いだした。SUMMARY OF THE INVENTION The present invention uses the above-described insulation-coated wire using the conventional technique and has found the following problems.
【０００５】すなわち、ボールボンディングにおいて、
電気スパークの熱によりイニシャルボールを形成する
際、短絡防止用の有機系の絶縁被覆材が燃焼する。この
とき二酸化炭素、水蒸気等のガスが発生し、ガスになり
得なかった物質が塵挨として残る。このガスと塵挨がイ
ニシャルボールとその付近の雰囲気を汚染する。そのた
め、ワイヤボンディング装置に発生ガス及び塵挨を吸引
する機能を新たに装備しなければならなかった。しか
し、完全に発生ガス及び塵挨を除去できず、イニシャル
ボールは有機系の不純物を含んでいた。That is, in ball bonding,
When the initial ball is formed by the heat of the electric spark, the organic insulating coating material for preventing short circuit burns. At this time, gases such as carbon dioxide and water vapor are generated, and substances that cannot be turned into gas remain as dust. This gas and dust pollute the initial ball and the atmosphere in the vicinity thereof. Therefore, it is necessary to newly equip the wire bonding device with a function of sucking generated gas and dust. However, the generated gas and dust could not be completely removed, and the initial balls contained organic impurities.
【０００６】この事から、従来仕様のままのワイヤボン
ディング装置では、従来の絶縁被覆ワイヤを使用するこ
とは困難であり、ワイヤボンディング装置の改造が必要
である。これは組立工程において装置の限定になり、絶
縁被覆ワイヤの汎用性を低くする事となる。From this, it is difficult to use the conventional insulating coated wire in the wire bonding apparatus with the conventional specifications, and it is necessary to modify the wire bonding apparatus. This limits the device in the assembly process, and reduces the versatility of the insulation-coated wire.
【０００７】また更に、従来使用されている有機系絶縁
被覆材の中にはキャピラリ等のボンディングツール、リ
ードフレームに付着するものも少なくなく、適当な頻度
で清掃を行わなくてはならない。Furthermore, among the organic insulating coating materials used in the past, there are not a few that adhere to bonding tools such as capillaries and lead frames, and cleaning must be performed at an appropriate frequency.
【０００８】本発明の目的は、改造等を行わず、従来仕
様のままでワイヤボンディング装置を使用することが可
能である、短絡防止のためのワイヤからなる半導体装置
の製造技術を提供することにある。An object of the present invention is to provide a manufacturing technique of a semiconductor device composed of a wire for preventing a short circuit, which allows the wire bonding device to be used with the conventional specifications without being modified. is there.
【０００９】[0009]
【課題を解決するための手段】本発明の半導体装置は、
表面に短絡防止のための絶縁性金属酸化膜が施されてい
るワイヤからなることを特徴とする。The semiconductor device of the present invention comprises:
It is characterized in that it consists of a wire whose surface is coated with an insulating metal oxide film for preventing a short circuit.
【００１０】[0010]
【作用】絶縁性金属酸化膜によってワイヤを覆うことに
より、ボンディング雰囲気を汚染する事なく、ワイヤボ
ンディングを行うことが出来る。By covering the wire with the insulating metal oxide film, the wire bonding can be performed without contaminating the bonding atmosphere.
【００１１】[0011]
【実施例】図１は、本発明の一実施例である半導体装置
を示す。1 shows a semiconductor device according to an embodiment of the present invention.
【００１２】図において、１は表面に短絡防止のための
絶縁性金属酸化膜が施されているワイヤ。その構成は、
絶縁被覆されていない通常使用されているワイヤ３を、
絶縁性金属酸化膜２で覆ったものである。絶縁性金属酸
化膜２の膜厚は絶縁抵抗値上、製造上から自由に設定す
ることができる。しかし、ダイパッド６に載置された半
導体チップ５上のパッド４とのワイヤの接合と、リード
７とのワイヤの接合において、電源及び電気信号が導通
不可とはならない程度の厚みとする。また、絶縁性金属
酸化膜２を形成する酸化前の材質と金属細線３の材質は
同一である必要はない。つまり半導体装置用金属細線３
の表面そのものに絶縁性金属酸化膜を形成することが困
難である場合には、半導体装置用金属細線３の表面に絶
縁性金属酸化膜が形成可能な金属で覆い、その金属全
て、もしくはその金属表面の一部を絶縁性金属酸化膜と
すれば良い。In the figure, reference numeral 1 is a wire whose surface is coated with an insulating metal oxide film for preventing a short circuit. Its composition is
Normally used wire 3 without insulation coating,
It is covered with an insulating metal oxide film 2. The thickness of the insulating metal oxide film 2 can be freely set in terms of insulation resistance and manufacturing. However, the thickness of the wire is such that the power supply and the electric signal cannot be electrically connected when the wire is bonded to the pad 4 on the semiconductor chip 5 mounted on the die pad 6 and the wire is bonded to the lead 7. Further, the material before the oxidation forming the insulating metal oxide film 2 and the material of the metal thin wire 3 do not have to be the same. That is, thin metal wires for semiconductor devices 3
When it is difficult to form an insulating metal oxide film on the surface itself, the surface of the thin metal wire 3 for a semiconductor device is covered with a metal capable of forming an insulating metal oxide film, and all the metal or the metal A part of the surface may be an insulating metal oxide film.
【００１３】ここで、半導体装置用金属細線１の断面形
状は円形が最適であるが、半導体装置用金属細線１の製
造上、あるいは、ワイヤボンディング工程上等、特に問
題にならなければどのような形状でもかまわない。ま
た、金属細線３の形状についても同様のことがいえる。Here, the cross-sectional shape of the thin metal wire 1 for a semiconductor device is optimally circular, but what is not a problem in manufacturing the thin metal wire 1 for a semiconductor device or in the wire bonding process, etc. The shape does not matter. The same applies to the shape of the thin metal wire 3.
【００１４】本発明の製造方法の一実施例として、ウェ
ッジボンディング用のアルミニウムワイヤを用いた半導
体装置について述べる。アルミニウムワイヤを絶縁性金
属酸化膜で覆う場合、アルマイト処理を行うことにより
絶縁性金属酸化膜を形成できる。アルマイト処理は、電
気分解によりアルミニウムを陽極酸化する方法であり。
この方法にてアルミニウム表面に絶縁性の金属酸化膜を
形成することが可能である。アルマイト処理の本発明へ
の適用は比較的容易であり、絶縁性金属酸化膜の膜厚を
自由に設定できる。ここで、絶縁性金属酸化膜を形成さ
せるタイミングとして、ワイヤボンディング前のワイヤ
に既に形成しておく方法と、ワイヤボンディング終了後
に形成する方法がある。半導体装置の組立上、コスト
上、品質上の立場からどちらを選んでも良い。As one embodiment of the manufacturing method of the present invention, a semiconductor device using an aluminum wire for wedge bonding will be described. When the aluminum wire is covered with the insulating metal oxide film, the insulating metal oxide film can be formed by performing alumite treatment. Alumite treatment is a method of anodizing aluminum by electrolysis.
By this method, it is possible to form an insulating metal oxide film on the surface of aluminum. The application of the alumite treatment to the present invention is relatively easy, and the thickness of the insulating metal oxide film can be freely set. Here, as the timing of forming the insulating metal oxide film, there are a method of forming it on the wire before wire bonding and a method of forming it after the wire bonding is completed. Either may be selected from the standpoints of assembling the semiconductor device, cost and quality.
【００１５】さて、絶縁性金属酸化膜２を形成する酸化
前の材質と金属細線２の材質が同一でない場合、つまり
金属細線３に金属細線３とは異なる材質を塗布して絶縁
性金属酸化膜を形成する場合、特に金属細線３の融点よ
りも絶縁性金属酸化膜２を形成する酸化前の材質の融点
がはるかに低い場合は、高温の熱処理にて絶縁性金属酸
化膜を形成する方法もある。When the material before the oxidation forming the insulating metal oxide film 2 and the material of the metal thin wire 2 are not the same, that is, a material different from the metal thin wire 3 is applied to the metal thin wire 3 to form the insulating metal oxide film. In the case of forming the insulating metal oxide film 2, especially when the melting point of the material before oxidation forming the insulating metal oxide film 2 is much lower than the melting point of the thin metal wire 3, a method of forming the insulating metal oxide film by high-temperature heat treatment is also used. is there.
【００１６】更に、絶縁性金属酸化膜２の形成方法とし
て、二酸化マンガン、硝酸、塩素酸等の酸化剤と反応さ
せる方法もある。Further, as a method of forming the insulating metal oxide film 2, there is also a method of reacting with an oxidizing agent such as manganese dioxide, nitric acid or chloric acid.
【００１７】本発明において、金属細線はその他の材
質、たとえば金線、銅線等ワイヤボンディングに適当な
材質であれば、半導体装置に適用は可能である。In the present invention, the thin metal wire can be applied to a semiconductor device as long as it is made of other materials, for example, gold wire, copper wire, and other materials suitable for wire bonding.
【００１８】本発明の半導体装置において、ボールボン
ディング、ステッチボンディングの接合部分において絶
縁性金属酸化膜により電源及び電気信号が導通不可とは
ならないことが確認されている。In the semiconductor device of the present invention, it has been confirmed that the insulating metal oxide film does not make the power supply and the electric signal non-conductive in the joint portion of the ball bonding and the stitch bonding.
【００１９】[0019]
【発明の効果】以上述べたように、本発明によれば、電
気スパークによるガス、塵挨の発生が無く、ボンディン
グ雰囲気を汚染せず、ワイヤボンディング装置の改造を
必要とせず、通常のボンディング装置にて、ワイヤ起因
の短絡を防止できる半導体装置が得られるという効果を
有する。As described above, according to the present invention, the generation of gas and dust due to electric spark does not occur, the bonding atmosphere is not polluted, the wire bonding apparatus does not need to be modified, and a normal bonding apparatus is used. Thus, there is an effect that a semiconductor device capable of preventing a short circuit caused by a wire can be obtained.
【図１】本発明の一実施例である半導体装置の概略断面
図。FIG. 1 is a schematic cross-sectional view of a semiconductor device that is an embodiment of the present invention.
【図２】従来技術を説明するための半導体装置用金属細
線を示す概略断面図。FIG. 2 is a schematic cross-sectional view showing a thin metal wire for a semiconductor device for explaining a conventional technique.
１・・・・本発明の一実施例である半導体装置用金属細
線 ２・・・・絶縁性金属酸化膜 ３、９・・金属細線 ４・・・・パッド ５・・・・半導体チップ ６・・・・ダイパッド ７・・・・リード ８・・・・絶縁被覆ワイヤ １０・・・・絶縁性の有機系化合物DESCRIPTION OF SYMBOLS 1 ... Metal thin wire for semiconductor device which is one embodiment of the present invention 2 ... Insulating metal oxide film 3, 9 ... Metal thin wire 4 ... Pad 5 ... Semiconductor chip 6 ... ... Die pad 7 ... Lead 8 ... Insulation coated wire 10 ... Insulating organic compound
Claims (4)
（以下ダイパッドと記す）と、該半導体チップ上の電極
（以下パッドと記す）と、該半導体チップの周囲に配さ
れたリードと、パッドとリードとを結ぶ金属細線（以下
ワイヤと記す）を封止してなる半導体装置において、特
に該ワイヤの表面に絶縁性の金属酸化膜が施されている
ことを特徴とする半導体装置。1. A semiconductor chip, a mounting portion of the semiconductor chip (hereinafter referred to as a die pad), electrodes on the semiconductor chip (hereinafter referred to as a pad), and leads arranged around the semiconductor chip, A semiconductor device in which a thin metal wire (hereinafter referred to as a wire) that connects a pad and a lead is sealed, and in particular, the surface of the wire is provided with an insulating metal oxide film.
いて、ワイヤの絶縁性金属酸化膜を高温の熱処理によっ
て形成することを特徴とする半導体装置の製造方法。2. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating metal oxide film of the wire is formed by high temperature heat treatment.
いて、ワイヤの絶縁性金属酸化膜を酸性を示す薬品を使
用して形成することを特徴とする半導体装置の製造方
法。3. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating metal oxide film of the wire is formed by using a chemical showing acidity.
いて、ワイヤの絶縁性金属酸化膜を電気分解を行うこと
により形成することを特徴とする半導体装置の製造方
法。4. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating metal oxide film of the wire is formed by electrolysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4174119A JPH0621135A (en) | 1992-07-01 | 1992-07-01 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4174119A JPH0621135A (en) | 1992-07-01 | 1992-07-01 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0621135A true JPH0621135A (en) | 1994-01-28 |
Family
ID=15972977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4174119A Pending JPH0621135A (en) | 1992-07-01 | 1992-07-01 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621135A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010114880A (en) * | 2008-11-04 | 2010-05-20 | Samsung Electronics Co Ltd | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
| WO2022164073A1 (en) * | 2021-02-01 | 2022-08-04 | 박수재 | Semiconductor package including bonding wire coated with oxide insulation, electronic system including same, and battery module including same |
| WO2022182175A1 (en) * | 2021-02-26 | 2022-09-01 | 신웅철 | Wire coating apparatus |
| JP2023030046A (en) * | 2017-05-29 | 2023-03-07 | ローム株式会社 | Semiconductor device and its manufacturing method |
| US20240096516A1 (en) * | 2021-01-22 | 2024-03-21 | Woong Chul Shin | Bonding wire for semiconductor package |
| US12614667B2 (en) | 2022-06-30 | 2026-04-28 | Samsung Electronics Co., Ltd. | Capacitor wire having porous structure in dielectric line and electronic device including the same |
-
1992
- 1992-07-01 JP JP4174119A patent/JPH0621135A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010114880A (en) * | 2008-11-04 | 2010-05-20 | Samsung Electronics Co Ltd | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
| JP2023030046A (en) * | 2017-05-29 | 2023-03-07 | ローム株式会社 | Semiconductor device and its manufacturing method |
| US20240096516A1 (en) * | 2021-01-22 | 2024-03-21 | Woong Chul Shin | Bonding wire for semiconductor package |
| WO2022164073A1 (en) * | 2021-02-01 | 2022-08-04 | 박수재 | Semiconductor package including bonding wire coated with oxide insulation, electronic system including same, and battery module including same |
| US12482783B2 (en) | 2021-02-01 | 2025-11-25 | Soo Jae Park | Semiconductor package including bonding wire coated with oxide insulation, electronic system including same, and battery module including same |
| WO2022182175A1 (en) * | 2021-02-26 | 2022-09-01 | 신웅철 | Wire coating apparatus |
| CN117529576A (en) * | 2021-02-26 | 2024-02-06 | Lti有限公司 | Wire coating equipment |
| US12614667B2 (en) | 2022-06-30 | 2026-04-28 | Samsung Electronics Co., Ltd. | Capacitor wire having porous structure in dielectric line and electronic device including the same |
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