JPH0621414A - Solid-state image sensing device and its manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a high-reliability solid-state image sensing device, in which a distinct picture can be obtained, and its manufacture. CONSTITUTION:In a solid-state image sensing device 1 in which a solid-state image sensing element 10 and lead 3 are wired by a bonding wire 6 in a space comprising the solid-state image sensing element 10 mounted in the recess 21 of a base 2 and a cover 5 attached via frame 4 with predetermined height, at least the bonding wire 6 is surrounded by a sealing compound 7 in the part other than that above effective picture elements 11 in the space. In the manufacture of the image sensing device, a predetermined quantity of the sealing compound 7 is applied to the rear face side of the cover 5, the bonding wire 6 is embedded in the sealing compound 7, and the cover 5 is attached onto the frame 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device in which a solid-state image pickup device and a bonding wire are sealed in a space formed between a base and a lid, and a method for manufacturing the same.

[0002]

2. Description of the Related Art An area sensor or a linear sensor using a solid-state image sensor such as a CCD is a hollow package made of ceramics or plastic in which the solid-state image sensor is housed in a sealed state. Has a structure that does not enter. A solid-state imaging device such as an area sensor or a linear sensor using such a hollow package will be described based on the sectional view of FIG. That is, this solid-state image pickup device 1 has the solid-state image pickup element 1 in the substantially central recess 21.
0 is mounted, a lead 3 attached with, for example, low-melting glass in a state of extending outward from the peripheral edge of the base 2, and a frame 4 on the lead 3 The transparent lid 5 made of glass or the like is attached.

The lid 5 is fitted in the notch of the frame 4, and is adhered by a sealant 7 made of low melting point glass or thermosetting resin. A sealed space is formed between the lid 5 attached to the frame 4 and the recess 21 of the base 2, and the solid-state imaging device 10 and the lead 3 are wired by the bonding wire 6 in the space. For this reason,
The solid-state image sensor 10 and a part of the lead 3 and the bonding wire 6 arranged in the space are protected from external moisture and dust.

In the method of manufacturing the solid-state image pickup device 1, first, the solid-state image pickup device 10 is bonded in the recess 21 of the base 2 with an epoxy adhesive of silver paste or the like, and the solid-state image pickup device 10 is manufactured.
The lead 3 provided on the peripheral portion of the base 2 is wired by the bonding wire 6. Then, a frame 4 having a predetermined height is attached on the lead 3, and a lid 5 made of glass or the like is bonded onto the frame 4 with a sealant 7. Then, the encapsulant 7 is completely cured by heat treatment at a predetermined temperature, and the solid-state imaging device 10, the bonding wire 6, and the lead 3 are
A part of is sealed in the space. The solid-state imaging device 1 manufactured in this manner takes in external light through the lid 5, and the effective pixels 11 formed on the solid-state imaging element 10 receive this light. Then, it is converted into a predetermined electric signal in the solid-state imaging device 10, and this is transmitted to the lead 3 via the bonding wire 6.

[0005]

However, such a solid-state image pickup device and its manufacturing method have the following problems. That is, since the bonding wire arranged in the space is made of a gold wire or the like, diffuse reflection of incident light occurs, which causes an adverse effect such as flare on the image of the solid-state imaging device. Further, when a low melting point glass is used for attaching the lid, the frame, and the leads, an image defect caused by a crystal defect due to α rays emitted from the low melting point glass may be caused, and the performance of the solid-state imaging device may be deteriorated. become. Furthermore, silicon dust, ceramic dust, and the like are scattered in the space and adhere to the solid-state imaging device, which adversely affects the image.

There is also a method of manufacturing a solid-state image pickup device in which a solid-state image pickup element is integrally sealed with a translucent epoxy resin or the like. The surface needs to be mirror-polished to remove the defects. Moreover, in order to prevent foreign matter from being mixed into the resin, it is necessary to make the manufacturing apparatus highly clean, which leads to an increase in the cost of the solid-state imaging device. Furthermore, when the resin is integrally sealed and cured, interface peeling between the solid-state image sensor and the resin and package cracks are likely to occur, resulting in insufficient reliability such as heat resistance, impact resistance and moisture resistance. turn into. Further, when a resin-made on-chip microlens is provided on the color filter, the lens effect is lost due to the translucent epoxy resin, which causes a problem of sensitivity deterioration. Therefore, an object of the present invention is to provide a solid-state image pickup device which can obtain a clear image and has high reliability, and a manufacturing method thereof.

[0007]

SUMMARY OF THE INVENTION The present invention is a solid-state image pickup device and a method of manufacturing the same, which have been made to solve such problems. That is, in this solid-state image pickup device, a solid-state image pickup element is mounted in a concave portion provided in a substantially central portion of a base, and leads are attached from a peripheral portion of the base to the outside, and a lead having a predetermined height is mounted on the lead. A space is formed between the recess by attaching the lid via the frame, and the solid-state image sensor and the lead are wired by a bonding wire in the space.
In this space, a sealant is provided in a portion surrounding at least the bonding wire in a portion of the solid-state image pickup device other than above the effective pixels. Moreover, a light blocking agent is included in this sealing agent.

Further, in the method of manufacturing the solid-state image pickup device, first, a solid-state image pickup element is connected to a recess provided in a substantially central portion of the base, and a lead attached to a peripheral portion of the base and a solid state. The image pickup device is connected with a bonding wire. Next, a predetermined amount of sealant is applied to the peripheral portion on the back surface side of the lid, the bonding wire is embedded in the sealant, and the lid is mounted on a frame having a predetermined height.

[0009]

[Function] Since the bonding wire is surrounded by the encapsulant at a portion other than above the effective pixel of the solid-state image sensor arranged in the space, the light hitting the bonding wire is reduced and the bonding wire is changed to the effective pixel. The reflected light that arrives will be reduced. By including a light blocking agent in the encapsulant, light from other than above the effective pixels of the solid-state image sensor is blocked, so that only necessary light reaches the solid-state image sensor. Further, since the sealant provided in the space seals the dust scattered in the space other than above the effective pixels of the solid-state image sensor, the dust does not adhere to the effective pixels.

In addition, as a method of manufacturing a solid-state image pickup device, a bonding wire is embedded by a predetermined amount of a sealing agent applied to the peripheral portion on the back surface side of the lid, and the lid is mounted on a frame to attach the lid. At the same time, the bonding wire can be surrounded by the sealant.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The solid-state image pickup device of the present invention and its manufacturing method will be described below with reference to the drawings. First, the solid-state imaging device of the present invention will be described. FIG. 1 shows a solid-state imaging device 1 according to the present invention.
It is sectional drawing explaining. The solid-state imaging device 1 includes a recess 21 provided in a substantially central portion of a base 2 and a frame 4 on the base 2.
It is composed of a hollow package in which a space is formed between the lid 5 and the lid 5, and the solid-state image sensor 10 is arranged in this space.

The base 2 made of ceramics, plastics or the like has the solid-state image pickup device 10 connected in a recess 21 at the substantially central portion thereof, and the solid-state image pickup device 10 extends outward from the peripheral edge of the base 2.
A lead 3 made of alloy or copper material is attached. The lead 3 and the solid-state image sensor 10 are electrically connected to each other through the bonding wire 6 in the space described above. A frame 4 having a predetermined height is attached on the lead 3, and a lid 5 made of glass or the like is fitted into a cutout portion of the frame 4. A sealant 7 made of, for example, an epoxy resin is used to connect the frame 4 and the lid 5,
The space between the lid 5 and the recess 21 is hermetically sealed.
Moreover, this sealant 7 is the effective pixel 1 of the solid-state image sensor 10.
The space other than the space above 1 is filled, and the bonding wire 6 in that part is surrounded.

That is, since the encapsulant 7 is not provided in the portion of the solid-state image pickup device 10 corresponding to the effective pixel region, light from the outside is incident only from the portion of the lid 5 corresponding to the effective pixel region. , Will be taken into the effective pixel 11 of the solid-state image sensor 10. Furthermore, the bonding wire 6 itself is protected against disconnection and contact, and the light reflected by the bonding wire 6 is blocked by the sealing agent 7, and it becomes difficult to reach the effective pixel 11. In particular, when the sealing agent 7 contains a light-shielding agent made of a black pigment or the like, light reflected by the bonding wire 6 or
It is possible to positively block unnecessary light that enters from other portions.

The sealing agent 7 may surround the bonding wire 6 and cover the side surface of the solid-state image pickup device 10 below the bonding wire 6. That is, since a large amount of dust such as silicon dust and cutting dust generated when the solid-state image sensor 10 is cut out adheres to the side surface of the solid-state image sensor 10, the side surface of the solid-state image sensor 10 is thus sealed. By covering with the agent 7, it is possible to prevent these dusts from scattering in the space.

Next, a method of manufacturing the solid-state image pickup device of the present invention will be described in the order of steps based on the sectional views of FIGS. First, as a mounting step, as shown in FIG. 2, the solid-state imaging device 10 is mounted in the recess 21 of the base 2. The solid-state image sensor 10 has a thickness of, for example, about 400 to 450 μm,
Leads 3 attached to the upper surface of the solid-state imaging device 10 and the base 2.
The top surface of the solid-state imaging device 10 is mounted on the solid-state imaging device 10 such that the top surface of the solid-state imaging device 10 is substantially aligned with the top surface of the solid state imaging device. The leads 3 and the frame 4 are previously attached to the peripheral portion of the base 2 by low melting glass or the like, and the outer lead surfaces of the leads 3 extending to the outside of the base 2 are plated with tin (Sn) or the like. .
Further, for example, an aluminum clad layer is formed on the inner lead surface of the lead 3. Then, the solid-state image pickup device 10 and the inner lead of the lead 3 are connected to each other by a thermocompression bonding method using a bonding wire 6 made of a gold wire or the like.

The height of the cutout portion 4a provided in the frame 4 determines the gap between the lid 5 and the solid-state image pickup device 10 and the gap between the lid 5 and the bonding wire 6 which will be described later.
It may be determined according to the loop height of the bonding wire 6 to be wired.

Next, as shown in FIG. 3 as a step of attaching the lid, a resin sealer or the like is provided on a predetermined area other than the portion corresponding to the effective pixel area of the solid-state image pickup device 10 on the back surface side of the lid 5 made of glass or the like. The sealant 7 is applied, and the lid 5 is attached on the notch 4 a of the frame 4. The sealant 7 made of a resin sealer is, for example, a thermosetting resin added with a curing agent to be semi-cured, and a light-shielding agent such as a black pigment is included as necessary.

By pressing the lid 5 coated with the sealant 7 on the back surface side onto the frame 4 while heating, the sealant 7 is brought into close contact between the lid 5 and the frame 4 and the space 5 The swelling (two-dot chain line in the figure) surrounds the bonding wire 6. Therefore, the amount and location of the sealant 7 applied to the back surface side of the lid 5, the viscosity, etc. are adjusted so as not to enter the space above the effective pixel 11, and the bonding wire 6 is excessively deformed. Do not touch the wire or short the tip.

As an example of this adjustment, a semi-cured sealant 7 is used and is applied to a thickness of 200 to 300 μm on the back surface side of the lid 5 except the portion corresponding to the effective pixel region. This thickness is slightly thicker than the gap between the lid 5 and the solid-state imaging device 10 described above, and is a value that can completely surround the bonding wire 6. In addition, the thickness and the like may be adjusted as necessary so that the side surface of the solid-state imaging device 10 is covered with the sealant 7. When the sealing agent 7 is applied, it is desirable that the sealing agent 7 is applied in a state where gaps for degassing the space are provided at the four corners of the lid 5.

Thus, the lid 5 is attached by heating and pressing, and the solid-state image pickup device 1 in which the solid-state image pickup device 10 is sealed by surrounding the bonding wire 6 with the sealant 7 is manufactured. . With such a manufacturing method, there is no foreign substance on the effective pixel area of the solid-state imaging device 10, and the solid-state imaging device 1 in which dust such as silicon dust does not scatter in the space is obtained, and the hollow package has high sensitivity characteristics and heat resistance. The property, impact resistance, moisture resistance and the like can be sufficiently obtained.

[0021]

As described above, the solid-state image pickup device of the present invention and the method of manufacturing the same have the following effects.
That is, according to this solid-state imaging device, since the bonding wire is surrounded by the encapsulant, the bonding wire is protected and, even when a gold wire or the like is used, irregular reflection of incident light causes a solid-state imaging device. Never break into. Therefore, the solid-state imaging device has high reliability without adverse effects of images such as flare. Further, this sealing agent can reduce the amount of α rays emitted from the low-melting glass used for attaching the leads and the like to reach the solid-state image pickup element, so that image defects can be reduced. Furthermore, since dust such as silicon dust does not scatter and adhere to the effective pixels of the solid-state image sensor, a high-quality clear image can be obtained.

Further, according to the method of manufacturing the solid-state image pickup device, since the bonding wire and the side surface of the solid-state image pickup device can be surrounded by the sealant together with the attachment of the lid, dust is collected in the effective pixel area of the solid-state image pickup device. It is possible to easily manufacture a solid-state imaging device in which, for example, no scattering occurs. For this reason, it is possible to reduce the cost of the solid-state imaging device without requiring the manufacturing device to be highly cleaned. Furthermore, a high-performance clear image can be obtained without impairing the sensitivity increasing effect of the on-chip microlenses on the color filter. Moreover, the solid-state image pickup device can sufficiently obtain the reliability such as heat resistance, impact resistance, and moisture resistance of the hollow package.

[Brief description of drawings]

FIG. 1 is a cross-sectional view illustrating a solid-state imaging device of the present invention.

FIG. 2 is a cross-sectional view illustrating a frame attaching process.

FIG. 3 is a cross-sectional view illustrating a lid attaching process.

FIG. 4 is a sectional view illustrating a conventional example.

[Explanation of symbols]

 1 Solid-State Imaging Device 2 Base 3 Lead 4 Frame 5 Lid 6 Bonding Wire 7 Sealant 10 Solid-state Imaging Device 11 Effective Pixel 21 Recess

Claims (3)

[Claims] 1. A base on which a solid-state imaging device is mounted in a recess in a substantially central portion, leads attached outward from a peripheral portion of the base, and a frame having a predetermined height above the leads. A solid-state imaging device comprising: a lid that is attached to form a space between the solid-state imaging device and the lead; and a bonding wire that connects the solid-state imaging device and the lead in the space. A solid-state image pickup device, wherein a sealant is provided at least in a state of surrounding the bonding wire in a portion of the solid-state image pickup element except a portion above an effective pixel. 2. The solid-state imaging device according to claim 1, wherein a light blocking agent is included in the sealing agent. 3. A solid-state image pickup device comprising a solid-state image pickup device connected to a substantially central portion of a base to which a frame having a predetermined height is attached, wired with bonding wires, and a lid attached to the frame. In the method, first, the solid-state imaging device is connected to a recess provided in substantially the center of the base, and a lead attached to a peripheral portion of the base and the solid-state imaging device are bonded by a bonding wire. Wiring step, applying a predetermined amount of the sealing agent to the peripheral portion of the back side of the lid,
Embedding the bonding wire with the sealant and attaching the lid on the frame.