JPH06295478A - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPH06295478A
JPH06295478A JP7995493A JP7995493A JPH06295478A JP H06295478 A JPH06295478 A JP H06295478A JP 7995493 A JP7995493 A JP 7995493A JP 7995493 A JP7995493 A JP 7995493A JP H06295478 A JPH06295478 A JP H06295478A
Authority
JP
Japan
Prior art keywords
recording
film
recording film
magneto
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7995493A
Other languages
Japanese (ja)
Other versions
JP2624114B2 (en
Inventor
Masatsugu Ogawa
雅嗣 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP5079954A priority Critical patent/JP2624114B2/en
Publication of JPH06295478A publication Critical patent/JPH06295478A/en
Application granted granted Critical
Publication of JP2624114B2 publication Critical patent/JP2624114B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide the large-capacity magneto-optical recording medium. CONSTITUTION:This magneto-optical recording medium consists of >=2 layers of recording films and has a process of transferring the magnetization state of the recording film 2 nearer the light irradiation side next to the recording film 1 to the recording film nearest the light irradiation side at the time of forming recording marks. The boundary magnetic wall energy, effective perpendicularly anisotropic magnetic fields, film thickness, etc., of both layers are controlled at this time, by which the magnetization from the recording film 2 to the recording film 1 is effectively transferred. As a result, the recording film 1 having a large Curie temp., large coercive force, etc., are made usable. The magneto-optical recording medium of high reproduced output is obtd. The recording film having recording characteristics of the recording film 2 is produced. The recording characteristics are changed by changing the recording film 2 even if the recording film 1 is not changed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光磁気記録用媒体、特
に高密度記録に適する光磁気記録用媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical recording medium, and more particularly to a magneto-optical recording medium suitable for high density recording.

【0002】[0002]

【従来の技術】従来の光磁気記録用媒体において、高い
キュリー温度と大きなカー回転角を有する再生用の垂直
磁化膜(読みだし層)と低いキュリー温度と相対的に小
さなカー回転角を有する垂直磁化膜(記録層)を交換結
合させ、再生信号強度の増加と記録パワーに関して高感
度化を計った高感度2層膜と称される媒体が存在する。
このような媒体は特開昭62−184644号公報、特
開昭63−16444号公報、特開昭63−18544
号公報、特開昭63−18545号公報など数多く示さ
れているが、これらの媒体における記録マーク形成は、
記録層のキュリー温度付近において、読みだし層が磁化
反転し始め、温度が下がる過程で読みだし層の磁化が記
録層に転写されるという形をとる。室温では、記録層の
保磁力が高いため、記録マークは固定され、安定に存在
できる。この高感度2層膜が持つ従来の単層膜媒体と違
う特性としては、読みだし層の保磁力が小さいことに起
因する高記録磁界感度などがあげられる。
2. Description of the Related Art In a conventional magneto-optical recording medium, a reproducing perpendicularly magnetized film (reading layer) having a high Curie temperature and a large Kerr rotation angle and a perpendicular magnetic film having a low Curie temperature and a relatively small Kerr rotation angle. There is a medium referred to as a high-sensitivity two-layer film in which the magnetization film (recording layer) is exchange-coupled to increase the reproduction signal intensity and increase the recording power.
Such media are disclosed in JP-A-62-184644, JP-A-63-16444 and JP-A-63-18544.
Japanese Patent Laid-Open No. 63-18545 and Japanese Patent Laid-Open No. 63-18545 disclose many recording marks in these media.
In the vicinity of the Curie temperature of the recording layer, the magnetization of the reading layer starts to reverse, and the magnetization of the reading layer is transferred to the recording layer in the process of lowering the temperature. At room temperature, since the coercive force of the recording layer is high, the recording mark is fixed and can exist stably. A characteristic of this high-sensitivity two-layer film different from the conventional single-layer film medium is high recording magnetic field sensitivity due to the small coercive force of the reading layer.

【0003】[0003]

【発明が解決しようとする課題】従来の高感度2層膜で
は、記録マークの形成を、読みだし層の反転に頼るた
め、記録層のキュリー温度付近において、読みだし層の
保磁力を充分に小さくしなければならず、読みだし層に
は、あまり保磁力の大きな記録膜やキュリー温度が高す
ぎる記録膜を使用することができなかった。また、記録
特性(記録磁界依存性など)が読みだし層に支配され、
記録特性の変更が容易ではなかった。光の照射側に最も
近い記録膜に、その記録膜よりも光の照射側から遠い記
録膜の記録特性を反映させようとする試みは、特開平4
−184734号公報などに示されているが、記録膜が
少なくとも3層以上必要となり、光の照射側から偶数番
目の記録膜には、キュリー温度を低くして両側の記録膜
の交換相互作用を切ったりつないだりするスイッチの役
割を持たせなければならなかった。
In the conventional high-sensitivity two-layer film, since the formation of the recording mark depends on the reversal of the reading layer, the coercive force of the reading layer is sufficient near the Curie temperature of the recording layer. It must be made small, and it was not possible to use a recording film having a large coercive force or a recording film having a too high Curie temperature for the reading layer. Also, the recording characteristics (such as recording magnetic field dependence) are dominated by the read layer,
It was not easy to change the recording characteristics. An attempt to reflect the recording characteristics of a recording film farther from the light irradiation side than the recording film on the recording film closest to the light irradiation side is disclosed in Japanese Patent Laid-Open Publication No. Hei 4 (1999) -43.
As disclosed in Japanese Patent Publication No. 184734, etc., at least three recording films are required, and the Curie temperature is lowered for even-numbered recording films from the light irradiation side so that the exchange interaction between the recording films on both sides is caused. I had to have the role of a switch that cuts and connects.

【0004】本発明の目的は、このような問題を解決
し、大容量の光磁気記録用媒体を提供することにある。
An object of the present invention is to solve such problems and provide a large capacity magneto-optical recording medium.

【0005】[0005]

【課題を解決するための手段】本発明の光磁気記録用媒
体は、2層以上の記録膜を有し、記録マークを形成する
際、光の照射側に最も近い第1の記録膜に、第1の記録
膜の次に光の照射側に近い第2の記録膜の磁化状態を転
写する過程を有することを特徴とする。
A magneto-optical recording medium according to the present invention has a recording film having two or more layers, and when a recording mark is formed, the first recording film closest to the light irradiation side is It is characterized in that it has a process of transferring the magnetization state of the second recording film next to the light irradiation side next to the first recording film.

【0006】また、本発明の光磁気記録用媒体は、前記
第1の記録膜と前記第2の記録膜とを少なくとも有し、
前記第2の記録膜のキュリー温度から室温の温度領域
で、前記第2の記録膜の界面磁壁エネルギー密度が前記
第1の記録膜の界面磁壁エネルギー密度よりも大きくな
る温度領域が存在することを特徴とする。
The magneto-optical recording medium of the present invention has at least the first recording film and the second recording film,
There is a temperature region in which the interface domain wall energy density of the second recording film is higher than the interface domain wall energy density of the first recording film in a temperature region from the Curie temperature of the second recording film to room temperature. Characterize.

【0007】また、本発明の光磁気記録用媒体は、前記
第1の記録膜と前記第2の記録膜とを少なくとも有し、
前記第2の記録膜のキュリー温度から室温の温度領域
で、前記第1の記録膜と前記第2の記録膜の界面にでき
る界面磁壁の厚さが前記第1の記録膜の膜厚よりも大き
いことを特徴とする。
Further, the magneto-optical recording medium of the present invention has at least the first recording film and the second recording film,
In the temperature region from the Curie temperature to the room temperature of the second recording film, the thickness of the interface domain wall formed at the interface between the first recording film and the second recording film is larger than that of the first recording film. Characterized by being large.

【0008】また、本発明の光磁気記録媒体は、前記第
1の記録膜と、前記第2の記録膜と、前記第2の記録膜
のキュリー温度付近で有効垂直異方性磁界(Hk−4π
Ms)または保磁力が小さい第3の記録膜とを少なくと
も有し、前記第2の記録膜のキュリー温度から室温の温
度領域で、前記第2の記録膜の界面磁壁エネルギー密度
が前記第1の記録膜の界面磁壁エネルギー密度よりも大
きくなる温度領域が存在し、前記第2の記録膜のキュリ
ー温度付近で、前記第3の記録膜の有効異方性磁界(H
k−4πMs)または保磁力が記録バイアス磁界以下に
なることを特徴とする。
Further, in the magneto-optical recording medium of the present invention, an effective perpendicular anisotropy magnetic field (Hk−) is generated near the Curie temperatures of the first recording film, the second recording film and the second recording film. 4π
Ms) or a third recording film having a small coercive force, and the interface domain wall energy density of the second recording film is in the temperature range from the Curie temperature of the second recording film to room temperature. There is a temperature region that is higher than the interface domain wall energy density of the recording film, and near the Curie temperature of the second recording film, the effective anisotropic magnetic field (H
k-4πMs) or coercive force is less than or equal to the recording bias magnetic field.

【0009】また、本発明の光磁気記録媒体は、前記第
1の記録膜と、前記第2の記録膜と、前記第3の記録膜
とを少なくとも有し、前記第2の記録膜のキュリー温度
から室温の温度領域で、前記第1の記録膜と前記第2の
記録膜の界面にできる界面磁壁の厚さが前記第1の記録
膜の膜厚よりも大きく、前記第2の記録膜のキュリー温
度付近で、前記第3の記録膜の有効異方性磁界(Hk−
4πMs)または保磁力が記録バイアス磁界以下になる
ことを特徴とする。
Further, the magneto-optical recording medium of the present invention has at least the first recording film, the second recording film and the third recording film, and the Curie of the second recording film. In the temperature range from temperature to room temperature, the thickness of the interface domain wall formed at the interface between the first recording film and the second recording film is larger than the film thickness of the first recording film, and the second recording film Near the Curie temperature of the third recording film, the effective anisotropic magnetic field (Hk-
4πMs) or the coercive force is less than or equal to the recording bias magnetic field.

【0010】なお、本発明の光磁気記録媒体は、前記第
2の記録膜のキュリー温度付近で、前記第1の記録膜の
有効垂直異方性磁界(Hk−4πMs)または保磁力が
記録バイアス磁界以上になっていてもよい。
In the magneto-optical recording medium of the present invention, near the Curie temperature of the second recording film, the effective perpendicular anisotropic magnetic field (Hk-4πMs) or coercive force of the first recording film causes the recording bias. It may be higher than the magnetic field.

【0011】[0011]

【作用】第2の記録膜の磁化状態を第1の記録膜に転写
することにより、第2の記録膜の記録特性(記録磁界依
存性など)も有する記録膜を作製することができる。こ
れにより、第1の記録膜を変えなくても第2の記録膜を
変えることによって、記録特性を容易に変更できる。
By transferring the magnetization state of the second recording film to the first recording film, a recording film having the recording characteristics (recording magnetic field dependency, etc.) of the second recording film can be manufactured. Thus, the recording characteristics can be easily changed by changing the second recording film without changing the first recording film.

【0012】交換結合力を利用した光磁気記録用媒体に
おいて、記録マーク形成時に生じる記録膜の界面の界面
磁壁は、界面磁界エネルギー密度の小さな記録膜のほう
に動き、界面磁壁エネルギー密度の小さい記録膜をパン
チスルーする。また、界面磁壁エネルギー密度の大小に
拘らず、記録膜に生じるはずの界面磁壁の厚さよりも記
録膜を薄くすると、界面磁壁はその記録膜をパンチスル
ーする。これは、ある記録膜の状態を他の記録膜(界面
磁壁をパンチスルーされる膜)に転写するということと
等価である。
In the magneto-optical recording medium utilizing the exchange coupling force, the interface magnetic wall at the interface of the recording film generated at the time of forming the recording mark moves toward the recording film having the small interface magnetic field energy density, and recording having the small interface magnetic wall energy density. Punch through the membrane. If the recording film is made thinner than the thickness of the interface domain wall that should occur in the recording film, the interface domain wall punches through the recording film regardless of the energy density of the interface domain wall. This is equivalent to transferring the state of a certain recording film to another recording film (a film in which the interface domain wall is punched through).

【0013】従来の交換結合力を利用した光磁気記録用
媒体において、読みだし層に保磁力の大きいものまたは
キュリー温度が高いものを用いた場合、記録層には記録
マークが形成されているが、読みだし層には、良好に記
録マークが形成されていないことがよくある。この場
合、再生信号は読みだし層から得るために、期待される
再生出力を得ることができない。
In a conventional magneto-optical recording medium utilizing exchange coupling force, when a reading layer having a large coercive force or a high Curie temperature is used, recording marks are formed on the recording layer. In many cases, recording marks are not formed well on the read layer. In this case, since the reproduction signal is obtained from the reading layer, the expected reproduction output cannot be obtained.

【0014】そこで、先に述べた2つの原理を利用し
て、界面磁壁が第1記録膜にパンチスルーするようにし
て、良好に形成された第2記録膜の記録マークを第1記
録膜に転写してやれば、第1記録膜に保磁力の大きなも
のまたはキュリー温度の高いものを用いた場合でも、第
1記録膜に良好な記録マークが形成され、期待する再生
出力を得ることができる。
Therefore, by utilizing the above-mentioned two principles, the interface domain wall punches through the first recording film, and the recording mark of the second recording film which is well formed is formed on the first recording film. When transferred, good recording marks can be formed on the first recording film even when a material having a large coercive force or a material having a high Curie temperature is used for the first recording film, and an expected reproduction output can be obtained.

【0015】一方、このように第1記録膜に保磁力の大
きなものまたはキュリー温度の高いものを用いた場合、
従来の高感度2層膜が示した第1記録膜の保磁力が小さ
いことによる特性(高記録磁界感度など)が弱まってし
まう。そこで、第2記録膜のうえに保磁力の弱い第3記
録膜をつけ、第2記録膜の記録マーク形成を助けてやれ
ば、従来の高感度2層膜の特徴を持ち、さらに高再生出
力の媒体を作製することができる。この場合、記録マー
クの形成は以下のような過程で起こる。まず、第2記録
膜のキュリー温度付近において、第3記録膜が磁化反転
を起こし、それとともに第2記録膜の磁化を反転させ
る。その後、降温過程で、第2記録膜に形成された記録
マークを第1記録膜に転写することによって、記録マー
クの書き込みを終了する。
On the other hand, when the first recording film having a large coercive force or a high Curie temperature is used,
The characteristics (such as high recording magnetic field sensitivity) due to the small coercive force of the first recording film, which is exhibited by the conventional high-sensitivity two-layer film, are weakened. Therefore, if a third recording film having a weak coercive force is provided on the second recording film to assist the formation of the recording mark of the second recording film, it has the characteristics of the conventional high-sensitivity two-layer film and has a higher reproduction output. Can be produced. In this case, the recording mark is formed in the following process. First, in the vicinity of the Curie temperature of the second recording film, the third recording film causes the magnetization reversal, and at the same time, the magnetization of the second recording film is reversed. Then, in the temperature decreasing process, the recording mark formed on the second recording film is transferred to the first recording film, thereby completing the writing of the recording mark.

【0016】第2記録膜のキュリー温度付近で、第1記
録膜の有効垂直異方性磁界または保磁力がバイアス磁界
よりも大きく、第1記録膜に全く記録マークが形成され
なくても、界面磁壁を第2記録膜から第1記録膜にパン
チスルーするようにしてやれば降温過程で第2記録膜の
記録マークが第1記録膜に転写され、期待する再生出力
を得ることができる。
In the vicinity of the Curie temperature of the second recording film, the effective perpendicular anisotropic magnetic field or coercive force of the first recording film is larger than the bias magnetic field, and even if no recording mark is formed on the first recording film, an interface is formed. If the domain wall is punched through from the second recording film to the first recording film, the recording mark of the second recording film is transferred to the first recording film during the temperature decrease process, and the expected reproduction output can be obtained.

【0017】[0017]

【実施例】本発明の2層膜を用いたディスクの構成を図
1に示す。このディスクは、基板3に干渉膜4、記録膜
1、記録膜2、保護膜5を順次成膜することによって得
られる。
EXAMPLE FIG. 1 shows the structure of a disk using the two-layer film of the present invention. This disc is obtained by sequentially forming an interference film 4, a recording film 1, a recording film 2, and a protective film 5 on a substrate 3.

【0018】一例として、基板3として、直径130m
m、トラックピッチ1.6μmのポリカーボネイト基板
を用い、その基板3に、干渉膜4として窒化シリコン膜
を80nm、記録膜1としてGdTbFeCo膜を30
nm、記録膜2としてTbFeCo膜を100nm、保
護膜5として窒化シリコン膜を80nm順次成膜した。
As an example, the substrate 3 has a diameter of 130 m.
m, a polycarbonate substrate having a track pitch of 1.6 μm is used. On the substrate 3, a silicon nitride film having a thickness of 80 nm is used as the interference film 4, and a GdTbFeCo film having a thickness of 30 is used as the recording film 1.
nm, a TbFeCo film as a recording film 2 of 100 nm, and a silicon nitride film of 80 nm as a protective film 5.

【0019】GdTbFeCo膜のキュリー温度は25
0℃、室温での界面磁壁エネルギー密度は1.5erg
/cm2 である。また、TbFeCo膜のキュリー温度
は150℃、室温での界面磁壁エネルギー密度は2.3
erg/cm2 である。これにより、TbFeCo膜か
らGdTbFeCo膜への界面磁壁のパンチスルーを生
じさせることができる。
The Curie temperature of the GdTbFeCo film is 25.
Interfacial domain wall energy density at 0 ℃ and room temperature is 1.5 erg
/ Cm 2 . The Curie temperature of the TbFeCo film is 150 ° C., and the interface domain wall energy density at room temperature is 2.3.
erg / cm 2 . Thereby, punch-through of the interface domain wall from the TbFeCo film to the GdTbFeCo film can be caused.

【0020】この媒体に、5.6m/sで1MHz,デ
ューティ50%の記録を行ったところ、55dBのC/
Nが得られた。このときの記録磁界は400Oe、レー
ザー波長は830nmである。この媒体の記録パワー依
存性は、この記録膜2のTbFeCo膜の記録パワー依
存性と類似していた。
When recording was performed on this medium at 5.6 m / s at 1 MHz and a duty of 50%, C / 55 dB was obtained.
N was obtained. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. The recording power dependence of this medium was similar to the recording power dependence of the TbFeCo film of the recording film 2.

【0021】他の例として、記録膜1としてTbFeC
o膜を20nm、記録膜2として記録膜1と組成の多少
違うTbFeCo膜を100nm成膜したものを作製し
た。他の膜は上記の例と同じである。記録膜1のTbF
eCo膜のキュリー温度は300℃、室温での界面磁壁
エネルギー密度は2.7erg/cm2 である。また、
記録膜2のTbFeCo膜のキュリー温度は150℃、
室温での界面磁壁エネルギー密度は2.3erg/cm
2 である。この場合、記録膜1ができるはずの界面磁壁
の厚さよりも薄いために、記録膜2から記録膜1への界
面磁壁のパンチスルーが起こる。この媒体に、5.6m
/sで1MHz,デューティ50%の記録を行ったとこ
ろ54dBのC/Nが得られた。このときの記録磁界は
400Oe、レーザー波長は830nmである。この媒
体の記録パワー依存性は、この記録膜2のTbFeCo
膜の記録パワー依存性と類似していた。
As another example, TbFeC is used as the recording film 1.
A 20 nm thick O film and a 100 nm thick TbFeCo film having a composition slightly different from that of the recording film 1 were formed as the recording film 2. The other membranes are the same as in the above example. TbF of recording film 1
The Curie temperature of the eCo film is 300 ° C., and the interface domain wall energy density at room temperature is 2.7 erg / cm 2 . Also,
The Curie temperature of the TbFeCo film of the recording film 2 is 150 ° C.,
Interface domain wall energy density at room temperature is 2.3 erg / cm
Is 2 . In this case, since the recording film 1 is thinner than the thickness of the interface domain wall that should be formed, punch-through of the interface domain wall from the recording film 2 to the recording film 1 occurs. 5.6m on this medium
When recording was performed at 1 MHz and a duty of 50%, a C / N of 54 dB was obtained. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. The recording power dependence of this medium depends on the TbFeCo of the recording film 2.
It was similar to the recording power dependence of the film.

【0022】他の例として、記録膜1としてGdDyF
eCo膜を30nm、記録膜2としてTbFeCo膜を
100nm成膜したものを作製した。他の膜は上記の例
と同じである。GdDyFeCo膜のキュリー温度は4
00℃、室温での界面磁壁エネルギー密度は1.8er
g/cm2 である。TbFeCo膜のキュリー温度は1
50℃、室温での界面磁壁エネルギーは2.3erg/
cm2 である。TbFeCo膜のキュリー温度付近で
は、GdDyFeCo膜の有効異方性磁界は1kOeあ
り、バイアス磁界400Oeではこの膜は磁化反転しな
い。この媒体に、5.6m/sで1MHz,デューティ
50%の記録を行ったところ54dBのC/Nが得られ
た。このときの記録磁界は400Oe、レーザー波長は
830nmである。この媒体の記録パワー依存性は、こ
の記録膜2のTbFeCo膜の記録パワー依存性と類似
していた。
As another example, GdDyF is used as the recording film 1.
An eCo film having a thickness of 30 nm and a recording film 2 having a TbFeCo film having a thickness of 100 nm were formed. The other membranes are the same as in the above example. The Curie temperature of the GdDyFeCo film is 4
Interface domain wall energy density at room temperature of 00 ° C and 1.8er
It is g / cm 2 . Curie temperature of TbFeCo film is 1
The interface domain wall energy at 50 ° C and room temperature is 2.3 erg /
cm 2 . In the vicinity of the Curie temperature of the TbFeCo film, the effective anisotropic magnetic field of the GdDyFeCo film is 1 kOe, and the magnetization of this film does not reverse under the bias magnetic field of 400 Oe. When recording was performed on this medium at 5.6 m / s at 1 MHz and a duty of 50%, a C / N of 54 dB was obtained. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. The recording power dependence of this medium was similar to the recording power dependence of the TbFeCo film of the recording film 2.

【0023】本発明の3層膜を用いたディスクの構成を
図2に示す。このディスクは、基板3に干渉膜4、記録
膜1、記録膜2、記録膜6、保護膜5を順次成膜するこ
とによって得られる。 一例として、基板3として、直
径130mm、トラックピッチ1.6μmのポリカーボ
ネイト基板を用い、その基板3に、干渉膜4として窒化
シリコン膜を80nm、記録膜1としてGdTbFeC
o膜を30nm、記録膜2としてTbFeCo膜を10
0nm、記録膜6としてGdFeCo膜を30nm、保
護膜5として窒化シリコン膜を80nm順次成膜した。
The structure of a disk using the three-layer film of the present invention is shown in FIG. This disc is obtained by sequentially forming an interference film 4, a recording film 1, a recording film 2, a recording film 6 and a protective film 5 on a substrate 3. As an example, a polycarbonate substrate having a diameter of 130 mm and a track pitch of 1.6 μm is used as the substrate 3, a silicon nitride film having a thickness of 80 nm is used as the interference film 4, and a GdTbFeC film is used as the recording film 1 on the substrate 3.
The O film is 30 nm, and the TbFeCo film is 10 as the recording film 2.
0 nm, a GdFeCo film as a recording film 6 having a thickness of 30 nm and a silicon nitride film as a protective film 5 having a thickness of 80 nm were sequentially formed.

【0024】GdTbFeCo膜のキュリー温度は25
0℃、室温での界面磁壁エネルギー密度は1.5erg
/cm2 である。また、TbFeCo膜のキュリー温度
は150℃、室温での界面磁壁エネルギー密度は2.3
erg/cm2 である。また、GdFeCo膜のキュリ
ー温度は310℃、室温での保磁力は数十Oeと小さ
い。これにより、GdFeCo膜からTbFeCo膜を
通りGdTbFeCo膜への界面磁壁のパンチスルーを
生じさせることができる。
The Curie temperature of the GdTbFeCo film is 25.
Interfacial domain wall energy density at 0 ℃ and room temperature is 1.5 erg
/ Cm 2 . The Curie temperature of the TbFeCo film is 150 ° C., and the interface domain wall energy density at room temperature is 2.3.
erg / cm 2 . The Curie temperature of the GdFeCo film is 310 ° C., and the coercive force at room temperature is as small as several tens Oe. As a result, punch-through of the interface domain wall from the GdFeCo film to the GdTbFeCo film through the TbFeCo film can be caused.

【0025】この媒体に、5.6m/sで1MHz,デ
ューティ50%の記録を行ったところ53dBのC/N
が得られた。このときの記録磁界は400Oe、レーザ
ー波長は830nmである。また、キャリアが出始める
磁場が−50Oe、キャリアが飽和する磁場が50Oe
であり、高記録磁界感度を有している。
When recording was performed on this medium at 5.6 m / s at 1 MHz and a duty of 50%, C / N of 53 dB was obtained.
was gotten. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. In addition, the magnetic field at which carriers start to emerge is -50 Oe, and the magnetic field at which carriers saturate is 50 Oe.
And has high recording magnetic field sensitivity.

【0026】他の例として、記録膜1として、TbFe
Co膜を20nm、記録膜2として記録膜1と組成の多
少違うTbFeCo膜を100nm、記録膜6としてG
dFeCo膜を30nm成膜したものを作製した。他の
膜は上記の例と同じである。
As another example, TbFe is used as the recording film 1.
The Co film is 20 nm, the recording film 2 is a TbFeCo film having a composition slightly different from that of the recording film 1, and the recording film 6 is G.
A dFeCo film having a thickness of 30 nm was prepared. The other membranes are the same as in the above example.

【0027】記録膜1のTbFeCo膜のキュリー温度
は300℃、室温での界面磁壁エネルギー密度は2.7
erg/cm2 である。また、記録膜2のTbFeCo
膜のキュリー温度は150℃、室温での界面磁壁エネル
ギー密度は2.3erg/cm2 である。また、GdF
eCo膜のキュリー温度は310℃、室温での保磁力は
数十Oeと小さい。この場合、記録膜1ができるはずの
界面磁壁の厚さよりも薄いために、記録膜2から記録膜
1への界面磁壁のパンチスルーが起こる。この媒体に、
5.6m/sで1MHz,デューティ50%の記録を行
ったところ52dBのC/Nが得られた。このときの記
録磁界は400Oe、レーザー波長は830nmであ
る。また、キャリアが出始める磁場が−100Oe、キ
ャリアが飽和する磁場が50Oeであり、高記録磁界感
度を有している。
The Curie temperature of the TbFeCo film of the recording film 1 is 300 ° C., and the interface domain wall energy density at room temperature is 2.7.
erg / cm 2 . In addition, the TbFeCo of the recording film 2
The Curie temperature of the film is 150 ° C., and the interfacial domain wall energy density at room temperature is 2.3 erg / cm 2 . Also, GdF
The Curie temperature of the eCo film is 310 ° C., and the coercive force at room temperature is as small as several tens of Oe. In this case, since the recording film 1 is thinner than the thickness of the interface domain wall that should be formed, punch-through of the interface domain wall from the recording film 2 to the recording film 1 occurs. In this medium,
When recording was performed at 1 MHz and a duty of 50% at 5.6 m / s, a C / N of 52 dB was obtained. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. Further, the magnetic field at which carriers start to emerge is -100 Oe, and the magnetic field at which carriers are saturated is 50 Oe, which has high recording magnetic field sensitivity.

【0028】他の例として、記録膜1としてGdDyF
eCo膜を30nm、記録膜2としてTbFeCo膜を
100nm、記録膜6としてGdFeCo膜を30nm
成膜したものを作製した。他の膜は上記の例と同じであ
る。GdDyFeCo膜のキュリー温度は400℃、室
温での界面磁壁エネルギー密度は1.8erg/cm2
である。TbFeCo膜のキュリー温度は150℃、室
温での界面磁壁エネルギーは2.3erg/cm2 であ
る。また、GdFeCo膜のキュリー温度は310℃、
室温での保磁力は数十Oeと小さい。TbFeCo膜の
キュリー温度付近では、GdDyFeCo膜の有効異方
性磁界は1kOeあり、バイアス磁界400Oeではこ
の膜は磁化反転しない。
As another example, GdDyF is used as the recording film 1.
The eCo film is 30 nm, the TbFeCo film is 100 nm as the recording film 2, and the GdFeCo film is 30 nm as the recording film 6.
A film was produced. The other membranes are the same as in the above example. The Curie temperature of the GdDyFeCo film is 400 ° C., and the interface domain wall energy density at room temperature is 1.8 erg / cm 2.
Is. The Curie temperature of the TbFeCo film is 150 ° C., and the interfacial domain wall energy at room temperature is 2.3 erg / cm 2 . The Curie temperature of the GdFeCo film is 310 ° C.,
The coercive force at room temperature is as small as tens of Oe. In the vicinity of the Curie temperature of the TbFeCo film, the effective anisotropic magnetic field of the GdDyFeCo film is 1 kOe, and the magnetization of this film does not reverse under the bias magnetic field of 400 Oe.

【0029】この媒体に、5.6m/sで1MHz,デ
ューティ50%の記録を行ったところ53dBのC/N
が得られた。このときの記録磁界は400Oe、レーザ
ー波長は830nmである。また、キャリアが出始める
磁場が−50Oe、キャリアが飽和する磁場が50Oe
あり、高記録磁界感度を有している。
When recording was performed on this medium at 5.6 m / s at 1 MHz and a duty of 50%, C / N of 53 dB was obtained.
was gotten. The recording magnetic field at this time is 400 Oe, and the laser wavelength is 830 nm. In addition, the magnetic field at which carriers start to emerge is -50 Oe, and the magnetic field at which carriers saturate is 50 Oe.
And has a high recording magnetic field sensitivity.

【0030】[0030]

【発明の効果】以上説明したように本発明によれば、光
照射側に最も近い記録膜の記録特性だけでなく他の記録
膜の記録特性も引き出すことができる。また、カー回転
角は大きいが保磁力が大きすぎるまたはキュリー温度が
高すぎ、今までの方法では使用できなかった記録膜を使
用することができるようになる。また、高記録磁界感度
という特性も持ち合わせている媒体を作製できる。した
がって、光磁気記録用媒体の高密度化が可能となり、大
容量光ディスクを実現できる。
As described above, according to the present invention, not only the recording characteristics of the recording film closest to the light irradiation side but also the recording characteristics of other recording films can be obtained. Further, the Kerr rotation angle is large, but the coercive force is too large or the Curie temperature is too high, so that a recording film which cannot be used by the conventional method can be used. Further, it is possible to manufacture a medium having a characteristic of high recording magnetic field sensitivity. Therefore, the density of the magneto-optical recording medium can be increased and a large-capacity optical disc can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるディスク断面図であ
る。
FIG. 1 is a sectional view of a disk according to an embodiment of the present invention.

【図2】本発明の一実施例におけるディスク断面図であ
る。
FIG. 2 is a sectional view of a disk according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 第1記録膜 2 第2記録膜 3 基板 4 干渉膜 5 保護膜 6 第3記録膜 1 First Recording Film 2 Second Recording Film 3 Substrate 4 Interference Film 5 Protective Film 6 Third Recording Film

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】2層以上の記録膜を有し、記録マークを形
成する際、光の照射側に最も近い第1の記録膜に、第1
の記録膜の次に光の照射側に近い第2の記録膜の磁化状
態を転写する過程を有することを特徴とする光磁気記録
用媒体。
1. A recording film having two or more layers, wherein when a recording mark is formed, the first recording film is closest to the light irradiation side.
2. A magneto-optical recording medium having a step of transferring the magnetization state of the second recording film next to the light irradiation side of the second recording film.
【請求項2】請求項1記載の光磁気記録用媒体におい
て、前記第1の記録膜と前記第2の記録膜とを少なくと
も有し、前記第2の記録膜のキュリー温度から室温の温
度領域で、前記第2の記録膜の界面磁壁エネルギー密度
が前記第1の記録膜の界面磁壁エネルギー密度よりも大
きくなる温度領域が存在することを特徴とする光磁気記
録用媒体。
2. The magneto-optical recording medium according to claim 1, which has at least the first recording film and the second recording film, and has a temperature range from a Curie temperature of the second recording film to a room temperature. In the magneto-optical recording medium, there is a temperature region in which the interface domain wall energy density of the second recording film is higher than the interface domain wall energy density of the first recording film.
【請求項3】請求項1記載の光磁気記録用媒体におい
て、前記第1の記録膜と前記第2の記録膜とを少なくと
も有し、前記第2の記録膜のキュリー温度から室温の温
度領域で、前記第1の記録膜と前記第2の記録膜の界面
にできる界面磁壁の厚さが前記第1の記録膜の膜厚より
も大きいことを特徴とする光磁気記録用媒体。
3. The magneto-optical recording medium according to claim 1, which has at least the first recording film and the second recording film, and has a temperature range from a Curie temperature of the second recording film to a room temperature. The magneto-optical recording medium is characterized in that the thickness of the interface domain wall formed at the interface between the first recording film and the second recording film is larger than the film thickness of the first recording film.
【請求項4】請求項1記載の光磁気記録用媒体におい
て、前記第1の記録膜と、前記第2の記録膜と、前記第
2の記録膜のキュリー温度付近で有効垂直異方性磁界
(Hk−4πMs)または保磁力が小さい第3の記録膜
とを少なくとも有し、前記第2の記録膜のキュリー温度
から室温の温度領域で、前記第2の記録膜の界面磁壁エ
ネルギー密度が前記第1の記録膜の界面磁壁エネルギー
密度よりも大きくなる温度領域が存在し、前記第2の記
録膜のキュリー温度付近で、前記第3の記録膜の有効異
方性磁界(Hk−4πMs)または保磁力が記録バイア
ス磁界以下になることを特徴とする光磁気記録用媒体。
4. The magneto-optical recording medium according to claim 1, wherein the effective perpendicular anisotropic magnetic field is near the Curie temperatures of the first recording film, the second recording film and the second recording film. (Hk-4πMs) or a third recording film having a small coercive force, and the interface domain wall energy density of the second recording film is in the temperature range from the Curie temperature of the second recording film to room temperature. There is a temperature region that is higher than the interface domain wall energy density of the first recording film, and near the Curie temperature of the second recording film, the effective anisotropic magnetic field (Hk-4πMs) of the third recording film or A magneto-optical recording medium having a coercive force equal to or less than a recording bias magnetic field.
【請求項5】請求項4記載の光磁気記録用媒体におい
て、前記第1の記録膜と、前記第2の記録膜と、前記第
3の記録膜とを少なくとも有し、前記第2の記録膜のキ
ュリー温度から室温の温度領域で、前記第1の記録膜と
前記第2の記録膜の界面にできる界面磁壁の厚さが前記
第1の記録膜の膜厚よりも大きく、前記第2の記録膜の
キュリー温度付近で、前記第3の記録膜の有効異方性磁
界(Hk−4πMs)または保磁力が記録バイアス磁界
以下になることを特徴とする光磁気記録用媒体。
5. The medium for magneto-optical recording according to claim 4, comprising at least the first recording film, the second recording film, and the third recording film, and the second recording. In the temperature range from the Curie temperature of the film to room temperature, the thickness of the interface domain wall formed at the interface between the first recording film and the second recording film is larger than the film thickness of the first recording film, The magneto-optical recording medium, wherein the effective anisotropic magnetic field (Hk-4πMs) or coercive force of the third recording film becomes equal to or lower than the recording bias magnetic field near the Curie temperature of the recording film.
【請求項6】請求項1〜5のいずれかに記載の光磁気記
録用媒体において、前記第2の記録膜のキュリー温度付
近で、前記第1の記録膜の有効垂直異方性磁界(Hk−
4πMs)または保磁力が記録バイアス磁界以上になる
ことを特徴とする光磁気記録用媒体。
6. The magneto-optical recording medium according to claim 1, wherein the effective perpendicular anisotropic magnetic field (Hk) of the first recording film is near the Curie temperature of the second recording film. −
4πMs) or coercive force is equal to or higher than the recording bias magnetic field, a magneto-optical recording medium.
JP5079954A 1993-04-07 1993-04-07 Magneto-optical recording media Expired - Lifetime JP2624114B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5079954A JP2624114B2 (en) 1993-04-07 1993-04-07 Magneto-optical recording media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5079954A JP2624114B2 (en) 1993-04-07 1993-04-07 Magneto-optical recording media

Publications (2)

Publication Number Publication Date
JPH06295478A true JPH06295478A (en) 1994-10-21
JP2624114B2 JP2624114B2 (en) 1997-06-25

Family

ID=13704710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5079954A Expired - Lifetime JP2624114B2 (en) 1993-04-07 1993-04-07 Magneto-optical recording media

Country Status (1)

Country Link
JP (1) JP2624114B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528563A (en) * 1991-07-18 1993-02-05 Nec Corp Magneto-optical recording and reproducing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528563A (en) * 1991-07-18 1993-02-05 Nec Corp Magneto-optical recording and reproducing method

Also Published As

Publication number Publication date
JP2624114B2 (en) 1997-06-25

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