JPH06334315A - How to join chip parts - Google Patents
How to join chip partsInfo
- Publication number
- JPH06334315A JPH06334315A JP5115641A JP11564193A JPH06334315A JP H06334315 A JPH06334315 A JP H06334315A JP 5115641 A JP5115641 A JP 5115641A JP 11564193 A JP11564193 A JP 11564193A JP H06334315 A JPH06334315 A JP H06334315A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- semiconductor substrate
- adhesive layer
- heated
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Supply And Installment Of Electrical Components (AREA)
- Micromachines (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
(57)【要約】
【目的】 良好な気密性を保つことができ、さらに接着
剤のはみ出しもない理想的なチップ部品の接合方法を提
供する。
【構成】 フィルム状接着剤を上型半導体基板３の長辺
側壁１０ａ，１０ｂの下面、短辺側壁１１ａ，１１ｂの
下面及びガス噴射孔７を設けた壁の下面に離型紙を介し
て押し付ける。そして約６０〜８０℃に加熱した後に剥
がせば、各側壁の下面等には接着剤層５１のみが取り残
される。最後に、この上型半導体基板３を下側半導体基
板２と組み合わせて加圧しながら１００〜１５０℃に加
熱して接合を完了する。
(57) [Abstract] [Purpose] To provide an ideal method for joining chip parts, which can maintain good airtightness and does not cause the adhesive to stick out. [Structure] A film adhesive is pressed against the lower surfaces of the long side walls 10a and 10b, the lower surfaces of the short side walls 11a and 11b, and the lower surface of the wall provided with the gas injection holes 7 of the upper semiconductor substrate 3 through a release paper. Then, if it is peeled off after being heated to about 60 to 80 ° C., only the adhesive layer 51 is left on the lower surface of each side wall and the like. Finally, the upper semiconductor substrate 3 is combined with the lower semiconductor substrate 2 and heated to 100 to 150 ° C. while applying pressure to complete the bonding.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、微小なガスレートセン
サ、圧力センサ、ガスセンサ等のマイクロマシニング素
子用のチップ部品同士、あるいはこのチップ部品と回路
基板との接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip component for a micromachining element such as a minute gas rate sensor, a pressure sensor, a gas sensor or the like, or a method for joining the chip component and a circuit board.
【０００２】[0002]
【従来の技術】従来、例えば特開平３−２９８５８号公
報に記載されるように、マイクロマシニング素子の１種
であるガスレートセンサチップ（ガス式角速度検出器）
を製造するには、チップ部品である上側半導体基板及び
下側半導体基板のそれぞれにガス通路等の半溝をエッチ
ング等によって形成し、これらを組み合わせて接着して
いる。そして、上記接着の方法としては、ガラス−Ｓi
間の陽極接合や低融点ガラスを用いた接着方法が知られ
ている。2. Description of the Related Art Conventionally, as described in, for example, Japanese Patent Laid-Open No. 3-29858, a gas rate sensor chip (gas type angular velocity detector) which is one type of micromachining element.
In order to manufacture, a half groove such as a gas passage is formed in each of the upper semiconductor substrate and the lower semiconductor substrate which are chip parts by etching or the like, and these are combined and bonded. And, as the above-mentioned bonding method, glass-Si
Anodic bonding between them and a bonding method using low melting point glass are known.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上述の陽極接
合ではガラスとＳiとの接合に限られるという難点があ
り、また、陽極接合、低融点ガラスによる接合のどちら
もチップ内の電気配線を跨いだ接着は、この電気配線と
の境目に空隙が生じるため気密性を保つことが非常に困
難であり、さらに接着剤がはみ出して前記ガス通路等が
狭くなったり詰ってしまう等の問題もあった。However, the above-mentioned anodic bonding has a problem that it is limited to the bonding of glass and Si, and both the anodic bonding and the bonding by the low melting point glass straddle the electric wiring in the chip. However, it is very difficult to maintain the airtightness of the adhesive because there is a void at the boundary with the electric wiring, and there is also a problem that the adhesive protrudes and the gas passages are narrowed or clogged. .
【０００４】本発明は、従来の技術が有するこのような
問題点を解決するためになされたものであり、その目的
とするところは接着面の材質に依存せず、かつ多少の凹
凸が存在しても良好な気密性を保つことができ、さらに
接着剤のはみ出しもない理想的なチップ部品の接合方法
を提供しようとするものである。The present invention has been made in order to solve the above-mentioned problems of the prior art. The object of the present invention is that it does not depend on the material of the adhesive surface and that there are some irregularities. However, it is intended to provide an ideal method for joining chip parts, which is capable of maintaining good airtightness and has no adhesive protruding.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決すべく本
発明は、接着剤として補強材及び接着剤層からなるフィ
ルム状接着剤を用い、このフィルム状接着剤を切り取
り、型抜きし、もしくはそのままの状態でチップ部品も
しくは回路基板の接合面に押し付けながら、接着剤層は
軟化するが硬化はしない温度まで加熱して接着剤層を前
記接合面に移行させ、この接合面に接合相手であるチッ
プ部品もしくは回路基板の接合面を合わせた後、接着剤
層を硬化させる。In order to solve the above-mentioned problems, the present invention uses a film adhesive composed of a reinforcing material and an adhesive layer as an adhesive, and cuts the film adhesive, cuts the die, or While pressing as it is against the joint surface of the chip component or the circuit board, the adhesive layer is heated to a temperature at which it softens but does not harden, and the adhesive layer is transferred to the joint surface, which is the joint partner on this joint surface. After matching the bonding surfaces of the chip component or the circuit board, the adhesive layer is cured.
【０００６】[0006]
【作用】本発明の方法は、熱硬化性接着剤を接合面に載
せた後に加熱によって軟化状態とし、相手部材の接合面
と合せる。熱硬化性樹脂は上記加熱の残熱によって、あ
るいは更なる加熱によって硬化する。In the method of the present invention, the thermosetting adhesive is placed on the joint surface and then heated to bring it into a softened state, which is then matched with the joint surface of the mating member. The thermosetting resin is cured by the residual heat of the above heating or by further heating.
【０００７】[0007]
【実施例】以下に図に基づいて本発明の実施例を説明す
る。図１は、本発明の接合方法の一例をガスレートセン
サチップを例として示したものである。同図において、
ガスレートセンサチップ１は、下側半導体基板２及び上
型半導体基板３を組み合わせてなるものである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an example of the bonding method of the present invention using a gas rate sensor chip as an example. In the figure,
The gas rate sensor chip 1 is a combination of a lower semiconductor substrate 2 and an upper semiconductor substrate 3.
【０００８】下側半導体基板２はエッチングによって半
溝を形成して箱型の半体としてあり、その長辺方向の側
壁上面４ａ，４ｂをヒートワイヤブリッジ５が跨いでい
る。そしてヒートワイヤブリッジ５の中央側面には、ガ
ス流方向の変化を感知するための一対のヒートワイヤ６
ａ，６ｂが備えられている。またヒートワイヤ６ａ，６
ｂに対向する位置にはガス噴射孔７の下半分を形成して
ある。The lower semiconductor substrate 2 has a half groove formed by etching to form a box-shaped half body, and a heat wire bridge 5 straddles the side wall upper surfaces 4a and 4b in the long side direction. On the central side surface of the heat wire bridge 5, a pair of heat wires 6 for sensing a change in the gas flow direction.
a and 6b are provided. In addition, the heat wires 6a, 6
The lower half of the gas injection hole 7 is formed at a position facing b.
【０００９】一方、上型半導体基板３もエッチングによ
って半溝を形成して箱型の半体としてあり、その長辺方
向の両端部付近底面にはガス導入口８及びガス排出口９
をそれぞれ穿設してある。また、ガス導入口８の中央寄
りには図示しないガス噴射孔７の上半分も形成してあ
る。On the other hand, the upper semiconductor substrate 3 is also formed into a box-shaped half body by forming a half groove by etching, and a gas introduction port 8 and a gas discharge port 9 are formed on the bottom surface near both ends in the long side direction.
Are drilled respectively. An upper half of the gas injection hole 7 (not shown) is also formed near the center of the gas introduction port 8.
【００１０】本発明の方法に基づいて下側半導体基板２
及び上型半導体基板３を接合するには、先ず補強材の片
面もしくは両面に接着剤層を設けたフィルム状接着剤を
用意する。図２は、本発明に基づくフィルム状接着剤の
一例を示す部分断面図である。同図において、このフィ
ルム状接着剤５０は、被接着体の組成に応じて接着剤の
種類を適宜変えることができるが、例えばエポキシプレ
ポリマー等の熱硬化性樹脂からなる接着剤層５１が、例
えばポリイミド等の可撓性樹脂からなるフィルム状補強
材５２の両面にコーティングされたものである。このよ
うなフィルム状接着剤５０のさらに具体的な例として
は、エイブルフィルム５５０Ｋｐｔｎ（エイブルスティ
ック社製）を挙げることができる。Lower semiconductor substrate 2 based on the method of the present invention
In order to bond the upper semiconductor substrate 3 to each other, first, a film adhesive having an adhesive layer provided on one side or both sides of the reinforcing material is prepared. FIG. 2 is a partial cross-sectional view showing an example of the film adhesive according to the present invention. In the figure, the film-like adhesive 50 can appropriately change the kind of the adhesive depending on the composition of the adherend. For example, the adhesive layer 51 made of a thermosetting resin such as epoxy prepolymer is For example, the film-shaped reinforcing member 52 made of a flexible resin such as polyimide is coated on both sides. A more specific example of such a film adhesive 50 is Able Film 550 Kptn (Able Stick Co., Ltd.).
【００１１】図１に戻って説明を続ける。次に、フィル
ム状接着剤５０を上型半導体基板３の長辺側壁１０ａ，
１０ｂの下面、短辺側壁１１ａ，１１ｂの下面及びガス
噴射孔７を設けた壁の下面に離型紙を介して押し付け
る。そして約６０〜８０℃に加熱した後に剥がせば、各
側壁の下面等には接着剤層５１のみが取り残される。最
後に、この上型半導体基板３を下側半導体基板２と組み
合わせて加圧しながら１００〜１５０℃に加熱して接合
を完了する。Returning to FIG. 1, the description will be continued. Next, the film adhesive 50 is applied to the long side wall 10a of the upper semiconductor substrate 3,
It is pressed against the lower surface of 10b, the lower surfaces of the short side walls 11a and 11b, and the lower surface of the wall provided with the gas injection holes 7 through a release paper. Then, if it is peeled off after being heated to about 60 to 80 ° C., only the adhesive layer 51 is left on the lower surface of each side wall and the like. Finally, the upper semiconductor substrate 3 is combined with the lower semiconductor substrate 2 and heated to 100 to 150 ° C. while applying pressure to complete the bonding.
【００１２】上記フィルム状接着剤５０は基板側壁下面
等の形状に合わせて切り取りあるいは型抜きして用いて
もよいが、特に型合せをせずにそのままの状態で使用し
ても、接着剤層５１は６０〜８０℃に加熱したときに接
触している部分にのみ移動するため不要な部分にはみ出
す心配はない。The film-like adhesive 50 may be cut or die-cut according to the shape of the lower surface of the side wall of the substrate, etc., but the adhesive layer may be used as it is without any particular die-matching. Since 51 moves only to the part in contact with it when heated to 60 to 80 ° C., there is no fear of protruding to an unnecessary part.
【００１３】本発明に基づく接合方法によれば、ある程
度の厚み（例えば１０ミクロン）を有する接着剤層５１
を均一に接合面に付与できるため、半導体基板面の凹凸
（１ミクロン前後）、あるいは側壁上面４ａ，４ｂとこ
れらに重なるヒートワイヤブリッジ５の配線の段差等
（１ミクロン前後）を完全に塞いで接着することができ
る。従って、ガスレートセンサチップ１の気密性を完全
なものにすることができる。According to the joining method of the present invention, the adhesive layer 51 having a certain thickness (for example, 10 microns).
Can be uniformly applied to the joint surface, so that the unevenness of the semiconductor substrate surface (around 1 micron) or the step difference (around 1 micron) of the side surfaces 4a, 4b of the heat wire bridge 5 overlapping these and the like (around 1 micron) is completely closed. Can be glued. Therefore, the airtightness of the gas rate sensor chip 1 can be perfected.
【００１４】上述の接合方法の手順は状況に応じていろ
いろ変化させることができる。例えば、図２に示したよ
うな両面接合用フィルム状接着剤５０を使用する場合の
他の方法として、下側半導体基板２及び上型半導体基板
３の間にフィルム状接着剤５０を直接挟んで６０〜８０
℃に加熱し、その後に離すと接着剤層５１は両半導体基
板の側壁面等に付着する。次にこれら半導体基板を再び
組み合わせて１００〜１５０℃に加熱すれば、片面に接
着剤層５１を付与した場合よりもより高い接着性を得る
ことができる。ただしこの場合、ヒートワイヤ６ａ，６
ｂに接着剤層５１が付着しないようにある程度フィルム
状接着剤５０の形状を調整しておく必要がある。また、
補強材５２の片面に接着剤層５１を設けたフィルム状接
着剤５０を使用すれば、前記離型紙を用いることなく接
着剤層５１の付与を行うことができる。The procedure of the above-described joining method can be variously changed depending on the situation. For example, as another method of using the double-sided bonding film adhesive 50 as shown in FIG. 2, the film adhesive 50 is directly sandwiched between the lower semiconductor substrate 2 and the upper semiconductor substrate 3. 60-80
The adhesive layer 51 adheres to the side wall surfaces of both semiconductor substrates and the like when heated to 0 ° C. and then released. Next, when these semiconductor substrates are recombined and heated to 100 to 150 ° C., higher adhesiveness can be obtained as compared with the case where the adhesive layer 51 is provided on one surface. However, in this case, the heat wires 6a, 6
It is necessary to adjust the shape of the film adhesive 50 to some extent so that the adhesive layer 51 does not adhere to b. Also,
If the film adhesive 50 having the adhesive layer 51 on one surface of the reinforcing material 52 is used, the adhesive layer 51 can be applied without using the release paper.
【００１５】本発明に基づく接合方法を使用し、さらに
下側半導体基板２及び上型半導体基板３の位置合せ機構
を付加すれば、精密なガス流路を形成した理想的なガス
レートセンサチップ１を実現することができる。また、
ガスレートセンサ以外にも、圧力センサ、ガスセンサ等
のマイクロマシニング素子用のチップ部品同士、あるい
はこのチップ部品と回路基板との接合を好適に行うこと
ができる。By using the bonding method according to the present invention and further adding a positioning mechanism for the lower semiconductor substrate 2 and the upper semiconductor substrate 3, an ideal gas rate sensor chip 1 having a precise gas flow path is formed. Can be realized. Also,
In addition to the gas rate sensor, chip components for micromachining elements such as a pressure sensor and a gas sensor, or the chip component and a circuit board can be preferably joined.
【００１６】[0016]
【発明の効果】以上に説明したように本発明の方法によ
れば、接着剤として補強材及び接着剤層からなるフィル
ム状接着剤を用いるため、接着剤がはみ出してガスの流
路を塞ぐ等の不都合が生じない。また、このフィルム状
接着剤を接合面に押し付けながら、接着剤層は軟化する
が硬化はしない温度まで加熱して接着剤層を接合面に移
行させるため、この接合面には均一な厚さの接着剤が隅
々まで行き渡り接着不良を起こすことがない。さらに、
この接合面に接合相手であるチップ部品もしくは回路基
板の接合面を合わせた後、接着剤層を硬化させるため、
多少の凹凸が存在しても良好な気密性を保つことができ
る。As described above, according to the method of the present invention, since the film-like adhesive composed of the reinforcing material and the adhesive layer is used as the adhesive, the adhesive is squeezed out to block the gas flow path. The inconvenience of does not occur. Further, while pressing the film adhesive onto the joint surface, the adhesive layer is heated to a temperature at which the adhesive layer softens but does not harden so that the adhesive layer is transferred to the joint surface. The adhesive does not spread to every corner and cause poor adhesion. further,
After aligning the joint surface of the chip component or the circuit board that is the joint partner with this joint surface, to cure the adhesive layer,
Even if there are some irregularities, good airtightness can be maintained.
【図１】本発明の接合方法の一例をガスレートセンサチ
ップを例として示した分解斜視図FIG. 1 is an exploded perspective view showing an example of a bonding method of the present invention using a gas rate sensor chip as an example.
【図２】本発明に基づくフィルム状接着剤の一例を示す
部分断面図FIG. 2 is a partial sectional view showing an example of a film adhesive according to the present invention.
１…ガスレートセンサチップ、２…チップ部品（下側半
導体基板）、３…チップ部品（上側半導体基板）、４
ａ，４ｂ…側壁上面、５…ヒートワイヤブリッジ、６
ａ，６ｂ…ヒートワイヤ、７…ガス噴射孔、８…ガス導
入口、９…ガス排出口、１０ａ，１０ｂ，１１ａ，１１
ｂ…側壁、５０…フィルム状接着剤、５１…接着剤層、
５２…補強材。1 ... Gas rate sensor chip, 2 ... Chip component (lower semiconductor substrate), 3 ... Chip component (upper semiconductor substrate), 4
a, 4b ... Side wall upper surface, 5 ... Heat wire bridge, 6
a, 6b ... Heat wire, 7 ... Gas injection hole, 8 ... Gas inlet, 9 ... Gas outlet, 10a, 10b, 11a, 11
b ... Side wall, 50 ... Film adhesive, 51 ... Adhesive layer,
52 ... Reinforcing material.
フロントページの続き (72)発明者 鶴岡 泰治 東京都港区虎ノ門１丁目７番12号 沖電気 工業株式会社内Front page continuation (72) Inventor Taiji Tsuruoka 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.
Claims (1)
路基板とを接着剤を用いて接合する方法において、この
方法は、前記接着剤として補強材及び接着剤層からなる
フィルム状接着剤を用い、このフィルム状接着剤を切り
取り、型抜きし、もしくはそのままの状態で前記チップ
部品もしくは回路基板の接合面に押し付けながら、接着
剤層は軟化するが硬化はしない温度まで加熱して接着剤
層を前記接合面に移行させ、この接合面に接合相手であ
るチップ部品もしくは回路基板の接合面を合わせた後、
接着剤層を硬化させることを特徴とするチップ部品の接
合方法。1. A method for joining chip components to each other or a chip component and a circuit board by using an adhesive, wherein the method uses a film adhesive composed of a reinforcing material and an adhesive layer as the adhesive. While cutting the film adhesive, stamping it, or pressing it as it is against the bonding surface of the chip component or circuit board, the adhesive layer is softened but heated to a temperature at which it does not harden After moving to the surface and aligning the joint surface of the chip component or circuit board that is the joint partner with this joint surface,
A method for joining chip components, which comprises curing an adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564193A JP3350144B2 (en) | 1993-05-18 | 1993-05-18 | How to join chip components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11564193A JP3350144B2 (en) | 1993-05-18 | 1993-05-18 | How to join chip components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06334315A true JPH06334315A (en) | 1994-12-02 |
| JP3350144B2 JP3350144B2 (en) | 2002-11-25 |
Family
ID=14667673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11564193A Expired - Fee Related JP3350144B2 (en) | 1993-05-18 | 1993-05-18 | How to join chip components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3350144B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012049267A (en) * | 2010-08-25 | 2012-03-08 | Tokyo Electron Ltd | Joint system, joint method, program and computer-storable medium |
-
1993
- 1993-05-18 JP JP11564193A patent/JP3350144B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012049267A (en) * | 2010-08-25 | 2012-03-08 | Tokyo Electron Ltd | Joint system, joint method, program and computer-storable medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3350144B2 (en) | 2002-11-25 |
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