JPH0634411B2 - Superconducting device - Google Patents
Superconducting deviceInfo
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- JPH0634411B2 JPH0634411B2 JP62055408A JP5540887A JPH0634411B2 JP H0634411 B2 JPH0634411 B2 JP H0634411B2 JP 62055408 A JP62055408 A JP 62055408A JP 5540887 A JP5540887 A JP 5540887A JP H0634411 B2 JPH0634411 B2 JP H0634411B2
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- film
- superconducting
- tan
- upper electrode
- wiring
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は超電導装置に係り、特に液体ヘリウム温度近傍
で動作し、高速で低消費電力性能を有する信頼性の高い
超電導装置に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting device, and more particularly to a highly reliable superconducting device that operates near liquid helium temperature and has high speed and low power consumption performance.
従来、超電導装置（以下、文中では、超電導スイッチン
グ装置と称する場合もある）において、磁気遮蔽膜，ト
ンネル接合素子の電極膜、および配線膜等の超電導膜に
はＮｂ膜が用いられて来た。Ｎｂ膜を超電導膜に用いた
超電導スイッチング装置の作製方法および構造に関して
は、アイ・イー・イー・イー，トランザクション オン
マグネティクス，エム エー ジー １９，（１９８
３年）第１１７０頁から１１７３頁（ＩＥＥＥ Ｔran
s.Ｍagnetics，ＭＡＧ１９，（１９８３）＝ｐｐ．１１
７０−１１７３）において詳細に述べられている。Ｎｂ
膜は室温と液体ヘリウム温度間の熱サイクルに対して充
分な機械的強度を有し、熱的応力によるトンネル接合素
子の劣化をもたらさない。したがってＮｂは耐久性のあ
る超電導スイッチング装置を得るために必須の超電導材
料である。Conventionally, in a superconducting device (hereinafter, also referred to as a superconducting switching device in some cases), a Nb film has been used as a magnetic shielding film, an electrode film of a tunnel junction element, and a superconducting film such as a wiring film. Regarding the fabrication method and structure of the superconducting switching device using the Nb film as the superconducting film, IEE, Transaction on Magnetics, MAG 19, (198).
3 years) pp. 1170 to 1173 (IEEE Tran
s. Magnetics, MAG19, (1983) = pp. 11
70-1173). Nb
The film has sufficient mechanical strength for thermal cycling between room temperature and liquid helium temperature, and does not cause deterioration of the tunnel junction device due to thermal stress. Therefore, Nb is an essential superconducting material for obtaining a durable superconducting switching device.
前記従来の技術の項で述べたごとく、Ｎｂを用いた超電
導スイッチング装置は高い機械的な耐久性能を有する。
しかるにＮｂは酸素に対する反応性が強い。Ｎｂの酸素
に対する反応性は結晶粒径の粗大なバルクＮｂにおける
よりも、超電導スイッチング装置に用いるＮｂ薄膜にお
いてむしろ著しい。酸素雰囲気中でＮｂ薄膜を加熱した
場合、３００℃程度以上の加熱温度に対してＮｂ膜の超
電導特性が劣化する。As described in the section of the prior art, the superconducting switching device using Nb has high mechanical durability.
However, Nb has a strong reactivity with oxygen. The reactivity of Nb with oxygen is more remarkable in the Nb thin film used in the superconducting switching device than in bulk Nb having a coarse crystal grain size. When the Nb thin film is heated in an oxygen atmosphere, the superconducting property of the Nb film deteriorates at a heating temperature of about 300 ° C. or higher.
このようなＮｂ膜の酸素に対する反応性は超電導スイッ
チング装置に用いるトンネル接合素子において著しい。
Ｎｂ膜で構成されるトンネル接合の場合、２００℃まで
の加熱によって、ジョセフソン臨界電流の変化，リーク
電流の増大，トンネル抵抗の変化等を生じる。これらの
接合特性の変化は、Ｎｂ膜中への酸素の拡散によって引
き起されるものである。一方、実用的な耐久性を考慮し
た場合、さらにジョセフソン接合形成後の作製工程にお
いて２００℃以上の処理が必要な場合もあり得る。The reactivity of the Nb film with respect to oxygen is remarkable in the tunnel junction element used in the superconducting switching device.
In the case of a tunnel junction composed of an Nb film, heating to 200 ° C. causes a change in Josephson critical current, an increase in leak current, a change in tunnel resistance, and the like. These changes in the junction characteristics are caused by the diffusion of oxygen into the Nb film. On the other hand, in consideration of practical durability, it may be necessary to further perform treatment at 200 ° C. or higher in the manufacturing process after forming the Josephson junction.
そこで本発明の目的は、超電導スイッチング装置の磁気
遮蔽膜，電極膜あるいは配線膜等の超電導膜にＮｂある
いはＮｂ系材料を用いるに際して、ＮｂあるいはＮｂ系
材料の耐熱性能を向上せしめるための超電導装置を提供
することにある。Therefore, an object of the present invention is to provide a superconducting device for improving the heat resistance of Nb or Nb-based material when Nb or Nb-based material is used for the magnetic shielding film, the electrode film, the wiring film or the like of the superconducting switching device. To provide.
上記目的は超電導装置において、Ｎｂ磁気遮蔽膜，Ｎｂ
電極膜あるいはＮｂ配線膜等の表面層をＮｂＮ，Ｍｏ
Ｎ，ＺｒＮ，ＴａＮ等の窒化物あるいはＮｂＣ，Ｔａ
Ｃ，ＭｏＣ等の炭化物で覆った構造とすることにより達
成される。これら窒化物あるいは炭化物の膜厚として、
Ｎｂ膜を完全に覆いつくし、かつ後処理における膜厚減
少後においても被覆性を有するために１０ｎｍ以上の膜
厚が必要である。The above object is to provide a Nb magnetic shield film, Nb
The surface layer such as the electrode film or the Nb wiring film is coated with NbN, Mo.
N, ZrN, TaN, etc. nitrides or NbC, Ta
This is achieved by having a structure covered with a carbide such as C or MoC. As the film thickness of these nitrides or carbides,
It is necessary to have a film thickness of 10 nm or more in order to completely cover the Nb film and to have the covering property even after the film thickness is reduced in the post-treatment.
ＮｂＮ，ＭｏＮ，ＺｒＮ，ＴａＮ等の窒化物あるいは、
ＮｂＣ，ＴａＣ，ＭｏＣ等の炭化物はいずれも１０Ｋ以
上の超電導臨界温度を有し、Ｎｂ膜の臨界温度９．２Ｋ
より充分高い。さらに、これら窒化物、あるいは炭化物
においてはＮｂ，Ｍｏ，Ｚｒ，Ｔａ等の金属元素に対し
て、窒素あるいは炭素原子が置換型で存在しているので
はなく、侵入型で存在している。したがって、酸素に対
する反応性はＮｂ膜より、これら窒化物あるいは炭化物
の方が充分に低い。たとえば約１ヶ月間の空気中放置に
対して、Ｎｂ膜は表面に厚さ約１０ｎｍの酸化層が形成
されるが、たとえばＮｂＮ膜の表面に形成される酸化層
の厚さは２ｎｍである。NbN, MoN, ZrN, TaN and other nitrides, or
Carbides such as NbC, TaC, and MoC all have a superconducting critical temperature of 10K or higher, and the Nb film has a critical temperature of 9.2K.
Higher enough. Further, in these nitrides or carbides, nitrogen or carbon atoms do not exist in substitutional type but in interstitial type with respect to metal elements such as Nb, Mo, Zr, and Ta. Therefore, the reactivity with respect to oxygen is sufficiently lower in these nitrides or carbides than in the Nb film. For example, when the Nb film is left in the air for about one month, an oxide layer having a thickness of about 10 nm is formed on the surface thereof, and the oxide layer formed on the surface of the NbN film has a thickness of 2 nm, for example.
Ｎｂ膜は大気中３００℃における加熱によって臨界温度
の低下を来たすが、たとえばＮｂＮ膜は全く変化を示さ
ない。このような酸素に対する反応度の低さはＮｂＮだ
けでなく、ＭｏＮ，ＺｒＮ，ＴａＮおよびＮｂＣ，Ｔａ
Ｃ，ＭｏＣ等に共通の性質である。The Nb film lowers the critical temperature by heating at 300 ° C. in the atmosphere, but the NbN film, for example, shows no change at all. Not only NbN but also MoN, ZrN, TaN and NbC, Ta have low reactivity to oxygen.
It is a property common to C, MoC and the like.
以下、本発明の一実施例を以下に述べる。（１００）面
が表面と平行なＳｉウエハ１上に熱酸化を施し、厚さ５
００ｎｍの表面酸化層を形成した。つぎに、Ａｒガス雰
囲気中での直流スパッタ法により、厚さ２００ｎｍのＮ
ｂ膜を形成した。つぎに同一装置中で、Ａｒと窒素の混
合ガス雰囲気中での直流スパッタ法により、厚さ３０ｎ
ｍのＴａＮ膜を形成した。所定のパタン形状を有するレ
ジスト層形成後、ＣＦ４と酸素の混合ガスを用いた反応
性イオンエッチング法により、前記のＴａＮ膜とＮｂ膜
の２層膜の加工を行い、レジストを除去することにより
Ｎｂ磁気遮蔽膜２およびＴａＮ磁気遮蔽膜保護層３とし
た。つぎに抵抗加熱法により、ＳｉＯ膜を２００ｎｍの
厚さでウエハ全面に形成した。所定のコンタクト穴を持
ったパタン形状を有するレジスト層形成後、ＣＨＦ３ガ
スを用いた反応性イオンエッチング法により、ＳｉＯ膜
の加工を行い、レジストを除去してＳｉＯ層間絶縁膜４
とした。An embodiment of the present invention will be described below. A silicon wafer 1 having a (100) plane parallel to the surface is thermally oxidized to a thickness of 5
A surface oxide layer of 00 nm was formed. Next, by a DC sputtering method in an Ar gas atmosphere, a 200 nm-thick N
The b film was formed. Next, in the same apparatus, a thickness of 30 n was obtained by a DC sputtering method in a mixed gas atmosphere of Ar and nitrogen.
m TaN film was formed. After forming a resist layer having a predetermined pattern shape, the above-mentioned two-layer film of TaN film and Nb film is processed by a reactive ion etching method using a mixed gas of CF 4 and oxygen, and the resist is removed. The Nb magnetic shield film 2 and the TaN magnetic shield film protective layer 3 were used. Next, a SiO film having a thickness of 200 nm was formed on the entire surface of the wafer by a resistance heating method. After forming a resist layer having a pattern shape having a predetermined contact hole, the SiO film is processed by the reactive ion etching method using CHF 3 gas, and the resist is removed to remove the SiO 2 interlayer insulating film 4.
And
つぎにスイッチングを行うトンネル接合素子としての超
電導トンネル接合の作製を行った。すなわち、Ｎｂ下部
電極膜５の直流スパッタ法による形成、トンネル障壁層
となるＡｌ膜の直流スパッタによる形成と酸化によるＡ
ｌ酸化物障壁層６の形成、Ｎｂ上部電極膜７の直流スパ
ッタによる形成、さらにはＮｂ上部電極膜７の保護層と
なる膜厚３０ｎｍのＴａＮ上部電極保護膜８の直流スパ
ッタによる形成を連続的に行った。つぎにＣＦ４と酸素
の混合ガスを用いた反応性イオンエッチングにより上部
電極と下部電極のＮｂ膜およびＴａＮ膜を、Ａｒガスを
用いたイオンビームエッチングによりトンネル障壁層の
加工を行い、接合部を含む配線膜パタンを得た。つぎに
接合部を規定するためのレジストパタンを形成した。こ
のレジストパタンに従ってＣＦ４ガスを用いた反応性イ
オンエッチングにより、上部電極となるＮｂ膜およびそ
の保護膜となるＴａＮ膜の加工を行った。Next, a superconducting tunnel junction was manufactured as a tunnel junction element for switching. That is, the Nb lower electrode film 5 is formed by the DC sputtering method, the Al film to be the tunnel barrier layer is formed by the DC sputtering, and the A film is formed by oxidation.
The formation of the oxide barrier layer 6, the formation of the Nb upper electrode film 7 by DC sputtering, and the formation of the TaN upper electrode protective film 8 having a film thickness of 30 nm to be the protective layer of the Nb upper electrode film 7 by DC sputtering are successively performed. Went to. Next, the Nb film and the TaN film of the upper electrode and the lower electrode are processed by reactive ion etching using a mixed gas of CF 4 and oxygen, and the tunnel barrier layer is processed by ion beam etching using Ar gas to form a junction. A wiring film pattern containing the same was obtained. Next, a resist pattern for defining the joint was formed. The Nb film to be the upper electrode and the TaN film to be its protective film were processed by reactive ion etching using CF 4 gas according to this resist pattern.
つぎにエッチングを行った部分のＳｉＯ層間絶縁膜９に
よる埋戻しを行い、Ａｒの高周波プラズマ雰囲気におけ
るクリーニング処理を経て、上部電極につながるＮｂ配
線膜１０およびその保護層となる膜厚２００ｎｍのＴａ
Ｎ配線保護膜１１を直流スパッタ法によりウエハ全面に
形成した。再びＣＦ４と酸素の混合ガスを用いた反応性
イオンエッチング法により、配線用パタンの加工形成を
行った。Then, the etched portion is backfilled with the SiO interlayer insulating film 9 and, after a cleaning process in Ar high-frequency plasma atmosphere, a Nb wiring film 10 connected to the upper electrode and a Ta film having a thickness of 200 nm to be a protective layer thereof are formed.
The N wiring protective film 11 was formed on the entire surface of the wafer by the DC sputtering method. The wiring pattern was processed and formed again by the reactive ion etching method using a mixed gas of CF 4 and oxygen.
つぎに、トンネル接合上に層間絶縁膜の形成を行った。
すなわち、リフトオフ用レジストパタンを形成後、Ｓｉ
Ｏ膜を蒸着してＳｉＯ層間絶縁膜１２とした。さらに制
御線用のＮｂ膜とＴａＮ層状膜を直流スパッタ法により
ウエハ全面に形成した。制御線用レジストパタン形成
後、ＣＦ４と酸素の混合ガスを用いた反応性イオンエッ
チング法により、Ｎｂ制御線膜１３とＴａＮ制御線保護
膜１４の加工を行った。制御線全体の厚さは８００ｎｍ
とし、ＴａＮ膜厚４００ｎｍ、およびＮｂ膜厚４００ｎ
ｍとした。Next, an interlayer insulating film was formed on the tunnel junction.
That is, after forming the lift-off resist pattern, Si
An O film was vapor deposited to form a SiO 2 interlayer insulating film 12. Further, an Nb film for control lines and a TaN layered film were formed on the entire surface of the wafer by a DC sputtering method. After the control line resist pattern was formed, the Nb control line film 13 and the TaN control line protective film 14 were processed by the reactive ion etching method using a mixed gas of CF 4 and oxygen. The total control line thickness is 800 nm
And TaN film thickness 400 nm and Nb film thickness 400 n
m.
これらの作製経過により、すべての超電導Ｎｂ膜の表面
層はＴａＮ超電導膜によって覆われていることになる。Due to these manufacturing processes, the surface layers of all the superconducting Nb films are covered with the TaN superconducting film.
以上のごとく形成された超電導スイッチング装置に対し
て加熱処理に対する耐久性能を調べた。超電導スイッチ
ング装置を大気中で１時間の加熱処理を行った。この結
果によれば、超電導膜部位の特性に関しては、３００℃
までの加熱に対して臨界温度あるいは臨界電流の低下を
来たさなかった。超電導トンネル接合の特性に関して
は、２５０℃までの加熱に対してトンネル抵抗，リーク
電流等の値に変化を来たさなかった。超電導配線膜間の
接続に関して、ＴａＮ層を付加することによる超電導電
流の減少は検出されなかった。The durability of the superconducting switching device formed as described above with respect to heat treatment was examined. The superconducting switching device was heat-treated in the atmosphere for 1 hour. According to this result, regarding the characteristics of the superconducting film part,
The heating did not cause the critical temperature or the critical current to drop. Regarding the characteristics of the superconducting tunnel junction, the values of tunnel resistance, leak current, etc. did not change with heating up to 250 ° C. Regarding the connection between the superconducting wiring films, the decrease in the superconducting current due to the addition of the TaN layer was not detected.
ＴａＮ膜以外の超電導性を示す窒化物あるいは炭化物、
すなわちＮｂＮ，ＭｏＮ，ＺｒＮ，ＮｂＣ，ＴａＣある
いはＭｏＣ等をＮｂ膜の保護層とした場合にも同様の超
電導スイッチング装置の耐久性能を向上させる効果があ
った。Nitride or carbide showing superconductivity other than TaN film,
That is, even when NbN, MoN, ZrN, NbC, TaC, or MoC was used as the protective layer of the Nb film, there was an effect of improving the durability performance of the same superconducting switching device.
〔発明の効果〕 以上の実施例において述べたごとく、超電導スイッチン
グ装置において本発明における超電導保護膜材料を用い
た場合、以下の効果を有した。[Effects of the Invention] As described in the above embodiments, when the superconducting protective film material of the present invention is used in the superconducting switching device, the following effects are obtained.
(1) Ｎｂ系超電導膜の加熱に対する超電導特性の安定
性が高められ、３００℃近傍における加熱が可能になっ
た。(1) The stability of the Nb-based superconducting film with respect to heating was improved, and heating at around 300 ° C became possible.
(2) Ｎｂ系超電導トンネル接合のトンネル抵抗，臨界
電流等トンネル特性の安定性が高められ、２５０℃近傍
における加熱が可能になった。(2) The stability of the tunnel characteristics such as the tunnel resistance and critical current of the Nb-based superconducting tunnel junction was improved, and heating at around 250 ° C became possible.
(3) 超電導保護膜材料の存在が超電導スイッチング装
置作製時におけるＮｂ系超電導膜表面の変質を防止する
ので、超電導配線層接続時におけるクリーニング処理が
容易となる。(3) The presence of the superconducting protective film material prevents alteration of the surface of the Nb-based superconducting film at the time of manufacturing the superconducting switching device, so that the cleaning process at the time of connecting the superconducting wiring layer becomes easy.
第１図は本発明の一実施例の超電導スイッチング装置の
断面図である。 １……Ｓｉウエハ、２……Ｎｂ磁気遮蔽膜、３……Ｔａ
Ｎ磁気遮蔽保護膜層、４……ＳｉＯ層間絶縁膜、５……
Ｎｂ下部電極膜、６……Ａｌ酸化物障壁層、７……Ｎｂ
上部電極膜、８……ＴａＮ上部電極保護膜、９……Ｓｉ
Ｏ層間絶縁膜、１０……Ｎｂ配線膜、１１……ＴａＮ配
線保護膜、１２……ＳｉＯ層間絶縁膜、１３……Ｎｂ制
御線膜、１４……ＴａＮ制御線保護膜。FIG. 1 is a sectional view of a superconducting switching device according to an embodiment of the present invention. 1 ... Si wafer, 2 ... Nb magnetic shield film, 3 ... Ta
N magnetic shielding protective film layer, 4 ... SiO interlayer insulating film, 5 ...
Nb lower electrode film, 6 ... Al oxide barrier layer, 7 ... Nb
Upper electrode film, 8 ... TaN upper electrode protective film, 9 ... Si
O interlayer insulating film, 10 ... Nb wiring film, 11 ... TaN wiring protective film, 12 ... SiO interlayer insulating film, 13 ... Nb control line film, 14 ... TaN control line protective film.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−78585（ＪＰ，Ａ) ＩＥＥＥ ＴＲＡＮＳＡＣＴＩＯＮ Ｏ Ｎ ＭＡＧＮＥＴＩＣＳ， ＶＯＬ．ＭＡ Ｇ−21，ＮＯ．２，（ＭＡＲＣＨ 1985），ＰＰ．110−117 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-78585 (JP, A) IEEE TRANSACTION ON MAGNETICS, VOL. MAG-21, NO. 2, (MARCH 1985), PP. 110-117
Claims (1)
面層は、ＮｂＮ、ＭｏＮ、ＺｒＮ、ＴａＮ等の窒化物あ
るいはＮｂＣ、ＴａＣ、ＭｏＣ等の炭化物からなる保護
膜で覆った構造とすることを特徴とする超電導装置。1. A magnetic shield film formed on a wafer, an interlayer insulation formed on the magnetic shield film, a lower electrode formed on the interlayer insulation, a barrier layer formed on the lower electrode, An upper electrode formed on the barrier layer, a wiring film formed on the upper electrode, an interlayer insulating film formed on the wiring film, and a control line film formed on the interlayer insulating film, The surface layers of the magnetic shielding film, the upper electrode and the control line film are covered with a protective film made of a nitride such as NbN, MoN, ZrN and TaN or a carbide such as NbC, TaC and MoC. Characteristic superconducting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055408A JPH0634411B2 (en) | 1987-03-12 | 1987-03-12 | Superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055408A JPH0634411B2 (en) | 1987-03-12 | 1987-03-12 | Superconducting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63224274A JPS63224274A (en) | 1988-09-19 |
| JPH0634411B2 true JPH0634411B2 (en) | 1994-05-02 |
Family
ID=12997723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62055408A Expired - Lifetime JPH0634411B2 (en) | 1987-03-12 | 1987-03-12 | Superconducting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0634411B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3009146B2 (en) * | 1987-03-27 | 2000-02-14 | 株式会社日立製作所 | Semiconductor integrated circuit |
| JPH0271702A (en) * | 1988-09-07 | 1990-03-12 | Yamaha Corp | Fitting material for ski boots |
| EP0476651B1 (en) * | 1990-09-20 | 1996-03-20 | Fujitsu Limited | Josephson device having an overlayer structure with improved thermal stability |
| US20170279028A1 (en) * | 2016-03-22 | 2017-09-28 | Eastern Plus, LLC | Purposing and repurposing a group of compounds that can be used as high temperature superconductors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5978585A (en) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | Josephson integrated circuit |
-
1987
- 1987-03-12 JP JP62055408A patent/JPH0634411B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| ＩＥＥＥＴＲＡＮＳＡＣＴＩＯＮＯＮＭＡＧＮＥＴＩＣＳ，ＶＯＬ．ＭＡＧ−２１，ＮＯ．２，（ＭＡＲＣＨ１９８５），ＰＰ．１１０−１１７ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63224274A (en) | 1988-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |