JPH06283496A - Dryer of substrate after washing - Google Patents

Dryer of substrate after washing

Info

Publication number
JPH06283496A
JPH06283496A JP9243193A JP9243193A JPH06283496A JP H06283496 A JPH06283496 A JP H06283496A JP 9243193 A JP9243193 A JP 9243193A JP 9243193 A JP9243193 A JP 9243193A JP H06283496 A JPH06283496 A JP H06283496A
Authority
JP
Japan
Prior art keywords
substrate
steam
pure water
cleaning
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9243193A
Other languages
Japanese (ja)
Inventor
Yusuke Muraoka
祐介 村岡
Akira Izumi
昭 泉
Takeshi Matsuka
毅 松家
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP9243193A priority Critical patent/JPH06283496A/en
Publication of JPH06283496A publication Critical patent/JPH06283496A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To reduce running cost, to eliminate the need for the installation of steaming facilities and to avoid the complication of device constitution and the increase of cost by improving thermal efficiency as the whole device in a device, in which a substrate is heated by steam at the time of the drying a substrate after washing. CONSTITUTION:A heat exchange type feedwater heater 58 is interposed in a pure-water feed passage 56 connecting a pure-water supply source and a steam generator 30, and a steam exhaust passage 34 for exhausting steam 26b used for heating a substrate W pulled up from the inside of pure water 18 in a washing tank 12 in a substrate heating section 14 from the substrate heating section is communicated and connected with the heat receiving side condensing section 62 of the heat exchange type feedwater heater.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体デバイス製造
プロセス、液晶表示装置(LCD)製造プロセス、電子
部品関連製造プロセスなどにおいて、シリコンウエハ、
LCD用ガラス基板、電子部品等の各種基板を洗浄した
後にそれらの基板表面を乾燥処理する基板乾燥処理装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon wafer, a semiconductor device manufacturing process, a liquid crystal display (LCD) manufacturing process, a manufacturing process related to electronic parts, etc.
The present invention relates to a substrate drying processing apparatus that cleans various substrates such as glass substrates for LCDs and electronic components and then performs a drying process on the surfaces of these substrates.

【0002】[0002]

【従来の技術】例えば半導体デバイスの製造工程におい
ては、デバイスの動作特性に対して悪影響を与えるよう
な各種汚染、すなわち、シリコンウエハ表面への自然酸
化膜の形成、シリコンウエハ表面への有機物、無機物等
の有害物質やパーティクル等の付着などといった汚染が
起こることが考えられる。特に、近年における半導体デ
バイスの集積度の向上に伴って、金属、有機物、パーテ
ィクル等の汚染物質による影響が益々深刻な問題になっ
てきている。このため、各種の汚染物質を低減させる工
夫、処置が実施されているが、その中心的役割を担って
いるのが基板の洗浄処理である。基板の洗浄処理方法と
しては、硫酸、フッ酸、塩酸、燐酸等の薬液を使用し、
その洗浄用薬液中に基板を浸漬して洗浄するウェット洗
浄法と、フッ酸蒸気やフッ化水素ガスなどの洗浄用気体
を基板に対し供給して洗浄するドライ洗浄法とがある。
ここで、基板をウェット洗浄したとき、或いは、基板を
薬液洗浄又はドライ洗浄した後に、残留薬液、残留イオ
ンなどを基板表面から除去するために、基板を純水中に
浸漬して基板表面をリンス処理したときは、基板表面を
濡れたままにしておくとパーティクルが付着し易く、ま
た、濡れた状態の基板表面を自然乾燥させるとウォータ
ーマーク(水しみ)の発生原因となるため、洗浄用薬液
又は純水中から引き上げられた基板の表面を速やかに乾
燥させる必要がある。この場合、一般に、基板を洗浄処
理して基板表面がクリーン度の高いレベルにあるとき
は、逆に二次的な汚染を受け易くなる。従って、洗浄処
理に引き続いて行なわれる乾燥工程では、高いクリーン
度を維持したままで、基板表面が良好な乾燥状態になる
ように処理することが求められる。
2. Description of the Related Art In a semiconductor device manufacturing process, for example, various kinds of contamination that adversely affects the operating characteristics of the device, that is, formation of a natural oxide film on the surface of a silicon wafer, organic substances and inorganic substances on the surface of a silicon wafer. It is conceivable that contamination such as adhesion of harmful substances such as the above or particles will occur. In particular, as the degree of integration of semiconductor devices has improved in recent years, the influence of contaminants such as metals, organic substances and particles has become an increasingly serious problem. For this reason, various measures and measures have been taken to reduce various pollutants, but the cleaning process of the substrate plays a central role. As a method for cleaning the substrate, a chemical solution such as sulfuric acid, hydrofluoric acid, hydrochloric acid, phosphoric acid is used.
There are a wet cleaning method in which a substrate is immersed in the cleaning chemical solution for cleaning, and a dry cleaning method in which a cleaning gas such as hydrofluoric acid vapor or hydrogen fluoride gas is supplied to the substrate for cleaning.
Here, when the substrate is wet-cleaned, or after the substrate is chemically or dry-cleaned, the substrate is rinsed by immersing it in pure water to remove residual chemicals, residual ions, etc. from the substrate surface. After processing, if the surface of the substrate is left wet, particles tend to adhere, and if the surface of the substrate in a wet state is naturally dried, it may cause water marks (water stains). Alternatively, it is necessary to quickly dry the surface of the substrate pulled up from pure water. In this case, generally, when the substrate is subjected to a cleaning treatment and the surface of the substrate is at a high level of cleanliness, on the contrary, secondary contamination is likely to occur. Therefore, in the drying step that is performed subsequent to the cleaning treatment, it is required to perform treatment so that the substrate surface is in a good dry state while maintaining a high degree of cleanliness.

【0003】薬液洗浄後又はリンス処理後に基板の表面
を乾燥処理する方法の1つとして、特開平4−2519
30号公報には、純水又は洗浄用薬液中に浸漬されてリ
ンス処理又は洗浄処理が施された基板を純水又は洗浄用
薬液中から引き上げる際に、純水もしくは洗浄用薬液中
から引き上げられる途中ないし引き上げられた後の基板
に対し又は純水もしくは洗浄用薬液中から引き上げられ
た直後の基板に対しスチーム(水の高温蒸気)を供給し
て基板の温度を高め、その後にスチームの供給を停止
し、加熱された基板に対し清浄化された乾燥用気体を供
給するなどして基板表面の付着水分を完全に蒸発させる
ようにし、洗浄処理後の基板の表面を速やかに乾燥させ
るとともに、基板表面へのパーティクルの付着や水しみ
等の発生を抑えることができるようにした方法が開示さ
れている。この基板乾燥処理方法について、その方法を
実施するための装置の構成の一部を模式的に示した図4
を参照しながら、より詳しく以下に説明する。
As one of methods for drying the surface of a substrate after cleaning with a chemical solution or after rinsing, there is disclosed in Japanese Patent Laid-Open No. 2519/1992.
In JP-A-30, when a substrate that is immersed in pure water or a cleaning chemical liquid and subjected to a rinse treatment or a cleaning treatment is pulled out from the pure water or cleaning chemical liquid, the substrate is pulled out from the pure water or cleaning chemical liquid. Steam (high-temperature steam of water) is supplied to the substrate midway or after being pulled up, or to the substrate immediately after being pulled out from pure water or cleaning chemicals to raise the temperature of the substrate and then supply steam. Stopping and supplying a cleaned drying gas to the heated substrate to completely evaporate the moisture adhering to the substrate surface, and to quickly dry the surface of the substrate after the cleaning treatment, There is disclosed a method capable of suppressing adhesion of particles to the surface and generation of water stains. FIG. 4 schematically showing a part of the configuration of an apparatus for carrying out this substrate drying treatment method.
Will be described in more detail below with reference to.

【0004】図4に示した基板乾燥処理装置は、ハウジ
ング10内の下部に洗浄槽(純水リンス槽)12が配設さ
れ、その洗浄槽12の上方にそれと隣接して基板加熱部14
が、さらにその基板加熱部14の上方にそれと隣接して基
板乾燥部16がそれぞれ配設され、それら洗浄槽12、基板
加熱部14及び基板乾燥部16が鉛直方向に連続して配置さ
れた構成を有している。洗浄槽12内には図示しない供給
管を通して純水(又は洗浄用薬液)が供給され、洗浄槽
12の上端縁から純水が溢れ出て外部へ流出するように構
成されており、洗浄槽12内に常に清浄な純水18が貯留さ
れるようにしている。この洗浄槽12内に収容された純水
18中に基板を浸漬することにより、リンス処理が行なわ
れる。
In the substrate drying processing apparatus shown in FIG. 4, a cleaning tank (pure water rinsing tank) 12 is disposed in the lower part of the housing 10, and above the cleaning tank 12 and adjacent thereto, a substrate heating unit 14 is provided.
However, a substrate drying unit 16 is disposed above and adjacent to the substrate heating unit 14, and the cleaning tank 12, the substrate heating unit 14, and the substrate drying unit 16 are continuously arranged in the vertical direction. have. Pure water (or cleaning chemicals) is supplied into the cleaning tank 12 through a supply pipe (not shown),
Pure water overflows from the upper edge of 12 and flows out to the outside, so that pure water 18 is always stored in the cleaning tank 12. Pure water stored in this cleaning tank 12
A rinsing process is performed by immersing the substrate in 18.

【0005】基板加熱部14には、上下方向に貫通するよ
うに基板収容室20が形設されており、その基板収容室20
を挾んでその両側に、基板収容室20内へスチーム26aを
水平方向に吹き出し、基板支持器22に保持されて洗浄槽
12内の純水18中から引き上げられた基板Wの表面に対し
スチーム26aを均一に分散させて供給するスチーム供給
部24と、このスチーム供給部24から基板収容室20内へ吹
き出され基板Wの加熱に使用されたスチーム26bを吸引
して排気するスチーム排気部28とが対向するように配設
されている。スチーム供給部24には、スチーム供給路32
を介して純水ボイラーや水素外部燃焼装置等のスチーム
発生器30が連通接続されている。そして、スチーム発生
器30において、純水供給源から供給された純水を加熱し
て蒸発させ、その発生した飽和蒸気を過熱して、そのス
チーム発生器30からスチーム供給部24へスチーム(過熱
蒸気)を送給し、スチーム供給部24から、例えば135
〜150℃程度の温度のスチーム26aを吹き出すように
なっている。また、スチーム排気部28に接続されたスチ
ーム排気路34には、流量調整用のダンパー36が介挿され
ている。さらに、基板収容室20の下部開口部及び上部開
口部には、それぞれ開閉自在のシャッター38、40が配設
されており、基板Wの加熱時に基板収容室20を洗浄槽12
の上方空間及び基板乾燥部16とそれぞれ仕切って基板収
容室20内を密閉し、スチームによる水分(湿気)が基板
乾燥部16へ流入しないようにするとともに、スチーム供
給部24からスチーム排気部32へスチームがスムーズに流
れるようにしている。
A substrate accommodating chamber 20 is formed in the substrate heating section 14 so as to penetrate therethrough in the vertical direction.
The steam 26a is horizontally blown into the substrate housing chamber 20 on both sides of the substrate, and the steam is held by the substrate supporter 22 and washed.
A steam supply unit 24 that uniformly disperses and supplies steam 26a to the surface of the substrate W pulled from the pure water 18 inside the substrate 12, and the steam supply unit 24 blows the steam W into the substrate accommodating chamber 20. The steam exhaust part 28 for sucking and exhausting the steam 26b used for heating is arranged so as to face it. The steam supply section 24 has a steam supply path 32.
A steam generator 30 such as a pure water boiler or a hydrogen external combustion device is connected to and connected via the. Then, in the steam generator 30, the pure water supplied from the pure water supply source is heated to evaporate, the generated saturated steam is superheated, and steam (superheated steam) is supplied from the steam generator 30 to the steam supply unit 24. ) From the steam supply unit 24, for example, 135
The steam 26a having a temperature of about 150 ° C. is blown out. Further, a damper 36 for adjusting the flow rate is inserted in the steam exhaust passage 34 connected to the steam exhaust unit 28. Further, openable and closable shutters 38 and 40 are provided at the lower opening and the upper opening of the substrate storage chamber 20, respectively, and the substrate storage chamber 20 is cleaned when the substrate W is heated.
The upper space of the substrate and the substrate drying unit 16 are individually partitioned to seal the inside of the substrate storage chamber 20 so that moisture (humidity) due to steam does not flow into the substrate drying unit 16 and the steam supply unit 24 to the steam exhaust unit 32. I try to make the steam flow smoothly.

【0006】基板乾燥部16には、HEPAフィルタ42を
通して清浄化された空気44を供給するダウンフロー装置
が配設されている。尚、図4では図示していないが、こ
の装置には、洗浄槽12内に収容された純水18中に浸漬さ
れた基板Wを純水18中から引き上げ、基板加熱部14及び
基板乾燥部16へ順次移動させる基板移動機構が設けられ
ている。この基板移動機構により、基板Wは、洗浄槽12
内から引き上げられ、基板加熱部14へ移動させられ、そ
の基板加熱部14に所定時間停止させられた後、スチーム
による加熱が終わると、基板加熱部14から基板乾燥部16
へ移動させられ、その基板乾燥部16に停止させられて、
乾燥のために所定時間保持される。
The substrate drying section 16 is provided with a downflow device for supplying purified air 44 through the HEPA filter 42. Although not shown in FIG. 4, in this apparatus, the substrate W immersed in the pure water 18 contained in the cleaning tank 12 is pulled out from the pure water 18, and the substrate heating unit 14 and the substrate drying unit are used. A substrate moving mechanism for sequentially moving to 16 is provided. The substrate W is transferred to the cleaning tank 12 by this substrate moving mechanism.
After being pulled up from inside, moved to the substrate heating unit 14, stopped by the substrate heating unit 14 for a predetermined time, when heating by steam is completed, the substrate heating unit 14 to the substrate drying unit 16
Is moved to and stopped by the substrate drying unit 16,
Hold for a period of time to dry.

【0007】また、この基板乾燥処理装置をクリーンル
ーム内などで使用する場合には、スチーム排気路34を蒸
気処理設備46へ導き、スチーム排気部28から排出される
スチームを蒸気処理する必要がある。図4中の48は水
槽、50は給水弁(ボールタップ弁)、52はオーバーフロ
ー管、54はベント(大気連通管)である。
Further, when the substrate drying processing apparatus is used in a clean room or the like, it is necessary to guide the steam exhaust passage 34 to the steam processing facility 46 and steam process the steam discharged from the steam exhaust section 28. In FIG. 4, 48 is a water tank, 50 is a water supply valve (ball tap valve), 52 is an overflow pipe, and 54 is a vent (atmosphere communication pipe).

【0008】図4に示したような基板乾燥処理装置を使
用し、純水18(又は洗浄用薬液)中から引き上げられた
基板Wに対してスチーム26aを供給すると、基板Wの表
面温度が次第に上昇するとともに、基板Wの表面でスチ
ーム26aが冷却されて結露し、基板Wの表面全体が水で
覆われた状態になる。そして、基板Wの表面温度が、ス
チーム26aの温度付近まで上昇し基板W表面上での水分
凝縮が少なくなる程度にまで昇温した時に、基板W表面
へのスチーム26aの供給を停止すると、基板Wの表面は
加熱されて高い温度になっているため、基板Wの表面全
体から付着水分が速やかに蒸発してしまう。このよう
に、基板Wの表面全体が濡れたままの状態で基板Wの温
度を高くし、基板Wの表面温度が高くなった時点で、一
気に付着水分を蒸発させるようにすることにより、基板
W表面にパーティクルが付着したり水しみを形成したり
するようなことが起こらなくなる。
When the substrate drying processing apparatus as shown in FIG. 4 is used and the steam 26a is supplied to the substrate W pulled from the pure water 18 (or cleaning chemical solution), the surface temperature of the substrate W is gradually increased. As the temperature rises, the steam 26a is cooled and condensed on the surface of the substrate W, and the entire surface of the substrate W is covered with water. Then, when the surface temperature of the substrate W rises to the vicinity of the temperature of the steam 26a and rises to such an extent that water condensation on the surface of the substrate W is reduced, when the supply of the steam 26a to the surface of the substrate W is stopped, Since the surface of W is heated to a high temperature, the attached water quickly evaporates from the entire surface of the substrate W. In this way, the temperature of the substrate W is raised while the entire surface of the substrate W remains wet, and when the surface temperature of the substrate W becomes high, the attached water is evaporated at a stroke, so that the substrate W Particles will not adhere to the surface and water stains will not occur.

【0009】[0009]

【発明が解決しようとする課題】図4に示したように従
来の基板乾燥処理装置では、基板Wの加熱に使用された
後のスチーム26bは、スチーム排気部28からスチーム排
気路34を通して排気されるか、スチーム排気路34を通し
て蒸気処理設備46へ送られ、蒸気処理設備46で凝縮され
た後排水されるかしていた。このように、使用済みのス
チームは、そのまま排気されるか凝縮させた後排水され
るかしていたため、スチーム発生器30を含めた基板乾燥
処理装置全体としての熱効率が悪くなり、ランニングコ
ストが高くつく、といった問題点がある。
As shown in FIG. 4, in the conventional substrate drying processing apparatus, the steam 26b after being used for heating the substrate W is exhausted from the steam exhaust unit 28 through the steam exhaust passage 34. Alternatively, it is sent to the steam treatment facility 46 through the steam exhaust passage 34, condensed in the steam treatment facility 46, and then discharged. In this way, since the used steam is either exhausted as it is or condensed and then discharged, the thermal efficiency of the entire substrate drying processing apparatus including the steam generator 30 becomes poor, and the running cost is high. There is a problem such as being attached.

【0010】また、基板乾燥処理装置をクリーンルーム
内で使用する場合などには、排蒸気を処理するための設
備を並設する必要があり、しかも、高温の蒸気を処理す
る必要から、蒸気処理設備は保全室やクリーンルームの
床下などに設置しなければならず、基板乾燥処理装置と
蒸気処理設備とを流路連絡するための配管設備が必要に
なる。このため、システム全体としての装置構成が複雑
化し、また、コスト的にも不利になる、といった問題点
がある。
Further, when the substrate drying apparatus is used in a clean room, it is necessary to install equipment for treating the exhaust steam in parallel, and moreover it is necessary to treat high-temperature steam. Must be installed under the floor of a maintenance room or a clean room, and piping equipment for connecting the substrate drying processing apparatus and the steam processing equipment to the flow path is required. For this reason, there are problems that the device configuration of the entire system becomes complicated and the cost becomes disadvantageous.

【0011】この発明は、以上のような事情に鑑みてな
されたものであり、装置全体としての熱効率を良くして
ランニングコストの低減化を図り、また、蒸気処理設備
の設置を不要にし、装置構成の複雑化及びコスト高を避
けることを目的とする。
The present invention has been made in view of the above circumstances, and improves the thermal efficiency of the apparatus as a whole to reduce the running cost and eliminates the need to install steam treatment equipment, thereby reducing the apparatus cost. The purpose is to avoid complicated structure and high cost.

【0012】[0012]

【課題を解決するための手段】この発明は、純水供給源
とスチーム発生器とを接続する純水供給路に熱交換式給
水加熱器を介挿するとともに、基板加熱部に連通接続さ
れ基板加熱部において基板の加熱に使用されたスチーム
を基板加熱部から排気するためのスチーム排気路を、前
記熱交換式給水加熱器の授熱側凝縮部に連通接続したこ
とを要旨とする。
According to the present invention, a heat exchange type feed water heater is inserted in a pure water supply passage connecting a pure water supply source and a steam generator, and a substrate connected to a substrate heating section is connected. A steam exhaust passage for exhausting steam used for heating a substrate in the heating unit from the substrate heating unit is connected to the heat-condensing side condensing unit of the heat exchange feed water heater.

【0013】[0013]

【作用】上記した構成を有するこの発明に係る基板乾燥
処理装置では、基板移動機構により洗浄槽内の純水又は
洗浄用薬液中から基板が引き上げられ上方の基板加熱部
へ移動させられると、基板加熱部において、基板に対し
スチームが供給されて基板が加熱される。これにより、
基板の表面温度が上昇するとともに、基板の表面でスチ
ームが冷却されて結露し、基板の表面全体が水で覆われ
た状態になる。そして、基板表面上での水分凝縮が少な
くなり基板の表面温度がスチームの温度付近まで上昇し
た時に、基板移動機構により基板加熱部から基板が上方
の基板乾燥部へ移動させられると、基板の表面は加熱さ
れて高い温度になっているため、基板乾燥部において基
板の表面全体から付着水分が速やかに蒸発してしまう。
このように、基板の表面全体が濡れたままの状態で基板
の温度が高くされ、基板の表面温度が高くなった時点で
一気に付着水分が蒸発するので、基板表面にパーティク
ルが付着したり水しみを形成したりするようなことが起
こらず、また、基板表面が静電気を帯びたりすることも
ない。そして、この装置では、基板の加熱に使用された
スチームは、基板加熱部からスチーム排気路を通して熱
交換式給水加熱器の授熱側凝縮部へ送られる。この熱交
換式給水加熱器において、スチームが授熱側凝縮部内で
冷却されて凝縮するとともに、純水供給源から送給され
熱交換式給水加熱器の受熱側給水路内を流れる純水が、
スチームから伝熱壁を通して凝縮熱等の熱を与えられて
加熱される。そして、熱交換式給水加熱器内を通る間に
スチームとの熱交換によって温度が上昇した純水は、熱
交換式給水加熱器から純水供給路を通ってスチーム発生
器へ送給される。従って、スチーム発生器では、スチー
ムを生成するのに必要とする熱量が、熱交換式給水加熱
器において純水が受熱した分だけ少なくて済むことにな
る。一方、熱交換式給水加熱器の授熱側凝縮部において
スチームが凝縮して生成した純水は、ドレンとして排出
される。
In the substrate drying processing apparatus according to the present invention having the above-described structure, when the substrate is pulled up from the pure water or the cleaning chemical solution in the cleaning tank by the substrate moving mechanism and moved to the upper substrate heating section, In the heating unit, steam is supplied to the substrate to heat the substrate. This allows
As the surface temperature of the substrate rises, steam is cooled and condensed on the surface of the substrate, and the entire surface of the substrate is covered with water. Then, when water condensation on the surface of the substrate is reduced and the surface temperature of the substrate rises to near the temperature of steam, the substrate moving mechanism moves the substrate from the substrate heating unit to the upper substrate drying unit. Since the substrate is heated to a high temperature, the attached water is quickly evaporated from the entire surface of the substrate in the substrate drying section.
In this way, the temperature of the substrate is raised while the entire surface of the substrate remains wet, and when the surface temperature of the substrate rises, the attached water evaporates all at once, so particles or water stains adhere to the substrate surface. Does not occur and the surface of the substrate is not charged with static electricity. Then, in this apparatus, the steam used for heating the substrate is sent from the substrate heating unit to the heat-condensing side condensing unit of the heat exchange feed water heater through the steam exhaust passage. In this heat exchange type feed water heater, while steam is cooled and condensed in the heat-condensing side condensing section, the pure water flowing from the pure water supply source and flowing in the heat receiving side water supply passage of the heat exchange type feed water heater,
It is heated by being given heat such as condensation heat from steam through the heat transfer wall. Then, the pure water whose temperature has risen due to heat exchange with the steam while passing through the heat exchange type feed water heater is fed from the heat exchange type feed water heater to the steam generator through the pure water supply passage. Therefore, in the steam generator, the amount of heat required to generate steam can be reduced by the amount of heat received by the pure water in the heat exchange feed water heater. On the other hand, the pure water produced by steam condensation in the heat-condensing side condensing part of the heat exchange feed water heater is discharged as a drain.

【0014】[0014]

【実施例】以下、この発明の好適な実施例について図面
を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.

【0015】図1は、この発明の1実施例を示し、洗浄
処理後の基板の乾燥処理装置の概略構成を模式的に示す
正面図である。この図1において図4で使用した符号と
同一符号を付した部材は、図4に関して説明したものと
同一作用をなす同一部材を指すものとし、それらについ
ては説明を省略する。
FIG. 1 is a front view showing one embodiment of the present invention and schematically showing the construction of a substrate drying processing apparatus after cleaning processing. In FIG. 1, members given the same reference numerals as those used in FIG. 4 indicate the same members having the same operations as those described with reference to FIG. 4, and description thereof will be omitted.

【0016】この基板乾燥処理装置では、純水供給源か
らスチーム発生器30へ純水を送給する純水供給路56に熱
交換式給水加熱器58が介挿されており、給水加熱器58の
受熱側給水路60と純水供給路56とが連通している。一
方、基板加熱部14のスチーム排気部28に接続されたスチ
ーム排気路34が給水加熱器58の授熱側凝縮部62に連通接
続されていて、基板加熱部14において基板Wの加熱に使
用されたスチーム26bが給水加熱器58の授熱側凝縮部62
へ送給されるようになっている。そして、給水加熱器58
の授熱側凝縮部62には、その底部に、ドレントラップ66
が介挿されたドレン管64が連通接続され、その上部に、
逆止弁70が介挿されたベント管68が連通接続されてい
る。この給水加熱器58は、基板乾燥処理装置本体の近く
に設置すればよく、このようにすることにより、スチー
ム排気路34が短くなって配管が容易になりかつコスト上
も有利になる。
In this substrate drying processing apparatus, a heat exchange type feed water heater 58 is inserted in a pure water supply passage 56 for feeding pure water from a pure water supply source to the steam generator 30. The heat receiving side water supply passage 60 and the pure water supply passage 56 communicate with each other. On the other hand, the steam exhaust passage 34 connected to the steam exhaust unit 28 of the substrate heating unit 14 is connected to the heat-condensing side condensation unit 62 of the feed water heater 58 and is used for heating the substrate W in the substrate heating unit 14. The steam 26b is the condenser section 62 on the heating side of the feed water heater 58.
Will be sent to. And the water heater 58
The heat condensing section 62 has a drain trap 66 at its bottom.
The drain pipe 64 in which is inserted is connected and connected, and on top of it,
A vent pipe 68 in which a check valve 70 is inserted is communicatively connected. The feed water heater 58 may be installed near the substrate drying processing apparatus main body, and by doing so, the steam exhaust passage 34 becomes short, piping becomes easy, and cost is also advantageous.

【0017】図2は、給水加熱器の1例を示す縦断面図
である。この給水加熱器58は、大きな外管に多数の小管
を収めたシェル・アンド・チューブ(直管)式熱交換器
であり、多数の小管内が受熱側給水路60となり、その受
熱側給水路60にそれぞれ連通するように給水入口側連接
管72及び給水出口側連接管74が取着されている。一方、
外管内部における小管外の空間が授熱側凝縮部62とな
り、その授熱側凝縮部62にスチーム導入管76を介してス
チーム排気路34が連通するとともに、ドレン排出管78を
介してドレン管64が接続されており、また、授熱側凝縮
部62の上部にベント管68が連通接続されている。尚、必
要に応じて授熱側凝縮部62の内部にバッフルプレート
(邪魔板)を配設するようにしてもよい。また、ドレン
トラップ66は、各種の構成のものがあり、図2ではその
1例を示している。
FIG. 2 is a vertical sectional view showing an example of the feed water heater. This feed water heater 58 is a shell-and-tube (straight pipe) type heat exchanger in which a large number of small tubes are contained in a large outer tube. A water supply inlet side connecting pipe 72 and a water supply outlet side connecting pipe 74 are attached so as to respectively communicate with 60. on the other hand,
The space outside the small pipe inside the outer pipe serves as the heat-condensing side condensing part 62, the steam exhaust passage 34 communicates with the heat-condensing side condensing part 62 via the steam introducing pipe 76, and the drain pipe via the drain discharge pipe 78. 64 is connected, and a vent pipe 68 is communicatively connected to the upper portion of the heat-condensing side condenser section 62. A baffle plate (baffle plate) may be provided inside the heat-condensing side condenser section 62 as necessary. The drain trap 66 has various configurations, and FIG. 2 shows an example thereof.

【0018】図3は、給水加熱器の別の例を示す縦断面
図であり、この熱交換式給水加熱器84は、外管86に1本
の連続したコイルチューブ88を収めた構造を有し、コイ
ルチューブ88内が受熱側給水路となり、外管86内部にお
けるコイルチューブ88外の空間が授熱側凝縮部となる。
尚、給水加熱器としては、各種の構造のものを使用する
ことができ、例えばプレート式熱交換器やラジエータ
(放熱器)などを使用してもよい。
FIG. 3 is a vertical sectional view showing another example of the feed water heater. This heat exchange type feed water heater 84 has a structure in which one continuous coil tube 88 is housed in an outer pipe 86. Then, the inside of the coil tube 88 serves as a heat receiving side water supply passage, and the space inside the outer tube 86 outside the coil tube 88 serves as a heat receiving side condensation section.
As the feed water heater, those having various structures can be used, and for example, a plate heat exchanger or a radiator (radiator) may be used.

【0019】図1及び図2に示した基板乾燥処理装置で
は、基板加熱部14において基板Wの加熱に使用されたス
チーム26bが、基板加熱部14のスチーム排気部28からス
チーム排気路34を通して熱交換式給水加熱器58の授熱側
凝縮部62へ送られる。給水加熱器58においては、スチー
ムが授熱側凝縮部62内で冷却されて凝縮するとともに、
純水供給源から送給され給水加熱器58の受熱側給水路60
内を流れる純水80が、スチームから伝熱壁を通して凝縮
熱等の熱を与えられて加熱される。そして、給水加熱器
58の受熱側給水路60内を通る間に温度が上昇した純水80
は、給水加熱器58から純水供給路56を通ってスチーム発
生器30へ送給される。一方、給水加熱器58の授熱側凝縮
部62においてスチームが凝縮して生成した純水82は、ド
レン管64を通してドレンとして排出され、また、空気等
の非凝縮気体は、授熱側凝縮部62からベント管68を通し
て外部へ排出される。
In the substrate drying processing apparatus shown in FIGS. 1 and 2, the steam 26b used for heating the substrate W in the substrate heating unit 14 is heated from the steam exhaust unit 28 of the substrate heating unit 14 through the steam exhaust passage 34. It is sent to the heat-condensing side condensation section 62 of the exchange-type feed water heater 58. In the feed water heater 58, steam is cooled and condensed in the heat-condensing side condenser unit 62,
Water supply channel 60 on the heat receiving side of the water heater 58 that is supplied from the pure water supply source
Pure water 80 flowing inside is heated by heat such as condensation heat given from steam through a heat transfer wall. And water heater
Pure water whose temperature has risen while passing through the heat receiving side water supply channel 60 of 58
Is sent from the feed water heater 58 to the steam generator 30 through the pure water supply path 56. On the other hand, the pure water 82 generated by steam condensation in the heat-condensation side condensing part 62 of the feed water heater 58 is discharged as a drain through the drain pipe 64, and non-condensed gas such as air is absorbed in the heat-condensing side condensing part 62. It is discharged from 62 through the vent pipe 68 to the outside.

【0020】[0020]

【発明の効果】この発明は以上説明したように構成され
かつ作用するので、この発明に係る基板乾燥処理装置を
使用すれば、スチーム発生器を含めた装置全体としての
熱効率が向上して、ランニングコストが低減化され、ま
た、この基板乾燥処理装置をクリーンルーム内で使用す
る場合などにも、蒸気処理設備を設置する必要が無くな
るため、装置構成の複雑化やコスト高を避けることがで
きる。
Since the present invention is constructed and operates as described above, the use of the substrate drying processing apparatus according to the present invention improves the thermal efficiency of the entire apparatus including the steam generator, and improves the running efficiency. The cost is reduced, and even when the substrate drying processing apparatus is used in a clean room or the like, it is not necessary to install steam processing equipment, so that it is possible to avoid complication of the apparatus configuration and high cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の1実施例に係る、洗浄処理後の基板
の乾燥処理装置の概略構成を模式的に示す正面図であ
る。
FIG. 1 is a front view schematically showing a schematic configuration of a substrate drying processing apparatus after cleaning processing according to an embodiment of the present invention.

【図2】この基板乾燥処理装置で使用される熱交換式給
水加熱器の1例を示す縦断面図である。
FIG. 2 is a vertical cross-sectional view showing an example of a heat exchange type feed water heater used in this substrate drying processing apparatus.

【図3】この基板乾燥処理装置で使用される熱交換式給
水加熱器の別の例を示す縦断面図である。
FIG. 3 is a vertical cross-sectional view showing another example of a heat exchange type feed water heater used in this substrate drying processing apparatus.

【図4】従来の基板乾燥処理装置の構成の1例を示す模
式正面図である。
FIG. 4 is a schematic front view showing an example of the configuration of a conventional substrate drying processing apparatus.

【符号の説明】[Explanation of symbols]

10 ハウジング 12 洗浄槽(純水リンス槽) 14 基板加熱部 16 基板乾燥部 18 純水(洗浄用薬液) 20 基板収容室 22 基板支持器 24 スチーム供給部 26a、26b スチーム 28 スチーム排気部 30 スチーム発生器 32 スチーム供給路 34 スチーム排気路 56 純水供給路 58、84 熱交換式給水加熱器 60 給水加熱器の受熱側給水路 62 給水加熱器の授熱側凝縮部 64 ドレン管 68 ベント管 86 外管 88 コイルチューブ W 基板 10 Housing 12 Cleaning tank (pure water rinse tank) 14 Substrate heating section 16 Substrate drying section 18 Pure water (chemical solution for cleaning) 20 Substrate storage chamber 22 Substrate support 24 Steam supply section 26a, 26b Steam 28 Steam exhaust section 30 Steam generation Heater 32 Steam supply passage 34 Steam exhaust passage 56 Pure water supply passages 58, 84 Heat exchange feed water heater 60 Heat receiving side water supply passage of feed water heater 62 Heat supply side condensing part of feed water heater 64 Drain pipe 68 Vent pipe 86 Outside Tube 88 coil tube W board

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 洗浄槽内に収容された純水又は洗浄用薬
液中に浸漬された基板を純水又は洗浄用薬液中から引き
上げ上方へ移動させる基板移動機構と、 前記洗浄槽の上方にそれと隣接して配設され、純水もし
くは洗浄用薬液中から引き上げられる途中ないし引き上
げられた後の基板に対し又は純水もしくは洗浄用薬液中
から引き上げられた直後の基板に対しスチームを供給し
て基板を加熱する基板加熱部と、 純水供給源に接続され、純水を加熱して生成したスチー
ムを前記基板加熱部へ供給するスチーム発生器と、 前記基板加熱部の上方にそれと隣接して配設され、スチ
ームによって加熱された基板の表面の付着水分を蒸発さ
せる基板乾燥部とを備えてなる、洗浄処理後の基板の乾
燥処理装置において、 純水供給源と前記スチーム発生器とを接続する純水供給
路に熱交換式給水加熱器を介挿するとともに、 前記基板加熱部に連通接続され基板加熱部において基板
の加熱に使用されたスチームを基板加熱部から排気する
ためのスチーム排気路を、前記熱交換式給水加熱器の授
熱側凝縮部に連通接続したことを特徴とする、洗浄処理
後の基板の乾燥処理装置。
1. A substrate moving mechanism for lifting a substrate immersed in pure water or a cleaning chemical solution contained in the cleaning tank from the pure water or the cleaning chemical solution and moving it upward, and a substrate moving mechanism above the cleaning tank. Substrates are provided adjacent to each other by supplying steam to the substrate during or after being pulled out from pure water or the cleaning chemical solution or to the substrate immediately after being pulled out from the pure water or cleaning chemical solution. And a steam generator connected to a pure water supply source for supplying steam generated by heating pure water to the substrate heating unit, and a steam generator disposed above and adjacent to the substrate heating unit. A substrate drying unit after the cleaning process, which is provided with a substrate drying unit for evaporating moisture adhering to the surface of the substrate heated by steam, wherein a pure water supply source and the steam generator are provided. A steam exhaust for exhausting the steam used for heating the substrate in the substrate heating section, which is connected to the pure water supply path to which a heat exchange type feed water heater is inserted, and which is connected to the substrate heating section in communication. A drying treatment apparatus for a substrate after cleaning treatment, characterized in that the passage is connected to the heat-condensing side condensing portion of the heat exchange type feed water heater.
JP9243193A 1993-03-26 1993-03-26 Dryer of substrate after washing Pending JPH06283496A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9243193A JPH06283496A (en) 1993-03-26 1993-03-26 Dryer of substrate after washing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9243193A JPH06283496A (en) 1993-03-26 1993-03-26 Dryer of substrate after washing

Publications (1)

Publication Number Publication Date
JPH06283496A true JPH06283496A (en) 1994-10-07

Family

ID=14054255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9243193A Pending JPH06283496A (en) 1993-03-26 1993-03-26 Dryer of substrate after washing

Country Status (1)

Country Link
JP (1) JPH06283496A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319329B1 (en) 1997-01-24 2001-11-20 Tokyo Electron Limited Method of cleaning objects to be processed
US6375758B2 (en) 1997-06-17 2002-04-23 Tokyo Electron Limited Cleaning and drying method and apparatus for objects to be processed
US6413355B1 (en) 1996-09-27 2002-07-02 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US6575178B1 (en) 1997-07-17 2003-06-10 Tokyo Electron Limited Cleaning and drying method and apparatus
KR20190050712A (en) * 2017-11-03 2019-05-13 어플라이드 머티어리얼스, 인코포레이티드 Annealing system and method
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10854483B2 (en) 2017-11-16 2020-12-01 Applied Materials, Inc. High pressure steam anneal processing apparatus
US10957533B2 (en) 2018-10-30 2021-03-23 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
US10998200B2 (en) 2018-03-09 2021-05-04 Applied Materials, Inc. High pressure annealing process for metal containing materials
US11018032B2 (en) 2017-08-18 2021-05-25 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US11227797B2 (en) 2018-11-16 2022-01-18 Applied Materials, Inc. Film deposition using enhanced diffusion process
US11462417B2 (en) 2017-08-18 2022-10-04 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11527421B2 (en) 2017-11-11 2022-12-13 Micromaterials, LLC Gas delivery system for high pressure processing chamber
US11581183B2 (en) 2018-05-08 2023-02-14 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US11610773B2 (en) 2017-11-17 2023-03-21 Applied Materials, Inc. Condenser system for high pressure processing system
US11705337B2 (en) 2017-05-25 2023-07-18 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US11749555B2 (en) 2018-12-07 2023-09-05 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US12198951B2 (en) 2017-03-10 2025-01-14 Applied Materials, Inc. High pressure wafer processing systems and related methods

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413355B1 (en) 1996-09-27 2002-07-02 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
US6319329B1 (en) 1997-01-24 2001-11-20 Tokyo Electron Limited Method of cleaning objects to be processed
US6491045B2 (en) 1997-01-24 2002-12-10 Tokyo Electron Limited Apparatus for and method of cleaning object to be processed
US6375758B2 (en) 1997-06-17 2002-04-23 Tokyo Electron Limited Cleaning and drying method and apparatus for objects to be processed
US6575178B1 (en) 1997-07-17 2003-06-10 Tokyo Electron Limited Cleaning and drying method and apparatus
US12198951B2 (en) 2017-03-10 2025-01-14 Applied Materials, Inc. High pressure wafer processing systems and related methods
US11705337B2 (en) 2017-05-25 2023-07-18 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US12593627B2 (en) 2017-05-25 2026-03-31 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US11694912B2 (en) 2017-08-18 2023-07-04 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11018032B2 (en) 2017-08-18 2021-05-25 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11462417B2 (en) 2017-08-18 2022-10-04 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11469113B2 (en) 2017-08-18 2022-10-11 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
KR20200135928A (en) * 2017-11-03 2020-12-04 어플라이드 머티어리얼스, 인코포레이티드 Annealing system and method
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
KR20190050712A (en) * 2017-11-03 2019-05-13 어플라이드 머티어리얼스, 인코포레이티드 Annealing system and method
US11756803B2 (en) 2017-11-11 2023-09-12 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
US11527421B2 (en) 2017-11-11 2022-12-13 Micromaterials, LLC Gas delivery system for high pressure processing chamber
US10854483B2 (en) 2017-11-16 2020-12-01 Applied Materials, Inc. High pressure steam anneal processing apparatus
US11610773B2 (en) 2017-11-17 2023-03-21 Applied Materials, Inc. Condenser system for high pressure processing system
US10998200B2 (en) 2018-03-09 2021-05-04 Applied Materials, Inc. High pressure annealing process for metal containing materials
US11881411B2 (en) 2018-03-09 2024-01-23 Applied Materials, Inc. High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US11581183B2 (en) 2018-05-08 2023-02-14 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US11361978B2 (en) 2018-07-25 2022-06-14 Applied Materials, Inc. Gas delivery module
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10957533B2 (en) 2018-10-30 2021-03-23 Applied Materials, Inc. Methods for etching a structure for semiconductor applications
US11227797B2 (en) 2018-11-16 2022-01-18 Applied Materials, Inc. Film deposition using enhanced diffusion process
US11749555B2 (en) 2018-12-07 2023-09-05 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Similar Documents

Publication Publication Date Title
JPH06283496A (en) Dryer of substrate after washing
EP0782889B1 (en) Method and apparatus for washing or for washing-drying substrates
JP3110218B2 (en) Semiconductor cleaning apparatus and method, wafer cassette, dedicated glove, and wafer receiving jig
KR100804911B1 (en) Substrate Processing Equipment
JP3715052B2 (en) Wafer dryer
JP2001176833A (en) Substrate processing equipment
JP2003297795A (en) Semiconductor wafer cleaning / drying apparatus and cleaning / drying method
US6579370B2 (en) Apparatus and method for coating treatment
KR102598124B1 (en) Apparatus for cleaning substrate
JPH06283497A (en) Dyer of substrate after washing
JP3782314B2 (en) Application processing equipment
JP2001271188A (en) Substrate treatment apparatus
KR20100047584A (en) Apparatus of processing substrates for removing fume
JP3545531B2 (en) Processing device and processing method
KR20010068648A (en) A wafer cleaner
JP4421967B2 (en) Substrate processing apparatus and substrate processing method
JPH06283495A (en) Steam generator for substrate drier after washing
KR100862704B1 (en) Waste liquid treatment device and method
JPH10125649A (en) Steam generating device and method for discharging treatment liquid from the device
KR20090058773A (en) Substrate processing equipment
JP3298037B2 (en) Drying processing equipment
KR200148632Y1 (en) Chemical Bath with Wet Cleaner
JP2588524Y2 (en) Substrate pure water pulling and drying equipment
JP2004119591A (en) Substrate processing equipment
JP2555086B2 (en) Surface treatment equipment