JPH06279984A - Plasma processing device - Google Patents

Abstract

PURPOSE:To provide a plasma processing device by magnetized plasma which produces a high density plasma by generating an electromagnetic wave in a plasma. CONSTITUTION:In the plasma processing device, a treating gas introduced in a vacuum vessel 2 is made to plasma by impressing a magnetic field from a magnetic coil 6 in a center axis derection of the vacuum vessel 2 formed into a cylindrical shape and also impressing a high frequency power in the vacuum vessel 2 from a RF antenna 4 and an object to be treated 10 arranged in the center axis direction in the vacuum vessel 2 is subjected to a plasma processing with the generated plasma. The plasma processing device is provided with a dielectric dome part 3 which is formed approximately half-spherical toward outside the vessel at one end of the vacuum vessel 2 in its center axis direction and the RF antenna 4 formed into one loop is disposed at the close position of the top end outer peripheral part of the dielectric dome part 3. Thus irradiation with plasma excellent in uniformity and directional property is applied.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used in a semiconductor process or the like, and a precision processing such as etching or CVD is performed on an object to be processed such as a semiconductor substrate by ions etc. generated from generated plasma. More specifically, the present invention relates to a plasma processing apparatus using a magnetized plasma that produces high-density plasma by efficiently applying high-frequency energy to the plasma by generating electromagnetic wave motion (abnormal wave) in the plasma.

[0002]

2. Description of the Related Art In recent years, as a result of the demand for high integration in semiconductor manufacturing and economic efficiency, fine processing and a large diameter semiconductor substrate have become necessary. Generation of plasma with high density and uniformity is required. As a means for obtaining high-density plasma generation, it is effective to absorb high-frequency energy having a frequency exceeding the plasma frequency into the plasma, and the characteristics of magnetized plasma that applies a magnetic field to the plasma are used. ECR (electron cyclotron resonance) plasma and helicon wave plasma are known as such magnetized plasma. Although the plasma processing apparatus using ECR plasma is well-established as a high-performance apparatus, it requires a high magnetic field to obtain the ECR conditions, and problems such as control of this high magnetic field and enlargement of the magnetic coil to obtain a large-diameter plasma are required. There is. On the other hand, the plasma processing apparatus using helicon wave plasma is characterized by introducing high-frequency power from an RF antenna into a vacuum container to which a magnetic field is applied to generate plasma, and does not require a high magnetic field like the ECR plasma processing apparatus. ， Can generate plasma under low magnetic field ，
It has attracted attention as a source of large-diameter, high-density plasma required in the above semiconductor process. A conventional example of a plasma processing apparatus using this helicon wave plasma is shown in FIG.
It shows in 0. In FIG. 10, a helicon wave plasma processing apparatus 30 includes a high-frequency power source 3 inside a reaction chamber 31 formed of quartz glass or the like in a cylindrical shape.
An RF antenna 32 for applying the high frequency power from 9 is arranged, and a magnetic coil 33 for applying a magnetic field in the axial direction in the reaction chamber 31 is arranged. The reaction chamber 31 communicates with the process chamber 37, and vacuum exhaust is performed from an exhaust port 35 provided in the process chamber 37, and the reaction chamber 31 and the process chamber 37 form a vacuum container. In addition, a gas introduction port 3 for introducing a processing gas into the process chamber 37.
4 and a mounting table 36 on which the object to be processed 38 is mounted are provided.

In the above structure, the processing gas introduced into the process chamber 37 from the gas introduction port 34 is made into plasma by the magnetic field from the magnetic field coil 33 and the high frequency power from the RF antenna 32, and the magnetic field and the electric field are applied. When the helicon wave generation conditions are met, a helicon wave (a type of anomalous wave) is generated in the plasma, and electrons in the plasma absorb energy from the helicon wave due to Landau decay, and a high-density plasma is generated. Ions and the like generated by the plasma are transported from the reaction chamber 31 to the process chamber 37 along the magnetic field direction, and the object 38 to be processed is efficiently subjected to plasma processing such as etching. The helicon wave plasma device configured as described above generates initial plasma by electric field excitation by electromagnetic induction, and the applied magnetic field excites electromagnetic waves (helicon waves) generated in the plasma. By Landau damping, the energy of the electric field can be effectively given to the electrons in the plasma, and it has the feature that high-density plasma can be generated even in a low magnetic field.

[0004]

However, although the above helicon wave plasma processing apparatus can efficiently obtain high-density plasma, it has the following problems. (1) In order to generate a helicon wave in plasma, a cylindrical process tube (reaction chamber 3) longer than at least a half wavelength (usually 8 to 15 cm) of the helicon wave in the magnetic line direction.
Since 1) is required, it is difficult to downsize the entire device. (2) Since the RF antenna 32 is arranged at the outer peripheral position of the reaction chamber 31, R is generated by the current flowing through the RF antenna 32.
An electric potential is generated in the F antenna 32 with respect to the plasma, electrons are collected in the reaction chamber 31 near the RF antenna 32 and negative charges are accumulated, and as a result, ions are attracted and the reaction chamber wall is sputtered.
The dielectric component of the reaction chamber 31 formed of a dielectric material such as quartz glass is mixed in the plasma. For example, when etching aluminum, if oxygen, which is a component of quartz glass, is mixed in, alumina (Al ₂ O
₃ ) is generated and the strong alumina film hinders the etching process. (3) Since the plasma particles generated in the cylindrical reaction chamber 31 are transported to the process chamber 37, the plasma density is lowered and the directionality of the ions is disturbed due to the divergent magnetic field when a large area plasma treatment is performed. And uniform plasma treatment is difficult. The present invention was devised in view of the problems of the above-mentioned conventional device, and has the above-mentioned problems while utilizing the characteristics of the plasma generation process in which high-density plasma is generated by generating electromagnetic wave motion in plasma. An object of the present invention is to provide a plasma processing apparatus which can be solved.

[0005]

In order to achieve the above object, the means adopted by the present invention is to apply a magnetic field from a magnetic coil in the central axis direction of a vacuum container formed in a cylindrical shape,
A plasma processing apparatus that applies high-frequency power from an RF antenna to the inside of the vacuum container to convert the processing gas introduced into the vacuum container into plasma, and subject the object to be processed placed in the vacuum container to plasma processing by the plasma. In the above-mentioned vacuum container, a dielectric dome portion having a substantially hemispherical shape is provided at one end in the central axis direction of the vacuum container toward the outside of the container, and an RF antenna is formed in one loop outside the tip of the dielectric dome portion. Is provided in the plasma processing apparatus.

[0006]

[Function] In the conventional helicon wave plasma device, the RF antenna that determines the wavelength of the electromagnetic wave generated in the plasma is arranged at the position corresponding to the wavelength of the helicon wave, and the helicon wave is generated by the electromagnetic induction action. As shown in 2, R formed in two loops with the electric field component of the helicon wave spaced apart to match the current component wavelength L of the helicon wave
An F antenna is arranged. The reaction chamber had to be formed in a cylindrical shape because of the necessity of arranging the RF antenna. However, even if the present inventors do not give the RF antenna a loop interval L that determines the wavelength of the helicon wave,
It has been found that electromagnetic waves can be generated in plasma by bringing an RF antenna formed in a loop close to a process tube (reaction chamber) formed of a dielectric material. When the one-loop RF antenna is brought close to the process tube and high-frequency power is applied to the plasma, electromagnetic waves are generated in the plasma in the most stable mode according to the shape of the plasma reaction chamber. Therefore, it is possible to generate plasma in the vacuum container in which the object to be processed is placed, without forming the cylindrical reaction chamber required for generating the helicon wave plasma.

Therefore, according to the present invention, a dielectric dome portion is formed at one end in the central axis direction of the vacuum container so as to project in a substantially hemispherical shape toward the outside of the vacuum container. By arranging an RF antenna formed in one loop to apply high-frequency power to the vacuum container and apply a magnetic field in the central axis direction, plasma is generated on the central axis in the vacuum container. Ions and the like generated from the high-density plasma accompanied by electromagnetic wave motion generated in the vacuum container by the above configuration are transported in the magnetic field direction and irradiated to the object to be processed. Irradiation with excellent plasma property is performed. Further, since the RF antenna can be arranged at a position outside the plasma generation region, sputtering of the dielectric dome portion (corresponding to the reaction chamber of the conventional example) caused by the potential difference between the plasma and the RF antenna is small, and the vacuum container for impurities is small. Incorporation into the interior is reduced.

[0008]

Embodiments of the present invention will be described below with reference to the accompanying drawings for the understanding of the present invention. still,
The following example is an example embodying the present invention and does not limit the technical scope of the present invention. Figure 1
FIG. 2 is a schematic diagram showing the configuration of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 2 compares the 1-loop RF antenna according to the embodiment with a conventional 2-loop RF antenna to see the plasma density and impurities due to ion sputtering. FIG. 3 is a comparative explanatory diagram of an experimental configuration for verifying a difference in mixing, FIG. 3 is a graph showing changes in plasma density measured by the configuration shown in FIG. 2, and FIG. 4 is a graph showing sputtering of the dielectric dome portion measured by the configuration shown in FIG. Fig. 5 is an explanatory diagram showing the reduction effect, and Fig. 5 shows the shape and R
FIG. 6 is a schematic diagram showing the configuration of the plasma processing apparatus according to the second embodiment, and FIG. 7 is a schematic diagram showing the configuration of the plasma processing apparatus according to the second embodiment. FIG. 8 is a schematic diagram showing another embodiment of the RF antenna according to the embodiment, and FIG. 9 is a schematic diagram showing another embodiment of the dielectric dome portion according to the embodiment. . In FIG. 1, a cylindrical vacuum container 2 is configured to be evacuated from an exhaust port 8 to obtain a predetermined vacuum state, and one end of the vacuum container 2 on a central axis 11 is made of quartz glass. A dielectric dome portion 3 formed in a substantially hemispherical shape is attached. A magnetic coil 6 is arranged outside the dielectric dome portion 3 concentrically with the central axis 11, and applies a magnetic field in the central axis direction inside the vacuum container 2. Further, an RF antenna 4 having a loop formed concentrically with the central axis 11 is arranged at an outer position near the tip of the dielectric dome portion 3 (RF in FIG. 1B).
High frequency power from a high frequency power source 5 is applied to the inside of the vacuum chamber 2). Further, a mounting table 9 for mounting the object 10 to be processed is arranged on a central axis 11 in the vacuum container 2, and a gas introduction port 7 for introducing a processing gas into the vacuum container 2 at a predetermined position of the vacuum container 2. Are connected.

In the above structure, when the processing gas is introduced into the vacuum container 2 from the gas introduction port 7 and the magnetic field from the magnetic coil 6 and the high frequency power from the RF antenna 4 are applied, the processing gas is contained in the vacuum container 2. Turns into plasma. Plasma particles such as ions generated by this plasma are transported in the direction of the magnetic force line by the magnetic field and irradiated on the object 10 to be processed placed on the mounting table 9, and a predetermined plasma processing is performed. In a plasma processing apparatus, processing speed and processing accuracy are important points, and it is desired to be able to do this with a smaller apparatus. The processing speed depends on the plasma density, and the helicon wave plasma processing device shown above was useful as a device that can generate high-density plasma under a low magnetic field. As mentioned above, since tubes (reaction chambers) are used, there are problems in terms of processing accuracy and miniaturization. As a device that solves the problems while making the most of the effectiveness of a plasma processing apparatus using an abnormal wave generated in plasma such as this helicon wave plasma processing apparatus, the above-described configuration shown in the present embodiment is used. The significance and effectiveness of the configuration of the above-described embodiment will be described below, while showing experimental results in comparison with the helicon wave plasma processing apparatus having the configuration (FIG. 10).

(1) Abolition of process tube and placement position of RF antenna 4 FIGS. 2 and 3 show the change state of the plasma density depending on the placement position of the RF antenna. It is a comparison between the antenna and the one-loop RF antenna according to the present embodiment. The gas pressure in the process tube 20 is 3 mTorr, the magnetic field strength at the center of the process tube 20 is 300 G (a magnetic coil is not shown), and one RF antenna 21 or 22 with a loop diameter of 150 mm is provided.
The plasma density on the downstream side (right side in the drawing) of the plasma was measured when high frequency power of 3.56 MHz and 1 kW was supplied. In the conventional configuration shown in FIG. 2A, the loop interval P of the two-loop RF antenna 22 determines the wavelength of the helicon wave. Therefore, in order to generate the helicon wave in the process tube 20 at the proper position, the two-loop RF is used. The distance L from the end of the process tube 20 of the antenna 22 is important, and in the above experiment, the plasma density varies significantly with the distance L as shown in FIG. On the other hand, in the case of the one-loop RF antenna 21 according to the configuration of this embodiment shown in FIG. 2B, a high plasma density can be obtained regardless of the installation position. 1 loop RF above
Even if the antenna 21 is disposed away from the process tube 20, high-frequency plasma is generated because high-frequency power is introduced into the process tube 20 at a position close to the end of the process tube 20. However, no plasma is generated at a position away from the process tube 20. In the plasma generation by the one-loop RF antenna as described above, when a predetermined high frequency wave is introduced into the plasma generation region, an electromagnetic wave (abnormal wave) whose wavelength is determined by the plasma itself is generated, and the energy of this electromagnetic wave is generated by the plasma. High-density plasma is generated because it is given to the electrons inside. From the results of the above experiment, in this embodiment, the dielectric dome portion 3 which replaces the process tube as shown in FIG.
Then, the configuration of the one-loop RF antenna 4 arranged in the closest position to this is adopted. With this configuration, the process tube can be almost omitted, and the overall size of the device can be reduced.

(2) Reduction of Impurity Mixing into Vacuum Container Due to RF Antenna Potential In the conventional structure, the inside of the process tube 20 where the RF antenna 22 is disposed is the outer peripheral portion where high density plasma is generated. Therefore, the electrons in the plasma are accelerated by the high-frequency high potential generated in the RF antenna 22,
The process tube under the RF antenna 22 is charged and a DC negative voltage is generated. Ions in the plasma are accelerated toward the RF antenna 22 due to the potential difference between this potential and the plasma, and as a result, the tube wall of the process tube 20 is sputtered by the ions. Since the process tube 20 is usually formed of quartz glass, impurities such as silicon and oxygen in performing plasma processing are released into the vacuum container, which affects the plasma processing. 2 and 4 show that the mixing of impurities into the vacuum container due to the potential generated in the RF antenna 22 can be reduced in the structure of this embodiment.
It will be described based on the experimental results shown in. 2 (a),
In order to observe the state of ion sputtering on the tube wall of the process tube 20 when plasma is generated in the process tube 20 in each state of (b), the oxygen ion emission (4414Å) of the tube wall when the tube wall is sputtered The strength was measured. Argon gas is used as the processing gas, and each RF antenna 2
FIG. 4 shows a graph in which the emission peak intensity is measured when the high frequency power to 1 and 22 is increased. As shown in the figure, in the case of the one-loop RF antenna 21 (b), the oxygen ion emission is less and the degree of sputtering is less than that of the two-loop RF antenna 22 (a). In the present embodiment, the dielectric dome portion 3 which replaces the process tube as shown in FIG. 1 and the RF antenna 4 which is arranged at the tip of the dielectric dome portion 3 are arranged at a close position.
The position of the F antenna 4 deviates from the center of the plasma generation region, the degree to which the dielectric dome portion 3 is sputtered by ions is smaller than that in the above-described experimental configuration, and the mixing of impurities into the vacuum container 2 is reduced.

(3) Uniformization of Plasma Density Distribution and Irradiation Direction to the Object to be Processed FIG. 5 shows the shape of the dielectric dome portion which replaces the conventional process tube (reaction chamber) and the position where the RF antenna is arranged. It shows an experimental result in which the optimum shape of the dielectric dome and the optimum position of the RF antenna were obtained from the change in the plasma density distribution when changed. The plasma density distribution is shown in Fig. 5.
As shown in (a), (b), and (c), 50 from the mounting table 24
The measurement was carried out by moving the measurement probe on a line A orthogonal to the central axis O on the mm plasma side and measuring the electron density distribution (Ne). The measurement graphs are respectively shown below the schematic diagrams. In FIG. 5, dielectric dome portions 25a, 25b, 25c having different shapes are attached to the ends on the central axis O of the vacuum container 23 formed in a cylindrical shape, a magnetic field is applied from the magnetic coil 27, and an RF antenna is applied. The arrangement positions of 26a, 26b, and 26c are changed.
The position of the mounting table 24 arranged in the vacuum container 23 is common to each state.

The state shown in FIG. 5 (a) is a structure close to the conventional structure and the plasma density distribution is not uniform, but one loop RF
Since the generation of electromagnetic waves in the plasma by the antenna does not have to match the wavelength of the waves, disposing the RF antenna 26b at the position shown in FIG. 5B improved the uniformity of the plasma density distribution. Since it is thought that the plasma itself determines a stable mode depending on the shape of the plasma generation position and the position of the RF antenna, the electromagnetic wave has a shape in which the height of the dielectric window 26c is shortened as shown in FIG. 5C. A more uniform plasma density distribution was obtained. At this time, the height of the dielectric window 26c was 100 mm. Figure 5
In the configuration shown in (c), since the transportation distance of the plasma particles becomes short, the directionality of the incidence of the plasma particles on the object to be processed placed on the mounting table 24 is improved, and the accuracy of etching and film formation is improved. Plasma treatment can be performed. The configuration of the present embodiment shown in FIG. 1 is configured based on the experimental results described in the above items (1), (2), and (3), and the helicon wave plasma processing that can obtain high-density plasma under a low magnetic field is performed. In addition to further improving the advantages of the device, we were able to achieve the downsizing of the entire device by achieving the problems of the device, such as the introduction of impurities into the vacuum vessel and the improvement of the plasma density distribution and directionality. .

Next, the structure of the second embodiment will be described in which the structure of the above-described embodiment (FIG. 1) is changed to obtain higher density plasma generation. The elements common to those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted. Figure 6
In the configuration of the second embodiment shown in FIG.
It is placed close to the side. The effect of increasing the plasma density by this configuration will be described based on the actual measurement data shown in FIG. In FIG. 6, the position of the magnetic coil 6 shown by the broken line is the arrangement position in the previous embodiment configuration (FIG. 1), and the position of the magnetic coil 6a shown by the solid line is the arrangement position in this embodiment configuration. FIG. 7 is a graph in which the electron density (Ne) in the plasma on the central axis 11 at the positions where the magnetic coils 6 and 6a of these two examples are arranged is measured. In the measurement graph shown in FIG. 7, the mounting position of the RF antenna 4 is set as a starting point 0 and the mounting table 9 is used.
The electron density on the central axis 11 was measured in the direction. The plasma generation conditions for collecting the measurement data are as follows: Argon gas pressure Ar = 3 mTorr introduced into the vacuum chamber 2, high frequency power 1.2 kW (13.56 M) introduced from the RF antenna 4.
Hz), and the magnetic field strength on the central axis 11 by the magnetic coil 6 or 6a is 260 Gauss. It is confirmed that the electron density in the case where the magnetic coil 6 is disposed at the broken line position has the distribution shown by the dotted line in FIG. 7, and that at the position of the magnetic coil 6a according to the present embodiment shows the distribution shown by the solid line. It was High-density plasma generation is observed even at the position where the magnetic coil 6 is arranged in the configuration of the first embodiment shown by the dotted line, but even higher density plasma is generated at the position where the magnetic coil 6a is arranged in the configuration of this embodiment. Was obtained. The selection of the arrangement position of the magnetic coil 6 or 6a is determined in consideration of the optimum plasma density and density distribution depending on the type of plasma processing, or the influence of magnetism on the object to be processed.

Next, another embodiment of the RF antenna according to the present invention and the dielectric dome portion for introducing the high frequency power from the RF antenna into the vacuum container will be described. First, the embodiment of the RF antenna shown in FIG. 8 is intended to obtain a large-diameter plasma generation in the vacuum container by increasing the radiation area of high-frequency power from the RF antenna into the vacuum container. . In the embodiment shown in FIG. 8 (a), a dielectric dome portion 12 having a conical shape whose top is aligned with the central axis of the vacuum container 2a is attached to the vacuum container 2a,
An RF antenna 4a having a plate surface formed in a one-loop conical shape is arranged along the conical portion of the dielectric dome portion 12. Further, in the embodiment shown in FIG. 8B, similarly, the RF antenna 4b in which conductor loops are arranged in line along the conical portion of the dielectric dome portion 12 is arranged. Such a configuration of the RF antenna 4a or 4b is effective for a production process of a semiconductor integrated circuit that requires plasma processing in the state of a large-diameter wafer in recent years. Also, FIG.
In the embodiment of the dielectric dome shown in Fig. 3, the shape of the plasma generated in the vacuum container is changed, and as a result, the wavelength distribution of the electromagnetic wave (abnormal wave) generated in the plasma is changed, and the density distribution of the plasma is changed. The purpose is to obtain an optimum state corresponding to the purpose of use of plasma processing. In the embodiment shown in FIG. 9A, a concave portion is formed on the side of the vacuum container 2a of the dielectric dome portion 12a having the conical dome portion. In this form, the density distribution of the generated plasma is high in the central portion (concave position). Further, in the embodiment shown in FIG. 9B, a convex portion is formed on the side of the vacuum container 2a of the dielectric dome portion 12b having the conical dome portion. In this form, the generated plasma has a high distribution density in the peripheral part centered on the convex part. By appropriately changing the forms of the RF antenna and the dielectric dome, it is possible to control the state of plasma generation corresponding to the purpose of using plasma processing. As described above, in the plasma processing apparatus according to the present invention, it is possible to adjust the wavelength and velocity distribution of electromagnetic wave gravity induced in the plasma by changing the plasma shape, magnetic field shape, antenna shape, and high frequency output. Indicated. Therefore, each condition can be appropriately changed and optimized according to the state of the applied plasma treatment.

[0016]

As described above, according to the present invention, high-frequency power is applied from the RF antenna formed in one loop to the inside of the vacuum container to generate plasma in the vacuum container and electromagnetic wave motion in the plasma ( Induce an abnormal wave). High-density plasma can be generated by the plasma generation accompanied by the electromagnetic wave motion. Unlike the conventional plasma generation by helicon wave (a kind of abnormal wave), it is not necessary to configure the RF antenna and reaction chamber to match the helicon wave wavelength, so it is possible to generate plasma directly in the vacuum container for plasma processing. It will be possible. Therefore, ions and the like generated from the high-density plasma accompanied by electromagnetic wave motion generated in the vacuum container are transported in the magnetic field direction and irradiated on the object to be processed,
Since the transport distance is short, plasma irradiation with excellent uniformity and directionality is performed. Further, since the RF antenna can be arranged at a position outside the plasma generation region, there is little sputtering of the dielectric window (corresponding to the reaction chamber of the conventional example) caused by the potential difference between the plasma and the RF antenna, and the inside of the impurity vacuum container is reduced. Contamination is reduced.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing the configuration of a plasma processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a comparative explanatory diagram of an experimental configuration for verifying a difference in plasma density and impurity mixing due to ion sputtering by comparing a one-loop RF antenna according to an example and a conventional two-loop RF antenna.

FIG. 3 is a graph showing changes in plasma density measured by the configuration shown in FIG.

FIG. 4 is an explanatory view showing the effect of reducing the sputtering of the dielectric dome portion measured by the configuration shown in FIG.

FIG. 5 is a schematic configuration diagram and a plasma density distribution graph for explaining an experimental result for determining the shape of the dielectric dome portion and the RF antenna installation position.

FIG. 6 is a schematic diagram showing the configuration of a plasma processing apparatus according to a second embodiment of the present invention.

FIG. 7 is a measured data graph showing the effect of increasing the plasma density according to the configuration of the second embodiment in comparison with the configuration of the first embodiment.

FIG. 8 is a schematic diagram showing the configuration of another embodiment of the RF antenna.

FIG. 9 is a schematic diagram showing the configuration of another embodiment of the dielectric dome portion.

FIG. 10 is a schematic diagram showing a configuration of a plasma processing apparatus according to a conventional configuration.

[Explanation of symbols]

1, 15 ... Plasma processing device 2, 2a ... Vacuum container 3, 12, 12a, 12b, 25c ... Dielectric dome portion 4, 4a, 4b, 13a, 13b, 26c ... RF antenna 5 ... High frequency power supply 6, 6a ... Magnetic Coil 7 ... Gas introduction port 8 ... Exhaust port 9 ... Placement table 10 ... Object to be treated 11 ... Central axis

Claims (1)

[Claims] 1. A magnetic field is applied from a magnetic coil in the central axis direction of a vacuum container formed in a tubular shape, and high-frequency power is applied from an RF antenna to the vacuum container, and the vacuum container is introduced into the vacuum container. In a plasma processing apparatus for converting a processing gas into plasma and plasma-processing an object to be processed placed in the vacuum container by the plasma, a substantially hemispherical shape is formed at one end of the vacuum container in the central axis direction toward the outside of the container. A plasma processing apparatus, characterized in that an RF antenna formed in one loop is provided outside the vicinity of the tip of the dielectric dome portion.