JPH06258162A - Bonded structure of glass part - Google Patents

Abstract

PURPOSE:To provide the bonded structure of a glass part, wherein the glass part can be bonded at high adhesion force. CONSTITUTION:A semiconductor pressure sensitive chip 1 is bonded on a glass stage 2. At the lower surface of the glass stage 2, an aluminum layer (Al) layer 9, a titanium (Ti) layer 10, a nickel (Ni) layer 11 and a gold (Au) layer 12 are laminated sequentially by vapor deposition. As the thickness of the layers, the aluminum (Al) layer 9 is 1,000Angstrom thick or less, the titanium (Ti) layer 10 is 3,000+ or -1,000Angstrom thick, the nickel (Ni) layer 11 is 6,000+ or -1,000Angstrom thick and the gold (Au) layer 12 is 800+ or -400Angstrom thick. A gold (Au) layer 15 is plated on the 42 alloy of a metal stem 3. The plating of the gold (Au) layer 15 of the metal stem 3 and the gold (Au) layer 12 are soldered and bonded with Sn-based solder 16.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining structure for glass parts when soldering glass parts and metal parts.

[0002]

2. Description of the Related Art As shown in FIG. 5, a glass pedestal 31 (glass part) is joined under a semiconductor pressure sensor chip 30, and a lower surface of the glass pedestal 31 and a metal stem 32 (metal part) are soldered. Is being done. The metallization of the glass pedestal 31 is performed by sequentially laminating the Ti layer 33, the Ni layer 34,
The Au layer 35 is vapor-deposited. The metallized surface of the glass pedestal 31 has a rough surface to increase the adhesion between the glass and the Ti layer 33 (lap treatment). Metal stem 32
42 alloy is plated with Au layer 36.
It is soldered to the u layer 35.

[0003]

However, the Ti layer 33 in contact with the glass pedestal 31 has a problem in adhesion because it is difficult to sufficiently form an oxide film. That is, there are cases where the adhesion between the Ti layer 33 and the glass surface becomes insufficient due to manufacturing variations, and there is a risk of peeling due to stress propagation when the cap 37 shown in FIG. 5 is welded to the outer peripheral portion of the metal stem 32. .

Therefore, an object of the present invention is to provide a glass part joining structure capable of joining glass parts with high adhesion.

[0005]

The present invention is directed to a glass part in which an aluminum layer, a titanium layer, a nickel layer and a gold layer are sequentially laminated on a glass surface when soldering a glass part and a metal part. The joint structure is the gist.

[0006]

[Function] The aluminum layer is in contact with the glass surface. Here, since aluminum is more likely to form an oxide film than titanium, high adhesion can be obtained.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is embodied in a semiconductor pressure sensor will be described below with reference to the drawings.

FIG. 2 shows a can packaged semiconductor pressure sensor. The semiconductor pressure-sensitive chip 1 is bonded onto the glass pedestal 2, and the coefficient of thermal expansion of the semiconductor pressure-sensitive chip 1 and the coefficient of thermal expansion of the glass pedestal 2 are equal so that the semiconductor pressure-sensitive chip 1 is not subjected to thermal strain. . The semiconductor pressure-sensitive chip 1 has a diaphragm portion (thin wall portion), and a plurality of piezoresistive elements are arranged in this diaphragm portion. And
When the diaphragm portion is deformed by the pressure difference applied to the diaphragm portion, the output value changes due to the piezoresistive effect of the piezoresistive element.

A metal stem 3 as a metal component is joined to the lower surface of the glass pedestal 2. A lapping process is applied to the lower surface of the glass pedestal 2 and a metallization is applied under the lapping process to bond the glass pedestal 2 with sufficient airtightness by soldering. One end of the pressure introducing pipe 4 is joined to the metal stem 3. Further, the lead pin 5 is supported by the metal stem 3 in a penetrating state, and the penetrating portion is hermetically sealed.

The circuit portion of the semiconductor pressure sensitive chip 1 and the lead pin 5 are electrically connected by a bonding wire 6. A metal cap 7 is joined to the outer peripheral portion of the metal stem 3 by vacuum welding or the like so as to cover the semiconductor pressure sensitive chip 1 and the like. The inside of the cap 7 serves as a pressure reference chamber 8. The semiconductor pressure-sensitive chip 1 is produced by the difference between the pressure reference chamber 8 and the pressure introduced through the pressure introducing pipe 4.
The output value changes due to the piezoresistive effect and is taken out by the bonding wire 6 and the lead pin 5.

FIG. 1 shows an enlarged view of the joint between the glass pedestal 2 and the metal stem 3. In FIG. 1, the glass pedestal 2
An aluminum (Al) layer 9, a titanium (Ti) layer 10, a nickel (Ni) layer 11, and a gold (Au) layer 12 are sequentially deposited on the lower surface of the by vapor deposition. The thickness of each layer is aluminum (A
l) The layer 9 is 1000 Å or less, and the titanium (Ti) layer 10 is 3
000 ± 1000Å, nickel (Ni) layer 11 is 600
0 ± 1000Å, gold (Au) layer 12 is 800 ± 400Å
Has become.

The metal stem 3 is made of 42 alloy and gold (A
u) Layer 15 is plated. And the metal stem 3
The gold (Au) layer 15 and the gold (Au) layer 12 are soldered to each other by Sn-based solder 16.

Here, the aluminum (Al) layer 9 is made of aluminum (A).
It is considered that since l) is more likely to form an oxide film than titanium (Ti), high adhesion can be obtained. If the titanium (Ti) layer 10 is omitted and the aluminum (Al) layer 9 and the nickel (Ni) layer 11 are in contact with each other, the aluminum (Al) layer 9 is oxidized by a small amount of O ₂ in the film forming apparatus. It is considered that the adhesion with the nickel (Ni) layer 11 is reduced. Therefore, the titanium (Ti) layer 10 having a better adhesion than the nickel (Ni) layer 11 is used. Nickel (N
i) The layer 11 is for maintaining solderability, and the gold (Au) layer 12 is for preventing oxidation in the process.

FIG. 3 shows data comparing the adhesive strengths of the product of this example and the conventional product. In this experiment, the apparatus shown in FIG. 4 was used. That is, the metal foil 13 is soldered to the one in which the semiconductor pressure sensitive chip 1 and the glass pedestal 2 are joined. still,
At this time, it should be noted that the glass pedestal 2 will crack unless the coefficient of thermal expansion of the metal foil 13 is close to that of glass.

After soldering the metal foil 13, the semiconductor pressure-sensitive chip 1 is fixed to the base 14 and the metal foil 13 is oriented in the direction F shown in the figure.
Record the peak force when pulling. From the data shown in FIG. 3, the glass / metallized interface fracture occurred near 500 gf in the conventional product, while 1 Kgf in the example product.
In the vicinity, the glass / metallized interface did not peel off and the solder was destroyed.

From this, it was proved that the adhesion was improved more than twice as much as before by inserting the aluminum (Al) layer 9. As described above, in this embodiment, the aluminum (Al) layer 9 (100) is provided between the glass surface and the titanium (Ti) layer 10.
(0Å or less) is inserted, so that a metallized structure having high adhesion can be obtained.

The present embodiment is not limited to the above-mentioned embodiment. For example, in the above-mentioned embodiment, the case where the glass surface of the glass pedestal 2 (glass part) is lapped is described. It may be embodied also in the case of joining with.

[0018]

As described above in detail, according to the present invention,
It has the excellent effect of joining glass parts with high adhesion.

[Brief description of drawings]

FIG. 1 is an enlarged view of a joint portion between a glass pedestal and a metal stem.

FIG. 2 is a cross-sectional view showing a semiconductor pressure sensor having a package casing.

FIG. 3 is a measurement diagram showing a measurement result of adhesion force.

FIG. 4 is a side view of an apparatus for measuring adhesion.

FIG. 5 is an enlarged view of a conventional joint portion between a glass pedestal and a metal stem.

[Explanation of symbols]

 2 Glass pedestal as a glass part 3 Metal stem as a metal part 9 Aluminum (Al) layer 10 Titanium (Ti) layer 11 Nickel (Ni) layer 12 Gold (Au) layer

Claims (1)

[Claims] 1. A joining structure for glass parts, wherein an aluminum layer, a titanium layer, a nickel layer, and a gold layer are sequentially laminated on a glass surface when soldering a glass part and a metal part.