JPH06244457A - Manufacture of light emitting diode - Google Patents
Manufacture of light emitting diodeInfo
- Publication number
- JPH06244457A JPH06244457A JP5005293A JP5005293A JPH06244457A JP H06244457 A JPH06244457 A JP H06244457A JP 5005293 A JP5005293 A JP 5005293A JP 5005293 A JP5005293 A JP 5005293A JP H06244457 A JPH06244457 A JP H06244457A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- crystal substrate
- single crystal
- light emitting
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000013078 crystal Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000002344 surface layer Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、炭化ケイ素ウイスカを
使用した発光ダイオードの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a light emitting diode using silicon carbide whiskers.
【０００２】[0002]
【従来の技術】発光ダイオードには、ＧａＰ，ＧａＡｓ
系のIII −Ｖ族化合物半導体材料が使用されている。そ
して、単結晶ウエハを基板とするエピタキシャル成長法
によってｐ−ｎ接合，ヘテロ接合等のダイオード構造を
基板表面に作り込んだ後、０．０５〜０．１ｍｍのサイ
ズに分割しチップとしている。作製されたチップは、通
常ランプケースに収められ、電極リード及びレンズを取
り付けることによって発光ダイオードランプとなる。従
来の発光ダイオードは、緑色より波長の長い発光色を呈
するものに限られている。緑色よりも短い波長をもつ青
色等の色調を発光させるものとして、ディスプレイ装置
の発光源として明るい輝度をもつ発光ダイオードが実用
化されていない。2. Description of the Related Art Light emitting diodes include GaP and GaAs.
Group III-V compound semiconductor materials have been used. Then, a diode structure such as a pn junction and a heterojunction is formed on the surface of the substrate by an epitaxial growth method using a single crystal wafer as a substrate, and then divided into a size of 0.05 to 0.1 mm to form a chip. The produced chip is usually housed in a lamp case, and an electrode lead and a lens are attached to form a light emitting diode lamp. Conventional light emitting diodes are limited to those that emit light having a wavelength longer than that of green. As a light emitting source of a display device, a light emitting diode having a bright brightness has not been put into practical use as a device for emitting a color tone such as blue having a wavelength shorter than that of green.
【０００３】[0003]
【発明が解決しようとする課題】開発段階の状況にある
青色発光ダイオードに使用される半導体材料としては、
炭化ケイ素，窒化ガリウム，硫化亜鉛等がある。しか
し、これらの半導体材料は、半導体の導電極性を制御す
ることができず、また結晶欠陥が多い欠点をもつ。その
ため、ダイオード特性が良好でないこと、発光効率が悪
いこと等、実用化するためには未解決の問題が多数存在
する。これら半導体材料のうち、炭化ケイ素は、広禁制
帯幅材料であり、ｐ型及びｎ型制御が比較的容易である
ことから、青色発光ダイオードの材料として期待されて
いる。しかし、炭化ケイ素から大きな口径をもつ単結晶
ウエハを得ることが困難であり、しかも結晶性に起因し
て結晶欠陥が多く、発光効率が低いこと等の問題があ
る。本発明は、このような問題を解消すべく案出された
ものであり、ＣＶＤ法で炭化ケイ素ウイスカを成長させ
る際にｐ−ｎ接合を作り込み、個々の炭化ケイ素ウイス
カを発光素子とすることにより、発光効率が高い高品質
の青色発光素子を高い生産性で製造することを目的とす
る。As the semiconductor material used for the blue light emitting diode in the state of development,
Examples include silicon carbide, gallium nitride, and zinc sulfide. However, these semiconductor materials have the drawback that the conductive polarity of the semiconductor cannot be controlled and that they have many crystal defects. Therefore, there are many unsolved problems for practical use, such as poor diode characteristics and poor luminous efficiency. Among these semiconductor materials, silicon carbide is a wide bandgap material and is relatively easy to control the p-type and n-type, and is therefore expected as a material for a blue light emitting diode. However, it is difficult to obtain a single crystal wafer having a large diameter from silicon carbide, and there are problems such as a large number of crystal defects due to crystallinity and low luminous efficiency. The present invention has been devised to solve such a problem, and a pn junction is formed when a silicon carbide whisker is grown by a CVD method to use each silicon carbide whisker as a light emitting element. Accordingly, it is an object of the present invention to manufacture a high-quality blue light emitting device having high luminous efficiency with high productivity.
【０００４】[0004]
【課題を解決するための手段】本発明の製造方法は、そ
の目的を達成するため、単結晶基板上に炭化ケイ素ウイ
スカをＣＶＤ法で成長させる際にＣＶＤ反応域に導入さ
れるドーピングガスを切り換え、前記炭化ケイ素ウイス
カの成長方向に関して導電極性が転換したｐ−ｎ接合を
形成し、前記単結晶基板の表面から前記ｐ−ｎ接合を超
える厚さをもつ絶縁膜で前記単結晶基板を覆い、前記絶
縁膜の表層部をエッチング除去することにより、前記ｐ
−ｎ接合部を露出させることなく、前記炭化ケイ素ウイ
スカの端部を露出させ、露出した前記炭化ケイ素ウイス
カの端部を一定の高さに揃え、前記炭化ケイ素ウイスカ
の露出部を含む前記絶縁膜の表面に、一方のオーミック
電極となる透明導電膜を形成し、前記単結晶基板の裏面
に、他方のオーミック電極となる金属膜を形成すること
を特徴とする。In order to achieve the object, the manufacturing method of the present invention switches the doping gas introduced into the CVD reaction zone when growing silicon carbide whiskers on a single crystal substrate by the CVD method. Forming a pn junction in which the conductivity polarity is changed with respect to the growth direction of the silicon carbide whiskers, and covering the single crystal substrate with an insulating film having a thickness exceeding the pn junction from the surface of the single crystal substrate, By removing the surface layer of the insulating film by etching, the p
-The end of the silicon carbide whisker is exposed without exposing the n-junction, the exposed end of the silicon carbide whisker is aligned at a constant height, and the insulating film includes the exposed part of the silicon carbide whisker. A transparent conductive film to be one ohmic electrode is formed on the front surface of, and a metal film to be the other ohmic electrode is formed on the back surface of the single crystal substrate.
【０００５】単結晶基板としては、たとえばＳｉウエハ
を使用し、単結晶基板上にウイスカ状の炭化ケイ素単結
晶をＣＶＤ法によって成長させる。この方法は、炭化ケ
イ素のエピタキシャル膜成長のために従来から採用され
ているものであり、シランガス及び炭化水素系ガスを主
成分として使用する。ドーピングガスとしては、ｎ型炭
化ケイ素には窒素Ｎ2 ，ｐ型炭化ケイ素にはトリメチル
アルミニウムＡｌ（ＣＨ3)3 が使用される。単結晶基板
は、ＣＶＤ反応管に挿入され、１０００〜１５００℃に
高温保持される。所定のドーパントを添加したガスをキ
ャリアガスと共に反応管に送り込むと、単結晶基板の表
面でＣＶＤ反応が開始する。その結果、ウイスカ状の炭
化ケイ素単結晶が単結晶基板の表面に成長する。As the single crystal substrate, for example, a Si wafer is used, and whisker-like silicon carbide single crystals are grown on the single crystal substrate by the CVD method. This method has been conventionally adopted for growing an epitaxial film of silicon carbide and uses silane gas and hydrocarbon-based gas as main components. As the doping gas, nitrogen N 2 is used for n-type silicon carbide and trimethylaluminum Al (CH 3 ) 3 is used for p-type silicon carbide. The single crystal substrate is inserted into a CVD reaction tube and kept at a high temperature of 1000 to 1500 ° C. When a gas added with a predetermined dopant is sent into the reaction tube together with the carrier gas, the CVD reaction starts on the surface of the single crystal substrate. As a result, whisker-shaped silicon carbide single crystals grow on the surface of the single crystal substrate.
【０００６】たとえば、図１（ａ）に示すように、単結
晶基板１の表面に先ずウイスカ状のｎ型炭化ケイ素２n
を成長させ、成長の途中でドーパントを窒素からトリメ
チルアルミニウムに切り換える。この切換えに伴って、
ｎ型炭化ケイ素２n の上にｐ型炭化ケイ素２p が更にウ
イスカ状に成長する。得られた炭化ケイ素ウイスカ２
は、ｐ−ｎ接合をもったウイスカになる。炭化ケイ素ウ
イスカ２を成長させた単結晶基板１の表面に、図１
（ｂ）に示すように炭化ケイ素ウイスカ２を覆う絶縁膜
３をデポジションする。このとき、絶縁膜３は、少なく
とも炭化ケイ素ウイスカ２のｐ−ｎ接合部を覆う厚みに
設定する。絶縁膜３は、たとえばＳｉＯ2 をＣＶＤ，真
空蒸着，スパッタリング等によってデポジションするこ
とにより設けられる。或いは、水ガラスを単結晶基板１
の表面に塗布し、焼成することによっても絶縁膜３を形
成することができる。For example, as shown in FIG. 1A, a whisker-shaped n-type silicon carbide 2 n is first formed on the surface of a single crystal substrate 1.
Are grown, and the dopant is switched from nitrogen to trimethylaluminum during the growth. With this switching,
The p-type silicon carbide 2 p further grows like a whisker on the n-type silicon carbide 2 n . Obtained silicon carbide whisker 2
Is a whisker with a pn junction. On the surface of the single crystal substrate 1 on which the silicon carbide whiskers 2 are grown, as shown in FIG.
As shown in (b), the insulating film 3 covering the silicon carbide whiskers 2 is deposited. At this time, the insulating film 3 is set to a thickness that covers at least the pn junction of the silicon carbide whisker 2. The insulating film 3 is provided by depositing SiO 2 , for example, by CVD, vacuum deposition, sputtering or the like. Alternatively, water glass is used as a single crystal substrate 1.
The insulating film 3 can also be formed by applying it to the surface of the substrate and baking it.
【０００７】絶縁膜３の表層部を、図１（ｃ）に示すよ
うに化学エッチングによって除去する。このとき、絶縁
膜３のエッチング深さは、炭化ケイ素ウイスカ２のｐ−
ｎ接合部が露出しない値に設定する。これにより、炭化
ケイ素ウイスカ２は、ｐ−ｎ接合部が絶縁膜３で覆わ
れ、先端部が絶縁膜３から突出した状態になる。絶縁膜
３から突出している炭化ケイ素ウイスカ２を、図１
（ｄ）に示すように研削除去し、その先端を揃える。研
削除去には、一般的なラッピング，ポリッシング等を採
用することができる。先端が揃えられた炭化ケイ素ウイ
スカ２を含む単結晶基板１の表面に、透明導電膜４を形
成する。透明導電膜４の材料としてはＳｎＯ2 ，ＩＴＯ
（ＩｎＯ2 −ＳｎＯ2 ）等が使用され、真空蒸着，スパ
ッタリング等で単結晶基板１の表面全域にわたっる透明
導電膜４が形成される。また、単結晶基板１の裏面に
も、同様にオーミック電極となる電極用金属膜５をデポ
ジションする。The surface layer portion of the insulating film 3 is removed by chemical etching as shown in FIG. At this time, the etching depth of the insulating film 3 is p− of the silicon carbide whisker 2.
Set to a value that does not expose the n-junction. As a result, in the silicon carbide whisker 2, the pn junction is covered with the insulating film 3 and the tip portion is projected from the insulating film 3. The silicon carbide whiskers 2 protruding from the insulating film 3 are shown in FIG.
As shown in (d), it is ground and removed, and its tips are aligned. For lapping and removal, general lapping, polishing or the like can be adopted. The transparent conductive film 4 is formed on the surface of the single crystal substrate 1 including the silicon carbide whiskers 2 whose tips are aligned. The material of the transparent conductive film 4 is SnO 2 , ITO
(InO 2 —SnO 2 ) or the like is used, and the transparent conductive film 4 is formed over the entire surface of the single crystal substrate 1 by vacuum vapor deposition, sputtering or the like. Further, on the back surface of the single crystal substrate 1 as well, a metal film 5 for electrodes, which similarly becomes an ohmic electrode, is deposited.
【０００８】このようにしてｐ−ｎ接合が作り込まれた
炭化ケイ素ウイスカ２は、単結晶基板１の全面に形成さ
れる。この単結晶基板１を所望のサイズに分割すると
き、分割されたそれぞれが一群の発光構造をもった発光
素子として使用される。すなわち、図２に示すように、
単結晶基板１の表面に形成された透明導電膜４から作製
されたオーミック電極４ｅをプラス側端子とし、裏面に
形成された透明導電膜４から作製されたオーミック電極
５ｅをマイナス側端子とする。そして、オーミック電極
４ｅ〜５ｅ間に電流を流すと、ｐ−ｎ接合近傍で発生し
た光が透明保護膜６を介して出射される。The silicon carbide whiskers 2 having the pn junction formed in this manner are formed on the entire surface of the single crystal substrate 1. When the single crystal substrate 1 is divided into desired sizes, each of the divided pieces is used as a light emitting element having a group of light emitting structures. That is, as shown in FIG.
The ohmic electrode 4e formed from the transparent conductive film 4 formed on the front surface of the single crystal substrate 1 serves as a positive side terminal, and the ohmic electrode 5e formed from the transparent conductive film 4 formed on the back surface serves as a negative side terminal. Then, when a current is passed between the ohmic electrodes 4e to 5e, the light generated near the pn junction is emitted through the transparent protective film 6.
【０００９】[0009]
【作用】本発明においては、ＣＶＤ法で炭化ケイ素ウイ
スカを成長させるとき、ドーピングガスを切り換えるこ
とにより、成長方向に関して導電極性を異ならせ、炭化
ケイ素ウイスカの内部にｐ−ｎ接合を作り込んでいる。
炭化ケイ素ウイスカは、ＣＶＤ法で成長したものであ
り、結晶欠陥が少ない優れた結晶性をもっている。ま
た、単結晶基板の表面全域に炭化ケイ素ウイスカを成長
させることができるため、多数の発光素子が同時に作製
される。その結果、得られた発光ダイオードは、発光効
率が高い青色発光素子として使用される。According to the present invention, when a silicon carbide whisker is grown by the CVD method, the doping gas is switched to change the conductivity polarity with respect to the growth direction, and a pn junction is formed inside the silicon carbide whisker. .
Silicon carbide whiskers are grown by the CVD method and have excellent crystallinity with few crystal defects. Further, since silicon carbide whiskers can be grown over the entire surface of the single crystal substrate, a large number of light emitting devices are manufactured at the same time. As a result, the obtained light emitting diode is used as a blue light emitting element having high luminous efficiency.
【００１０】[0010]
【実施例】（１００）Ｓｉウエハを、単結晶基板１とし
て使用した。圧力２００ｍｍトールの減圧雰囲気下で単
結晶基板１を９５０℃に保持し、シラン１０ｓｃｃｍ，
プロパン１０ｓｃｃｍ及びドーピングガスをキャリアガ
スと共にＣＶＤ反応装置に供給した。圧力を維持しなが
ら、先ず窒素ドープを伴った気相成長を２時間継続し、
長さ約２μｍのｎ型炭化ケイ素ウイスカ２n を成長させ
た。次いで、窒素ガスをテトラメチルアルミニウムに切
り換え、アルミニウムをドープしながら気相成長を３時
間継続させた。これにより、ｎ型炭化ケイ素ウイスカ２
n の上に、長さ約３μｍのｐ型炭化ケイ素ウイスカ２p
が成長した［図１（ａ）］。個々の炭化ケイ素ウイスカ
２は、成長度に多少の差があるものの、それぞれ直径約
１μｍ及び高さ５〜６μｍの範囲にあった。EXAMPLE A (100) Si wafer was used as the single crystal substrate 1. The single crystal substrate 1 was held at 950 ° C. under a reduced pressure atmosphere of 200 mmTorr, and silane 10 sccm,
Propane 10 sccm and doping gas were supplied to the CVD reactor along with a carrier gas. While maintaining the pressure, first, vapor phase growth with nitrogen doping was continued for 2 hours,
An n-type silicon carbide whisker 2 n having a length of about 2 μm was grown. Then, the nitrogen gas was switched to tetramethylaluminum, and vapor phase growth was continued for 3 hours while doping aluminum. As a result, the n-type silicon carbide whisker 2
p-type silicon carbide whiskers 2 p with a length of about 3 μm on n
Have grown [Fig. 1 (a)]. The individual silicon carbide whiskers 2 had a diameter of about 1 μm and a height of 5 to 6 μm, respectively, although there were some differences in the degree of growth.
【００１１】炭化ケイ素ウイスカ２が成長した単結晶基
板１を、厚さ約６μｍの絶縁膜３で覆った［図１
（ｂ）］。絶縁膜３は、ＣＶＤ法でＳｉＯ2 をデポジシ
ョンすることにより形成させた。ＣＶＤ反応は、温度５
００℃の常圧雰囲気下でシラン５０ｓｃｃｍ，酸素１０
０ｓｃｃｍ及び水素キャリアガスを流しながら、ＣＶＤ
反応を６０分継続させる反応条件を採用した。絶縁膜３
で覆われた単結晶基板１を緩衝型フッ酸溶液によりエッ
チングし、絶縁膜３を表層部から約３μｍの深さでエッ
チング除去した［図１（ｃ）］。露出した炭化ケイ素ウ
イスカ２をラッピングし、一定の高さに揃うように炭化
ケイ素ウイスカ２の先端部を研削除去した［図１
（ｄ）］。The single crystal substrate 1 on which the silicon carbide whiskers 2 have grown is covered with an insulating film 3 having a thickness of about 6 μm [FIG.
(B)]. The insulating film 3 was formed by depositing SiO 2 by the CVD method. The CVD reaction has a temperature of 5
Silane 50 sccm, oxygen 10 at atmospheric pressure atmosphere of 00 ℃
CVD with flowing 0 sccm and hydrogen carrier gas
Reaction conditions were adopted that allowed the reaction to continue for 60 minutes. Insulation film 3
The single crystal substrate 1 covered with was etched with a buffered hydrofluoric acid solution, and the insulating film 3 was removed by etching to a depth of about 3 μm from the surface layer portion [FIG. 1 (c)]. The exposed silicon carbide whisker 2 was lapped, and the tip portion of the silicon carbide whisker 2 was ground and removed so that the silicon carbide whiskers 2 were aligned at a constant height [Fig. 1
(D)].
【００１２】次いで、スパッタリングにより厚さ５μｍ
のＩＴＯをデポジションし、透明導電膜４を形成した。
また、単結晶基板１の裏面には、アニールによってオー
ミック電極５ｅとなる電極用金属膜５としてＴｉ−Ａｇ
を蒸着した［図１（ｅ）］。発光素子構造が作り込まれ
た単結晶基板１を、端子パターンに従って１ｃｍ2のサ
イズに分割し、発光素子を得た。基板側のオーミック電
極５ｅをプラスとし、発光面側のオーミック電極４ｅを
マイナスとして４０ｍＡの電流を供給すると、青色の発
光が得られた。出射された光の波長及び光度を分光光度
計で測定したところ、波長が４７０ｎｍで、２５ｍｃｄ
の明るさをもっていた。Then, the thickness is 5 μm by sputtering.
Then, ITO was deposited to form a transparent conductive film 4.
On the back surface of the single crystal substrate 1, Ti-Ag is formed as an electrode metal film 5 to be an ohmic electrode 5e by annealing.
Was deposited [FIG. 1 (e)]. The single crystal substrate 1 having the light emitting device structure built therein was divided into 1 cm 2 in size according to the terminal pattern to obtain a light emitting device. When the ohmic electrode 5e on the substrate side was positive and the ohmic electrode 4e on the light emitting surface side was negative and a current of 40 mA was supplied, blue light emission was obtained. When the wavelength and luminous intensity of the emitted light were measured with a spectrophotometer, the wavelength was 470 nm, and 25 mcd
Had the brightness of.
【００１３】[0013]
【発明の効果】以上に説明したように、本発明において
は、Ｓｉウエハ等の単結晶基板上に炭化ケイ素ウイスカ
を成長させるとき、ウイスカの成長と同時にｐ−ｎ接合
を形成している。ｐ−ｎ接合をもつ炭化ケイ素ウイスカ
が形成された単結晶基板は、通常の半導体デバイスプロ
セス技術によって発光素子構造となる。この方法による
とき、従来法によって製造可能な炭化ケイ素の口径によ
る制約を受けることなく、単結晶基板の表面全域を活用
して発光素子を作製することができる。しかも、得られ
た発光ダイオードは、結晶欠陥が少なく発光効率及び明
度の高い青色発光素子となる。As described above, in the present invention, when a silicon carbide whisker is grown on a single crystal substrate such as a Si wafer, a pn junction is formed simultaneously with the growth of the whisker. A single crystal substrate on which a silicon carbide whisker having a pn junction is formed has a light emitting device structure by a normal semiconductor device process technology. According to this method, the light emitting element can be manufactured by utilizing the entire surface of the single crystal substrate without being restricted by the diameter of silicon carbide which can be manufactured by the conventional method. Moreover, the obtained light emitting diode becomes a blue light emitting element with few crystal defects and high luminous efficiency and brightness.
【図１】 本発明に従った発光素子の製造プロセスFIG. 1 is a manufacturing process of a light emitting device according to the present invention.
【図２】 発光素子の構造FIG. 2 Structure of light emitting element
１：Ｓｉウエハー等の単結晶基板 ２：炭化ケイ素ウ
イスカ ２n ：ｎ型炭化ケイ素 ２p ：ｐ型炭化ケ
イ素 ３：絶縁膜 ４：透明導電膜 ５：電極用
金属膜 ４ｅ，５ｅ：オーミック電極1: Single crystal substrate such as Si wafer 2: Silicon carbide whiskers 2 n : n-type silicon carbide 2 p : p-type silicon carbide 3: insulating film 4: transparent conductive film 5: metal film for electrode 4e, 5e: ohmic electrode
Claims (1)
ＶＤ法で成長させる際にＣＶＤ反応域に導入されるドー
ピングガスを切り換え、前記炭化ケイ素ウイスカの成長
方向に関して導電極性が転換したｐ−ｎ接合を形成し、 前記単結晶基板の表面から前記ｐ−ｎ接合を超える厚さ
をもつ絶縁膜で前記単結晶基板を覆い、 前記絶縁膜の表層部をエッチング除去することにより、
前記ｐ−ｎ接合部を露出させることなく、前記炭化ケイ
素ウイスカの端部を露出させ、 露出した前記炭化ケイ素ウイスカの端部を一定の高さに
揃え、 前記炭化ケイ素ウイスカの露出部を含む前記絶縁膜の表
面に、一方のオーミック電極となる透明導電膜を形成
し、 前記単結晶基板の裏面に、他方のオーミック電極となる
金属膜を形成することを特徴とする発光ダイオードの製
造方法。1. A silicon carbide whisker C on a single crystal substrate.
The doping gas introduced into the CVD reaction region during the growth by the VD method is switched to form a pn junction in which the conductivity polarity is changed in the growth direction of the silicon carbide whiskers, and the pn junction is formed from the surface of the single crystal substrate. By covering the single crystal substrate with an insulating film having a thickness exceeding the n-junction and etching away the surface layer of the insulating film,
Exposing the end portion of the silicon carbide whisker without exposing the pn junction, aligning the exposed end portion of the silicon carbide whisker to a constant height, and including the exposed portion of the silicon carbide whisker. A method for manufacturing a light-emitting diode, comprising: forming a transparent conductive film to be one ohmic electrode on a surface of an insulating film, and forming a metal film to be another ohmic electrode on the back surface of the single crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5005293A JPH06244457A (en) | 1993-02-16 | 1993-02-16 | Manufacture of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5005293A JPH06244457A (en) | 1993-02-16 | 1993-02-16 | Manufacture of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06244457A true JPH06244457A (en) | 1994-09-02 |
Family
ID=12848230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5005293A Withdrawn JPH06244457A (en) | 1993-02-16 | 1993-02-16 | Manufacture of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06244457A (en) |
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