JPH0625008Y2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Purpose of Invention] (Field of Industrial Application) This invention is a tape automated bonding (T
The present invention relates to a semiconductor device using the AB method).

(Prior Art) In recent years, as electronic devices have become smaller, lighter, and thinner, there has been a demand for thin and high-density mounting of a large number of semiconductor elements, particularly as seen in, for example, memory cards. Conventionally, a mounting method using a TAB method (also referred to as a film carrier method) has been performed as a typical method for mounting semiconductor elements at high density.

As a general TAB process, as shown in FIG. 3, a sprocket hole 1 for automatic bonding by a reel-to-reel system, a device hole 2 for mounting a semiconductor element, and a guide for outer lead cutting. A copper foil is laminated on a base insulating film (polyimide or the like) 4 with an adhesive in which holes 3 and the like are punched, resist coating, exposure and development are performed, and then a copper foil lead (pattern) 5 is formed by an etching method, Then, the resist is peeled off to form the semiconductor mounting tape 6. Next, after inner lead bonding is performed on the bonding pad 8 of the semiconductor element 7 and the copper foil lead formed on the tape 6, resin is potted onto the semiconductor element 7 and sealed.
The semiconductor device 10 is formed by cutting the tape 6 (film 4) from the semiconductor element 7 side while leaving the support link 9 around the device hole 2 formed in the tape 6.

FIG. 4 is an enlarged view of a portion around the inner lead bonding of the semiconductor device 10. As shown in FIG. 4, the support link 9 supports the copper foil lead 5,
The copper foil lead 5 is provided so as to be prevented from being deformed or coming into contact with the periphery of the semiconductor element 7, and to suppress the heat at the time of soldering when the outer lead is connected to the inside of the semiconductor element 7. ing.

However, in this conventional semiconductor device 10, since the support link 9 exists around the semiconductor element 7, the occupied area per semiconductor element becomes large, and especially in the case of a large number of memories, such as a memory card, There is an inconvenience that the mounting density decreases. Further, it is conceivable to narrow the width of the support link 9 in order to make the occupied area per semiconductor element as small as possible.
As the width of the support link 9 becomes narrower, the bonding area of the copper foil lead 5 bonded by the adhesive becomes smaller, the bonding strength with the support link 9 becomes weaker, mechanical external force is applied, and outer lead connection is made. The copper foil leads 5 may be peeled from the support links 9 and may be deformed because the copper foil leads 5 may be easily peeled off due to soldering heat or the like.

(Problems to be Solved by the Invention) As described above, in the conventional semiconductor device using the TAB method, a support is provided around the semiconductor element by providing a width enough to obtain sufficient adhesive strength with the copper foil lead. Since it is necessary to form the links, it is not possible to arrange the semiconductor devices so close to each other, and there is a problem that the packaging density is reduced.

It is an object of the present invention to solve the above problems and provide a semiconductor device capable of increasing the packaging density without impairing reliability.

[Structure of the Invention] (Means for Solving the Problems) In the semiconductor device of the present invention, a semiconductor element is mounted on a device hole formed in a film for tape automated bonding, while the semiconductor device is formed on the film. The copper foil lead and the semiconductor element are connected to each other, the film is cut off while leaving the support link around the device hole, and the copper foil lead extended to the outside by being connected to the semiconductor element is supported by the support link. The thing
The copper foil lead includes an inner lead portion extending from the semiconductor element to one of the support links, an outer lead portion extending from the outside to the other side of the support link in parallel with the inner lead portion, and It is characterized in that it is provided with a connecting portion for connecting an overlapping portion of the inner lead portion and the outer lead portion in a direction orthogonal to the extending direction.

(Operation) In this configuration, since the contact area between the copper foil lead supported and adhered to the support link and the support link can be made large, sufficient adhesive strength can be obtained even if the width of the support link is formed narrow. .

Embodiment An embodiment of the present invention will be described below with reference to the drawings.

1 and 2 relate to an embodiment of the present invention. FIG. 1 is an enlarged plan view showing a part of a semiconductor device formed by cutting a film from the tape shown in FIG. 2, and FIG. It is a top view which shows the tape which mounted the semiconductor element on the film.

In FIG. 2, reference numeral 14 is, for example, a thickness of 75 to 125 μm.
The base film (polyimide, glass epoxy, etc.) with an adhesive having a width of 35 mm or a width of 70 mm is used to punch the sprocket hole 11, the device hole 12 for mounting a semiconductor element, and the guide hole 13 for outer lead cutting. A copper foil lead (pattern) 15 is formed by laminating a copper foil having a thickness of about 35 μm, applying resist, exposing, developing, and etching, and then peeling the resist to form a semiconductor mounting tape 16.
Is created. The copper foil lead 15 located in the support link 17 formed between the device hole 12 of the tape 16 and the guide hole 13 for cutting the outer lead is formed by bending the wiring pattern once, for example, in the perpendicular direction. It is returned to the normal direction again to increase the contact area with the support link. That is, the copper foil lead 15 has an inner lead 15b extending from the semiconductor element 18 onto the support link and an outer lead 15c extending from the outside to the support link, and includes the inner lead 15b and the outer lead 15c. The widthwise direction (vertical direction of the paper surface) is overlapped, and the overlapping portion 21 (mesh line portion) is connected by the connecting portion 15d. That is, the copper foil lead 15 has the bent portion 15 a formed by the overlapping portion 21 and the connecting portion 15 d on the support link 17. Then, the semiconductor element 18 is mounted in the device hole 12 of the tape 16, and the tip of the copper foil lead 15 protruding into the device hole 12 and the bonding pad 19 of the semiconductor element 18 are bonded by a thermocompression bonding method or the like via bumps. Inner lead bonding,
Further, after applying a protective sealing resin (not shown) so as to cover the surface and the side surface of the semiconductor element, the device hole 1
2, leaving the support link 17 around the semiconductor element 18
The semiconductor device 20 is formed by cutting the tape 16 (film 14) from the side.

In this semiconductor device 20, the copper foil lead 15 in the support link 17 is formed with the bent portion 15 a, and the copper foil lead 15
The contact area between the support link 17 and the support link 17 is large. For this reason, the width of the support link 17 is, for example, generally required to be about 1 mm in the past, but is 0.5 mm, which is half the width.
Even if it is formed as narrow as possible, the contact area between the support link 17 and the copper foil lead 15 can be sufficiently obtained, and the required adhesive strength can be obtained. As a result, the copper foil lead 15 does not peel off from the support link 17 even when a mechanical external force is applied, the copper foil lead 15 is prevented from being deformed, and a highly reliable and compact semiconductor device can be obtained. .

[Advantage of Invention] As described above, according to this invention, there is an effect that the size can be reduced without impairing reliability and the packaging density of the semiconductor device can be increased.

[Brief description of drawings]

1 and 2 relate to an embodiment of the present invention. FIG. 1 is an enlarged plan view showing a part of a semiconductor device formed by cutting a film from the tape shown in FIG. 2, and FIG. FIG. 3 is a plan view showing a tape having a semiconductor element mounted on a film, FIGS. 3 and 4 are plan views showing a conventional example. 12 ... Device hole, 14 ... Base film 15 ... Copper foil lead, 15a ... Bending part 16 ... Tape, 17 ... Support link 18 ... Semiconductor element, 20 ... Semiconductor device

Claims (1)

[Scope of utility model registration request] 1. A semiconductor element is mounted on a device hole formed in a film for tape automated bonding, while a copper foil lead formed on the film and the semiconductor element are connected to each other to surround the device hole. While cutting off the film leaving the support link to, to support the copper foil lead extending outward in connection with the semiconductor element, the copper foil lead, from the semiconductor element to the An inner lead portion extending to one of the support links, an outer lead portion extending to the other of the support link from the outside in parallel with the inner lead portion, and the inner lead portion and the outer lead portion. And a connecting portion for connecting overlapping portions in a direction orthogonal to the extending direction. Body device.