JPH06267923A - Cleaning device for semiconductor substrate - Google Patents

Cleaning device for semiconductor substrate

Info

Publication number
JPH06267923A
JPH06267923A JP5593193A JP5593193A JPH06267923A JP H06267923 A JPH06267923 A JP H06267923A JP 5593193 A JP5593193 A JP 5593193A JP 5593193 A JP5593193 A JP 5593193A JP H06267923 A JPH06267923 A JP H06267923A
Authority
JP
Japan
Prior art keywords
cleaning
semiconductor substrate
substrate
bath
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5593193A
Other languages
Japanese (ja)
Inventor
Kazumi Kurooka
和巳 黒岡
Hideki Mizuhara
秀樹 水原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5593193A priority Critical patent/JPH06267923A/en
Publication of JPH06267923A publication Critical patent/JPH06267923A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent a semiconductor substrate from being contaminated on contact with the atmosphere at the time of cleaning. CONSTITUTION:As the depth of a cleaning bath 1 is two times larger than the height of a semiconductor substrate 55, the substrate 55 is first fixed at a position in the upper half of the interior of the bath 1 and a cleaning of the substrate is performed. When this cleaning operation ends, the substrate 55 is sunk at a position in the lower half of the interior of the bath 1 this time and drainage parts 4 and 5 are opened. Whereupon, cleaning water existing in the upper half of the interior of the bath 1 is discharged through the drainage parts 4 and 5 along with dirts on the substrate 55. After that, the parts 4 and 5 are shut and when cleaning water being fed within the bath 1 is brought in such a state that it overflows the upper end of the bath 1, the substrate 55 is again moved upward and the final cleaning of the substrate is performed. Thereby, the substrate 55 can be cleaned two times without coming in touch with the atmosphere.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体基板を洗浄する装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for cleaning a semiconductor substrate.

【0002】[0002]

【従来の技術】半導体装置の製造過程において、半導体
基板を薬液処理した後、純水で洗浄してこの薬液を除去
する工程がある。この純水洗浄の装置は図3の通りであ
る。即ち、洗浄槽51の底部に純水の供給部52、53
が設けられ、純水は、洗浄中、この供給部52、53か
ら供給され、洗浄槽51の上端からオーバーフローして
いる。この洗浄槽51の中に、ホルダー54に保持した
半導体基板55を浸漬する。56は洗浄後に純水を排出
するための排水弁である。
2. Description of the Related Art In the process of manufacturing a semiconductor device, there is a step of treating a semiconductor substrate with a chemical solution and then washing it with pure water to remove the chemical solution. This pure water cleaning device is as shown in FIG. That is, the pure water supplies 52, 53 are provided at the bottom of the cleaning tank 51.
During cleaning, pure water is supplied from the supply units 52 and 53 and overflows from the upper end of the cleaning tank 51. The semiconductor substrate 55 held by the holder 54 is immersed in the cleaning tank 51. Reference numeral 56 is a drain valve for discharging pure water after cleaning.

【0003】洗浄工程は、図4の通り行われる。半導体
基板55を薬液槽57内に浸漬して薬液処理した後、第
1の純水洗浄装置58で洗浄し、その後、水洗効果を上
げるため、更に別の純水洗浄装置59に移して洗浄した
後、乾燥を行う。
The cleaning process is performed as shown in FIG. After the semiconductor substrate 55 is immersed in the chemical solution tank 57 for chemical treatment, it is cleaned by the first deionized water cleaning device 58, and then transferred to another deionized water cleaning device 59 for cleaning in order to improve the water cleaning effect. After that, it is dried.

【0004】[0004]

【発明が解決しようとする課題】従来例にあっては、純
水洗浄装置が複数必要であるので、設備面積が大きくな
る問題がある。また、半導体基板を複数の純水洗浄装置
間で移動させる際に、基板が大気に触れてダストが付着
しやすい上に、最初の純水洗浄装置から基板を引き上げ
た際に水面や水中に浮遊しているダストが基板に付着し
やすい問題がある。
In the conventional example, since a plurality of pure water cleaning devices are required, there is a problem that the equipment area becomes large. Also, when a semiconductor substrate is moved between a plurality of deionized water cleaning devices, the substrate is exposed to the atmosphere and dust is likely to adhere to the substrate. There is a problem that the dust is easily attached to the substrate.

【0005】本発明は、半導体基板の洗浄装置の改良に
関し、斯かる問題点を解消するものである。
The present invention relates to an improvement of a semiconductor substrate cleaning apparatus, and solves such a problem.

【0006】[0006]

【課題を解決するための手段】本発明の半導体基板の処
理装置は、半導体基板を洗浄槽内に収容し、前記洗浄槽
の下部から槽内に洗浄液を供給しつつ上部からオーバー
フローさせながら前記基板を洗浄するものであって、前
記洗浄槽の深さを前記半導体基板の寸法の2倍以上に設
定すると共に洗浄槽の底部から前記半導体基板の寸法よ
りも高い位置に、前記洗浄槽内の洗浄液を排出するため
の開閉自在な排水部を設けたものである。
According to the present invention, there is provided a semiconductor substrate processing apparatus in which a semiconductor substrate is accommodated in a cleaning tank, and a cleaning liquid is supplied into the tank from a lower portion of the cleaning tank while overflowing from the upper portion. Cleaning the depth of the cleaning tank at least twice the size of the semiconductor substrate and at a position higher than the size of the semiconductor substrate from the bottom of the cleaning tank, the cleaning liquid in the cleaning tank. It is provided with a drainage part that can be opened and closed to discharge the water.

【0007】[0007]

【作用】即ち、洗浄槽の深さが半導体基板の2倍以上あ
るので、まず、半導体基板を洗浄槽内の上半分の位置に
固定し、洗浄を行う。この時、洗浄水は、洗浄層の下か
ら上に流れ、洗浄槽の上端からオーバーフローするの
で、半導体基板の汚れが洗浄槽内の下方に沈殿しにくい
状態にある。
That is, since the depth of the cleaning tank is more than twice that of the semiconductor substrate, the semiconductor substrate is first fixed to the upper half position in the cleaning tank and cleaning is performed. At this time, the cleaning water flows from the bottom to the top of the cleaning layer and overflows from the upper end of the cleaning tank, so that dirt on the semiconductor substrate is unlikely to settle down in the cleaning tank.

【0008】この洗浄動作が終了すると、今度は半導体
基板を洗浄槽内の下半分の位置に沈め、排水部を開放す
る。すると、洗浄槽内の上半分にあった洗浄水が半導体
基板の汚れと共に排水部から排出される。その後、排水
部を閉じ、洗浄槽内に供給されている洗浄水が洗浄槽の
上端からオーバーフローするようになると、再び、半導
体基板を上方に移動し、最終洗浄を行う。
When this cleaning operation is completed, the semiconductor substrate is then submerged in the lower half position in the cleaning tank, and the drainage section is opened. Then, the cleaning water in the upper half of the cleaning tank is discharged from the drain together with the dirt on the semiconductor substrate. After that, the drain part is closed, and when the cleaning water supplied into the cleaning tank overflows from the upper end of the cleaning tank, the semiconductor substrate is again moved upward and the final cleaning is performed.

【0009】尚、この最終洗浄は洗浄槽の上端からオー
バーフローさせながら行わなくても、排水部を開放した
ままで、半導体基板の移動も行わず、排水部からオーバ
ーフローさせながら洗浄させてもよく、本発明の洗浄装
置の使用方法は適宜使用者の判断で決定すればよい。
The final cleaning may be performed while overflowing from the upper end of the cleaning tank, without draining the semiconductor substrate and moving the semiconductor substrate without overflowing the upper end of the cleaning tank. The method of using the cleaning apparatus of the present invention may be appropriately determined by the user.

【0010】[0010]

【実施例】本発明の実施例を図面に基づいて説明する。
図1において、1は半導体基板を薬液処理した後に、そ
の薬液を洗い落とすための洗浄槽である。この洗浄槽1
の底部には純水の供給部2、3が設けられ、純水は、洗
浄中、この供給部2、3から供給され、洗浄槽1の上端
からオーバーフローしている。また、この洗浄槽1の深
さは、洗浄される半導体基板55の径の約2.5倍の寸
法を有している。
Embodiments of the present invention will be described with reference to the drawings.
In FIG. 1, reference numeral 1 is a cleaning tank for washing off the chemical solution after the semiconductor substrate is treated with the chemical solution. This cleaning tank 1
Pure water supplies 2 and 3 are provided at the bottom of the cleaning tank 1. Pure water is supplied from the supplies 2 and 3 during cleaning and overflows from the upper end of the cleaning tank 1. The depth of the cleaning tank 1 is about 2.5 times the diameter of the semiconductor substrate 55 to be cleaned.

【0011】4、5は前記洗浄槽1の側壁における1/
2の深さ位置に設けられた排水部であり、夫々排水弁
6、7により開閉することができる。8は洗浄後に純水
を排出するための排水弁である。斯かる構成の洗浄装置
において、洗浄工程は、図2及び図3の通り行われる。
洗浄工程は予備洗浄工程と最終洗浄工程とからなる。
Numerals 4 and 5 are 1 / on the side wall of the cleaning tank 1.
The drainage portion is provided at a depth of 2 and can be opened and closed by drainage valves 6 and 7, respectively. Reference numeral 8 is a drain valve for discharging pure water after cleaning. In the cleaning device having such a configuration, the cleaning process is performed as shown in FIGS.
The cleaning process includes a preliminary cleaning process and a final cleaning process.

【0012】予備洗浄工程では、まず、半導体基板55
を洗浄槽1内の上半分の位置に固定し、洗浄を行う(図
2A)。この時、洗浄水は、洗浄層の下から上に流れ、
洗浄槽の上端からオーバーフローするので、半導体基板
の汚れが洗浄槽内の下方に沈殿しにくい状態にある。こ
の予備洗浄動作が終了すると、今度は半導体基板55を
洗浄槽1内の下半分の位置に沈め、排水部4、5を開放
する(図2B)。すると、洗浄槽1内の上半分にあった
洗浄水が半導体基板の汚れと共に排水部4、5から排出
される(図2C)。
In the preliminary cleaning step, first, the semiconductor substrate 55
Is fixed to the upper half position in the cleaning tank 1 and cleaning is performed (FIG. 2A). At this time, the wash water flows from the bottom to the top of the wash layer,
Since it overflows from the upper end of the cleaning tank, dirt on the semiconductor substrate is unlikely to settle down in the cleaning tank. When this preliminary cleaning operation is completed, the semiconductor substrate 55 is then submerged in the lower half position in the cleaning tank 1, and the drainage parts 4 and 5 are opened (FIG. 2B). Then, the cleaning water in the upper half of the cleaning tank 1 is discharged from the drainage sections 4 and 5 together with the dirt on the semiconductor substrate (FIG. 2C).

【0013】その後、排水部4、5を閉じ、洗浄槽1内
に供給されている洗浄水が洗浄槽1の上端からオーバー
フローするようになると(図3D)、再び、半導体基板
55を上方に移動し、最終洗浄を行う(図3E)。洗浄
を終えると乾燥を行う。以上のように、本実施例の洗浄
装置にあっては、半導体基板を大気に触れさせることな
く、洗浄工程を2度続けて行うことができる。
After that, when the drainage parts 4 and 5 are closed and the cleaning water supplied into the cleaning tank 1 overflows from the upper end of the cleaning tank 1 (FIG. 3D), the semiconductor substrate 55 is moved upward again. And a final wash is performed (Fig. 3E). Drying is performed after cleaning. As described above, in the cleaning apparatus of this embodiment, the cleaning process can be performed twice in succession without exposing the semiconductor substrate to the atmosphere.

【0014】[0014]

【発明の効果】本発明の半導体基板の洗浄装置にあって
は、大気や洗浄水に浮遊しているダストが基板に付着す
ることを防止することができる。しかも、複数回の洗浄
を単槽で行うことができるので、装置の省スペース化を
実現することができる。
In the semiconductor substrate cleaning apparatus of the present invention, dust floating in the atmosphere or cleaning water can be prevented from adhering to the substrate. Moreover, since the cleaning can be performed a plurality of times in a single tank, it is possible to save space in the apparatus.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例における半導体基板の洗浄装置
の内部機構図である。
FIG. 1 is an internal mechanism diagram of a semiconductor substrate cleaning apparatus according to an embodiment of the present invention.

【図2】同じく洗浄プロセスを示す説明図である。FIG. 2 is an explanatory diagram showing a cleaning process of the same.

【図3】同じく洗浄プロセスを示す説明図である。FIG. 3 is an explanatory diagram showing a cleaning process of the same.

【図4】従来例における図1相当図である。FIG. 4 is a view corresponding to FIG. 1 in a conventional example.

【図5】従来例における図2、図3相当図である。FIG. 5 is a view corresponding to FIGS. 2 and 3 in a conventional example.

【符号の説明】[Explanation of symbols]

1 洗浄槽 4、5 排水部 55 半導体基板 1 Cleaning tank 4, 5 Drainage 55 Semiconductor substrate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板を洗浄槽内に収容し、前記洗
浄槽の下部から槽内に洗浄液を供給しつつ上部からオー
バーフローさせながら前記基板を洗浄する装置におい
て、前記洗浄槽の深さを前記半導体基板の寸法の2倍以
上に設定すると共に洗浄槽の底部から前記半導体基板の
寸法よりも高い位置に、前記洗浄槽内の洗浄液を排出す
るための開閉自在な排水部を設けたことを特徴とする半
導体基板の洗浄装置。
1. An apparatus for storing a semiconductor substrate in a cleaning tank and cleaning the substrate while supplying a cleaning liquid into the tank from a lower portion of the cleaning tank and overflowing the cleaning liquid from an upper portion of the cleaning tank. The size of the semiconductor substrate is set to be at least twice the size of the semiconductor substrate, and a drainage part for discharging the cleaning liquid in the cleaning tank is provided at a position higher than the size of the semiconductor substrate from the bottom of the cleaning tank. Cleaning equipment for semiconductor substrates.
JP5593193A 1993-03-16 1993-03-16 Cleaning device for semiconductor substrate Pending JPH06267923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5593193A JPH06267923A (en) 1993-03-16 1993-03-16 Cleaning device for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5593193A JPH06267923A (en) 1993-03-16 1993-03-16 Cleaning device for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPH06267923A true JPH06267923A (en) 1994-09-22

Family

ID=13012832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5593193A Pending JPH06267923A (en) 1993-03-16 1993-03-16 Cleaning device for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPH06267923A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000074111A3 (en) * 1999-05-27 2001-04-26 Lam Res Corp Apparatus and methods for drying batches of wafers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000074111A3 (en) * 1999-05-27 2001-04-26 Lam Res Corp Apparatus and methods for drying batches of wafers
WO2000074116A3 (en) * 1999-05-27 2001-06-14 Oliver Design Inc Apparatus and methods for drying batches of disks
US6430841B1 (en) 1999-05-27 2002-08-13 Lam Research Corporation Apparatus for drying batches of wafers
US6446355B1 (en) 1999-05-27 2002-09-10 Lam Research Corporation Disk drying apparatus and method
US6615510B2 (en) 1999-05-27 2003-09-09 Lam Research Corporation Wafer drying apparatus and method

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