JPH06302500A - Projection exposure apparatus and method of manufacturing semiconductor device using the same - Google Patents

Abstract

(57) [Summary] (Modified) [Objective] To obtain a projection exposure apparatus capable of performing highly accurate relative alignment between a reticle and a wafer in manufacturing a semiconductor element, and a semiconductor element manufacturing method using the same. thing. An original plate having a pattern to be exposed and transferred, a projection lens 8 for projecting the pattern of the original plate onto an object to be exposed,
Positioning means for mutually aligning the original plate and the exposed object, an XY table 4 on which the original plate or the exposed object is mounted, a rotary table 5 rotatable in a plane parallel to the XY plane, Position detecting means for detecting the position of the original plate or the object to be exposed in the XY directions, rotation measuring means for measuring the rotational fluctuation component of the rotary table in the X direction and / or the Y direction, and on the rotary table and the XY. It has mark detection means for detecting the position detection marks θM and XYM respectively provided on the table, and origin setting means for setting a rotation direction reference origin using a signal from the mark detection means.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for forming a pattern on a flat object such as a wafer or a liquid crystal display panel for manufacturing a semiconductor device, and a method for manufacturing a semiconductor device using the same. It is possible to perform accurate projection exposure by accurately holding the posture of an exposed object such as a wafer to which a circuit pattern is to be printed when manufacturing a high-density integrated circuit chip such as a computer or an arithmetic unit. . Further, the reticle on which the circuit pattern is formed and the wafer can be aligned with high accuracy.

[0002]

2. Description of the Related Art Conventionally, a projection exposure apparatus of this type, for example, a projection exposure apparatus such as a stepper which projects a pattern drawn on a reticle onto a wafer, has a function of aligning the reticle and the wafer. Therefore, the exposure was performed after the alignment was performed.

In such alignment, generally, an amount of deviation between an original plate such as a reticle on which a pattern to be projected is drawn and an object to be exposed such as a wafer is measured, and the object to be exposed is based on the result. Is performed by moving the laser beam by controlling the wavelength with a laser interferometer, or by moving the original plate and the exposed body.

The positioning of the apparatus (wafer stage) is performed by a laser interferometer which measures the length of each of the X and Y axes using laser light, and a table for detecting a yawing (rotation) fluctuation component is used. Two lasers were made incident from two laser interferometers in parallel with the one-axis side. The yaw fluctuation component detection and control during movement in the XY plane are performed by the measurement values based on this one set (two) of laser light.

However, in an apparatus for performing XYθ positioning control using such a laser interferometer, the means for returning to the origin position when the laser interferometer is reset is a photo SW, a differential transformer, etc. There was a problem in accuracy (especially the direction of rotation).

Therefore, at the time of resetting and as a long-term correction for the fluctuation of the reference mirror surface, the relative position between the reticle and the reference mark provided on the wafer stage is measured. As the measuring means, various known methods, for example, a method of directly measuring a reticle and a reference mark with printing light, a method of measuring a reticle and a wafer with a third eye (detector), and a reticle are further used. The method of directly printing the mark No. on the wafer stage and measuring the printing pattern with the third eye was used.

In particular, in an apparatus that uses light from an excimer laser as the exposure light and it is difficult to detect a mark through a projection lens, such as a so-called excimer stepper, a reticle is directly printed for measurement and correction.

In addition, when performing position detection / control by a laser interferometer, as is well known, the refractive index (INDEX) of air changes due to temperature / atmospheric pressure changes on the optical path, which causes an error in the detection value of the laser interferometer. There is a problem that it occurs. Therefore, in the conventional device, a method of monitoring the temperature / atmospheric pressure or providing a reference interferometer and feeding back the variation to the laser interferometer is used.

[0009]

In the conventional positioning apparatus using a laser interferometer, when the reticle pattern is directly printed on the wafer surface for measurement / correction, the laser interferometer is reset and the correction mark is always used. I needed a reticle containing.

Particularly, when the reticle is not set, it takes a very long time to correct the origin of rotation, which is a problem.

A first object of the present invention is to easily perform a rotation origin correction at the time of resetting a laser interferometer by self-diagnosis, enable stable alignment with extremely high accuracy, and to form a pattern on a reticle surface. It is intended to provide a projection exposure apparatus capable of highly accurately projecting onto a wafer surface and a semiconductor element manufacturing method using the same.

Further, it is difficult for all the temperature distributions on the optical path to be practically constant at the installation position of the laser interferometer and the installation position of the thermometer.

Particularly in a sequence in which the step direction is separated from the laser interferometer, the change in magnification of the laser interferometer becomes a more significant positioning error. Further, productivity is mentioned as one of the requirement elements of the stepper. As a wafer stage (XY stage), the step time of the stage has been shortened in order to increase the productivity.

However, the reduction of the positioning time of the stage is limited, and the weight increase due to the addition of functions is considered in the future. Therefore, increasing the productivity has become a big problem together with the improvement of the positioning accuracy.

A second object of the present invention is to have high productivity and to move the stage with high accuracy without being greatly affected by the alignment accuracy even if the temperature, atmospheric pressure, etc., change in a short time, and use it as a reticle. It is an object of the present invention to provide a projection exposure apparatus capable of performing highly accurate alignment with a wafer and projecting a pattern on a reticle surface onto a wafer surface with high resolution, and a method of manufacturing a semiconductor device using the projection exposure apparatus.

[0016]

A projection exposure apparatus of the present invention comprises: (1-1) an original plate having a pattern to be exposed and transferred, a projection lens for projecting the pattern of the original plate onto an object to be exposed, and the original plate. Positioning means for mutually aligning the exposed object, an XY table on which the original plate or the exposed object is mounted, a rotary table rotatable in a plane parallel to the XY plane, the original plate or the exposed object A position detecting means for detecting the position of the body in each of the XY directions, and the rotation fluctuation component of the rotary table are X
Direction and / or Y direction, rotation measuring means, mark detecting means for detecting position detection marks respectively provided on the rotary table and the XY table, and rotation direction using signals from the mark detecting means. It is characterized by having an origin setting means for setting a reference origin.

In particular, the XY table is provided with a plurality of position detection marks, the mark detection means is an optical microscope, a laser scanning type sensor, a macroscopic observation device for macroscopic observation, or an image pickup means and a TV monitor. It is characterized by being a microscope using.

(1-2) An original plate having a pattern to be exposed and transferred, a projection lens for projecting the pattern of the original plate onto an object to be exposed, and a positioning means for aligning the original plate and the object to be exposed with each other. , X on which the original plate or the exposed object is mounted
A Y table, a rotary table rotatable in a plane parallel to the XY plane, position detection means for detecting the position of the original plate or the exposed object in each of XY directions using a laser interferometer, and the exposed object. To control the step movement of the XY table when sequentially exposing the pattern of the original plate in the direction of shortening the step time and / or in the direction of moving the laser interferometer from far to near. It has a control means to operate.

In particular, the X-axis of the original plate and the X-axis of the XY table are offset by a predetermined angle with respect to the rotation direction in the XY plane.

The method of manufacturing a semiconductor device of the present invention includes (1-3) after detecting the relative position between the reticle and the wafer, projecting the pattern on the reticle surface onto the wafer surface with a projection lens. When the semiconductor device is manufactured by exposing the wafer through a developing process, the wafer is mounted X
It is characterized in that a step of setting a rotation direction reference origin of the rotary table is utilized by utilizing position information of position detection marks provided on the rotary table and the XY table which rotate in the Y plane.

(1-4) After the relative position between the reticle and the wafer is detected, the pattern on the reticle surface is sequentially projected and exposed on the wafer surface by a projection lens, and then the wafer is exposed. When manufacturing a semiconductor element through a developing process, a laser interferometer that moves the step movement of an XY table on which the wafer is placed in a direction that shortens the step time and / or detects position information of the XY table. It is characterized by using the process of moving from distant to near.

[0022]

Embodiment 1 FIG. 1 is a schematic view of the essential portions of Embodiment 1 of the present invention. 2 to 5 are schematic views of the table (XY table, θ rotary table) of FIG. 1 as viewed from above.

In the figure, reference numeral 9 is an original plate (reticle) having a pattern to be exposed and transferred, and is illuminated with a light beam from an exposure illumination system (not shown). A projection lens 8 projects and exposes the pattern on the surface of the reticle 9 onto the wafer W, which is placed on the wafer chuck 11 and coated with a resist as an exposure target. Then, the resist on the wafer W surface is subjected to a well-known developing process to manufacture a semiconductor element.

1X is a laser interferometer for measuring the length in the X direction,
1Y is a laser interferometer for measuring the length in the Y direction, and 2Yθ is a laser interferometer for performing yaw measurement. Reference numeral 3 denotes a mirror (measurement surface XY), which is placed on the θ rotation table 5.

The θ rotary table 5 is an XY table (X, Y
It is installed on stage 4). Reference numeral 6 denotes a rotary drive mechanism, which is composed of a piezoelectric element and rotates the θ rotary table 5. Reference numerals 7a and 7b denote X and Y driving units (motors), respectively, which drive the XY table 4.

Reference numeral 10 is a control box, which includes a drive circuit and the like. θM is the detection mark on the rotary table 5, X
YM is a detection mark on the XY table 4, and 16 is an off-axis microscope.

In this embodiment, laser interferometers 1, 2a,
When 2b is reset, the rotary drive mechanism 6 drives the initial position. In this state, the rotation directions of the laser interferometers 1, 2a, 2b are also initialized, and therefore the reproducibility thereof becomes a problem.

In this embodiment, the detection mark XYM is provided on the XY table 4, and the detection mark θM is provided on the θ rotation table 5.
By observing these detection marks XYM, θM with the off-axis microscope 16 and aligning the θ rotary table 5 with the XY table 4, accurate reference (setting) of the rotational direction is performed.

Each of these elements 6, 10, 16 and the like constitutes one element of the origin setting means.

Next, setting (correction) of the reference origin in the rotation direction of the θ rotary table 5 using the origin setting means will be described.

First, it is assumed that FIGS. 2 and 3 show a state in which the X axis of the θ rotary table 5 (Y reference mirror) and the X axis of the reticle 9 are aligned.

Next, it is assumed that the laser interferometer is reset and returned by an error of the angle θ ₁ by the origin switch in the θ rotation mechanism as shown in FIG.

FIG. 5 is an enlarged schematic view of FIG.
The origin correction will be described using.

In FIG. 5, it is assumed that before the origin return, the return error of the angle θ ₁ occurs at the point A and the point B comes. Then, the error ΔX in the X direction due to the error due to the actual rotation center of the rotating mechanism is
X = ΔX ₁ + ΔX ₃ .

The detection mark XY on the XY stage 4
M is fixed on the XY stage 4, but since the rotation error θ _{1 of the} mirror 3 is present, when moving to the position of the off-axis microscope 16 in the Y direction (L2), a new ΔX ₂ is added in the X direction.
Error occurs.

These X-direction values are calculated from the deviation measurement values of the detection marks XYM by the off-axis microscope 16 and the position values of the XY stage 4 which read the respective detection marks. The error ΔX ₃ as an actual measurement value is included in ΔX ₂ when the detection mark XYM on the XY table 4 is read.

This error ΔX = ΔX ₁ + ΔX ₂ + ΔX ₃ is divided by the dimension L4 in FIG. 5 to calculate the angle θ ₁ , and the dimension L will be described here.

Here, for the dimension L2, the XY stage 4 is used.
Calculated from the position and off-axis measurement values. It is necessary to measure the dimensions L1 + L3 in advance. Specifically, an arbitrary mark (which may be the detection mark at this time) on the wafer W is read under the off-axis microscope 16 and an angle (for example, 2 ″) is set by the θ rotation mechanism.
The rotation is performed, and the dimension L1 + L3 is calculated from the change amount of the off-axis measurement value at this time in the X direction.

Regarding the measured values in the Y direction (L direction) at the points A and B, the origin error angle θ ₁ is about 5 ″, which is a value that can be sufficiently ignored. Therefore, θ ₁ = tan It can be calculated by (ΔX / L4).

Next, as shown in FIG. 2 (FIG. 3), the angle θ ₀ (θ ₀ = tan is shown when the θ rotary table 5 is correctly set.
By subtracting (ΔX ₀ / L4)) and rotating the θ rotation table 5 by (θ ₁ −θ ₀ ), the reference of the rotation direction can be easily performed.

This time, the case where the detection marks are provided in the Y direction has been described. However, the detection marks may be provided in the X direction, and further, the detection marks may be provided in both the XY directions and averaged.

For this measurement, yawing control is set to OF.
Either F or ON is fine, but yawing control is ON
With this, it is possible to perform measurement without being affected by the accuracy of the guide.

FIG. 6 is a schematic view of the essential portions of Embodiment 2 of the present invention. FIG. 7 is a schematic view of the stage of FIG. 6 when viewed from above.

In this embodiment, as compared with the first embodiment shown in FIG. 1, two detection marks XYM1 and XYM2 are provided on the XY table 4, a laser interferometer 1X is used for measuring the length in the X direction, and a laser interference for performing yawing measurement. The difference is that a total of 2Xθ is provided, and the other configurations are the same. In FIG.
The same elements as those shown in are given the same reference numerals.

In this embodiment, it is assumed that the XY table 4 and the θ rotary table 5 are in the state shown in FIG. 7 after resetting the laser interferometer as in the first embodiment. It is assumed here that the detection mark θM1 and the detection mark θM2 are read by the off-axis microscope 16. Detection mark θM1,
Since the relationship between θM2 and the mirror 3 to be measured does not change no matter how much the angle θ is rotated, the same measurement value is always shown, and the detection mark θM1 on the θ rotation table 5 is shown.
There is no meaning in θM2 alone.

Therefore, when the detection mark XYM1 and the detection mark XYM2 on the XY table 4 are driven by the XY stage 4 to be read under the off-axis microscope 16 as shown in the lower part of FIG. Mark θM
Since the positional relationship between the mirrors 1 and θM2 has changed, the XY marks θM1 and θM2 of the off-axis microscope 16 are different.
To read

[0047]

[Equation 1] The angle θ1 can be obtained by dividing this value ΔY by the amount of movement of the XY stage 4 in the X direction.

Next, when the θ rotary table 5 is correctly set, the angle θ ₀ (θ ₀ = tan ΔY) similarly measured.
_By subtracting ₀ / L) and rotating the rotary table 5 by (θ ₁ −θ ₀ ), the reference of the rotational direction can be easily performed.

If yawing measurement / control is performed while measuring these detection marks, it is possible to perform measurement without being affected by the guide accuracy.

Although the case where the detection marks are provided in the X direction has been described this time, the detection marks may be provided in the Y direction, and further, the detection marks may be provided in both the XY directions.

As described above, according to the first and second embodiments, the reproducibility error of the rotation origin at the time of resetting the laser interferometer is easily corrected by the automatic measurement of itself, not by means such as direct exposure by printing light. can do.

Further, if the yawing control is turned on during the measurement, the yawing component of the guide portion is not added and the measurement can be performed, so that the rotation correction can be performed with extremely high accuracy.

FIG. 8 is a schematic view of the essential portions of Embodiment 3 of the present invention. In the figure, the same elements as those shown in FIG. 1 are designated by the same reference numerals.

In this embodiment, the laser interferometers 1X, 1Y,
In parallel with the correction of the detection error of 2Yθ, the positional relationship between the reticle 9 and the XY stage 4 in the rotational direction about the Z axis is set with an intentional offset, and the shot layout and the step movement direction are defined to set the step time. The accuracy is improved by shortening (high productivity) and reducing the influence of temperature (atmospheric pressure) changes.

In this embodiment, each of the elements 7a, 7b, 10 etc. constitutes one element of the control means.

Next, the features of this embodiment will be described.

FIG. 9 is a schematic view of an example of a shot array on a wafer surface for transferring a conventional reticle. FIG. 10 is a schematic view of an example of a shot arrangement by the θ angle offset in the XY plane of the reticle stage and the XY stage according to the present invention. 11 and 12 are explanatory views of the laser interferometer and the shot arrangement for reducing the error of the laser interferometer according to the present invention.

First, referring to FIG. 8, the reduction of the stage positioning time (high productivity) will be described.

The X-axis (and Y-axis) of the XY stage 4 is offset from the X-axis (and Y-axis) of the reticle 9 by an angle θ ₁ . Here, a case where an offset of 45 ° is provided will be described.

In the conventional projection exposure apparatus, as shown in FIG. 9, the running (X axis and Y axis) of the XY stage 4 and the X axis (and Y axis) of the reticle 9 are matched and the wafer W is stepwise as shown by the arrow. The pattern was transferred to.

If step exposure is performed in the arrangement and order shown in the figure, the XY stage requires a positioning time of at least 20 mm in each shot.

On the other hand, in this embodiment, as shown in FIG. 10, the reticle and the XY stage axes are offset (45 ° in this case), and as shown in the figure, the shot array, the set state of the wafer W, and the orientation flat portion are also included. W ₀ is arranged with a 45 ° offset.

Thus, the steps of the XY stage are, for example,

[0064]

[Equation 2] The step amount is improved, and the same purpose as the conventional 20 mm step amount for adjacent shots is achieved, and the positioning time is greatly shortened.

Next, the step regulation for reducing the influence of the error of the laser interferometer in this embodiment will be described.

In FIGS. 11 and 12, the direction of the X direction changes for each row, and the error in the Y direction when the Y direction is always stepped in one direction is stepped from the shot of A (laser interferometer 1Y , 2Yθ) and the case of stepping from the B shot.

It is assumed that the fluctuation at the start of the step is set to 0 and the step in the Y direction is performed, and an error of the laser interferometer occurs. Then, the magnification error Δβ becomes Δβ = AY (A is a coefficient), and the error of the laser interferometer can be considered as a function of Y.

When the initial position is A in FIGS. 11 and 12, L
If +100 and L in the case of B, the error δ when starting from the shot of A is considered to be approximately δ = (L + 100−Y) AY. In the case of B, δ = (L + Y) AY.

Here, suppose L is 100 mm and the Y direction is 0.
If the displacement is 100 mm from the

[0070]

[Equation 3] From the calculation, it can be seen that the error is smaller when starting from A.

As a simpler explanation, it is assumed that a laser interferometer error of 0.1 ppm occurs when the amount of movement in the Y direction is 100 mm (here, L = 100 mm).

When A is the starting point, the optical path of the laser interferometer is 2
When the distance is 00 mm, the starting point is 0, and when this is 0, there is an error of 0.1 ppm at the position where the optical path of the laser interferometer becomes 100 mm, so the error amount is 100 mm × 0.1 × 10 ^-6 and 0.01 μ.
The position error is m.

However, when B is the viewpoint, an error of 0.1 ppm occurs when the optical path 100 mm of the laser interferometer is 0 and 200 mm, so a position error of 0.02 μm occurs at 200 mm × 0.1 × 10 ^−6. I will end up.

From the above, in the present embodiment, it is more advantageous that the stepping direction is defined to be closer to the laser interferometer. Therefore, stepping from S1 in FIG. 9 to S1 (or (S1)) in FIG. There is.

Next, another method for shortening the positioning time in this embodiment will be described. Rotation offset around the Z axis between the reticle and the XY stage is 45 ° in the third embodiment.
As described above, this is effective when the movement times of the X step and the Y step are the same.

For example, when there is a difference between the step positioning times in the X direction and the Y direction, the value of the θ rotation offset should be determined according to the difference in the positioning time.

That is, it is preferable that the reticle set is set at 15 °, 30 °, etc., and the shot arrangement and the wafer are also determined according to the values.

As another method for reducing the influence of the error of the laser interferometer, in the case of FIG. 9, instead of moving from shot S6 to shot S7 in the X direction, it goes from shot S6 to shot S12, The step operation of returning to S6 may be performed, and if it is possible to slightly reduce the throughput (productivity), it is advantageous for the error of the laser interferometer.

As described above, according to the third embodiment, the step layout is shortened by defining the shot layout and the step movement direction by providing offsets in the rotational direction positions of the reticle and the XY stage around the Z axis. The high productivity of the device and the influence of changes in temperature (atmospheric pressure) are reduced, and the alignment accuracy is improved.

Next, an embodiment of a method of manufacturing a semiconductor device using the above-described exposure apparatus will be described.

FIG. 13 shows a flow of manufacturing semiconductor devices (semiconductor chips such as IC and LSI, or liquid crystal panels, CCDs, etc.).

In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured.

On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by a lithography technique using the mask and the wafer prepared above.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in step 4, an assembly process (dicing, bonding), a packaging process (chip encapsulation). Etc. are included.

In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 14 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step 1
In 4 (ion implantation), ions are implanted in the wafer.
In step 15 (resist processing), a photosensitive agent is applied to the wafer.

In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the above-described exposure apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed.

By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been difficult to manufacture in the past.

[0090]

According to the present invention, by setting each element as described above, (2-1) Rotation origin correction at the time of resetting the laser interferometer can be easily performed by self-diagnosis, and stable with extremely high accuracy. It is possible to achieve a projection exposure apparatus that enables the above-mentioned alignment (alignment) and can project the pattern on the reticle surface onto the wafer surface with high accuracy, and a semiconductor element manufacturing method using the same.

(2-2) The productivity is high, and even if the temperature, the atmospheric pressure, etc. change in a short time, the stage is moved with high accuracy without being significantly affected by the alignment accuracy, and the reticle and the wafer are moved. It is possible to achieve a projection exposure apparatus capable of performing alignment with high accuracy and projecting a pattern on a reticle surface onto a wafer surface with high resolution, and a semiconductor element manufacturing method using the projection exposure apparatus.

[Brief description of drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is a schematic view of the table of FIG. 1 seen from above.

FIG. 3 is a schematic view of the table of FIG. 1 seen from above.

FIG. 4 is a schematic view of the table of FIG. 1 when viewed from above.

5 is an enlarged explanatory diagram of FIG.

FIG. 6 is a schematic view of the essential portions of Embodiment 2 of the present invention.

FIG. 7 is a schematic view of the table of FIG. 6 viewed from above.

FIG. 8 is a schematic view of the essential portions of Embodiment 3 of the present invention.

FIG. 9 is an explanatory view of a conventional shot layout on a wafer surface.

FIG. 10 is an explanatory view of a shot layout on a wafer surface according to the present invention.

FIG. 11 is an explanatory diagram of a part of FIG.

FIG. 12 is an explanatory diagram of a part of FIG.

FIG. 13 is a flowchart of manufacturing the semiconductor device of the present invention.

FIG. 14 is a flowchart of manufacturing the semiconductor device of the present invention.

[Explanation of symbols]

 1X, 1Y, 2Yθ laser interferometer 3 mirror 4 XY table 5 θ rotary table 6 rotary drive mechanism 7a, 7b XY drive unit 8 projection lens 9 reticle W wafer 10 control unit θM, XYM detection mark

Claims (7)

[Claims] 1. An original plate having a pattern to be exposed and transferred, a projection lens for projecting the pattern of the original plate onto an object to be exposed, a positioning means for mutually aligning the original plate and the object to be exposed, and the original plate. Alternatively, an XY table on which the object to be exposed is mounted, a rotary table rotatable in a plane parallel to the XY plane, position detecting means for detecting the position of the original plate or the object to be exposed in each of XY directions, and the rotation table. A rotation measuring means for measuring the rotation fluctuation component of the table in the X direction and / or the Y direction, a mark detecting means for detecting position detection marks respectively provided on the rotary table and the XY table, and from the mark detecting means. And an origin setting means for setting a rotation direction reference origin using the signal of 1. 2. The projection exposure apparatus according to claim 1, wherein the XY table is provided with a plurality of position detection marks. 3. The mark detection means is an optical microscope, a laser scanning sensor, or a macroscopic observation device for observing with the naked eye.
Alternatively, the projection exposure apparatus according to claim 1 or 2, which is a microscope using an image pickup means and a TV monitor. 4. An original plate having a pattern to be exposed and transferred, a projection lens for projecting the pattern of the original plate onto an object to be exposed, a positioning means for mutually aligning the original plate and the object to be exposed, and the original plate. Alternatively, an XY table on which the object to be exposed is mounted, a rotary table that can rotate in a plane parallel to the XY plane, and a position at which the position of the original plate or the object to be exposed in each XY direction is detected using a laser interferometer. The detection means and the step movement of the XY table when the pattern of the original plate is sequentially exposed on the exposed object in a direction to shorten the step time and / or from a distance from the laser interferometer. A projection exposure apparatus comprising: a control unit that controls the moving direction to one direction. 5. The X-axis of the original plate and the X-axis of the XY table
5. The projection exposure apparatus according to claim 4, wherein the axis is offset by a predetermined angle with respect to the rotation direction in the XY plane. 6. After detecting the relative position between the reticle and the wafer, the pattern on the reticle surface is projected and exposed onto the wafer surface by a projection lens, and the wafer is exposed to a semiconductor element through a developing process. At the time of manufacturing, a step of setting a rotation direction reference origin of the rotary table by using position information of a rotary table that rotates in the XY plane on which the wafer is placed and position detection marks provided on the XY table A method of manufacturing a semiconductor device, comprising: 7. A relative position between a reticle and a wafer is detected, and then a pattern on the reticle surface is successively projected and exposed on the wafer surface by a projection lens, and then the wafer is subjected to a developing treatment step. When manufacturing a semiconductor device through the laser interferometer, the step movement of the XY table on which the wafer is placed is moved in a direction to shorten the step time and / or the laser interferometer for detecting the position information of the XY table. A method of manufacturing a semiconductor element, which uses a process of moving from a distant place to a near place.