JPH0621519A - Cooler and manufacture thereof - Google Patents
Cooler and manufacture thereofInfo
- Publication number
- JPH0621519A JPH0621519A JP4173130A JP17313092A JPH0621519A JP H0621519 A JPH0621519 A JP H0621519A JP 4173130 A JP4173130 A JP 4173130A JP 17313092 A JP17313092 A JP 17313092A JP H0621519 A JPH0621519 A JP H0621519A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cooler
- storage container
- container
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 45
- 230000005679 Peltier effect Effects 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 abstract description 48
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052724 xenon Inorganic materials 0.000 abstract description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052786 argon Inorganic materials 0.000 abstract description 11
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Landscapes
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ペルチェ素子のペルチ
ェ効果を利用して光検出素子や赤外線検出素子等からな
る半導体光検出器を冷却する冷却器及びその製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cooler for cooling a semiconductor photodetector including a photodetection element and an infrared detection element by utilizing the Peltier effect of a Peltier element, and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】ペルチェ効果を利用して光検出素子や赤
外線検出素子等からなる半導体光検出器を冷却する従来
の冷却器は、収納容器の内部に、ペルチェ効果で熱を吸
収する３段や４段等の多段のペルチェ素子を配置すると
ともに、この多段のペルチェ素子の最上位には、光検出
素子や赤外線検出素子を配置して該収納容器の内部に封
入し、１気圧の窒素ガスやキセノンガス中で光検出素子
や赤外線検出素子を冷却するようにしている。2. Description of the Related Art A conventional cooler for cooling a semiconductor photodetector including a photodetection element, an infrared detection element and the like by utilizing the Peltier effect has a three-stage structure in which a Peltier effect is used to absorb heat in a storage container. A multi-stage Peltier element such as four stages is arranged, and a photo-detecting element or an infrared detecting element is arranged at the top of this multi-stage Peltier element and sealed inside the storage container, and nitrogen gas of 1 atm or The photodetector and infrared detector are cooled in xenon gas.
【０００３】ところで、従来の上記冷却器は、いくら多
段のペルチェ素子を配置しても、以下に示す３つの理由
から冷却能力が向上しないという問題があった。即ち、
（１）収納容器の内部におけるガスの対流に伴い熱が伝
導して冷却能力が向上しない、（２）収納容器のリード
線に熱が伝導して冷却能力が向上しない、（３）放射に
伴い熱が伝導して冷却能力が向上しない、という理由か
らガス中にいくら多段のペルチェ素子を配置しても冷却
器の冷却能力が向上しなかった。By the way, the conventional cooling device has a problem that the cooling capacity is not improved for the following three reasons, no matter how many Peltier elements are arranged. That is,
(1) Heat is conducted due to convection of gas inside the storage container and cooling capacity is not improved, (2) Heat is conducted to lead wires of the storage container and cooling capacity is not improved, (3) Radiation is accompanied Because of the fact that heat is conducted and the cooling capacity is not improved, no matter how many Peltier elements are arranged in the gas, the cooling capacity of the cooler was not improved.
【０００４】上記（２）、（３）の理由を解消する方法
は全く無いが、（１）の理由は収納容器の内部を真空に
するという方法である程度解決でき、より低い温度で光
検出素子や赤外線検出素子を冷却することができた。There is no way to solve the reasons (2) and (3) above, but the reason (1) can be solved to some extent by evacuating the inside of the container, and the photodetector element can be operated at a lower temperature. The infrared detector could be cooled.
【０００５】しかしながら、収納容器の内部を真空にす
る場合、冷却開始時には確かに冷却効率が良いが、時間
の経過につれ水素等の熱伝導性の良好なガスが該内部に
発生して冷却効率が低下するという問題があった（図４
参照）。また、この真空化の方法だと収納容器を加熱し
なければならないが、赤外線検出素子の損傷防止の観点
から加熱できないので、充分なガス出しを行えず、熱伝
導率の良い水素、酸素等の脱ガスのため短期間で冷却効
率が著しく低下するという問題があった（図４参照）。However, when the inside of the storage container is evacuated, the cooling efficiency is certainly good at the start of cooling, but as time passes, a gas having a good thermal conductivity such as hydrogen is generated inside the container and the cooling efficiency is improved. There was a problem of decrease (Fig. 4
reference). Also, with this vacuum method, the storage container must be heated, but since it cannot be heated from the viewpoint of preventing damage to the infrared detection element, sufficient gas cannot be discharged, and hydrogen, oxygen, etc. with good thermal conductivity Due to the degassing, there was a problem that the cooling efficiency was significantly reduced in a short period of time (see FIG. 4).
【０００６】尚、上記（１）の理由を解消する方法とし
て、熱伝導率の低いアルゴンガス等を常圧で封入するこ
とも考えられるが、例えこの方法を採用しても、図５に
示す如く、冷却器の冷却能力は全く向上せず、上記真空
化の方法よりも効率が悪化せざるを得なかった。特に、
３段以上に積層されたペルチェ素子を利用する場合、ガ
ス中でいくら段数を増やしても、冷却器の冷却能率は全
く向上しなかった。As a method for solving the above-mentioned reason (1), it is conceivable to enclose argon gas or the like having a low thermal conductivity at normal pressure. Even if this method is adopted, it is shown in FIG. As described above, the cooling capacity of the cooler was not improved at all, and the efficiency was inevitably worse than that of the above vacuuming method. In particular,
When using a Peltier device laminated in three or more stages, the cooling efficiency of the cooler was not improved at all, no matter how many stages were increased in the gas.
【０００７】[0007]
【発明が解決しようとする課題】従来の冷却器は以上の
ように構成され、収納容器の内部におけるガスの対流に
伴い熱が伝導するので、冷却能力が向上しないという問
題点があった。この問題点は、収納容器の内部を真空に
するという方法で少々解決できたが、上述したような理
由で全面的な解決ができなかった。The conventional cooler configured as described above has a problem in that the cooling capacity is not improved because heat is conducted with the convection of gas inside the container. This problem could be solved a little by evacuating the inside of the storage container, but it could not be completely solved for the reasons described above.
【０００８】即ち、収納容器の内部を真空にする場合、
冷却開始時には確かに冷却効率が良いが、時間の経過に
つれ水素等の熱伝導性の良好なガスが該内部に発生して
冷却効率が低下するという大きな問題があった。また、
この真空化の方法だと収納容器を加熱しなければならな
いが、赤外線検出素子の損傷防止の観点から加熱できな
いので、充分なガス出しを行えず、熱伝導率の良い水
素、酸素等の脱ガスのため短期間で冷却効率が著しく低
下するという大きな問題があった。That is, when the inside of the storage container is evacuated,
Although the cooling efficiency is certainly good at the start of cooling, there is a big problem that a gas having a good thermal conductivity such as hydrogen is generated inside the inside with the passage of time and the cooling efficiency is lowered. Also,
With this vacuum method, the storage container must be heated, but since it cannot be heated from the viewpoint of preventing damage to the infrared detection element, sufficient gas cannot be discharged, and degassing of hydrogen, oxygen, etc., with good thermal conductivity. Therefore, there was a big problem that the cooling efficiency was significantly lowered in a short period of time.
【０００９】本発明は上記に鑑みなされたもので、冷却
効率を大幅に向上させることのできる冷却器及びその製
造方法を提供することを目的としている。The present invention has been made in view of the above, and an object of the present invention is to provide a cooler and a manufacturing method thereof, which can greatly improve the cooling efficiency.
【００１０】[0010]
【課題を解決するための手段】本発明においては上述の
目的を達成するため、収納容器の内部に、熱を吸収する
多段のペルチェ素子を積層配置するとともに、このペル
チェ素子には、半導体光検出器を配置して該収納容器の
内部に封入し、ペルチェ効果を利用して該半導体光検出
器を冷却するものにおいて、上記収納容器の内部に、１
０乃至１００ｍｍＨｇの熱伝導率の小さな気体を封入し
たことを特徴としている。In order to achieve the above-mentioned object in the present invention, a multistage Peltier element for absorbing heat is stacked inside the container, and the Peltier element is provided with a semiconductor photodetector. In which the semiconductor photodetector is cooled by using a Peltier effect, and the container is placed inside the storage container.
It is characterized by enclosing a gas having a small thermal conductivity of 0 to 100 mmHg.
【００１１】また、本発明においては上述の目的を達成
するため、半導体光検出器とペルチェ素子とを収納した
収納容器の内部を真空排気し、次いで、所定の温度でベ
ーキングして収納容器の内部のガスをガス抜きし、次い
で、収納容器の内部を真空排気し、収納容器の内部に１
０乃至１００ｍｍＨｇの熱伝導率の小さな気体を封入し
た後、収納容器を密封することを特徴としている。In order to achieve the above-mentioned object in the present invention, the inside of the storage container in which the semiconductor photodetector and the Peltier element are stored is evacuated, and then baked at a predetermined temperature to inside the storage container. The gas of the above is degassed, and then the inside of the storage container is evacuated to 1 inside the storage container.
It is characterized in that after containing a gas having a small thermal conductivity of 0 to 100 mmHg, the container is sealed.
【００１２】[0012]
【作用】本発明によれば、ある程度真空排気された収納
容器の内部に、１０〜１００ｍｍＨｇの熱伝導率が小さ
く、しかも、重量の重いアルゴンガス又はキセノンガス
からなる気体を充填するので、対流の発生を困難ならし
めることができ、冷却器の冷却効率を大幅に向上させる
ことができる。また、多段ペルチェ素子の使用を通じて
冷却面の温度を著しく下げることが可能となり、しか
も、信頼性の大幅な向上を図ることができる。According to the present invention, the inside of the storage container, which has been evacuated to some extent, is filled with a gas having a low thermal conductivity of 10 to 100 mmHg and a heavy weight, such as argon gas or xenon gas. If the generation is difficult, the cooling efficiency of the cooler can be significantly improved. Moreover, the temperature of the cooling surface can be remarkably lowered by using the multi-stage Peltier element, and the reliability can be greatly improved.
【００１３】さらに、アルゴンガス又はキセノンガスか
らなる気体が充填されているので、熱伝導率の良好な水
素等の発生を防止することができ、しかも、時間が経過
しても冷却能力が殆ど低下しないという特徴を有するの
で、冷却器の冷却効率を長時間に亘って維持することが
可能になるとともに、多段ペルチェ素子の使用を通じて
冷却面の著しい温度低下が期待できる。Further, since the gas composed of argon gas or xenon gas is filled, it is possible to prevent generation of hydrogen and the like having a good thermal conductivity, and moreover, the cooling capacity is almost lowered even with the passage of time. Since it has a feature that it does not, it is possible to maintain the cooling efficiency of the cooler for a long time, and it can be expected that the temperature of the cooling surface is significantly lowered by using the multi-stage Peltier element.
【００１４】[0014]
【実施例】以下、図１乃至図３に示す一実施例に基づき
本発明を詳述すると、本発明に係る冷却器及びその製造
方法は、ある程度真空排気された収納容器１の内部に、
１０〜１００ｍｍＨｇの熱伝導率が小さく、冷却効率を
長時間に亘って安定させる図示しない気体を封入するよ
うにしている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to an embodiment shown in FIGS. 1 to 3. The cooler and the method for manufacturing the same according to the present invention include:
A gas (not shown) that has a small thermal conductivity of 10 to 100 mmHg and stabilizes the cooling efficiency for a long time is enclosed.
【００１５】上記収納容器１は図１に示す如く、複数の
リード線３と真空排気管２とを垂下させたベース４上
に、略円筒形のパッケージ５が冠着され、このパッケー
ジ５の上面中央の孔には、受光窓６が嵌着されており、
該ベース４の上面中央には、４段のペルチェ素子７が配
置されるとともに、受光窓６の直下に位置するペルチェ
素子７には、半導体光検出器である光検出素子８が配置
されている。As shown in FIG. 1, the storage container 1 has a substantially cylindrical package 5 mounted on a base 4 on which a plurality of lead wires 3 and a vacuum exhaust pipe 2 are suspended, and an upper surface of the package 5. The light receiving window 6 is fitted in the central hole,
Four stages of Peltier elements 7 are arranged in the center of the upper surface of the base 4, and a photodetection element 8 which is a semiconductor photodetector is arranged in the Peltier element 7 located immediately below the light receiving window 6. .
【００１６】また、上記気体は１０〜１００ｍｍＨｇの
熱伝導率が小さく、しかも、重量の重いアルゴンガスや
キセノンガス等からなり、熱伝導率の良好な水素等の発
生を防止するとともに、対流の発生を困難ならしめる作
用を営み、且つ経時変化に伴い冷却能力が殆ど低下しな
い特徴を有している（図３参照）。そして、アルゴンガ
スやキセノンガスからなる気体は図２に示す如く、特に
１０ｍｍＨｇ、６０ｍｍＨｇ、又は１００ｍｍＨｇのガ
ス圧の範囲であるのが望ましい。尚、図３は６０ｍｍＨ
ｇキセノンガスの経時変化を示すグラフである。Further, the above-mentioned gas has a small thermal conductivity of 10 to 100 mmHg and is composed of heavy argon gas, xenon gas, or the like, and prevents generation of hydrogen or the like having a good thermal conductivity and generation of convection. It has a characteristic that the cooling capacity is hardly deteriorated with the passage of time (see FIG. 3). As shown in FIG. 2, it is desirable that the gas of argon gas or xenon gas has a gas pressure range of 10 mmHg, 60 mmHg, or 100 mmHg. Incidentally, FIG. 3 shows 60 mmH.
It is a graph which shows the time-dependent change of g xenon gas.
【００１７】従って、冷却器の冷却効率を向上させるに
は、先ず、図示しない真空排気装置に真空排気管２を接
続して光検出素子８とペルチェ素子７とを収納した収納
容器１の内部を矢印で示すように真空排気し、次いで、
５０℃位の温度でベーキングして収納容器１の内部のガ
スをガス抜きし、次いで、収納容器１の内部をある程度
真空排気し、収納容器１の内部に１０乃至１００ｍｍＨ
ｇのアルゴンガス又はキセノンガスを矢印で示すように
封入した後、真空排気管２を切断して収納容器１を密封
する。そしてその後、ペルチェ素子７のペルチェ効果を
利用して光検出素子８を冷却すれば良い。Therefore, in order to improve the cooling efficiency of the cooler, first, the inside of the storage container 1 in which the photo-detecting element 8 and the Peltier element 7 are stored by connecting the vacuum exhaust pipe 2 to a vacuum exhaust device (not shown). Evacuate as indicated by the arrow, then
Baking at a temperature of about 50 ° C. to degas the gas inside the storage container 1, and then evacuating the inside of the storage container 1 to some extent to obtain 10 to 100 mmH inside the storage container 1.
After g of argon gas or xenon gas is enclosed as indicated by an arrow, the vacuum exhaust pipe 2 is cut to seal the storage container 1. After that, the Peltier effect of the Peltier element 7 may be used to cool the photodetector element 8.
【００１８】上記構成によれば、ある程度真空排気され
た収納容器１の内部に、１０〜１００ｍｍＨｇの熱伝導
率が小さく、しかも、重量の重いアルゴンガス又はキセ
ノンガスを充填するので、対流の発生を困難ならしめる
ことができ、冷却器の冷却効率を向上させることができ
る。また、多段ペルチェ素子７の使用を通じて冷却面の
温度を下げることが可能となり、しかも、信頼性の向上
を図ることができる。According to the above construction, the inside of the storage container 1 that has been evacuated to a certain extent is filled with argon gas or xenon gas, which has a low thermal conductivity of 10 to 100 mmHg and is heavy, so that convection is not generated. If it is difficult, the cooling efficiency of the cooler can be improved. In addition, the temperature of the cooling surface can be lowered by using the multi-stage Peltier element 7, and the reliability can be improved.
【００１９】そして、アルゴンガス又はキセノンガスが
充填されているので、図３に示す如く、熱伝導率の良好
な水素等の発生を防止でき、しかも、時間が経過しても
冷却能力が殆ど低下しないので、冷却器の冷却効率を向
上させることが可能になるとともに、多段ペルチェ素子
７の使用を通じて冷却面の温度低下が期待できる。Since it is filled with argon gas or xenon gas, as shown in FIG. 3, it is possible to prevent generation of hydrogen or the like having a good thermal conductivity, and moreover, the cooling capacity is almost lowered even after a lapse of time. Therefore, the cooling efficiency of the cooler can be improved, and the temperature of the cooling surface can be expected to decrease by using the multi-stage Peltier element 7.
【００２０】さらに、図示しない赤外線検出素子の損傷
防止の観点から加熱できないので充分なガス出しを行え
ず、冷却効率の向上を図れなかったが、本発明によれ
ば、冷却器の冷却効率を向上させることができる。Further, from the viewpoint of preventing damage to the infrared detecting element (not shown), since it cannot be heated, sufficient gas cannot be discharged and the cooling efficiency cannot be improved. However, according to the present invention, the cooling efficiency of the cooler is improved. Can be made.
【００２１】[0021]
【発明の効果】以上のように本発明によれば、ある程度
真空排気された収納容器の内部に、１０〜１００ｍｍＨ
ｇの熱伝導率が小さく、しかも、重量の重いアルゴンガ
ス又はキセノンガスからなる気体を充填するので、対流
の発生を著しく困難ならしめることができ、安定した冷
却器の冷却効率を大幅に向上させることができるという
顕著な効果がある。また、多段ペルチェ素子の使用を通
じて冷却面の温度を安定させつつ大幅に下げることが可
能となり、しかも、信頼性の著しい向上を図ることがで
きるという顕著な効果がある。As described above, according to the present invention, 10 to 100 mmH is provided inside the storage container which is evacuated to some extent.
Since the gas having a low thermal conductivity of g and having a heavy weight such as argon gas or xenon gas is filled, it is possible to make convection extremely difficult, and to greatly improve the cooling efficiency of a stable cooler. There is a remarkable effect that it is possible. Further, by using the multi-stage Peltier element, it is possible to significantly reduce the temperature of the cooling surface while stabilizing it, and there is a remarkable effect that the reliability can be remarkably improved.
【００２２】そして、アルゴンガス又はキセノンガスか
らなる気体が充填されているので、熱伝導率の良好な水
素等の発生を確実に防止することができ、しかも、時間
が経過しても冷却能力が安定して殆ど低下しないという
特徴を有するので、冷却器の冷却効率を長時間に亘って
維持することが可能になるとともに、多段ペルチェ素子
の使用を通じて冷却面の温度低下が期待できるという顕
著な効果がある。Since the gas consisting of the argon gas or the xenon gas is filled, it is possible to reliably prevent the generation of hydrogen and the like having a good thermal conductivity, and moreover, the cooling ability is maintained even after a lapse of time. Since it has the characteristic of stable and hardly decreasing, it is possible to maintain the cooling efficiency of the cooler for a long time, and it is possible to expect a decrease in the temperature of the cooling surface through the use of the multi-stage Peltier element. There is.
【００２３】さらに、赤外線検出素子の損傷防止の観点
から加熱できないので充分なガス出しを行えず、冷却効
率の向上を全く図れなかったが、本発明によれば、冷却
器の冷却効率を著しく向上させることができるという顕
著な効果がある。Further, from the viewpoint of preventing damage to the infrared detecting element, since the heating cannot be performed, sufficient gas cannot be discharged and the cooling efficiency cannot be improved at all. However, according to the present invention, the cooling efficiency of the cooler is remarkably improved. There is a remarkable effect that it can be done.
【図１】本発明に係る冷却器及びその製造方法の一実施
例における冷却器を示す説明図である。FIG. 1 is an explanatory view showing a cooler according to an embodiment of a cooler and a manufacturing method thereof according to the present invention.
【図２】発明に係る冷却器及びその製造方法におけるガ
スの圧力による経時変化を示すグラフである。FIG. 2 is a graph showing changes with time in gas pressure in a cooler and a manufacturing method thereof according to the present invention.
【図３】本発明に係る冷却器及びその製造方法における
６０ｍｍＨｇキセノンガスの経時変化を示すグラフであ
る。FIG. 3 is a graph showing changes with time of 60 mmHg xenon gas in the cooler and the manufacturing method thereof according to the present invention.
【図４】従来における真空の経時変化を示すグラフであ
る。FIG. 4 is a graph showing changes in vacuum with time in the related art.
【図５】従来のガスの圧力による冷却温度を示すグラフ
である。FIG. 5 is a graph showing a cooling temperature according to a conventional gas pressure.
【符号の説明】 １…収納容器、７…ペルチェ素子、８…光検出素子（半
導体光検出器）[Explanation of Codes] 1 ... Storage container, 7 ... Peltier element, 8 ... Photodetector (semiconductor photodetector)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 31/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 31/02
Claims (2)
ペルチェ素子を積層配置するとともに、このペルチェ素
子には、半導体光検出器を配置して該収納容器の内部に
封入し、ペルチェ効果を利用して該半導体光検出器を冷
却する冷却器において、上記収納容器の内部に、１０乃
至１００ｍｍＨｇの熱伝導率の小さな気体を封入したこ
とを特徴とする冷却器。1. A multi-stage Peltier element that absorbs heat is stacked in a storage container, and a semiconductor photodetector is disposed in the Peltier device and sealed inside the storage container to obtain a Peltier effect. A cooler for cooling the semiconductor photodetector by utilizing a gas having a small thermal conductivity of 10 to 100 mmHg inside the storage container.
した収納容器の内部を真空排気し、次いで、所定の温度
でベーキングして収納容器の内部のガスをガス抜きし、
次いで、収納容器の内部を真空排気し、収納容器の内部
に１０乃至１００ｍｍＨｇの熱伝導率の小さな気体を封
入した後、収納容器を密封することを特徴とする冷却器
の製造方法。2. The inside of a container in which the semiconductor photodetector and the Peltier device are housed is evacuated and then baked at a predetermined temperature to degas the inside of the container,
Then, the inside of the storage container is evacuated, a gas having a small thermal conductivity of 10 to 100 mmHg is sealed inside the storage container, and then the storage container is sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173130A JP2581489B2 (en) | 1992-06-30 | 1992-06-30 | Cooler and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173130A JP2581489B2 (en) | 1992-06-30 | 1992-06-30 | Cooler and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0621519A true JPH0621519A (en) | 1994-01-28 |
| JP2581489B2 JP2581489B2 (en) | 1997-02-12 |
Family
ID=15954682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4173130A Expired - Lifetime JP2581489B2 (en) | 1992-06-30 | 1992-06-30 | Cooler and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2581489B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326376A (en) * | 2000-05-12 | 2001-11-22 | Hamamatsu Photonics Kk | Semiconductor energy detecting element |
| US6573640B1 (en) | 1997-11-19 | 2003-06-03 | Hamamatsu Photonics K.K. | Photodetecting device and image sensing apparatus using the same |
-
1992
- 1992-06-30 JP JP4173130A patent/JP2581489B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573640B1 (en) | 1997-11-19 | 2003-06-03 | Hamamatsu Photonics K.K. | Photodetecting device and image sensing apparatus using the same |
| JP2001326376A (en) * | 2000-05-12 | 2001-11-22 | Hamamatsu Photonics Kk | Semiconductor energy detecting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2581489B2 (en) | 1997-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0397251B1 (en) | Methods of producing vacuum devices and infrared detectors with a getter | |
| US4474036A (en) | Infra-red radiation detectors | |
| US5921461A (en) | Vacuum package having vacuum-deposited local getter and its preparation | |
| JP2737518B2 (en) | Cooling structure of infrared detector | |
| EP0464893B1 (en) | Infrared detectors and their manufacture | |
| JP4356250B2 (en) | Wireless receiver | |
| US6423575B1 (en) | Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication | |
| JPH09506712A (en) | Integrated Silicon Vacuum Micro Package for Infrared Devices | |
| KR101905197B1 (en) | Package for metal-ceramic substrate, and method for packaging such substrates | |
| US4577465A (en) | Oil free vacuum system | |
| US6155059A (en) | High capacity cryopump | |
| JP2581489B2 (en) | Cooler and method of manufacturing the same | |
| US5001903A (en) | Optimally staged cryopump | |
| EP0381631A2 (en) | Getter materials for the vacuum insulation of liquid hydrogen storage vessels or transport lines | |
| US4716742A (en) | Cryogenic system for radiation detectors | |
| US3259865A (en) | Dewar for cryogenic cooling of solid state device | |
| EP0406342B1 (en) | Dewar cryopumping using molecular sieve | |
| JPWO1999026298A1 (en) | Photodetector and imaging device using same | |
| JPS62230901A (en) | Sintering furnace for rare earth magnet alloy and sintering method thereof | |
| JPH062247Y2 (en) | Superconducting device | |
| CN100343983C (en) | Secondary packaging device of avalanche photodiode for infrared photodetection | |
| JPS63263751A (en) | Package for superconductor | |
| CA1315111C (en) | Optimally staged cryopump | |
| JP2821478B2 (en) | Cryopump | |
| JPH02298827A (en) | Cooled-type apparatus for detecting infrared ray |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313532 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081121 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081121 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091121 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091121 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101121 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111121 Year of fee payment: 15 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121121 Year of fee payment: 16 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121121 Year of fee payment: 16 |