JPH0636583Y2 - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JPH0636583Y2
JPH0636583Y2 JP1987104983U JP10498387U JPH0636583Y2 JP H0636583 Y2 JPH0636583 Y2 JP H0636583Y2 JP 1987104983 U JP1987104983 U JP 1987104983U JP 10498387 U JP10498387 U JP 10498387U JP H0636583 Y2 JPH0636583 Y2 JP H0636583Y2
Authority
JP
Japan
Prior art keywords
terminal
electrode
film
electrostatic chuck
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987104983U
Other languages
Japanese (ja)
Other versions
JPS6411542U (en
Inventor
忠志 宮村
繁夫 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP1987104983U priority Critical patent/JPH0636583Y2/en
Publication of JPS6411542U publication Critical patent/JPS6411542U/ja
Application granted granted Critical
Publication of JPH0636583Y2 publication Critical patent/JPH0636583Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は例えば半導体製造装置において、試料を保持す
る場合に用いる静電チャックに関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electrostatic chuck used for holding a sample in a semiconductor manufacturing apparatus, for example.

〔従来技術〕[Prior art]

静電吸着作用を利用した静電チャックとして、絶縁体で
ある円板状のセラミック(Al2O3)内部に導電体である
金属板電極を埋設したもの(以下、埋設型という)と、
導電体である金属円板電極表面に、絶縁体であるポリイ
ミドフィルムを接着剤で貼付せしめたもの(以下、被覆
型という)とが知られている。以下に前記2つの静電チ
ャックについて説明する。
As an electrostatic chuck using electrostatic attraction, a metal plate electrode that is a conductor is embedded inside a disk-shaped ceramic (Al 2 O 3 ) that is an insulator (hereinafter referred to as an embedded type),
It is known that a polyimide film, which is an insulator, is attached to the surface of a metal disk electrode, which is a conductor, with an adhesive (hereinafter referred to as a coating type). The two electrostatic chucks will be described below.

第3図は前記埋設型の概略縦断面図であり、円板状の絶
縁体32はその表面(上面)近傍にセラミック焼成時一体
にモールドされた金属板電極31を包含し、電極31はその
中央部裏面側において、円柱状をなして一端にねじ部33
aを有する端子33の他端が絶縁体32に嵌挿してろう付に
より接続しており、端子33のねじ部33aを有する端部は
静電力を誘起せしめるべく電圧を印加する図示しない電
源に接続される。
FIG. 3 is a schematic vertical cross-sectional view of the buried type. A disk-shaped insulator 32 includes a metal plate electrode 31 integrally molded in the vicinity of its surface (upper surface) during ceramic firing, and the electrode 31 is On the back side of the central part, the threaded part 33
The other end of the terminal 33 having a is inserted into the insulator 32 and connected by brazing, and the end of the terminal 33 having the screw portion 33a is connected to a power source (not shown) that applies a voltage to induce an electrostatic force. To be done.

端子33の絶縁体32の裏面直下部分からねじ部33aの略中
央部までに亘る周囲に、下端にフランジ部34aを設けた
絶縁筒34が嵌合されている。絶縁筒34のフランジ部34a
より上部の周囲と絶縁体32の略下半分の周囲とを、水を
通流して冷却せしめるために内部に通流孔35aを設けた
水冷ジャケット35が外嵌されている。絶縁筒34と水冷ジ
ャケット35は、端子33のねじ部33aにナット36を螺合し
その締付によって絶縁体32に密接保持される。
An insulating cylinder 34 having a flange portion 34a at its lower end is fitted around the periphery of the terminal 33 immediately below the back surface of the insulator 32 to the substantially central portion of the screw portion 33a. Flange portion 34a of the insulating tube 34
A water cooling jacket 35 having a through hole 35a therein is fitted on the outer periphery of the upper part and the periphery of the lower half of the insulator 32 to allow water to flow therethrough for cooling. The insulating cylinder 34 and the water cooling jacket 35 are tightly held by the insulator 32 by screwing a nut 36 onto the threaded portion 33a of the terminal 33 and tightening the nut 36.

一方、第4図は前記被覆型の概略縦断面図であり、金属
円板電極41の表面(上面)には絶縁膜として膜厚略50μ
mのポリイミドフィルム40が接着剤で貼付され、電極41
の略下半分の表面にはフィルム状絶縁膜42が被覆されて
いる。電極41はその中央部裏面側において、円柱状をな
して一端にねじ部43aを有する端子43の他端に絶縁膜42
に挿嵌して接続しており、端子43のねじ部43aを有する
端部は静電力を誘起せしめるべく電圧を印加する図示し
ない電源に接続される。その他の装置に関しては前記埋
設型と同様であるため第3図と同一符号を付し、説明は
省略する。
On the other hand, FIG. 4 is a schematic vertical sectional view of the above-mentioned coating type, in which a film thickness of about 50 μm is formed as an insulating film on the surface (upper surface) of the metal disc electrode 41.
Polyimide film 40 of m is attached with an adhesive, and electrode 41
A film-like insulating film 42 is coated on the surface of the lower half of the film. The electrode 41 has a columnar shape on the back surface side of the central portion thereof and has an insulating film 42 at the other end of the terminal 43 having a threaded portion 43a at one end.
The end portion of the terminal 43 having the threaded portion 43a is connected to a power source (not shown) that applies a voltage to induce an electrostatic force. Other devices are the same as those of the buried type, so the same reference numerals as in FIG.

〔考案が解決しようとする問題点〕[Problems to be solved by the invention]

上述した如き従来の埋設型においては、セラミック絶縁
体32の内部に異材質の金属電極31を入れるという構造の
ため、セラミック焼成時にセラミックと金属両者間の膨
張係数の差による焼成割れが発生し、歩留りの低下をも
たらし、また静電吸着するセラミックの表面(以下、吸
着面という)の平面度、表面粗さを確保することが難し
く、また吸着力を増大するためにセラミック焼成後に吸
着面研削処理を行なうが、吸着面から電極までの厚さを
所望の値にすることが難しい。また端子33と電極31のろ
う付時の加熱の際にセラミック割れが生じ、ろう付不完
全による端子と電極との接触不良が発生するという問題
があった。
In the conventional buried type as described above, because of the structure in which the metal electrode 31 of a different material is placed inside the ceramic insulator 32, firing cracking occurs due to the difference in expansion coefficient between the ceramic and the metal during firing of the ceramic, It is difficult to secure the flatness and surface roughness of the surface of ceramics (hereinafter referred to as the adsorption surface) that causes a decrease in yield and electrostatically adsorbs. Also, in order to increase the adsorption force, the adsorption surface is ground after the ceramics are fired. However, it is difficult to set the thickness from the adsorption surface to the electrode to a desired value. In addition, there is a problem that ceramic cracks occur during heating of the terminal 33 and the electrode 31 during brazing, resulting in poor contact between the terminal and the electrode due to imperfect brazing.

一方、被覆型においては、金属円板電極41にポリイミド
フィルム40を接着剤で貼付するという構造のため前記埋
設型よりも製作工数は低減されるが、ポリイミドフィル
ムの接着時にフィルム表面が平坦化せず、ポリイミドフ
ィルム上に静電吸着する吸着物とポリイミドフィルム
(以下、埋設型と同じく吸着面という)との間に隙間が
生じ、吸着力が低い。またポリイミドの耐熱温度上限値
が200℃前後であるため高温条件下での静電吸着が難し
く、またポリイミドフィルムの寿命が短いという問題が
あった。
On the other hand, in the coating type, the number of manufacturing steps is reduced as compared with the embedded type due to the structure in which the polyimide film 40 is attached to the metal disk electrode 41 with an adhesive, but the film surface is flattened when the polyimide film is bonded. However, a gap is formed between the adsorbate that is electrostatically adsorbed on the polyimide film and the polyimide film (hereinafter, also referred to as an adsorbing surface like the embedded type), and the adsorbing power is low. Moreover, since the upper limit of the heat resistant temperature of polyimide is around 200 ° C., electrostatic adsorption under high temperature conditions is difficult, and the life of the polyimide film is short.

本考案は斯かる事情に鑑みてなされたものであり、その
目的とするところは製作工数を低減し、また吸着力,絶
縁性を高くすると共に吸着面の耐熱性および耐久性を向
上せしめ、端子と電極との間の接触を強固にした静電チ
ャックを提供することにある。
The present invention has been made in view of such circumstances, and its purpose is to reduce the number of manufacturing steps, improve the suction force and the insulating property, and improve the heat resistance and durability of the suction surface. An object is to provide an electrostatic chuck in which the contact between the electrode and the electrode is strong.

〔問題点を解決するための手段〕[Means for solving problems]

本考案に係る静電チャックは、導電体上に絶縁膜を被覆
し、被吸着物と前記導電体との間に直流電圧を印加し、
前記絶縁膜上に被吸着物を吸着すべくなした静電チャッ
クにおいて、前記導電体表面のうち直流電圧を印加する
端子との接続部を除く全面を被覆する、セラミック溶射
にて形成された膜厚100〜500μmの絶縁膜を具備するこ
とを特徴とする。
In the electrostatic chuck according to the present invention, a conductor is coated with an insulating film, and a DC voltage is applied between an object to be attracted and the conductor,
In an electrostatic chuck for adsorbing an object to be adsorbed on the insulating film, a film formed by ceramic spraying, which covers the entire surface of the conductor surface except the connection portion with a terminal to which a DC voltage is applied. It is characterized by comprising an insulating film having a thickness of 100 to 500 μm.

〔作用〕[Action]

本考案にあつてはこれによって、絶縁膜はセラミック溶
射にて形成され、しかも導電体と端子との接続部を除く
導電体の全面を覆うから継ぎ目がなく、プラズマ中での
使用,或いは直流電圧に加え高周波電圧を印加する場合
においてもリーク電流が極めて少なくて済み、また導電
体と端子との接続部外周面に溶射にて一体的に付着形成
することも可能で、接続部自体が強化され、更にマスキ
ングの必要がないから工程数の大幅な低減も可能とな
る。
According to the present invention, the insulating film is formed by ceramic spraying, and since it covers the entire surface of the conductor except the connecting portion between the conductor and the terminal, it is seamless and can be used in plasma or DC voltage. In addition, the leakage current is extremely small even when a high-frequency voltage is applied, and it is also possible to integrally attach it to the outer peripheral surface of the connection part between the conductor and the terminal by thermal spraying, which strengthens the connection part itself. Moreover, since there is no need for masking, the number of steps can be greatly reduced.

絶縁膜の膜厚を100〜500μmとしたことは次の理由によ
る。即ち500μmを越えると吸着力の面で不足すること
がある。また100μmを下回ると絶縁性、耐熱性及び耐
久性の点で不足することがあるからである。
The reason why the thickness of the insulating film is 100 to 500 μm is as follows. That is, if it exceeds 500 μm, the adsorption force may be insufficient. If it is less than 100 μm, it may be insufficient in terms of insulation, heat resistance and durability.

〔実施例〕〔Example〕

以下、本考案をその実施例を示す図面に基づき具体的に
説明する。第1図は本考案に係る静電チャック(以下、
本案装置という)の概略縦断面図であり、金属円板電極
1はその中央部裏面側において、円柱状をなして一端に
ねじ部3aを有する端子3の他端に接続し、前記電極1の
表面には電極1と端子3との接続部を除いて、絶縁膜と
してセラミック溶射膜2が全面に被覆されている。端子
3のねじ部3aを有する端部は静電力を誘起せしめるべく
電圧を印加する図示しない電源に接続される。端子3の
セラミック溶射膜2を被覆された電極1の裏面直下部分
からねじ部3aの略中央部までに亘る周囲に、下端にフラ
ンジ部4aを設けた絶縁筒4が嵌合されている。絶縁筒4
のフランジ4aより上部の周囲とセラミック溶射膜2で被
覆された電極1の略下半分の周囲とを、水を通流して冷
却せしめるために内部に通流孔5aを設けた水冷ジャケッ
ト5が外嵌されている。絶縁筒4と水冷ジャケット5
は、端子3のねじ部3aにナット6を螺合しその締付によ
ってセラミック溶射膜2で被覆された電極1に密接保持
される。セラミック溶射膜2の表面(上面)はその膜厚
を100μm〜500μmにせしめるべく研削処理を行なう。
このように膜厚を制御することによりセラミック溶射膜
2の平面度、表面粗さを確保し、静電吸着力を増すこと
ができる。
Hereinafter, the present invention will be specifically described with reference to the drawings showing an embodiment thereof. FIG. 1 shows an electrostatic chuck (hereinafter,
FIG. 2 is a schematic vertical cross-sectional view of a device of the present invention), in which the metal disc electrode 1 is connected to the other end of a terminal 3 having a screw portion 3a at one end and having a columnar shape on the back surface side of the central portion thereof. The surface is covered with a ceramic sprayed film 2 as an insulating film, except for the connection between the electrode 1 and the terminal 3. The end of the terminal 3 having the threaded portion 3a is connected to a power source (not shown) that applies a voltage to induce an electrostatic force. An insulating cylinder 4 having a flange 4a at its lower end is fitted around the periphery of the terminal 3 immediately below the back surface of the electrode 1 covered with the ceramic spray-coated film 2 to the substantial center of the screw 3a. Insulation cylinder 4
The water-cooling jacket 5 having a through-hole 5a inside for cooling water by passing water around the upper portion of the flange 4a of the electrode 4 and around the lower half of the electrode 1 covered with the ceramic sprayed film 2 is external. It is fitted. Insulation cylinder 4 and water cooling jacket 5
Is tightly held on the electrode 1 covered with the ceramic sprayed film 2 by screwing the nut 6 onto the threaded portion 3a of the terminal 3 and tightening the nut 6. The surface (upper surface) of the ceramic sprayed film 2 is subjected to a grinding treatment so as to have a film thickness of 100 μm to 500 μm.
By controlling the film thickness in this way, it is possible to secure the flatness and surface roughness of the ceramic sprayed film 2 and increase the electrostatic attraction force.

第2図は本案装置を用いて静電吸着処理を行なった場合
の電界強度と誘起される静電力との関係を示すグラフで
あり、横軸に電界強度(kV/μm)を対数目盛にてと
り、縦軸に静電力を同じく対数目盛にてとり、吸着面に
吸着せしめようとする試料の比誘電率εが2,4,6のそ
れぞれの場合の電界強度と静電力との関係を示してい
る。
FIG. 2 is a graph showing the relationship between the electric field strength and the induced electrostatic force when the electrostatic adsorption treatment is performed using the device of the present invention. The electric field strength (kV / μm) is plotted on the horizontal axis on a logarithmic scale. Similarly, the electrostatic force is plotted on the logarithmic scale on the vertical axis, and the relationship between the electric field strength and the electrostatic force is shown when the relative permittivity ε s of the sample to be adsorbed on the adsorption surface is 2, 4 or 6, Shows.

〔効果〕〔effect〕

以上の如く本考案に係る静電チャックにあっては、絶縁
膜はセラミック溶射によって、しかも導電体と端子との
接続部を除く導電体の全面にわたって形成され、絶縁膜
に継ぎ目がないからリーク電流が極めて少なく、また場
合により導電体と端子との接続部の外周面にも溶射が施
されているから接続部が強化され、更に絶縁膜の形成に
際しマスキング等を施す必要がないから製造工程数が低
減出来る。そして膜厚を100〜500μmとしたことにより
高い吸着力が確保できる反面、絶縁性、耐熱性、耐久性
の面でも所期の性能が得られる。従ってリーク電流が少
ないことと相俟ってプラズマ中での使用、又は直流電圧
に高周波電圧が重畳する電圧を印加する用途にも適した
静電チャックが実現できる。
As described above, in the electrostatic chuck according to the present invention, the insulating film is formed by ceramic spraying and over the entire surface of the conductor except the connecting portion between the conductor and the terminal, and since the insulating film is seamless, there is no leakage current. Is extremely small, and in some cases the outer peripheral surface of the connection between the conductor and the terminal is also sprayed, so the connection is reinforced, and there is no need to perform masking when forming the insulating film. Can be reduced. While the film thickness of 100 to 500 μm ensures a high adsorption force, the desired performance can be obtained in terms of insulation, heat resistance and durability. Therefore, in combination with the small leak current, an electrostatic chuck suitable for use in plasma or for application of a voltage in which a high frequency voltage is superimposed on a DC voltage can be realized.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案に係る静電チャックの構造を示す概略縦
断面図、第2図は本考案に係る静電チャックを用いて、
静電吸着処理時の電界強度と誘起される静電力との関係
を示すグラフ、第3図は従来の埋設型静電チャックの構
造を示す概略縦断面図、第4図は同じく従来の被覆型静
電チャックの構造を示す概略縦断面図である。 1……電極、2……セラミック溶射膜、3……端子
FIG. 1 is a schematic vertical sectional view showing the structure of an electrostatic chuck according to the present invention, and FIG.
FIG. 3 is a graph showing the relationship between the electric field strength and the electrostatic force induced during the electrostatic adsorption process, FIG. 3 is a schematic vertical sectional view showing the structure of a conventional embedded electrostatic chuck, and FIG. 4 is the same conventional coated type. It is a schematic longitudinal cross-sectional view which shows the structure of an electrostatic chuck. 1 ... Electrode, 2 ... Ceramic sprayed film, 3 ... Terminal

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】導電体上に絶縁膜を被覆し、被吸着物と前
記導電体との間に直流電圧を印加し、前記絶縁膜上に被
吸着物を吸着すべくなした静電チャックにおいて、前記
導電体表面のうち直流電圧を印加する端子との接続部を
除く全面を被覆する、セラミック溶射にて形成された膜
厚100〜500μmの絶縁膜を具備することを特徴とする静
電チャック。
1. An electrostatic chuck in which a conductor is coated with an insulating film, a DC voltage is applied between the object to be attracted and the conductor, and the object is attracted to the insulating film. An electrostatic chuck comprising an insulating film having a film thickness of 100 to 500 μm formed by ceramic spraying, which covers the entire surface of the conductor surface excluding a connection portion with a terminal for applying a DC voltage. .
JP1987104983U 1987-07-07 1987-07-07 Electrostatic chuck Expired - Lifetime JPH0636583Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987104983U JPH0636583Y2 (en) 1987-07-07 1987-07-07 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987104983U JPH0636583Y2 (en) 1987-07-07 1987-07-07 Electrostatic chuck

Publications (2)

Publication Number Publication Date
JPS6411542U JPS6411542U (en) 1989-01-20
JPH0636583Y2 true JPH0636583Y2 (en) 1994-09-21

Family

ID=31337190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987104983U Expired - Lifetime JPH0636583Y2 (en) 1987-07-07 1987-07-07 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPH0636583Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7060771B1 (en) * 2021-02-04 2022-04-26 日本碍子株式会社 Parts for semiconductor manufacturing equipment
WO2022168368A1 (en) * 2021-02-04 2022-08-11 日本碍子株式会社 Semiconductor manufacturing device member and method for manufacturing same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2960566B2 (en) * 1991-03-29 1999-10-06 信越化学工業株式会社 Electrostatic chuck substrate and electrostatic chuck
JP5281480B2 (en) * 2009-05-22 2013-09-04 新光電気工業株式会社 Electrostatic chuck

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727961B2 (en) * 1986-06-05 1995-03-29 東陶機器株式会社 Method of manufacturing electrostatic chuck plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7060771B1 (en) * 2021-02-04 2022-04-26 日本碍子株式会社 Parts for semiconductor manufacturing equipment
WO2022168368A1 (en) * 2021-02-04 2022-08-11 日本碍子株式会社 Semiconductor manufacturing device member and method for manufacturing same
US12243729B2 (en) 2021-02-04 2025-03-04 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6411542U (en) 1989-01-20

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