JPH0633392Y2 - Sees-type temperature measuring element - Google Patents
Sees-type temperature measuring elementInfo
- Publication number
- JPH0633392Y2 JPH0633392Y2 JP1987048112U JP4811287U JPH0633392Y2 JP H0633392 Y2 JPH0633392 Y2 JP H0633392Y2 JP 1987048112 U JP1987048112 U JP 1987048112U JP 4811287 U JP4811287 U JP 4811287U JP H0633392 Y2 JPH0633392 Y2 JP H0633392Y2
- Authority
- JP
- Japan
- Prior art keywords
- sheath
- temperature measuring
- measuring element
- temperature
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 description 11
- 238000009529 body temperature measurement Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は化学工業,電機工業,その他の熱処理工程にお
いて、温度測定に用いられるシース型熱電対及びシース
型測温抵抗体などのシース型温度測定素子に係り、特に
そのシース構造に関する。[Detailed Description of the Invention] [Industrial field of application] The present invention is a sheath type thermocouple used for temperature measurement in the chemical industry, electrical machinery industry, and other heat treatment processes, and sheath type temperature sensors such as sheath type resistance temperature detectors. The present invention relates to a measuring element, and more particularly to its sheath structure.
シース型熱電対やシース型測温抵抗体などのシース型温
度測定素子は、そのシース構造により、腐食性雰囲気,
屈曲の多い個所,振動の激しい所など厳しい使用条件下
で使用することができるため、熱処理を伴う工程での温
度の測定,制御には極めて有用なものである。A sheath type temperature measuring element such as a sheath type thermocouple or a sheath type resistance temperature detector has a sheath structure,
Since it can be used under severe operating conditions such as locations with many bends and locations with severe vibration, it is extremely useful for measuring and controlling the temperature in processes involving heat treatment.
近年、プラズマ利用技術の応用拡大が進み、特に半導体
素子製造工程などではプラズマエッチング法,プラズマ
CVD(Chemical Vaper Deposition)法が多用されるよう
になって来た。このような工程に於いては、直流又は高
周波の電力が印加されるプラズマ発生電極あるいは被処
理物の温度を測定,制御する必要が生じる。この温度制
御の精度により、製造される半導体素子の収率,性能等
が決定されることになる。In recent years, the application of plasma technology has expanded, and especially in the semiconductor device manufacturing process, plasma etching method, plasma
The CVD (Chemical Vaper Deposition) method has been widely used. In such a process, it is necessary to measure and control the temperature of the plasma generating electrode or the object to be processed to which direct current or high frequency power is applied. The accuracy of this temperature control determines the yield, performance, etc. of the manufactured semiconductor element.
第4図は従来の一例を部分断面で示した図で、シース型
測温抵抗体の場合を示し、第5図(a),(b)はそれ
ぞれ従来の他例を示す斜視図及びその横断面図で、シー
ス型熱電対の場合を示す。FIG. 4 is a partial cross-sectional view of an example of a conventional type, showing a case of a sheath type resistance temperature detector, and FIGS. 5 (a) and 5 (b) are perspective views showing another example of the conventional type and a cross-section thereof. In a side view, the case of a sheath type thermocouple is shown.
これらの従来例は、いずれも金属製シース(細管)1内
に、白金抵抗素子の中心に固定用コアを装設した測温抵
抗素子の熱電対等の測温素子2を収め、かつ金属製シー
ス1内の空間部を高純度のMgO等の熱伝導性のある絶縁
物3で埋めると共に、測温素子2の信号線(導線や素
線)4を金属製シース1の端部より引き出してなるシー
ス型温度測定素子を構成しており、耐熱耐蝕性,耐震
性,絶縁特性,応答性に優れ、引き出し部のシール構造
を適切に選べば高圧容器あるいは真空容器内での温度測
定に利用することができる。In each of these conventional examples, a metal sheath (capillary tube) 1 is provided with a temperature measuring element 2 such as a thermocouple of a temperature measuring resistance element in which a fixing core is mounted at the center of a platinum resistance element, and a metal sheath. The space inside 1 is filled with an insulator 3 having high thermal conductivity such as high-purity MgO, and the signal wire (conductor wire or wire) 4 of the temperature measuring element 2 is pulled out from the end of the metal sheath 1. It consists of a sheath type temperature measuring element, has excellent heat resistance, corrosion resistance, earthquake resistance, insulation characteristics and responsiveness, and can be used for temperature measurement in a high-pressure container or a vacuum container if the seal structure of the drawer part is properly selected. You can
しかしながら上記のような従来のシース型温度測定素子
ではシース部分を被測定物である電極に接触させるた
め、測温素子2は電極から絶縁されていても、電極の電
位変化や外来雑音による影響を受けることになる。特に
高周波電圧が印加される場合には、微少電気信号である
測温素子2からの信号に外来雑音と共に高周波ノイズも
重なり、測定不可能となる。このため、高周波電圧の印
加中は温度測定,制御機能を停止するなどの方法が採用
されているが、完全に見込み運転となり、高精度の温度
測定,制御が実行されず、ひいては製造される半導体素
子の品質を低下させるという問題点がある。However, in the conventional sheath type temperature measuring element as described above, since the sheath portion is brought into contact with the electrode as the object to be measured, even if the temperature measuring element 2 is insulated from the electrode, the influence of the potential change of the electrode or the external noise is not generated. Will receive. Especially when a high frequency voltage is applied, high frequency noise is superimposed on the signal from the temperature measuring element 2 which is a minute electric signal together with external noise, and measurement becomes impossible. For this reason, methods such as temperature measurement and stopping the control function during the application of the high frequency voltage are adopted. However, it is completely expected operation, high-precision temperature measurement and control are not executed, and eventually the semiconductor manufactured. There is a problem that the quality of the device is deteriorated.
本考案は、直流,交流の高電圧あるいは高周波電圧等の
印加される電極などの温度を電圧印加中に於いても、電
位変化や外来雑音の影響を極力軽減して従来よりも正確
に測定することを可能とするシース型温度測定素子を提
供しようとするものである。The present invention reduces the influence of potential change and external noise as much as possible and measures more accurately than before even when the temperature of the electrode to which high voltage such as DC or AC or high frequency voltage is applied is being applied. The present invention is intended to provide a sheath-type temperature measuring element that enables the above.
即ち、本考案素子は第1図示のように金属製シース1内
に測温素子2を収め、かつ金属製シース1内の空間部を
熱伝導性のある絶縁物3で埋めると共に、測温素子2の
信号線4を金属製シース1の端部より引き出してなるシ
ース型温度測定素子において、上記金属性シース1にシ
ールド端子7を接続し、金属製シース1の周囲に外シー
ス5を熱伝導性のある絶縁物6を介して被着せしめてな
る構成としたものである。That is, in the device of the present invention, as shown in FIG. 1, a temperature measuring element 2 is housed in a metal sheath 1 and the space inside the metal sheath 1 is filled with a heat conductive insulator 3. In a sheath-type temperature measuring element in which the signal line 4 of 2 is drawn out from the end of the metal sheath 1, a shield terminal 7 is connected to the metal sheath 1 and an outer sheath 5 is thermally conducted around the metal sheath 1. The structure is such that it is adhered via a flexible insulator 6.
測温時は外シース5を直流,交流の高電圧あるいは高周
波電圧が印加された被測定物に接触させる。そのため外
シース5が金属製の場合は被測定物に印加された直流,
交流あるいは高周波の電圧と同電位になる。At the time of temperature measurement, the outer sheath 5 is brought into contact with the object to be measured to which a high DC or AC voltage or a high frequency voltage is applied. Therefore, when the outer sheath 5 is made of metal, the direct current applied to the DUT,
It has the same potential as the AC or high-frequency voltage.
被測定物の温度はこの外シース5から熱伝導性のある絶
縁物6,内側の金属製シース(以下内シースという)1及
び熱伝導性のある絶縁物3を経て測温素子2の測温部に
伝達され電気信号として取り出される。The temperature of the object to be measured is measured from the outer sheath 5 through a heat conductive insulator 6, an inner metal sheath (hereinafter referred to as an inner sheath) 1 and a heat conductive insulator 3 to measure the temperature of the temperature measuring element 2. And transmitted as an electric signal.
内シース1は接地すると、測温素子2に発生した微少電
気信号を,外来雑音や被測定物に印加された直流,交流
の高電圧や高周波電圧の影響から遮蔽して従来よりも正
確な温度測定を可能にする役目を果たす。When the inner sheath 1 is grounded, the minute electric signal generated in the temperature measuring element 2 is shielded from external noise and the influence of high voltage or high frequency voltage of direct current and alternating current applied to the object to be measured so that the temperature is more accurate than before. It serves to enable measurement.
この作用は外シース5が金属製でなく熱伝導性絶縁物に
より作られている場合にも同様である。This effect is the same when the outer sheath 5 is made of a heat conductive insulator instead of a metal.
以下図面により本考案の実施例を説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本考案素子の一実施例を示す断面図で、1は金
属製シース(細管)、2はこの金属製シース1内に収め
られた熱電対である。3は金属製シース1と熱電対2と
の間に充填されたMgOを代表とする熱伝導性のある電気
絶縁物である。熱電対2の信号線(素線)4は金属製シ
ース1の端部より引き出されている。8は信号線端子、
7はシース1に接続されたシールド端子である。5は金
属製シース1の測温側部分1aの周囲に配置された外シー
スで本実施例では金属製であり、6はこの外シース5と
内側の金属製シース(内シースという)1との間に充填
されたMgOを代表とする熱伝導性のある電気絶縁物であ
る。FIG. 1 is a cross-sectional view showing an embodiment of the device of the present invention, 1 is a metal sheath (capillary tube), and 2 is a thermocouple housed in the metal sheath 1. Reference numeral 3 is an electrically insulating electrical insulator, typically MgO, filled between the metallic sheath 1 and the thermocouple 2. The signal wire (strand) 4 of the thermocouple 2 is drawn out from the end of the metal sheath 1. 8 is a signal line terminal,
Reference numeral 7 is a shield terminal connected to the sheath 1. Reference numeral 5 denotes an outer sheath arranged around the temperature measurement side portion 1a of the metal sheath 1 and is made of metal in the present embodiment. Reference numeral 6 denotes the outer sheath 5 and the inner metal sheath (referred to as inner sheath) 1. It is an electrically insulating material having thermal conductivity represented by MgO filled in between.
外シース5は例えば第2図示のように真空容器9内に設
けられた直流,交流の高電圧あるいは高周波の電圧が印
加される電極等の被測定物10に接触させ、真空容器9の
保持孔にシール用Oリング11を介在させて取付けられ
る。熱電対2の信号線端子8は、熱電対2に発生した微
少熱起電力あるいは微少熱電流(電気信号という)を入
力する温度測定,制御器12の入力端子にシールドケーブ
ル13の信号線により接続され、内シース1のシールド端
子7はシールドケーブル13のシールド線(編組線)によ
りそのアース端子に接続される。The outer sheath 5 is brought into contact with an object to be measured 10 such as an electrode to which a DC or AC high voltage or a high frequency voltage is applied, which is provided in the vacuum container 9 as shown in FIG. It is mounted with a sealing O-ring 11 interposed. The signal line terminal 8 of the thermocouple 2 is connected to the input terminal of the temperature measuring and controller 12 for inputting a minute thermoelectromotive force or a minute thermal current (referred to as an electric signal) generated in the thermocouple 2 by the signal line of the shield cable 13. The shield terminal 7 of the inner sheath 1 is connected to its ground terminal by the shield wire (braided wire) of the shield cable 13.
外シース5は直流,交流の高電圧あるいは高周波の電圧
が印加された被測定物10に接触して取付けられているた
め、被測定物10の電位と同電位になる。Since the outer sheath 5 is attached in contact with the DUT 10 to which a high voltage of DC or AC or a high frequency voltage is applied, the outer sheath 5 has the same potential as that of the DUT 10.
被測定物10の温度は、外シース5から熱伝導性のある絶
縁物6,内シース1及び熱伝導性のある絶縁物3を経て熱
電対2の測温部に伝達され電気信号として取り出され
る。この電気信号は温度測定,制御器12に入力されて測
定され、あるいは温度制御に供せられる。The temperature of the object to be measured 10 is transmitted from the outer sheath 5 through the thermally conductive insulator 6, the inner sheath 1 and the thermally conductive insulator 3 to the temperature measuring portion of the thermocouple 2 and is taken out as an electric signal. . This electric signal is input to the temperature measuring / controlling device 12 to be measured or used for temperature control.
内シース1はシールドケーブル13のシールド線により温
度測定.制御器12のアース端子に接続されているので、
熱電対2に発生した微少電気信号を,外来雑音,並びに
被測定物10に印加された直流,交流の高電圧や高周波電
圧の影響から遮蔽する働きをするから、正確な温度測
定,あるいは温度制御ができる。The temperature of the inner sheath 1 is measured by the shield wire of the shield cable 13. Since it is connected to the ground terminal of controller 12,
Accurate temperature measurement or temperature control because it works to shield the minute electric signal generated in the thermocouple 2 from external noise and the influence of high voltage and high frequency voltage of direct current and alternating current applied to the DUT 10. You can
第3図は内シース1を真空容器9に取付けられた安全箱
14に接続して接地し、熱電対2の信号線端子8を温度測
定,制御器12の入力端子にシールドケーブル13の信号線
により接続し、このシールドケーブル13のシールド線を
そのアース端子に接続した場合を示す。FIG. 3 shows a safety box in which the inner sheath 1 is attached to the vacuum container 9.
Connect to 14 and ground, connect the signal wire terminal 8 of the thermocouple 2 to the input terminal of the temperature measurement and controller 12 with the signal wire of the shield cable 13, and connect the shield wire of this shield cable 13 to its ground terminal. The case is shown.
熱電対2の信号線端子8と内シース1のシールド端子7
は上記第2図示のように温度測定,制御器12の入力端
子,アース端子までシールドケーブル13により導くの
で、被測定物10の電位による影響防止と外来雑音の混入
防止に最も効果的であるが、第3図示のように測温部の
近くで接地しても、被測定物10の電位による影響を防止
することができる。この場合も外来雑音による影響を軽
減できる。Signal line terminal 8 of thermocouple 2 and shield terminal 7 of inner sheath 1
Is guided to the temperature measurement, the input terminal of the controller 12 and the ground terminal by the shielded cable 13 as shown in the second diagram above, so it is most effective in preventing the influence of the potential of the DUT 10 and the mixing of external noise. Even when grounded near the temperature measuring section as shown in FIG. 3, the influence of the potential of the DUT 10 can be prevented. Also in this case, the influence of external noise can be reduced.
本実施例では、測温素子2として熱電対を用いた場合を
説明したが、測温抵抗素子を用いても同様に構成でき、
説明することができることは勿論である。In this embodiment, the case where the thermocouple is used as the temperature measuring element 2 has been described, but the same structure can be obtained by using the temperature measuring resistance element.
Of course, it can be explained.
また、外シース5が金属製でなく、熱伝導性絶縁物によ
り作られている場合も同様である。The same applies when the outer sheath 5 is not made of metal but made of a heat conductive insulator.
上記のように本考案によれば、金属製シース1にシール
ド端子7を接続し、金属製シース1の周囲に外シース5
を熱伝導製のある絶縁物6を介して被着せしめてなるの
で、金属製シース1を接地することにより測温素子2に
発生した微少電気信号を,被測定物に印加された直流,
交流の高電圧あるいは高周波の電圧による雑音や外来雑
音から遮蔽(静電遮蔽及び/または電磁遮蔽)すること
ができるから、直流,交流の高電圧あるいは高周波の電
圧が印加された電極など,電位のある被測定物の温度を
従来よりも正確に測定することができる。As described above, according to the present invention, the shield terminal 7 is connected to the metal sheath 1 and the outer sheath 5 is provided around the metal sheath 1.
Is adhered via an insulating material 6 made of heat conduction, a minute electric signal generated in the temperature measuring element 2 by grounding the metal sheath 1 is applied to the object to be measured.
Since it is possible to shield (electrostatic shield and / or electromagnetic shield) from noise and external noise due to AC high voltage or high frequency voltage, it is possible to apply a potential such as an electrode to which DC or AC high voltage or high frequency voltage is applied. The temperature of a certain object can be measured more accurately than before.
電位のある被測定物の温度を正確に測定できるので、化
学工業,電機工業,その他の熱処理工程における温度制
御を高精度に実行できるようになり、延いては製造され
る半導体素子の製品の品質を向上させることができる。Since the temperature of an object to be measured having an electric potential can be accurately measured, temperature control in the chemical industry, electrical industry, and other heat treatment processes can be performed with high accuracy, which in turn leads to the quality of manufactured semiconductor device products. Can be improved.
また、本考案による素子は上記従来の技術の項で述べた
素子の有する特長を殆ど損なうことはない。Further, the device according to the present invention does not substantially impair the features of the device described in the section of the prior art.
第1図は本考案素子の一実施例を示す断面図、第2図及
び第3図はそれぞれ本考案素子を真空容器に適用し、温
度測定,制御器により温度測定,温度制御を行う場合の
説明図、第4図は従来の一例を部分断面で示した図、第
5図(a),(b)はそれぞれ従来の他例を示す斜視図
及びその横断面図である。 1……金属製シース、2……測温素子(熱電対)、3…
…熱伝導性のある絶縁物、4……信号線、5……外シー
ス、6……熱伝導性のある絶縁物。FIG. 1 is a cross-sectional view showing an embodiment of the device of the present invention, and FIGS. 2 and 3 show the case of applying the device of the present invention to a vacuum container for temperature measurement and temperature control by a controller. Explanatory drawing, FIG. 4 is a diagram showing a partial example of a conventional example, and FIGS. 5 (a) and 5 (b) are a perspective view and a transverse sectional view showing another example of the conventional example. 1 ... Metal sheath, 2 ... Temperature measuring element (thermocouple), 3 ...
… Insulator with thermal conductivity, 4 …… Signal line, 5 …… Outer sheath, 6 …… Insulator with thermal conductivity.
Claims (1)
つ金属製シース1内の空間部を熱伝導性のある絶縁物3
で埋めると共に、測温素子2の信号線4を金属製シース
1の端部より引き出してなるシース型温度測定素子にお
いて、上記金属製シース1にシールド端子7を接続し、
金属製シース1の周囲に金属製外シース5を熱伝導性の
ある絶縁物6を介して被着せしめてなるシース型温度測
定素子。1. A temperature measuring element 2 is housed in a metallic sheath 1, and a space inside the metallic sheath 1 is made of an insulating material 3 having thermal conductivity.
In the sheath-type temperature measuring element obtained by filling the signal wire 4 of the temperature measuring element 2 from the end portion of the metal sheath 1 while connecting the shield terminal 7 to the metal sheath 1,
A sheath-type temperature measuring element in which a metallic outer sheath 5 is attached to the periphery of a metallic sheath 1 with an insulating material 6 having heat conductivity interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987048112U JPH0633392Y2 (en) | 1987-03-30 | 1987-03-30 | Sees-type temperature measuring element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987048112U JPH0633392Y2 (en) | 1987-03-30 | 1987-03-30 | Sees-type temperature measuring element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63155033U JPS63155033U (en) | 1988-10-12 |
| JPH0633392Y2 true JPH0633392Y2 (en) | 1994-08-31 |
Family
ID=30869345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987048112U Expired - Lifetime JPH0633392Y2 (en) | 1987-03-30 | 1987-03-30 | Sees-type temperature measuring element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0633392Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002162296A (en) * | 2000-11-27 | 2002-06-07 | Nippon Dennetsu Co Ltd | Heater with temperature sensor |
| US20220020571A1 (en) * | 2020-07-16 | 2022-01-20 | Tokyo Electron Limited | Temperature sensor and plasma processing apparatus |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990081157A (en) * | 1998-04-27 | 1999-11-15 | 김덕중 | Internal temperature measuring device of gasifier |
| KR20020052869A (en) * | 2000-12-26 | 2002-07-04 | 이구택 | Shunt error free sheathed thermocouple |
| JP5189419B2 (en) * | 2008-06-30 | 2013-04-24 | アズビル株式会社 | Temperature sensor |
| JP2010054491A (en) * | 2008-07-30 | 2010-03-11 | Saginomiya Seisakusho Inc | Temperature measuring sensor and temperature measuring device using the temperature measuring sensor |
| KR101277773B1 (en) * | 2012-12-28 | 2013-06-24 | 우진 일렉트로나이트(주) | Replacement device for holder and holder assembly |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118933U (en) * | 1981-01-19 | 1982-07-23 |
-
1987
- 1987-03-30 JP JP1987048112U patent/JPH0633392Y2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002162296A (en) * | 2000-11-27 | 2002-06-07 | Nippon Dennetsu Co Ltd | Heater with temperature sensor |
| US20220020571A1 (en) * | 2020-07-16 | 2022-01-20 | Tokyo Electron Limited | Temperature sensor and plasma processing apparatus |
| KR20220009898A (en) * | 2020-07-16 | 2022-01-25 | 도쿄엘렉트론가부시키가이샤 | Temperature sensor and plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63155033U (en) | 1988-10-12 |
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